116 results about "Germanium compounds" patented technology

Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.

Techniques for forming shallow junctions are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for forming shallow junctions. The method may comprise generating an ion beam comprising molecular ions based on one or more materials selected from a group consisting of: digermane (Ge2H6), germanium nitride (Ge3N4), germanium-fluorine compounds (GFn, wherein n=1, 2, or 3), and other germanium-containing compounds. The method may also comprise causing the ion beam to impact a semiconductor wafer.

A germanium (Ge) compound is provided. The Ge compound has a chemical formula GeR1xR2y. “R1” is an alkyl group, and “R2” is one of hydrogen, amino group, allyl group and vinyl group. “x” is greater than zero and less than 4, and the sum of “x” and “y” is equal to 4. Methods of forming the Ge compound, methods of fabricating a phase change memory device using the Ge compound, and phase change memory devices fabricated using the Ge compound are also provided.

A method of fluorinating a halogenated organic substance comprising the steps of: introducing a germanium fluoride compound to a halogenated organic substance at a temperature between 250 and 320° C. to increase the fluorine content of the halogenated organic substance, thereby forming a fluorinated organic substance and a halogenated germanium compound, and separating the fluorinated organic substance and the halogenated germanium compound.

A method for producing a microelectronic device having one or more Si1−zGez based semiconductor wire(s) (with 0<z≦1), including:a) thermal oxidation of at least a portion of a Si1−xGex-based semiconductor layer (with 0<x<1) resting on a support, so as to form at least one Si1−yGey-based semiconductor zone (with 0<y<1 and x<y),b) lateral thermal oxidation of the sides of one or more so-called semiconductor connection blocks from the Si1−yGey-based semiconductor zone and connecting a semiconductor block intended to form a transistor source region and another block intended to form a transistor drain region so as to reduce the semiconductor connection blocks in at least one direction parallel to the main plane of the support and to form one or more Si1−zGez-based semiconductor wire(s) (with 0<y<1 and y<z).

A polymerization catalyst for polyester production which contains neither a germanium compound nor an antimony compound as a major component. It contains aluminum as the main metallic ingredient, has excellent catalytic activity, and gives a polyester which is effectively inhibited from suffering thermal degradation, during melt molding, without deactivating or removing the catalyst, and is excellent in thermal stability, stability to thermal oxidation, and hydrolytic resistance. The polymerization catalyst contains as a first metallic ingredient at least one member selected among aluminum and compounds thereof and further contains a phosphorus compound represented by a specific chemical formula. The polyester produced with this catalyst is usable as fibers, films, sheets, various moldings including hollow moldings, etc.

The method for producing a substrate comprising a silicon and germanium compound of Si1-XfGeXf type on insulator, with Xf comprised between a first value that is not zero and 1, comprises formation of a layer of silicon and germanium of Si1-XiGeXi type, with Xi strictly comprised between 0 and Xf, on a silicon on insulator substrate. The method then comprises a first step of thermal oxidation of the silicon of said layer at a predetermined first oxidation temperature to obtain said Si1-XfGeXf compound by condensation of the germanium. The first thermal oxidation step comprises at least one thermal treatment step under an inert gas at said predetermined first oxidation temperature. The method can for example comprise a second thermal oxidation step performed at a predetermined second oxidation temperature, different from the predetermined first oxidation temperature.

The present invention is the preparation process of pyridine and methyl pyridine and aims at providing production process superior to available technology, which has low selectivity and low yield of products pyridine and methyl pyridine. The technological scheme of the present invention adopts ammonia, formaldehyde and acetaldehyde under gas phase as material and molecular sieve modified with organic solution of silicon compound and / or germanium compound as catalyst. The present invention may be used in the industrial production of pyridine and methyl pyridine.

The present invention provides a chemical conversion solution and the surface treating method for realizing high corrosion resistance and high coating adhesion of the metal surface, as well as high throwing power during electrodeposition, and generating no sludge.A chemical conversion solution comprising (A) at least one compound selected from water-soluble germanium compound, water-soluble tin compound, and water-soluble copper compound, (B) at least one compound selected from water-soluble titanium compound and water-soluble zirconium compound, (C) at least one water-soluble nitrate compound, (D) at least one compound selected from water-soluble aluminum compound and water-soluble magnesium compound, (E) at least one water-soluble zinc compound, and (F) at least one fluorine compound, and, the coating process for the metal structure.

Germanium compounds suitable for use as vapor phase deposition precursors for germanium films are provided. Methods of depositing films containing germanium using such compounds are also provided. Such germanium films are particularly useful in the manufacture of electronic devices.

A biaxially oriented polyester film to be laminated on a metal plate and molded, which comprises an aromatic polyester composition comprising:(A) an aromatic polyester which comprises ethylene terephthalate as the main recurring unit and a titanium compound and a phosphorus compound both of which satisfy at least one of the following expressions (1) and (2):wherein Ti is the amount (mmol %) of elemental titanium of the titanium compound contained in this aromatic polyester and P is the amount (mmol %) of elemental phosphorus of the phosphorus compound contained in the aromatic polyester, and the following expression (3):wherein Ti is as defined hereinabove, and which contains alkali metal compounds, germanium compound and antimony compound in a total amount of not more than 3 ppm in terms of the total of elemental alkali metals, elemental germanium and elemental antimony; and(B) 0.05 to 5.0 wt % based on the aromatic polyester composition of inert fine particles having an average particle diameter of 2.5 mum or less.

