39 results about "Antimonide" patented technology

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

The invention provides a mesa side wall passivation method for a class-II superlattice infrared detector and the infrared detector, and belongs to the field of semiconductor manufacturing. The problems of high interface state density and large dark current caused by a natural oxide layer rich in Sb2O5 formed by exposing the side wall of the aluminum antimonide or arsenic aluminum antimonide barrier layer to the atmosphere are solved; the method comprises the following steps of: cleaning and drying a second-class superlattice infrared detector chip subjected to mesa etching, and then loading the second-class superlattice infrared detector chip into a sample cavity of ALD (Atomic Layer Deposition) equipment; vacuumizing and heating; introducing high-purity hydrogen into a remote plasma source, starting the remote plasma source, selectively reducing the unstable natural oxide layer on the surface of the side wall of the barrier layer of the chip into volatile gas through hydrogen plasma, and pumping away the volatile gas through a vacuum system; after hydrogen plasma treatment is finished, a gas path is switched to an ALD precursor to form a passive film on the side wall of the barrier layer; cooling and taking the sheet; the invention is applied to the infrared detector.

The invention discloses a method for improving ohmic contact performance of an antimonide laser. Relates to the technical field of semiconductor lasers, in particular to a method for improving ohmic contact performance of an antimonide laser. According to the method, heavy doping is adopted and directly serves as a contact layer, or heavy doping is introduced into an antimonide laser epitaxial structure to serve as a part of an electrode contact layer, contact resistance is reduced, and finally, after the laser structure is grown, the surface of an epitaxial wafer is subjected to oxide layer removing treatment, and then a metal electrode film is deposited. According to the invention, heavy doping is adopted as the contact layer, or heavy doping grows on the GaSb contact layer to serve as the carrier tunneling layer, so that the reliability and the stability of ohmic contact performance are improved.

This invention discloses an antimony compound multi-wavelength laser material, its preparation method, and its applications. It relates to the field of semiconductor laser technology and solves the problems of existing antimony compound-based semiconductor laser materials, such as difficulty in achieving multi-wavelength laser emission through single epitaxial growth, and the complex epitaxial processes, limited interlayer interface quality, and insufficient precision in composition control of existing multi-wavelength laser materials. The antimony compound multi-wavelength laser material provided by this invention comprises, from bottom to top, a substrate, a monolayer of graphene, a buffer layer, a lower confinement layer, a lower waveguide layer, a dielectric layer, a quantum well structure, an upper waveguide layer, an upper confinement layer, and a capping layer; wherein the quantum well structure includes In… x3 Ga 1‑x3 As y3 Sb 1‑y3 And Al x4 Ga 1‑ x4 As y4 Sb 1‑y4 Laser materials can be used to fabricate mid-infrared semiconductor lasers, achieving selective epitaxial growth, multi-channel spectral acquisition, and broadband coverage through single-epitaxy and controlled photolithography patterns.

This invention provides an antimonide HEMT structure, an epitaxial structure, and a method for preparing the same. By forming InSb channel layers on both sides of an InAs channel layer, the InSb material, due to its higher lattice constant than InAs and GaSb, exerts tensile stress on the InAs and GaSb layers on either side during growth. This improves the flatness of the interfaces between the InSb and InAs layers, and between the InSb and GaSb layers, and effectively reduces dislocation density, thereby increasing the electron mobility of the quantum well. Simultaneously, inserting a GaSb layer between the InSb and AlSb layers effectively prevents the high-temperature growth of the AlSb layer from affecting the precipitation of In atoms in the InSb and InAs layers. Furthermore, the lattice constant mismatch between the GaSb and AlSb layers is very small, further reducing dislocations and improving the quality of the active layer. Additionally, the InAs composite channel layer structure can form a stepped square quantum well, effectively increasing the concentration of 2DEG.

