34 results about "Dichlorosilane" patented technology

This invention provides a weather-resistant metal protective coating and its preparation method. The weather-resistant metal protective coating comprises a modified epoxy resin, modified carbon nanotubes, a curing agent, an initiator, and a diluent. The modified epoxy resin is prepared by reacting epoxy resin sequentially with methyldodecyl dichlorosilane and hydroxyethyl methacrylate ethyl phosphate. The modified carbon nanotubes are prepared by reacting carboxylated carbon nanotubes with 3-(methacryloyloxy)propyltrimethoxysilane. The weather-resistant metal protective coating prepared by this invention exhibits excellent anti-corrosion, anti-aging, and mechanical properties.

The invention discloses a trichlorosilane deep rectification composite impurity removal process, and belongs to the technical field of polycrystalline silicon production raw material purification. According to the process, deep purification of crude trichlorosilane is achieved through the steps of pre-protection and primary adsorption, directional rectification enrichment of methyl dichlorosilane narrow fractions, concentration, mixing with silicon tetrachloride, catalytic reaction rectification conversion, differential pressure thermal coupling rectification purification, double-tank parallel deep purification, tail gas treatment and the like. According to the method, the impurity methyl dichlorosilane difficult to remove is precisely separated through side extraction, the impurity methyl dichlorosilane is converted into a component easy to separate through a catalytic reaction, and the boron and phosphorus impurities are deeply removed in combination with differential pressure thermal coupling energy saving and double-tank alternate adsorption. The process can efficiently remove moisture, metals and key impurities boron and phosphorus, obviously improves the purity of the trichlorosilane product, realizes gradient utilization of energy and hydrogen circulation, and has the advantages of high purity, low energy consumption and continuous production.

The present disclosure relates to methods of forming silicon-on-insulator substrates. A method of forming an SOI substrate includes performing a hydrogen thermal treatment on a pretreated sacrificial wafer at an elevated temperature. A stop layer and a semiconductor layer can be sequentially formed on a first surface of the sacrificial wafer on which the hydrogen (H2) thermal treatment was performed. The stop layer and the semiconductor layer can be formed by an epitaxial growth process using a hybrid precursor including monosilane (MS) and dichlorosilane (DCS) sources.

A method of forming an SOI substrate including a hydrogen thermal treatment performed on a pretreated sacrificial wafer, under high temperature. A stopper layer and a semiconductor layer may be sequentially formed on a first surface of the sacrificial wafer on which the hydrogen (H2) thermal treatment was performed. The stopper layer and the semiconductor layer may be formed by an epitaxial growth process using a mixed precursor including a monosilane (MS) source and a dichlorosilane (DCS) source.

The application discloses a hydroxyl-terminated silicon oil containing fluorine and boron and a preparation method thereof, relates to the technical field of high polymer material preparation, and is prepared from dichlorosilane compounds, (3,3,3-trifluoropropyl) dichloromethylsilane and boron-containing acid through a hydrolysis-condensation method. The hydroxyl-terminated silicon oil containing fluorine and boron has a 5% weight loss temperature of 420-440 DEG C under N2 atmosphere and a glass transition temperature of -130 DEG C to -140 DEG C, and has a wide use temperature and can be applied in many extreme occasions.

An on-line moisture detection device for dimethyl dichlorosilane hydrolysis hydrogen chloride comprises a gas conveying pipeline, a cooler, a dryer and a compressor are sequentially arranged on the gas conveying pipeline in the conveying direction, a gas inlet branch pipe is arranged on the gas conveying pipeline between the cooler and the dryer and connected to a moisture detection mechanism, and the moisture detection mechanism is connected with the compressor. And the gas conveying pipeline between the dryer and the compressor is provided with another gas inlet branch pipe, and the gas inlet branch pipe is connected to another moisture detection mechanism. By adopting the structure, the moisture content of the product hydrogen chloride can be monitored and processed in real time, the moisture content in the product hydrogen chloride is effectively controlled, and the compressor is prevented from being damaged.

