198results about How to "Improve electro-optical conversion efficiency" patented technology

The invention relates to a Bragg refractive waveguide edge transmitting semiconductor laser with a low horizontal divergence angle, wherein the P electrode of the laser is placed on the top face of a cover layer and is electrically connected onto the cover layer; the N electrode is positioned on the back face of a substrate and is electrically connected to the substrate; a center cavity is positioned between an upper waveguide layer and a lower waveguide layer; an active area is inserted in the center cavity; a Bragg refractive waveguide formed by periodically distributing a plurality of layers of N-doped materials with a high refractive index and a low refractive index is adopted in the lower waveguide layer on; and a Bragg refractive waveguide formed by periodically distributing a plurality of layers of P-doped materials with a high refractive index and a low refractive index is adopted in the upper waveguide layer. The Bragg refractive waveguide edge transmitting semiconductor laser with the low horizontal divergence angle has the advantages that: effects such as catastrophic damage, hole burning, electric heat overburning, beam filamentization and the like on the end face of the traditional edge transmitting semiconductor laser can be effectively improved, and the laser can realize the large mode-volume and stable single-transverse-mode work because of the great gain loss difference between a basic mode and a high-order mode, the full wave at half maximum (FWHM) of the transverse far-field divergence angle of the laser can reach below 10 DEG.

A method of forming a highly doped layer of AlGaN, is practiced by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AlN layer is grown. The highly doped GaAlN layer is then formed having electron densities beyond 1×10²⁰ cm⁻³ at Al mole fractions up to 65% are obtained. These levels of doping application of n-type bulk, and n/p tunnel injection to short wavelength UV emitters. Some applications include light emitting diodes having wavelengths between approximately 254 and 290 nm for use in fluorescent light bulbs, hazardous materials detection, water purification and other decontamination environments. Lasers formed using the highly doped layers are useful in high-density storage applications or telecommunications applications. In yet a further embodiment, a transistor is formed utilizing the highly doped layer as a channel.

The invention provides an LED (Light Emitting Diode) chip provided with a stepped current blocking structure and a fabricating method thereof. The fabricating method comprises the steps of: providing at least one LED epitaxial wafer comprising a substrate and a light emitting epitaxial structure on the LED epitaxial wafer; fabricating the stepped current blocking structure on the surface of the LED epitaxial wafer vertical to a region of a first electrode correspondingly prefabricated; and fabricating transparent conductive layers on the surfaces of the LED epitaxial wafer and the stepped current blocking structure, and then fabricating a first electrode, a second electrode and a protective layer correspondingly. According to the LED chip provided with a stepped current blocking structure and the fabricating method of the LED chip provided with the stepped current blocking structure provided by the invention, the gradient at the edge of the stepped current blocking structure is slowed so that the contact area of the transparent conductive layer and the stepped current blocking structure is increased, the situation that the transparent conductive layer (ITO) on the side wall (at the step) at the edge of the current blocking structure becomes thinner and even breaks can be avoided, the step covering capacity of the transparent conductive layer is improved, the current spreading capacity of the transparent conductive layer is further improved, the electro-optical conversion efficiency of the LED chip is increased, and the brightness of the LED chip is enhanced.

The invention relates to a high-brightness white-light source with an optical waveguide. The high-brightness white-light source is characterized by comprising an excitation light source and an optical waveguide corresponding to the excitation light source, wherein the optical waveguide is provided with an incident port and an emitting port; a white-light excitation body internally provided with fluorescent powder is connected to the emitting port of the optical waveguide; the light emitted by the excitation light source is transmitted through the optical waveguide to excite the fluorescent powder in the white-light excitation body so as to be combined to form the white light. The high-brightness white-light source with the optical waveguide is high in optic-electro conversion efficiency and luminous flux; the fluorescent powder is far from the excitation light source and can be in a deferred degradation without being cooled; the high-brightness white-light source is a compact structure, and is very suitable for the place required for introducing the white light through the optical waveguide.

The invention discloses an intermediate infrared antimonide laser device structure adopting DWELL, namely the intermediate infrared laser structure of DWELL, wherein, a DOT is embedded in a WELL, and the efficiency of the device is improved by increasing the number of the validity period of DWELL in the device. In component of active area is reduced, and quantum dots, well width and covering layers are optimized to reduce epitaxial layer strain to the minimum. As the emission efficiency and optical gain of the quantum dots are stronger than quantum wells; the capture ability, reflectivity and optical limiting ability of DWELL to electrons are stronger than single-layered quantum dots and multi-quantum dot structure, and the DWELL structure has higher emission efficiency. The intermediate infrared laser of the DWELL structure has both characteristics of the traditional quantum well and a quantum dot laser, and the carrier in DWELL has higher composite efficiency, thus the laser structure can work under higher temperature.

