114 results about "Germanium compounds" patented technology

Techniques for forming shallow junctions are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for forming shallow junctions. The method may comprise generating an ion beam comprising molecular ions based on one or more materials selected from a group consisting of: digermane (Ge₂H₆), germanium nitride (Ge₃N₄), germanium-fluorine compounds (GF_n, wherein n=1, 2, or 3), and other germanium-containing compounds. The method may also comprise causing the ion beam to impact a semiconductor wafer.

A germanium (Ge) compound is provided. The Ge compound has a chemical formula GeR¹xR²y. “R¹” is an alkyl group, and “R²” is one of hydrogen, amino group, allyl group and vinyl group. “x” is greater than zero and less than 4, and the sum of “x” and “y” is equal to 4. Methods of forming the Ge compound, methods of fabricating a phase change memory device using the Ge compound, and phase change memory devices fabricated using the Ge compound are also provided.

The present invention is the preparation process of pyridine and methyl pyridine and aims at providing production process superior to available technology, which has low selectivity and low yield of products pyridine and methyl pyridine. The technological scheme of the present invention adopts ammonia, formaldehyde and acetaldehyde under gas phase as material and molecular sieve modified with organic solution of silicon compound and/or germanium compound as catalyst. The present invention may be used in the industrial production of pyridine and methyl pyridine.

The present invention provides a chemical conversion solution and the surface treating method for realizing high corrosion resistance and high coating adhesion of the metal surface, as well as high throwing power during electrodeposition, and generating no sludge.

A chemical conversion solution comprising (A) at least one compound selected from water-soluble germanium compound, water-soluble tin compound, and water-soluble copper compound, (B) at least one compound selected from water-soluble titanium compound and water-soluble zirconium compound, (C) at least one water-soluble nitrate compound, (D) at least one compound selected from water-soluble aluminum compound and water-soluble magnesium compound, (E) at least one water-soluble zinc compound, and (F) at least one fluorine compound, and, the coating process for the metal structure.

Germanium compounds suitable for use as vapor phase deposition precursors for germanium films are provided. Methods of depositing films containing germanium using such compounds are also provided. Such germanium films are particularly useful in the manufacture of electronic devices.

The invention provides a negative electrode active material for a lithium-ion/sodium-ion secondary battery, a negative electrode and a battery, belonging to the technical field of electrochemistry and batteries. The negative electrode active material comprises a phosphorus-germanium compound, or/and a first complex formed by the phosphorus-germanium compound and elementary P or/and elementary Ge, or/and a second complex formed by the phosphorus-germanium compound and conductive components, or/and a third complex formed by the first complex and conductive components. The negative electrode provided by the invention comprises the negative electrode active material. The negative electrode has the advantages of high specific capacity, high initial Coulomb efficiency, small charge-discharge voltage platform difference and good high-current charge-discharge performance.

The present invention provides silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the compounds. The compounds are defined by formula: SiHnI (GeHn2)y, wherein y is 2, 3, or 4 wherein n1 is 0 1, 2 or 3 to satisfy valency and wherein n2 is independently 0, 1, 2 or 3 for each Ge atom in the compound, to satisfy valency.

The present invention is germanium recovering method in metallurgical technology. Low-grade weak acid germanium material is first neutralized and converted via adding white coal powder, lime slurry, wood dust and water to regulate pH to 8-9, and stoved or wind dried to produce lumpy material; the lumpy material is roasted in furnace with coke and white coal to volatilize and reduce germanium compound; and the germanium containing smoke and dust is cooled in the flue and collected in smoke and dust collector to obtain the mixture with relatively high germanium content. The method of the present invention may be applied in recovering germanium from low-grade weak acid germanium material with germanium content below 0.5 %, and the collected smoke and dust has germanium content increased to 15-20 %.

