17 results about "Antimonide" patented technology

This invention discloses an antimony compound multi-wavelength laser material, its preparation method, and its applications. It relates to the field of semiconductor laser technology and solves the problems of existing antimony compound-based semiconductor laser materials, such as difficulty in achieving multi-wavelength laser emission through single epitaxial growth, and the complex epitaxial processes, limited interlayer interface quality, and insufficient precision in composition control of existing multi-wavelength laser materials. The antimony compound multi-wavelength laser material provided by this invention comprises, from bottom to top, a substrate, a monolayer of graphene, a buffer layer, a lower confinement layer, a lower waveguide layer, a dielectric layer, a quantum well structure, an upper waveguide layer, an upper confinement layer, and a capping layer; wherein the quantum well structure includes In… x3 Ga 1‑x3 As y3 Sb 1‑y3 And Al x4 Ga 1‑ x4 As y4 Sb 1‑y4 Laser materials can be used to fabricate mid-infrared semiconductor lasers, achieving selective epitaxial growth, multi-channel spectral acquisition, and broadband coverage through single-epitaxy and controlled photolithography patterns.

The application discloses a method for improving the ohmic contact performance of an antimonide laser. The application belongs to the technical field of semiconductor lasers and relates to a method for improving the ohmic contact performance of an antimonide laser. The application adopts heavy doping to directly serve as a contact layer or introduce heavy doping as a part of an electrode contact layer in an epitaxial structure of the antimonide laser, so as to reduce the contact resistance. Finally, after the growth of the laser structure is completed, a metal electrode thin film is deposited on the surface of the epitaxial wafer after the surface is treated by removing an oxide layer. The application adopts heavy doping to serve as the contact layer or grows heavy doping on a GaSb contact layer to serve as a carrier tunneling layer, so that the reliability and stability of the ohmic contact performance are improved.

This invention discloses a method for preparing magnesium antimonide quantum dot optical limiting materials and their applications, belonging to the field of novel inorganic semiconductor quantum dot material preparation. The preparation method involves grinding magnesium antimonide powder in an agate mortar, then placing the ground magnesium antimonide powder in an appropriate amount of ionic liquid solvent. The solution is subjected to ice bath ultrasonic exfoliation, followed by a first centrifugation. The supernatant is then dialyzed, followed by a second centrifugation and freeze-drying to obtain magnesium antimonide quantum dot samples. The ionic liquid solvent used in this invention has advantages such as being green, environmentally friendly, having a high boiling point, and high conductivity. The obtained magnesium antimonide quantum dots have a size of 2 nm to 4 nm, exhibiting antisaturated absorption characteristics and high linear transmittance, balancing protective performance with normal optical functions, and showing good application prospects in fields such as nonlinear optics.

This invention discloses an antimony-based focal plane array imaging chip with an electron injection structure, belonging to the field of semiconductor photodetector technology. The chip includes a detector chip, a readout circuit chip, and an indium pillar structure interconnecting the two. The detector chip is fabricated by molecular beam epitaxy (MBE) to grow a specific structure epitaxial wafer, followed by double-mesa etching to form nanopillar units containing the electron injection structure, and then by passivation opening, metal electrodes, and indium pillars. After the readout circuit chip completes the UBM metal layer and indium pillar fabrication, it is flip-chip bonded to the detector chip. The finished product is obtained through substrate thinning, dicing and packaging, and testing. This chip utilizes the nano-lateral confinement effect to shorten carrier transit time and reduce dark current, and combines photonic crystal characteristics to enhance light absorption, solving problems such as crosstalk and slow response in traditional technologies. It achieves an optical gain of 4264 and a response time of <10ns, making it suitable for extremely weak light and ultra-high frame rate short-wave infrared imaging scenarios.

The application relates to the technical field of semiconductor devices, and particularly provides an indium arsenide / aluminum antimonide superlattice strain compensation growth method and a superlattice structure. 1‑ x Sb x The strain compensation layer, the third thickness of the aluminum antimonide barrier layer, the InAs 1‑x Sb x The strain compensation layer, and a period unit is obtained, wherein the antimony component x satisfies 0.1<=x<=0.4, the second thickness is greater than or equal to 0.2 nm and less than or equal to 2 nm, the first thickness, the antimony component x, the second thickness and the third thickness satisfy a balance condition, the balance condition is that the total amount of tensile strain in the period unit is equal to the total amount of compressive strain; a preset number of period units are sequentially grown on the period unit to obtain the indium arsenide / aluminum antimonide superlattice. The problem that it is difficult to guarantee the device performance after the indium arsenide / aluminum antimonide superlattice is subjected to strain compensation in the related art is solved.

A semiconductor photodetector includes a first group III-V semiconductor layer of a first conductivity type; a second group III-V semiconductor layer of a second conductivity type; and an optical absorption layer disposed between the first group III-V semiconductor layer and the second group III-V semiconductor layer in a first direction. The optical absorption layer includes a plurality of unit structures stacked in the first direction. Each of the plurality of unit structures includes a gallium arsenide layer, an indium arsenide layer, and a gallium arsenide antimonide layer. The gallium arsenide layer and the indium arsenide layer each have a thickness smaller than a thickness of the gallium arsenide antimonide layer.

