4 results about "Antimonide" patented technology

This invention discloses an antimony-based focal plane array imaging chip with an electron injection structure, belonging to the field of semiconductor photodetector technology. The chip includes a detector chip, a readout circuit chip, and an indium pillar structure interconnecting the two. The detector chip is fabricated by molecular beam epitaxy (MBE) to grow a specific structure epitaxial wafer, followed by double-mesa etching to form nanopillar units containing the electron injection structure, and then by passivation opening, metal electrodes, and indium pillars. After the readout circuit chip completes the UBM metal layer and indium pillar fabrication, it is flip-chip bonded to the detector chip. The finished product is obtained through substrate thinning, dicing and packaging, and testing. This chip utilizes the nano-lateral confinement effect to shorten carrier transit time and reduce dark current, and combines photonic crystal characteristics to enhance light absorption, solving problems such as crosstalk and slow response in traditional technologies. It achieves an optical gain of 4264 and a response time of <10ns, making it suitable for extremely weak light and ultra-high frame rate short-wave infrared imaging scenarios.

The application provides a buried heterojunction antimonide laser and a preparation method thereof, and belongs to the technical field of lasers. The problems of a relatively high threshold current, a limited transverse restriction of current and light field, and a single heat dissipation path of a conventional ridge waveguide structure are solved. The laser comprises, from bottom to top, N-face metal, a GaSb substrate, a buffer layer, a lower restriction layer, a lower waveguide layer, a quantum well region, an upper waveguide layer, an upper restriction layer, a cover layer and P-face metal. A ridge is arranged between the P-face metal and the restriction layer, and buried layers are arranged on both sides of the ridge. In the application, the active region is completely wrapped from the side by using a wide-bandgap, low-refractive-index, lattice-matched semiconductor material through secondary epitaxy, the physical properties of the material itself are used to achieve better three-dimensional restriction of current and light field, and thus lower threshold current, higher output power, better mode stability and longer device life are obtained.

This invention provides a method for fabricating an antimonide distributed feedback laser, comprising the following steps: S1, forming an N-type first InAs buffer layer on a substrate; S2, forming an N-type lower InAsSb confinement layer on the N-type first InAs buffer layer; S3, forming an N-type lower InAlAsSb waveguide layer on the N-type lower InAsSb confinement layer; S4, forming an InGaAs / InAlGaAsSb quantum well layer on the N-type lower InAlAsSb waveguide layer; S5, forming... S6. Forming a P-type InAlAsSb waveguide layer on the P-type InAlAsSb waveguide layer; S7. Forming a P-type second InAs buffer layer on the P-type InAsSb confinement layer; S8. Forming a P-type etch barrier layer on the P-type second InAs buffer layer; S9. Forming a P-type grating layer on the P-type etch barrier layer; S10. Forming a P-type barrier layer on the P-type grating layer; S11. Forming a P-type ohmic contact layer on the P-type barrier layer; wherein steps S1-S11 are performed using the MOCVD method. This invention also provides an antimonide distributed feedback laser fabricated using this method.

The application provides a preparation method of a phase change storage material titanium-antimony-tellurium target material, and belongs to the field of microelectronic technology. The application adopts a segmented heat treatment process of high first and low later, ensures that titanium and antimony and titanium and tellurium are synthesized into titanium antimonide and titanium telluride respectively, and titanium antimonide and titanium telluride have better compatibility compared with metal titanium and antimony telluride, long time insulation during synthesis ensures complete reaction, titanium can be uniformly distributed in the grain boundary of antimony telluride after the target material is prepared, and then low-temperature vacuum hot-pressing sintering is adopted to prevent target material grain growth caused by high temperature, and long time pressure keeping is adopted to ensure that the phase is more uniform, the phase change storage material titanium-antimony-tellurium target material with high purity, low oxygen content and relative density greater than or equal to 95% is obtained, the quality index is better, and therefore the thin film deposition efficiency and performance can be improved.