The invention relates to a semiconductor meso pore material of multivariate metal oxide, which has a general formula of AxByOz, wherein, A is equal to Ca, Sr, Ba, Na, K, La, Fe, Ni, Zn, Al, Si and so on, and B is equal to Ti, Ta, W, Fe, Co, Al, Si, In, Bi and so on; the condition that A is equal to Si while B is equal to Al is not included; specific surface area of the meso pore material is 10 to1,000 m2g-1; a pore wall of the meso pore is in a crystal state and adjustable aperture is between 2 nm to 50 nm; a pore channel shapes like a worm, cubic phase and hexagonal phase and so on. The material is synthesized through the following steps: 1) inorganic metal salt solution is prepared; 2) metal alkoxide salt solution is prepared; 3) the two solutions are mixed and stirred to obtain transparent or translucent solution; 4) certain amount of embedded segment surfactant is added into the solution and then the mixture is stirred until clarified; 5) the solution with the surfactant which isobtained in the step 4) is parched to obtain xerogel; 6) the xerogel is thermally processed; 7) the obtained xerogel is roasted; 8) impurities of the roasted sample are removed in acid or alkali solution and then the aperture is regulated.