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Method for producing higher silanes

A technology of silicon compound and general formula, applied in the device for implementing the method, in the field of preparing silicon halide compound and preparing corresponding germanium compound, can solve the problems of impure crude product and the like

Active Publication Date: 2008-11-05
EVONIK OPERATIONS GMBH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] Common to most of the described processes is that the reaction is carried out at high temperature and significant energy consumption, requires the use of hydrogen as reducing agent or leads to very impure crude products with a large number of by-products

Method used

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  • Method for producing higher silanes

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Embodiment 1

[0059] enriched with methyltrichlorosilane (MeSiCl) in which silicon tetrachloride is preferably present in excess 3 ) of silicon tetrachloride (SiCl 4 ) is continuously evaporated and introduced into the non-thermal plasma in the gas discharge section of the quartz glass reactor. The gas phase was passed through the reactor at a rate of about 250 ml / h. An AC voltage with a frequency of 1.9 kHz and an amplitude of 35 kV "peak-to-peak" was applied while the gas phase was flowing through the reactor. The power input into the reactor was about 40W. Adjust the working pressure to about 300mbar. After passing through the reactor, the liquid reaction mixture is collected in a collection vessel. The gas chromatogram of the reaction mixture gave only one signal for the higher molecular weight silicon compound and could be attributed to hexachlorodisilane. The distillation was carried out discontinuously in a distillation apparatus equipped with a 50 cm column with Sulzer metal la...

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Abstract

The invention relates to a method for producing dimeric and / or trimeric silicon compounds, in particular silicon halogen compounds. The claimed method is also suitable for producing corresponding germanium compounds. The invention also relates to a device for carrying out said method to the use of the produced silicon compounds.

Description

technical field [0001] The present invention relates to a process for the preparation of dimeric and / or trimeric silicon compounds, in particular silicon halide compounds. In addition, the method of the present invention is also suitable for preparing corresponding germanium compounds. Furthermore, the invention relates to a device for carrying out the method and the use of the silicon compound obtained. Background technique [0002] Used in the microelectronics industry, such as the use of epitaxy to prepare high-purity silicon or to prepare silicon nitride (SiN), silicon oxide (SiO), silicon oxynitride (SiON), silicon oxycarbide (SiOC) or silicon carbide (SiC) Silicon compounds, which must meet extremely high requirements with regard to their purity. This is especially required when preparing thin layers of these materials. In the above application fields, the impurity of the initial compound will interfere in the range of ppb to ppt. For example, hexachlorodisilane in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07F7/02C07F7/30C23C16/42C30B29/10
CPCC01G17/00C01B33/36C01B21/068C01B31/301C01B33/12C01B33/04C01B33/107C01B21/0823C01P2002/86C07F7/30C07F7/083C01B32/907C01G17/04H05H1/00B01J19/088B01J2219/0803B01J2219/0894
Inventor J·E·朗H·劳勒德E·米
Owner EVONIK OPERATIONS GMBH
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