390results about "Tin organic compounds" patented technology

The invention discloses a tetranuclear ladder type organic tin carboxylate complex as well as a preparation method and application thereof, and belongs to the technical field of metal complexes, the tetranuclear ladder type organic tin carboxylate complex is prepared by taking para-position or ortho-position substituted benzoic acid as a ligand and taking organic tin dimethyl tin oxide as a substrate. The preparation method is simple to operate and mild in condition. The tetranuclear ladder type organic tin carboxylate complex can be used as a photocatalyst for photocatalytic production of H2O2, and the photocatalytic H2O2 production rate is as high as 5.12 * 10 < 3 > [mu] mol.g <-1 >. H <-1 > and is higher than the H2O2 production rate of a photocatalyst reported in the existing literature.

Monoorgano tin trialkoxide compounds having chemical formula R'SnX3 and containing less than about 5 mol% R'2SnX2are described. R' is an optionally substituted organic substituent having about 1 to about 20 carbon atoms and each X is independently ORf, wherein Rf is a fluorinated organic substituent having about 1 to about 20 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.

As a high-performance resist material that can have high purity and uniform solubility, the following tin compound is provided. The tin compound includes: a tin atom; an organic group R; and at least one of an oxo-ligand and a hydroxo-ligand, wherein the tin compound has a diffraction angle 2θ (°) of a peak with a strongest intensity between 5.00 to 15.00° in X-ray diffraction measurement, the strongest intensity peak has a half-value width of 1.00 to 4.00°, and the organic group R has 1 to 30 carbon atoms.

A method for producing a tin compound represented by formula (A1) with a purity of 95 mol % or higher, involves a step of distilling the tin compound, in which the number of plates of the distillation is 10 or more, and the reflux ratio is 30 or less.RSnX3  (A1)In formula (A1), R is an organic group with 1 to 30 carbon atoms, and may be substituted with halogen, oxygen atoms, or nitrogen atoms. X is selected from OR′ and NR′2. R′ is an organic group with 1 to 10 carbon atoms, and part may be substituted with halogen, oxygen atoms, or nitrogen atoms. When there are multiple R′ groups in the molecule, they may have the same or different structures, and they may be bonded to each other to form a cyclic structure.

To provide a patterning process used for a resist underlayer film material having excellent dry etching resistance.SOLUTION: A compound for forming a metal-containing film is represented by the general formula (M) in the figure, where each T independently represents the general formula (T-1) or (T-2) in the figure; P independently represents *OCOR, where the asterisk represents an attachment point to the Sn atom and R represents a monovalent organic group; each Q independently represents a C1-20 alkyl group, cycloalkyl group, aliphatic unsaturated hydrocarbon group, alkoxy group, or C6-30 aryl group.SELECTED DRAWING: Figure 1

Monoorgano tin compounds having chemical formula R'SnX3 and high purity are described. R' is an optionally substituted hydrocarbyl group, X is selected from NR2 and OR, and each R is independently a linear or branched alkyl group having about 1 to about 10 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.

The invention relates to the technical field of tetramethyltin synthesis, in particular to a high-efficiency tetramethyltin synthesis process which comprises the following steps: S1, material selection and preparation: selecting corresponding raw materials according to tetramethyltin synthesis requirements, dividing the raw materials into main materials, auxiliary materials and additives, and subsequently weighing the raw materials by using a weighing device; s2, material pretreatment: adding the weighed main material into a dehydration device, starting the dehydration device to carry out dehydration treatment, detecting after dehydration is finished, and taking out the dehydrated main material when a detection result meets a standard; by introducing the double-stage design of low-temperature catalytic methylation and gradient heating reaction and combining a dimethyl sulfide catalytic system to replace a traditional iodine initiator and magnesium powder dynamic equilibrium mechanism, the reaction heat release rate is greatly reduced, the temperature in the whole reaction process is kept in a constant range, the material flushing or explosion risk caused by local overheating is thoroughly eliminated, and the product quality is improved. And intrinsically safe production is realized.

A semiconductor photoresist composition and a method of forming or providing patterns using the semiconductor photoresist composition are disclosed. The semiconductor photoresist composition may include a first organometallic compound represented by Chemical Formula 1, a second organometallic compound represented by Chemical Formula 2, and a solvent.