The invention belongs to the technical field of ceramic precursors, and particularly relates to a silicon-boron-carbon-nitrogen ceramic precursor with a main chain containing alkynyl and a preparation method of the silicon-boron-carbon-nitrogen ceramic precursor. Comprising the following steps: (1) dropwise adding an n-butyllithium solution into an ether solvent, stirring, continuously dropwise adding trichloroethylene, and reacting to obtain an alkynyl dilithium salt turbid solution; (2) adding boron trichloride into the alkynyl dilithium salt turbid solution to carry out primary dechlorination polycondensation reaction, and dropwise adding dichlorosilane to carry out secondary dechlorination polycondensation reaction after the reaction is completed; (3) adding hexamethyldisilazane into the system in the step (2) to carry out an end-capping reaction, collecting supernate after the reaction is finished, and distilling at normal pressure to remove the solvent, so as to obtain a silicon-boron-carbon-nitrogen ceramic precursor crude product; and (4) dissolving the silicon-boron-carbon-nitrogen ceramic precursor crude product in an organic solvent, carrying out dialysis treatment, and carrying out atmospheric distillation on the solution in a dialysis membrane to remove the solvent so as to obtain the silicon-boron-carbon-nitrogen ceramic precursor with the main chain containing alkynyl, and the ceramic yield of the silicon-boron-carbon-nitrogen ceramic precursor in the high-temperature ceramization process can reach more than 70%.

This invention relates to the field of metallocene linear low-density polyethylene (MDPE) preparation technology, and particularly to a method for preparing long-chain branched metallocene polyethylene. The method comprises the following steps: A polymerization reaction is carried out in a high-pressure stainless steel reactor. A metallocene catalyst is added to the reactor with dried alkane, followed by ethylene, comonomers, and hydrogen gas, which is then introduced into the reactor. A mixed solution of dichlorosilane-functionalized non-conjugated α,ω-dienes and white oil is then added to the reactor. After stabilizing the reaction for 12-72 hours, excess steam is introduced for hydrolysis. The mixture is stirred for 1-4 hours and then discharged to obtain long-chain branched metallocene polyethylene. This invention achieves controlled molecular structure with controlled long-chain branching content, resulting in a product with high branching degree, suitable branch length, and uniform distribution. This increases the number of branched active sites and their uniform distribution, leading to excellent mechanical properties and low haze.

This invention provides a method for forming an SOI (Silicon on Insulator) substrate. [Solution] A method for forming an SOI substrate 100 according to an embodiment of the present invention includes the steps of performing a high-temperature H2 heat treatment on a pre-treated sacrificial wafer 110, and sequentially forming a stopper layer 111 and a semiconductor layer 112 on a first surface of the heat-treated sacrificial wafer 110. The stopper layer 111 and the semiconductor layer 112 are formed by epitaxial growth using a mixed precursor consisting of monosilane (MS) and dichlorosilane (DCS), respectively.

The invention discloses polymethylsilane capable of regulating and controlling the C / Si atomic ratio and a preparation method and application thereof.The preparation method comprises the steps that metal sodium is cut and crushed, and metal sodium fragments are obtained; adding the metal sodium fragments into an organic solvent, and heating until the metal sodium is in a molten state to obtain a mixture; stirring and cooling the mixture to obtain a sodium sand mixture; mixing methyl dichlorosilane, allyl methyl dichlorosilane, tetrahydrofuran and 15-crown ether-5, and then dropwise adding the mixture into the sodium sand mixture to react; the sodium sand in the preparation method has the characteristics of uniform particle size, high activity and clean surface; tetrahydrofuran and 15-crown ether-5 are added into dichloromethylsilane and allyl methyldichlorosilane, so that the single electron transfer rate of metallic sodium to dichloromethylsilane can be increased, the reaction activation energy can be reduced, the reaction efficiency can be improved, the molecular structure can be optimized, the loss of carbon elements can be made up, and the problem that PMS is rich in silicon after pyrolysis can be solved.

