79 results about "Gas plasma" patented technology

The invention relates to the technical field of electric flame stoves, in particular to an electric flame stove with low nitrogen oxide emission and an operation method of the electric flame stove. According to the technical scheme, the device comprises a gas supply unit, a discharge cooking range and a plasma power supply and is used for preparing and supplying high-purity nitrogen; the discharge cooking range is communicated with the gas supply unit and is used for receiving the high-purity nitrogen as working gas; and the plasma power supply is electrically connected with the discharge cooking range and is used for providing discharge electric energy for the discharge cooking range. According to the invention, high-purity nitrogen is used as a discharge medium instead of air, so that the generation of nitrogen oxides and ozone is inhibited from the source, and the pollutant discharge is obviously reduced; meanwhile, the system is highly compatible with an existing cooking range structure, and can adapt to various discharge forms without modification; the air compressor, the nitrogen making machine, the power supply and other components are integrated in the stove body, so that the miniaturization and integration of the equipment are realized; and in cooperation with gas storage pressure stabilization and flow regulation control, the stability of system operation and the simplicity and convenience of operation are ensured.

The invention relates to the technical field of sealing materials, and particularly discloses a modified RPTFE gasket containing SILCAR62XT resin and a preparation method of the modified RPTFE gasket. The composition of the gasket mainly comprises RPTFE (Resin Polytetrafluoroethylene) resin, SILCAR62XT Dupont resin, a 5B component, fluorinated graphene and an interface bridging agent. The preparation method mainly comprises the following steps: performing fluorine-containing gas plasma activation on the compound filler to improve the interfacial compatibility; uniform dispersion of all the components is realized through ultrasonic-assisted mixing and melting granulation; multi-section gradient pressurization hot press molding is combined with a programmed slow cooling and annealing process, so that the compactness of the material is optimized, and internal stress is eliminated. The gasket is suitable for complex sealing working conditions of high temperature, high pressure, strong corrosion and wide temperature range vibration, and the creep resistance, the chemical stability and the fatigue resistance are remarkably improved; the preparation method is stable in process, is beneficial to obtaining products with high dimensional precision and uniform structure, and is suitable for large-scale production.

The present invention relates to a substrate processing apparatus, and the substrate processing apparatus according to one embodiment of the present invention comprises: a chamber having a processing space therein; a substrate support unit disposed in the processing space and configured to support a substrate; a gas supply unit for supplying a gas to the processing space; a spray head assembly for spraying the supplied gas to the processing space; and a plasma generating unit for plasma-converting the gas supplied to the processing space, the showerhead assembly including a fluid containing a magnetic component.

The application belongs to the technical field of carbonyl sulfur hydrolysis catalysts, and discloses a high-efficiency sulfur-resistant catalyst for carbonyl sulfur hydrolysis, a preparation method and application thereof.The preparation method comprises the following steps: (1) preparing a porous ceramic carrier containing alumina, titanium dioxide and zirconium dioxide; (2) in-situ growing a metal organic framework material containing lanthanum, bismuth and cerium on the surface of the porous ceramic carrier by using a solvothermal method; (3) performing a calcination treatment on the porous ceramic carrier loaded with the metal organic framework material in an oxygen-containing atmosphere to obtain a catalyst precursor; and (4) performing a reducing gas plasma bombardment treatment on the catalyst precursor to obtain the high-efficiency sulfur-resistant catalyst.The high-efficiency sulfur-resistant catalyst has high-efficiency low-temperature activity, excellent sulfur resistance and long service life.

To improve the barrier properties at the interface between the substrate and the graphene film. [Solution] The film formation method includes a loading step, a first step, and a second step. The loading step involves loading the substrate into the processing container. The first step involves forming an amorphous or microcrystalline interface layer on the substrate using a plasma of a first mixed gas containing a carbon-containing gas. The second step involves forming a graphene film on the interface layer using a plasma of a second mixed gas containing a carbon-containing gas.

A method for depositing crystalline semiconductors onto a substrate is provided. In this method, an electrical voltage is applied between a metallic sputtering target and the anode of a magnetron sputtering unit to ignite a magnetron discharge. This discharge causes a particle flux from the sputtering target to the substrate and excites the reactive gas to an initial quantity of activated reactive gas plasma, resulting in the epitaxial growth of a crystalline semiconductor on the substrate.In this process, during the deposition of a semiconductor on the substrate, an additional power input is implemented into the reactive gas plasma, which excites the reactive gas to a second quantity of activated reactive gas plasma that is higher than the first quantity of activated reactive gas plasma, but which keeps the particle flux from the sputter target to the substrate the same or increases only disproportionately less than the increase in the first quantity of activated reactive gas plasma compared to the second quantity of activated reactive gas plasma.

