The invention discloses a two-dimensional
semiconductor transistor with a
gate dielectric cooperatively inducing channel p-type conduction, and belongs to the technical field of
semiconductor devices. The device mainly solves the technical problem that stable and high-performance p-type conduction of a two-dimensional n-type
semiconductor material (such as InSe) is difficult to realize. According to the technical scheme, the method is characterized in that a two-dimensional antiferromagnetic insulating material CrOCl is adopted as a gate medium and a p-type induction layer at the same time, effective hole
doping of a channel material is achieved through van der Waals interface charge transfer between the CrOCl and a two-dimensional n-type semiconductor channel layer (such as InSe), and a stable p-type
conductive channel is formed through induction. The device structure comprises a substrate, a gate
electrode, a CrOCl layer, a semiconductor channel layer and a source / drain
electrode from bottom to top. A traditional
doping technology is not needed, simple construction of the p-type
transistor is achieved through material and structure innovation, and a core device scheme is provided for a complementary
metal oxide semiconductor (
CMOS) logic circuit based on a two-dimensional semiconductor.