This utility model discloses a system for removing impurities from carbon-containing chlorosilanes and recovering chlorosilanes, comprising: a first distillation column for receiving and concentrating carbon-containing chlorosilanes; a first adsorption and reaction device connected to the first distillation column, the first adsorption and reaction device being filled with a metal adsorbent material and equipped with a silicon tetrachloride feed pipeline; a second adsorption and reaction device connected to the first adsorption and reaction device, the second adsorption and reaction device being filled with a methyldichlorosilane adsorbent material; a second distillation column connected to the second adsorption and reaction device; and a third distillation column connected to the second distillation column. This utility model can adsorb and concentrate metal impurities in carbon-containing chlorosilanes as a catalyst for the carbon removal reaction, effectively avoiding deactivation and failure caused by metal impurities encapsulating the resin catalyst, improving the conversion rate of methyldichlorosilane, and effectively avoiding the disproportionation reaction of silicon trichloride in the presence of the resin catalyst, thereby improving the carbon removal efficiency and chlorosilane recovery efficiency.

The invention relates to a method for preparing double-terminal alkylene disiloxane through a chlorosilane condensation / nucleophilic substitution reaction method, and belongs to the technical field of functional organosilicon compound preparation. The method comprises the following steps: by taking alkyl dichlorosilane as a raw material, carrying out condensation reaction on the alkyl dichlorosilane and a metal oxide in an organic solvent to obtain alkyl dichlorosiloxane; and further performing nucleophilic substitution reaction on the alkyl dichlorosiloxane and a Grignard reagent containing alkylene to obtain the double-terminal alkylene disiloxane. The raw material alkyl dichlorosilane adopted by the invention is a main product of an organic chlorosilane industrial production device, the raw material is abundant, and the raw material source is wide. Compared with a technical route taking vinyl chlorosilane as a raw material in the prior art, the method is more suitable for industrial application.

The invention relates to a scratch-resistant automobile film and a preparation method thereof, and belongs to the technical field of composite film materials. The vehicle film is of a multi-layer composite structure and sequentially comprises a pressure-sensitive adhesive layer, a TPU base film, a functional coating and a release film from inside to outside. The innovation is that the functional coating is formed by curing slurry containing a specific self-repairing anti-scratch agent, and the anti-scratch agent is prepared by reacting hydroxyl-terminated silicone oil with dichloromethylvinylsilane to form an alkenylation intermediate, then introducing an aldehyde group through mercaptoacetaldehyde click addition, and finally carrying out Mannich reaction with aminophenyl POSS (Polyhedral Oligomeric Silsesquioxane). Therefore, a composite structure of'POSS rigid core-dynamic imine bond-flexible thioether chain 'is constructed on an organic silicon side chain. Due to the structure, the coating has excellent scratch resistance, high light transmittance and efficient thermal stimulation response self-repairing capability.

The invention belongs to the technical field of high-performance special materials, and discloses a one-step method for preparing silicon alkyne resin MDPES. The method comprises the following steps: mixing 2-halophenylacetylene, dichlorosilane and a solvent, adding magnesium, and heating for reaction; after the reaction is finished, adding acid liquor for neutralization, and then extracting and layering to obtain an organic layer; then concentrating the organic layer to obtain a concentrated solution, and finally carrying out molecular distillation on the concentrated solution to prepare the silicon alkyne resin MDPES. Wherein the 2-halogen phenylacetylene comprises one of 2-iodine phenylacetylene, 2-bromophenylacetylene and 2-chlorophenylacetylene; and the molecular formula of the dichlorosilane is R1R2SiCl2. According to the method provided by the invention, the 2-halophenylacetylene and the dichlorosilane are subjected to one-step reaction in the anhydrous solvent to prepare the product with high purity and high yield. The method uses few raw materials, the preparation steps are simple, and the production efficiency is high; and the prepared product has the advantages of high yield, high purity, safety, environmental protection and easiness in industrialization.

