522results about "Tin organic compounds" patented technology

As a high-performance resist material, a tin compound is provided which has properties such as solubility, hydrophobicity, and resist sensitivity with good balance. A tin compound includes a tin atom; an organic group R; and at least one of an oxo-ligand and a hydroxo-ligand. One molecule of the tin compound includes two or more types of organic group R and includes a Sn—O—Sn structure, and the organic group R has 1 to 30 carbon atoms.

The invention discloses a tetranuclear ladder type organic tin carboxylate complex as well as a preparation method and application thereof, and belongs to the technical field of metal complexes, the tetranuclear ladder type organic tin carboxylate complex is prepared by taking para-position or ortho-position substituted benzoic acid as a ligand and taking organic tin dimethyl tin oxide as a substrate. The preparation method is simple to operate and mild in condition. The tetranuclear ladder type organic tin carboxylate complex can be used as a photocatalyst for photocatalytic production of H2O2, and the photocatalytic H2O2 production rate is as high as 5.12 * 10 < 3 > [mu] mol.g <-1 >. H <-1 > and is higher than the H2O2 production rate of a photocatalyst reported in the existing literature.

Monoorgano tin trialkoxide compounds having chemical formula R'SnX3 and containing less than about 5 mol% R'2SnX2are described. R' is an optionally substituted organic substituent having about 1 to about 20 carbon atoms and each X is independently ORf, wherein Rf is a fluorinated organic substituent having about 1 to about 20 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.

Aspects of the disclosure relate to methods for producing organotin compounds with high purity, which may involve the use of specific additives or reaction conditions. Methods for purifying organotin compounds and suppressing the formation of impurities in organotin compounds are also described.

Aspects of the disclosure relate to methods for producing organotin compounds with high purity, which may involve the use of specific additives or reaction conditions. Methods for purifying organotin compounds and suppressing the formation of impurities in organotin compounds are also described.

As a high-performance resist material that can have high purity and uniform solubility, the following tin compound is provided. The tin compound includes: a tin atom; an organic group R; and at least one of an oxo-ligand and a hydroxo-ligand, wherein the tin compound has a diffraction angle 2θ (°) of a peak with a strongest intensity between 5.00 to 15.00° in X-ray diffraction measurement, the strongest intensity peak has a half-value width of 1.00 to 4.00°, and the organic group R has 1 to 30 carbon atoms.

Monoorgano tin compounds having chemical formula R′SnX3 and high purity are described. R′ is an optionally substituted hydrocarbyl group, X is selected from NR2 and OR, and each R is independently a linear or branched alkyl group having about 1 to about 10 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.

A method for producing a tin compound represented by formula (A1) with a purity of 95 mol % or higher, involves a step of distilling the tin compound, in which the number of plates of the distillation is 10 or more, and the reflux ratio is 30 or less.RSnX3  (A1)In formula (A1), R is an organic group with 1 to 30 carbon atoms, and may be substituted with halogen, oxygen atoms, or nitrogen atoms. X is selected from OR′ and NR′2. R′ is an organic group with 1 to 10 carbon atoms, and part may be substituted with halogen, oxygen atoms, or nitrogen atoms. When there are multiple R′ groups in the molecule, they may have the same or different structures, and they may be bonded to each other to form a cyclic structure.

To provide a patterning process used for a resist underlayer film material having excellent dry etching resistance.SOLUTION: A compound for forming a metal-containing film is represented by the general formula (M) in the figure, where each T independently represents the general formula (T-1) or (T-2) in the figure; P independently represents *OCOR, where the asterisk represents an attachment point to the Sn atom and R represents a monovalent organic group; each Q independently represents a C1-20 alkyl group, cycloalkyl group, aliphatic unsaturated hydrocarbon group, alkoxy group, or C6-30 aryl group.SELECTED DRAWING: Figure 1

The invention relates to a novel preparation method of tetra (dimethylamino) tin. The method comprises the following steps: in a nitrogen atmosphere, pumping an n-hexane solution of n-butyllithium and an n-hexane solution of dimethylamine into a pipeline through a propeller, mixing through a T-shaped joint, and reacting through a flow reactor 1 and a flow reactor 2 to obtain a lithium dimethylamide mixed solution; the method comprises the following steps: pumping a lithium dimethylamino mixed solution and a n-hexane solution of tin tetrachloride into a pipeline through a propeller, mixing through a T-shaped joint, and reacting through a flow reactor 3 and a flow reactor 4 to obtain a crude tetra (dimethylamino) tin product; and centrifuging and filtering the tetra (dimethylamino) tin crude product, adsorbing impurities by adopting a resin column, and carrying out reduced pressure distillation to remove the solvent, thereby obtaining the tetra (dimethylamino) tin. The adsorption resin column adopts modified macroporous adsorption resin, and is obtained by reacting, filtering and drying D190 macroporous styrene sulfydryl resin, dichloroethane, tetramethylguanidine, 5-allylpyrimidine-4, 6-diol and an ethylene boric anhydride pyridine complex.

