180results about "Tin organic compounds" patented technology

A light-receiving device in which an increase in driving voltage is inhibited is provided. Any of the following light-receiving devices is provided: a light-receiving device that includes a light-receiving layer between a pair of electrodes and in which the light-receiving layer includes an active layer, a buffer layer, and an electron-transport layer, the buffer layer is between the active layer and the electron-transport layer and is in contact with the active layer, and the buffer layer includes an organic compound having an electron-withdrawing group; a light-receiving device that includes a light-receiving layer between a pair of electrodes and in which the light-receiving layer includes an active layer, a buffer layer, and an electron-transport layer, the buffer layer is between the active layer and the electron-transport layer and is in contact with the active layer, and the buffer layer includes a heteroaromatic compound having an electron-withdrawing group.

Synthesis reactions are described to efficiently and specifically form compounds of the structure RSnL3, where R is an organic ligand to the tin, and L is hydrolysable ligand or a hydrolysis product thereof. The synthesis is effective for a broad range of R ligands. The synthesis is based on the use of alkali metal ions and optionally alkaline earth (pseudo-alkaline earth) metal ions. Compounds are formed of the structures represented by the formulas RSn(C≡CSiR′3)3, R′R″ACSnL3, where A is a halogen atom (F, Cl, Br or I) or an aromatic ring with at least one halogen substituent, R′R″(R″′O)CSnL3 or R′R″(N≡C)CSnZ3.

Provided are an organometallic compound represented by Formula 1, a resist composition including the same, and a pattern formation method using the resist composition,M11(Rx)n(Ry)(m-n),  Formula 1wherein reference should be made to the specification for the descriptions of M11, Rx, Ry, n and m in Formula 1.

The invention provides a patterning composition, a compound, a patterning method, an electronic device and application. The patterning composition includes a compound represented by the following formula: (RaM) b (L1) x (L2) y (L3) z. The patterning composition comprises the metal organic compound coordinated by the specific mixed ligand, so that in the patterning process, the structure can obviously improve the hydrolytic stability of the patterning composition during the patterning process, and the exposure dose is reduced.

This disclosure provides systems and methods for purifying precursor compounds. One method includes one or more of the following steps: mixing a crude product solution with a first solvent, wherein the crude product solution comprises a precursor compound and at least one impurity; wherein the boiling point of the first solvent is higher than the boiling point of the crude product solution; feeding at least the mixture of the crude product solution and the first solvent into an evaporator; and collecting a distillate comprising the precursor compound from the evaporator, wherein the purity of the precursor compound in the distillate is greater than 95%, as determined by [further steps]. 1 Determined by H NMR. Other methods and systems are presented in this paper.

Provided are a resist composition and a pattern forming method using the same. 【Solution means】A resist composition containing an organometallic compound represented by the following chemical formula 1 and an additive represented by the following chemical formula 2, and a pattern forming method using the same: M 11 (R x ) n (R y ) (m-n) [Chemical formula 1] (X2) c2 -(L2) a2 -[Y2-Z2] b2 [Chemical formula 2] In the above chemical formulas 1 and 2, for the explanations of M 11 , R x , R y , n, m, X2, Y2, Z2, L2, a2, b2 and c2, refer to the specification.

Provided is a tin compound that is a high-performance resist material capable of having high purity and uniform solubility. A tin compound having a tin atom, an organic group R, and an oxygen ligand and / or a hydroxyl ligand, wherein the diffraction angle 2θ (°) of the peak of the maximum intensity in X-ray diffraction measurement is present in the range of 5.00° to 15.00°, the half-value width of the peak of the maximum intensity is in the range of 1.00° to 4.00°, and the aforementioned organic group R has 1 to 30 carbon atoms.