To provide a semiconductor manufacturing apparatus capable of removing an oxide film by dry cleaning.SOLUTION: According to an embodiment, a semiconductor-manufacturing apparatus includes a chamber 2 used for forming an oxide film, a susceptor 3 that is provided in the chamber and on which a substrate is placed, at least one supply pipe P1 for supplying a gas to the chamber, an exhaust pipe PP3 for exhausting a gas from the chamber, and a control unit 12 that controls supplying of a first source gas, an oxidizing gas, a reducing gas activated by plasma, and a first halide gas activated by plasma to the chamber and exhausting from the chamber.SELECTED DRAWING: Figure 1

The invention relates to a cathode part for a device for thermal spraying, in particular for atmospheric plasma spraying and / or protective gas plasma spraying and / or vacuum plasma spraying, with a base body having a longitudinal axis, with a powder channel extending along the longitudinal axis for guiding powder particles from an input side of the cathode part to an output side of the cathode part through the cathode part.

The gas analyzer (1) comprises a sample chamber (40) into which a sample gas (9) to be measured flows, a plasma generation circuit (10) that generates plasma (8) in the sample chamber (40), and an analyzer 30 that analyzes the sample gas via the plasma (8) generated in the sample chamber. The plasma generation circuit (10) includes a plasma induction circuit (13) and an RF power supply circuit (11) configured to supply RF power to the plasma induction circuit. The plasma induction circuit is directly incorporated as at least part of the resonant components of the RF power supply circuit.

Disclosed are a plasma reactor, a gas conversion apparatus, and a gas conversion method. The gas conversion apparatus includes a plasma reactor for converting a processing target gas into a converted gas. The plasma reactor includes a ground electrode forming an inner wall of a reaction space and a high-voltage electrode facing the ground electrode inside the reaction space and generating an arc discharge. The high-voltage electrode has a taper shape including an enlarged portion, a reduced portion, and a boundary portion between the enlarged portion and the reduced portion. The reaction space includes a gas supply region between the enlarged portion and the inner wall, a discharge region where the discharge occurs between the reduced portion and the inner wall, and a connection region between the boundary portion and the inner wall and connecting the gas supply region to the discharge region. The processing target gas, a plasma driving gas, and an auxiliary gas are supplied to the gas supply region through at least one gas inlet.

The invention discloses a plasma activation bonding method and system for chip three-dimensional packaging. The plasma activation bonding method comprises the steps of chip pretreatment, plasma multi-stage activation, precise bonding and bonding post-treatment. Impurities on the bonding surface of the chip are removed through multi-step cleaning, then inert gas plasma etching activation and reactive gas plasma modification activation are carried out in sequence, then precise bonding is carried out in a controllable environment, residual stress is eliminated through annealing, and airtightness is detected. The system comprises a pretreatment module, a plasma activation module, a bonding module and a post-treatment module, and the integrated execution of the process is realized. According to the method, the problems of weak interface bonding force, large residual stress, poor airtightness and the like of a traditional process are solved, the bonding reliability and the product consistency are improved, the strict requirements of high-end chip packaging are met, and the method has high industrialization value.

The invention belongs to the technical field of high-purity metal purification, and provides a method for deeply purifying high-purity indium and gallium by using microwave plasma and ultra-high-purity indium and gallium. The method comprises the following steps: placing high-purity indium or high-purity gallium in a vacuum reaction chamber, vacuumizing and carrying out preheating treatment; reaction gas is introduced into the vacuum reaction chamber, and multi-stage plasma coupling is excited through a multi-element power source; and gas products are collected through a condensation system. According to the method, the low-temperature characteristic and diversity of microwave plasma are utilized, the occurrence form of impurities such as boron and phosphorus in high-purity indium and gallium is changed through regulation and control of gas / plasma under the medium-low temperature condition, deep separation of boron and phosphorus in high-purity indium and gallium is carried out, the removal efficiency of boron and phosphorus is improved, and the content of boron and phosphorus is reduced to ppb level; the purity of the ultra-pure indium and gallium can reach 5N5 grade or above, the direct recovery rate is increased to 99% or above from 92% of a traditional method, and the method is suitable for industrial production of electronic-grade and semiconductor-grade high-purity metal.

