263results about "Inorganic insulators" patented technology

In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of the silicon surface in advance, and the film formation method removes the hydrogen by exposing the silicon surface to a first inert gas plasma. Thereafter a silicon compound layer is formed on the surface of the silicon gas by generating plasma while using a mixed gas of a second inert gas and one or more gaseous molecules, such that there is formed a silicon compound layer containing at least a pat of the elements constituting the gaseous molecules, on the surface of the silicon gas.

The dielectric-forming composition according to the invention is characterized by consisting of:composite particles for dielectrics in which part or all of the surfaces of inorganic particles with permittivity of 30 or greater are coated with a conductive metal or a compound thereof, or a conductive organic compound or a conductive inorganic material; and(B) a resin component constituted of at least one of a polymerizable compound and a polymer.In addition, another dielectric-forming composition according to the invention is characterized by containing:ultrafine particle-resin composite particles composed of (J) inorganic ultrafine particles with the average particle size of 0.1 μm or smaller, and (B) a resin component constituted of at least one of a polymerizable compound and a polymer, wherein part or all of the surfaces of the inorganic ultrafine particles (J) are coated with the resin component (B), and the ultrafine particle-resin composite particles contain 20% by weight or more of the inorganic ultrafine particles (J); andinorganic particles with the average particle size of 0.1 to 2 μm and permittivity of 30 or greater, or inorganic composite particles in which a conductive metal or a compound thereof, or a conductive organic compound or a conductive inorganic material is deposited on the part or all of the surfaces of the inorganic particles.

A method for the deposition of a thin film of a pre-determined composition e.g. a phosphor, onto a substrate, in which the composition is a ternary, quaternary or higher composition, especially a composition selected from the group consisting of thioaluminates, thiogallates and thioindates of at least one element from Groups IIA and IIB of the Periodic Table. In the embodiment, the method comprises placing a pellet of at least one sulfide on a first source and placing a pellet of at least one sulfide on a second source, with one pellet containing dopant. Vapor deposition onto the substrate is effected with separate electron beams. The rate of vaporizing of the sulfides is monitored with separate shielded coating rate monitors. The temperature of the sources is controlled to obtain the composition on the substrate. The method is particularly used for deposition of ternary or quaternary phosphors on substantially opaque substrates in electroluminescent devices.

An insulating sheet includes a resin sheet, and an insulating layer disposed on the resin sheet, wherein the insulating layer includes an inorganic insulating layer, and the inorganic insulating layer includes first inorganic insulating particles which have a particle size of not less than 3 nm and not greater than 110 nm and which are bonded to each other.

The present invention facilitates the thermal conductivity of fabrics by surface coating of the fabrics with high thermal conductivity materials 6. The fabrics may be surface coated when they are individual fibers or strands 4, bundles of strands, formed fabric or combinations therefore. A particular type of fibrous matrix used with the present invention is glass. Some fabrics may be a combination of more than one type of material, or may have different materials in alternating layers. HTC coatings of the present invention include diamond like coatings (DLC) and metal oxides, nitrides, carbides and mixed stoichiometric and non-stoichiometric combinations that can be applied to the host matrix.