The application provides a fused ring compound containing boron, nitrogen, sulfur atoms and a five-membered aromatic heterocycle, as shown in formula (I). Compared with the prior art, the application uses the fused ring compound containing boron, nitrogen, sulfur atoms and a five-membered aromatic heterocycle as a light-emitting material, which can realize the separation of HOMO and LUMO by using the resonance effect between boron atoms, nitrogen atoms and sulfur atoms, thereby realizing smaller ΔE ST and TADF effect, and meanwhile, the hybrid fused ring unit has a rigid skeleton structure, can reduce the relaxation degree of the excited state structure, thereby realizing a narrower half peak width; on the other hand, the five-membered aromatic heterocycle and different substituents can be introduced into the skeleton of the boron / nitrogen / sulfur hybrid fused ring unit, so that the lifetime and half peak width of the delayed fluorescence can be further adjusted.

Specific organometallic compounds of Formula I: Qx-Sn-(A1R1′z)4-x or Formula II: Sn(NR2(CH2)nA2)2 useful for the deposition of high purity tin oxide, as well as methods of using such compounds are disclosed. Also disclosed are compositions of organometallic compounds useful for the deposition of high purity tin oxide that in combination improve stability. Also disclosed are processes for dry etching tin oxide with a particular etchant gas and / or a process for dry etching a substrate using a particular etchant gas with a specific additive.

To provide a resist composition having high sensitivity and being able to form a pattern with a low exposure amount. A resist composition containing an organic tin compound and an organic boron compound represented by the following formula. (In the formula, R1, R2, and R3 each independently represent an organic group that bonds to boron by a carbon atom, an oxygen-containing organic group that bonds to boron by an oxygen atom, or OH. The oxygen-containing organic group may contain a boron atom. Two groups selected from the group consisting of R1, R2, and R3 may link to form a ring structure.)

The invention provides a kilogram-level preparation method of an organic photoelectric conjugated tin reagent, and belongs to the field of organic synthesis and organic photoelectric materials. The method comprises the following steps: in a dry 20L reaction device, dissolving a conjugated thiophene compound in tetrahydrofuran, keeping nitrogen positive pressure protection, dropwise adding a tetrahydrofuran solution of n-butyllithium and a tetrahydrofuran solution of trimethyltin chloride in a low-temperature reaction system, stirring for reaction, after the reaction is completed, standing for phase splitting, collecting an organic phase, drying, and concentrating filtrate to obtain the conjugated thiophene compound. And recrystallizing to obtain the organic photoelectric conjugated tin reagent. According to the method, efficient macro preparation of various conjugated tin reagents can be achieved, 1-1.2 kg of target products can be prepared through single-batch reaction, and the method has the advantages of being high in yield, easy and convenient to operate, low in cost, good in environmental friendliness and the like.

This invention provides a precursor solution, structure, and method for a novel type of photoresist that effectively absorbs radiation having a wavelength of 13.5 nm. [Solution] Patterning using UV and EUV light with organotin sulfide (and selenide) clusters is described. These clusters are solid at room temperature and soluble in organic solvents that are not highly polar. Irradiation can stabilize the irradiated material by either breaking the carbon-metallic bonds or crosslinking the unsaturated organic parts. The irradiated material then becomes resistant to dissolution in organic solvents, thereby allowing non-irradiated material to come into contact with the organic solvent and develop the latent image formed by the radiation. The radiation-patternable layer can be formed by coating or vapor deposition of a solution.

Provided are a heterocyclic compound represented by Formula 1 and an organic light-emitting device including the heterocyclic compound. The organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; an organic layer between the first electrode and the second electrode and including an emission layer; and at least one of the heterocyclic compound.

The present invention relates to a semiconductor photoresist composition comprising: an organometallic compound represented by chemical formula 1; and a solvent, and to a method for forming patterns using the composition. Details of chemical formula 1 are as defined in the specification.

The subject matter disclosed and claimed herein relates to Sn6-oxo clusters having mixed organic ligands and / or mixed carboxylate ligands, their synthesis, their formulations and their use in EUV lithography.