The invention belongs to the technical field of organic synthesis, and particularly relates to a preparation method of cyclohexylmethyldimethoxysilane. The preparation method of cyclohexylmethyldimethoxysilane provided by the invention comprises the following steps: mixing cyclohexene, dichloromethylsilane and a platinum catalyst in a mixed atmosphere of oxygen and nitrogen, and then carrying out hydrosilylation reaction to obtain cyclohexylmethyldichlorosilane, the content of oxygen in the mixed atmosphere of oxygen and nitrogen is 100-200 ppm; and mixing the cyclohexylmethyl dichlorosilane and methanol, then carrying out a substitution reaction, and carrying out purification treatment on the system after the substitution reaction to obtain the cyclohexylmethyl dimethoxysilane. The cyclohexylmethyldimethoxysilane prepared by the preparation method provided by the invention has relatively high purity and yield.

The present application relates to trichlorosilane purification technical field, especially to a kind of trichlorosilane purification method and system, including following operating steps: S01: crude trichlorosilane is introduced into light component removal tower and removes light component;S02: after being treated by S01, crude trichlorosilane is extracted from light component removal tower kettle, and enters the lower part of extraction rectification tower, and is extracted with the extractant introduced in the upper part of extraction rectification tower;Boiling point difference of different components is utilized, and pure trichlorosilane in column top is separated, and extractant containing methyl dichlorosilane in column kettle;S03: pure trichlorosilane extracted from the top of extraction rectification tower is sent into heavy rectification tower and is purified, and high-purity trichlorosilane is exported from the top after purification and is ready for use, and silicon tetrachloride in column kettle is introduced into step S02 as extractant;S04: the extractant containing methyl dichlorosilane extracted from the column kettle of extraction rectification tower is sent into desolventizing kettle and is recovered and purified, and methyl dichlorosilane is removed from the top after purification, and silicon tetrachloride extracted from the column kettle is introduced into the upper part of extraction rectification tower as extractant.Can effectively improve the purification effect of trichlorosilane.

The invention relates to a preparation method of a silyl compound, and belongs to the technical field of organic chemistry. The preparation method of the silyl compound comprises the following steps: under a protective atmosphere, mixing perfluoroalkyl sulfonic acid and phenylsilane in an organic solvent, and carrying out a reflux reaction to obtain a reaction solution; the preparation method comprises the following steps: stirring and mixing organic amine and lithium alkylide in an organic solvent to obtain turbid liquid; mixing and refluxing the obtained turbid liquid and the obtained reaction liquid, carrying out solid-liquid separation to take a liquid phase, and concentrating and rectifying to obtain the silane-based compound. According to the invention, phenylsilane and diphenyl silane are used for replacing traditional monochlorosilane and dichlorosilane, and the raw material is liquid, so that the whole process is safer and more efficient; and requirements on process equipment are low, the process is greatly simplified, and large-scale production is facilitated.

The invention discloses a high-temperature-resistant anti-aging electronic component coating and a preparation method thereof, and relates to the technical field of coatings. The high-temperature-resistant anti-aging electronic component coating prepared by the invention is prepared from the following raw materials in parts by weight: epoxy resin, modified soybean oil, a silane fluorenyl epoxy monomer, a curing agent, modified mica powder and acetone. The preparation method comprises the following steps: enabling soybean oil to react with 3-(dimethylamino)-1-propanethiol and epoxy chloropropane in sequence, and introducing quaternary ammonium salt and an epoxy group to the soybean oil; the preparation method comprises the following steps: reacting bisphenol fluorene with dichlorodiphenyl silane and epoxy chloropropane in sequence to obtain an epoxy monomer containing a siloxane structure and fluorenyl, and participating in curing of the coating; mica powder with excellent thermal stability is subjected to surface modification with kh550 and then reacts with protocatechuic acid, and the protocatechuic acid is loaded on the mica powder. Through the improvement, the coating is endowed with excellent high-temperature resistance and antibacterial ability.