The present invention provides a method for preparing an organostannane compound catalyzed by diethylzinc, belonging to the technical field of preparing stannane compounds. The method can solve the problems urgently needed to be solved in the preparation method of such stannane compounds. The method comprises: mixing an acetylene compound, a tin hydrogen compound, and a diethylzinc catalyst under an inert atmosphere; reacting the reaction system at 60 to 70°C for 18 to 24 hours, then exposing the reaction system to air to terminate the reaction, and purifying the organostannane compound by column chromatography, wherein the inert atmosphere is nitrogen. The stannane compound is a vinyl stannane compound or an ethynyl stannane compound, and the acetylene compound is an aliphatic acetylene compound or an aromatic acetylene compound. The present invention solves the problems urgently needed to be solved in the preparation method of such organostannane compounds, such as the high cost of the catalyst used, the environmentally unfriendly nature of the catalyst, and the complex operation process.

A light-receiving device in which an increase in driving voltage is inhibited is provided. Any of the following light-receiving devices is provided: a light-receiving device that includes a light-receiving layer between a pair of electrodes and in which the light-receiving layer includes an active layer, a buffer layer, and an electron-transport layer, the buffer layer is between the active layer and the electron-transport layer and is in contact with the active layer, and the buffer layer includes an organic compound having an electron-withdrawing group; a light-receiving device that includes a light-receiving layer between a pair of electrodes and in which the light-receiving layer includes an active layer, a buffer layer, and an electron-transport layer, the buffer layer is between the active layer and the electron-transport layer and is in contact with the active layer, and the buffer layer includes a heteroaromatic compound having an electron-withdrawing group.

Synthesis reactions are described to efficiently and specifically form compounds of the structure RSnL3, where R is an organic ligand to the tin, and L is hydrolysable ligand or a hydrolysis product thereof. The synthesis is effective for a broad range of R ligands. The synthesis is based on the use of alkali metal ions and optionally alkaline earth (pseudo-alkaline earth) metal ions. Compounds are formed of the structures represented by the formulas RSn(C≡CSiR′3)3, R′R″ACSnL3, where A is a halogen atom (F, Cl, Br or I) or an aromatic ring with at least one halogen substituent, R′R″(R″′O)CSnL3 or R′R″(N≡C)CSnZ3.

Provided are an organometallic compound represented by Formula 1, a resist composition including the same, and a pattern formation method using the resist composition,M11(Rx)n(Ry)(m-n),  Formula 1wherein reference should be made to the specification for the descriptions of M11, Rx, Ry, n and m in Formula 1.

The invention discloses a double-cap type organic tin carboxylate complex as well as a preparation method and application thereof, and belongs to the technical field of metal complexes, the double-cap type organic tin carboxylate complex is prepared by taking meta-substituted benzoic acid as a ligand and taking organic tin dimethyl tin oxide as a substrate. The preparation method is simple to operate and mild in condition. The double-cap type organic tin carboxylate complex can be used as a photocatalyst for photocatalytic production of H2O2, the photocatalytic H2O2 production rate is as high as 4.93 * 10 < 3 > mu mol.g <-1 >. H <-1 >, the catalytic performance of the double-cap type organic tin carboxylate complex is equivalent to that of a photocatalyst with the highest H2O2 production rate reported in existing literatures, and the double-cap type organic tin carboxylate complex has a good application prospect.

A pattern formation method may use a resist composition. The resist composition may include an organometallic compound represented by any one of Formulae 1-1 to 1-4, an additive represented by Formula 2, and a solvent. The solvent may include a non-polar solvent, a polar aprotic solvent, or a combination thereof.Refer to the specification for the descriptions of M11, L11 to L14, a11 to a14, R11 to R14, b11 to b14, Y11 to Y13, X11 to X13, Y21, Y22, L21, and a21 in Formulae 1-1 to 1-4 and 2.

The present invention is a compound for forming a metal-containing film, represented by the following general formula (M), where T independently represents the following general formula (T-1) or (T-2); P independently represents *OCOR, “*” representing an attachment point to the Sn atom and R representing a monovalent organic group; Q independently represents an alkyl group, cycloalkyl group, aliphatic unsaturated hydrocarbon group, or alkoxy group of C1 to 20, an aryl group of C6 to 30, an arylalkyl group of C7 to 31, or a halogen atom; and “n1”, “n2”, and “n3” represent an integer satisfying n1≥1, n2≥0, n3≥1, and n1+n2+n3=4. This can provide: a metal compound having excellent dry etching resistance and also having both high film-formability and a high tin content; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist underlayer film material.

