58 results about "Dichlorosilane" patented technology

The invention relates to the field of copper-clad plates, and discloses a high-performance flame-retardant low-dielectric-loss copper-clad plate and a preparation method thereof.The copper-clad plate comprises epoxy resin, benzoxazine resin, composite filler, carboxyl-terminated nitrile rubber, an active diluent, a curing agent and the like; the composite filler is prepared by compounding flame-retardant modifier grafted graphene oxide and epoxy silane modified silicon dioxide hollow spheres; according to the flame-retardant modifier, boric acid and pentaerythritol are used for preparing a double-terminal hydroxyl boron-containing intermediate, then dichlorodiphenyl silane and phenylphosphonic dichloride react with hydroxyl groups at the two ends of the intermediate to prepare a flame-retardant intermediate, and amino silane and vanillic aldehyde react with chlorine atoms at the two ends of the intermediate to prepare an aldehyde modified flame-retardant intermediate; the copper-clad plate prepared by the preparation method disclosed by the invention is low in dielectric constant and dielectric loss, high in heat conductivity coefficient and good in flexibility, and also has excellent heat resistance and flame retardance.

The invention provides a photovoltaic glass surface self-cleaning coating and a preparation method thereof.The photovoltaic glass surface self-cleaning coating is prepared from a dehydrated organic solvent, 1-7 parts by mass of tetramethyl orthosilicate, 2-15 parts by mass of fluorosilane hydrophobic coupling agent, 10-20 parts by mass of silicon tetrachloride, 1-10 parts by mass of hydrophobic silane coupling agent, 5-15 parts by mass of dichloro (methyl) (3, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5- and 1-10 parts of 2, 3, 3-trifluoropropyl) silane and 1-10 parts of dimethyl dichlorosilane. According to the preparation method, tetramethyl silicate with relatively low reaction activity is used as a raw material to react with silicon tetrachloride to form an intermediate species with moderate activity, and then a linear chain polymer modification layer is pre-formed on the surface by utilizing the difference of reaction rates; a fluorosilane substance added in the coating also can participate in the reaction to form an organic silicon linear polymer with a fluorosilane side chain; in the recombination process of polysiloxane, perfluoro side chains with lower surface energy migrate to the surface of the coating; meanwhile, by adding the dichlorosilane coupling agent and the trichlorosilane coupling agent, the flexibility and hydrophobicity of the coating are improved.

This invention provides a weather-resistant metal protective coating and its preparation method. The weather-resistant metal protective coating comprises a modified epoxy resin, modified carbon nanotubes, a curing agent, an initiator, and a diluent. The modified epoxy resin is prepared by reacting epoxy resin sequentially with methyldodecyl dichlorosilane and hydroxyethyl methacrylate ethyl phosphate. The modified carbon nanotubes are prepared by reacting carboxylated carbon nanotubes with 3-(methacryloyloxy)propyltrimethoxysilane. The weather-resistant metal protective coating prepared by this invention exhibits excellent anti-corrosion, anti-aging, and mechanical properties.

The invention discloses a trichlorosilane deep rectification composite impurity removal process, and belongs to the technical field of polycrystalline silicon production raw material purification. According to the process, deep purification of crude trichlorosilane is achieved through the steps of pre-protection and primary adsorption, directional rectification enrichment of methyl dichlorosilane narrow fractions, concentration, mixing with silicon tetrachloride, catalytic reaction rectification conversion, differential pressure thermal coupling rectification purification, double-tank parallel deep purification, tail gas treatment and the like. According to the method, the impurity methyl dichlorosilane difficult to remove is precisely separated through side extraction, the impurity methyl dichlorosilane is converted into a component easy to separate through a catalytic reaction, and the boron and phosphorus impurities are deeply removed in combination with differential pressure thermal coupling energy saving and double-tank alternate adsorption. The process can efficiently remove moisture, metals and key impurities boron and phosphorus, obviously improves the purity of the trichlorosilane product, realizes gradient utilization of energy and hydrogen circulation, and has the advantages of high purity, low energy consumption and continuous production.