The invention relates to the technical field of thermosetting materials, and discloses a bisphenol A type benzoxazine and bismaleimide transparent resin alloy preparation method which comprises the following steps: preparing required materials; and casting the blend solution on a glass plate pretreated with dimethyldichlorosilane, and drying at 50 DEG C for 4-6 hours. Then respectively carrying out heat treatment for 1-3 hours at different temperatures to obtain an alloy film; and the prepared alloy films with different mixing ratios and different heat treatment temperatures are subjected to performance testing. According to the process, bismaleimide and bisphenol A type benzoxazine B-a are used as main raw materials, and the transparent bismaleimide resin alloy material with excellent performance is prepared through a specific formula and process steps. The alloy material not only has high transparency and excellent heat resistance, but also has relatively high mechanical strength and chemical stability.

The present application relates to a kind of low-temperature flexible rubber sealing strip and its preparation method, belong to polymer sealing material technical field.The sealing strip includes the following weight parts components: raw rubber 100 parts, modified alumina filler 18-25 parts, vulcanizing agent 1.2-1.5 parts, crosslinking auxiliary 0.7-1 part and processing auxiliary 0.5-0.8 part;Wherein, modified alumina filler is treated with surface modifier coating, the surface modifier is obtained by diethylene glycol amine and allyl chloride substitution reaction intermediate, intermediate and long-chain alkyl dichlorosilane substitution reaction are obtained modified monomer, again with end hydrogen silicone oil is prepared by silicon hydrogen addition reaction;The surface modifier of the application forms complete coating flexible molecular brush layer and gradual modulus interface transition zone on the surface of alumina, significantly improves the dispersity and interface compatibility of filler in the silicon rubber matrix, and the obtained sealing strip has excellent low-temperature flexibility, mechanical strength and outstanding low-temperature dynamic sealing durability.

The invention belongs to the technical field of semiconductors, and particularly relates to a trichlorosilane purification system and method for electronic-grade polycrystalline silicon production, and the trichlorosilane purification system comprises a coarse separation rectifying tower which is used for removing a first light component and a first heavy component in a hydrogenation incoming material to obtain a first mixture, the first mixture comprises trichlorosilane, silicon tetrachloride and methyl dichlorosilane; the first-stage rectifying tower is connected with the coarse separation rectifying tower and is used for separating trichlorosilane in the first mixture to obtain a trichlorosilane crude product and a second mixture, and the second mixture comprises silicon tetrachloride and methyl dichlorosilane; and the refining unit is connected with the primary rectifying tower and is used for refining and rectifying the trichlorosilane crude product to obtain purified trichlorosilane. According to the system, methyl dichlorosilane is enriched in silicon tetrachloride by virtue of interaction of silicon tetrachloride and methyl dichlorosilane, so that a relatively large removal amount of trichlorosilane is avoided, meanwhile, the quality fluctuation of trichlorosilane is reduced, and the purity of trichlorosilane is improved.

The application discloses a preparation method of electronic-grade methylsilane with high safety and low cost, which comprises the following steps: methyl dichlorosilane is subjected to hydrogen-chlorine atom rearrangement reaction under the action of a catalyst, and the reaction product is separated to obtain electronic-grade methylsilane. The methylsilane is prepared through catalytic hydrogen-chlorine atom rearrangement in one step under the action of the catalyst, no solid by-product is generated, the conversion efficiency is high, the whole system is a closed system, the materials are conveyed in the system through a pump or pressure difference, and the system is easy to be automatically controlled, safe and stable to operate. The production cost is low, and the electronic-grade product meeting the requirements of the semiconductor industry can be easily prepared. The whole process is logical, safe and reliable to operate, the separation and purification of each reaction product is clear and definite, the purification process is simple and efficient, and the electronic-grade methylsilane with a purity of greater than or equal to 99.999% meeting the requirements of the semiconductor industry can be obtained through single-step refining.

