191 results about "Boron atom" patented technology

The invention belongs to the technical field of OLEDs, and provides a polycyclic compound containing triphenyl silicon and a polyalkyl substituent group and an organic electroluminescent device containing the polycyclic compound. The structural general formula of the polycyclic compound is as shown in formula I in the specification. Benzofuran with higher electronegativity is introduced to a ring structure composed of nitrogen atoms and boron atoms, triphenyl silicon is introduced to the para-position of boron, and the synergistic effect of benzofuran and triphenyl silicon can significantly enhance the multiple resonance of a light-emitting core and reduce vibration relaxation. Due to simultaneous use of the benzofuran and the triphenyl silicon, the problems of vibration relaxation increase, spectrum widening and the like caused by introduction of the polyalkyl substituent are remarkably improved, the luminous efficiency of the material is remarkably improved, and the color purity is improved, so that the requirement of BT.2020 wide color gamut display standard on a luminescent spectrum is met. I

The invention belongs to the technical field of organic light-emitting materials, and relates to a boron-containing polycyclic compound for an organic light-emitting material. According to the invention, aryl or heteroaryl is taken as a center, 2-3 boron atoms are introduced and form covalent bonds with atoms such as N, O, S and Se, and a rigid polycyclic compound is constructed. The compound provided by the invention is a boron-containing polycyclic compound with multiple resonance effects, can realize narrow-spectrum and high-color-purity luminescence, also has efficient TADF characteristics, and significantly improves the performance of OLED devices. Compared with the prior art, the compound has remarkable advantages in the aspects of molecular structure design, photoelectric property regulation and control, application range and the like, provides important technical support for development of new-generation high-performance OLED materials, and has wide market prospects and application potential.

The invention relates to the technical field of solar cells, and particularly discloses a high-boron-doped single-mask TBC solar cell structure and a manufacturing method thereof.In the process of forming a patterned region, a P region does not need a mask structure, and through the combination of boron diffusion doping, annealing and two-time laser doping treatment, the high-boron-doped single-mask TBC solar cell structure is obtained. The boron atom doping concentration of the polycrystalline silicon layer is greatly improved, so that the boron-doped polycrystalline silicon layer in the P region is high in doping concentration and uniform in doping. According to the TBC solar cell prepared by the method, the processes of preparing and removing the mask structure are simplified, the technological process is short, the manufacturing cost is low, the contact resistance is reduced, the passivation effect is improved, the filling factor of the cell is increased, and the efficiency of the cell is improved. And the open-circuit voltage and the photoelectric conversion efficiency of the battery are improved.

The invention discloses a boron diffusion method of a solar cell and the solar cell. The boron diffusion method comprises the following steps: forming a boron-doped layer for a cell substrate in an oxidation furnace tube to obtain a primarily-doped boron substrate, the boron-doped layer comprising a deep-junction boron diffusion layer and a borosilicate glass layer which are laminated from inside to outside; taking out the primarily-doped boron matrix from the oxidation furnace tube, and cooling the primarily-doped boron matrix until the cooled temperature is not higher than 200 DEG C; putting the cooled primarily-doped boron substrate into the preheated oxidation furnace tube again, and heating the primarily-doped boron substrate in an oxygen-free environment to activate non-active boron atoms in the boron-doped layer; and carrying out oxidation source absorption treatment on the deep-junction boron diffusion layer in the primarily-doped boron substrate, and redistributing boron atoms in the deep-junction boron diffusion layer. According to the boron diffusion method, the amount of active boron atoms contained in the surface of the deep-junction boron diffusion layer of the solar cell is increased, the boron doping concentration peak value in the deep-junction boron diffusion layer is reduced, the boron doping concentration distribution is relatively uniform, and the contact resistance between the metal electrode and the deep-junction boron diffusion layer is reduced.

