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Formation of silicon nitride film by using atomic layer deposition method

一种氮化硅膜、硅氮化物的技术，应用在涂层、气态化学镀覆、金属材料涂层工艺等方向，能够解决不能实现应力强度、氮化硅膜湿蚀刻速率大、氮化硅膜膜应力低等问题

Active Publication Date: 2006-10-04
TOKYO ELECTRON LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the wet etching rate of the silicon nitride film formed at low temperature by the ALD method is high, so the etching selectivity (selection ratio) to the oxide film is small.
In addition, the silicon nitride film formed at low temperature has low film stress and cannot achieve the desired stress intensity.

Method used

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  • Formation of silicon nitride film by using atomic layer deposition method
  • Formation of silicon nitride film by using atomic layer deposition method
  • Formation of silicon nitride film by using atomic layer deposition method

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Embodiment Construction

[0023] Preferred embodiments of the present invention will be described below with reference to the drawings. In the exemplary embodiments described below, a batch type vertical processing apparatus is used as the silicon nitride film forming apparatus.

[0024] Such as figure 1 As shown, the longitudinal direction of the processing device 1 has a substantially cylindrical reaction tube 2 facing the vertical direction. The reaction tube 2 is made of a material excellent in heat resistance and corrosion resistance, for example, quartz.

[0025] The exhaust unit 3 is disposed on one side of the reaction tube 2 and is used to exhaust the gas in the reaction tube 2 . The exhaust part 3 is provided on the side wall of the reaction tube 2 and communicates with the reaction tube 2 through an opening (not shown) extending upward along the reaction tube 2 . The upper end of the exhaust part 3 is connected to the exhaust port 4 arranged at the upper part of the reaction tube 2 . An ...

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Abstract

Disclosed is a method of forming a silicon nitride film which can form a silicon nitride film having a high film stress at a low process temperature. The method includes the steps of (a) supplying dichlorosilane into a reaction chamber containing a process object, thereby allowing chemical species originated from dichlorosilane as a precursor to be adsorbed on the process object; (b) hydrogenating chlorine contained in the chemical species, thereby removing the chlorine from the chemical species; and (c) supplying ammonia radicals into the reaction chamber, thereby nitriding the chemical species, from which the chlorine has been removed, by the ammonia radicals to, deposit resultant silicon nitride on the process object, wherein the steps (a), (b) and (c) are performed repeatedly for plural times in that order, thereby a silicon nitride film of a desired thickness is formed on a semiconductor wafer.

Description

technical field [0001] The present invention relates to a technique for forming a silicon nitride film using atomic layer deposition (ALD: Atomic Layer Deposition). Background technique [0002] The manufacturing process of a semiconductor device includes a process of forming a silicon nitride film on an object to be processed, for example, a semiconductor wafer, using an ALD method. [0003] The ALD method is a kind of gas composed of two (or more than two) raw materials used for film formation under certain film formation conditions (temperature, time, etc.), which are alternately supplied to the substrate one by one, with one atomic layer Unit adsorption is a method of film formation using surface reactions. For example, along the surface of the object to be processed, the first raw material gas and the second raw material gas are alternately flowed, so that the raw material gas molecules in the first raw material gas are adsorbed on the surface of the processed object, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/318C23C16/34C23C16/44
CPCC23C16/45542C23C16/345C23C16/45546H01L21/0228H01L21/02274C23C16/45553H01L21/0217H01L21/02211
Inventor 松浦广行
Owner TOKYO ELECTRON LTD
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