The invention relates to an ionization-irradiation-resistant active optical fiber for space. The ionization-irradiation-resistant active optical fiber comprises an active fiber core, an inner cladding layer, an outer cladding layer and a coating layer; the materials of the active fiber core comprise active reactive ions and silicon dioxide of a co-doping agent, wherein the active reactive ions are one or more of halides or oxides of rare-earth elements of which the atomic number is from 57 to 71, and the co-doping agent is one or more of germanium compounds, phosphorus compounds, aluminum compounds and fluorine compounds; cerium compounds are doped in the material of the active fiber core and the dosage concentration of the cerium compounds is between 2,000 and 10,000ppm; and cerium or fluorine can be also doped in the material of the inner cladding layer, wherein the dosage concentration of cerium ions is between 0 and 8,000ppm, and the dosage concentration of fluorine ions is between 0 and 1,000ppm. In the invention, the ionization-irradiation-resistant characteristics of the active optical fiber can be greatly improved according to test verification because the cerium is doped in the fiber core of the ionization-irradiation-resistant active optical fiber, and the problem of application restriction of the current active optical fiber in an irradiation environment is solved.

The present invention relates to a PET resin and a process for producing polyethylene terephthalate (PET) resin having conventional catalysts such as antimony, titanium, tin or germanium compounds and a glycol insoluble tungsten compound or tungsten trioxide or tungsten carbide as co-catalyst. The tungsten compound as a co catalyst increases the rates of solid state polymerization and improves the ‘L’ color value.

The invention provides a negative electrode active material for a lithium-ion / sodium-ion secondary battery, a negative electrode and a battery, belonging to the technical field of electrochemistry and batteries. The negative electrode active material comprises a phosphorus-germanium compound, or / and a first complex formed by the phosphorus-germanium compound and elementary P or / and elementary Ge, or / and a second complex formed by the phosphorus-germanium compound and conductive components, or / and a third complex formed by the first complex and conductive components. The negative electrode provided by the invention comprises the negative electrode active material. The negative electrode has the advantages of high specific capacity, high initial Coulomb efficiency, small charge-discharge voltage platform difference and good high-current charge-discharge performance.

The present invention provides silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the compounds. The compounds are defined by formula: SiHnI (GeHn2)y, wherein y is 2, 3, or 4 wherein n1 is 0 1, 2 or 3 to satisfy valency and wherein n2 is independently 0, 1, 2 or 3 for each Ge atom in the compound, to satisfy valency.

A polymerization catalyst for polyester production which contains neither a germanium compound nor an antimony compound as a major component. It contains aluminum as the main metallic ingredient, has excellent catalytic activity, and gives a polyester which is effectively inhibited from suffering thermal degradation, during melt molding, without deactivating or removing the catalyst, and is excellent in thermal stability, stability to thermal oxidation, and hydrolytic resistance. The polymerization catalyst contains as a first metallic ingredient at least one member selected among aluminum and compounds thereof and further contains a phosphorus compound represented by a specific chemical formula. The polyester produced with this catalyst is usable as fibers, films, sheets, various moldings including hollow moldings, etc.

The present invention is germanium recovering method in metallurgical technology. Low-grade weak acid germanium material is first neutralized and converted via adding white coal powder, lime slurry, wood dust and water to regulate pH to 8-9, and stoved or wind dried to produce lumpy material; the lumpy material is roasted in furnace with coke and white coal to volatilize and reduce germanium compound; and the germanium containing smoke and dust is cooled in the flue and collected in smoke and dust collector to obtain the mixture with relatively high germanium content. The method of the present invention may be applied in recovering germanium from low-grade weak acid germanium material with germanium content below 0.5 %, and the collected smoke and dust has germanium content increased to 15-20 %.

The invention relates to a cultivation method for an organic tea plant containing nanometer germanium, and aims to provide the cultivation method for the organic tea plant containing nanometer germanium. The method can help the tea plant in absorbing nanometer germanium without using any pesticide or chemical synthesized fertilizer. The method comprises the following steps: tea seedling planting, soil management, fertilizer application management, pest control, and tea plant trimming. During the fertilizer application management, microorganism organic nanometer germanium mixed fertilizer is applied to the tea plant; the microorganism organic nanometer germanium mixed fertilizer is prepared by mixing organic nanometer germanium compound fertilizer and microorganism bacteria; and the microorganism bacteria comprise a photosynthesis bacterium, a nitrobacterium, a violet non-sulfur bacterium, a denitrifying bacterium and a green sulfur bacterium. The cultivation method can make the leaves of the tea plant stably contain abundant nanometer germanium. Each 100g of tea made from the leaves contains 40 to 65 micrograms of nanometer germanium; and the prepared tea completely meets the standards for organic tea by International Federation of Organic Agriculture Movements.

