398 results about "Boron atom" patented technology

Methods for forming a boron nitride film by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods may include: providing a substrate into a reaction chamber; and performing at least one unit deposition cycle of a PEALD process, wherein a unit cycle comprises, contacting the substrate with a vapor phase reactant comprising a boron precursor, wherein the boron precursor comprises less than or equal to two halide atoms per boron atom; and contacting the substrate with a reactive species generated from a gas comprising a nitrogen precursor.

By providing a novel polycyclic aromatic compound in which a plurality of aromatic rings are linked via a boron atom, a nitrogen atom, or the like, options of a material for an organic EL element are increased. In addition, by using the novel polycyclic aromatic compound as a material for an organic electroluminescent element, an excellent organic EL element is provided.

The present invention relates to a light-emission-layer material comprising: a novel polycyclic aromatic compound (1) in which a plurality of aromatic rings are linked by a boron atom and a nitrogen atom; and a specific anthracene-based compound (3) that achieves optimum light-emission characteristics in combination with said polycyclic aromatic compound. With this light-emission-layer material having optimum light-emission characteristics, it is possible to provide an excellent organic EL element.

Ring A to ring C are an aryl ring or the like, X is a group represented by formula (3-X1), formula (3-X2), or formula (3-X3), and Ar¹ to Ar⁴ are phenyl, a group represented by formula (4), or the like.

A silicon wafer used in manufacturing GaN for LEDs includes a silicon substrate, a buffer layer of boron aluminum nitride (B_xAl_1-xN) and an upper layer of GaN, for which 0.35≦x≦0.45. The BAlN forms a wurtzite-type crystal with a cell unit length about two-thirds of a silicon cell unit length on a Si(111) surface. The C-plane of the BAlN crystal has approximately one atom of boron for each two atoms of aluminum. Across the entire wafer substantially only nitrogen atoms of BAlN form bonds to the Si(111) surface, and substantially no aluminum or boron atoms of the BAlN are present in a bottom-most plane of atoms of the BAlN. A method of making the BAlN buffer layer includes preflowing a first amount of ammonia equaling less than 0.01% by volume of hydrogen flowing through a chamber before flowing trimethylaluminum and triethylboron and then a subsequent amount of ammonia through the chamber.

According to an aspect of an embodiment, a ferromagnetic tunnel junction device includes: a first pinned magnetic member including a ferromagnetic material having a boron atom; a second pinned magnetic member including a ferromagnetic material on the first pinned magnetic member, the content of the boron atom in the second pinned member being smaller than that in the first pinned member; and a first free magnetic member superposed with respect to the second pinned layer, including a ferromagnetic material. The ferromagnetic tunnel junction device further includes: an insulating layer between the second pinned magnetic layer and the first free magnetic layer; and a second free magnetic member including a ferromagnetic material having a boron atom on the first free magnetic member, the content of the boron atom in the second free member being smaller than that in the first free member.

Pi-conjugated organoboron polymers for use in thin-film organic polymer electronic devices. The polymers contain aromatic and or unsaturated repeat units and boron atoms. The vacant p-orbital of the boron atoms conjugate with the pi-conjugated orbital system of the aromatic or unsaturated monomer units extending the pi-conjugation length of the polymer across the boron atoms. The pi-conjugated organoboron polymers are electron-deficient and, therefore, exhibit n-type semiconducting properties, photoluminescence, and electroluminescence. The invention provides thin-film organic polymer electronic devices, such as organic photovoltaic cells (OPVs), organic diodes, organic photodiodes, organic thin-film transistors (TFTs), organic field-effect transistors (OFETs), printable or flexible electronics, such as radio-frequency identification (RFID) tags, electronic papers, and printed circuit elements, organic light-emitting diodes (OLEDs), polymer light-emitting diodes (PLEDs), and energy storage devices employing the pi-conjugated organoboron polymers. In OLED and PLED applications these materials are used as the electron transport layer (ETL) to improve device efficiency. The polymers which exhibit photo- and electroluminescence are also useful as light-emitting material in PLEDs.