The invention discloses a closed growth method of a high-purity laser-damage-resistant fluoride crystal, and relates to the technical field of crystal growth. The preparation method comprises the following steps: treating fluoride powder with an HF solution, and performing F2 high-temperature roasting purification; growing crystals in a Bridgman furnace under the assistance of a uniform magnetic field with proper intensity; and finally, processing the crystal by using CF4 and O2 mixed gas plasma to eliminate crystal surface damage and form a fluorine-rich passivation layer. Heat convection in the melt can be inhibited through assistance of the magnetic field, the crystallization process is kept stable, the impurity content and dislocation density of the crystal can be effectively reduced, the laser damage resistance of the crystal is improved, and the method is suitable for the high-end optical field.

Provided is a surface modification method for using plasma of a treatment gas to modify a bonding surface of a substrate to be bonded to another substrate, the surface modification method comprising a first adjustment step, an evacuation step, a second adjustment step, and a modification step. In the first adjustment step, the moisture content in a treatment container that can accommodate the substrate is adjusted by supplying a humidified gas at a first flow rate into the treatment container. In the evacuation step, the inside of the treatment container is evacuated after the first adjustment step. In the second adjustment step, the moisture content in the treatment container is adjusted by supplying the humidified gas into the treatment container at a second flow rate greater than the first flow rate. In the modification step, after the second adjustment step, the bonding surface of the substrate is modified by generating a plasma of the treatment gas in the treatment container.

Embodiments of the present disclosure generally relate to methods of plasma curing a dielectric material layer formed on a substrate. More specifically, the methods disclosed herein utilize a xenon (Xe) containing gas to generate a plasma that allows for greater dielectric compositional modulation. In some embodiments, a method of curing a substrate includes depositing a dielectric film onto a substrate to form a dielectric layer on a surface of a substrate, and performing a plasma cure operation on the formed dielectric layer. The plasma cure operation includes generating a plasma over a surface of the formed dielectric layer by delivering a RF power to a plasma process gas. The plasma process gas include Xe and H2.

A substrate processing method for forming a carbon-containing film that is inhibited from film peeling due to thermal treatment is provided. The substrate processing method includes: preparing a substrate having a foundation film; forming a carbon-containing film having a film density of 2 g / cm3 or greater on the foundation film by forming a plasma of a processing gas containing a carbon-containing gas; and subjecting the substrate on which the carbon-containing film is formed to thermal treatment. In the forming of the carbon-containing film, for a first time from a start of the forming of the carbon-containing film, an ion energy higher than the ion energy during a second time from an end of first time is supplied to the substrate.

The invention relates to an air-breathing electric propulsion system ground test system and method, and belongs to the field of ultra-low orbit space electric propulsion, and the system comprises a spiral wave plasma source, an incoming flow parameter measurement device, a tested air-breathing electric propulsion system, a micro-thrust frame, a vacuum system, a gas cylinder and a micro-thrust frame measurement system. A gas cylinder is used as a gas source to generate simulated incoming flow through a spiral wave plasma source, the simulated incoming flow enters a tested air-breathing electric propulsion system, the thrust of the tested air-breathing electric propulsion system is calculated by measuring net thrust, and then specific impulse is calculated. The spiral wave plasma source is used for generating rarefied gas plasma incoming flow equivalent to neutral gas incoming flow, incoming flow with different track heights and different component contents can be simulated by adjusting flow, power, magnetic field intensity and the like, and performance verification of the air suction type electric propulsion system is achieved by measuring net thrust.

According to one embodiment, a semiconductor manufacturing apparatus includes a chamber that is used for deposition of an oxide film, a susceptor that is provided in the chamber and on which a substrate is placed, at least a supply pipe that supplies a gas to the chamber, an exhaust pipe that exhausts the gas from the chamber, and a controller that is configured to control supply of each of a first source gas, an oxidizing gas, a reducing gas activated by plasma, and a first halide gas activated by plasma to the chamber, and gas exhaust from the chamber.

The plasma processing method includes a step a1), a step a2), and a step a3). In the step a1), the first gas and the second gas are converted into plasma in the chamber, thereby coating the surface of the component in the chamber with a conductive film. In step a2), a substrate is carried into a chamber. In the step a3), in a state where the surface of the member in the chamber is coated with a conductive film, the substrate is processed by plasma-converting the third gas in the chamber. In addition, the first gas contains at least one of carbon, silicon and germanium, and the second gas contains at least one of boron, nitrogen, phosphorus and arsenic.

