17 results about "Germanium compounds" patented technology

The present invention relates to OLED materials and in particular to silicon and germanium compounds having specific aliphatic substituents for use in electronic devices, and to electronic devices, in particular organic light-emitting devices, containing these materials.

This application relates to a solid-state battery, a preparation method thereof, preparation equipment, and an electrical equipment. The solid-state battery of this application includes a positive electrode, a sulfide solid electrolyte layer, and a nanocrystal layer; the positive electrode and the nanocrystal layer are respectively located on two opposite surfaces of the sulfide solid electrolyte layer; the material of the nanocrystal layer includes at least one of a lithium-silicon compound, a lithium-silicon-germanium compound, and a doped or undoped lithium-germanium compound; the lithium-silicon compound includes at least one of Li 12 Si7, Li 13 Si4, and Li7Si3 and at least includes Li 12 Si7; the lithium-silicon-germanium compound includes Li 12 (Si 1‑x Ge x )7, where 0 < x ≤ 0.3; the lithium-germanium compound includes at least one of Li 12 Ge7, Li7Ge3, and Li 13 Ge4, and the doping element in the lithium-germanium compound includes at least one of Al, Ga, and B; the grain diameter in the nanocrystal layer is 3 nm to 20 nm; the solid-state battery has no initial negative electrode. The solid-state battery of this application can deposit lithium orderly on the surface of the sulfide solid electrolyte, and the nucleation overpotential is relatively low.

The invention discloses a divalent tin / germanium compound and a preparation method thereof. The divalent tin / germanium compound has the following structure, wherein M is Sn or Ge. The novel bivalent tin / germanium compound synthesized by the method is low in boiling point and good in stability, is in a liquid state at normal temperature, and is suitable for an atomic layer deposition process; the target product is prepared by adopting a one-pot method, the operation conditions are convenient, the product yield is high, meanwhile, raw materials are wide in source and cheap, and the method is suitable for large-scale production.

The invention relates to a solid-state battery, a preparation method and preparation equipment thereof and electric equipment. The solid-state battery comprises a positive electrode, a sulfide solid-state electrolyte layer and a nanocrystalline layer, the positive electrode and the nanocrystalline layer are respectively positioned on two opposite surfaces of the sulfide solid electrolyte layer; the material of the nanocrystalline layer comprises at least one of a lithium-silicon compound, a lithium-silicon-germanium compound and a doped or undoped lithium-germanium compound; the lithium silicon compound comprises at least one of Li12Si7, Li13Si4 and Li7Si3, and at least comprises Li12Si7; the lithium silicon germanium compound comprises Li < 12 > (Si < 1-x > Ge < x >) < 7 >, wherein 0 lt; x is smaller than or equal to 0.3; the lithium germanium compound comprises at least one of Li12Ge7, Li7Ge3 and Li13Ge4, and a doping element in the lithium germanium compound comprises at least one of Al, Ga and B; the diameter of crystal grains in the nanocrystalline layer is 3 nm to 20 nm; the solid-state battery has no initial negative electrode. According to the solid-state battery, lithium can be orderly deposited on the surface of the sulfide solid-state electrolyte, and the nucleation overpotential is relatively low.

The invention discloses a broadband near-infrared stress luminescent material without pre-irradiation as well as a preparation method and application of the broadband near-infrared stress luminescent material. The material is La < 3 > Ga < 5-5x > GeO < 14: 5x > Cr < 3 + >, wherein x is greater than or equal to 0.0025 and less than or equal to 0.02; the crystal structure belongs to a P321 trigonal system structure, and the active ion is Cr < 3 + >. The preparation method comprises the following steps: respectively weighing a lanthanum-containing compound raw material, a gallium-containing compound raw material, a germanium-containing compound raw material and a chromium-containing compound raw material, uniformly grinding the raw materials, grinding, pre-sintering, calcining, cooling to room temperature along with a furnace, and grinding to obtain the near-infrared stress luminescent material without pre-irradiation. The material disclosed by the invention shows broadband emission in a near-infrared 1 region range, and has good self-energy-supply performance, the stress luminescence intensity can be self-recovered, and the stress luminescence intensity can be kept at a considerable level even if force circulation times are continuously applied for multiple times. The material can be used for preparing a stress luminescent film suitable for biological physiological parameter detection.

The invention relates to the technical field of cosmetics, in particular to a gel moisturizer containing germanium-loaded microspheres, which is prepared from the following components in percentage by weight: 0.5 to 5 percent of germanium-loaded microspheres, 10 to 30 percent of gel matrix, 5 to 20 percent of moisturizer, 1 to 5 percent of emulsifier, 0.1 to 1 percent of preservative, 0.01 to 0.1 percent of essence and the balance of deionized water. The germanium element-loaded microspheres are prepared by mixing carrier materials (such as chitosan, sodium alginate and gelatin) with an organic germanium compound Ge-132 and carrying out high-pressure homogenization and spray drying, the particle size is 1-10 [mu] m, and the germanium element loading capacity is 5-15%. The invention also provides a preparation method of the moisturizer. The preparation method has the beneficial effects that through a microsphere loading technology, the stability, the dispersity and the biocompatibility of the germanium element in the moisturizer are remarkably improved, the skin irritation is reduced, meanwhile, the skin care effects of moisturizing, oxidation resistance and the like of the moisturizer are enhanced, and the moisturizer is suitable for various skin types.