Techniques for forming shallow junctions are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for forming shallow junctions. The method may comprise generating an ion beam comprising molecular ions based on one or more materials selected from a group consisting of: digermane (Ge2H6), germanium nitride (Ge3N4), germanium-fluorine compounds (GFn, wherein n=1, 2, or 3), and other germanium-containing compounds. The method may also comprise causing the ion beam to impact a semiconductor wafer.

An aromatic polyester resin composition, including: a melt-kneaded product of 99-70 wt. parts of an aromatic polyester resin and 1-30 wt. parts (providing a total of 100 wt. parts together with the aromatic polyester resin) of a polyglycolic acid resin, wherein the aromatic polyester resin is an aromatic polyester resin polymerized with a germanium compound (catalyst), and the polyglycolic acid resin is a polyglycolic acid resin obtained by ring-opening polymerization of glycolide. As a result, gas generation during the melt-processing of a composition obtained by adding a relatively small amount of polyglycolic acid resin to an aromatic polyester resin is effectively suppressed to provide an aromatic polyester resin composition with a good gas-barrier property.

A method for producing germane gas from a germanium-containing solid. The germanium-containing solid may be an oxidic or non-oxidic form of germanium and may further include silicon, metals, or other elements in combination with germanium. The process includes oxidizing the germanium-containing solid phase starting material, where the oxidation may be effected by contacting the germanium-containing solid phase starting material with an oxidizing solution. The oxidizing solution may be a basic solution comprising a hydroxide or an acidic solution. The oxidation product of the germanium-containing solid phase starting material is converted to germane through an electrochemical or chemical reduction process.

The invention provides a polyester, which is produced by using a novel polyester polycondensation catalyst without the previous polycondensation catalyst such as an antimony compound, a germanium compound and the like as a main component, has sufficient degree of polymerization and thermal stability, and prevent the coagulation of inorganic particles, after the polyester is used for a polyester film, the obstruction of a filter is less, the smooth performance or traveling performance and the abrasion resistance are excellent, the quality reduction caused by the defect or foreign body on the film is less. The polyester composition is obtained by the polymerization in the presence of the polycondensation catalyst containing aluminium compound and lithium compound, wherein, the polyester composition contains 0.02 to 1.0 wt% of inertia inorganic particles with the average particle size of 0.5 to 3.0 mum, the amount of the coarse particles with the particle size of 10 mum is below 1000 / mm<2>.

A method of preparing an optical preform includes the steps of: a) etching an optical preform to remove a portion of an oxide material deposited on the preform by using a gas comprising an etchant gas containing fluorine at a sufficient temperature and gas concentration to create a redeposited germanium containing compounds contamination such as GeOx in the remaining oxide material; and b) cleaning the etched preform using a cleaning gas containing at least one halogen gas at a sufficient temperature and gas concentration to remove the redeposited germanium containing compound contamination without any substantial further contamination of the remaining deposited oxide material. Preferably the halogen is either chlorine or bromine.

A polymerization catalyst for polyester production which consists mainly of ingredients other than antimony compounds and germanium compounds, has excellent catalytic activity, and gives a polyester which, even without undergoing catalyst deactivation or removal, is effectively inhibited from thermally deteriorating during melt processing and has excellent thermal stability; a polyester obtained by using the catalyst; and a process for producing a polyester with the catalyst. The catalyst contains neither antimony nor germanium, has an activity parameter (AP) satisfying AP (min) < 2T (min), gives polyethylene terephthalate having an index of thermal stability (TD, %) satisfying TD<25, and comprises a metallic ingredient and an organic compound ingredient containing an Ar-O- and / or Ar-N< unit. The polyester is usable as, e.g., various molded articles such as a fiber, film, sheet, and hollow molding.

The present disclosure provides a new series of compounds exhibiting high fluorescence quantum yields in the solid state. In one embodiment, the compounds include a series of 2,3,4,5-tetraphenylgermoles with the same or different 1,1-substituents. In another embodiment, substituted germafluorenes, germa-fluoresceins / rhodamines, and germapins are described. These germanium heterocycles possess ideal photophysical and thermostability properties, which makes them excellent candidates for chemical or biological sensors, host materials for electroluminescent devices and solar cells, and emissive and / or electron-transport layer components in organic light emitting diode devices.

A liquid composition comprising a high-capacity aqueous carrier in which (i) a metalloid compound selected from the group consisting of antimony and germanium compounds and (ii) morpholine or derivative thereof are dissolved in the presence of (iii) unsaturated alcohol and (iv) water-soluble organic acid having reducing capacity, wherein the total concentration of said four components is preferably not less than 5% relative to the total weight of the composition. The composition is useful as a corrosion inhibitor. Also provided is a process for preparing the composition.

Highly ordered Ge films are prepared directly on single crystal Si substrates by applying an aqueous coating solution having Ge-bound polymer onto the substrate and then heating in a hydrogen-containing atmosphere. A coating solution was prepared by mixing water, a germanium compound, ethylenediaminetetraacetic acid, and polyethyleneimine to form a first aqueous solution and then subjecting the first aqueous solution to ultrafiltration.