The utility model discloses an adjustable gas distribution plasma combustion cavity which comprises a combustion cavity body and an adjustable gas distribution ring cavity. The adjustable gas distribution ring cavity is arranged around the plasma torch, a plurality of adjustable gas distribution nozzles are arranged on the outer wall of the adjustable gas distribution ring cavity in the circumferential direction in an array mode, and the adjustable gas distribution nozzles communicate with the adjustable gas distribution ring cavity in a movable connection mode through movable connection communicating pieces, so that the adjustable gas distribution nozzles can be driven by matched angle adjustment driving parts to adjust the gas injection angle alpha. Gas distribution can be dynamically optimized by adjusting the angle of the gas distribution nozzle, so that the tail gas plasma high-temperature treatment device is suitable for different tail gas flows and components, and the tail gas plasma high-temperature treatment efficiency is improved.

The invention provides a solid waste-based high-temperature heat storage material and a gradient coating-multi-field synergistic microwave uniform sintering method thereof, and belongs to the technical field of preparation of high-temperature heat storage materials. The method comprises the following steps: adding a polyvinyl alcohol pore-forming agent into a solid waste matrix, carrying out vacuum drying after ball milling, and pressing to obtain a green body; carrying out heat treatment on the green body in a holding furnace through an in-situ reaction synthesis method, and naturally cooling to room temperature to prepare a pre-sintered material; carrying out modification treatment on the surface of the pre-sintered material by adopting Ar / O2 mixed gas plasma, and forming a plasma modified functional layer on the surface of the pre-sintered material; carrying out gradient coating on the surface of the plasma modified functional layer to form an MgO / SiC coating layer; and carrying out microwave sintering treatment on the gradient coated material to obtain the solid-waste-based high-temperature heat storage material. Through the gradient coating layer structural design and in combination with multi-mode microwave field dynamic regulation and control and a temperature-power closed-loop control system, not only is the wave absorbing performance of the material optimized, but also the matching of the microwave penetration depth and the thermal diffusion rate is ensured.

The invention belongs to the technical field of carbonyl sulfide hydrolysis catalysts, and discloses an efficient sulfur-resistant catalyst for carbonyl sulfide hydrolysis as well as a preparation method and application of the efficient sulfur-resistant catalyst. The preparation method comprises the following steps: (1) preparing a porous ceramic carrier containing aluminum oxide, titanium dioxide and zirconium dioxide; (2) growing a metal organic framework material containing lanthanum, bismuth and cerium on the surface of the porous ceramic carrier in situ by adopting a solvothermal method; (3) roasting the porous ceramic carrier loaded with the metal organic framework material in an oxygen-containing atmosphere to obtain a catalyst precursor; and (4) carrying out reducing gas plasma bombardment treatment on the catalyst precursor to obtain the efficient sulfur-resistant catalyst. The high-efficiency sulfur-resistant catalyst has high-efficiency low-temperature activity, excellent sulfur resistance and long service life.

The invention relates to a cathode part for a device for thermal spraying, in particular for atmospheric plasma spraying and / or protective gas plasma spraying and / or vacuum plasma spraying, comprising a main body having a longitudinal axis, a powder channel extending along the longitudinal axis for conducting powder particles through the cathode part from an input side of the cathode part to an output side of the cathode part.

Provided is a plasma processing apparatus for removing a film formed on a peripheral edge of a substrate using plasma, comprising: a processing chamber configured to be depressurized and accommodating the substrate; a substrate support located in the processing chamber and configured to support the substrate; an injection head located above the substrate support and configured to inject a gas toward the substrate supported by the substrate support; a plasma supply mechanism configured to supply plasma to the peripheral edge of the substrate supported by the substrate support; and one or more partition plates that divide a space between the substrate supported by the substrate support and the injection head into a plurality of regions along a circumferential direction of the substrate, wherein the injection head injects the gas with an adjusted flow rate for each of the regions.

[Problem] To provide a method for manufacturing a semiconductor package including a bonding step for electrically connecting an electrode of a semiconductor chip fixed on a package substrate and an electrode terminal provided on the package substrate. [Solution] A first plasma processing step by hydrogen plasma or water vapor plasma for removing an oxide film on the surface of an electrode of a semiconductor chip and / or an electrode terminal is performed before a bonding step, and a second plasma processing step by inert gas plasma for removing a solder film that is generated in the first plasma processing step is performed after the first plasma processing step.

