250results about "Tin organic compounds" patented technology

A semiconductor photoresist composition and a method of forming or providing patterns using the semiconductor photoresist composition are disclosed. The semiconductor photoresist composition may include a first organometallic compound represented by Chemical Formula 1, a second organometallic compound represented by Chemical Formula 2, and a solvent.

A light-receiving device in which an increase in driving voltage is inhibited is provided. Any of the following light-receiving devices is provided: a light-receiving device that includes a light-receiving layer between a pair of electrodes and in which the light-receiving layer includes an active layer, a buffer layer, and an electron-transport layer, the buffer layer is between the active layer and the electron-transport layer and is in contact with the active layer, and the buffer layer includes an organic compound having an electron-withdrawing group; a light-receiving device that includes a light-receiving layer between a pair of electrodes and in which the light-receiving layer includes an active layer, a buffer layer, and an electron-transport layer, the buffer layer is between the active layer and the electron-transport layer and is in contact with the active layer, and the buffer layer includes a heteroaromatic compound having an electron-withdrawing group.

Synthesis reactions are described to efficiently and specifically form compounds of the structure RSnL3, where R is an organic ligand to the tin, and L is hydrolysable ligand or a hydrolysis product thereof. The synthesis is effective for a broad range of R ligands. The synthesis is based on the use of alkali metal ions and optionally alkaline earth (pseudo-alkaline earth) metal ions. Compounds are formed of the structures represented by the formulas RSn(C≡CSiR′3)3, R′R″ACSnL3, where A is a halogen atom (F, Cl, Br or I) or an aromatic ring with at least one halogen substituent, R′R″(R″′O)CSnL3 or R′R″(N≡C)CSnZ3.

Provided are an organometallic compound represented by Formula 1, a resist composition including the same, and a pattern formation method using the resist composition,M11(Rx)n(Ry)(m-n),  Formula 1wherein reference should be made to the specification for the descriptions of M11, Rx, Ry, n and m in Formula 1.

A pattern formation method may use a resist composition. The resist composition may include an organometallic compound represented by any one of Formulae 1-1 to 1-4, an additive represented by Formula 2, and a solvent. The solvent may include a non-polar solvent, a polar aprotic solvent, or a combination thereof.Refer to the specification for the descriptions of M11, L11 to L14, a11 to a14, R11 to R14, b11 to b14, Y11 to Y13, X11 to X13, Y21, Y22, L21, and a21 in Formulae 1-1 to 1-4 and 2.

A high-purity tin composition that can maintain high purity for a long time, in which decomposition of a triaminotin compound is suppressed and high purity of the triaminotin compound is maintained, is provided. The tin composition contains 95 mol % or more of a triaminotin compound having formula (1) in terms of tin atoms, and 0.001 to 0.5 mol % of a tetraaminotin compound having formula (2) in terms of tin atoms:R is a hydrocarbon group having 1 to 30 carbon atoms which is optionally substituted with a halogen, an oxygen atom, or a nitrogen atom, and R's are each a hydrocarbon group having 1 to 10 carbon atoms and may be identical or different from each other; two R's on the same nitrogen atom may be bonded to each other to form a 3- to 7-membered ring containing nitrogen.

The invention provides a patterning composition, a compound, a patterning method, an electronic device and application. The patterning composition includes a compound represented by the following formula: (RaM) b (L1) x (L2) y (L3) z. The patterning composition comprises the metal organic compound coordinated by the specific mixed ligand, so that in the patterning process, the structure can obviously improve the hydrolytic stability of the patterning composition during the patterning process, and the exposure dose is reduced.

This disclosure provides systems and methods for purifying precursor compounds. One method includes one or more of the following steps: mixing a crude product solution with a first solvent, wherein the crude product solution comprises a precursor compound and at least one impurity; wherein the boiling point of the first solvent is higher than the boiling point of the crude product solution; feeding at least the mixture of the crude product solution and the first solvent into an evaporator; and collecting a distillate comprising the precursor compound from the evaporator, wherein the purity of the precursor compound in the distillate is greater than 95%, as determined by [further steps]. 1 Determined by H NMR. Other methods and systems are presented in this paper.

