144 results about "Boron atom" patented technology

The invention belongs to the technical field of OLEDs, and provides a polycyclic compound containing triphenyl silicon and a polyalkyl substituent group and an organic electroluminescent device containing the polycyclic compound. The structural general formula of the polycyclic compound is as shown in formula I in the specification. Benzofuran with higher electronegativity is introduced to a ring structure composed of nitrogen atoms and boron atoms, triphenyl silicon is introduced to the para-position of boron, and the synergistic effect of benzofuran and triphenyl silicon can significantly enhance the multiple resonance of a light-emitting core and reduce vibration relaxation. Due to simultaneous use of the benzofuran and the triphenyl silicon, the problems of vibration relaxation increase, spectrum widening and the like caused by introduction of the polyalkyl substituent are remarkably improved, the luminous efficiency of the material is remarkably improved, and the color purity is improved, so that the requirement of BT.2020 wide color gamut display standard on a luminescent spectrum is met. I

The invention provides a red light and infrared light-emitting compound based on a boron-nitrogen fused ring and application thereof. The invention provides a boron-nitrogen polycyclic aromatic hydrocarbon material of a fused naphthalene ring, and a specific strong electron withdrawing group is introduced to a boron atom para-position. Compared with a compound disclosed in the prior art, the compound provided by the invention introduces a strong electron withdrawing group to a boron atom para-position of boron-nitrogen polycyclic aromatic hydrocarbon of a fused naphthalene ring, so that the emission spectrum of the material can be subjected to significant red shift (red shift from a yellow light band to a red light band and even an infrared band), and red light and even infrared light emission with high luminous efficiency and a narrow band can be realized. An electroluminescent device prepared from the compound provided by the invention shows relatively high luminescent color purity and relatively excellent luminous efficiency, and can meet the requirements of current enterprise production on high-performance luminescent materials.

The embodiment of the invention discloses a composite shielding plate and a preparation method thereof, and the composite shielding plate comprises a cladding which is provided with an accommodation space, and the accommodation space is in a vacuum state; the shielding material is arranged in the accommodating space; wherein the shielding material comprises a neutron moderation base material, and the cladding is made of a boron-containing metal material; or the shielding material comprises a neutron moderation base material and a neutron absorption base material, the cladding is made of a metal material, the neutron moderation base material comprises rare earth hydride, and the neutron absorption base material comprises boron-containing ceramic. The composite shielding plate provided by the embodiment of the invention not only comprises the neutron moderation base material which is high in hydrogen content and excellent in temperature resistance so as to effectively moderate fast neutrons, but also is combined with the neutron absorption base material containing boron atoms so as to efficiently absorb thermal neutrons, so that the complete neutron moderation-absorption integrated shielding performance of the composite shielding plate is realized; and stable shielding performance can be provided at the temperature of 300-1000 DEG C.

The invention relates to the technical field of compound preparation and medicine, in particular to a boron atom-labeled compound for targeting fibroblast activating protein as well as a preparation method and application of the boron atom-labeled compound. The preparation method comprises the following steps: carrying out acid amine condensation on (4-(((2, 5-dioxopyrrolidine-1-yl) oxy) carbonyl) phenyl) boric acid and an FAP targeting ligand to obtain a boron atom-labeled compound targeting the fibroblast activating protein; and the FAP targeting ligand is FAPI-46 or FAP-2286 (Fibroblast Amplified Polymorphism). The compound is easy to prepare, high in purity and good in stability, the content of boron atoms in tumor tissue can be greatly increased, and a treatment basis is provided for boron neutron capture therapy.

The invention discloses a boron doping method, a boron doping structure and a back contact battery. The method comprises the following steps: step 1) pre-crystallization treatment; step 2) pre-oxidation; (3) boron diffusion; wherein the pre-crystallization treatment is to treat the amorphous silicon layer in the silicon wafer base material in a gradient variable pressure mode in an inert gas atmosphere. According to the method, before pre-oxidation and boron diffusion, amorphous silicon is converted into microcrystalline silicon in a gradient transformation manner, and gradual crystallization is realized, so that lattice stress is reduced, gradient distribution of grain sizes can be realized, the problem of uneven grain sizes caused by a single crystallization condition and the problem of doping concentration fluctuation caused by an unordered structure of the amorphous silicon are avoided, and the yield of the amorphous silicon is improved. According to the method, the boron atoms can be transferred to a balance position more easily, an ordered structure is formed, the distribution is more uniform, the boron-doped structure with better sheet resistance uniformity is obtained, and the photoelectric conversion efficiency of the back contact battery based on the boron-doped structure is further improved.