A semiconductor photoresist composition includes an organotin compound represented by Chemical Formula 1, and a solvent. A method for preparing the same, and a method of forming patterns utilizing the same are disclosed.Specific details of Chemical Formula 1 are as defined in the specification.

A high-purity tin composition that can maintain high purity for a long time, in which decomposition of a triaminotin compound is suppressed and high purity of the triaminotin compound is maintained, is provided. The tin composition contains 95 mol % or more of a triaminotin compound having formula (1) in terms of tin atoms, and 0.001 to 0.5 mol % of a tetraaminotin compound having formula (2) in terms of tin atoms:R is a hydrocarbon group having 1 to 30 carbon atoms which is optionally substituted with a halogen, an oxygen atom, or a nitrogen atom, and R's are each a hydrocarbon group having 1 to 10 carbon atoms and may be identical or different from each other; two R's on the same nitrogen atom may be bonded to each other to form a 3- to 7-membered ring containing nitrogen.

Organometallic precursor compositions containing a polyene ligand, such as a diene ligand, are described. Corresponding films are also described and show promising solubility behavior. A synthesis technique is described for forming a polyene-containing organotin trialkoxide compound. The incorporation of polymerization inhibitors and / or blends of organotin compounds with different ligands are described as a way to design radiation sensitive films to have target solubility properties.

The invention discloses a polyphenyltin bridged conjugated structure compound and a preparation method and application thereof, and belongs to the technical field of metal complexes, and the polyphenyltin bridged conjugated structure compound is prepared by taking a reaction product of 1, 4, 5, 8-naphthalene tetracarboxylic dianhydride and p-aminomethyl benzoic acid as a ligand and triphenyltin hydroxide as a substrate. The preparation method is simple to operate and mild in condition. The polyphenyltin bridged conjugated structure compound disclosed by the invention can be used as a photocatalyst for photocatalytic production of H2O2, and the rate of photocatalytic production of H2O2 is as high as 11407.75 [mu] mol h <-1 > g <-1 > under the condition that a reaction light source is 425 nm and is far higher than the rate of photocatalytic production of H2O2 by a photocatalyst reported in the existing literature.

The invention discloses an aryl imide bridged carboxyl tin dinuclear macrocyclic complex as well as a preparation method and application thereof, and belongs to the technical field of metal complexes, the aryl imide bridged carboxyl tin dinuclear macrocyclic complex is prepared by taking a reaction product of 1, 2, 4, 5-benzene tetracarboxylic dianhydride and beta-amino acid as a ligand and dibutyltin oxide as a substrate. The preparation method is simple to operate and mild in condition. The aryl imide bridged carboxyl tin binuclear macrocyclic complex can be used as a photocatalyst for photocatalytic production of H2O2 from water and oxygen, and the photocatalytic production rate of H2O2 reaches up to 9648.56 [mu] mol.h <-1 >. G <-1 > under the condition that the wavelength of a reaction light source is 395 nm and is far higher than the photocatalytic production rate of H2O2 reported in existing literatures.

The present disclosure includes a method of obtaining a trihaloalkyltin, obtaining a solvent, and contacting the trihaloalkyltin with the solvent, thereby forming a trihaloalkyltin adduct. The formula: RSnX 3 ·(solv) n [wherein, R is a substituted C 1 ~C 5 alkyl, an unsubstituted C 1 ~C 5 alkyl, a substituted C 1 ~C 5 alkenyl, or an unsubstituted C 1 ~C 5 alkenyl, X is Cl, Br or I, solv is a solvent, and n is at least 1] also describes a composition comprising a trihaloalkyltin adduct.

The invention provides a patterning composition, a compound, a patterning method, an electronic device and application. The patterning composition includes a compound represented by the following formula: (RaM) b (L1) x (L2) y (L3) z. The patterning composition comprises the metal organic compound coordinated by the specific mixed ligand, so that in the patterning process, the structure can obviously improve the hydrolytic stability of the patterning composition during the patterning process, and the exposure dose is reduced.