The invention discloses a passivation method of a boron and phosphorus doped Poly layer, a passivation contact structure of the boron and phosphorus doped Poly layer and a battery. The passivation method comprises the following steps: firstly, growing a tunneling oxide layer with two thin and compact sides and a thick and loose middle on the surface of a silicon wafer by adopting a mode of combining low-temperature low-pressure oxidation, high-temperature normal-pressure oxidation and low-temperature normal-pressure oxidation, and then carrying out deposition and oxidation propulsion of boron atoms and / or phosphorus atoms by adopting a high-temperature diffusion tube, so that boron and phosphorus with a certain concentration are doped in a Poly silicon layer. According to the invention, through superposition of the oxide layers with different compactness, the overall thickness of the tunneling oxide layer is improved, so that the structure of the tunneling oxide layer is not obviously damaged in the subsequent boron and phosphorus diffusion process, and the passivation effect of the boron and phosphorus doped Poly layer is obviously improved. According to the passivation method disclosed by the invention, Poly silicon layers and doped polycrystalline silicon layers with different thicknesses can be obtained, and the passivation method can be applied to all batteries needing to use boron Poly and phosphorus Poly.

The invention provides a red light and infrared light-emitting compound based on a boron-nitrogen fused ring and application thereof. The invention provides a boron-nitrogen polycyclic aromatic hydrocarbon material of a fused naphthalene ring, and a specific strong electron withdrawing group is introduced to a boron atom para-position. Compared with a compound disclosed in the prior art, the compound provided by the invention introduces a strong electron withdrawing group to a boron atom para-position of boron-nitrogen polycyclic aromatic hydrocarbon of a fused naphthalene ring, so that the emission spectrum of the material can be subjected to significant red shift (red shift from a yellow light band to a red light band and even an infrared band), and red light and even infrared light emission with high luminous efficiency and a narrow band can be realized. An electroluminescent device prepared from the compound provided by the invention shows relatively high luminescent color purity and relatively excellent luminous efficiency, and can meet the requirements of current enterprise production on high-performance luminescent materials.

The embodiment of the invention discloses a composite shielding plate and a preparation method thereof, and the composite shielding plate comprises a cladding which is provided with an accommodation space, and the accommodation space is in a vacuum state; the shielding material is arranged in the accommodating space; wherein the shielding material comprises a neutron moderation base material, and the cladding is made of a boron-containing metal material; or the shielding material comprises a neutron moderation base material and a neutron absorption base material, the cladding is made of a metal material, the neutron moderation base material comprises rare earth hydride, and the neutron absorption base material comprises boron-containing ceramic. The composite shielding plate provided by the embodiment of the invention not only comprises the neutron moderation base material which is high in hydrogen content and excellent in temperature resistance so as to effectively moderate fast neutrons, but also is combined with the neutron absorption base material containing boron atoms so as to efficiently absorb thermal neutrons, so that the complete neutron moderation-absorption integrated shielding performance of the composite shielding plate is realized; and stable shielding performance can be provided at the temperature of 300-1000 DEG C.

The invention relates to the technical field of compound preparation and medicine, in particular to a boron atom-labeled compound for targeting fibroblast activating protein as well as a preparation method and application of the boron atom-labeled compound. The preparation method comprises the following steps: carrying out acid amine condensation on (4-(((2, 5-dioxopyrrolidine-1-yl) oxy) carbonyl) phenyl) boric acid and an FAP targeting ligand to obtain a boron atom-labeled compound targeting the fibroblast activating protein; and the FAP targeting ligand is FAPI-46 or FAP-2286 (Fibroblast Amplified Polymorphism). The compound is easy to prepare, high in purity and good in stability, the content of boron atoms in tumor tissue can be greatly increased, and a treatment basis is provided for boron neutron capture therapy.

The embodiment of the invention provides an N-type TOPCon battery and a preparation method thereof, and in the preparation method of the N-type TOPCon battery provided by the embodiment of the invention, after boron diffusion and laser doping, a silicon wafer is oxidized by adopting mixed gas of oxygen and water vapor, so that the oxidation rate is increased, the process temperature can be effectively reduced, the process time can be effectively shortened, and the production efficiency of the N-type TOPCon battery is improved. The doping concentration of boron atoms on the surface of the silicon wafer is remarkably reduced, impurity recombination is reduced, the open voltage of the cell is improved, the boron atom doping junction depth can be reduced, the short-wave light response in sunlight is improved, and the current is improved; in addition, the reduction of the oxidation temperature also reduces the generation of silicon substrate and boron-oxygen defect compound pairs, and reduces the blackening defect of concentric rings.

