80 results about "Boron atom" patented technology

The invention relates to the technical field of compound preparation and medicine, in particular to a boron atom-labeled compound for targeting fibroblast activating protein as well as a preparation method and application of the boron atom-labeled compound. The preparation method comprises the following steps: carrying out acid amine condensation on (4-(((2, 5-dioxopyrrolidine-1-yl) oxy) carbonyl) phenyl) boric acid and an FAP targeting ligand to obtain a boron atom-labeled compound targeting the fibroblast activating protein; and the FAP targeting ligand is FAPI-46 or FAP-2286 (Fibroblast Amplified Polymorphism). The compound is easy to prepare, high in purity and good in stability, the content of boron atoms in tumor tissue can be greatly increased, and a treatment basis is provided for boron neutron capture therapy.

An organic electroluminescence device may include: an anode; a cathode; and an emitting layer disposed between the anode and the cathode. The emitting layer may include a delayed fluorescent compound M2, a compound M3 including a deuterium atom, and a fluorescent compound M1. The compound M1 may include a boron atom. The compound M3 does not have a partial structure of formula (1C) or (2C):Y41 to Y48 each independently being N, CR, or C bonded to another atom or another structure, at least one of Y41 to Y48 being N, at least one of Y41 to Y48 being C bonded to another atom or another structure, each R independently being H or a substituent. The singlet energy S1(M2) of the compound M2 and a singlet energy S1(M3) of the compound M3 may satisfy a relationship of a formula (1):S1(M3)>S1(M2)  (1).

The utility model provides a reaction furnace and processing equipment, relates to the field of semiconductor or photovoltaic material processing, and solves the technical problem that boron atoms cannot be doped into silicon wafers due to gas leakage of the reaction furnace. The reaction furnace comprises a furnace tube assembly, wherein a first opening of the furnace tube assembly is communicated with a reaction cavity; the first flange assembly is connected with the end, provided with the first opening, of the furnace tube assembly, the first flange assembly is provided with a first gas channel and a second opening, and protective gas can pass through the first gas channel to form a gas curtain at the first opening; the second flange assembly is connected with the first flange assembly, and the second flange assembly is provided with a second gas channel and a third opening; and the furnace door can be connected with the second flange assembly and is configured to seal the third opening. By means of the structure, when the furnace tube assembly leaks, protective gas can be introduced into the first gas channel, the protective gas can form a protective gas layer, and oxygen molecules are prevented from making contact with a product.

The application provides a fused ring compound containing boron, nitrogen, sulfur atoms and a five-membered aromatic heterocycle, as shown in formula (I). Compared with the prior art, the application uses the fused ring compound containing boron, nitrogen, sulfur atoms and a five-membered aromatic heterocycle as a light-emitting material, which can realize the separation of HOMO and LUMO by using the resonance effect between boron atoms, nitrogen atoms and sulfur atoms, thereby realizing smaller ΔE ST and TADF effect, and meanwhile, the hybrid fused ring unit has a rigid skeleton structure, can reduce the relaxation degree of the excited state structure, thereby realizing a narrower half peak width; on the other hand, the five-membered aromatic heterocycle and different substituents can be introduced into the skeleton of the boron / nitrogen / sulfur hybrid fused ring unit, so that the lifetime and half peak width of the delayed fluorescence can be further adjusted.

To provide a resist composition having high sensitivity and being able to form a pattern with a low exposure amount. A resist composition containing an organic tin compound and an organic boron compound represented by the following formula. (In the formula, R1, R2, and R3 each independently represent an organic group that bonds to boron by a carbon atom, an oxygen-containing organic group that bonds to boron by an oxygen atom, or OH. The oxygen-containing organic group may contain a boron atom. Two groups selected from the group consisting of R1, R2, and R3 may link to form a ring structure.)