With a light-emission-layer material comprising: a novel polycyclic aromatic compound (1) or a multimer thereof in which a plurality of aromatic rings are linked by a boron atom and a nitrogen atom; and a specific anthracene-based compound (3) that achieves optimum light-emission characteristics in combination with said polycyclic aromatic compound or a multimer thereof, it is possible to provide an organic EL element having optimum light-emission characteristics.

Ring A to ring C are an aryl ring or the like, Y¹ represents B, X¹ and X² represent N—R, R of the N—R is an aryl or the like, and Ar³ and Ar⁴ are a hydrogen atom, a phenyl, a group represented by formula (4), or the like.

A ferromagnetic tunnel junction element is a magnetoresistance effect element wherein an electric resistance varies in accordance with a magnetic field applied. The ferromagnetic tunnel junction element includes a pinned layer wherein at least a part of a magnetization direction is held, and an insulation layer formed on the pinned layer, creating an energy barrier that electrons can flow through by a tunnel effect. A first free layer made of a first ferromagnetic material containing boron atoms, is formed on the insulation layer. In the first free layer, a direction of the magnetization switches under an influence of an external magnetic field. A second free layer made of a first ferromagnetic material containing boron atoms, is formed on the first free layer. The direction of magnetization of the second free layer switches under the influence of the external magnetic field, exchanging and coupling with the first free layer.

The invention relates to an organic light-emitting device taking an exciplex as a main body material, in particular to an organic light-emitting device containing the main body material and a fluorescent material, wherein the main body material comprises a first organic compound and a second organic compound, a mixture or an interface formed by the first organic compound and the second organic compound generates the exciplex under the condition of optical excitation or electric field excitation, and the emission spectrum of the formed exciplex and the absorption spectrum of the fluorescent doped material are effectively overlapped to form the effective energy transfer; the first organic compound and the second organic compound have the different carrier transport characteristics, wherein the fluorescent material is an organic compound containing the boron atoms. The organic light-emitting device prepared by the method has the characteristics of high efficiency and long service life.

A method is disclosed to form a large-grain, lightly p-doped polysilicon film suitable for use as a channel region in thin film transistors. The film is preferably deposited lightly in situ doped with boron atoms by an LPCVD method at temperatures sufficiently low that the film is amorphous as deposited. After deposition, such a film contains an advantageous balance of boron, which promotes crystallization, and hydrogen, which retards crystallization. The film is then preferably crystallized by a low-temperature anneal at, for example, about 560 degrees for about twelve hours. Alternatively, crystallization may occur during an oxidation step performed, for example at about 825 degrees for about sixty seconds. The oxidation step forms a gate oxide for a thin film transistor device, for example a tunneling oxide for a SONOS memory thin film transistor device.

An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B₂F₄. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Belonging to the technical field of industrial catalysis, the invention discloses a catalyst for oxidative dehydrogenation of light alkane to prepare olefin, an optimization method and application thereof. The catalyst for oxidative dehydrogenation of light alkane to prepare olefin is a solid non-metal catalyst, is composed of nitrogen atoms and boron atoms, is sp<2> or sp<3> hybridized hexagonal boron nitride, cubic boron nitride and rhombohedral, and presents a boron nitride crystal structure. By means of surface functionalization (preferably hydroxylation), the catalyst surface structure can be optimized. The catalyst can be used for oxidative dehydrogenation reaction of single component and multicomponent light alkane to prepare olefin, the alkane conversion rate and olefin selectivity are high, and the content of generated CO2 is smaller than 5%. Compared with the prior art, the catalyst provided by the invention has no need of loading other metal/metal oxide and other active components, the process is simple, and can significantly improve olefin yield, and the catalyst has good long-term stability, and very low CO2 emission, thus having good industrial development and application prospects.

The invention discloses a method for boron doping of a crystalline silicon solar battery, which comprises the following steps that: a first layer of film-boron doped silicon oxide film is deposited on the surface of a silicon chip after the wool making, a second layer of film-silicon oxide film is deposited on the first layer of the film to be used as a barrier layer, then the silicon chip is processed at high temperature, so boron atoms can be diffused into a silicon basic body to form a boron doped layer. Due to the adoption of the method, a boron transmission electrode (p+) can be prepared on an n-type silicon chip, or a boron back surface (p+) is formed on a p-type silicon chip. Through the barrier layer, single-faced boron doping can be realized, and a boron source is free from being sucked into a diffusion furnace tube, so the corrosion of the furnace tube can be reduced, and the service life can be prolonged; and if a phosphorus source is introduced during the high-temperature annealing process, the boron doping and phosphorus doping can be respectively realized on two sides of the silicon chip.

