445 results about "Gas plasma" patented technology

Methods of etching HAR features in a dielectric layer are described. In one embodiment, a substrate is provided into an etch chamber. The substrate has a patterned mask disposed on a dielectric layer formed thereon where the patterned mask has openings. A gas mixture is provided into the etch chamber, the gas mixture includes CO, O₂, a fluorocarbon gas, and an optional inert gas. A plasma is formed from the gas mixture. Features are etched in the dielectric layer through the openings in the presence of the plasma

A method for forming a single-phase multi-element film on a substrate in a reaction zone by PEALD repeating a single deposition cycle. The single deposition cycle includes: adsorbing a precursor on the substrate in the absence of reactant and plasma; decomposing the precursor adsorbed on the substrate by an inert gas plasma; and reacting the decomposed precursor with a reactant gas plasma in the presence of the inert gas plasma. The multi-element film contains silicon and at least two non-metal elements constituting a matrix of the film, the precursor contains silicon and optionally at least one non-metal element to be incorporated in the matrix, and the reactant gas contains at least one non-metal element to be incorporated in the matrix.

Depositing one or more layers of material on a substrate using atomic layer deposition (ALD) followed by surface treating the substrate with radicals of inert gas before subjecting the substrate to further deposition of layers. The radicals of the inert gas appear to change the surface state of the deposited layer to a state more amenable to absorb subsequent source precursor molecules. The radicals of the inert gas disconnect bonding of molecules on the surface of the substrate, and render the molecules on the surface to have dangling bonds. The dangling bonds facilitate absorption of subsequently injected source precursor molecules into the surface. Exposure to the radicals of the inert gas thereby increases the deposition rate and improves the properties of the deposited layer.

An apparatus and method for plasma enhanced monolayer (PEM) processing, wherein excited species from a non-condensable gas plasma are delivered to a substrate surface during the reaction of a chemical precursor with a previously chemisorbed monolayer on the substrate surface; the excited species lower the activation energy of the monolayer formation reaction and also modulate the film properties. In preferred embodiments a process reactor has linear injectors arranged diametrically above a substrate and reactive gases are sequentially injected onto the substrate surface while it is being rotated. The reactor can be operated in pulse precursor and pulsed plasma, constant precursor and constant plasma modes, or a combination thereof.

A processing method that uses process gas plasma that contains at least hydrogen to terminate dangling bonds in an object that at least partially contains a silicon system material includes the steps of placing the object on a susceptor in a process chamber that includes a dielectric window and the susceptor, and controlling a temperature of the susceptor to a predetermined temperature, controlling a pressure in the process chamber to a predetermined pressure, introducing the process gas into the process chamber, and introducing, via the dielectric window, microwaves for a plasma treatment to the object into the process chamber so that plasma of the process gas has plasma density of 10¹¹ cm⁻³ or greater, wherein a distance between the dielectric window and the object is maintained between 20 mm and 200 mm.

An electrically conductive, plasma-resistant member adapted for exposure to a halogen-based gas plasma atmosphere includes a substrate having formed on at least part of a region thereof to be exposed to the plasma a thermal spray coating composed of yttrium metal or yttrium metal in admixture with yttrium oxide and/or yttrium fluoride so as to confer electrical conductivity. Because the member is conductive and has an improved erosion resistance to halogen-based corrosive gases or plasmas thereof, particle contamination due to plasma etching when used in semiconductor manufacturing equipment or flat panel display manufacturing equipment can be suppressed.

A wicking material is disclosed that exhibits a horizontal wicking velocity of at least about 1.0 millimeter per second when contacted with a physiological fluid such as blood, lymph or cellular interstitial fluid. This high wicking rate is achieved by means of treatment of a fibrous wicking material candidate with a low temperature gas plasma, particularly a glow discharge gas plasma formed in a gaseous blend made up predominantly of a mixture of oxygen with a saturated alkane chosen from the group consisting of methane, ethane and propane. Diagnostic test strips made with the surface-modified wicking material, and containing an immobilized reagent means for analysis of an analyte in a physiological fluid, show improved performance in terms of increased accuracy, finer precision of analyses, reduced time of analysis, a smaller fluid sample size requirement, and improved compliance with manufacturing standards resulting in lower manufacturing costs blood sugar determinations.

A method of protecting a low k dielectric layer that is preferably comprised of a material containing Si, O, C, and H is described. The dielectric layer is subjected to a gas plasma that is generated from a C_XH_Y gas which is preferably ethylene. Optionally, hydrogen may be added to the C_XH_Y gas. Another alternative is a two step plasma process involving a first plasma treatment of C_XH_Y or C_XH_Y combined with H₂ and a second plasma treatment with H₂. The modified dielectric layer provides improved adhesion to anti-reflective layers and to a barrier metal layer in a damascene process. The modified dielectric layer also has a low CMP rate that prevents scratch defects and an oxide recess from occurring next to the metal layer on the surface of the damascene stack. The plasma treatments are preferably done in the same chamber in which the dielectric layer is deposited.

A microfluidic disc having one or more enclosed microchannel structures, and the microchannel structures are intended to be used for transport of transporting liquids. The device is characterized in that at least a part of the inner walls of each of one or more microchannel structures are treated with a gas plasma having one or more organic precursor compounds.

A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode.

An electrosurgical instrument for delivering radiofrequency (RF) electromagnetic (EM) energy and microwave frequency EM energy from a coaxial feed cable through an instrument tip into tissue. The instrument tip comprises a dielectric body separating first and second conductive elements, which act as active and return electrodes to convey the RF EM radiation by conduction, and as an antenna to radiate the microwave EM radiation. The instrument also has a fluid feed incorporated into its tip, e.g. in an additional dielectric element mounted on the underside of the tip, for delivering fluid. The delivered fluid may be a gas plasma to assist treatment or a liquid to plump up a tissue region before treatment. The instrument may fit in an endoscope.

A plasma surgical device for reducing bleeding in live tissue by means of a gas plasma. The device comprises a plasma-generating system having an anode (1), a cathode (8) and a gas supply channel (17) for supplying gas to the plasma-generating system, the plasma-generating system comprising at least one electrode (3, 5), which is arranged between said cathode (8) and said anode (1), and the plasma-generating system being enclosed by a housing (12) of an electrically conductive material, which is connected to the anode (1). The device is characterised in that said housing (12) forms said gas supply channel (17).

The invention includes a plasma etch-resistant film for a substrate comprising a yttria material wherein at least a portion of the yttria material is in a crystal phase having a crystal lattice structure, wherein at least 50% of the yttria material is in a form of a monoclinic crystal system. The film may be treated by exposure to a fluorine gas plasma. Also included are plasma etch-resistant articles that include a substrate and a film, wherein the film comprises an yttria material and at least a portion of the yttria material is present in the film in a crystal phase having a crystal lattice structure and at least 50% of the yttria material is in a form of a monoclinic crystal system. Several methods are contemplated within the scope of the invention.

The invention relates to a superenergy spark plug applied to a combustion engine firing system. It is mainly made up of shell, side electrode, and insulator. The lower part of the side electrode is a discharging end. A high voltage electrode and a superenergy electrode are arranged in the shell, the two electrodes and the shell are separated with insulators. The distribution method of the superenergy electrode and the high voltage electrode may adopt several methods. The discharging step is divided into discharging of high voltage electrode and the discharging of superenergy electrode. The superenergy discharging spark is generated between the superenergy electrode and the side electrode through the gas plasma generated by the high voltage discharging, the single time discharging energy can reach above 20 joules. The invention can enlarge the combustion limit of mixed gas in the engine cylinder, thus achieves the aim reducing the discharging of engine and upgrading the economy of the engine.

A low dielectric constant hydrogenated silicon-oxycarbide (SiCO:H) film is prepared by bringing an organosilicon or organosilicate compound having at least one vinyl or ethynyl group, or a mixture of a saturated organosilicon or organosilicate compound and an unsaturated hydrocarbon into contact with a substrate in the presence of an O₂-containing gas plasma.

A reactor for processing a semiconductor substrate includes a reactor housing which defines a processing chamber, and at least one gas injecting assembly. The processing chamber is adapted to support a semiconductor substrate therein. The gas injection assembly injects at least one gas into the processing chamber and onto the substrate and is adapted to ionize the gas injection into the processing chamber to increase the reactivity of the gas with the substrate to thereby enhance the processing of the semiconductor substrate. In preferred form, the gas is ionized into a gas plasma. For example, the gas injection assembly may include a gas plasma generator which ionizes the gas with an electromagnetic field. Preferably, the gas plasma generator ionizes the gas exteriorly of the processing chamber to isolate the substrate from the plasma generator. The gas injection assembly further includes one or more injection tubes, preferably quartz tubes, with each tube including a plurality of orifices through which the ionized gas is delivered into the processing chamber.

A balloon catheter and a method of making the balloon catheter, having a balloon which is bonded to an elongated shaft, and which has a first layer and a second layer and an improved strong bond between the balloon and the shaft. One aspect of the invention is directed to a balloon in which the balloon first layer has at least a section with a gas plasma-etched or chemical solution-etched surface for improved bondability. Another aspect of the invention is directed to a balloon in which the balloon first layer has a proximal end section bonded to an outer surface of the shaft and the balloon second layer has a proximal end section bonded to an inner surface of the shaft, and, in one embodiment, at least a section of the balloon first layer has a gas plasma-etched or chemical solution-etched surface.

A microwave reactor for decomposing waste green house gases resulting from the manufacture of semiconductors and from other industrial processes. The microwave reactor includes a plasma chamber having a gas inflow port spaced apart from a gas outflow port for transporting gases through the plasma chamber. A gas plasma is generated in the plasma chamber to facilitate the gas decomposition. The structure of the microwave reactor includes an insulating cover protruding into the plasma chamber and forming an internal cavity that is isolated from gases in the plasma chamber. A microwave antenna extends into the internal cavity of the plasma chamber to couple the microwave energy into plasma chamber for causing a plasma to form in the gases.

Methods and apparatus for liquid, gas, and gas plasma sterilization of items. An item is located within a sterilizing apparatus and sterilized through the introduction of fresh sterilant at least once after an initial amount of sterilant is introduced into the apparatus. Alternatively, an item is contained within sterile packaging, positioned within a baffle, and sterilized through the flowing, including bi-directional flowing, of fresh sterilant. The apparatus includes one or multiple chambers within with cleaning and sterilizing take place.