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LED (Light Emitting Diode) chip provided with stepped current blocking structure and fabricating method thereof

The invention provides an LED (Light Emitting Diode) chip provided with a stepped current blocking structure and a fabricating method thereof. The fabricating method comprises the steps of: providing at least one LED epitaxial wafer comprising a substrate and a light emitting epitaxial structure on the LED epitaxial wafer; fabricating the stepped current blocking structure on the surface of the LED epitaxial wafer vertical to a region of a first electrode correspondingly prefabricated; and fabricating transparent conductive layers on the surfaces of the LED epitaxial wafer and the stepped current blocking structure, and then fabricating a first electrode, a second electrode and a protective layer correspondingly. According to the LED chip provided with a stepped current blocking structure and the fabricating method of the LED chip provided with the stepped current blocking structure provided by the invention, the gradient at the edge of the stepped current blocking structure is slowed so that the contact area of the transparent conductive layer and the stepped current blocking structure is increased, the situation that the transparent conductive layer (ITO) on the side wall (at the step) at the edge of the current blocking structure becomes thinner and even breaks can be avoided, the step covering capacity of the transparent conductive layer is improved, the current spreading capacity of the transparent conductive layer is further improved, the electro-optical conversion efficiency of the LED chip is increased, and the brightness of the LED chip is enhanced.
Owner:宁波安芯美半导体有限公司
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