77 results about "Dichlorosilane" patented technology

The invention relates to the field of copper-clad plates, and discloses a high-performance flame-retardant low-dielectric-loss copper-clad plate and a preparation method thereof.The copper-clad plate comprises epoxy resin, benzoxazine resin, composite filler, carboxyl-terminated nitrile rubber, an active diluent, a curing agent and the like; the composite filler is prepared by compounding flame-retardant modifier grafted graphene oxide and epoxy silane modified silicon dioxide hollow spheres; according to the flame-retardant modifier, boric acid and pentaerythritol are used for preparing a double-terminal hydroxyl boron-containing intermediate, then dichlorodiphenyl silane and phenylphosphonic dichloride react with hydroxyl groups at the two ends of the intermediate to prepare a flame-retardant intermediate, and amino silane and vanillic aldehyde react with chlorine atoms at the two ends of the intermediate to prepare an aldehyde modified flame-retardant intermediate; the copper-clad plate prepared by the preparation method disclosed by the invention is low in dielectric constant and dielectric loss, high in heat conductivity coefficient and good in flexibility, and also has excellent heat resistance and flame retardance.

The invention discloses a silicon nitride thin film deposition method and vertical LPCVD equipment. The method comprises the steps that S1, the standby temperature of a process cavity is set; s2, the wafer boat rises to a process position at a constant speed, and nitrogen is introduced between the inner pipe and the outer pipe; s3, closing the nitrogen, and vacuumizing the cavity; s4, introducing nitrogen into the cavity, and keeping the pressure in the cavity at P3; s5, evacuating the nitrogen in the cavity, and introducing ammonia gas; s6, under the condition that only ammonia gas flows, the pressure in the cavity is kept at P4; s7, introducing dichlorosilane into the cavity, and carrying out silicon nitride film deposition; s8, closing the dichlorosilane, keeping the ammonia gas flow unchanged, and consuming residual dichlorosilane; s9, removing ammonia gas; and S10, the process cavity recovers to normal pressure, the wafer boat descends at a constant speed, and nitrogen is introduced between the inner pipe and the outer pipe. The method has the characteristics of simple principle, high film forming stability, low pollution degree and the like, and overcomes the defect that the surface of the existing silicon nitride film is easily polluted by particles.

The invention provides a photovoltaic glass surface self-cleaning coating and a preparation method thereof.The photovoltaic glass surface self-cleaning coating is prepared from a dehydrated organic solvent, 1-7 parts by mass of tetramethyl orthosilicate, 2-15 parts by mass of fluorosilane hydrophobic coupling agent, 10-20 parts by mass of silicon tetrachloride, 1-10 parts by mass of hydrophobic silane coupling agent, 5-15 parts by mass of dichloro (methyl) (3, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5-trimethyl-1, 3, 5- and 1-10 parts of 2, 3, 3-trifluoropropyl) silane and 1-10 parts of dimethyl dichlorosilane. According to the preparation method, tetramethyl silicate with relatively low reaction activity is used as a raw material to react with silicon tetrachloride to form an intermediate species with moderate activity, and then a linear chain polymer modification layer is pre-formed on the surface by utilizing the difference of reaction rates; a fluorosilane substance added in the coating also can participate in the reaction to form an organic silicon linear polymer with a fluorosilane side chain; in the recombination process of polysiloxane, perfluoro side chains with lower surface energy migrate to the surface of the coating; meanwhile, by adding the dichlorosilane coupling agent and the trichlorosilane coupling agent, the flexibility and hydrophobicity of the coating are improved.

This invention provides a weather-resistant metal protective coating and its preparation method. The weather-resistant metal protective coating comprises a modified epoxy resin, modified carbon nanotubes, a curing agent, an initiator, and a diluent. The modified epoxy resin is prepared by reacting epoxy resin sequentially with methyldodecyl dichlorosilane and hydroxyethyl methacrylate ethyl phosphate. The modified carbon nanotubes are prepared by reacting carboxylated carbon nanotubes with 3-(methacryloyloxy)propyltrimethoxysilane. The weather-resistant metal protective coating prepared by this invention exhibits excellent anti-corrosion, anti-aging, and mechanical properties.