The invention relates to the technical field of hard alloys, and particularly discloses a ruthenium boride reinforced ultra-ultra coarse grain WC-Co hard alloy and a preparation method thereof in order to solve the problems of low strength and hardness and poor toughness of an ultra-ultra coarse grain alloy product caused by difficult control of grain size in an existing ultra-ultra coarse grain alloy preparation process. The ultra-coarse grain WC-Co hard alloy comprises the following raw materials: 0.5-5% of ruthenium-boron mixed powder, 5-10% of cobalt powder and the balance of tungsten carbide particles. Wherein the number ratio of ruthenium atoms to boron atoms in the ruthenium-boron mixed powder is 1: (0.5-1.5), and the carbon adjusting range of the total mass of tungsten and carbon in the tungsten carbide particles is 6.08-6.20 wt%. The problems that WC particles are excessively crushed and Co phases are non-uniformly distributed are solved by utilizing high-energy stirring dry mixing without adding a grinding body and combining a flexible wet grinding process with extremely short time and extremely low ball-to-material ratio, and Ru powder and B powder are introduced and combined with a special sintering process, so that the effects of high toughness, high hardness, high heat conductivity and the like of the ultra-coarse grain alloy are achieved.

The present invention relates to the field of catalyst technology, and discloses a hydrogen-type boron-containing EU-1 molecular sieve and a preparation method thereof, a C8 aromatic hydrocarbon isomerization catalyst and a preparation method and application thereof. The molecular sieve contains metal cations, and the metal cations are alkali metal cations with an atomic number ≮19 and / or alkaline earth metal cations with an atomic number ≮19; in the hydrogen-type boron-containing EU-1 molecular sieve, the ratio of the molar amount of the metal cations, the molar amount of silicon atoms, and the sum of the molar amounts of boron atoms and aluminum atoms is 0.05-0.7:10-100:1, and the molar ratio of the boron atoms to the aluminum atoms is 0.1-1.5:1. The C8 aromatic hydrocarbon isomerization catalyst provided by the present invention is used for catalyzing the isomerization reaction of C8 aromatic hydrocarbons, and can improve the yield of C8 aromatic hydrocarbons while maintaining a high isomerization activity.

An organic electroluminescence device may include: an anode; a cathode; and an emitting layer disposed between the anode and the cathode. The emitting layer may include a delayed fluorescent compound M2, a compound M3 including a deuterium atom, and a fluorescent compound M1. The compound M1 may include a boron atom. The compound M3 does not have a partial structure of formula (1C) or (2C):Y41 to Y48 each independently being N, CR, or C bonded to another atom or another structure, at least one of Y41 to Y48 being N, at least one of Y41 to Y48 being C bonded to another atom or another structure, each R independently being H or a substituent. The singlet energy S1(M2) of the compound M2 and a singlet energy S1(M3) of the compound M3 may satisfy a relationship of a formula (1):S1(M3)>S1(M2)  (1).

This invention discloses a silicon-based high electron mobility transistor and its fabrication method, relating to the field of semiconductor process technology. The silicon-based high electron mobility transistor includes: a substrate; an AlN nucleation layer, a high-resistivity buffer layer, a channel layer, an AlN insertion layer, an AlGaN barrier layer, and a GaN capping layer sequentially disposed on the substrate; wherein the AlN nucleation layer includes a roughened first high-temperature AlN nucleation layer and a second high-temperature AlN nucleation layer, with the first high-temperature AlN nucleation layer disposed on the substrate. The first high-temperature AlN nucleation layer effectively blocks impurities in the substrate. Surface roughening of the first high-temperature AlN nucleation layer releases stress between the substrate and the epitaxial layer. The second high-temperature AlN nucleation layer is disposed on the roughened first high-temperature AlN nucleation layer to further release the stress accumulated in the first high-temperature AlN nucleation layer. This invention solves the technical problem in the prior art where boron atoms diffuse from the silicon substrate to the epitaxial layer, resulting in significant stress between the silicon substrate and the epitaxial layer, leading to a decrease in the crystal quality of the epitaxial layer.