The invention provides a process method and a catalyst for synergistic treatment of organic silicon by-products, and the method comprises the following steps: adjusting the ratio of the organic silicon by-products, mixing a methyl-containing carbon source into the organic silicon by-products, and carrying out catalytic cracking reaction on the obtained mixed material under the action of cracking gas to obtain the organic silicon by-products. A catalytic product containing a dimethyl dichlorosilane monomer and a trimethylmonochlorosilane monomer is obtained; wherein the active element of the catalyst comprises any one or a combination of at least two of aluminum, zinc, copper, calcium, barium or magnesium. Cooperative treatment of various by-products in the production process of the organic silicon monomer is achieved, directional reconstruction of silicon, methyl and chlorine functional groups is achieved, and high-value dimethyldichlorosilane and trimethylchlorosilane monomers are prepared. The utilization rate of the synergistic treatment of the organic silicon by-products exceeds 90%, the selectivity of M2 exceeds 50%, and the selectivity of M3 exceeds 20%, so that the high-value utilization level of the by-products in the organic silicon industry is greatly improved, and a way for reducing the cost and improving the efficiency is provided.

The application belongs to the technical field of semiconductors, and particularly relates to a method for recycling tail gas components of rod-shaped silicon carbide and a rod-shaped silicon carbide production system. The method comprises the following steps: setting a tail gas constant-temperature decomposition part to completely decompose methylchlorosilane which is not completely reacted, and generating a gas with stable components, thereby avoiding the influence of methylchlorosilane and other components in the tail gas on the utilization of the tail gas, and solving the problems of complex recovery process and high cost. The method can promote the tail gas to generate more trichlorosilane, dichlorosilane, silicon tetrachloride and methane. The special tail gas constant-temperature decomposition part can realize the deposition and growth of silicon carbide without affecting the deposition and growth of silicon carbide, and can realize the recycling of trichlorosilane, dichlorosilane and other materials for the production of polysilicon by adjusting the temperature and pressure of the tail gas. Furthermore, the recycling of silicon tetrachloride and methane can also be realized through hydrogenation reaction and cracking reaction, thereby facilitating the recycling of the tail gas of silicon carbide deposition, being beneficial to improving the utilization rate of raw materials, and reducing the production cost.

The invention discloses a self-cleaning scratch-resistant externally-pasted glass film and a preparation method thereof, and relates to the field of film materials. When the self-cleaning scratch-resistant externally-pasted glass film is prepared, 4-hydroxymethyl phenylboronic acid reacts with triethanolamine and then is polymerized with itaconic acid, 1, 4-succinic acid and 1, 4-butanediol, and modified polyester is prepared; the preparation method comprises the following steps: enabling chitosan to react with 1, 3-di (tert-butylcarbonyl)-2-methyl-2-thiourea and diphenyl vinylphosphonate in sequence, so as to prepare modified chitosan; the preparation method comprises the following steps: firstly hydrolyzing and then cracking nonafluorohexyl methyl dichlorosilane, and finally polymerizing the nonafluorohexyl methyl dichlorosilane with octamethylcyclotetrasiloxane and diallyltetramethyldisiloxane to prepare the allyl-terminated fluorine-containing silicone oil. And crushing the modified chitosan, and mixing the crushed modified chitosan with the modified polyester and the allyl-terminated fluorine-containing silicone oil to prepare a film, thereby obtaining the self-cleaning scratch-resistant externally-pasted glass film. The self-cleaning scratch-resistant externally-pasted glass film prepared by the preparation method disclosed by the invention has flame-retardant and antibacterial capabilities.

The invention discloses a polyethylene composition as well as a preparation method and application thereof. The polyethylene composition is prepared from the following components in parts by weight: 69 to 91 parts of polyethylene, 0.8 to 1.2 parts of fumed silica, 10 to 15 parts of brominated flame retardant, 3 to 5 parts of antimony flame retardant and 5 to 10 parts of metal hydroxide, the fumed silica is fumed silica of which the surface is modified by a methylsilane organic matter; the nitrogen adsorption specific surface area of the fumed silica is 100-200m < 2 > / g; and the methylsilane organic matter is selected from at least one of monomethyl dichlorosilane, dimethyl dichlorosilane, polydimethylsiloxane and hexamethylsilazane. The polyethylene composition provided by the invention has excellent flame retardance, low heat release and low smoke amount; in addition, the composition also has excellent bending and whitening resistance.