The carbon dioxide fire extinguishing system comprises the dichlorosilane gas holder, and a plurality of groups of carbon dioxide fire extinguishers are arranged on the left side of the interior of the dichlorosilane gas holder. The temperature monitor is used for monitoring the temperature in the dichlorosilane gas holder in real time, carbon dioxide is adopted as a fire extinguishing agent, fire disasters are rapidly and effectively extinguished, the whole process is automatic, equipment does not need to be manually started, and in a closed space, the situation that greater loss is caused by the fire disasters caused by dichlorosilane gas is effectively avoided, and the safety of the equipment is improved. The mode that a traditional fire extinguisher is manually used is changed, the situation that the fire extinguisher is hurt due to manual use is avoided, by arranging the opening and closing mechanism, workers can conveniently open the dichlorosilane gas holder and take out the carbon dioxide fire extinguisher from the dichlorosilane gas holder, and convenience and rapidness are achieved; and fire extinguishing can be carried out on any height and position of the dichlorosilane gas holder, no dead angle area exists, and the practicability is wide.

The invention discloses a trichlorosilane deep rectification composite impurity removal process, and belongs to the technical field of polycrystalline silicon production raw material purification. According to the process, deep purification of crude trichlorosilane is achieved through the steps of pre-protection and primary adsorption, directional rectification enrichment of methyl dichlorosilane narrow fractions, concentration, mixing with silicon tetrachloride, catalytic reaction rectification conversion, differential pressure thermal coupling rectification purification, double-tank parallel deep purification, tail gas treatment and the like. According to the method, the impurity methyl dichlorosilane difficult to remove is precisely separated through side extraction, the impurity methyl dichlorosilane is converted into a component easy to separate through a catalytic reaction, and the boron and phosphorus impurities are deeply removed in combination with differential pressure thermal coupling energy saving and double-tank alternate adsorption. The process can efficiently remove moisture, metals and key impurities boron and phosphorus, obviously improves the purity of the trichlorosilane product, realizes gradient utilization of energy and hydrogen circulation, and has the advantages of high purity, low energy consumption and continuous production.

The application discloses a trimethylsilane purification system containing dichlorosilane impurities, comprising a reaction rectifying tower and a purification rectifying tower, and discloses a trimethylsilane purification method containing dichlorosilane impurities. Trimethylsilane gas containing dichlorosilane impurities enters the reaction rectifying tower, and the trimethylsilane gas containing dichlorosilane impurities enters a reaction section to react. Dichlorosilane impurities react to generate silane gas and material containing tetrachlorosilane impurities. The silane gas is discharged from a tower top exhaust port of the reaction rectifying tower, and the material containing tetrachlorosilane impurities is discharged from a tower bottom discharge port of the reaction rectifying tower and enters the purification rectifying tower. The high-purity trimethylsilane is collected in a tower top collecting port through rectification in the purification rectifying tower. The dichlorosilane impurities in the trimethylsilane can be effectively removed through the method disclosed by the application, high-purity trimethylsilane with a purity of more than 99.99% is obtained, the yield is greater than 85%, and the process is simple and low in cost.

The invention discloses a method for improving the stability of a thin film in a semiconductor device. In order to solve the problems of poor quality of a first oxide layer and unstable thickness of a silicon nitride layer in the prior art, the invention provides the following steps: when forming the first oxide layer on a substrate, depositing at least part of the first oxide layer, and then performing annealing treatment based on N2O-containing gas on the first oxide layer; forming a silicon nitride layer on the annealed first oxide layer; and finally, forming a second oxide layer on the silicon nitride layer. The key N2O annealing treatment not only can densify the first oxide layer, reduce defects and improve the quality of the first oxide layer, but also can effectively consume the dichlorosilane precursor remaining on the surface of the wafer, and guarantees the stability of a silicon source during the subsequent growth of the silicon nitride layer, thereby remarkably improving the thickness stability of the silicon nitride layer. The method improves the stability of the whole thin film structure, and facilitates the improvement of the performance and reliability of the device.