The utility model provides a reaction furnace and processing equipment, relates to the field of semiconductor or photovoltaic material processing, and solves the technical problem that boron atoms cannot be doped into silicon wafers due to gas leakage of the reaction furnace. The reaction furnace comprises a furnace tube assembly, wherein a first opening of the furnace tube assembly is communicated with a reaction cavity; the first flange assembly is connected with the end, provided with the first opening, of the furnace tube assembly, the first flange assembly is provided with a first gas channel and a second opening, and protective gas can pass through the first gas channel to form a gas curtain at the first opening; the second flange assembly is connected with the first flange assembly, and the second flange assembly is provided with a second gas channel and a third opening; and the furnace door can be connected with the second flange assembly and is configured to seal the third opening. By means of the structure, when the furnace tube assembly leaks, protective gas can be introduced into the first gas channel, the protective gas can form a protective gas layer, and oxygen molecules are prevented from making contact with a product.

The invention provides a semiconductor manufacturing method, which comprises providing a substrate, forming a silicon germanium epitaxial layer in the substrate, forming a first silicon layer on the silicon germanium epitaxial layer, wherein the first silicon layer is a pure silicon layer, and forming a second silicon layer on the first silicon layer, wherein the second silicon layer comprises a silicon layer doped with boron atoms.

Provided is a synthetic single crystal diamond containing conjugants each composed of one vacancy and one boron atom, wherein the concentration of boron atoms based on atom numbers is 0.1 ppm or more and 100 ppm or less.

The application provides a fused ring compound containing boron, nitrogen, sulfur atoms and a five-membered aromatic heterocycle, as shown in formula (I). Compared with the prior art, the application uses the fused ring compound containing boron, nitrogen, sulfur atoms and a five-membered aromatic heterocycle as a light-emitting material, which can realize the separation of HOMO and LUMO by using the resonance effect between boron atoms, nitrogen atoms and sulfur atoms, thereby realizing smaller ΔE ST and TADF effect, and meanwhile, the hybrid fused ring unit has a rigid skeleton structure, can reduce the relaxation degree of the excited state structure, thereby realizing a narrower half peak width; on the other hand, the five-membered aromatic heterocycle and different substituents can be introduced into the skeleton of the boron / nitrogen / sulfur hybrid fused ring unit, so that the lifetime and half peak width of the delayed fluorescence can be further adjusted.

To provide a resist composition having high sensitivity and being able to form a pattern with a low exposure amount. A resist composition containing an organic tin compound and an organic boron compound represented by the following formula. (In the formula, R1, R2, and R3 each independently represent an organic group that bonds to boron by a carbon atom, an oxygen-containing organic group that bonds to boron by an oxygen atom, or OH. The oxygen-containing organic group may contain a boron atom. Two groups selected from the group consisting of R1, R2, and R3 may link to form a ring structure.)

The invention discloses aluminum-based powder fuel with a grain boundary oxygen vacancy channel and a preparation method and application of the aluminum-based powder fuel, and particularly relates to the technical field of metal fuel and aluminum-based alloy powder fuel. The method comprises the following steps: heating and melting pure aluminum to form an aluminum melt; then, Al-RE intermediate alloy is added into the aluminum melt, and the total content of the rare earth element RE in the melt is adjusted to be 0.1-7 wt%; and finally, the uniformly mixed melt is subjected to controlled supersonic atomization and rapid solidification, and the aluminum-based alloy powder is obtained. According to the invention, after powder combustion, a rare earth oxide channel rich in oxygen vacancy defects is constructed at a crystal boundary, and then oxidative combustion is further promoted. Lattice distortion and in-situ solid solution of boron atoms are caused by the radius difference of double rare earth (Ce / La) atoms, so that the formation energy of oxygen vacancies is greatly reduced. In the combustion process, high-concentration oxygen vacancies form a high-speed oxygen transmission channel, barrier of a compact oxidation film is broken, oxygen can rapidly permeate into particle cores, and the burn-off rate and energy release efficiency of aluminum powder are remarkably improved.

