4results about How to "Improve electro-optical conversion efficiency" patented technology

This application provides an external cavity laser and a lidar. The external cavity laser includes an active multimode gain chip and a passive optical chip. The active multimode gain chip and the passive optical chip are coupled together. The active multimode gain chip provides a multimode beam, which is then fed back to a single-mode source and output by the passive optical chip. The lidar includes a light source, a beam splitter, a phased array antenna, and a detection module, and includes the aforementioned external cavity laser. This application solves the technical problem of low power output in external cavity lasers in related technologies, thereby improving the power output of external cavity lasers.

The application relates to a method, device, system and equipment for automatically regulating the running current of a projector light source. The method automatically regulates the running current of the projector light source according to the curve change rate of a brightness change curve to determine whether the projector light source is working in a similar saturation state. The driving current of the projector light source working in the similar saturation state is adjusted, that is, the corresponding driving current is matched according to the actual brightness value of the projector, the driving current of the projector light source working in the similar saturation state is reduced, the projector light source is prevented from working in the similar saturation state, the electro-optical conversion efficiency of the projector light source is kept in a high state, the energy consumption of the projector is reduced, the heat generated by the projector light source is reduced, the service life of the projector is prolonged, and the problem that the projector with multiple light sources in parallel working in the similar saturation state after a fault occurs, the output current cannot be adjusted according to the working light source, and the service life of the projector is reduced is solved.

The application belongs to the technical field of light emitting diodes, and relates to a double-interface perovskite light emitting diode and a low-temperature preparation method thereof. The perovskite light emitting diode provided by the application comprises, which are sequentially arranged on an anode, a hole transport layer, a hole interface layer, a light emitting layer, an electron interface layer, an electron transport layer, a cathode modification layer and a cathode. The hole interface layer is prepared by a spin coating method from a diphenyl benzidine (CBP) solution, and the electron interface layer is prepared by a spin coating method from polyethyleneimine (PEI). The application introduces double-wide-bandgap organic interface layers by using a low-concentration solution processing technology, avoids high-temperature annealing treatment required in a traditional method, effectively solves electron / hole injection loss and carrier-exciton quenching problems, and overcomes adverse effects of a high-temperature processing technology on device stability, so that a perovskite light emitting diode device with enhanced stability and high light emitting efficiency is obtained.

The application relates to the technical field of semiconductors, in particular to a vertical cavity surface emitting laser and a preparation method thereof. The laser comprises, from bottom to top, an n-face electrode layer, a substrate layer, a buffer layer, an n-DBR layer, an SiO2 insulating layer located at the outer periphery above the n-DBR layer, an n-lower oxidation limiting structure layer, a lower space layer, a quantum well active region, an upper space layer, a p-upper oxidation limiting structure layer, a p-DBR layer, a contact layer and a p-face electrode layer which are sequentially arranged in the center of the SiO2 insulating layer from bottom to top to form a cylindrical platform. By adopting the symmetrical oxidation limiting structure, more carriers are limited in the oxidation hole, the output power and the electro-optical conversion efficiency can be improved, and the number and distribution of transverse modes can be controlled.