The invention provides a preparation method for a boron-nitrogen-co-doped three-dimensional structured positive electrode material of a lithium-sulfur battery. The preparation method comprises the following steps of (1), adding graphite oxide into water for performing ultrasonic processing to form a graphene oxide suspension liquid; (2), adding ammonium hydroxide to the graphene oxide suspension liquid, and then adding sodium borohydride to the graphene oxide suspension liquid to obtain three-dimensional boron-nitrogen-co-doped graphene; (3), adding the three-dimensional boron-nitrogen-co-doped graphene obtained in the step (2) and ketjen black into N-methyl pyrrolidone for performing an ultrasonic reaction to form a suspension liquid; (4), adding sulfur to the N-methyl pyrrolidone for performing an ultrasonic reaction until the elemental sulfur is fully dissolved to form a suspension liquid; and (5), mixing the two kinds of suspension liquid obtained in the step (4) and the step (3), and then adding distilled water to obtain the three-dimensional structured positive electrode material of the lithium-sulfur battery. Due to sulfur adsorption by the synergistic effects of boron atoms and nitrogen atoms in the boron-nitrogen-co-doped graphene, the shuttle effect is lowered, so that the cycling life of the lithium-sulfur battery is prolonged.

The invention discloses a semiconductor-typed single-walled carbon nano tube and a preparation method thereof, belonging to the carbon nano tube technical field. The carbon atoms on the tube wall of the single-walled carbon nano tube are replaced by doping atoms which comprise nitrogen atoms, boron atoms, oxygen atoms or sulfur atoms. The preparation method thereof comprises: at the reaction temperature, in an inert environment and under the catalysis of a catalyst which is positioned on substrate, the reaction gas is deposited on the substrate by chemical vapor deposition, so as to obtain the carbon nano tube; the reaction gas comprises carbon source and doped source which come from the same substance or different substances; after the chemical vapor deposition, a semiconductor-typed single-walled carbon nano tube is prepared. Compared with the prior art, the invention has the advantages of simple equipment, easy operation, low raw material cost and strong product repeatability, and can obtain single-walled carbon nano tubes which are all semiconductor-typed.

The invention provides a boron-doped nanocrystalline diamond film. The boron-doped nanocrystalline diamond film is prepared by using the following steps of: preparing a boron-doped nanocrystalline diamond film on a monocrystalline silicon substrate by adopting a CVD (Chemical Vapor Deposition) method and annealing the film in vacuum at 800-1200 DEG C for 30-60 min to obtain the boron-doped nanocrystalline diamond film. By using the vacuum annealing method, the invention ensure that boron atoms aggregated on a grain boundary of the nanocrystalline diamond film are dispersed into nanocrystalline diamond grains and the amount of trans-polyacetylene on the grain boundary is greatly reduced, thereby effectively improving the p-type conductive performance and the electrochemical performance of the boron-doped nanocrystalline diamond film. The invention has very important scientific meaning and engineering values to the application of the boron-doped nanocrystalline diamond film in nano-electronic devices and the electrochemical field, such as water treatment, heavy metal detection, and the like.

The invention relates to a preparation method of boron-doping carbon nitride as well as a product and application thereof. By virtue of a hydrothermal reaction way of melamine and boric acid, on one hand, boron atoms have chemical reaction with melamine, so that the boron and carbon-nitrogen elements are mixed in an atomic level; on the other hand, the hydrothermal reaction is performed for the melamine in an acid environment, so that a supermolecule-like structure is formed, and the separation of a carbon nitride lamina structure in the subsequent roasting process can be facilitated; and a precursor synthesized in the reaction is roasted to prepare boron-doped carbon nitride which is uniform in doping and has a thinner lamina structure. The boron-doping carbon nitride prepared by adoptingthe preparation method of the invention is uniform in element doping, thinner in lamina, better in optical catalysis, simple in preparation operation, low in difficulty and suitable for enlarged production.