Plasma processing apparatus

Abstract

A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode.

Description

technical field [0001] The present invention relates to a plasma processing apparatus for performing film formation processing, etching processing, etc., on a target object such as a semiconductor wafer using plasma, and particularly relates to a technology utilized in the field of semiconductor processing. Here, the so-called semiconductor processing refers to forming a semiconductor layer in a predetermined pattern on a substrate to be processed such as a semiconductor wafer and a glass substrate for an FPD (Flat Panel Display) such as an LCD (Liquid Crystal Display). Insulating layers, conductive layers, etc., various processes are performed to manufacture structures including semiconductor devices, wiring lines connected to semiconductor devices, electrodes, etc. on the object to be processed. Background technique [0002] In the manufacture of semiconductor devices constituting semiconductor integrated circuits, various processes such as film formation, etching, oxidati...

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Problems solved by technology

However, according to the findings of the present inventors, in such a plasma device, problems arise in terms of particle generation and electron density

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