The invention discloses aluminum-based powder fuel with a grain boundary oxygen vacancy channel and a preparation method and application of the aluminum-based powder fuel, and particularly relates to the technical field of metal fuel and aluminum-based alloy powder fuel. The method comprises the following steps: heating and melting pure aluminum to form an aluminum melt; then, Al-RE intermediate alloy is added into the aluminum melt, and the total content of the rare earth element RE in the melt is adjusted to be 0.1-7 wt%; and finally, the uniformly mixed melt is subjected to controlled supersonic atomization and rapid solidification, and the aluminum-based alloy powder is obtained. According to the invention, after powder combustion, a rare earth oxide channel rich in oxygen vacancy defects is constructed at a crystal boundary, and then oxidative combustion is further promoted. Lattice distortion and in-situ solid solution of boron atoms are caused by the radius difference of double rare earth (Ce / La) atoms, so that the formation energy of oxygen vacancies is greatly reduced. In the combustion process, high-concentration oxygen vacancies form a high-speed oxygen transmission channel, barrier of a compact oxidation film is broken, oxygen can rapidly permeate into particle cores, and the burn-off rate and energy release efficiency of aluminum powder are remarkably improved.

One or more magnetic tunneling junction (MTJ) pillars are disposed on a substrate. The pillars have one or more magnetic reference layers and one or more magnetic free layers. The magnetic free layers have one or more external surfaces and are made of a magnetic free layer material containing atomic percentage amount of boron. A boron-containing encapsulation layer encapsulates the MTJ pillar(s) and is in direct contact with the magnetic free layer external surfaces. The boron-containing encapsulation layer contains an atomic percentage amount of boron greater than the magnetic free layer atomic percentage amount of boron. Embodiments of the boron-containing encapsulation layer contain at least 95 percent pure boron and are between 1 and 3 nanometers thick. Accordingly, the boron-containing encapsulation layer controls and limits the amount of boron diffusing out of the magnetic free layer across a boron diffusion interface formed between the magnetic free layer external surfaces and the boron-containing encapsulation layer. Alternative embodiments of boron-containing encapsulation layers and methods of making MTJ devices are disclosed.

The present application relates to a boron neutron capture therapy system (100) and a method of operating the same, the boron neutron capture therapy system (100) including a neutron beam irradiation device (10), a treatment planning module (30), and a control module (40), wherein the neutron beam irradiation device (10) generates a neutron beam and irradiates the neutron beam to an irradiated body, the treatment planning module (30) sets a boron concentration for each voxel unit in a three-dimensional voxel prosthetic tissue model to generate a treatment plan, and the control module (40) controls the neutron beam irradiation device (10) to irradiate based on the treatment plan. The treatment planning module (30) sets corresponding boron concentration data for each voxel unit, and then combines it with medical image data to perform dose simulation to formulate a treatment plan, thereby making the distribution of boron atoms in the region of interest more consistent with the actual situation, improving the accuracy of model establishment and dose calculation, and ensuring the accuracy of the treatment plan, thereby guaranteeing the treatment effect.

Method for coating short fibers. The present invention relates to a method for coating short fibers, comprising: - the desizing of sieved silicon carbide short fibers, - the deposition, on the desizing short fibers, of an adhesion promoter made of a metal oxide ceramic material having pendant groups on its surface, the adhesion promoter being deposited by atomic layer deposition technique, and - the deposition, on the desizing short fibers coated with the adhesion promoter, of boron nitride by atomic layer deposition technique, comprising (a) the grafting of a first Lewis acid precursor comprising boron to the surface of the adhesion promoter by addition to the pendant groups at the boron atom, and (b) the reaction of the first precursor thus grafted with a second precursor comprising nitrogen to obtain boron nitride. Fig. 2.

The application discloses an aluminum-based powder fuel with a grain boundary oxygen vacancy channel and a preparation method and application thereof, and particularly relates to the technical field of metal fuel and aluminum-based alloy powder fuel. The method comprises the following steps: heating and melting pure aluminum to form an aluminum melt; then adding an Al-RE intermediate alloy into the aluminum melt, and adjusting the total content of rare earth elements RE in the melt to be 0.1-7 wt%; finally, performing controlled supersonic atomization rapid solidification on the uniformly mixed melt to obtain an aluminum-based alloy powder. After the powder burns, a rare earth oxide channel rich in oxygen vacancy defects is constructed at the grain boundary, and the oxidation combustion is further promoted. The lattice distortion caused by the difference in atomic radii of double rare earth (Ce / La) and the in-situ solid solution of boron atoms greatly reduce the formation energy of oxygen vacancies. In the combustion process, high-concentration oxygen vacancies form a "high-speed oxygen transmission channel", break the barrier of the dense oxide film, and enable oxygen to quickly penetrate into the particle core, thereby significantly improving the burnout rate and energy release efficiency of the aluminum powder.

This invention discloses a method for preparing high sheet resistance shallow pn junction single-crystal silicon wafers based on rapid boron diffusion, comprising the following steps: S1: depositing a boron-containing precursor on the textured silicon wafer surface; S2: depositing a low-temperature oxide layer on the surface of the boron-containing precursor; S3: placing the silicon wafer with the deposited low-temperature oxide layer in a rapid thermal processing device, rapidly heating it to 1050-1350℃ at a heating rate of 5-200℃ / s, holding it at this temperature for 20-600s, and then rapidly cooling it to complete the diffusion and activation of boron atoms in the silicon wafer. This invention employs a combination of low-temperature deposition and rapid boron diffusion, which can significantly shorten the boron diffusion time, reduce energy consumption, and shorten the high-temperature processing time. It also suppresses the formation of oxygen precipitate defects at the source, eliminating problems such as black cores and black rings in batteries, and significantly improving carrier lifetime and material electrical performance.

The invention discloses boron-containing carbide ceramic for a high-temperature aerobic environment and a preparation method of the boron-containing carbide ceramic, and belongs to the technical field of carbide ceramic. The ceramic is (HfnTam) (CxBy), Hf and Ta are adopted as raw materials to prepare carbides, on the basis, boron carbide and boron oxide are added to serve as boron sources, designed carbon vacancies are filled with boron atoms, the crystal structure of the carbides is not changed, meanwhile, redundant oxygen brought by boron oxide is eliminated through boron carbide, and finally boron-containing carbides are formed. In the whole preparation process, powder is prepared only through one-time high-temperature treatment, the ceramic block is prepared through one-time high-temperature sintering, the preparation efficiency is higher, and the prepared boron-containing carbide ceramic block is high in density and shows high oxidation resistance.

The present disclosure provides a process for reducing the boron concentration in a semiconductor layer (12) of a semiconductor-on-insulator substrate (1), comprising: at least one thermal treatment cycle, each cycle including thermally oxidizing the semiconductor layer (12) to form an oxide layer (120) on the semiconductor layer (12), wherein boron atoms from the semiconductor layer (12) diffuse into the oxide layer (120) such that boron segregation causes the semiconductor layer (12) to be boron deficient at its interface with the oxide layer (120); removing the oxide layer (120); Including, thermally oxidizing includes increasing the temperature above a target thermal oxidation temperature in an inert atmosphere and then decreasing the temperature to the target thermal oxidation temperature to create a temperature gradient within the substrate to induce a higher rate of formation of the oxide layer (120) at the center of the semiconductor layer than at the edges; Regarding the process.

There is provided an AlN single-crystal substrate having a two-layer structure composed of an AlN single crystal as a whole, which is distinguishable into a first layer and a second layer in a thickness direction based on an impurity concentration. The AlN single-crystal substrate includes boron as an impurity, and a boron atom concentration in the first layer is 9.4×1018 cm−3 or more, and is at least 10 times a boron atom concentration in the second layer.

To provide a light-emitting element with a low driving voltage. [Solution] A light-emitting element having an anode, a cathode, and a first layer and a second layer provided between the anode and the cathode, wherein the first layer is a layer containing compound (B) and two or more compounds represented by formula (T-1), and compound (B) is a boron atom, an oxygen atom, a sulfur atom, a selenium atom, sp 3 A compound having a fused heterocyclic skeleton (b) containing at least one selected from the group consisting of carbon atoms and nitrogen atoms in the ring, wherein the second layer is a layer containing a crosslinked compound having a crosslinking group, and of the two or more compounds represented by formula (T-1), at least two compounds contain Ar T2 However, if each is independently a group obtained by removing one or more hydrogen atoms from a pyrimidine, then the at least two compounds are (i) light-emitting elements having a molecular weight difference of 80 or more. TIFF2026053954000076.tif20170

This invention discloses a method for growing highly mobile, heavily doped single-crystal diamond using a solid-state boron source. The aim of this invention is to address the problem that existing MPCVD boron doping processes introduce other non-doping source impurities, making it difficult to achieve high-concentration boron doping. The method for growing heavily doped single-crystal diamond involves: 1. Polishing the surface of a single-crystal diamond substrate; 2. Heating the diamond substrate at high temperature in a strong oxidizing mixed acid; 3. Placing the single-crystal diamond substrate on a solid boron sheet and introducing a mixture of hydrogen and methane gas to grow a boron-doped diamond film on the substrate surface; 4. Performing a final surface cleaning. This invention employs microwave plasma chemical vapor deposition (PCCVD) using a solid boron sheet as the boron source. The carbon atoms provided by methane promote the release of boron atoms from the solid boron sheet, effectively facilitating the entry of doped atoms into the diamond lattice, thus achieving the preparation of high-quality, high-mobility doped single-crystal diamond with a boron doping concentration of 10⁻⁶. 20 cm ‑3 ~10 21 cm ‑3 .

The application belongs to the technical field of organic optoelectronic material preparation and application, and discloses a boron-nitrogen heterocyclic derivative based on a fusion donor, preparation and application thereof.The organic material takes a boron-nitrogen heterocyclic ring containing different numbers of ring-forming boron atoms as a core, and is obtained by extending the molecular skeleton through the conjugation and ring of the peripheral chemical groups of the fusion donor.The boron-nitrogen heterocyclic derivative based on the fusion donor has excellent light and thermal stability, good electrochemical stability, and excellent electroluminescent performance, and can be applied to an organic electroluminescent device as a host material or a sensitizing agent material or a luminescent material, so that higher device efficiency, stability and color purity can be obtained.

The invention discloses a lithium-doped crystalline silicon photovoltaic cell, a silicon wafer, a crystal ingot and a doping method thereof, and belongs to the field of photovoltaic cells. A proper amount of impurity lithium and impurity boron are combined and doped to form p-type first lithium silicon, the electronegativity of the lithium element is only 0.98, when space high-energy irradiation is not encountered, doped lithium saturates holes of part of boron atoms, and when space high-energy irradiation is encountered, on one hand, outer layer electrons of lithium are easily attracted by an electron trap, and on the other hand, the outer layer electrons of lithium are easily attracted by an electron trap; passivation of electron traps and'release 'of boron atom holes are objectively formed, and as a result, multi-sub-holes of the p-type silicon material are increased, and the conductivity is increased instead of being reduced; on the other hand, due to the fact that positive lithium ions accompany the electron trap, the probability that the electron trap captures a photo-generated minority carrier hole is greatly reduced, and the photoelectric conversion efficiency of the space battery can be improved.

This invention provides a boron-doped biomass carbon cathode for efficient H2O2 generation, its preparation method, and its application, belonging to the field of advanced electrochemical oxidation technology for water treatment. The invention involves mixing boric acid solution with biomass powder, followed by sequential heating, first cooling, filtration, drying, calcination, second cooling, washing, and drying to obtain boron-doped biomass carbon powder. Carbon black, boron-doped biomass carbon powder, polytetrafluoroethylene dispersion, and anhydrous ethanol are mixed and ultrasonically dispersed, then heated and stirred to obtain a boron-doped biomass carbon slurry. This slurry is then bonded to nickel foam and cured at high temperature to obtain the boron-doped biomass carbon cathode. This invention utilizes the non-metallic element boron doping, where electron-deficient boron replaces carbon to form B-C bonds, generating a positive charge near the boron atom, which is beneficial for H2O2 adsorption and produces no iron sludge. Compared to traditional electro-Fenton cathodes, this invention eliminates the need for external addition of H2O2 and Fe. 2+ It can simultaneously generate activated H2O2 in situ, producing hydroxyl radicals to degrade pollutants.

