14results about How to "Improve electro-optical conversion efficiency" patented technology

The embodiment of the invention provides an extreme ultraviolet light generation method, an extreme ultraviolet light source assembly and an optical system. The extreme ultraviolet light generation method comprises the following steps: generating plasma by using a magnetic confinement device; under the condition that the plasma meets the preset injection condition, the heavy metal injection device is controlled to inject specified heavy metal into the magnetic confinement device, so that the specified heavy metal acts with the plasma in the magnetic confinement device to generate extreme ultraviolet light; the optical device is controlled to collect the extreme ultraviolet light. The magnetic confinement device meeting the extreme ultraviolet light generation requirement is low in cost, simple and stable in operation and high in electro-optical conversion efficiency, so that the extreme ultraviolet light generation method improves the stability of the extreme ultraviolet light and reduces the extreme ultraviolet light generation cost.

The invention relates to the technical field of semiconductor laser manufacturing. The invention particularly relates to a semiconductor laser chip structure and a manufacturing method thereof. The semiconductor laser chip structure provided by the invention comprises a laser substrate and a heavily doped table, and the heavily doped table is arranged on the surface of one side, opposite to a substrate layer, of an upper limiting layer of the laser substrate and comprises a first ohmic contact layer, a second ohmic contact layer and a resistance control layer; the heavily doped table is provided with a current injection region, and is provided with a first current injection window and a second current injection window; a current path from the first current injection window to the substrate layer does not pass through the resistance control layer, and a current path from the second current injection window to the substrate layer passes through the resistance control layer; the second current injection window is at least arranged on one side of the current injection region close to the rear cavity surface. According to the semiconductor laser chip structure provided by the invention, carrier injection of the front cavity surface and the rear cavity surface can be effectively balanced, so that local failure of the front cavity surface is avoided, and the device efficiency can be improved.

The invention discloses a small digital Q-switching circuit, which comprises a set feedback circuit, a primary booster circuit, a voltage doubling circuit, a pulse driving circuit and a high-voltage MOS switching circuit, and is characterized in that the set feedback circuit outputs a signal voltage FB to the primary booster circuit by performing operation processing on a received set voltage value and a high-voltage feedback value; the primary booster circuit is connected with the voltage doubling circuit, a high-voltage direct-current signal is output after voltage doubling and boosting, the high-voltage direct-current signal of the voltage doubling circuit is input into the high-voltage MOS switching circuit, and meanwhile, the voltage doubling circuit transmits a high-voltage feedback value VFB to the set feedback circuit; and after an external TTL control signal is input into the pulse driving circuit, a pulse control signal is output to the high-voltage MOS switching circuit. The high voltage output by the circuit is fast in rising edge and stable in work; higher voltage output can be obtained, and the pulse amplitude adjusting range is large; cost is low, and laser electro-optical conversion efficiency is improved.

This application provides an external cavity laser and a lidar. The external cavity laser includes an active multimode gain chip and a passive optical chip. The active multimode gain chip and the passive optical chip are coupled together. The active multimode gain chip provides a multimode beam, which is then fed back to a single-mode source and output by the passive optical chip. The lidar includes a light source, a beam splitter, a phased array antenna, and a detection module, and includes the aforementioned external cavity laser. This application solves the technical problem of low power output in external cavity lasers in related technologies, thereby improving the power output of external cavity lasers.

This invention discloses a strained quantum well vertical-cavity surface-emitting laser, comprising a top reflector and a bottom reflector, with a top spacer (p-spacer) and a bottom spacer (n-spacer) between the top and bottom reflectors. A first active region and a second active region are disposed between the top and bottom spacers, and a tunneling junction is disposed between the first and second active regions. This invention employs a dual-active-region structure, designing a tunneling junction structure between the two active regions. This allows the injected carriers to undergo two optical gain cycles within the dual-active-region structure, thus multiplying the output optical power and improving the photoelectric conversion efficiency.