The invention provides a boron-containing compound and application thereof. The structural formula of the boron-containing compound is shown as a formula (I). According to the invention, triptycene and triptycene-like compounds containing boron-nitrogen, boron-oxygen and other units are adopted as the light-emitting units, on one hand, the resonance effect between boron atoms and nitrogen, oxygen, sulfur and other atoms can be utilized to realize the separation of HOMO and LUMO so as to realize the TADF effect, and on the other hand, the large-plane parent nucleus unit can reduce the relaxation degree of an excited state structure, so that the light-emitting efficiency is improved. Therefore, the narrow half-peak width is realized; on the other hand, different substituent groups are introduced into a rigid framework, so that the delayed fluorescence lifetime and the half-peak width can be further adjusted.

One or more magnetic tunneling junction (MTJ) pillars are disposed on a substrate. The pillars have one or more magnetic reference layers and one or more magnetic free layers. The magnetic free layers have one or more external surfaces and are made of a magnetic free layer material containing atomic percentage amount of boron. A boron-containing encapsulation layer encapsulates the MTJ pillar(s) and is in direct contact with the magnetic free layer external surfaces. The boron-containing encapsulation layer contains an atomic percentage amount of boron greater than the magnetic free layer atomic percentage amount of boron. Embodiments of the boron-containing encapsulation layer contain at least 95 percent pure boron and are between 1 and 3 nanometers thick. Accordingly, the boron-containing encapsulation layer controls and limits the amount of boron diffusing out of the magnetic free layer across a boron diffusion interface formed between the magnetic free layer external surfaces and the boron-containing encapsulation layer. Alternative embodiments of boron-containing encapsulation layers and methods of making MTJ devices are disclosed.

It is an object of the present invention to provide a chemical solution that, when applied to an object to be treated, can suppress the occurrence of defects containing alkali metals and defects containing boron after the application to the object to be treated and that, when used as a washing solution for pipes, can suppress the occurrence of particle defects on the surface of a substrate supplied with a composition through the washed pipes. The chemical solution of the invention is a chemical solution containing propylene glycol monomethyl ether acetate and boron atoms. The content of propylene glycol monomethyl ether acetate is 80% by mass or more based on the total mass of the chemical solution, and the content of boron atoms is 0.001 to 100 ppt by mass based on the total mass of the chemical solution.

The present application relates to a boron neutron capture therapy system (100) and a method of operating the same, the boron neutron capture therapy system (100) including a neutron beam irradiation device (10), a treatment planning module (30), and a control module (40), wherein the neutron beam irradiation device (10) generates a neutron beam and irradiates the neutron beam to an irradiated body, the treatment planning module (30) sets a boron concentration for each voxel unit in a three-dimensional voxel prosthetic tissue model to generate a treatment plan, and the control module (40) controls the neutron beam irradiation device (10) to irradiate based on the treatment plan. The treatment planning module (30) sets corresponding boron concentration data for each voxel unit, and then combines it with medical image data to perform dose simulation to formulate a treatment plan, thereby making the distribution of boron atoms in the region of interest more consistent with the actual situation, improving the accuracy of model establishment and dose calculation, and ensuring the accuracy of the treatment plan, thereby guaranteeing the treatment effect.

Method for coating short fibers. The present invention relates to a method for coating short fibers, comprising: - the desizing of sieved silicon carbide short fibers, - the deposition, on the desizing short fibers, of an adhesion promoter made of a metal oxide ceramic material having pendant groups on its surface, the adhesion promoter being deposited by atomic layer deposition technique, and - the deposition, on the desizing short fibers coated with the adhesion promoter, of boron nitride by atomic layer deposition technique, comprising (a) the grafting of a first Lewis acid precursor comprising boron to the surface of the adhesion promoter by addition to the pendant groups at the boron atom, and (b) the reaction of the first precursor thus grafted with a second precursor comprising nitrogen to obtain boron nitride. Fig. 2.