The invention relates to a cultivation method for an organic tea plant containing nanometer germanium, and aims to provide the cultivation method for the organic tea plant containing nanometer germanium. The method can help the tea plant in absorbing nanometer germanium without using any pesticide or chemical synthesized fertilizer. The method comprises the following steps: tea seedling planting, soil management, fertilizer application management, pest control, and tea plant trimming. During the fertilizer application management, microorganism organic nanometer germanium mixed fertilizer is applied to the tea plant; the microorganism organic nanometer germanium mixed fertilizer is prepared by mixing organic nanometer germanium compound fertilizer and microorganism bacteria; and the microorganism bacteria comprise a photosynthesis bacterium, a nitrobacterium, a violet non-sulfur bacterium, a denitrifying bacterium and a green sulfur bacterium. The cultivation method can make the leaves of the tea plant stably contain abundant nanometer germanium. Each 100g of tea made from the leaves contains 40 to 65 micrograms of nanometer germanium; and the prepared tea completely meets the standards for organic tea by International Federation of Organic Agriculture Movements.

A method for producing germane gas from a germanium-containing solid. The germanium-containing solid may be an oxidic or non-oxidic form of germanium and may further include silicon, metals, or other elements in combination with germanium. The process includes oxidizing the germanium-containing solid phase starting material, where the oxidation may be effected by contacting the germanium-containing solid phase starting material with an oxidizing solution. The oxidizing solution may be a basic solution comprising a hydroxide or an acidic solution. The oxidation product of the germanium-containing solid phase starting material is converted to germane through an electrochemical or chemical reduction process.

The invention provides a polyester, which is produced by using a novel polyester polycondensation catalyst without the previous polycondensation catalyst such as an antimony compound, a germanium compound and the like as a main component, has sufficient degree of polymerization and thermal stability, and prevent the coagulation of inorganic particles, after the polyester is used for a polyester film, the obstruction of a filter is less, the smooth performance or traveling performance and the abrasion resistance are excellent, the quality reduction caused by the defect or foreign body on the film is less. The polyester composition is obtained by the polymerization in the presence of the polycondensation catalyst containing aluminium compound and lithium compound, wherein, the polyester composition contains 0.02 to 1.0 wt% of inertia inorganic particles with the average particle size of 0.5 to 3.0 mum, the amount of the coarse particles with the particle size of 10 mum is below 1000/mm<2>.

Provided is an organic electroluminescent device that brings together a high efficiency, high durability, and a high color purity. The organic electroluminescent device includes an anode, a cathode, and a layer including an organic compound interposed between the anode and the cathode, in which the layer contains at least one organic germanium compound having two or more fluorenyl groups per one germanium atom.

A method of preparing an optical preform includes the steps of: a) etching an optical preform to remove a portion of an oxide material deposited on the preform by using a gas comprising an etchant gas containing fluorine at a sufficient temperature and gas concentration to create a redeposited germanium containing compounds contamination such as GeO_x in the remaining oxide material; and b) cleaning the etched preform using a cleaning gas containing at least one halogen gas at a sufficient temperature and gas concentration to remove the redeposited germanium containing compound contamination without any substantial further contamination of the remaining deposited oxide material. Preferably the halogen is either chlorine or bromine.

Highly ordered Ge films are prepared directly on single crystal Si substrates by applying an aqueous coating solution having Ge-bound polymer onto the substrate and then heating in a hydrogen-containing atmosphere. A coating solution was prepared by mixing water, a germanium compound, ethylenediaminetetraacetic acid, and polyethyleneimine to form a first aqueous solution and then subjecting the first aqueous solution to ultrafiltration.

In a gas-barrier laminate having a layer structure of aromatic polyester resin/polyglycolic acid resin/aromatic polyester resin, a small amount of an aromatic polyester resin polymerized with a germanium compound (catalyst) is blended to the polyglycolic acid resin forming the core layer, thereby surface-roughening the polyglycolic acid resin layer. As a result, the peeling resistance between the polyglycolic acid resin/aromatic polyester resin layers is practically improved while maintaining a good gas-barrier property.

Provided is a germanium complex represented by Chemical Formula 1 wherein Y1 and Y2 are independently selected from R3, NR4R5 or OR6, and R1 through R6 independently represent (Ci-C7) alkyl. The provided germanium complex with an amidine derivative ligand is thermally stable, is highly volatile, and does not include halogen components. Therefore, it may be usefully used as a precursor to produce high-quality germanium thin film or germanium-containing compound thin film by metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD).