132 results about "Gas plasma" patented technology

The invention discloses a gate dielectric film growth process, an HEMT (High Electron Mobility Transistor) device and a preparation method, and the gate dielectric film growth process comprises the steps: executing a primary process cycle of atomic layer deposition, and forming an amorphous gate dielectric film on the surface of a substrate; after the primary process circulation is completed, in-situ gas plasma treatment is executed, a single crystal gate dielectric film converted from the amorphous gate dielectric film after treatment is obtained, and when the single crystal gate dielectric film is formed between a metal gate and a barrier layer of the HEMT device, the interface state of the metal gate at a gate groove can be improved, the quality of a contact interface below gate metal is improved, and the performance of the HEMT device is improved. And the defect density and the electron trapping effect are reduced, so that the problems of serious influence on safe operation of the device and even grid degradation caused by grid leakage and threshold voltage drift after stress of the device can be effectively avoided, and the performance of the device is improved.

The invention relates to the technical field of instruments and meters, in particular to an inductively coupled plasma mass spectrometer system for intelligent data processing and report generation. Comprising a sample introduction unit, a plasma excitation and ionization unit, a mass analyzer and detection unit, a vacuum system unit and an intelligent data processing and report generation unit. Efficient ionization is achieved through a bipolar radio frequency switching and AI optimized reaction gas plasma source, the AI optimization module monitors in real time and dynamically adjusts parameters so that the ionization efficiency can be stabilized at 92% + / -2%, and meanwhile a reaction gas control system can optimize plasma conditions to suppress interference ions. And the mass analyzer and the detection unit realize high-precision ion separation by utilizing AI interference correction and a QMS-TOF double analyzer mode, and an interference elimination module can automatically eliminate polyatomic ion interference, so that the ionization efficiency, the analysis precision and the accuracy are improved, the interference is effectively inhibited, and the analysis capability of the system on a complex sample is enhanced.

A method for joining, by brazing, a first part and a second part, the steps of preparing at least one of the parts including the following: a) providing a part intended to be brazed, the part being made of carbon or based on titanium, nickel or a CoCr alloy, b) performing inert gas plasma treatment on the part whereby the part is cleaned and an active surface is formed on the part, c) depositing a first layer comprising an active element on the active surface of the part, the active element being a carbide-forming element, d) depositing a second layer of gold on the first layer, whereby the first layer is protected from oxidation and good wetting is ensured.

The invention belongs to the technical field of laser-hollow cathode arc composite welding. The embodiment of the invention provides a laser-hollow cathode arc composite coaxial welding torch and a welding method. In order to solve the problem that the fusion depth cannot be continuously increased when the laser power is relatively high, the space between the hollow cathode and the welding workpiece is cooled through compressed gas, and in order to enhance the cooling effect, a dry ice coolant is further arranged at a cooling gas outlet through a second channel, so that the cooling effect is improved. A dry ice cooling agent is sprayed to the space between the hollow cathode and the welding workpiece by means of the pressure of compressed gas, and the space between the hollow cathode and the welding workpiece is further cooled or metal steam, air, inert gas, plasma and / or welding plumes are discharged in a manner of blowing or sucking air from the center of the hollow cathode; therefore, the influence of gas above the electric arc and high-temperature ionization of the gas on laser transmission is avoided, and a larger fusion depth is obtained.

The invention belongs to the technical field of remote plasma sources, and provides a remote plasma source dissociation rate detection method which comprises the following steps: acquiring infrared spectrum data of a remote plasma source; inputting the infrared spectrum data collected for multiple times into a pre-trained plasma source ionization identification model, respectively obtaining characteristic spectrum peak values, and calculating an average value of the characteristic spectrum peak values; in the acquisition process, compensating environmental interference through a parameter regulation and control mechanism, so that a characteristic spectrum peak value and the residual gas concentration form a positive correlation relationship; and calculating the dissociation rate based on the average value of the characteristic spectrum peaks. According to the method, the dissociation rate of the remote plasma source is monitored in real time, and the environmental interference is regulated and controlled by a parameter regulation and control mechanism, so that the characteristic spectrum peak value and the residual gas concentration form a positive correlation relationship, the dissociation rate can be solved by replacing the residual gas concentration with the characteristic spectrum peak value, the precision is ensured, and the working efficiency is improved. The method is suitable for real-time closed-loop control of multi-element gas plasma dissociation rate detection in a semiconductor technology.

