113results about How to "Reduce the probability of deposition" patented technology

Etch profile control with pulsed gas flow and its applications to etching such as anisotropic etching of high aspect ratio features and etching of self-aligned contact structures in various processes. Pulsing can be applied according to this invention to the flow rate of a gas such as an etchant gas, a gas that leads to the deposition of a protective layer, a gas that modifies the deposition of a protective layer, and a gas that modifies etching.

To form a microcrystalline semiconductor with high quality which can be directly formed at equal to or less than 500° C. over a large substrate with high productivity without decreasing a deposition rate. In addition, to provide a photoelectric conversion device which employs the microcrystalline semiconductor as a photoelectric conversion layer. A reactive gas containing helium is supplied to a treatment chamber which is surrounded by a plurality of juxtaposed waveguides and a wall, the pressure in the treatment chamber is maintained at an atmospheric pressure or a subatmospheric pressure, microwave is supplied to a space sandwiched between the juxtaposed waveguides to generate plasma, and a photoelectric conversion layer of a microcrystalline semiconductor is deposited over a substrate which is placed in the treatment chamber.

A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections positioned very close to the upper and lower surface of the wafer. The gas heated by the side sections and the heated side sections themselves quickly heat the wafer to a desired temperature. Process gas directed to the “device side” of the wafer can be kept at a temperature that will not cause deposition on that side section, but yet the desired wafer temperature can be obtained by heating non-process gas from the other side section to the desired temperature. A plurality of passages around the periphery of the wafer on the non-processed side can be employed to provide purge gas flow that prevents process gas from reaching the non-processed side of the wafer and the adjacent area of that side section.

It is an object to form a high-quality crystalline semiconductor layer directly over a large-sized substrate with high productivity without reducing the deposition rate and to provide a photoelectric conversion device in which the crystalline semiconductor layer is used as a photoelectric conversion layer. A photoelectric conversion layer formed of a semi-amorphous semiconductor is formed over a substrate as follows: a reaction gas is introduced into a treatment chamber where the substrate is placed; and a microwave is introduced into the treatment chamber through a slit provided for a waveguide that is disposed in approximately parallel to and opposed to the substrate, thereby generating plasma. By forming a photoelectric conversion layer using such a semi-amorphous semiconductor, a rate of deterioration in characteristics by light deterioration is decreased from one-fifth to one-tenth, and thus a photoelectric conversion device that has almost no problems for practical use can be obtained.

Hollow metal nanoparticles and methods for their manufacture are disclosed. In one embodiment the metal nanoparticles have a continuous and nonporous shell with a hollow core which induces surface smoothening and lattice contraction of the shell. In a particular embodiment, the hollow nanoparticles have an external diameter of less than 20 nm, a wall thickness of between 1 nm and 3 nm or, alternatively, a wall thickness of between 4 and 12 atomic layers. In another embodiment, the hollow nanoparticles are fabricated by a process in which a sacrificial core is coated with an ultrathin shell layer that encapsulates the entire core. Removal of the core produces contraction of the shell about the hollow interior. In a particular embodiment the shell is formed by galvanic displacement of core surface atoms while remaining core removal is accomplished by dissolution in acid solution or in an electrolyte during potential cycling between upper and lower applied potentials.

An object is to provide a semiconductor device including a microcrystalline semiconductor film with favorable quality and a method for manufacturing the semiconductor device. In a thin film transistor formed using a microcrystalline semiconductor film, yttria-stabilized zirconia having a fluorite structure is formed in the uppermost layer of a gate insulating film in order to improve quality of a microcrystalline semiconductor film to be formed in the initial stage of deposition. The microcrystalline semiconductor film is deposited on the yttria-stabilized zirconia, so that the microcrystalline semiconductor film around an interface with a base particularly has favorable crystallinity while by crystallinity of the base.

The optical element includes photonic crystals respectively having different optical characteristics. These photonic crystals are formed in a plurality of regions on a single substrate. The optical element has a structure in which two or more kinds of media are nearly periodically deposited on one-dimensionally periodical grooves. Further, the grooves are different in direction according to locations on the deposited surface. A variety of optical elements each having different dependencies on polarization according to locations can be obtained. That is, portions or zones different in optical characteristics can be integrated on a single substrate.

The present invention provides methods for conformally or superconformally coating and/or uniformly filling structures with a continuous, conformal layer or superconformal layer. Methods of the present invention improve conformal or superconformal coverage of surfaces and improve fill in recessed features compared to conventional physical deposition and chemical deposition methods, thereby minimizing formation of voids or gaps in a deposited conformal or superconformal layer. The present methods are capable of coating or filling features useful for the fabrication of a broad class of electronic, electrical and electromechanical devices.

A process for manufacturing an FET device. A semiconductor substrate is covered with a gate dielectric layer and with a conductive gate electrode formed over the gate dielectric. Blanket layers of silicon oxide may be added. An optional collar of silicon nitride may be formed over the silicon oxide layer around the gate electrode. Two precleaning steps are performed. Chemical oxide removal gases are then deposited, covering the device with an adsorbed reactant film. The gate dielectric (aside from the gate electrode) is removed, as the adsorbed reactant film reacts with the gate dielectric layer to form a rounded corner of silicon oxide at the base of the gate electrode. One or two in-situ doped silicon layers are deposited over the source/drain regions to form single or laminated epitaxial raised source/drain regions over the substrate protruding beyond the surface of the gate dielectric.