The invention provides a preparation process of silane, which comprises the following steps: carrying out primary disproportionation reaction on trichlorosilane under the action of a liquid catalyst, and simultaneously carrying out rectification separation to obtain dichlorosilane; dichlorosilane obtained through the first-stage disproportionation reaction is subjected to a second-stage disproportionation reaction under the action of a solid catalyst, and meanwhile, rectification separation is performed to obtain silane; wherein the liquid catalyst is fatty amine liquid with 12 or more carbon atoms and a tertiary amine group; the solid catalyst is ion exchange resin containing tertiary amine or quaternary amine; the problem that the solid catalyst is easy to inactivate due to high temperature in the disproportionation reaction of trichlorosilane is solved, the preparation process of the silane can be simplified, and the yield of the silane is increased.

The invention provides long-chain branched linear low-density polyethylene and a preparation method thereof. The preparation method comprises the following steps: carrying out a copolymerization reaction on chlorosilane functionalized non-conjugated alpha, omega-diene, ethylene and a comonomer in the presence of a metallocene catalyst, an alkane solvent and hydrogen for 12-72 hours, introducing excessive water vapor, and carrying out a hydrolysis reaction for 1-4 hours to obtain the long-chain branched linear low-density polyethylene, wherein the chlorosilane functionalized non-conjugated alpha, omega-diene comprises one or a combination of more than two of bis (5-hexenyl) dichlorosilane, bis (5-octenyl) dichlorosilane, bis (7-octenyl) dichlorosilane, (5-hexenyl) trichlorosilane, (7-octenyl) trichlorosilane and (7-octenyl) tetrachlorosilane. The polyethylene has higher melt strength and is suitable for being applied to the processing fields of extrusion foaming, blow molding, thermal forming and the like.

The application provides a high-boiling substance recovery method, and relates to the technical field of polysilicon, which comprises the following steps: S1, atomizing or vaporizing the high-boiling substance to obtain atomized high-boiling substance or vaporized high-boiling substance; S2, cracking the atomized high-boiling substance or the vaporized high-boiling substance into a mixture comprising trichlorosilane, silicon tetrachloride, dichlorosilane and low-boiling substance; S3, condensing the mixture obtained in the step S2; and S4, rectifying the mixture condensed in the step S3. In the step S2, when the atomized high-boiling substance or the vaporized high-boiling substance is cracked, the atomized high-boiling substance or the vaporized high-boiling substance is fed into a plasma reactor. After the atomized high-boiling substance or the vaporized high-boiling substance enters the plasma reaction area, the unstable silicon-silicon bond in the atomized high-boiling substance or the vaporized high-boiling substance is broken by high temperature, and the broken chain molecules are grafted to form raw materials required for polysilicon production, such as trichlorosilane and silicon tetrachloride, so that the high-boiling substance in the high-boiling storage tank can be effectively utilized.

This application relates to a method for forming a silicon nitride passivation film, a method for manufacturing a semiconductor device, and a semiconductor device. The method for forming a silicon nitride passivation film on a nitride semiconductor layer includes the following steps: introducing a substrate containing the nitride semiconductor layer into a reactor; replacing the atmosphere in the reactor from air to an ammonia (NH3) atmosphere or a hydrogen (H2) atmosphere; raising the temperature in the reactor to a first temperature; maintaining the temperature in the reactor at the first temperature and maintaining the atmosphere in the reactor as an NH3 or H2 atmosphere for at least three minutes; lowering the temperature in the reactor to a second temperature below the first temperature; and forming the silicon nitride passivation film by supplying dichlorosilane (SiH2Cl2) into the reactor at a first pressure below 100 Pa.