The application discloses a trimethylsilane purification system containing dichlorosilane impurities, comprising a reaction rectifying tower and a purification rectifying tower, and discloses a trimethylsilane purification method containing dichlorosilane impurities. Trimethylsilane gas containing dichlorosilane impurities enters the reaction rectifying tower, and the trimethylsilane gas containing dichlorosilane impurities enters a reaction section to react. Dichlorosilane impurities react to generate silane gas and material containing tetrachlorosilane impurities. The silane gas is discharged from a tower top exhaust port of the reaction rectifying tower, and the material containing tetrachlorosilane impurities is discharged from a tower bottom discharge port of the reaction rectifying tower and enters the purification rectifying tower. The high-purity trimethylsilane is collected in a tower top collecting port through rectification in the purification rectifying tower. The dichlorosilane impurities in the trimethylsilane can be effectively removed through the method disclosed by the application, high-purity trimethylsilane with a purity of more than 99.99% is obtained, the yield is greater than 85%, and the process is simple and low in cost.

The invention discloses a method for improving the stability of a thin film in a semiconductor device. In order to solve the problems of poor quality of a first oxide layer and unstable thickness of a silicon nitride layer in the prior art, the invention provides the following steps: when forming the first oxide layer on a substrate, depositing at least part of the first oxide layer, and then performing annealing treatment based on N2O-containing gas on the first oxide layer; forming a silicon nitride layer on the annealed first oxide layer; and finally, forming a second oxide layer on the silicon nitride layer. The key N2O annealing treatment not only can densify the first oxide layer, reduce defects and improve the quality of the first oxide layer, but also can effectively consume the dichlorosilane precursor remaining on the surface of the wafer, and guarantees the stability of a silicon source during the subsequent growth of the silicon nitride layer, thereby remarkably improving the thickness stability of the silicon nitride layer. The method improves the stability of the whole thin film structure, and facilitates the improvement of the performance and reliability of the device.

The present disclosure relates to methods of forming silicon-on-insulator substrates. A method of forming an SOI substrate includes performing a hydrogen thermal treatment on a pretreated sacrificial wafer at an elevated temperature. A stop layer and a semiconductor layer can be sequentially formed on a first surface of the sacrificial wafer on which the hydrogen (H2) thermal treatment was performed. The stop layer and the semiconductor layer can be formed by an epitaxial growth process using a hybrid precursor including monosilane (MS) and dichlorosilane (DCS) sources.

A method of forming an SOI substrate including a hydrogen thermal treatment performed on a pretreated sacrificial wafer, under high temperature. A stopper layer and a semiconductor layer may be sequentially formed on a first surface of the sacrificial wafer on which the hydrogen (H2) thermal treatment was performed. The stopper layer and the semiconductor layer may be formed by an epitaxial growth process using a mixed precursor including a monosilane (MS) source and a dichlorosilane (DCS) source.

The invention provides a preparation method of a modified binder, which comprises the following steps: firstly, synthesizing dimethyl silicon polyvinyl ester by taking polyvinyl alcohol and dimethyl dichlorosilane as raw materials, and then adding the synthesized dimethyl silicon polyvinyl ester into an organic binder for compounding to obtain the modified binder. The modified binder has higher heat resistance, flame retardance and waterproofness, can be applied to scenes with higher performance requirements on the binder, especially some scenes in which a welding technology cannot be used, such as underwater repair, an oil bin of a transport ship, a natural gas bin and the like, and the repair cost is reduced; the method can be used for a pipeline system and simplifies the repair process. The preparation method of the modified binder is green, environment-friendly and low in cost.