Provided are a resist composition and a pattern forming method using the same. 【Solution means】A resist composition containing an organometallic compound represented by the following chemical formula 1 and an additive represented by the following chemical formula 2, and a pattern forming method using the same: M 11 (R x ) n (R y ) (m-n) [Chemical formula 1] (X2) c2 -(L2) a2 -[Y2-Z2] b2 [Chemical formula 2] In the above chemical formulas 1 and 2, for the explanations of M 11 , R x , R y , n, m, X2, Y2, Z2, L2, a2, b2 and c2, refer to the specification.

Provided is a tin compound that is a high-performance resist material capable of having high purity and uniform solubility. A tin compound having a tin atom, an organic group R, and an oxygen ligand and / or a hydroxyl ligand, wherein the diffraction angle 2θ (°) of the peak of the maximum intensity in X-ray diffraction measurement is present in the range of 5.00° to 15.00°, the half-value width of the peak of the maximum intensity is in the range of 1.00° to 4.00°, and the aforementioned organic group R has 1 to 30 carbon atoms.

The invention provides a two-dimensional chalcogenide, which is a crystalline material, and has a chemical formula of (NH4)2[Sn3S7]·(C4H13N3)1.41, cell parameters of a=b=13.2307(10) Å, c=19.335(2) Å, α=β=90°, and γ=120°, and space group of P63 / mmc. The invention further provides a method for preparing the two-dimensional chalcogenide and use thereof in the adsorption of iodine vapor. The two-dimensional chalcogenide of the present invention is capable of removing iodine vapor of various concentrations (as low as 400 ppm) over a wide range of temperatures (25° C.-75° C.), without desorption of iodine after standing for a long time.

An article containing an organic tin compound in an industrially usable container is provided, in which the container is sealable, and the part of the container in contact with the organic tin compound is made of stainless steel with a specific surface structure that has been electrolytically polished. This article makes it possible to store organic tin compounds with high reactivity while maintaining their purity for a long period of time.

The application provides a fused ring compound containing boron, nitrogen, sulfur atoms and a five-membered aromatic heterocycle, as shown in formula (I). Compared with the prior art, the application uses the fused ring compound containing boron, nitrogen, sulfur atoms and a five-membered aromatic heterocycle as a light-emitting material, which can realize the separation of HOMO and LUMO by using the resonance effect between boron atoms, nitrogen atoms and sulfur atoms, thereby realizing smaller ΔE ST and TADF effect, and meanwhile, the hybrid fused ring unit has a rigid skeleton structure, can reduce the relaxation degree of the excited state structure, thereby realizing a narrower half peak width; on the other hand, the five-membered aromatic heterocycle and different substituents can be introduced into the skeleton of the boron / nitrogen / sulfur hybrid fused ring unit, so that the lifetime and half peak width of the delayed fluorescence can be further adjusted.

Specific organometallic compounds of Formula I: Qx-Sn-(A1R1′z)4-x or Formula II: Sn(NR2(CH2)nA2)2 useful for the deposition of high purity tin oxide, as well as methods of using such compounds are disclosed. Also disclosed are compositions of organometallic compounds useful for the deposition of high purity tin oxide that in combination improve stability. Also disclosed are processes for dry etching tin oxide with a particular etchant gas and / or a process for dry etching a substrate using a particular etchant gas with a specific additive.

To provide a resist composition having high sensitivity and being able to form a pattern with a low exposure amount. A resist composition containing an organic tin compound and an organic boron compound represented by the following formula. (In the formula, R1, R2, and R3 each independently represent an organic group that bonds to boron by a carbon atom, an oxygen-containing organic group that bonds to boron by an oxygen atom, or OH. The oxygen-containing organic group may contain a boron atom. Two groups selected from the group consisting of R1, R2, and R3 may link to form a ring structure.)

A method for storing organotin compounds and an article that is particularly useful for maintaining the high purity of organotin compounds for semiconductor applications is described. The method for storing an organotin compound involves storing the organotin compound in a container and filling the headspace of the container with an inert gas, in which the container is a multilayer resin container containing, at least a light-shielding layer, a gas barrier layer, and an innermost layer, and the material constituting the innermost layer in contact with the organotin compound includes perfluoroalkoxyalkane, polytetrafluoroethylene, phenol resin, and / or ultra-high molecular weight polyethylene.