Provided is an organic photocatalyst that includes a compound represented by formula (1). The organic photocatalyst can use visible light from a blue LED or the like as a light source, has excellent stability under photoirradiation, can be recycled without losing catalytic activity, and can be used for large-scale synthesis. (In formula (1), R1–R11 are each independently a hydrogen atom, an alkyl group, an aryl group, an alkoxy group, an aryloxy group, an amino group, a heterocyclic aromatic group, or a halogen atom (excluding R1, R6, and R9 being a hydrogen atom), R1 and R2, R2 and R3, R3 and R4, R4 and R5, R5 and R6, R6 and R7, R8 and R9, or R9 and R10 may form a ring structure, X is a nitrogen atom or a boron atom, and Y and Z are each independently a sulfur atom, an oxygen atom or -NR12- (R12 being an alkyl group or an aryl group).)

The invention discloses a boron doping method, a boron doping structure and a back contact battery. The method comprises the following steps: step 1) pre-crystallization treatment; step 2) pre-oxidation; (3) boron diffusion; wherein the pre-crystallization treatment is to treat the amorphous silicon layer in the silicon wafer base material in a gradient variable pressure mode in an inert gas atmosphere. According to the method, before pre-oxidation and boron diffusion, amorphous silicon is converted into microcrystalline silicon in a gradient transformation manner, and gradual crystallization is realized, so that lattice stress is reduced, gradient distribution of grain sizes can be realized, the problem of uneven grain sizes caused by a single crystallization condition and the problem of doping concentration fluctuation caused by an unordered structure of the amorphous silicon are avoided, and the yield of the amorphous silicon is improved. According to the method, the boron atoms can be transferred to a balance position more easily, an ordered structure is formed, the distribution is more uniform, the boron-doped structure with better sheet resistance uniformity is obtained, and the photoelectric conversion efficiency of the back contact battery based on the boron-doped structure is further improved.

The invention discloses a solar cell boron emitter and a preparation method and application thereof, and belongs to the field of solar cells, after a monocrystalline silicon wafer is selected, cleaned and textured, a first BSG layer, a silicon oxide mask layer and a second BSG layer are sequentially deposited on the front surface of the silicon wafer, and then annealing treatment is carried out; wherein the boron atom concentration of the first BSG layer is lower than that of the second BSG layer, and the oxygen atom concentration of the first BSG layer is higher than that of the second BSG layer. The BSG layer with low-concentration boron atoms and high-concentration oxygen atoms, the silicon oxide mask layer and the BSG layer with high-concentration boron atoms and low-concentration oxygen atoms are sequentially deposited on the silicon wafer, and after annealing treatment, the surface of the formed boron emitter has high boron doping concentration and can be in better contact with a metal electrode; and meanwhile, the junction depth of the boron emitter is relatively shallow, defects caused by internal boron doping can be repaired due to existence of high-concentration oxygen atoms, and compounding of a silicon substrate is reduced.

The invention provides a boron diffusion method of a TBC battery, a preparation method of the TBC battery and the TBC battery, and relates to the technical field of photovoltaic batteries. The boron diffusion method of the TBC battery comprises the following steps: sequentially carrying out gradient heating pre-oxidation and intermittent oxygen introduction boron diffusion on the back surface of a silicon substrate to obtain a silicon substrate with a BSG layer; wherein the gradient heating pre-oxidation comprises at least five stages of heat preservation pre-oxidation, and the temperature rise amplitude of every two adjacent stages is 5-15 DEG C. According to the boron diffusion method, a compact layered pre-oxidation layer is formed by setting gradient temperature rise before boron diffusion deposition, and intermittent oxygen diffusion is set during boron diffusion deposition, so that rapid diffusion of boron atoms is blocked, interface boron accumulation is inhibited, the BRL concentration is reduced, Auger recombination is reduced, the open voltage is improved, and the cell conversion efficiency is improved.

The invention relates to the technical field of hard alloys, and particularly discloses a ruthenium boride reinforced ultra-ultra coarse grain WC-Co hard alloy and a preparation method thereof in order to solve the problems of low strength and hardness and poor toughness of an ultra-ultra coarse grain alloy product caused by difficult control of grain size in an existing ultra-ultra coarse grain alloy preparation process. The ultra-coarse grain WC-Co hard alloy comprises the following raw materials: 0.5-5% of ruthenium-boron mixed powder, 5-10% of cobalt powder and the balance of tungsten carbide particles. Wherein the number ratio of ruthenium atoms to boron atoms in the ruthenium-boron mixed powder is 1: (0.5-1.5), and the carbon adjusting range of the total mass of tungsten and carbon in the tungsten carbide particles is 6.08-6.20 wt%. The problems that WC particles are excessively crushed and Co phases are non-uniformly distributed are solved by utilizing high-energy stirring dry mixing without adding a grinding body and combining a flexible wet grinding process with extremely short time and extremely low ball-to-material ratio, and Ru powder and B powder are introduced and combined with a special sintering process, so that the effects of high toughness, high hardness, high heat conductivity and the like of the ultra-coarse grain alloy are achieved.