The present application discloses an organic compound and a mixture, composition, and organic electronic device comprising the organic compound. The organic compound has a structure as shown in the general formula (1): the organic compound of the present application includes at least 3 nitrogen atoms and 2 boron atoms in the same rigid plane, and includes a non-aromatic cyclic group on the side, which well combines the high fluorescence quantum efficiency of the rigid plane and the advantages of flexible editing to reduce π-π stacking. The organic compound is used in organic electronic devices, especially as a luminescent material in the light-emitting layer of an organic electronic device, and can better improve the luminous efficiency and stability of this type of compound.

The disclosure provides a preparation method of a hexagonal boron nitride heterostructure, comprising: S1, performing a temperature rising operation on a dielectric substrate, and introducing ammonia into a deposition chamber; S2, sputtering a boron nitride target by an ion source, and depositing obtained nitrogen and boron atoms on the dielectric substrate to grow; S3, obtaining a hexagonal boron nitride heterostructure by cooling. The preparation method of the disclosure introduces ammonia through an auxiliary gas path to ensure the ideal stoichiometric ratio of the hexagonal boron nitride and realize the growth of the low-temperature hexagonal boron nitride; and direct growth of the hexagonal boron nitride on the dielectric substrate is realized, the transfer process is avoided, and the original properties of the dielectric substrate are changed, for example, the diamond is graphitized, at a higher growth temperature, which has a very important significance for the electronic and optoelectronic applications of the hexagonal boron nitride diamond heterostructure.

The application discloses an aluminum-based powder fuel with a grain boundary oxygen vacancy channel and a preparation method and application thereof, and particularly relates to the technical field of metal fuel and aluminum-based alloy powder fuel. The method comprises the following steps: heating and melting pure aluminum to form an aluminum melt; then adding an Al-RE intermediate alloy into the aluminum melt, and adjusting the total content of rare earth elements RE in the melt to be 0.1-7 wt%; finally, performing controlled supersonic atomization rapid solidification on the uniformly mixed melt to obtain an aluminum-based alloy powder. After the powder burns, a rare earth oxide channel rich in oxygen vacancy defects is constructed at the grain boundary, and the oxidation combustion is further promoted. The lattice distortion caused by the difference in atomic radii of double rare earth (Ce / La) and the in-situ solid solution of boron atoms greatly reduce the formation energy of oxygen vacancies. In the combustion process, high-concentration oxygen vacancies form a "high-speed oxygen transmission channel", break the barrier of the dense oxide film, and enable oxygen to quickly penetrate into the particle core, thereby significantly improving the burnout rate and energy release efficiency of the aluminum powder.

This invention discloses a method for preparing high sheet resistance shallow pn junction single-crystal silicon wafers based on rapid boron diffusion, comprising the following steps: S1: depositing a boron-containing precursor on the textured silicon wafer surface; S2: depositing a low-temperature oxide layer on the surface of the boron-containing precursor; S3: placing the silicon wafer with the deposited low-temperature oxide layer in a rapid thermal processing device, rapidly heating it to 1050-1350℃ at a heating rate of 5-200℃ / s, holding it at this temperature for 20-600s, and then rapidly cooling it to complete the diffusion and activation of boron atoms in the silicon wafer. This invention employs a combination of low-temperature deposition and rapid boron diffusion, which can significantly shorten the boron diffusion time, reduce energy consumption, and shorten the high-temperature processing time. It also suppresses the formation of oxygen precipitate defects at the source, eliminating problems such as black cores and black rings in batteries, and significantly improving carrier lifetime and material electrical performance.

The invention discloses boron-containing carbide ceramic for a high-temperature aerobic environment and a preparation method of the boron-containing carbide ceramic, and belongs to the technical field of carbide ceramic. The ceramic is (HfnTam) (CxBy), Hf and Ta are adopted as raw materials to prepare carbides, on the basis, boron carbide and boron oxide are added to serve as boron sources, designed carbon vacancies are filled with boron atoms, the crystal structure of the carbides is not changed, meanwhile, redundant oxygen brought by boron oxide is eliminated through boron carbide, and finally boron-containing carbides are formed. In the whole preparation process, powder is prepared only through one-time high-temperature treatment, the ceramic block is prepared through one-time high-temperature sintering, the preparation efficiency is higher, and the prepared boron-containing carbide ceramic block is high in density and shows high oxidation resistance.