The present disclosure relates to methods of forming silicon-on-insulator substrates. A method of forming an SOI substrate includes performing a hydrogen thermal treatment on a pretreated sacrificial wafer at an elevated temperature. A stop layer and a semiconductor layer can be sequentially formed on a first surface of the sacrificial wafer on which the hydrogen (H2) thermal treatment was performed. The stop layer and the semiconductor layer can be formed by an epitaxial growth process using a hybrid precursor including monosilane (MS) and dichlorosilane (DCS) sources.

A method of forming an SOI substrate including a hydrogen thermal treatment performed on a pretreated sacrificial wafer, under high temperature. A stopper layer and a semiconductor layer may be sequentially formed on a first surface of the sacrificial wafer on which the hydrogen (H2) thermal treatment was performed. The stopper layer and the semiconductor layer may be formed by an epitaxial growth process using a mixed precursor including a monosilane (MS) source and a dichlorosilane (DCS) source.

The invention provides a preparation method of a modified binder, which comprises the following steps: firstly, synthesizing dimethyl silicon polyvinyl ester by taking polyvinyl alcohol and dimethyl dichlorosilane as raw materials, and then adding the synthesized dimethyl silicon polyvinyl ester into an organic binder for compounding to obtain the modified binder. The modified binder has higher heat resistance, flame retardance and waterproofness, can be applied to scenes with higher performance requirements on the binder, especially some scenes in which a welding technology cannot be used, such as underwater repair, an oil bin of a transport ship, a natural gas bin and the like, and the repair cost is reduced; the method can be used for a pipeline system and simplifies the repair process. The preparation method of the modified binder is green, environment-friendly and low in cost.

The invention provides an experimental device and method for adsorbing and removing carbon-containing impurities in trichlorosilane. The experimental device comprises a nitrogen cylinder, a dryer, a feeding tank, an intermediate tank, a mass flow controller, an adsorption column, a sampler, a storage tank and a tail gas processor. After moisture of nitrogen is removed through a dryer, the nitrogen is used for pressurizing the device, a material in the feeding tank flows through an adsorption column through an intermediate tank under the action of pressure difference, methyl dichlorosilane in trichlorosilane is adsorbed and removed, the trichlorosilane is intermittently sampled from a sampler for analysis, and the remaining material enters a storage tank; the tail gas is emptied after being treated by the tail gas treater. According to the device, the methyl dichlorosilane can be adsorbed, meanwhile, materials are prevented from being in contact with moisture in air, more reliable experimental data are provided for industrial application, and corrosion to the device is reduced.

The application discloses a hydroxyl-terminated silicon oil containing fluorine and boron and a preparation method thereof, relates to the technical field of high polymer material preparation, and is prepared from dichlorosilane compounds, (3,3,3-trifluoropropyl) dichloromethylsilane and boron-containing acid through a hydrolysis-condensation method. The hydroxyl-terminated silicon oil containing fluorine and boron has a 5% weight loss temperature of 420-440 DEG C under N2 atmosphere and a glass transition temperature of -130 DEG C to -140 DEG C, and has a wide use temperature and can be applied in many extreme occasions.

An on-line moisture detection device for dimethyl dichlorosilane hydrolysis hydrogen chloride comprises a gas conveying pipeline, a cooler, a dryer and a compressor are sequentially arranged on the gas conveying pipeline in the conveying direction, a gas inlet branch pipe is arranged on the gas conveying pipeline between the cooler and the dryer and connected to a moisture detection mechanism, and the moisture detection mechanism is connected with the compressor. And the gas conveying pipeline between the dryer and the compressor is provided with another gas inlet branch pipe, and the gas inlet branch pipe is connected to another moisture detection mechanism. By adopting the structure, the moisture content of the product hydrogen chloride can be monitored and processed in real time, the moisture content in the product hydrogen chloride is effectively controlled, and the compressor is prevented from being damaged.