This invention relates to a method for rapidly preparing molybdenum antimonide-based materials using a combination of mechanical alloying, cold pressing, and ultrafast heat treatment. It is a method for rapidly preparing molybdenum antimonide-based materials using a pure solid-state reaction. The aim is to solve the problems of long preparation cycles, high energy consumption, and complex process control associated with existing traditional melt-annealing-hot pressing sintering methods for preparing molybdenum antimonide-based materials. The method includes: 1. Pre-treating the molybdenum antimonide-based raw materials using mechanical alloying, and then cold-pressing the resulting mechanically alloyed powder into a block; 2. Applying an ultrafast heat treatment method based on the Joule heating principle to the cold-pressed block to obtain the final molybdenum antimonide-based material; the molybdenum antimonide-based materials include, but are not limited to, Mo3Sb7 and Mo3Sb. 7‑x M x (M=Te,Se), Mo 3‑x Re x Sb7, Mo 3‑x Ru x Sb7, Mo 2.5 Ru 0.5 Sb 7–x Te x Ni x Mo 3‑y Ni y Sb7、A 0.05 Mo3Sb 5.4 Te 1.6 (A = Mn, Fe, Co, Ni). This invention utilizes a combination of mechanical alloying, cold pressing, and ultrafast heat treatment to simply and rapidly prepare molybdenum antimonide-based materials. This invention is applicable to the large-scale rapid preparation of molybdenum antimonide-based materials in the fields of thermoelectric materials, catalytic materials, nano-ion battery electrodes, and superconductivity.

The application provides a buried heterojunction antimonide laser and a preparation method thereof, and belongs to the technical field of lasers. The problems of a relatively high threshold current, a limited transverse restriction of current and light field, and a single heat dissipation path of a conventional ridge waveguide structure are solved. The laser comprises, from bottom to top, N-face metal, a GaSb substrate, a buffer layer, a lower restriction layer, a lower waveguide layer, a quantum well region, an upper waveguide layer, an upper restriction layer, a cover layer and P-face metal. A ridge is arranged between the P-face metal and the restriction layer, and buried layers are arranged on both sides of the ridge. In the application, the active region is completely wrapped from the side by using a wide-bandgap, low-refractive-index, lattice-matched semiconductor material through secondary epitaxy, the physical properties of the material itself are used to achieve better three-dimensional restriction of current and light field, and thus lower threshold current, higher output power, better mode stability and longer device life are obtained.

An antimonide crystal multi-line cutting method relates to the technical field of semiconductor material preparation, and comprises the following steps: providing an antimonide crystal of which one end is subjected to set crystal orientation, and placing the antimonide crystal in a preset graphite support; transferring to a preset positioning table for positioning; filling the gap and curing; integrally fixing the cured antimonide crystal and the graphite support on a reference table board of a cutting machine; based on a laser displacement sensor preset on a vertical datum plane of the cutting equipment, a sensor cursor is aligned with the end face where crystal orientation is completed; adjusting a reference table surface to enable a sensor cursor to respectively move along the X and Y directions on the end surface which finishes crystal orientation, and respectively adjusting the angles of the rotary table in the X and Y directions to enable the numerical value change of the laser displacement sensor not to be greater than a set threshold value; graphite baffles are adhered to two ends of the graphite support to form a groove body structure with two closed ends; and carrying out multi-wire cutting to obtain the antimonide wafer. According to the invention, the fragment rate of multi-wire cutting and the crystal orientation deviation of the wafer are reduced.

This invention provides a method for fabricating an antimonide distributed feedback laser, comprising the following steps: S1, forming an N-type first InAs buffer layer on a substrate; S2, forming an N-type lower InAsSb confinement layer on the N-type first InAs buffer layer; S3, forming an N-type lower InAlAsSb waveguide layer on the N-type lower InAsSb confinement layer; S4, forming an InGaAs / InAlGaAsSb quantum well layer on the N-type lower InAlAsSb waveguide layer; S5, forming... S6. Forming a P-type InAlAsSb waveguide layer on the P-type InAlAsSb waveguide layer; S7. Forming a P-type second InAs buffer layer on the P-type InAsSb confinement layer; S8. Forming a P-type etch barrier layer on the P-type second InAs buffer layer; S9. Forming a P-type grating layer on the P-type etch barrier layer; S10. Forming a P-type barrier layer on the P-type grating layer; S11. Forming a P-type ohmic contact layer on the P-type barrier layer; wherein steps S1-S11 are performed using the MOCVD method. This invention also provides an antimonide distributed feedback laser fabricated using this method.