The application discloses a method for improving the ohmic contact performance of an antimonide laser. The application belongs to the technical field of semiconductor lasers and relates to a method for improving the ohmic contact performance of an antimonide laser. The application adopts heavy doping to directly serve as a contact layer or introduce heavy doping as a part of an electrode contact layer in an epitaxial structure of the antimonide laser, so as to reduce the contact resistance. Finally, after the growth of the laser structure is completed, a metal electrode thin film is deposited on the surface of the epitaxial wafer after the surface is treated by removing an oxide layer. The application adopts heavy doping to serve as the contact layer or grows heavy doping on a GaSb contact layer to serve as a carrier tunneling layer, so that the reliability and stability of the ohmic contact performance are improved.

The invention discloses a quantum dot based on a quaternary antimonide cover layer and a growth method thereof, and the growth method comprises the steps: removing an oxide layer from a substrate, and carrying out the degassing; growing a first GaAs buffer layer on the substrate; growing an AlGaAs buffer layer on the first GaAs buffer layer; growing a second GaAs buffer layer on the AlGaAs buffer layer; growing an InGaAs quantum well on the second GaAs buffer layer; growing an InAs quantum dot on the InGaAs quantum well; and growing an InGaAsSb stress buffer layer on the InAs quantum dots at a fourth set temperature, maintaining the fourth set temperature, growing a GaAs cover layer on the InGaAsSb stress buffer layer, heating the substrate to a first set temperature, and growing a GaAs spacer layer on the GaAs cover layer. The light-emitting wavelength of the quantum dot can be further shifted to the E wave band from the C wave band through the quaternary antimonide.

This invention discloses a method for preparing magnesium antimonide quantum dot optical limiting materials and their applications, belonging to the field of novel inorganic semiconductor quantum dot material preparation. The preparation method involves grinding magnesium antimonide powder in an agate mortar, then placing the ground magnesium antimonide powder in an appropriate amount of ionic liquid solvent. The solution is subjected to ice bath ultrasonic exfoliation, followed by a first centrifugation. The supernatant is then dialyzed, followed by a second centrifugation and freeze-drying to obtain magnesium antimonide quantum dot samples. The ionic liquid solvent used in this invention has advantages such as being green, environmentally friendly, having a high boiling point, and high conductivity. The obtained magnesium antimonide quantum dots have a size of 2 nm to 4 nm, exhibiting antisaturated absorption characteristics and high linear transmittance, balancing protective performance with normal optical functions, and showing good application prospects in fields such as nonlinear optics.

The invention belongs to the technical field of semiconductor material characterization, and relates to an antimonide material carrier concentration detection method. The method comprises the following steps: growing a first antimony-containing compound material layer on a conductive gallium antimonide substrate; performing an electrochemical capacitance-voltage test on the first antimony-containing compound material layer to obtain a first carrier concentration value; growing a second antimony-containing compound material layer on the semi-insulating gallium arsenide substrate; performing a Hall effect test on the second antimony-containing compound material layer to obtain a second carrier concentration value; obtaining a carrier concentration correction factor based on the ratio of the second carrier concentration value to the first carrier concentration value; growing an antimony-containing compound material layer on one side, far away from the substrate, of the first antimony-containing compound material layer and / or the second antimony-containing compound material layer, and performing electrochemical capacitance-voltage test on each antimony-containing compound material layer to obtain a corresponding carrier concentration value; and obtaining the carrier concentration of each antimony-containing compound material layer based on the carrier concentration value and the carrier concentration correction factor.

This invention discloses an antimony-based focal plane array imaging chip with an electron injection structure, belonging to the field of semiconductor photodetector technology. The chip includes a detector chip, a readout circuit chip, and an indium pillar structure interconnecting the two. The detector chip is fabricated by molecular beam epitaxy (MBE) to grow a specific structure epitaxial wafer, followed by double-mesa etching to form nanopillar units containing the electron injection structure, and then by passivation opening, metal electrodes, and indium pillars. After the readout circuit chip completes the UBM metal layer and indium pillar fabrication, it is flip-chip bonded to the detector chip. The finished product is obtained through substrate thinning, dicing and packaging, and testing. This chip utilizes the nano-lateral confinement effect to shorten carrier transit time and reduce dark current, and combines photonic crystal characteristics to enhance light absorption, solving problems such as crosstalk and slow response in traditional technologies. It achieves an optical gain of 4264 and a response time of <10ns, making it suitable for extremely weak light and ultra-high frame rate short-wave infrared imaging scenarios.