To provide a photon upconversion material that is practical and can be applied to solid films. [Solution] The photon upconversion material of the present invention is an acceptor compound having a π-conjugated condensed polycyclic structure containing at least one aromatic ring unit (where, one of the aromatic ring units is bonded to a group having a chain length of 4 atoms or more, such as sp 3 The compound comprises a carbon atom, a silicon atom bonded to a group having a chain length of 4 or more atoms, a nitrogen atom bonded to a group having a chain length of 4 or more atoms, or a boron atom bonded to a group having a chain length of 4 or more atoms, and a donor compound that imparts triplet energy to the acceptor compound.

An aluminum member (1) includes: a base material (2) composed of aluminum or an aluminum alloy; and an anodic oxide film (3) formed on a surface of the base material. The anodic oxide film includes: an amorphous layer (31), which is composed of an amorphous aluminum oxide and is formed on the base material (2); and a crystal layer (32), which is composed of a crystalline aluminum oxide and is formed on the amorphous layer (31). The aluminum member (1) can be obtained by forming the anodic oxide film (3) on the base material (2) by performing an anodization process on the base material (2) in an electrolytic solution, which contains boron atoms and has a pH of 7.0-12.0.

The present invention provides a method for preparing a boron nitride thin film and the boron nitride thin film itself. The method primarily includes providing a precursor containing boron and nitrogen atoms to an energy control apparatus and forming an excited state of the precursor within this energy control apparatus. Finally, a material layer is formed on a substrate, where this material layer comprises boron nitride. The key feature of this method is the use of an energy control apparatus that includes a first electromagnetic wave source emitting electromagnetic waves within a specific wavelength range. The advantage of this method is that it can be operated at lower temperatures, reducing the risk of thermal damage to the substrate and also decreasing energy consumption. Additionally, the method includes several optional steps that can further enhance the formation of the boron nitride thin film.

The invention provides a solar cell, a preparation method thereof and a photovoltaic module. The method for preparing the solar cell comprises the steps that a silicon substrate is provided, a first borosilicate glass layer and a second borosilicate glass layer are sequentially deposited on the front face, and the percentage of oxygen atoms in the first borosilicate glass layer is larger than the percentage of oxygen atoms in the second borosilicate glass layer; the percentage of boron atoms in the first borosilicate glass layer is smaller than that in the second borosilicate glass layer; and annealing the first borosilicate glass layer and the second borosilicate glass layer, and forming a boron emission electrode layer on the surface of the silicon substrate. Therefore, the preparation method can effectively improve the interface passivation effect, reduce the interface defects, facilitate the formation of a battery structure with a high-concentration boron emission electrode layer and a shallow PN junction, improve the carrier transport and improve the battery efficiency.

The application relates to the technical field of lithium ion battery negative electrode material preparation, and discloses a kind of composite negative electrode material doped with nitrogen / phosphorus / boron element and a preparation process thereof, comprising: adding boric acid in phytic acid aqueous solution, controlling the reaction to jump the dynamic viscosity of system to a specific interval, to generate boron-phosphorus ester oligomer;The oligomer is hot injected into the hot saturated solution of melamine under high shear state, and the pH value is adjusted to induce the generation of nitrogen / phosphorus / boron supramolecular precursor gel adsorbed on the surface of negative electrode active substrate;After drying and high-temperature heat treatment, it is in-situ converted into a nitrogen-phosphorus-boron co-doped graphitized carbon coating layer, the application utilizes the thermal stability locking effect of P-O-B bonding network in boron-phosphorus ester oligomer on boron atom, to inhibit the volatilization of boron at high temperature.

The application discloses a light-emitting element and a display panel. The light-emitting element comprises a first electrode, a second electrode and a light-emitting layer between the first electrode and the second electrode. The material of the light-emitting layer comprises a guest material and a host material. The guest material comprises at least one compound represented by a general formula (1) and at least one compound represented by a general formula (2-1). The host material comprises at least two compounds represented by a general formula (3-1). The application forms the guest material of at least two boron atom fused ring compounds and the host material of at least two anthracene derivatives in the light-emitting layer, so that the carrier balance in the light-emitting layer is higher, the light-emitting efficiency of the light-emitting element is improved, and the light-emitting life of the light-emitting element is prolonged.