The invention belongs to the technical field of organic synthesis, and provides a synthesis method of diiodosilane. The synthesis method is carried out in a first reactor and a second reactor which are connected in series, and comprises the following steps: adding a first metal chloride, a solvent, dichlorosilane (DCS) and iodobenzene into the first reactor, and carrying out a pre-reaction; after the pre-reaction, continuously introducing a solvent, dichlorosilane and iodobenzene into the first reactor; meanwhile, enabling the pre-reaction feed liquid in the first reactor to continuously flow into a second reactor filled with a second metal chloride; the first reactor and the second reactor simultaneously react; and when the volume of the reaction material liquid in the second reactor reaches a target liquid level, continuously extracting and collecting the reaction material liquid in the second reactor to realize continuous preparation of diiodosilane. The synthesis method provided by the invention is high in dichlorosilane conversion rate.

The invention relates to a preparation method of diisopropylamine silane, which comprises the following steps: (1) reacting dichlorosilane with diisopropylamine to obtain diisopropylamine chlorosilane; and (2) carrying out a reaction on the diisopropylamine chlorosilane obtained in the step (1) and lithium hydride to obtain the diisopropylamine silane. The preparation method of diisopropylamine silane in the prior art is optimized, a complex catalyst does not need to be prepared in advance, raw materials are simple and easy to obtain, reaction steps are simple, high-temperature and high-pressure reaction conditions are avoided, the reaction conditions are mild, the obtained target product has high yield and purity, and industrial large-scale production is facilitated.

The invention belongs to the technical field of ceramic precursors, and particularly relates to a silicon-boron-carbon-nitrogen ceramic precursor with a main chain containing alkynyl and a preparation method of the silicon-boron-carbon-nitrogen ceramic precursor. Comprising the following steps: (1) dropwise adding an n-butyllithium solution into an ether solvent, stirring, continuously dropwise adding trichloroethylene, and reacting to obtain an alkynyl dilithium salt turbid solution; (2) adding boron trichloride into the alkynyl dilithium salt turbid solution to carry out primary dechlorination polycondensation reaction, and dropwise adding dichlorosilane to carry out secondary dechlorination polycondensation reaction after the reaction is completed; (3) adding hexamethyldisilazane into the system in the step (2) to carry out an end-capping reaction, collecting supernate after the reaction is finished, and distilling at normal pressure to remove the solvent, so as to obtain a silicon-boron-carbon-nitrogen ceramic precursor crude product; and (4) dissolving the silicon-boron-carbon-nitrogen ceramic precursor crude product in an organic solvent, carrying out dialysis treatment, and carrying out atmospheric distillation on the solution in a dialysis membrane to remove the solvent so as to obtain the silicon-boron-carbon-nitrogen ceramic precursor with the main chain containing alkynyl, and the ceramic yield of the silicon-boron-carbon-nitrogen ceramic precursor in the high-temperature ceramization process can reach more than 70%.

This invention relates to the field of metallocene linear low-density polyethylene (MDPE) preparation technology, and particularly to a method for preparing long-chain branched metallocene polyethylene. The method comprises the following steps: A polymerization reaction is carried out in a high-pressure stainless steel reactor. A metallocene catalyst is added to the reactor with dried alkane, followed by ethylene, comonomers, and hydrogen gas, which is then introduced into the reactor. A mixed solution of dichlorosilane-functionalized non-conjugated α,ω-dienes and white oil is then added to the reactor. After stabilizing the reaction for 12-72 hours, excess steam is introduced for hydrolysis. The mixture is stirred for 1-4 hours and then discharged to obtain long-chain branched metallocene polyethylene. This invention achieves controlled molecular structure with controlled long-chain branching content, resulting in a product with high branching degree, suitable branch length, and uniform distribution. This increases the number of branched active sites and their uniform distribution, leading to excellent mechanical properties and low haze.