A semiconductor light-receiving device includes an indium phosphide substrate, a first III-V compound semiconductor layer of a first conductivity type, a second III-V compound semiconductor layer of a second conductivity type, and an optical absorption layer disposed between the first III-V compound semiconductor layer and the second III-V compound semiconductor layer. The first III-V compound semiconductor layer is disposed between the indium phosphide substrate and the optical absorption layer. The optical absorption layer has a type-II superlattice structure. The superlattice structure includes a gallium indium arsenide layer and a gallium arsenide antimonide layer. The gallium indium arsenide layer has a compression strain. The gallium arsenide antimonide layer has a tensile strain.

The invention provides a semiconductor structure and an image sensor. The semiconductor structure comprises a substrate, a photodiode and a color filter element, the photodiode comprises a first photoelectric function layer, a second photoelectric function layer and a third photoelectric function layer which are sequentially stacked on the surface of a pixel area, and fourth photoelectric function layers formed on the two sides of the first photoelectric function layer. The first photoelectric functional layer is made of silicon arsenide, the second photoelectric functional layer and the fourth photoelectric functional layer are made of silicon phosphide, and the third photoelectric functional layer is made of silicon antimonide; the second photoelectric functional layer is located on the surface of one side of the first photoelectric functional layer away from the substrate; the bottom surface and the side surface, close to one side of the first photoelectric function layer, of the third photoelectric function layer are in contact with the second photoelectric function layer and are surrounded by the second photoelectric function layer. According to the semiconductor structure, a potential energy well and an efficient electron transport channel can be formed in the photodiode, so that more photoelectrons are generated, and the photoelectric conversion efficiency is improved.

The invention relates to an antimonide dual-wavelength narrow-linewidth laser with a waveband of 2 microns. Relates to the technical field of semiconductor lasers, in particular to the technical field of a 2-micron-waveband antimonide dual-wavelength narrow-linewidth laser. According to the invention, two different quantum wells are separated by using a thin potential barrier of 1-2nm to obtain a tunneling coupling asymmetric quantum well structure, and then dual-wavelength output is realized through electron transition. The laser comprises a laser gain area and a composite DBR grating area. The laser gain region comprises a substrate, a buffer layer, a lower limiting layer, a lower waveguide layer, a tunneling coupling asymmetric quantum well active region, an upper waveguide layer, an upper limiting layer and a contact layer; the tunneling coupling asymmetric quantum well active region comprises a first potential well layer, a potential barrier layer and a second potential well layer; the composite DBR grating area comprises a DBR grating with the period T1 on the ridge waveguide and lateral DBR gratings with the periods T2 on the two sides of the ridge waveguide.

The application relates to the technical field of semiconductor devices, and particularly provides an indium arsenide / aluminum antimonide superlattice strain compensation growth method and a superlattice structure. 1‑ x Sb x The strain compensation layer, the third thickness of the aluminum antimonide barrier layer, the InAs 1‑x Sb x The strain compensation layer, and a period unit is obtained, wherein the antimony component x satisfies 0.1<=x<=0.4, the second thickness is greater than or equal to 0.2 nm and less than or equal to 2 nm, the first thickness, the antimony component x, the second thickness and the third thickness satisfy a balance condition, the balance condition is that the total amount of tensile strain in the period unit is equal to the total amount of compressive strain; a preset number of period units are sequentially grown on the period unit to obtain the indium arsenide / aluminum antimonide superlattice. The problem that it is difficult to guarantee the device performance after the indium arsenide / aluminum antimonide superlattice is subjected to strain compensation in the related art is solved.