The application discloses a hydroxyl-terminated silicon oil containing fluorine and boron and a preparation method thereof, relates to the technical field of high polymer material preparation, and is prepared from dichlorosilane compounds, (3,3,3-trifluoropropyl) dichloromethylsilane and boron-containing acid through a hydrolysis-condensation method. The hydroxyl-terminated silicon oil containing fluorine and boron has a 5% weight loss temperature of 420-440 DEG C under N2 atmosphere and a glass transition temperature of -130 DEG C to -140 DEG C, and has a wide use temperature and can be applied in many extreme occasions.

An on-line moisture detection device for dimethyl dichlorosilane hydrolysis hydrogen chloride comprises a gas conveying pipeline, a cooler, a dryer and a compressor are sequentially arranged on the gas conveying pipeline in the conveying direction, a gas inlet branch pipe is arranged on the gas conveying pipeline between the cooler and the dryer and connected to a moisture detection mechanism, and the moisture detection mechanism is connected with the compressor. And the gas conveying pipeline between the dryer and the compressor is provided with another gas inlet branch pipe, and the gas inlet branch pipe is connected to another moisture detection mechanism. By adopting the structure, the moisture content of the product hydrogen chloride can be monitored and processed in real time, the moisture content in the product hydrogen chloride is effectively controlled, and the compressor is prevented from being damaged.

The invention belongs to the technical field of organic synthesis, and provides a synthesis method of diiodosilane. The synthesis method is carried out in a first reactor and a second reactor which are connected in series, and comprises the following steps: adding a first metal chloride, a solvent, dichlorosilane (DCS) and iodobenzene into the first reactor, and carrying out a pre-reaction; after the pre-reaction, continuously introducing a solvent, dichlorosilane and iodobenzene into the first reactor; meanwhile, enabling the pre-reaction feed liquid in the first reactor to continuously flow into a second reactor filled with a second metal chloride; the first reactor and the second reactor simultaneously react; and when the volume of the reaction material liquid in the second reactor reaches a target liquid level, continuously extracting and collecting the reaction material liquid in the second reactor to realize continuous preparation of diiodosilane. The synthesis method provided by the invention is high in dichlorosilane conversion rate.

The invention relates to a preparation method of diisopropylamine silane, which comprises the following steps: (1) reacting dichlorosilane with diisopropylamine to obtain diisopropylamine chlorosilane; and (2) carrying out a reaction on the diisopropylamine chlorosilane obtained in the step (1) and lithium hydride to obtain the diisopropylamine silane. The preparation method of diisopropylamine silane in the prior art is optimized, a complex catalyst does not need to be prepared in advance, raw materials are simple and easy to obtain, reaction steps are simple, high-temperature and high-pressure reaction conditions are avoided, the reaction conditions are mild, the obtained target product has high yield and purity, and industrial large-scale production is facilitated.

The invention belongs to the technical field of ceramic precursors, and particularly relates to a silicon-boron-carbon-nitrogen ceramic precursor with a main chain containing alkynyl and a preparation method of the silicon-boron-carbon-nitrogen ceramic precursor. Comprising the following steps: (1) dropwise adding an n-butyllithium solution into an ether solvent, stirring, continuously dropwise adding trichloroethylene, and reacting to obtain an alkynyl dilithium salt turbid solution; (2) adding boron trichloride into the alkynyl dilithium salt turbid solution to carry out primary dechlorination polycondensation reaction, and dropwise adding dichlorosilane to carry out secondary dechlorination polycondensation reaction after the reaction is completed; (3) adding hexamethyldisilazane into the system in the step (2) to carry out an end-capping reaction, collecting supernate after the reaction is finished, and distilling at normal pressure to remove the solvent, so as to obtain a silicon-boron-carbon-nitrogen ceramic precursor crude product; and (4) dissolving the silicon-boron-carbon-nitrogen ceramic precursor crude product in an organic solvent, carrying out dialysis treatment, and carrying out atmospheric distillation on the solution in a dialysis membrane to remove the solvent so as to obtain the silicon-boron-carbon-nitrogen ceramic precursor with the main chain containing alkynyl, and the ceramic yield of the silicon-boron-carbon-nitrogen ceramic precursor in the high-temperature ceramization process can reach more than 70%.