The invention relates to the technical field of chemical vapor deposition, and discloses large-area substrate PECVD process deposition equipment and a deposition method thereof.The deposition equipment comprises a plurality of cavities connected in sequence and a carrier plate used for containing a substrate; the carrier plate is controlled by the movement control device to move in each cavity; wherein the feeding cavity is used for transition between an atmospheric environment and a vacuum environment; the process cavity deposits a target film layer on the substrate through a PECVD process; in the process cavity, a vacuum device is used for controlling the pressure in the cavity body of the process cavity and ensuring the free path of movement of gas and plasma; reaction gas is introduced into the plasma source and is used for decomposing the reaction gas into plasma; the precursor pipeline is used for providing precursor gas; the plasma reacts with the precursor gas, and a target film layer is deposited on the surface of the substrate; the moving control device indirectly controls the deposition thickness of the target film layer by controlling the moving speed of the carrier plate.

The invention relates to the technical field of electric flame stoves, in particular to an electric flame stove with low nitrogen oxide emission and an operation method of the electric flame stove. According to the technical scheme, the device comprises a gas supply unit, a discharge cooking range and a plasma power supply and is used for preparing and supplying high-purity nitrogen; the discharge cooking range is communicated with the gas supply unit and is used for receiving the high-purity nitrogen as working gas; and the plasma power supply is electrically connected with the discharge cooking range and is used for providing discharge electric energy for the discharge cooking range. According to the invention, high-purity nitrogen is used as a discharge medium instead of air, so that the generation of nitrogen oxides and ozone is inhibited from the source, and the pollutant discharge is obviously reduced; meanwhile, the system is highly compatible with an existing cooking range structure, and can adapt to various discharge forms without modification; the air compressor, the nitrogen making machine, the power supply and other components are integrated in the stove body, so that the miniaturization and integration of the equipment are realized; and in cooperation with gas storage pressure stabilization and flow regulation control, the stability of system operation and the simplicity and convenience of operation are ensured.

To provide a hand-held or portable SPR device.SOLUTION: A hand-held or portable SPR device focuses light at two or more positions on a noble metal sensor surface, functionalized to enable detection of different SPR curves and their respective minima. The detection is accomplished substantially simultaneously by obtaining SPR signals contemporaneously from the different locations on the sensor surface, on the same sensor. The SPR device may incorporate multiple light sources or a single light source with a beam that is shifted by deflectors in seriatim to focus on different positions on along the functionalized sensor surface. To control wettability of the sensor surface (to augment multiplexing), the sensor surface may include i) the addition of surface assembled monolayers (SAMs) and ii) surface bombardment by gaseous plasmas, most notably O2.SELECTED DRAWING: Figure 1A

The invention relates to the technical field of sealing materials, and particularly discloses a modified RPTFE gasket containing SILCAR62XT resin and a preparation method of the modified RPTFE gasket. The composition of the gasket mainly comprises RPTFE (Resin Polytetrafluoroethylene) resin, SILCAR62XT Dupont resin, a 5B component, fluorinated graphene and an interface bridging agent. The preparation method mainly comprises the following steps: performing fluorine-containing gas plasma activation on the compound filler to improve the interfacial compatibility; uniform dispersion of all the components is realized through ultrasonic-assisted mixing and melting granulation; multi-section gradient pressurization hot press molding is combined with a programmed slow cooling and annealing process, so that the compactness of the material is optimized, and internal stress is eliminated. The gasket is suitable for complex sealing working conditions of high temperature, high pressure, strong corrosion and wide temperature range vibration, and the creep resistance, the chemical stability and the fatigue resistance are remarkably improved; the preparation method is stable in process, is beneficial to obtaining products with high dimensional precision and uniform structure, and is suitable for large-scale production.

The present invention relates to a substrate processing apparatus, and the substrate processing apparatus according to one embodiment of the present invention comprises: a chamber having a processing space therein; a substrate support unit disposed in the processing space and configured to support a substrate; a gas supply unit for supplying a gas to the processing space; a spray head assembly for spraying the supplied gas to the processing space; and a plasma generating unit for plasma-converting the gas supplied to the processing space, the showerhead assembly including a fluid containing a magnetic component.

The application belongs to the technical field of carbonyl sulfur hydrolysis catalysts, and discloses a high-efficiency sulfur-resistant catalyst for carbonyl sulfur hydrolysis, a preparation method and application thereof.The preparation method comprises the following steps: (1) preparing a porous ceramic carrier containing alumina, titanium dioxide and zirconium dioxide; (2) in-situ growing a metal organic framework material containing lanthanum, bismuth and cerium on the surface of the porous ceramic carrier by using a solvothermal method; (3) performing a calcination treatment on the porous ceramic carrier loaded with the metal organic framework material in an oxygen-containing atmosphere to obtain a catalyst precursor; and (4) performing a reducing gas plasma bombardment treatment on the catalyst precursor to obtain the high-efficiency sulfur-resistant catalyst.The high-efficiency sulfur-resistant catalyst has high-efficiency low-temperature activity, excellent sulfur resistance and long service life.

To improve the barrier properties at the interface between the substrate and the graphene film. [Solution] The film formation method includes a loading step, a first step, and a second step. The loading step involves loading the substrate into the processing container. The first step involves forming an amorphous or microcrystalline interface layer on the substrate using a plasma of a first mixed gas containing a carbon-containing gas. The second step involves forming a graphene film on the interface layer using a plasma of a second mixed gas containing a carbon-containing gas.

A method for depositing crystalline semiconductors onto a substrate is provided. In this method, an electrical voltage is applied between a metallic sputtering target and the anode of a magnetron sputtering unit to ignite a magnetron discharge. This discharge causes a particle flux from the sputtering target to the substrate and excites the reactive gas to an initial quantity of activated reactive gas plasma, resulting in the epitaxial growth of a crystalline semiconductor on the substrate.In this process, during the deposition of a semiconductor on the substrate, an additional power input is implemented into the reactive gas plasma, which excites the reactive gas to a second quantity of activated reactive gas plasma that is higher than the first quantity of activated reactive gas plasma, but which keeps the particle flux from the sputter target to the substrate the same or increases only disproportionately less than the increase in the first quantity of activated reactive gas plasma compared to the second quantity of activated reactive gas plasma.

To provide a semiconductor manufacturing apparatus capable of removing an oxide film by dry cleaning.SOLUTION: According to an embodiment, a semiconductor-manufacturing apparatus includes a chamber 2 used for forming an oxide film, a susceptor 3 that is provided in the chamber and on which a substrate is placed, at least one supply pipe P1 for supplying a gas to the chamber, an exhaust pipe PP3 for exhausting a gas from the chamber, and a control unit 12 that controls supplying of a first source gas, an oxidizing gas, a reducing gas activated by plasma, and a first halide gas activated by plasma to the chamber and exhausting from the chamber.SELECTED DRAWING: Figure 1

An optical pulse measuring method measuring an optical pulse generated from a pulse light source is provided. The method includes: splitting the optical pulse and then focusing them at a measuring point, so as to generate gas plasma by the autocorrelation of the split optical pulses; receiving the sound signal from the gas plasma and generate a plasma sound signal; and using the plasma sound signal to calculate the characteristics of the optical pulse. A measuring device is also provided.

The invention relates to a cathode part for a device for thermal spraying, in particular for atmospheric plasma spraying and / or protective gas plasma spraying and / or vacuum plasma spraying, with a base body having a longitudinal axis, with a powder channel extending along the longitudinal axis for guiding powder particles from an input side of the cathode part to an output side of the cathode part through the cathode part.

According to the present invention, a yttrium-fluoride-based sprayed coating that has a Vickers hardness of 350 or higher, includes a YF3 crystal phase having an orthorhombic crystal system, and does not include a YF3 crystal phase having a crystal system other than an orthorhombic crystal system is produced by plasma-spraying a spray powder that includes a YF3 crystal phase having an orthorhombic crystal system and does not include a YF3 crystal phase having a crystal system other than an orthorhombic crystal system. In the present invention, it is possible to provide a yttrium-fluoride-based sprayed coating that has a high coating hardness and is such that the amount of particles generated upon exposure to a halogen-based gas plasma is low, and such a sprayed coating is exceptional as a sprayed coating formed on a member for a semiconductor-producing device that is used in a semiconductor production step.

The gas analyzer (1) comprises a sample chamber (40) into which a sample gas (9) to be measured flows, a plasma generation circuit (10) that generates plasma (8) in the sample chamber (40), and an analyzer 30 that analyzes the sample gas via the plasma (8) generated in the sample chamber. The plasma generation circuit (10) includes a plasma induction circuit (13) and an RF power supply circuit (11) configured to supply RF power to the plasma induction circuit. The plasma induction circuit is directly incorporated as at least part of the resonant components of the RF power supply circuit.