The utility model relates to a device for reducing IV-valent germanium into a II-valent germanium compound in a liquid state. The device for reducing the IV-valent germanium into the II-valent germanium compound in the liquid state comprises an electric jacket, a three-neck flask, a circulating cooling reflux mechanism, a first-stage absorption bottle and a second-stage absorption bottle, an inner cavity of the electric jacket is in a concave hemispherical shape, the three-neck flask is arranged in the inner cavity of the electric jacket, a thermometer is arranged in a left opening of the three-neck flask, a middle opening of the three-neck flask is a feeding opening, a right opening of the three-neck flask is connected with the circulating cooling backflow mechanism, an upper opening of the circulating cooling backflow mechanism is an inlet, a lower opening of the circulating cooling backflow mechanism is an outlet, and a spiral cooling pipe is arranged in the circulating cooling backflow mechanism. The circulating cooling backflow mechanism is communicated with the first-stage absorption bottle through a flow guide pipe, a side opening of the first-stage absorption bottle is communicated with the second-stage absorption bottle through a flow guide pipe, and a side opening of the second-stage absorption bottle is communicated with the outside. According to the method, the IV-valent germanium can be reduced into the II-valent germanium compound in a liquid state, the conversion and reduction reaction process is safe, suck-back is avoided, the method is green and environmentally friendly, and no tail gas is discharged through two-stage or more absorption.

The invention relates to silicon and germanium compounds with special aromatic substituents for use in electronic devices, in particular in organic electroluminescent devices, and to electronic devices, in particular organic electroluminescent devices, which contain these OLED materials.

The invention relates to organic light-emitting materials, in particular silicon compounds and germanium compounds having aromatic substituents, which are suitable for use in electronic devices; and also to electronic devices, in particular organic electroluminescent devices containing these OLED materials.

This invention relates to the field of polyesters, and discloses a modified copolyester, its preparation method, and its applications. The modified copolyester comprises a germanium-containing compound and a modified inorganic material. The germanium-containing compound has a structure as shown in Formula (I), and the modified inorganic material includes an inorganic material and an alkyl alcohol modified on the inorganic material. This modified copolyester exhibits a low zero-shear viscosity and a high Vicat softening temperature, facilitating subsequent processing and applications. Formula (I).

The application belongs to the technical field of enzyme catalysis, and relates to application and method of cytochrome P450 enzyme in preparation of organic germanium compound. The method utilizes a wide active pocket of cytochrome P450 BM3-F87A mutant protein to catalyze generation of a racemic body of the organic germanium compound, so that the racemic body is not provided with significant stereoselectivity in a process of catalyzing a carbene to insert a Ge-H bond to construct a chiral center, so as to guide the product to generate the racemic body in an enantiomer 1:1 ratio. The recombinant microorganism constructed by using the bioengineering technology realizes large-scale synthesis of the racemic body of the organic germanium compound, and cost is reduced. In addition, the whole process is carried out in an aqueous solution at room temperature, the reaction condition is mild, safe and environment-friendly, and the development requirement of green chemistry is completely met.

The present disclosure provides a new series of compounds exhibiting high fluorescence quantum yields in the solid state. In one embodiment, the compounds include a series of 2,3,4,5-tetraphenylgermoles with the same or different 1,1-substituents. In another embodiment, substituted germafluorenes, germa-fluoresceins / rhodamines, and germapins are described. These germanium heterocycles possess ideal photophysical and thermostability properties, which makes them excellent candidates for chemical or biological sensors, host materials for electroluminescent devices and solar cells, and emissive and / or electron-transport layer components in organic light emitting diode devices.

Provided is a method for producing a film containing Sn and Ge, which includes: an Sn film formation step for forming an Sn-containing film using a tin compound as a starting material gas; and a Ge film formation step for forming a Ge-containing film using a germanium compound as a starting material gas. The film formation is performed by a chemical vapor deposition method or an atomic layer deposition method by supplying the starting material gas into a chamber in which an object to be processed having a film formation surface is housed.

To provide novel means for inducing the polarization of macrophages toward the M1 type.SOLUTION: The present invention provides an M1 polarization agent and a SIRPα expression inhibitor for macrophages, which contain at least one selected from among compounds of the general formula (I) in the figure, pharmaceutically acceptable salts and esters thereof, and polymers thereof. The present invention also provides the use of the M1 polarization agent and M1-polarized macrophages in the treatment of diseases or conditions, particularly in the treatment of cancer.SELECTED DRAWING: Figure 1

This invention provides a palladium plating solution for forming a palladium plating film using multilayer coatings such as nickel plating films, palladium plating films, and gold plating films, which offers superior heat resistance and barrier properties compared to conventional solutions. [Solution] The palladium plating solution of the present invention comprises a soluble palladium salt as a palladium source, a water-soluble germanium compound, and a conductive salt as essential components, and further includes an organic additive consisting of a monocyclic aromatic hydrocarbon or polycyclic aromatic hydrocarbon (aromatic hydrocarbons include heterocyclic aromatic hydrocarbons) or a salt thereof having a sulfo group or a carboxyl group as a diffusion inhibitor. The palladium plating film formed by the present invention has excellent heat resistance and can maintain its barrier layer even after being subjected to long-term thermal history, for example, in ceramic packages.

This disclosure related to a polyimide precursor comprising composition that includes at least one resin; and at least one acyl germanium compound, as well as related processes, films, cured film structures, and articles such as laminates or semiconductors. Further, said precursor is a heterocycle-forming polymer precursor, wherein the heterocycle-forming polymer precursor is selected from a polyimide (PI) precursor comprising Formula (1).