This disclosure provides systems and methods for purifying precursor compounds. One method includes one or more of the following steps: mixing a crude product solution with a first solvent, wherein the crude product solution comprises a precursor compound and at least one impurity; wherein the boiling point of the first solvent is higher than the boiling point of the crude product solution; feeding at least the mixture of the crude product solution and the first solvent into an evaporator; and collecting a distillate comprising the precursor compound from the evaporator, wherein the purity of the precursor compound in the distillate is greater than 95%, as determined by [further steps]. 1 Determined by H NMR. Other methods and systems are presented in this paper.

Provided are a resist composition and a pattern forming method using the same. 【Solution means】A resist composition containing an organometallic compound represented by the following chemical formula 1 and an additive represented by the following chemical formula 2, and a pattern forming method using the same: M 11 (R x ) n (R y ) (m-n) [Chemical formula 1] (X2) c2 -(L2) a2 -[Y2-Z2] b2 [Chemical formula 2] In the above chemical formulas 1 and 2, for the explanations of M 11 , R x , R y , n, m, X2, Y2, Z2, L2, a2, b2 and c2, refer to the specification.

The present invention discloses polycyclic condensed-ring conjugated macromolecules based on quinone-type end groups, intermediates thereof, and methods for preparing and applying the same. The polycyclic condensed-ring conjugated macromolecules based on quinone-type end groups of the present invention are compounds represented by the following formula (1). The polycyclic condensed-ring conjugated macromolecules based on quinone-type end groups provided by the present invention have strong near-infrared light absorption and a suitable energy level structure, making them suitable for use as light detection materials or photovoltaic materials in the preparation of light detectors or solar cells. #imgabs0#

Provided is a substance as a high-purity tin compound which can maintain high purity over a long period of time, particularly can suppress decomposition of a triaminotin compound, and can maintain the high purity of the triaminotin compound. A tin compound containing 95 mol% or more of a triaminotin compound represented by general formula (1) in terms of tin atoms and 0.001-0.5 mol% of a tetraaminotin compound represented by general formula (2) in terms of tin atoms. RSn (NR '2) 3 (1) Sn (NR' 2) 4 (2) (In general formula (1) and general formula (2), R is a hydrocarbon group having 1-30 carbon atoms which may be substituted by halogen, oxygen atoms, and nitrogen atoms, and R'may be the same or different and are a hydrocarbon group having 1-10 carbon atoms, where two R 'on the same nitrogen atom may bond to each other to form a 3-7 membered ring including nitrogen).

Describe a monoalkyltin triamide compound having a purity of at least about 99 mol% and the chemical formula RSn(NMe2)3. R 1 is R A 、R B 、and R C selected from, R A is a primary alkyl group having from about 1 to 10 carbon atoms, R B is a secondary alkyl group having from about 3 to 10 carbon atoms, R C is a tertiary alkyl group having from about 3 to 10 carbon atoms, each R 2 is, independently, an alkyl group having from about 1 to 10 carbon atoms, R 1 Sn(NR 2 2)2(N(R 2 )CH2NR 2 2) content is less than about 1 mol%. Methods for synthesizing, purifying, and storing these compounds are also provided. The monoalkyltin compounds can be used for the formation of precursors for high-resolution EUV lithography - pattern formation, which are of interest because of their high purity and minimal concentrations of dialkyltin and other tin impurities.

Provided is a tin compound that is a high-performance resist material capable of having high purity and uniform solubility. A tin compound having a tin atom, an organic group R, and an oxygen ligand and / or a hydroxyl ligand, wherein the diffraction angle 2θ (°) of the peak of the maximum intensity in X-ray diffraction measurement is present in the range of 5.00° to 15.00°, the half-value width of the peak of the maximum intensity is in the range of 1.00° to 4.00°, and the aforementioned organic group R has 1 to 30 carbon atoms.

Monoorgano tin trialkoxide compounds having chemical formula R′SnX3 and containing less than about 5 mol % R′2SnX2 are described. R′ is an optionally substituted organic substituent having about 1 to about 20 carbon atoms and each X is independently ORf, wherein Rf is a fluorinated organic substituent having about 1 to about 20 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.