Disclosed are a plasma reactor, a gas conversion apparatus, and a gas conversion method. The gas conversion apparatus includes a plasma reactor for converting a processing target gas into a converted gas. The plasma reactor includes a ground electrode forming an inner wall of a reaction space and a high-voltage electrode facing the ground electrode inside the reaction space and generating an arc discharge. The high-voltage electrode has a taper shape including an enlarged portion, a reduced portion, and a boundary portion between the enlarged portion and the reduced portion. The reaction space includes a gas supply region between the enlarged portion and the inner wall, a discharge region where the discharge occurs between the reduced portion and the inner wall, and a connection region between the boundary portion and the inner wall and connecting the gas supply region to the discharge region. The processing target gas, a plasma driving gas, and an auxiliary gas are supplied to the gas supply region through at least one gas inlet.

The invention discloses a plasma activation bonding method and system for chip three-dimensional packaging. The plasma activation bonding method comprises the steps of chip pretreatment, plasma multi-stage activation, precise bonding and bonding post-treatment. Impurities on the bonding surface of the chip are removed through multi-step cleaning, then inert gas plasma etching activation and reactive gas plasma modification activation are carried out in sequence, then precise bonding is carried out in a controllable environment, residual stress is eliminated through annealing, and airtightness is detected. The system comprises a pretreatment module, a plasma activation module, a bonding module and a post-treatment module, and the integrated execution of the process is realized. According to the method, the problems of weak interface bonding force, large residual stress, poor airtightness and the like of a traditional process are solved, the bonding reliability and the product consistency are improved, the strict requirements of high-end chip packaging are met, and the method has high industrialization value.

This invention belongs to the field of alloy coating preparation technology, specifically relating to a method for preparing a medium-entropy or high-entropy alloy cladding layer. The invention involves mixing at least three elemental metal powders to obtain a mixed metal powder; depositing the mixed metal powder on a substrate surface to obtain a mixed metal powder layer; and performing radio frequency plasma cladding on the mixed metal powder layer using mixed plasma to obtain a medium-entropy or high-entropy radio frequency plasma cladding layer. The mixed plasma includes inert gas plasma and water vapor plasma. This invention utilizes water vapor plasma to assist inert gas plasma, and simultaneously leverages the high-temperature effect of radio frequency plasma to achieve rapid in-situ preparation of a medium-entropy or high-entropy radio frequency plasma cladding layer. Furthermore, the medium-entropy or high-entropy alloy cladding layer obtained with the assistance of water vapor plasma exhibits characteristics of low porosity, uniform microstructure, and high density.

An amorphous carbon hard mask is formed having low hydrogen content and low sp3 carbon bonding but high modulus and hardness. The amorphous carbon hard mask is formed by depositing an amorphous carbon layer at a low temperature in a plasma deposition chamber and treating the amorphous carbon layer to a dual plasma-thermal treatment. The dual plasma-thermal treatment includes exposing the amorphous carbon layer to inert gas plasma for implanting an inert gas species in the amorphous carbon layer and exposing the amorphous carbon layer to a high temperature. The amorphous carbon hard mask has high etch selectivity relative to underlying materials.

The invention belongs to the technical field of high-purity metal purification, and provides a method for deeply purifying high-purity indium and gallium by using microwave plasma and ultra-high-purity indium and gallium. The method comprises the following steps: placing high-purity indium or high-purity gallium in a vacuum reaction chamber, vacuumizing and carrying out preheating treatment; reaction gas is introduced into the vacuum reaction chamber, and multi-stage plasma coupling is excited through a multi-element power source; and gas products are collected through a condensation system. According to the method, the low-temperature characteristic and diversity of microwave plasma are utilized, the occurrence form of impurities such as boron and phosphorus in high-purity indium and gallium is changed through regulation and control of gas / plasma under the medium-low temperature condition, deep separation of boron and phosphorus in high-purity indium and gallium is carried out, the removal efficiency of boron and phosphorus is improved, and the content of boron and phosphorus is reduced to ppb level; the purity of the ultra-pure indium and gallium can reach 5N5 grade or above, the direct recovery rate is increased to 99% or above from 92% of a traditional method, and the method is suitable for industrial production of electronic-grade and semiconductor-grade high-purity metal.