This invention relates to the field of metallocene linear low-density polyethylene (MDPE) preparation technology, and particularly to a method for preparing long-chain branched metallocene polyethylene. The method comprises the following steps: A polymerization reaction is carried out in a high-pressure stainless steel reactor. A metallocene catalyst is added to the reactor with dried alkane, followed by ethylene, comonomers, and hydrogen gas, which is then introduced into the reactor. A mixed solution of dichlorosilane-functionalized non-conjugated α,ω-dienes and white oil is then added to the reactor. After stabilizing the reaction for 12-72 hours, excess steam is introduced for hydrolysis. The mixture is stirred for 1-4 hours and then discharged to obtain long-chain branched metallocene polyethylene. This invention achieves controlled molecular structure with controlled long-chain branching content, resulting in a product with high branching degree, suitable branch length, and uniform distribution. This increases the number of branched active sites and their uniform distribution, leading to excellent mechanical properties and low haze.

This invention provides a method for forming an SOI (Silicon on Insulator) substrate. [Solution] A method for forming an SOI substrate 100 according to an embodiment of the present invention includes the steps of performing a high-temperature H2 heat treatment on a pre-treated sacrificial wafer 110, and sequentially forming a stopper layer 111 and a semiconductor layer 112 on a first surface of the heat-treated sacrificial wafer 110. The stopper layer 111 and the semiconductor layer 112 are formed by epitaxial growth using a mixed precursor consisting of monosilane (MS) and dichlorosilane (DCS), respectively.

The application relates to the field of copper-clad plates, and discloses a high-performance flame-retardant low-dielectric-loss copper-clad plate and a preparation method thereof.The copper-clad plate comprises epoxy resin, benzoxazine resin, composite filler, carboxyl-terminated nitrile rubber, active diluent, curing agent and the like; the composite filler is prepared by compounding graphene oxide grafted with a flame-retardant modifier and hollow-sphere silicon dioxide modified with an epoxy group silane; the flame-retardant modifier is prepared by using boric acid and pentaerythritol to prepare a boron-containing intermediate with two terminal hydroxyl groups, then using diphenyldichlorosilane and phenylphosphinic dichloride to react with the two terminal hydroxyl groups to prepare a flame-retardant intermediate, and using amino silane and vanillin to react with two terminal chlorine atoms respectively to prepare an aldehyde group modified flame-retardant intermediate, and finally integrating the aldehyde group modified flame-retardant intermediate into polyethylene imine through Schiff base reaction to prepare the composite filler; the copper-clad plate prepared by the application has low dielectric constant and dielectric loss, high thermal conductivity, good flexibility, excellent heat resistance and flame-retardant performance.

The invention discloses high-refraction phenyl silicone oil and a preparation method thereof, and relates to the technical field of organosilicone, the high-refraction phenyl silicone oil comprises the following raw materials: phenyl trichlorosilane, diphenyl dichlorosilane, methyl trichlorosilane, dimethyl dichlorosilane, hexamethyldisiloxane, a catalyst and a solvent; the preparation is performed based on the raw materials. According to the invention, by reasonably regulating and controlling the ratio of the phenyl trichlorosilane to the diphenyl dichlorosilane, premature crosslinking of the system is avoided while high refractive index is maintained; by introducing methyl trichlorosilane and dimethyl dichlorosilane, the flowability and viscosity are accurately adjusted, and the optical performance and the processability are both considered; and hexamethyldisiloxane is added in batches in the condensation stage to form a uniform end sealing structure, so that the high-refraction phenyl silicone oil with narrow molecular weight distribution and stable and controllable refractive index is obtained. The transparency and the thermal stability of the material are improved, and the bivariate accurate matching capability of the refractive index and the viscosity is remarkably improved.