The present invention relates to the field of catalyst technology, and discloses a hydrogen-type boron-containing EU-1 molecular sieve and a preparation method thereof, a C8 aromatic hydrocarbon isomerization catalyst and a preparation method and application thereof. The molecular sieve contains metal cations, and the metal cations are alkali metal cations with an atomic number ≮19 and / or alkaline earth metal cations with an atomic number ≮19; in the hydrogen-type boron-containing EU-1 molecular sieve, the ratio of the molar amount of the metal cations, the molar amount of silicon atoms, and the sum of the molar amounts of boron atoms and aluminum atoms is 0.05-0.7:10-100:1, and the molar ratio of the boron atoms to the aluminum atoms is 0.1-1.5:1. The C8 aromatic hydrocarbon isomerization catalyst provided by the present invention is used for catalyzing the isomerization reaction of C8 aromatic hydrocarbons, and can improve the yield of C8 aromatic hydrocarbons while maintaining a high isomerization activity.

An organic electroluminescence device may include: an anode; a cathode; and an emitting layer disposed between the anode and the cathode. The emitting layer may include a delayed fluorescent compound M2, a compound M3 including a deuterium atom, and a fluorescent compound M1. The compound M1 may include a boron atom. The compound M3 does not have a partial structure of formula (1C) or (2C):Y41 to Y48 each independently being N, CR, or C bonded to another atom or another structure, at least one of Y41 to Y48 being N, at least one of Y41 to Y48 being C bonded to another atom or another structure, each R independently being H or a substituent. The singlet energy S1(M2) of the compound M2 and a singlet energy S1(M3) of the compound M3 may satisfy a relationship of a formula (1):S1(M3)>S1(M2)  (1).

The invention discloses a boron-doped cobalt-based non-noble metal fuel cell oxygen reduction catalyst and a preparation method thereof, boron atoms are introduced into a Co center coordination environment to adjust the adsorption energy of active center oxygen species, and the intrinsic activity of the catalyst is improved; meanwhile, more internal active sites are exposed under the etching effect caused by decomposition of the uniformly dispersed boron source in the heat treatment process, so that the relatively high active center utilization rate is ensured; the preparation method disclosed by the invention is simple, low in cost and good in reproducibility, and the cobalt-based catalyst prepared on the basis of the method is higher in catalytic activity and better in stability compared with a leading non-noble metal catalyst.

This invention discloses a silicon-based high electron mobility transistor and its fabrication method, relating to the field of semiconductor process technology. The silicon-based high electron mobility transistor includes: a substrate; an AlN nucleation layer, a high-resistivity buffer layer, a channel layer, an AlN insertion layer, an AlGaN barrier layer, and a GaN capping layer sequentially disposed on the substrate; wherein the AlN nucleation layer includes a roughened first high-temperature AlN nucleation layer and a second high-temperature AlN nucleation layer, with the first high-temperature AlN nucleation layer disposed on the substrate. The first high-temperature AlN nucleation layer effectively blocks impurities in the substrate. Surface roughening of the first high-temperature AlN nucleation layer releases stress between the substrate and the epitaxial layer. The second high-temperature AlN nucleation layer is disposed on the roughened first high-temperature AlN nucleation layer to further release the stress accumulated in the first high-temperature AlN nucleation layer. This invention solves the technical problem in the prior art where boron atoms diffuse from the silicon substrate to the epitaxial layer, resulting in significant stress between the silicon substrate and the epitaxial layer, leading to a decrease in the crystal quality of the epitaxial layer.