The invention relates to a method for operating an arc source, whereby an electric spark discharge is ignited and run on the surface of a target and the spark discharge is simultaneously fed a direct current with an associated constant voltage DV as well as a pulsed current generated by a periodically applied voltage signal. The voltage at the arc source is boosted over several microseconds and the shape of the voltage signal is in essence arbitrarily selectable.

To improve a deposition rate of a microcrystalline semiconductor layer by using a deposition method and to improve productivity of a display device including a TFT of a microcrystalline semiconductor, a reactive gas containing helium is supplied to a treatment chamber surrounded with a plurality of juxtaposed waveguides and a wall surface; a microwave is supplied to a space which is interposed between juxtaposed waveguides to generate plasma while the pressure of the treatment chamber is held at an atmospheric pressure or a sub-atmospheric pressure typically a pressure of 1×10² Pa or more and 1×10⁵ Pa or less; and a microcrystalline semiconductor layer is deposited over a substrate placed in the treatment chamber. High density plasma is generated by providing slits on sides of the plurality of juxtaposed waveguides which face to another waveguide and supplying a microwave into the treatment chamber through the slit.

The invention discloses an elliptical tube H-shaped fin heat exchanger for waste heat recovery. The elliptical tube H-shaped fin heat exchanger comprises an elliptical heat exchange tube, a plurality of groups of H-shaped fins and a heat exchanger surface, wherein the H-shaped fins are sleeved on the surface of the heat exchange tube; the heat exchanger surface consists of non-uniform triangular small wings, which are elliptically arranged, on the surfaces of the H-shaped fins around the elliptical heat exchange tube. When dusty flue gas flows through the surfaces of the H-shaped fins, the small wings disturb the fluid to enhance the heat exchange on the tube wall and the downstream side, and meanwhile, the deposition of particles on the tube wall is reduced; the pressure drop can be reduced by the elliptical tube while the particle adhesion is reduced. A plurality of longitudinal vortexes are arranged in a non-uniform manner; at the front and rear edges of the wing, the size of the small wings and the windward attack angle are larger; on the middle parts of the H-shaped fins, the size of the small wings and the attack angle are smaller; by using the device, the heat exchange surface in different flow states can be enhanced respectively, the heat exchange of the fins are effectively enhanced, the pressure drop is reduced, and the deposition of dust particles in the flue gas on the heat exchange surface is reduced, so that the heat exchanger can operate efficiently for a long time in the dusty flue gas.

A metal-based/diamond laser composite coating preparation method includes: first selecting high-hardness metal powder and diamond powder of a proper grain size and shape; then uniformly mixing the high-hardness metal powder and diamond powder via a ball-milling method; and finally preparing a composite coating on a substrate by synchronously combining laser texturing technology, laser thermal treatment technology and cold spraying technology. The thickness of the composite coating is greater than 1 mm, and the volume content of diamond in the coating is greater than 45%. A metal-based/diamond laser composite coating is also provided.

A cold cathode ion gauge is provided that is suitable for use in a high vacuum and in the presence of contaminating gases. By decreasing the discharge current and, more precisely, decreasing the charge current density received by the gauge electrodes, and using certain type of materials for the gauge electrodes, the mechanism by which insulating films are deposited on surface of the electrodes is attenuated and the life of the gauge is significantly prolonged. The gauge discharge current can be decreased by providing a large resistor in series with the anode, while the charge current density can be decreased by using an electrode with larger surface area, which can be achieved by fabricating grooves or fans on electrodes and by using low electron backscattering and low secondary emission materials, like carbon. Another concept of constant current mode is also proposed in this invention for extending the lifetime of CCIGs that are used for vacuum containing unfriendly gases.

A multi-scale habitat information-based method and device for detecting and controlling water and fertilizer for crops in seedling stage: performing fusion analysis on multi-scale features of the water and fertilizer stress of crops on the basis of crop canopy-scale three-dimensional laser scanning information, foliage-scale polarization-hyperspectral imaging information, and micro-scale micro-CT scanning information; combining the real-time feedback of the temperature, humidity, illumination and substrate moisture content within a crop growing greenhouse; by means of multi-information fusion modeling, comprehensively determining and feeding back the water and fertilizer stress of the crops as well as water requirement and fertilizer requirement information, and providing policy information for the amount of fertilization and irrigation. On the basis of the policy information for water and fertilizer, and on the basis of frequency conversion speed control technology and pipeline constant pressure control technology, a water and fertilizer control system controls the pressure of a pipeline and the flow rate of the fertilizer by means of dynamically controlling the rotation speed of an irrigation pump and a fertilizer pump, and thus, combined with the dynamic feedback of an EC value, the accurate control of a liquid fertilizer ratio and irrigation volume is achieved.