The invention provides a metal plate design and cleaning method for cleaning an etching chamber, and relates to the technical field of plasma cleaning, and the method comprises the following steps: designing a low-sputtering-yield metal film on four sides of an aluminum plate, controlling the width and thickness of the metal film to enable the metal film to be suitable for sputtering regulation and shielding, and pressing the metal film through an insulating pressing plate to enable the metal film to be partially exposed; after inert gas plasma bombardment, potential particles are deposited and covered, and an edge film layer diffracts to be thinned and is not prone to falling off. According to the invention, the films with low sputtering yield, including Ti, W and Ta, are designed on the four sides of the metal aluminum plate for cleaning the etching chamber, and the sputtering yield of the films with low sputtering yield is only 30%-40% of that of an Al film, so that when the etching chamber executes the cleaning operation of the metal aluminum plate, the films with low sputtering yield are diffracted on the edges of the insulating pressing edges, and the diffracted metal film layers are thinned, so that the etching efficiency is improved. And the problem of film layer falling is not easy to occur. The service life of the insulation pressing edge is prolonged, and the edge sparking risk is reduced at the same time.

The invention discloses a closed growth method of a high-purity laser-damage-resistant fluoride crystal, and relates to the technical field of crystal growth. The preparation method comprises the following steps: treating fluoride powder with an HF solution, and performing F2 high-temperature roasting purification; growing crystals in a Bridgman furnace under the assistance of a uniform magnetic field with proper intensity; and finally, processing the crystal by using CF4 and O2 mixed gas plasma to eliminate crystal surface damage and form a fluorine-rich passivation layer. Heat convection in the melt can be inhibited through assistance of the magnetic field, the crystallization process is kept stable, the impurity content and dislocation density of the crystal can be effectively reduced, the laser damage resistance of the crystal is improved, and the method is suitable for the high-end optical field.

Provided is a surface modification method for using plasma of a treatment gas to modify a bonding surface of a substrate to be bonded to another substrate, the surface modification method comprising a first adjustment step, an evacuation step, a second adjustment step, and a modification step. In the first adjustment step, the moisture content in a treatment container that can accommodate the substrate is adjusted by supplying a humidified gas at a first flow rate into the treatment container. In the evacuation step, the inside of the treatment container is evacuated after the first adjustment step. In the second adjustment step, the moisture content in the treatment container is adjusted by supplying the humidified gas into the treatment container at a second flow rate greater than the first flow rate. In the modification step, after the second adjustment step, the bonding surface of the substrate is modified by generating a plasma of the treatment gas in the treatment container.

Embodiments of the present disclosure generally relate to methods of plasma curing a dielectric material layer formed on a substrate. More specifically, the methods disclosed herein utilize a xenon (Xe) containing gas to generate a plasma that allows for greater dielectric compositional modulation. In some embodiments, a method of curing a substrate includes depositing a dielectric film onto a substrate to form a dielectric layer on a surface of a substrate, and performing a plasma cure operation on the formed dielectric layer. The plasma cure operation includes generating a plasma over a surface of the formed dielectric layer by delivering a RF power to a plasma process gas. The plasma process gas include Xe and H2.

A substrate processing method for forming a carbon-containing film that is inhibited from film peeling due to thermal treatment is provided. The substrate processing method includes: preparing a substrate having a foundation film; forming a carbon-containing film having a film density of 2 g / cm3 or greater on the foundation film by forming a plasma of a processing gas containing a carbon-containing gas; and subjecting the substrate on which the carbon-containing film is formed to thermal treatment. In the forming of the carbon-containing film, for a first time from a start of the forming of the carbon-containing film, an ion energy higher than the ion energy during a second time from an end of first time is supplied to the substrate.

The invention relates to an air-breathing electric propulsion system ground test system and method, and belongs to the field of ultra-low orbit space electric propulsion, and the system comprises a spiral wave plasma source, an incoming flow parameter measurement device, a tested air-breathing electric propulsion system, a micro-thrust frame, a vacuum system, a gas cylinder and a micro-thrust frame measurement system. A gas cylinder is used as a gas source to generate simulated incoming flow through a spiral wave plasma source, the simulated incoming flow enters a tested air-breathing electric propulsion system, the thrust of the tested air-breathing electric propulsion system is calculated by measuring net thrust, and then specific impulse is calculated. The spiral wave plasma source is used for generating rarefied gas plasma incoming flow equivalent to neutral gas incoming flow, incoming flow with different track heights and different component contents can be simulated by adjusting flow, power, magnetic field intensity and the like, and performance verification of the air suction type electric propulsion system is achieved by measuring net thrust.

According to one embodiment, a semiconductor manufacturing apparatus includes a chamber that is used for deposition of an oxide film, a susceptor that is provided in the chamber and on which a substrate is placed, at least a supply pipe that supplies a gas to the chamber, an exhaust pipe that exhausts the gas from the chamber, and a controller that is configured to control supply of each of a first source gas, an oxidizing gas, a reducing gas activated by plasma, and a first halide gas activated by plasma to the chamber, and gas exhaust from the chamber.