The invention discloses polymethylsilane capable of regulating and controlling the C / Si atomic ratio and a preparation method and application thereof.The preparation method comprises the steps that metal sodium is cut and crushed, and metal sodium fragments are obtained; adding the metal sodium fragments into an organic solvent, and heating until the metal sodium is in a molten state to obtain a mixture; stirring and cooling the mixture to obtain a sodium sand mixture; mixing methyl dichlorosilane, allyl methyl dichlorosilane, tetrahydrofuran and 15-crown ether-5, and then dropwise adding the mixture into the sodium sand mixture to react; the sodium sand in the preparation method has the characteristics of uniform particle size, high activity and clean surface; tetrahydrofuran and 15-crown ether-5 are added into dichloromethylsilane and allyl methyldichlorosilane, so that the single electron transfer rate of metallic sodium to dichloromethylsilane can be increased, the reaction activation energy can be reduced, the reaction efficiency can be improved, the molecular structure can be optimized, the loss of carbon elements can be made up, and the problem that PMS is rich in silicon after pyrolysis can be solved.

This utility model discloses a system for removing impurities from carbon-containing chlorosilanes and recovering chlorosilanes, comprising: a first distillation column for receiving and concentrating carbon-containing chlorosilanes; a first adsorption and reaction device connected to the first distillation column, the first adsorption and reaction device being filled with a metal adsorbent material and equipped with a silicon tetrachloride feed pipeline; a second adsorption and reaction device connected to the first adsorption and reaction device, the second adsorption and reaction device being filled with a methyldichlorosilane adsorbent material; a second distillation column connected to the second adsorption and reaction device; and a third distillation column connected to the second distillation column. This utility model can adsorb and concentrate metal impurities in carbon-containing chlorosilanes as a catalyst for the carbon removal reaction, effectively avoiding deactivation and failure caused by metal impurities encapsulating the resin catalyst, improving the conversion rate of methyldichlorosilane, and effectively avoiding the disproportionation reaction of silicon trichloride in the presence of the resin catalyst, thereby improving the carbon removal efficiency and chlorosilane recovery efficiency.

The invention discloses a method for forming an oxide-nitride-oxide (ONO) dielectric layer in a flash memory, and aims at solving the problem of Flash reading interference. The method comprises the following steps: providing a substrate, and forming a first oxide layer on the substrate (preferably on a preformed floating gate); forming a silicon oxynitride (SiON) layer on the first oxide layer, wherein the forming process comprises introducing mixed gas containing dichlorosilane gas, ammonia gas and nitrous oxide gas into the reaction chamber for chemical vapor deposition; and forming a second oxide layer on the silicon oxynitride layer, and subsequently forming a control gate. By introducing nitrous oxide gas to form the SiON layer to replace a traditional silicon nitride layer, the number of traps in the dielectric layer is effectively reduced, and the electrical insulation performance is enhanced, so that the loss of floating gate electrons during reading operation is remarkably inhibited, the reading interference characteristic is improved, and the reliability of the flash memory is improved.

The invention relates to a method for preparing double-terminal alkylene disiloxane through a chlorosilane condensation / nucleophilic substitution reaction method, and belongs to the technical field of functional organosilicon compound preparation. The method comprises the following steps: by taking alkyl dichlorosilane as a raw material, carrying out condensation reaction on the alkyl dichlorosilane and a metal oxide in an organic solvent to obtain alkyl dichlorosiloxane; and further performing nucleophilic substitution reaction on the alkyl dichlorosiloxane and a Grignard reagent containing alkylene to obtain the double-terminal alkylene disiloxane. The raw material alkyl dichlorosilane adopted by the invention is a main product of an organic chlorosilane industrial production device, the raw material is abundant, and the raw material source is wide. Compared with a technical route taking vinyl chlorosilane as a raw material in the prior art, the method is more suitable for industrial application.