The invention provides a manufacturing method of an antimonide distributed feedback laser. The manufacturing method comprises the following steps: S1, forming an N-type first InAs buffer layer on a substrate; s2, forming an N-type lower InAsSb limiting layer on the N-type first InAs buffer layer; s3, forming an N type lower InAlAsSb waveguide layer on the N type lower InAsSb limiting layer; s4, an InGaAs / InAlGaAsSb quantum well layer is formed on the N type lower InAlAsSb waveguide layer; s5, a P type upper InAlAsSb waveguide layer is formed on the InGaAs / InAlGaAsSb quantum well layer; s6, forming a P type upper InAsSb limiting layer on the P type upper InAlAsSb waveguide layer; s7, forming a second P-type InAs buffer layer on the upper P-type InAsSb limiting layer; s8, forming a P-type corrosion barrier layer on the P-type second InAs buffer layer; s9, forming a P-type grating layer on the P-type corrosion barrier layer; s10, forming a P-type barrier layer on the P-type grating layer; s11, forming a P-type ohmic contact layer on the P-type barrier layer; wherein the steps from S1 to S11 are executed by adopting an MOCVD (Metal Organic Chemical Vapor Deposition) method. The invention also provides an antimonide distributed feedback laser manufactured by using the manufacturing method.

The application discloses a composite negative electrode material for low-temperature lithium ion batteries, a preparation method and application. The composite negative electrode material is modified by a dual modification method of phosphorus compounding and carbon coating on tin antimonide, and has good electrochemical performance. In addition, the composite negative electrode material still has good cycle stability and safety under extreme conditions, thereby obtaining excellent low-temperature performance.

A semiconductor photodetector includes a first group III-V semiconductor layer of a first conductivity type; a second group III-V semiconductor layer of a second conductivity type; and an optical absorption layer disposed between the first group III-V semiconductor layer and the second group III-V semiconductor layer in a first direction. The optical absorption layer includes a plurality of unit structures stacked in the first direction. Each of the plurality of unit structures includes a gallium arsenide layer, an indium arsenide layer, and a gallium arsenide antimonide layer. The gallium arsenide layer and the indium arsenide layer each have a thickness smaller than a thickness of the gallium arsenide antimonide layer.

An antimonide superlattice infrared detector enhanced light response structure and a preparation method thereof relate to the technical field of infrared focal plane detector preparation, and comprise an infrared focal plane chip, a silicon readout circuit, a metal electrode layer, an indium column, epoxy resin glue and a medium protection film. The infrared focal plane chip, the silicon readout circuit and the indium columns are bonded together through epoxy resin glue to form a focal plane array assembly, the indium columns are evenly arranged between the infrared focal plane chip and the silicon readout circuit at intervals, and metal electrode layers are arranged at the upper ends and the lower ends of the indium columns. A medium protection film is arranged outside the infrared focal plane chip; the photoelectric property of the superlattice material is fully exerted by optimizing the structural design and the preparation process, the superlattice infrared focal plane detector is prepared in a low-cost and high-efficiency manner, the response unevenness of the detector is reduced, and the overall quality of an image is improved.

This invention relates to a method for rapidly preparing molybdenum antimonide-based materials using a combination of mechanical alloying, cold pressing, and ultrafast heat treatment. It is a method for rapidly preparing molybdenum antimonide-based materials using a pure solid-state reaction. The aim is to solve the problems of long preparation cycles, high energy consumption, and complex process control associated with existing traditional melt-annealing-hot pressing sintering methods for preparing molybdenum antimonide-based materials. The method includes: 1. Pre-treating the molybdenum antimonide-based raw materials using mechanical alloying, and then cold-pressing the resulting mechanically alloyed powder into a block; 2. Applying an ultrafast heat treatment method based on the Joule heating principle to the cold-pressed block to obtain the final molybdenum antimonide-based material; the molybdenum antimonide-based materials include, but are not limited to, Mo3Sb7 and Mo3Sb. 7‑x M x (M=Te,Se), Mo 3‑x Re x Sb7, Mo 3‑x Ru x Sb7, Mo 2.5 Ru 0.5 Sb 7–x Te x Ni x Mo 3‑y Ni y Sb7、A 0.05 Mo3Sb 5.4 Te 1.6 (A = Mn, Fe, Co, Ni). This invention utilizes a combination of mechanical alloying, cold pressing, and ultrafast heat treatment to simply and rapidly prepare molybdenum antimonide-based materials. This invention is applicable to the large-scale rapid preparation of molybdenum antimonide-based materials in the fields of thermoelectric materials, catalytic materials, nano-ion battery electrodes, and superconductivity.