The present invention provides an amidinate compound represented by the following general formula (1) or a dimer compound thereof, and a method of producing a thin-film including using the compound as a raw material:where R1 and R2 each independently represent an alkyl group having 1 to 5 carbon atoms, R3 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M represents a metal atom or a silicon atom, and “n” represents the valence of the atom represented by M, provided that at least one hydrogen atom of R1 to R3 is substituted with a fluorine atom.

Monoorgano tin compounds having chemical formula R'SnX3 and high purity are described. R' is an optionally substituted hydrocarbyl group, X is selected from NR2 and OR, and each R is independently a linear or branched alkyl group having about 1 to about 10 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.

The invention relates to the technical field of tetramethyltin synthesis, in particular to a high-efficiency tetramethyltin synthesis process which comprises the following steps: S1, material selection and preparation: selecting corresponding raw materials according to tetramethyltin synthesis requirements, dividing the raw materials into main materials, auxiliary materials and additives, and subsequently weighing the raw materials by using a weighing device; s2, material pretreatment: adding the weighed main material into a dehydration device, starting the dehydration device to carry out dehydration treatment, detecting after dehydration is finished, and taking out the dehydrated main material when a detection result meets a standard; by introducing the double-stage design of low-temperature catalytic methylation and gradient heating reaction and combining a dimethyl sulfide catalytic system to replace a traditional iodine initiator and magnesium powder dynamic equilibrium mechanism, the reaction heat release rate is greatly reduced, the temperature in the whole reaction process is kept in a constant range, the material flushing or explosion risk caused by local overheating is thoroughly eliminated, and the product quality is improved. And intrinsically safe production is realized.

The disclosed and claimed subject matter relates to Sn6-oxo clusters with carboxylic acids containing linear ester or cyclic ester (lactone) functional groups, the synthesis thereof, formulations thereof and use thereof in EUV lithography.

A semiconductor photoresist composition and a method of forming or providing patterns using the semiconductor photoresist composition are disclosed. The semiconductor photoresist composition may include a first organometallic compound represented by Chemical Formula 1, a second organometallic compound represented by Chemical Formula 2, and a solvent.

Provided are an organometallic compound represented by one of formulae 1-1 to 1-4 in which M11, Q11 to Q14, b11 to b14, R11 to R14, Y11 to Y13, and X11 to X13 are as described in the specification, a resist composition including the same, and a pattern forming method using the resist composition. # imgabs0 #

The present invention relates to PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PATTERNS USING A PHOTORESIST COMPOSITION. Disclosed is a photoresist composition including an organometallic compound including a ring including a metal, a first heteroatom coordinated to the metal, and a second heteroatom covalently bonded to the metal, and an aromatic ring substituted or fused to the ring; and a solvent.

Methods are provided. A method comprises contacting a tin (IV) compound with a reagent to form at least one reaction product. The regent comprises at least one of a metal alkoxide compound, a metal amide compound, or any combination thereof. The at least one reaction product comprises at least one of a substituted tin (IV) amide compound, a substituted tin (IV) alkoxide compound, or any combination thereof. Various compositions and various compounds, among other things, are also provided.

The present invention provides a method for preparing an organostannane compound catalyzed by diethylzinc, belonging to the technical field of preparing stannane compounds. The method can solve the problems urgently needed to be solved in the preparation method of such stannane compounds. The method comprises: mixing an acetylene compound, a tin hydrogen compound, and a diethylzinc catalyst under an inert atmosphere; reacting the reaction system at 60 to 70°C for 18 to 24 hours, then exposing the reaction system to air to terminate the reaction, and purifying the organostannane compound by column chromatography, wherein the inert atmosphere is nitrogen. The stannane compound is a vinyl stannane compound or an ethynyl stannane compound, and the acetylene compound is an aliphatic acetylene compound or an aromatic acetylene compound. The present invention solves the problems urgently needed to be solved in the preparation method of such organostannane compounds, such as the high cost of the catalyst used, the environmentally unfriendly nature of the catalyst, and the complex operation process.

To provide: a metal compound having better dry etching resistance than conventional organic underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film employing the compound; and a patterning process in which the composition is used as a resist underlayer film material.SOLUTION: A compound for forming a metal-containing film is a reaction product between a compound having two or more diol structures per molecule and a Sn compound, and is a monomolecular compound containing two or more Sn atoms per molecule.SELECTED DRAWING: Figure 1

A light-receiving device in which an increase in driving voltage is inhibited is provided. Any of the following light-receiving devices is provided: a light-receiving device that includes a light-receiving layer between a pair of electrodes and in which the light-receiving layer includes an active layer, a buffer layer, and an electron-transport layer, the buffer layer is between the active layer and the electron-transport layer and is in contact with the active layer, and the buffer layer includes an organic compound having an electron-withdrawing group; a light-receiving device that includes a light-receiving layer between a pair of electrodes and in which the light-receiving layer includes an active layer, a buffer layer, and an electron-transport layer, the buffer layer is between the active layer and the electron-transport layer and is in contact with the active layer, and the buffer layer includes a heteroaromatic compound having an electron-withdrawing group.