The invention belongs to the technical field of zinc-bromine flow batteries, and particularly relates to a modified carbon-plastic bipolar plate for a zinc-bromine flow battery, a preparation method of the modified carbon-plastic bipolar plate and the zinc-bromine flow battery, and the zinc-bromine flow battery. Carrying out surface modification treatment on the clean carbon-plastic bipolar plate by using preset gas plasma so as to introduce an oxygen-containing functional group on the surface of the clean carbon-plastic bipolar plate and form a preset microstructure structure to obtain a modified carbon-plastic bipolar plate; wherein the preset gas plasma is plasma-state air, plasma-state oxygen or plasma-state air-oxygen mixed gas; according to the method for modifying the carbon-plastic bipolar plate of the zinc-bromine flow battery through a plasma surface treatment technology, collaborative optimization of hydrophilicity, electrochemical performance and zinc deposition behavior is realized, the problem of battery failure caused by zinc dendrites is solved, the cycle life of the battery is prolonged, and the energy efficiency of the battery is improved.

To more easily manufacture an optical filter having a thin film on a substrate that has a continuous film thickness gradient in a specific direction of the substrate. [Solution] A first aspect of the method for manufacturing an optical filter according to the present invention involves arranging a flat target material on a negative electrode facing a positive electrode in a chamber, arranging a flat substrate at a predetermined position in the chamber such that the angle between a straight line connecting one end of the substrate and the furthest end of the target material from the substrate and one main surface of the substrate is 90° or more and 180° or less, the angle between a straight line connecting the one end of the substrate and the closest end of the target material from the substrate and the main surface is 90° or more and 180° or less, and the angle between the surface of the target material and the main surface is 60° or more, introducing an inert gas into the chamber, and using the plasma of the inert gas generated by applying a predetermined voltage between the positive electrode and the negative electrode, particles of the target material are attached to the main surface of the substrate.

Plasma lysis device (100; 100') for corona discharge-induced splitting of hydrogen-containing gases (10) into molecular hydrogen (12) and at least one by-product (14; 14'), comprising: - a gas-tight reaction chamber (18; 18'), - a gas supply line (20) for the hydrogen-containing gas (10) into the reaction chamber (18; 18'), - exactly one plasma electrode (22; 22') for generating corona discharges (32) in the reaction chamber (18; 18') by means of a high-frequency alternating voltage and - a gas outlet (24) for the molecular hydrogen (12) from the reaction chamber (18; 18'), wherein the gas-tight reaction chamber (18; 18') is enclosed by a wall (28) which is configured to electrically insulate the plasma electrode (22; 22') from an outside of the wall (28), and wherein the plasma electrode (22; 22') is connected to a high-frequency generator (200) to generate the high-frequency alternating voltage.

The invention discloses a carbon nanotube coating aging protection process, and belongs to the technical field of material protection. Comprising the following four core steps: gradient interface modification pretreatment, preparation of a double-structure inorganic protective layer, construction of a temperature-sensitive organic protective layer and interface synergistic reinforcement post-treatment. An interface reinforcement transition layer is constructed through argon, oxygen and carbon tetrafluoride mixed gas plasma treatment and aminated carbon quantum dot synergistic modification; the preparation method comprises the following steps: preparing a double-structure inorganic protective layer by combining magnetron sputtering and sol coating, constructing a temperature-sensitive organic protective layer by using a polyvinyl fluoride-acrylate copolymer containing a phase change microcapsule and a compound anti-ultraviolet agent, and finally promoting an inorganic-organic interface to form a Si-O-C covalent bond through ultraviolet-heat synergistic treatment. Through multi-step collaborative design, the problems that in a traditional technology, a carbon nano tube coating is single in protection function and rapid in aging failure are solved, the aging speed is reduced after treatment, and the heat conduction and spectral absorption core performance of the carbon nano tube is stably reserved.

The present invention provides a method of cleaning a cavity for forming a perovskite compound, the method comprising a step of exposing an interior of the cavity to a hydrogen (H)-containing gas plasma and a step of exposing the interior of the cavity to an oxygen (O)-containing gas plasma, in which after the step of exposing the interior of the cavity to the hydrogen (H)-containing gas plasma, the oxygen (O)-containing gas plasma is exposed to the interior of the cavity. A step of exposing the inside of the cavity to an oxygen (O)-containing gas plasma is performed.