The invention discloses a rotating mirror scanning dual waveband semiconductor laser sterilization system for a medical device, which comprises an infrared semiconductor laser, an ultraviolet semiconductor laser, optical fiber collimators, a zooming coupled lens assembly, an infrared beam scanning rotating mirror and an ultraviolet beam scanning rotating mirror. The system can be applied in various modes and occasions and can make important contribution to reduce a fatality rate and a disability rate and restore health as soon as possible in the field of medical treatment and intensive care infection prevention and treatment; the system achieves quick and thorough sterilization and has high efficiency by adopting an intense laser sterilization mode and integrating the advantages of a strong heating effect of an infrared laser and a strong protein molecular ionization damage effect of an ultraviolet laser; and the system is portable and reusable, is not contacted with a human body, has no obvious direct or indirect influence on the human body and is convenient to realize.

The invention relates to an intracavity-frequency-doubling 532nm single-longitudinal-mode laser based on seed light injection. A resonance detection method is used for obtaining 1064nm single-frequency pulse laser for seed injection is obtained and 532nm single-longitudinal-mode pulse laser is obtained through intracavity frequency doubling. A laser resonant cavity is a U-shaped cavity. Two high-peak-power laser diodes (LD) are used for pumping laser crystals from an end surface, a high-precision thermoelectric cooler is used for controlling the temperature of the laser crystals and green light output is obtained through intracavity lithium triborate (LBO) frequency doubling. The intracavity-frequency-doubling 532nm single-longitudinal-mode laser based on seed light injection has the characteristics of high efficiency, high energy, conduction cooling, narrow line width, high frequency stability, compact structure and high working stability.

The invention discloses a thin-film AlGaInP light-emitting diode chip and its preparation method. The light-emitting diode chip comprises a bonding substrate with positive and negative faces. From thefront surface of the bonding substrate upwards, it is sequentially provided with: a substrate side metal bonding layer, an epitaxial side metal bonding layer, a P surface diffusion barrier metal layer and a P surface reflection ohm contact layer; from the P surface reflection ohm contact layer to the top, it is sequentially provided with P-type current spreading layer, the P-type limiting layer,the P-side spatial layer, the multi-quantum well light-emitting region, the N-side spatial layer, the N-type limitation layer, the N-type coarse layer, the N-type ohm contact layer and the N electrode; and the reverse side of the bonding substrate is a P electrode. The P-plane reflecting ohm contact layer adopted by the invention has the functions of light reflection and ohm contact; by optimizingthe spacing distance of the block and the width of the N electrode through the blocking of the P-plane reflection ohm contact layer, the current injection concentration problem of the N-electrode corresponding region can be suppressed, and the N electrode shielding effect can be effectively reduced. The invention has the advantages of effectively improving the photoelectric conversion efficiency,simple structure and the like.

The invention belongs to the technical field of semiconductor optic electronics and particularly discloses a stain-balance active-area gradient potential well layer semiconductor laser structure. The structure comprises a buffer layer, a lower matching layer, a lower limiting layer, a lower transition layer, a lower waveguide layer, a multiple-quantum well layer, an upper waveguide layer, an upper transition layer, an upper limiting layer, an upper matching layer and an electrode contact layer which are in sequential epitaxial growth from top to bottom by adopting a metal-organic chemical vapor deposition method. Improvements are performed on lowering threshold current of a laser, increasing output power, improving photoelectric conversion efficiency, prolonging service life, improving reliability and the like to obtain the semiconductor laser with the novel structural material system on the basis of improving quality of a material mutation heterogeneous interface of the multiple-quantum well layer, lowering mismatching ratio of strain of lattice constant, reducing mismatching ratio of total accumulated strain of an active area of a quantum well and avoiding lattice relaxation occurring to the quantum well heterogeneous interface.

In order to solve the problems of high optical field loss on P-type DBR (distributed Bragg reflector) side and restricted conversion efficiency of the existing vertical cavity surface emitting semiconductor laser, the invention relates to a high-efficiency vertical cavity surface emitting semiconductor laser with asymmetric optical field distribution, which belongs to the technical field of semiconductor laser. The high-efficiency vertical cavity surface emitting semiconductor laser with asymmetric optical field distribution comprises, from bottom to top, an N-side electrode, an N-type substrate, an N-type buffer layer, an N-type segmented DBR, an active region, an oxidation confinement layer, a P-type segmented DBR, a P-type cover layer and a P-side electrode, wherein the refractive index difference of the former 6 to 8 pairs of high- and low-refractive index material of the N-type segmented DBR close to the active region is smaller than that of the latter low-refractive index material pairs; and the refractive index difference of the former 6 to 8 pairs of high- and low-refractive index material of the P-type segmented DBR close to the active region is larger than that of the latter low-refractive index material pairs. The high-efficiency vertical cavity surface emitting semiconductor laser provided by the invention has high photoelectrical conversion efficiency, and wide application prospect.