The utility model provides a device for producing silane, monochlorosilane and dichlorosilane at the same time. The device comprises a first reactor, a second reactor, a trichlorosilane first separation tower, a trichlorosilane second separation tower, a silane crude separation tower, a silane rectification tower, a silane purification tower, a dichlorosilane buffer tank, a dichlorosilane delivery pump, a booster pump, a monochlorine / dichlorosilane crude separation tower, a dichlorosilane purification tower and a monochlorosilane purification tower. The trichlorosilane first separation tower / the trichlorosilane second separation tower is used for recovering trichlorosilane in circulating material flow, a booster pump is arranged at the bottom of the trichlorosilane first separation tower, and due to the fact that different rectification pressures are adopted and the two towers are coupled for heat exchange, energy consumption of the whole system is reduced; the operation is flexible and convenient; and the product at the bottom of the silane coarse separation tower is circulated to the trichlorosilane first separation tower for cyclic utilization, so that the utilization rate of by-products is improved, and the cost is saved.

This invention provides a method for forming an SOI (Silicon on Insulator) substrate. [Solution] A method for forming an SOI substrate 100 according to an embodiment of the present invention includes the steps of performing a high-temperature H2 heat treatment on a pre-treated sacrificial wafer 110, and sequentially forming a stopper layer 111 and a semiconductor layer 112 on a first surface of the heat-treated sacrificial wafer 110. The stopper layer 111 and the semiconductor layer 112 are formed by epitaxial growth using a mixed precursor consisting of monosilane (MS) and dichlorosilane (DCS), respectively.

The application relates to the field of copper-clad plates, and discloses a high-performance flame-retardant low-dielectric-loss copper-clad plate and a preparation method thereof.The copper-clad plate comprises epoxy resin, benzoxazine resin, composite filler, carboxyl-terminated nitrile rubber, active diluent, curing agent and the like; the composite filler is prepared by compounding graphene oxide grafted with a flame-retardant modifier and hollow-sphere silicon dioxide modified with an epoxy group silane; the flame-retardant modifier is prepared by using boric acid and pentaerythritol to prepare a boron-containing intermediate with two terminal hydroxyl groups, then using diphenyldichlorosilane and phenylphosphinic dichloride to react with the two terminal hydroxyl groups to prepare a flame-retardant intermediate, and using amino silane and vanillin to react with two terminal chlorine atoms respectively to prepare an aldehyde group modified flame-retardant intermediate, and finally integrating the aldehyde group modified flame-retardant intermediate into polyethylene imine through Schiff base reaction to prepare the composite filler; the copper-clad plate prepared by the application has low dielectric constant and dielectric loss, high thermal conductivity, good flexibility, excellent heat resistance and flame-retardant performance.

The invention discloses high-refraction phenyl silicone oil and a preparation method thereof, and relates to the technical field of organosilicone, the high-refraction phenyl silicone oil comprises the following raw materials: phenyl trichlorosilane, diphenyl dichlorosilane, methyl trichlorosilane, dimethyl dichlorosilane, hexamethyldisiloxane, a catalyst and a solvent; the preparation is performed based on the raw materials. According to the invention, by reasonably regulating and controlling the ratio of the phenyl trichlorosilane to the diphenyl dichlorosilane, premature crosslinking of the system is avoided while high refractive index is maintained; by introducing methyl trichlorosilane and dimethyl dichlorosilane, the flowability and viscosity are accurately adjusted, and the optical performance and the processability are both considered; and hexamethyldisiloxane is added in batches in the condensation stage to form a uniform end sealing structure, so that the high-refraction phenyl silicone oil with narrow molecular weight distribution and stable and controllable refractive index is obtained. The transparency and the thermal stability of the material are improved, and the bivariate accurate matching capability of the refractive index and the viscosity is remarkably improved.