The present invention belongs to the field of laser technology, and provides a high repetition rate 193nm laser based on LD pumped alexandrite crystal, which includes an LD pump source, an alexandrite laser oscillator and a nonlinear frequency conversion module; the LD pump source is used to generate laser light and input it into the alexandrite laser oscillator; the alexandrite laser oscillator includes a first dichroic mirror, an alexandrite crystal, a first plano-convex lens, a birefringent filter, a Q-switched device, a first quarter wave plate and an output coupling mirror arranged in sequence along the optical path; the alexandrite laser oscillator is used to generate a fundamental frequency light source; the fundamental frequency light source is sequentially input into the nonlinear frequency conversion module through a first half wave plate and a second plano-convex lens to obtain a 193.4nm laser. The entire system is a fully solid-state structure, and has the characteristics of good pump source stability and high integration, short fundamental frequency light source wavelength, less nonlinear conversion times, high overall electro-optical conversion efficiency and low overall system cost.

The utility model relates to the technical field of optical communication, and provides a multichannel optical module, which comprises a PCB (printed circuit board) and a plurality of laser chips, the PCB is provided with a golden finger area, the multichannel optical module further comprises a ceramic substrate with a plurality of metal conductive channels, and the ceramic substrate covers the laser chips. The metal conductive channels are electrically connected with the laser chips, and signals of the laser chips are output to a golden finger area of the PCB. According to the utility model, through the design of the plurality of conductive paths in the ceramic substrate, power is supplied to the semiconductor laser chips of each path or wavelength, so that the metal routing step under the COB packaging of the multichannel semiconductor laser in a conventional mode is reduced, the risk of gold thread breakage is reduced, and the reliability of the COB packaging of the multichannel semiconductor laser is improved. According to the scheme, the thickness of the metal layer on the light-emitting strip is equivalently increased, and meanwhile, the injected current is uniformly distributed along the light-emitting strip of each semiconductor laser chip, so that the heat dissipation area is increased, and the electro-optical conversion efficiency of the semiconductor laser chips is improved.

According to the light-emitting device, the manufacturing method thereof, the pixel array and the electronic equipment, when an electrode drives a light-emitting layer to generate photons, the photons reach the interface of a nanometer antenna and the light-emitting layer to generate surface plasmons, and the surface plasmons can be conducted along the nanometer antenna and are radiated outwards on the surface of the side, facing a substrate, of the nanometer antenna, so that the surface plasmons are generated. Therefore, photons which are originally difficult to radiate outwards in the light-emitting layer are easier to radiate outwards, the quantity of the photons which radiate outwards is increased, and the light-emitting efficiency of the light-emitting device is improved. Moreover, the carrier barrier layer shields at least part of the joining edge, so that the amount of carriers migrated to the joining edge can be reduced, the carriers provided by the electrode are forced to migrate to the first surface of the nano antenna, the recombination probability of the carriers is increased, the amount of the recombination carriers is further increased, the electro-optical conversion efficiency is improved, and the photoelectric conversion efficiency is improved. The light-emitting efficiency of the light-emitting device can be improved, and the electro-optical conversion efficiency can also be improved.

The present invention discloses a CuO:Te material with strong ultraviolet luminescence, wherein the material is obtained by fully mixing CuO powder and Sb2Te3 powder according to a molar ratio of 10:1.0-2.0, grinding and tableting, and then annealing at 800-950°C for 10-15 minutes in an air environment. The present invention makes the obtained CuO:Te material have the advantages of high luminescence intensity, abundant reserves in nature, low preparation cost, simple process, etc. through Te doping modification. Its ultraviolet luminescence intensity can reach more than 180,000 a.u., which is more than 200 times that of annealed pure CuO, greatly improving the photoelectric and electro-optical conversion efficiency of CuO, and is expected to become a new material in the field of photoelectric performance materials, with the potential for commercial application.