The invention relates to a scratch-resistant automobile film and a preparation method thereof, and belongs to the technical field of composite film materials. The vehicle film is of a multi-layer composite structure and sequentially comprises a pressure-sensitive adhesive layer, a TPU base film, a functional coating and a release film from inside to outside. The innovation is that the functional coating is formed by curing slurry containing a specific self-repairing anti-scratch agent, and the anti-scratch agent is prepared by reacting hydroxyl-terminated silicone oil with dichloromethylvinylsilane to form an alkenylation intermediate, then introducing an aldehyde group through mercaptoacetaldehyde click addition, and finally carrying out Mannich reaction with aminophenyl POSS (Polyhedral Oligomeric Silsesquioxane). Therefore, a composite structure of'POSS rigid core-dynamic imine bond-flexible thioether chain 'is constructed on an organic silicon side chain. Due to the structure, the coating has excellent scratch resistance, high light transmittance and efficient thermal stimulation response self-repairing capability.

The invention belongs to the technical field of high-performance special materials, and discloses a one-step method for preparing silicon alkyne resin MDPES. The method comprises the following steps: mixing 2-halophenylacetylene, dichlorosilane and a solvent, adding magnesium, and heating for reaction; after the reaction is finished, adding acid liquor for neutralization, and then extracting and layering to obtain an organic layer; then concentrating the organic layer to obtain a concentrated solution, and finally carrying out molecular distillation on the concentrated solution to prepare the silicon alkyne resin MDPES. Wherein the 2-halogen phenylacetylene comprises one of 2-iodine phenylacetylene, 2-bromophenylacetylene and 2-chlorophenylacetylene; and the molecular formula of the dichlorosilane is R1R2SiCl2. According to the method provided by the invention, the 2-halophenylacetylene and the dichlorosilane are subjected to one-step reaction in the anhydrous solvent to prepare the product with high purity and high yield. The method uses few raw materials, the preparation steps are simple, and the production efficiency is high; and the prepared product has the advantages of high yield, high purity, safety, environmental protection and easiness in industrialization.

The invention belongs to the technical field of organic synthesis, and particularly relates to a preparation method of cyclohexylmethyldimethoxysilane. The preparation method of cyclohexylmethyldimethoxysilane provided by the invention comprises the following steps: mixing cyclohexene, dichloromethylsilane and a platinum catalyst in a mixed atmosphere of oxygen and nitrogen, and then carrying out hydrosilylation reaction to obtain cyclohexylmethyldichlorosilane, the content of oxygen in the mixed atmosphere of oxygen and nitrogen is 100-200 ppm; and mixing the cyclohexylmethyl dichlorosilane and methanol, then carrying out a substitution reaction, and carrying out purification treatment on the system after the substitution reaction to obtain the cyclohexylmethyl dimethoxysilane. The cyclohexylmethyldimethoxysilane prepared by the preparation method provided by the invention has relatively high purity and yield.

The invention relates to the field of by-product treatment in organic silicon chemical production, and discloses a multistage separation method of oil in dimethyl dichlorosilane hydrolysis by-product acid. Comprising the following steps: S1, demulsification pretreatment: adding a demulsifier formed by compounding a specific cationic polymer and a nano inorganic material into hydrochloric acid of acid-containing oil which is a dimethyl dichlorosilane hydrolysis byproduct, and simultaneously applying ultrasonic treatment; s2, primary centrifugal separation: carrying out centrifugal separation on the mixed solution treated in the step S1 through a disc separator, and preliminarily separating an oil phase and an acid phase; and S3, secondary membrane separation: carrying out membrane separation on the acid phase obtained in the step S2 through a hydrophobic polymer hollow fiber membrane assembly. Compared with the prior art, the method has the advantages that by integrating innovative pretreatment, gradient separation and intelligent control technologies, efficient removal of oil in acid, high-quality recycling of hydrochloric acid and effective recovery of oil phase resources are achieved.