The invention discloses polymethylsilane capable of regulating and controlling the C / Si atomic ratio and a preparation method and application thereof.The preparation method comprises the steps that metal sodium is cut and crushed, and metal sodium fragments are obtained; adding the metal sodium fragments into an organic solvent, and heating until the metal sodium is in a molten state to obtain a mixture; stirring and cooling the mixture to obtain a sodium sand mixture; mixing methyl dichlorosilane, allyl methyl dichlorosilane, tetrahydrofuran and 15-crown ether-5, and then dropwise adding the mixture into the sodium sand mixture to react; the sodium sand in the preparation method has the characteristics of uniform particle size, high activity and clean surface; tetrahydrofuran and 15-crown ether-5 are added into dichloromethylsilane and allyl methyldichlorosilane, so that the single electron transfer rate of metallic sodium to dichloromethylsilane can be increased, the reaction activation energy can be reduced, the reaction efficiency can be improved, the molecular structure can be optimized, the loss of carbon elements can be made up, and the problem that PMS is rich in silicon after pyrolysis can be solved.

This utility model discloses a system for removing impurities from carbon-containing chlorosilanes and recovering chlorosilanes, comprising: a first distillation column for receiving and concentrating carbon-containing chlorosilanes; a first adsorption and reaction device connected to the first distillation column, the first adsorption and reaction device being filled with a metal adsorbent material and equipped with a silicon tetrachloride feed pipeline; a second adsorption and reaction device connected to the first adsorption and reaction device, the second adsorption and reaction device being filled with a methyldichlorosilane adsorbent material; a second distillation column connected to the second adsorption and reaction device; and a third distillation column connected to the second distillation column. This utility model can adsorb and concentrate metal impurities in carbon-containing chlorosilanes as a catalyst for the carbon removal reaction, effectively avoiding deactivation and failure caused by metal impurities encapsulating the resin catalyst, improving the conversion rate of methyldichlorosilane, and effectively avoiding the disproportionation reaction of silicon trichloride in the presence of the resin catalyst, thereby improving the carbon removal efficiency and chlorosilane recovery efficiency.

The invention discloses a nitrogen recovery device with a filtering function, and relates to the technical field of gas filtering systems. The device comprises a first filtering system and a second filtering system, and the first filtering system is used for filtering mixed gas generated by a subsequent cleaning reactor in the dichlorosilane thermal decomposition reaction and recycling nitrogen; and the second filtering system is used for filtering mixed gas generated by the subsequent cleaning reactor in the silicon nitride deposition reaction and recycling nitrogen. By arranging the first filtering system and the second filtering system, nitrogen waste gas generated in different working procedures is treated respectively, two kinds of nitrogen containing different gas impurities are separated before filtering, meanwhile, different filtering devices are adopted for independently filtering the two kinds of nitrogen waste gas respectively, and the filtering efficiency is improved. And finally, hydrogen in the nitrogen gas is removed until the content of the gas reaction source in the nitrogen gas is greatly reduced, so that the nitrogen gas is purified for multiple times, and more by-products cannot be generated in the filtering process of the nitrogen gas.

The invention discloses a method for forming an oxide-nitride-oxide (ONO) dielectric layer in a flash memory, and aims at solving the problem of Flash reading interference. The method comprises the following steps: providing a substrate, and forming a first oxide layer on the substrate (preferably on a preformed floating gate); forming a silicon oxynitride (SiON) layer on the first oxide layer, wherein the forming process comprises introducing mixed gas containing dichlorosilane gas, ammonia gas and nitrous oxide gas into the reaction chamber for chemical vapor deposition; and forming a second oxide layer on the silicon oxynitride layer, and subsequently forming a control gate. By introducing nitrous oxide gas to form the SiON layer to replace a traditional silicon nitride layer, the number of traps in the dielectric layer is effectively reduced, and the electrical insulation performance is enhanced, so that the loss of floating gate electrons during reading operation is remarkably inhibited, the reading interference characteristic is improved, and the reliability of the flash memory is improved.