The invention discloses a preparation method and application of a photoresist composition containing an alkyl tin derivative. The alkyl tin derivative contains 2-8 tin atoms, adding a ligand into the tin source solution, uniformly mixing, and heating a tin-containing reaction system to generate the alkyl tin derivative; stopping heating, filtering and collecting a filter cake or performing rotary evaporation on reaction liquid to obtain solid powder. The product disclosed by the invention has relatively high etching resistance and extreme ultraviolet absorption capacity, has enough thermal stability, is suitable for the requirements of an extreme ultraviolet lithography processing technology, is simple in preparation process and is suitable for industrial application.

The invention discloses a catalyst for wastewater COD (Chemical Oxygen Demand) in-situ degradation and a preparation method of the catalyst, and belongs to the field of catalysts. A four-stage synergistic catalysis system of a metal phthalocyanine active matrix, a thiophene conjugated bridging chain, a cyclodextrin functional modification layer and a cross-linked network skeleton is adopted; the catalyst has the characteristics of controllable reaction path, designable product structure and efficient catalytic performance, a metal phthalocyanine compound matrix is used as a core active unit, a catalytic active center is formed through metal-nitrogen coordination, and a thienyl bridged ring structure is used as an electron transfer carrier, so that the catalytic activity of the catalyst is improved. A continuous electron channel for connecting a phthalocyanine active center and a cross-linked network is constructed through a conjugated system, electron migration is accelerated, a cyclodextrin functional modification layer serves as a performance optimization unit, and an adaptive bridge of the catalyst and a wastewater system is constructed through subject-object inclusion and hydrophilic modification, so that the performance of the catalyst is improved. Finally, a synergistic catalysis system with active center capable of efficiently generating active oxygen, conjugate bridging capable of guaranteeing electron transfer and cyclodextrin capable of optimizing application performance is formed.

Provided are: bis(alkylcyclopentadienyl)tin or bis(alkyltetramethylcyclopentadienyl)tin having a high vapor pressure even at lower temperatures, typified by bis(ethylcyclopentadienyl)tin; a precursor for chemical vapor deposition containing any of the above-mentioned organotin compounds as a main component; and a method of producing a tin-containing thin film by an atomic layer deposition process using the precursor for chemical vapor deposition. A precursor for chemical vapor deposition containing bis(alkylcyclopentadienyl)tin or bis(alkyltetramethylcyclopentadienyl)tin represented by the following Formula (1) as a main component: (In Formula (1), R1 and R2 each independently represent hydrogen or an alkyl group having 6 or less carbon atoms, and R3 and R4 each independently represent an alkyl group having 6 or less carbon atoms.)

A method for storing organotin compounds and an article that is particularly useful for maintaining the high purity of organotin compounds for semiconductor applications is described. The method for storing an organotin compound involves storing the organotin compound in a container and filling the headspace of the container with an inert gas, in which the container is a multilayer resin container containing, at least a light-shielding layer, a gas barrier layer, and an innermost layer, and the material constituting the innermost layer in contact with the organotin compound includes perfluoroalkoxyalkane, polytetrafluoroethylene, phenol resin, and / or ultra-high molecular weight polyethylene.

Provided are an organometallic compound useful for deposition of high purity tin oxide, and a composition containing the compound. 【Solution means】Formula II: Sn(NR 2 (CH2) n A 2 )2 (wherein A 2 is NR 2’ or O; R 2 group is H and an alkyl group and an aryl group having 1 to 10 carbon atoms; R 2’ group is H and an alkyl group or an acyl group and an aryl group having 1 to 10 carbon atoms; n is 2 or 3; optionally, NR 2 (CH2) n NR 2’ forms a cyclic structure) of an organometallic compound is provided.

The application discloses a kind of metal oxygen cluster materials and its room temperature rapid synthesis method and use, belong to crystal material preparation and micro-nano manufacturing technical field.The method with tin source and titanium source as metal precursor, polydentate alkoxide as ligand, in N,N-dimethylformamide solvent system of participation coordination, by stirring or shaking mode, under room temperature condition, induce metal precursor to occur hydrolysis, condensation and coordination reaction, so that metal-oxygen skeleton is completed in second level time Construction, metal oxygen cluster material is quickly generated.The method does not need heating or pressurization, reaction time is short, operation is simple, and the obtained metal oxygen cluster material is discrete molecular structure composed of metal-oxygen skeleton, with good structure stability and solution processing performance.The metal oxygen cluster material is used in the field of photolithography, and micro-nano pattern transfer can be realized.The method provides an effective way for the rapid preparation of metal oxygen cluster material and its application in micro-nano manufacturing.