The present disclosure provides a process for reducing the boron concentration in a semiconductor layer (12) of a semiconductor-on-insulator substrate (1), comprising: at least one thermal treatment cycle, each cycle including thermally oxidizing the semiconductor layer (12) to form an oxide layer (120) on the semiconductor layer (12), wherein boron atoms from the semiconductor layer (12) diffuse into the oxide layer (120) such that boron segregation causes the semiconductor layer (12) to be boron deficient at its interface with the oxide layer (120); removing the oxide layer (120); Including, thermally oxidizing includes increasing the temperature above a target thermal oxidation temperature in an inert atmosphere and then decreasing the temperature to the target thermal oxidation temperature to create a temperature gradient within the substrate to induce a higher rate of formation of the oxide layer (120) at the center of the semiconductor layer than at the edges; Regarding the process.

There is provided an AlN single-crystal substrate having a two-layer structure composed of an AlN single crystal as a whole, which is distinguishable into a first layer and a second layer in a thickness direction based on an impurity concentration. The AlN single-crystal substrate includes boron as an impurity, and a boron atom concentration in the first layer is 9.4×1018 cm−3 or more, and is at least 10 times a boron atom concentration in the second layer.

To provide a light-emitting element with a low driving voltage. [Solution] A light-emitting element having an anode, a cathode, and a first layer and a second layer provided between the anode and the cathode, wherein the first layer is a layer containing compound (B) and two or more compounds represented by formula (T-1), and compound (B) is a boron atom, an oxygen atom, a sulfur atom, a selenium atom, sp 3 A compound having a fused heterocyclic skeleton (b) containing at least one selected from the group consisting of carbon atoms and nitrogen atoms in the ring, wherein the second layer is a layer containing a crosslinked compound having a crosslinking group, and of the two or more compounds represented by formula (T-1), at least two compounds contain Ar T2 However, if each is independently a group obtained by removing one or more hydrogen atoms from a pyrimidine, then the at least two compounds are (i) light-emitting elements having a molecular weight difference of 80 or more. TIFF2026053954000076.tif20170

This invention discloses a method for growing highly mobile, heavily doped single-crystal diamond using a solid-state boron source. The aim of this invention is to address the problem that existing MPCVD boron doping processes introduce other non-doping source impurities, making it difficult to achieve high-concentration boron doping. The method for growing heavily doped single-crystal diamond involves: 1. Polishing the surface of a single-crystal diamond substrate; 2. Heating the diamond substrate at high temperature in a strong oxidizing mixed acid; 3. Placing the single-crystal diamond substrate on a solid boron sheet and introducing a mixture of hydrogen and methane gas to grow a boron-doped diamond film on the substrate surface; 4. Performing a final surface cleaning. This invention employs microwave plasma chemical vapor deposition (PCCVD) using a solid boron sheet as the boron source. The carbon atoms provided by methane promote the release of boron atoms from the solid boron sheet, effectively facilitating the entry of doped atoms into the diamond lattice, thus achieving the preparation of high-quality, high-mobility doped single-crystal diamond with a boron doping concentration of 10⁻⁶. 20 cm ‑3 ~10 21 cm ‑3 .

The application belongs to the technical field of organic optoelectronic material preparation and application, and discloses a boron-nitrogen heterocyclic derivative based on a fusion donor, preparation and application thereof.The organic material takes a boron-nitrogen heterocyclic ring containing different numbers of ring-forming boron atoms as a core, and is obtained by extending the molecular skeleton through the conjugation and ring of the peripheral chemical groups of the fusion donor.The boron-nitrogen heterocyclic derivative based on the fusion donor has excellent light and thermal stability, good electrochemical stability, and excellent electroluminescent performance, and can be applied to an organic electroluminescent device as a host material or a sensitizing agent material or a luminescent material, so that higher device efficiency, stability and color purity can be obtained.