The application provides a buried heterojunction antimonide laser and a preparation method thereof, and belongs to the technical field of lasers. The problems of a relatively high threshold current, a limited transverse restriction of current and light field, and a single heat dissipation path of a conventional ridge waveguide structure are solved. The laser comprises, from bottom to top, N-face metal, a GaSb substrate, a buffer layer, a lower restriction layer, a lower waveguide layer, a quantum well region, an upper waveguide layer, an upper restriction layer, a cover layer and P-face metal. A ridge is arranged between the P-face metal and the restriction layer, and buried layers are arranged on both sides of the ridge. In the application, the active region is completely wrapped from the side by using a wide-bandgap, low-refractive-index, lattice-matched semiconductor material through secondary epitaxy, the physical properties of the material itself are used to achieve better three-dimensional restriction of current and light field, and thus lower threshold current, higher output power, better mode stability and longer device life are obtained.

An antimonide crystal multi-line cutting method relates to the technical field of semiconductor material preparation, and comprises the following steps: providing an antimonide crystal of which one end is subjected to set crystal orientation, and placing the antimonide crystal in a preset graphite support; transferring to a preset positioning table for positioning; filling the gap and curing; integrally fixing the cured antimonide crystal and the graphite support on a reference table board of a cutting machine; based on a laser displacement sensor preset on a vertical datum plane of the cutting equipment, a sensor cursor is aligned with the end face where crystal orientation is completed; adjusting a reference table surface to enable a sensor cursor to respectively move along the X and Y directions on the end surface which finishes crystal orientation, and respectively adjusting the angles of the rotary table in the X and Y directions to enable the numerical value change of the laser displacement sensor not to be greater than a set threshold value; graphite baffles are adhered to two ends of the graphite support to form a groove body structure with two closed ends; and carrying out multi-wire cutting to obtain the antimonide wafer. According to the invention, the fragment rate of multi-wire cutting and the crystal orientation deviation of the wafer are reduced.

This invention provides a method for fabricating an antimonide distributed feedback laser, comprising the following steps: S1, forming an N-type first InAs buffer layer on a substrate; S2, forming an N-type lower InAsSb confinement layer on the N-type first InAs buffer layer; S3, forming an N-type lower InAlAsSb waveguide layer on the N-type lower InAsSb confinement layer; S4, forming an InGaAs / InAlGaAsSb quantum well layer on the N-type lower InAlAsSb waveguide layer; S5, forming... S6. Forming a P-type InAlAsSb waveguide layer on the P-type InAlAsSb waveguide layer; S7. Forming a P-type second InAs buffer layer on the P-type InAsSb confinement layer; S8. Forming a P-type etch barrier layer on the P-type second InAs buffer layer; S9. Forming a P-type grating layer on the P-type etch barrier layer; S10. Forming a P-type barrier layer on the P-type grating layer; S11. Forming a P-type ohmic contact layer on the P-type barrier layer; wherein steps S1-S11 are performed using the MOCVD method. This invention also provides an antimonide distributed feedback laser fabricated using this method.

A nanopore sensing system includes a cis well, a trans well, and a metal based membrane positioned between the cis and trans wells so that a channel defined in the metal based membrane fluidically connects the cis and trans wells. The metal based membrane has a thickness ranging from about 1 nm to about 3 nm and is selected from the group consisting of a metal oxide, a metal sulfide, a metal nitride, a metal phosphide, a metal arsenide, a metal antimonide, a metal selenide, and a metal telluride.