The application relates to a method, device, system and equipment for automatically regulating the running current of a projector light source. The method automatically regulates the running current of the projector light source according to the curve change rate of a brightness change curve to determine whether the projector light source is working in a similar saturation state. The driving current of the projector light source working in the similar saturation state is adjusted, that is, the corresponding driving current is matched according to the actual brightness value of the projector, the driving current of the projector light source working in the similar saturation state is reduced, the projector light source is prevented from working in the similar saturation state, the electro-optical conversion efficiency of the projector light source is kept in a high state, the energy consumption of the projector is reduced, the heat generated by the projector light source is reduced, the service life of the projector is prolonged, and the problem that the projector with multiple light sources in parallel working in the similar saturation state after a fault occurs, the output current cannot be adjusted according to the working light source, and the service life of the projector is reduced is solved.

The embodiment of the utility model provides a semiconductor laser, a laser light source and laser projection equipment, and relates to the technical field of laser projection. The semiconductor laser comprises an N-type substrate, an N-type limiting layer, an N-type waveguide layer, an N-side barrier layer, a quantum well layer, a P-side barrier layer, a P-type waveguide layer and a P-type limiting layer, the N-type limiting layer and the P-type limiting layer form an asymmetric limiting layer structure, and the N-type waveguide layer and the P-type waveguide layer form an asymmetric waveguide layer structure; and the thickness of the N-side barrier layer is different from that of the P-side barrier layer. The embodiment of the utility model is used for improving the performance of the semiconductor laser.

The application belongs to the technical field of light emitting diodes, and relates to a double-interface perovskite light emitting diode and a low-temperature preparation method thereof. The perovskite light emitting diode provided by the application comprises, which are sequentially arranged on an anode, a hole transport layer, a hole interface layer, a light emitting layer, an electron interface layer, an electron transport layer, a cathode modification layer and a cathode. The hole interface layer is prepared by a spin coating method from a diphenyl benzidine (CBP) solution, and the electron interface layer is prepared by a spin coating method from polyethyleneimine (PEI). The application introduces double-wide-bandgap organic interface layers by using a low-concentration solution processing technology, avoids high-temperature annealing treatment required in a traditional method, effectively solves electron / hole injection loss and carrier-exciton quenching problems, and overcomes adverse effects of a high-temperature processing technology on device stability, so that a perovskite light emitting diode device with enhanced stability and high light emitting efficiency is obtained.

The application relates to the technical field of semiconductors, in particular to a vertical cavity surface emitting laser and a preparation method thereof. The laser comprises, from bottom to top, an n-face electrode layer, a substrate layer, a buffer layer, an n-DBR layer, an SiO2 insulating layer located at the outer periphery above the n-DBR layer, an n-lower oxidation limiting structure layer, a lower space layer, a quantum well active region, an upper space layer, a p-upper oxidation limiting structure layer, a p-DBR layer, a contact layer and a p-face electrode layer which are sequentially arranged in the center of the SiO2 insulating layer from bottom to top to form a cylindrical platform. By adopting the symmetrical oxidation limiting structure, more carriers are limited in the oxidation hole, the output power and the electro-optical conversion efficiency can be improved, and the number and distribution of transverse modes can be controlled.

The present invention discloses a Micro-LED structure for improving light extraction efficiency and a manufacturing method thereof, wherein the structure comprises: a driving backplane; a dielectric layer and an electrode connection PAD located on the driving backplane, a plurality of first high-reflectivity anode metals located on the dielectric layer; a second high-reflectivity anode metal located on the electrode connection PAD; the first high-reflectivity anode metal is not in contact with the second high-reflectivity anode metal; an LED tube core located on the second high-reflectivity anode metal; a passivation layer located on both sides of the LED tube core, on both sides of the second high-reflectivity anode metal, and on the dielectric layer; a reflection ring filling substrate located on the first high-reflectivity anode metal; a reflection ring surface coating located on the cathode electrode at the reflection ring filling substrate; a protective dielectric layer and a dielectric microlens located on the dielectric layer, on the cathode electrode, and on the reflection ring surface coating, thereby ultimately achieving improved light extraction efficiency and reduced light crosstalk between pixels.