Synthesis reactions are described to efficiently and specifically form compounds of the structure RSnL3, where R is an organic ligand to the tin, and L is hydrolysable ligand or a hydrolysis product thereof. The synthesis is effective for a broad range of R ligands. The synthesis is based on the use of alkali metal ions and optionally alkaline earth (pseudo-alkaline earth) metal ions. Compounds are formed of the structures represented by the formulas RSn(C≡CSiR′3)3, R′R″ACSnL3, where A is a halogen atom (F, Cl, Br or I) or an aromatic ring with at least one halogen substituent, R′R″(R″′O)CSnL3 or R′R″(N≡C)CSnZ3.

The invention relates to the technical field, in particular to an asymmetric donor material containing tin atoms and a preparation method and application of the asymmetric donor material, the structural formula of the asymmetric donor material is shown in the formula 1, and in the structural formula # imgabs0,-X is a fluorine atom or a chlorine atom; the tin atom-containing small molecule donor material designed by the invention can form a proper energy level difference with an acceptor material L8-BO, which is beneficial to exciton dissociation, and has better photovoltaic performance in the test of organic solar cells, and the small molecule has a clear molecular structure in the full-small molecule organic solar cells, so that the application range of the small molecule donor material is widened, and the application range of the small molecule donor material is widened. And the difference between the material and the device batch is very small, so that the method has unique advantages in the commercialization aspect. The method is of great significance for constructing a high-efficiency organic solar cell system.

An organotin photoresist composition and a method of forming photolithography pattern are described. The organotin photoresist composition comprises a bridged-(stannocenyl)tin compound, a solvent, and / or an additive. Stannocenyl comprises bis(cyclopentadienyl)tin, or substituted bis(cyclopentadienyl)tin, wherein cyclopentadienyl is cyclopentadienyl C5H5 group, or substituted cyclopentadienyl C5H3R, C5H2R2, C5HR3, or C5R4 group. A method of forming the pattern comprises: depositing bridged-(stannocenyl)tin compound photoresist over a substrate to form a photoresist layer, exposing the photoresist layer to actinic radiation to form a latent pattern, and then developing to form photolithography pattern.

Two classes of cyclic tin compounds are described, trioxa-aza-1-stannabicyclo-[3.3.3]-undecanes, also known as stannatranes, and tetraaza-1-stannabicyclo-[3.3.3]-undecanes, also known as azastannatranes, as well as methods for their preparation. These cyclic tin compounds are resistant to rearrangement, and no generation of dialkyltin impurities is observed during the synthesis, purification, or deposition of these compounds to form oxostannate films.

Provided are an organometallic compound represented by Formula 1, a resist composition including the same, and a pattern formation method using the resist composition,M11(Rx)n(Ry)(m-n),  Formula 1wherein reference should be made to the specification for the descriptions of M11, Rx, Ry, n and m in Formula 1.

The invention discloses a double-cap type organic tin carboxylate complex as well as a preparation method and application thereof, and belongs to the technical field of metal complexes, the double-cap type organic tin carboxylate complex is prepared by taking meta-substituted benzoic acid as a ligand and taking organic tin dimethyl tin oxide as a substrate. The preparation method is simple to operate and mild in condition. The double-cap type organic tin carboxylate complex can be used as a photocatalyst for photocatalytic production of H2O2, the photocatalytic H2O2 production rate is as high as 4.93 * 10 < 3 > mu mol.g <-1 >. H <-1 >, the catalytic performance of the double-cap type organic tin carboxylate complex is equivalent to that of a photocatalyst with the highest H2O2 production rate reported in existing literatures, and the double-cap type organic tin carboxylate complex has a good application prospect.

A pattern formation method may use a resist composition. The resist composition may include an organometallic compound represented by any one of Formulae 1-1 to 1-4, an additive represented by Formula 2, and a solvent. The solvent may include a non-polar solvent, a polar aprotic solvent, or a combination thereof.Refer to the specification for the descriptions of M11, L11 to L14, a11 to a14, R11 to R14, b11 to b14, Y11 to Y13, X11 to X13, Y21, Y22, L21, and a21 in Formulae 1-1 to 1-4 and 2.

The present invention is a compound for forming a metal-containing film, represented by the following general formula (M), where T independently represents the following general formula (T-1) or (T-2); P independently represents *OCOR, “*” representing an attachment point to the Sn atom and R representing a monovalent organic group; Q independently represents an alkyl group, cycloalkyl group, aliphatic unsaturated hydrocarbon group, or alkoxy group of C1 to 20, an aryl group of C6 to 30, an arylalkyl group of C7 to 31, or a halogen atom; and “n1”, “n2”, and “n3” represent an integer satisfying n1≥1, n2≥0, n3≥1, and n1+n2+n3=4. This can provide: a metal compound having excellent dry etching resistance and also having both high film-formability and a high tin content; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist underlayer film material.

A semiconductor photoresist composition includes an organotin compound represented by Chemical Formula 1, and a solvent. A method for preparing the same, and a method of forming patterns utilizing the same are disclosed.Specific details of Chemical Formula 1 are as defined in the specification.