The invention provides a preparation method of hydrophobic nano silicon dioxide, which comprises the following steps: introducing dimethyl dichlorosilane gas and methyl trichlorosilane gas into hydrophilic nano silicon dioxide, and reacting at 250-400 DEG C to generate the hydrophobic nano silicon dioxide. The preparation method comprises the following steps: directly introducing dimethyl dichlorosilane and methyl trichlorosilane into hydrophilic nano silicon dioxide at the temperature of 250-400 DEG C in the form of gas, and directly reacting the dimethyl dichlorosilane and the methyl trichlorosilane at high temperature to obtain the hydrophobic nano silicon dioxide. Monomethyl trichlorosilane is taken as a main hydrophobic raw material, so that the production cost can be remarkably reduced, and in order to improve the yield of hydrophobic nano silicon dioxide obtained by monomethyl trichlorosilane and hydrophilic nano silicon dioxide, dimethyldichlorosilane gas is also used, so that the yield of the hydrophobic nano silicon dioxide is improved. The two gases jointly promote the mutual reaction with the hydrophilic nano silicon dioxide, so that low-cost and high-efficiency preparation of the hydrophobic nano silicon dioxide is realized.

The present application relates to trichlorosilane purification technical field, especially to a kind of trichlorosilane purification method and system, including following operating steps: S01: crude trichlorosilane is introduced into light component removal tower and removes light component;S02: after being treated by S01, crude trichlorosilane is extracted from light component removal tower kettle, and enters the lower part of extraction rectification tower, and is extracted with the extractant introduced in the upper part of extraction rectification tower;Boiling point difference of different components is utilized, and pure trichlorosilane in column top is separated, and extractant containing methyl dichlorosilane in column kettle;S03: pure trichlorosilane extracted from the top of extraction rectification tower is sent into heavy rectification tower and is purified, and high-purity trichlorosilane is exported from the top after purification and is ready for use, and silicon tetrachloride in column kettle is introduced into step S02 as extractant;S04: the extractant containing methyl dichlorosilane extracted from the column kettle of extraction rectification tower is sent into desolventizing kettle and is recovered and purified, and methyl dichlorosilane is removed from the top after purification, and silicon tetrachloride extracted from the column kettle is introduced into the upper part of extraction rectification tower as extractant.Can effectively improve the purification effect of trichlorosilane.

The invention discloses a feeding system of a polycrystalline silicon reduction furnace, which comprises a tail gas tank, a dichlorosilane tank, a hydrogen tank, a trichlorosilane tank, a nitrogen tank and a reduction furnace body, and a first feeding control valve is arranged on a pipeline between the tail gas tank and the reduction furnace body. A second feeding control valve is arranged on the pipeline between the dichlorosilane tank and the reduction furnace body, the hydrogen tank and the trichlorosilane tank are both connected with a mixing cavity, the mixing cavity is connected with the reduction furnace body, and a third feeding control valve is arranged on the pipeline between the hydrogen tank and the mixing cavity. And a fourth feeding control valve is arranged on the pipeline between the trichlorosilane tank and the mixing cavity. According to the feeding system of the polycrystalline silicon reduction furnace, the feeding mode and components of the reduction furnace are changed, the deposition rate and the conversion rate of a reduction reaction can be increased, power consumption can be reduced, generation of amorphous shapes caused by uneven gas fields can be effectively controlled, the product quality can be improved, and the effect of low cost can be finally achieved.

The invention relates to a preparation method of a silyl compound, and belongs to the technical field of organic chemistry. The preparation method of the silyl compound comprises the following steps: under a protective atmosphere, mixing perfluoroalkyl sulfonic acid and phenylsilane in an organic solvent, and carrying out a reflux reaction to obtain a reaction solution; the preparation method comprises the following steps: stirring and mixing organic amine and lithium alkylide in an organic solvent to obtain turbid liquid; mixing and refluxing the obtained turbid liquid and the obtained reaction liquid, carrying out solid-liquid separation to take a liquid phase, and concentrating and rectifying to obtain the silane-based compound. According to the invention, phenylsilane and diphenyl silane are used for replacing traditional monochlorosilane and dichlorosilane, and the raw material is liquid, so that the whole process is safer and more efficient; and requirements on process equipment are low, the process is greatly simplified, and large-scale production is facilitated.