This invention discloses a lithium-doped crystalline silicon photovoltaic cell, silicon wafer, ingot, and doping method thereof, belonging to the field of photovoltaic cells. By combining appropriate amounts of impurity lithium and impurity boron with lithium to form p-type first lithium silicon, lithium, with an electronegativity of only 0.98, saturates some of the boron atom holes when not exposed to high-energy space radiation. Upon exposure to high-energy space radiation, on the one hand, the outer electrons of lithium are easily attracted by electron traps, objectively passivating the electron traps and "releasing" the boron atom holes. As a result, the majority carrier holes in the p-type silicon material increase, and the conductivity increases instead of decreasing. On the other hand, due to the "accompaniment" of positive lithium ions to the electron traps, the probability of the electron traps capturing photogenerated minority carrier holes is greatly reduced, which is beneficial to improving the photoelectric conversion efficiency of the space cell.

The invention relates to a method for reducing the boron concentration of a semiconductor layer (12) of a semiconductor-on-insulator substrate (1), comprising: - at least one heat treatment cycle, each cycle comprising thermal oxidation of said semiconductor layer (12) so as to form an oxide layer (120) on the semiconductor layer (12), in which, by boron segregation, boron atoms from the semiconductor layer (12) diffuse into the oxide layer (120) so as to create a boron concentration deficit in the semiconductor layer (12) at the interface with the oxide layer (120), and - removal of the oxide layer (120). Abstract figure: Figure 5

The invention provides a preparation method and equipment of a battery emitter, relates to the field of semiconductor or photovoltaic material processing, and solves the technical problem of low battery efficiency caused by non-uniform temperature of the edge and the center of a silicon wafer in a traditional boron junction pushing process. The preparation method of the battery emitter comprises the following steps: under a heating condition, depositing a borosilicate glass layer on one side of an N-type silicon wafer in a first direction; under the condition of continuous cooling, protective gas is introduced into the process chamber, so that boron atoms in the borosilicate glass layer are pushed to enter the part, close to the borosilicate glass layer, of the N-type silicon wafer. As part of heat in the center of the N-type silicon wafer needs to be transmitted outwards through the edge, the cooling speed of the edge is higher than that of the center, the difference between the edge temperature and the center temperature is reduced, the speeds of boron atoms pushing junctions to the edge and the center are closer, the distribution difference of boron impurities in the edge and the center is reduced, the junction depth is more uniform, and the junction quality is improved. And the battery efficiency is improved.

A color conversion composition according to one aspect of the present invention contains at least one type of light-emitting material and a binder resin. The at least one type of light-emitting material includes a compound that has a structure represented by general formula (1). (The ring Za, the ring Zb, the ring Zc, the ring Zd, the ring Ze, the ring Zf, and the ring Zg each independently represent a substituted or unsubstituted aryl ring having 5 to 30 ring atoms or a substituted or unsubstituted heteroaryl ring having 5 to 30 ring atoms. Z1 to Z4 each independently represent a direct bond, an oxygen atom, a sulfur atom, a nitrogen atom, NRa, C=O, S(=O), or S(=O)2. E represents a boron atom, a phosphorus atom, SiRa, or P=O. Each of the substituents Ra and RC is selected from a specific substituent group.)

The application relates to the technical field of solar cells, and particularly provides a method for removing boron trioxide in a furnace tube, which aims to remove the accumulated boron trioxide in the furnace tube at a low cost. The method comprises the following steps: placing a silicon wafer in the furnace tube, introducing oxygen into the furnace tube, and increasing the temperature to a preset temperature, so that the boron trioxide and the silicon wafer react, and after the gettering stopping condition is met, the furnace tube is cooled and the silicon wafer is taken out. According to the application, the boron trioxide in the furnace tube reacts with the silicon wafer at high temperature to obtain silicon oxide and boron atoms. Since the solid solubility of the boron atoms in the silicon oxide is higher than that in the silicon, the boron atoms can be adsorbed by the silicon oxide, so that the accumulated boron trioxide in the furnace tube is removed. The method is simple and convenient, the boron trioxide in the furnace tube can be adsorbed when the furnace tube is idle to avoid impurity accumulation, and a large amount of cost is not needed, so that the accumulated boron trioxide in the furnace tube is removed in time at a low cost.