The utility model provides a reaction furnace and processing equipment, relates to the field of semiconductor or photovoltaic material processing, and solves the technical problem that boron atoms cannot be doped into silicon wafers due to gas leakage of the reaction furnace. The reaction furnace comprises a furnace tube assembly, wherein a first opening of the furnace tube assembly is communicated with a reaction cavity; the first flange assembly is connected with the end, provided with the first opening, of the furnace tube assembly, the first flange assembly is provided with a first gas channel and a second opening, and protective gas can pass through the first gas channel to form a gas curtain at the first opening; the second flange assembly is connected with the first flange assembly, and the second flange assembly is provided with a second gas channel and a third opening; and the furnace door can be connected with the second flange assembly and is configured to seal the third opening. By means of the structure, when the furnace tube assembly leaks, protective gas can be introduced into the first gas channel, the protective gas can form a protective gas layer, and oxygen molecules are prevented from making contact with a product.

The invention provides a semiconductor manufacturing method, which comprises providing a substrate, forming a silicon germanium epitaxial layer in the substrate, forming a first silicon layer on the silicon germanium epitaxial layer, wherein the first silicon layer is a pure silicon layer, and forming a second silicon layer on the first silicon layer, wherein the second silicon layer comprises a silicon layer doped with boron atoms.

Provided is a synthetic single crystal diamond containing conjugants each composed of one vacancy and one boron atom, wherein the concentration of boron atoms based on atom numbers is 0.1 ppm or more and 100 ppm or less.

The present invention relates to the field of photoelectrocatalytic technology, and specifically provides a diamond-based photoanode, a preparation method thereof, and a photoelectrocatalytic device. The diamond-based photoanode includes a substrate, a boron-doped diamond film layer, and an n-type semiconductor film layer that are sequentially stacked; in the boron-doped diamond film layer, the ratio of boron atoms to carbon atoms is between 200 ppm and 9000 ppm; the n-type semiconductor film layer has a porous structure so that a part of the surface of the boron-doped diamond film layer facing away from the substrate is exposed, and the band gap width of the n-type semiconductor film layer is less than 2.5 eV. The diamond-based photoanode provided by the present invention has relatively excellent photoelectrocatalytic properties.

The application provides a fused ring compound containing boron, nitrogen, sulfur atoms and a five-membered aromatic heterocycle, as shown in formula (I). Compared with the prior art, the application uses the fused ring compound containing boron, nitrogen, sulfur atoms and a five-membered aromatic heterocycle as a light-emitting material, which can realize the separation of HOMO and LUMO by using the resonance effect between boron atoms, nitrogen atoms and sulfur atoms, thereby realizing smaller ΔE ST and TADF effect, and meanwhile, the hybrid fused ring unit has a rigid skeleton structure, can reduce the relaxation degree of the excited state structure, thereby realizing a narrower half peak width; on the other hand, the five-membered aromatic heterocycle and different substituents can be introduced into the skeleton of the boron / nitrogen / sulfur hybrid fused ring unit, so that the lifetime and half peak width of the delayed fluorescence can be further adjusted.

To provide a resist composition having high sensitivity and being able to form a pattern with a low exposure amount. A resist composition containing an organic tin compound and an organic boron compound represented by the following formula. (In the formula, R1, R2, and R3 each independently represent an organic group that bonds to boron by a carbon atom, an oxygen-containing organic group that bonds to boron by an oxygen atom, or OH. The oxygen-containing organic group may contain a boron atom. Two groups selected from the group consisting of R1, R2, and R3 may link to form a ring structure.)

The invention discloses aluminum-based powder fuel with a grain boundary oxygen vacancy channel and a preparation method and application of the aluminum-based powder fuel, and particularly relates to the technical field of metal fuel and aluminum-based alloy powder fuel. The method comprises the following steps: heating and melting pure aluminum to form an aluminum melt; then, Al-RE intermediate alloy is added into the aluminum melt, and the total content of the rare earth element RE in the melt is adjusted to be 0.1-7 wt%; and finally, the uniformly mixed melt is subjected to controlled supersonic atomization and rapid solidification, and the aluminum-based alloy powder is obtained. According to the invention, after powder combustion, a rare earth oxide channel rich in oxygen vacancy defects is constructed at a crystal boundary, and then oxidative combustion is further promoted. Lattice distortion and in-situ solid solution of boron atoms are caused by the radius difference of double rare earth (Ce / La) atoms, so that the formation energy of oxygen vacancies is greatly reduced. In the combustion process, high-concentration oxygen vacancies form a high-speed oxygen transmission channel, barrier of a compact oxidation film is broken, oxygen can rapidly permeate into particle cores, and the burn-off rate and energy release efficiency of aluminum powder are remarkably improved.