The invention provides a kilogram-level preparation method of an organic photoelectric conjugated tin reagent, and belongs to the field of organic synthesis and organic photoelectric materials. The method comprises the following steps: in a dry 20L reaction device, dissolving a conjugated thiophene compound in tetrahydrofuran, keeping nitrogen positive pressure protection, dropwise adding a tetrahydrofuran solution of n-butyllithium and a tetrahydrofuran solution of trimethyltin chloride in a low-temperature reaction system, stirring for reaction, after the reaction is completed, standing for phase splitting, collecting an organic phase, drying, and concentrating filtrate to obtain the conjugated thiophene compound. And recrystallizing to obtain the organic photoelectric conjugated tin reagent. According to the method, efficient macro preparation of various conjugated tin reagents can be achieved, 1-1.2 kg of target products can be prepared through single-batch reaction, and the method has the advantages of being high in yield, easy and convenient to operate, low in cost, good in environmental friendliness and the like.

This invention provides a precursor solution, structure, and method for a novel type of photoresist that effectively absorbs radiation having a wavelength of 13.5 nm. [Solution] Patterning using UV and EUV light with organotin sulfide (and selenide) clusters is described. These clusters are solid at room temperature and soluble in organic solvents that are not highly polar. Irradiation can stabilize the irradiated material by either breaking the carbon-metallic bonds or crosslinking the unsaturated organic parts. The irradiated material then becomes resistant to dissolution in organic solvents, thereby allowing non-irradiated material to come into contact with the organic solvent and develop the latent image formed by the radiation. The radiation-patternable layer can be formed by coating or vapor deposition of a solution.

Photoactive materials comprising organic-inorganic hybrid halide perovskite compounds are provided. Photovoltaic cells and light-emitting devices incorporating the photoactive materials into their light-absorbing and light-emitting layers, respectively, are also provided. The halide perovskites have an amAMX3 perovskite crystal structure, wherein am is an alkyl diamine cation, an aromatic diamine cation, an aromatic azole cation, a cyclic alkyl diamine cation or a hydrazinediium cation; A is a monovalent alkylammonium cation or an alkali metal cation; X is a halide ion or a combination of halide ions; and M is an octahedrally coordinated bivalent metal atom.

Provided is an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides the organotin compounds in a highly pure crystalline form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

Provided are a heterocyclic compound represented by Formula 1 and an organic light-emitting device including the heterocyclic compound. The organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; an organic layer between the first electrode and the second electrode and including an emission layer; and at least one of the heterocyclic compound.

The present invention relates to a semiconductor photoresist composition comprising: an organometallic compound represented by chemical formula 1; and a solvent, and to a method for forming patterns using the composition. Details of chemical formula 1 are as defined in the specification.

The subject matter disclosed and claimed herein relates to Sn6-oxo clusters having mixed organic ligands and / or mixed carboxylate ligands, their synthesis, their formulations and their use in EUV lithography.

The invention discloses a preparation method and application of a photoresist composition containing an alkyl tin derivative. The alkyl tin derivative contains 2-8 tin atoms, adding a ligand into the tin source solution, uniformly mixing, and heating a tin-containing reaction system to generate the alkyl tin derivative; stopping heating, filtering and collecting a filter cake or performing rotary evaporation on reaction liquid to obtain solid powder. The product disclosed by the invention has relatively high etching resistance and extreme ultraviolet absorption capacity, has enough thermal stability, is suitable for the requirements of an extreme ultraviolet lithography processing technology, is simple in preparation process and is suitable for industrial application.