This invention provides a fused-ring compound, an ultra-narrow bandgap organic semiconductor material, its preparation method, and its applications, belonging to the technical field of organic functional semiconductor materials. This invention provides a fused-ring compound having the structure shown in Formula I or Formula II, which is a carbon-oxygen bridged ladder-shaped fused-ring compound with alkyl side chains substituted (R2 is -H) or a carbon-oxygen bridged ladder-shaped fused-ring compound with alkyl side chains substituted and functionalized (R2 is a substituent other than -H). That is, the solubilizing side chain on the carbon-oxygen bridge is alkyl, which can serve as an electron-rich fused-ring donor unit to construct an ultra-narrow bandgap organic semiconductor material with strong near-infrared II absorption properties. This invention provides a method for preparing the fused-ring compound having the structure shown in Formula I or Formula II. The method provided by this invention is simple to operate and has a high product yield.

A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR′)3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR′2)3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R′ is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn—(NR′COR″)3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R′ and R″ are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.

The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precusors to form films.

Organometallic precursor solutions containing one or more phosphonate, such as methylphosphonic acid, tert-butylphosphonic acid, diethoxyalyllphosphonate, benzylphosphonic acid, and phenylphosphonic acid, are described. Corresponding methods for forming radiation patternable coatings as well as methods for forming a pattern using a solventless developing process are also described. The incorporation of a phosphonate into an organometallic photoresist composition, such as an organotin photoresist composition, is described as a way to increase stability of organometallic precursor solutions, to improve the homogeneity of organometallic photoresist films, and / or to improve the patterning performance of organometallic photoresist coatings.

The present disclosure includes the preparation of mixed-ligand compounds, such as tin(II) cyclopentadienylide complexes. The compounds of the present disclosure can be used as atomic layer deposition (ALD) precursors for extreme ultraviolet (EUV) lithography. The compounds of the present disclosure can also be used as plasma chemical vapor deposition (CVD) precursors for EUV lithography.

A semiconductor photoresist composition includes an organometallic compound; a linear carboxylic acid compound including at least one carboxyl group; a cyclic carboxylic acid compound represented by Chemical Formula 1; and a solvent. The details of Chemical Formula 1 are as described in the specification. A method of forming patterns utilizes the semiconductor photoresist composition.

The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and / or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.

Organotin compositions having the formula RSnL3 and corresponding synthetic methods are described. R includes aromatic, cyclic and / or halogenated ether moieties, or polyethers, and L includes hydrolysable groups. The organotin compositions may be formed as radiation-patternable coatings on substrates. The coatings may have an average thickness from about 1 nm to about 75 nm and have the formula RSnOn(OH)3-2n, forming an oxo- hydroxo network, where R is a hydrocarbyl ether group with 1 to 30 carbon atoms and 0<n<3 / 2, wherein regions of the coating are soluble in 2-heptanone in a puddle development step following a bake at 150 °C tor 120 seconds. The coatings may be radiation-patternable using UV, EUV or ion beam radiation, and corresponding methods are described.

The present invention relates to a process for the synthesis of stannous alkoxides. Some embodiments of the methods include contacting a stannous halide with a metal alkoxide to form a stannous alkoxide. Some embodiments of the methods include contacting an aminated tin compound with an alcohol compound to form a stannous alkoxide. Some embodiments of the methods include contacting a stannous halide with at least 3 equivalents of a metal alkoxide to form a tin compound. Some embodiments of the methods include contacting a stannous halide with an alcohol compound and a co-reactant base to form a stannous alkoxide.