The embodiment of the invention provides an N-type TOPCon battery and a preparation method thereof, and the preparation method of the N-type TOPCon battery provided by the embodiment of the invention comprises the following steps: after texturing treatment, firstly forming a first mask oxide layer in a non-grid line region on the front surface of a silicon wafer, and then carrying out boron diffusion treatment, as the first mask oxide layer exists in the first region serving as the non-grid line region, boron atoms can be prevented from entering, and the requirement for low doping concentration can be met; boron atoms can be doped at a high concentration due to exposure and no oxidation layer obstruction of the second region serving as the grid line region, and the sheet resistance can be as low as 60 ohms, so that the purpose of boron atom high-low concentration doping in the grid line region and the non-grid line region is achieved, damage of laser doping to the silicon substrate is avoided, and the service life of the silicon substrate is prolonged. And the open voltage and the photoelectric conversion efficiency of the cell can be effectively improved.

The invention provides a boron-containing compound and application thereof. The structural formula of the boron-containing compound is shown as a formula (I). According to the invention, triptycene and triptycene-like compounds containing boron-nitrogen, boron-oxygen and other units are adopted as the light-emitting units, on one hand, the resonance effect between boron atoms and nitrogen, oxygen, sulfur and other atoms can be utilized to realize the separation of HOMO and LUMO so as to realize the TADF effect, and on the other hand, the large-plane parent nucleus unit can reduce the relaxation degree of an excited state structure, so that the light-emitting efficiency is improved. Therefore, the narrow half-peak width is realized; on the other hand, different substituent groups are introduced into a rigid framework, so that the delayed fluorescence lifetime and the half-peak width can be further adjusted.

One or more magnetic tunneling junction (MTJ) pillars are disposed on a substrate. The pillars have one or more magnetic reference layers and one or more magnetic free layers. The magnetic free layers have one or more external surfaces and are made of a magnetic free layer material containing atomic percentage amount of boron. A boron-containing encapsulation layer encapsulates the MTJ pillar(s) and is in direct contact with the magnetic free layer external surfaces. The boron-containing encapsulation layer contains an atomic percentage amount of boron greater than the magnetic free layer atomic percentage amount of boron. Embodiments of the boron-containing encapsulation layer contain at least 95 percent pure boron and are between 1 and 3 nanometers thick. Accordingly, the boron-containing encapsulation layer controls and limits the amount of boron diffusing out of the magnetic free layer across a boron diffusion interface formed between the magnetic free layer external surfaces and the boron-containing encapsulation layer. Alternative embodiments of boron-containing encapsulation layers and methods of making MTJ devices are disclosed.

It is an object of the present invention to provide a chemical solution that, when applied to an object to be treated, can suppress the occurrence of defects containing alkali metals and defects containing boron after the application to the object to be treated and that, when used as a washing solution for pipes, can suppress the occurrence of particle defects on the surface of a substrate supplied with a composition through the washed pipes. The chemical solution of the invention is a chemical solution containing propylene glycol monomethyl ether acetate and boron atoms. The content of propylene glycol monomethyl ether acetate is 80% by mass or more based on the total mass of the chemical solution, and the content of boron atoms is 0.001 to 100 ppt by mass based on the total mass of the chemical solution.

The present application relates to a boron neutron capture therapy system (100) and a method of operating the same, the boron neutron capture therapy system (100) including a neutron beam irradiation device (10), a treatment planning module (30), and a control module (40), wherein the neutron beam irradiation device (10) generates a neutron beam and irradiates the neutron beam to an irradiated body, the treatment planning module (30) sets a boron concentration for each voxel unit in a three-dimensional voxel prosthetic tissue model to generate a treatment plan, and the control module (40) controls the neutron beam irradiation device (10) to irradiate based on the treatment plan. The treatment planning module (30) sets corresponding boron concentration data for each voxel unit, and then combines it with medical image data to perform dose simulation to formulate a treatment plan, thereby making the distribution of boron atoms in the region of interest more consistent with the actual situation, improving the accuracy of model establishment and dose calculation, and ensuring the accuracy of the treatment plan, thereby guaranteeing the treatment effect.