The invention discloses a catalyst for wastewater COD (Chemical Oxygen Demand) in-situ degradation and a preparation method of the catalyst, and belongs to the field of catalysts. A four-stage synergistic catalysis system of a metal phthalocyanine active matrix, a thiophene conjugated bridging chain, a cyclodextrin functional modification layer and a cross-linked network skeleton is adopted; the catalyst has the characteristics of controllable reaction path, designable product structure and efficient catalytic performance, a metal phthalocyanine compound matrix is used as a core active unit, a catalytic active center is formed through metal-nitrogen coordination, and a thienyl bridged ring structure is used as an electron transfer carrier, so that the catalytic activity of the catalyst is improved. A continuous electron channel for connecting a phthalocyanine active center and a cross-linked network is constructed through a conjugated system, electron migration is accelerated, a cyclodextrin functional modification layer serves as a performance optimization unit, and an adaptive bridge of the catalyst and a wastewater system is constructed through subject-object inclusion and hydrophilic modification, so that the performance of the catalyst is improved. Finally, a synergistic catalysis system with active center capable of efficiently generating active oxygen, conjugate bridging capable of guaranteeing electron transfer and cyclodextrin capable of optimizing application performance is formed.

Provided are: bis(alkylcyclopentadienyl)tin or bis(alkyltetramethylcyclopentadienyl)tin having a high vapor pressure even at lower temperatures, typified by bis(ethylcyclopentadienyl)tin; a precursor for chemical vapor deposition containing any of the above-mentioned organotin compounds as a main component; and a method of producing a tin-containing thin film by an atomic layer deposition process using the precursor for chemical vapor deposition. A precursor for chemical vapor deposition containing bis(alkylcyclopentadienyl)tin or bis(alkyltetramethylcyclopentadienyl)tin represented by the following Formula (1) as a main component: (In Formula (1), R1 and R2 each independently represent hydrogen or an alkyl group having 6 or less carbon atoms, and R3 and R4 each independently represent an alkyl group having 6 or less carbon atoms.)

A method for storing organotin compounds and an article that is particularly useful for maintaining the high purity of organotin compounds for semiconductor applications is described. The method for storing an organotin compound involves storing the organotin compound in a container and filling the headspace of the container with an inert gas, in which the container is a multilayer resin container containing, at least a light-shielding layer, a gas barrier layer, and an innermost layer, and the material constituting the innermost layer in contact with the organotin compound includes perfluoroalkoxyalkane, polytetrafluoroethylene, phenol resin, and / or ultra-high molecular weight polyethylene.

Organotin compounds bearing cyclopentadienyl, sulfur, selenium, or tellurium as photoresists, and / or precursors for photolithography patterning, or thermoelectric materials, are described, particularly for extreme ultraviolet radiation (EUV), wherein cyclopentadienyl comprises cyclopentadienyl C5H5 group, or substituted cyclopentadienyl C5H3R, CH2R2, C5HR3, C5R4, or C5R5 group with hapticity of η1, η2, η3, η4, or η5 of isomers.

Provided are an organometallic compound useful for deposition of high purity tin oxide, and a composition containing the compound. 【Solution means】Formula II: Sn(NR 2 (CH2) n A 2 )2 (wherein A 2 is NR 2’ or O; R 2 group is H and an alkyl group and an aryl group having 1 to 10 carbon atoms; R 2’ group is H and an alkyl group or an acyl group and an aryl group having 1 to 10 carbon atoms; n is 2 or 3; optionally, NR 2 (CH2) n NR 2’ forms a cyclic structure) of an organometallic compound is provided.

The application discloses a kind of metal oxygen cluster materials and its room temperature rapid synthesis method and use, belong to crystal material preparation and micro-nano manufacturing technical field.The method with tin source and titanium source as metal precursor, polydentate alkoxide as ligand, in N,N-dimethylformamide solvent system of participation coordination, by stirring or shaking mode, under room temperature condition, induce metal precursor to occur hydrolysis, condensation and coordination reaction, so that metal-oxygen skeleton is completed in second level time Construction, metal oxygen cluster material is quickly generated.The method does not need heating or pressurization, reaction time is short, operation is simple, and the obtained metal oxygen cluster material is discrete molecular structure composed of metal-oxygen skeleton, with good structure stability and solution processing performance.The metal oxygen cluster material is used in the field of photolithography, and micro-nano pattern transfer can be realized.The method provides an effective way for the rapid preparation of metal oxygen cluster material and its application in micro-nano manufacturing.