A nanopore sensing system includes a cis well, a trans well, and a metal based membrane positioned between the cis and trans wells so that a channel defined in the metal based membrane fluidically connects the cis and trans wells. The metal based membrane has a thickness ranging from about 1 nm to about 3 nm and is selected from the group consisting of a metal oxide, a metal sulfide, a metal nitride, a metal phosphide, a metal arsenide, a metal antimonide, a metal selenide, and a metal telluride.

The invention provides a temperature-pressure dual-mode flexible touch sensor and a preparation method and application thereof. The temperature-pressure bimodal flexible tactile sensor sequentially comprises a flexible substrate, a first electrode layer, a sensitive layer, a second electrode layer and a flexible protection layer, the sensitive layer is a hydroxyethyl cellulose-carbon nanotube-bismuth antimonide gradient structure aerogel composite material, and the first electrode layer and the second electrode layer are arranged in the direction from the flexible substrate to the flexible protection layer. A three-dimensional gradient porous structure with gradient increased pore size distribution is arranged in the sensitive layer. According to the invention, the hydroxyethyl cellulose-carbon nanotube-bismuth antimonide gradient structure aerogel composite material which integrates pressure and temperature independent sensing mechanisms and stable and fine sensing performance is adopted; the flexible touch sensor with a stable and low-detection-lower-limit temperature-pressure dual-mode mutual-interference-free sensing function can be realized, and the flexible touch sensor is wide in raw material source, low in manufacturing cost, simple and feasible in manufacturing process and capable of being widely produced and manufactured.

The application provides a preparation method of a phase change storage material titanium-antimony-tellurium target material, and belongs to the field of microelectronic technology. The application adopts a segmented heat treatment process of high first and low later, ensures that titanium and antimony and titanium and tellurium are synthesized into titanium antimonide and titanium telluride respectively, and titanium antimonide and titanium telluride have better compatibility compared with metal titanium and antimony telluride, long time insulation during synthesis ensures complete reaction, titanium can be uniformly distributed in the grain boundary of antimony telluride after the target material is prepared, and then low-temperature vacuum hot-pressing sintering is adopted to prevent target material grain growth caused by high temperature, and long time pressure keeping is adopted to ensure that the phase is more uniform, the phase change storage material titanium-antimony-tellurium target material with high purity, low oxygen content and relative density greater than or equal to 95% is obtained, the quality index is better, and therefore the thin film deposition efficiency and performance can be improved.

A concrete temperature monitoring system is provided. The monitoring system includes: a temperature sensing module including a plurality of geopolymer thermoelectric sheets embedded in concrete, each geopolymer thermoelectric sheet being configured to detect a temperature difference of the concrete and generate and output a temperature voltage signal based on the temperature difference of the concrete, each geopolymer thermoelectric sheet including a thermoelectric particle made of a functional material and a base material, the functional material including bismuth antimonide or bismuth selenide, and the base material including river sand, a cementitious material, an alkali activator, and bismuth telluride powder; a data collection module configured to receive and forward the temperature voltage signal; and an on-site monitoring and forwarding module configured to determine the temperature difference of the concrete based on the temperature voltage signal and perform on-site monitoring on the temperature difference of the concrete in real time.

A 2μm band antimonide dual-wavelength narrow-linewidth laser is disclosed. This invention relates to the field of semiconductor laser technology, specifically to a 2μm band antimonide dual-wavelength narrow-linewidth laser. The invention employs a thin barrier of 1nm~2nm to separate two different quantum wells, obtaining a tunneling-coupled asymmetric quantum well structure, and then achieves dual-wavelength output through electronic transitions. The laser includes: a laser gain region and a composite DBR grating region; the laser gain region includes: a substrate, a buffer layer, a lower confinement layer, a lower waveguide layer, a tunneling-coupled asymmetric quantum well active region, an upper waveguide layer, an upper confinement layer, and a contact layer; the tunneling-coupled asymmetric quantum well active region includes: a first potential well layer, a barrier layer, and a second potential well layer; the composite DBR grating region includes: a DBR grating with a period of T1 on the ridge waveguide and lateral DBR gratings with a period of T2 on both sides of the ridge waveguide.

The application belongs to the technical field of semiconductor material characterization, and relates to a carrier concentration detection method for antimonide materials, which comprises the following steps: growing a first antimonide compound material layer on a conductive gallium antimonide substrate; performing electrochemical capacitance-voltage testing on the first antimonide compound material layer to obtain a first carrier concentration value; growing a second antimonide compound material layer on a semi-insulating gallium arsenide substrate; performing Hall effect testing on the second antimonide compound material layer to obtain a second carrier concentration value; obtaining a carrier concentration correction factor based on the ratio of the second carrier concentration value to the first carrier concentration value; growing an antimonide compound material layer on the side, away from the substrate, of the first antimonide compound material layer and / or the second antimonide compound material layer; performing electrochemical capacitance-voltage testing on each antimonide compound material layer to obtain a corresponding carrier concentration value; and obtaining the carrier concentration of each antimonide compound material layer based on the carrier concentration value and the carrier concentration correction factor.