Preparation method of hexagonal phase boron nitride film

A technology of phase boron nitride and boron nitride, which is applied in the field of preparation of boron nitride thin films, can solve problems such as potential safety hazards, and achieve the effects of good safety, excellent insulation properties and flatness, and simple preparation methods

Active Publication Date: 2013-04-10
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the main method of preparing two-dimensional hexagonal boron nitride films is chemical vapor deposition (CVD) ["Toward the controlled synthesis of hexagonal boron nitride films" ACS Nano 2012, 6, 6378], CVD method is at a certain temperature Decompose a single gas containing nitrogen and boron atoms, or a gas containing nitrogen and boron atoms respectively to form an h-BN film on the substrate. Since the boron-containing gas is a harmful gas, two-dimensional hexagonal nitride is prepared by CVD. Boron films present safety hazards

Method used

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  • Preparation method of hexagonal phase boron nitride film
  • Preparation method of hexagonal phase boron nitride film

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Embodiment 1

[0038] Such as figure 1 shown in 1×10 -8 Under the background vacuum of Pa, hexagonal boron nitride thin films were prepared on copper sheets by electron beam deposition. Firstly, the copper sheet ( figure 1 In part a) heat treatment for 2 hours; then in N 2 / Ar (50sccm / 80sccm) atmosphere (working pressure is about 2×10 -2 Pa), and when the substrate temperature was 850°C, the boron powder was evaporated by the electron beam from the electron gun, and the boron atomic flow was evaporated at a rate of 1.0nm / min ( figure 1 middle part b); keep the same temperature and atmosphere conditions, heat treatment for 5 minutes ( figure 1 Part c in the middle), and finally lower the temperature to 20°C at a cooling rate of 200°C / min to obtain a hexagonal boron nitride film with uneven layers (scanning electron microscope image as image 3 shown).

Embodiment 2

[0040] at 1×10 -6 Under the background vacuum of Pa, the graphene film / SiO 2 Hexagonal boron nitride film was prepared on the substrate composed of / Si: under the condition of the substrate temperature of 20 ℃, the N 2 / Ar (20sccm / 50sccm), the working pressure is about 10Pa, and the boron nitride target is sputtered at a sputtering rate of about 0.01nm / min; then in the same atmosphere, the temperature is raised to 1100°C for 45 minutes; finally With the cooling rate of 400 DEG C / min, the temperature is reduced to 20 DEG C, thereby obtaining a single-layer hexagonal phase boron nitride film on the graphene film (Raman spectrum such as Figure 4 shown in curve a).

Embodiment 3

[0042] at 2×10 -6 Under the background vacuum of Pa, the method of magnetron sputtering was used on Ni / Al 2 o 3 Hexagonal boron nitride thin films were prepared on substrates composed of: the NH 3 / Ar (20sccm / 100sccm) working pressure is about 100Pa atmosphere, under the condition that the substrate temperature is 880°C, sputter the boron target at a sputtering rate of about 0.6nm / min; then lower the temperature at 150°C / min The temperature is lowered to 20°C, and about 10 layers of hexagonal boron nitride films are obtained on graphene (Raman spectroscopy such as Figure 4 shown in curve b).

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Abstract

The invention discloses a preparation method of a hexagonal phase boron nitride film. The preparation method comprises the following steps: by a physical vapor deposition method, providing boron atoms by a solid boron source, and forming the hexagonal phase boron nitride film on a substrate, wherein the deposition speed of physical vapor deposition is 0.01 nm / min-20 nm / min, and in the film forming process, the substrate temperature is controlled at 20-1600 DEG C; and the temperature is reduced to room temperature at a speed of 10-400 DEG C / min. when the hexagonal phase boron nitride film is prepared by the preparation method, the solid boron source is used, so that the safety is high, and the preparation method is simple, and easy to implement; the prepared hexagonal phase boron nitride film consists of 1-200 hexagonal phase boron nitride unit layers; and the two-dimensional hexagonal phase boron nitride film prepared by the preparation method has excellent insulating property and flatness and can be used for improving performance of a graphene optoelectronic device.

Description

technical field [0001] The invention relates to a method for preparing a boron nitride film, in particular to a method for preparing a two-dimensional hexagonal phase boron nitride film grown by a solid boron source. Background technique [0002] The III-V compound boron nitride (BN) is similar to the C of the IV group, and has sp 3 The phase composed of bonds, and sp similar to the graphite structure 2 constituted phase. There are four main isomers, which are the cubic phase boron nitride (cubicboron nitride: c-BN) corresponding to the zinc blende structure corresponding to diamond, and the hexagonal phase nitride corresponding to the wurtzite structure corresponding to hexagonal diamond. Boron (wurtzite boron nitride: w-BN), hexagonal boron nitride (h-BN) corresponding to hexagonal graphite, rhombohedral boron nitride (r- BN). Among them, h-BN and r-BN are layered two-dimensional materials, and the boron and nitrogen atoms in the same layer are separated by sp 2 Bondi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/54
Inventor 徐明生陈红征
Owner ZHEJIANG UNIV
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