A method of adjusting a power density in a laser device including a VCSEL array providing an increased power density at a high wall-plug efficiency in that the lateral design parameters are appropriately selected on the basis of a relationship that has been established for a specified vertical design, a corresponding process technology and specified operating conditions. Thus, the total output power, the power density, and the efficiency may be optimized independently from other design criteria and application requirements by tuning only the lateral size of the individual VCSEL elements and the pitch of nearest neighbors of the elements within the array. Hence, for a lateral size of less than 30 μm and a pitch of less than 80 μm, a highly efficient VCSEL array can be provided with a high power density, thereby optimizing manufacturing costs for the output power per chip area.

The invention discloses a surface plasma light-catalyzed reaction device based on photonic crystal fiber. A fiber core of the photonic crystal fiber is provided with a plurality of air vent holes; part of the air vent holes are filled with surface plasma photocatalyst through the method of selectively filling in the air vent holes of the photonic crystal fiber; and the surface plasma light-catalyzed reaction device based on the photonic crystal fiber comprises a solid laser, a nonselective absorbent, a vacuum air chamber and a light-catalyzed reaction product collecting device which are connected sequentially. Compared with the prior art, the surface plasma light-catalyzed reaction device adopts photonic crystal fiber as a light-transmitting medium and a carrier of a catalyst as well as a transport corridor of reactants, combines the advantages of high energy density, high beam quality, high electro-optic conversion efficiency and easiness in fiber coupling of laser, and can improve the contact area and the reaction time of gaseous reactants and the catalyst as well as the utilization ratio of laser energy.

The invention discloses a high-power semiconductor laser light source system for laser processing. The high-power semiconductor laser light source system for laser processing comprises a plurality of semiconductor laser stack arrays and shaping lens groups, wherein the semiconductor laser stack arrays are arranged in a sector shape or a cone shape or a spherical shape as a whole; the shaping lens groups are individually arranged in a manner of respectively corresponding to each semiconductor laser stack array; and optical axes formed by various semiconductor laser stack arrays and corresponding shaping lens groups are converged at the outlet of the high-power semiconductor laser light source system. The high-power semiconductor laser light source system for laser processing, disclosed by the invention, has the advantages of simple principle, small volume, high electro-optic conversion efficiency, high power, high brightness, adjustable power, capability of realizing myriawatt-level output and capability of being directly applied to the field of laser processing.

The invention relates to the field of obstacle clearing instruments, in particular to an intelligent laser obstacle clearing instrument which comprises a laser mainframe box; a power adjusting deviceis mounted on the side wall of the front end of the laser mainframe box, and the intelligent laser obstacle clearing instrument has the advantages that the intelligent laser obstacle clearing instrument adopts an optical fiber laser, the electro-optical conversion efficiency is high, and the power consumption of the whole machine is low; laser output can be dynamically focused, laser power is utilized to the maximum extent, and obstacle removing operation is accurately conducted; an electric intelligent cradle head adopts a precise turbine worm speed reducer, so that the transmission structureis compact and precise; a GPRS remote control device is arranged, authorization permission and authority management can be carried out on the equipment through a mobile phone APP, and the position ofthe equipment can be monitored in real time, so that risk management and control can be effectively carried out on the equipment, and the use safety of the equipment is improved; a remote control keyboard integrating target display, direction control and laser control is adopted for aiming, cradle head direction adjustment, laser power adjustment and light emitting control.

The invention provides a solid laser, which comprises a semi-conductor laser planer array which is used to output pump light and is formed by a plurality of semi-conductor lasers, an optical coupled device which is used to couple the pump light, a resonant chamber which can output laser in parallel which is input in parallel and a laser crystal which is arranged in the resonant chamber. The invention proposes an innovative idea of simultaneously applying a plurality clusters of parallel solid laser, which effectively achieves the output of semi-conductor pump solid laser in high efficiency and big power in some extent in the parallel output mode of a plurality clusters of solid laser. The solid laser can achieve high-efficiency output through utilizing the combination of multipath lower-power laser, compared with a single semi-conductor pump solid laser, the solid laser can excellently achieve thermal dispersion since the beam-splitting output of pump light under the premise of the same output power, can reduce heat load of crystal, effectively solve the problem of thermal effect of laser crystal, and improve electro-optical conversion efficiency and the flexibility of the resonant chamber design.

The invention provides an OLED light-emitting device and a preparation method thereof. The OLED light-emitting device comprises a first electrode; an organic function layer formed on the first electrode; a second electrode formed on the organic function layer; an optical distance adjustment layer formed on the second electrode and used for adjusting the optical length of the OLED light-emitting device; and a semi-reflective semi-permeable layer formed on the optical distance adjustment layer and used for adjusting phase difference of the light emitted out from the optical distance adjustment layer when the light is reflecting. According to the OLED light-emitting device and the preparation method thereof, the adjustment difficulty of the device can be reduced, the production qualified rate is improved, and the cost is reduced. Besides, the thickness of the electro-optical conversion part of the device is far smaller than that of the structure in the prior art, so that drive voltage of the whole device gets smaller, electro-optical conversion efficiency of the device is improved at the meanwhile power consumption is reduced, and the service life of the device is increased. Besides, through the OLED light-emitting device, colour difference is also improved.