The invention provides an embedded germanium-silicon device and a manufacturing method thereof, and belongs to the field of semiconductors. The embedded germanium-silicon device comprises the following steps: providing a substrate, wherein the substrate is provided with a groove; cleaning the inner wall of the groove; after processing, a germanium-silicon strain layer structure and a silicon cap layer structure are sequentially formed at the bottom of the groove, the germanium-silicon strain layer structure is deposited at the bottom of the groove, and the silicon cap layer structure wraps the germanium-silicon strain layer structure. According to the invention, the silicon cap layer structure is alternately formed by respectively taking dichlorosilane and silane as silicon sources, so that the germanium-silicon strain layer structure can be completely coated, an isolation effect is achieved, and the germanium-silicon strain layer structure is prevented from being exposed. Therefore, unstable germanium-silicon alloy can be prevented from being generated in the subsequent metallization process, the contact resistance of the source / drain region is reduced, and the silicon cap layer structure is uniformly distributed. In addition, the side wall of the silicon cap layer structure can be enhanced, so that the stability of the germanium-silicon strain layer structure can be enhanced, and the performance of the device is improved.

The utility model discloses a chlorosilane raw material purification system for reducing donor and acceptor impurities in polycrystalline silicon, which belongs to the technical field of polycrystalline silicon production and comprises a first rectifying tower, the first rectifying tower is connected with a chlorosilane raw material pipe, a first silicon tetrachloride outlet pipe and a first connecting pipe, and the first connecting pipe is connected with a second rectifying tower. The second rectifying tower is connected with a second connecting pipe and a third connecting pipe, the second connecting pipe is connected with a third rectifying tower, the third rectifying tower is connected with a fourth connecting pipe and a fifth connecting pipe, the fourth connecting pipe is connected with a fourth rectifying assembly, and the fourth rectifying assembly is connected with a product liquid outlet pipe and a chlorosilane raw material tank; the fifth connecting pipe is connected with the first cooler and the first adsorber, and the first adsorber is connected with the chlorosilane raw material tank. According to the utility model, high-purity trichlorosilane is obtained; dichlorosilane in the chlorosilane raw material reacts with silicon tetrachloride in the reactor to obtain trichlorosilane, so that the utilization rate of chlorosilane is further increased.

The invention relates to a method for preparing double-terminal alkylene disiloxane through a chlorosilane condensation / nucleophilic substitution reaction method, and belongs to the technical field of functional organosilicon compound preparation. The method comprises the following steps: by taking alkyl dichlorosilane as a raw material, carrying out condensation reaction on the alkyl dichlorosilane and a metal oxide in an organic solvent to obtain alkyl dichlorosiloxane; and further performing nucleophilic substitution reaction on the alkyl dichlorosiloxane and a Grignard reagent containing alkylene to obtain the double-terminal alkylene disiloxane. The raw material alkyl dichlorosilane adopted by the invention is a main product of an organic chlorosilane industrial production device, the raw material is abundant, and the raw material source is wide. Compared with a technical route taking vinyl chlorosilane as a raw material in the prior art, the method is more suitable for industrial application.

The invention relates to a scratch-resistant automobile film and a preparation method thereof, and belongs to the technical field of composite film materials. The vehicle film is of a multi-layer composite structure and sequentially comprises a pressure-sensitive adhesive layer, a TPU base film, a functional coating and a release film from inside to outside. The innovation is that the functional coating is formed by curing slurry containing a specific self-repairing anti-scratch agent, and the anti-scratch agent is prepared by reacting hydroxyl-terminated silicone oil with dichloromethylvinylsilane to form an alkenylation intermediate, then introducing an aldehyde group through mercaptoacetaldehyde click addition, and finally carrying out Mannich reaction with aminophenyl POSS (Polyhedral Oligomeric Silsesquioxane). Therefore, a composite structure of'POSS rigid core-dynamic imine bond-flexible thioether chain 'is constructed on an organic silicon side chain. Due to the structure, the coating has excellent scratch resistance, high light transmittance and efficient thermal stimulation response self-repairing capability.