The invention provides a temperature-pressure dual-mode flexible touch sensor and a preparation method and application thereof. The temperature-pressure bimodal flexible tactile sensor sequentially comprises a flexible substrate, a first electrode layer, a sensitive layer, a second electrode layer and a flexible protection layer, the sensitive layer is a hydroxyethyl cellulose-carbon nanotube-bismuth antimonide gradient structure aerogel composite material, and the first electrode layer and the second electrode layer are arranged in the direction from the flexible substrate to the flexible protection layer. A three-dimensional gradient porous structure with gradient increased pore size distribution is arranged in the sensitive layer. According to the invention, the hydroxyethyl cellulose-carbon nanotube-bismuth antimonide gradient structure aerogel composite material which integrates pressure and temperature independent sensing mechanisms and stable and fine sensing performance is adopted; the flexible touch sensor with a stable and low-detection-lower-limit temperature-pressure dual-mode mutual-interference-free sensing function can be realized, and the flexible touch sensor is wide in raw material source, low in manufacturing cost, simple and feasible in manufacturing process and capable of being widely produced and manufactured.

The invention provides a resonant tunneling diode which can be applied to the technical field of semiconductors. The resonant tunneling diode comprises a substrate; a buffer layer on the substrate; the first mesa structure is positioned on one side, far away from the substrate, of the buffer layer; the second mesa structure is located on the side, away from the substrate, of the buffer layer, and the material of the substrate comprises gallium arsenide; the second mesa structure is made of indium arsenide and aluminum antimonide; and the first table-board structure and the second table-board structure are arranged at an interval. Through the structure, the peak-valley current ratio of the device is improved, and the depletion region time delay of the device is effectively shortened. The embodiment of the invention also provides a preparation method of the resonant tunneling diode.

The invention provides a method for efficiently adjusting strain of a functional layer of an antimonide laser, and belongs to the technical field of lasers. The problems that an existing functional layer strain adjusting method is multiple in working procedure, long in consumed time, low in efficiency and uneconomical are solved. The method comprises the following steps: step 1, sequentially growing three or more AlGa (In) AsSb materials with different As pressures and different thicknesses on the same test piece to obtain a strain test structure; step 2, taking out the strain test structures of the AlGa (In) AsSb materials with different As pressures and different thicknesses grown in the step 1, measuring high-resolution XRD data of the strain test structures, and then analyzing the XRD data to obtain strain values of the AlGa (In) AsSb materials under different As pressures; 3, the As pressure of the AlGa (In) AsSb material under zero strain is obtained through interpolation; the method is applied to the adjustment of the strain of the antimonide laser functional layer.

The invention provides an antimonide optical pumping thin-film laser and a preparation method thereof, and belongs to the technical field of optical pumping lasers. The problem that the power of the laser cannot be further improved due to the fact that an existing antimonide optical pumping semiconductor laser needs a very thick DBR layer and is limited by an epitaxial growth technology and a thermal management technology of the laser is solved. The laser comprises a first end mirror, a cooling fin and a second end mirror which share a center line, an epitaxial wafer serving as a gain medium is bonded on the cooling fin, pump light is irradiated on the gain medium, and an epitaxial structure of the epitaxial wafer comprises a GaSb substrate, a corrosion barrier layer, a filling layer, a plurality of quantum well regions and a cover layer from bottom to top; according to the antimonide optical pump laser, no DBR layer is arranged, and the substrate-removed chip is directly bonded to the cooling fin, so that more efficient one-dimensional heat dissipation is realized, and the power of the laser can be further improved.

The application discloses a preparation method of SbCo / Co alloy modified carbon nanotube composite material, which comprises the following steps: 1) mixing Co(NO3)2.6H2O, polyethylene glycol, antimony compound, boric acid, urea and deionized water, stirring the mixture until it is clear, drying, grinding, and obtaining a precursor powder; 2) pyrolyzing the precursor powder under an inert gas atmosphere at 800-1000 DEG C for 3-8 h, and obtaining the SbCo / Co alloy modified carbon nanotube composite material. The interaction between Sb and Co elements can effectively improve the physical and chemical properties of single elements, the obtained SbCo / Co nanoparticles can effectively improve the chemical adsorption of polysulfides and effectively catalyze the mutual conversion of polysulfides. In addition, the unique structure of the carbon nanotube can further improve the electron transfer, and it has abundant internal space to load sulfur and buffer volume expansion. After loading S, the SbCo / Co@CNT carbon nanotube functional hybrid material exhibits excellent electrochemical performance, including excellent cycle stability and rate performance.

The invention provides an aluminum antimonide single crystal growth method which comprises the following steps: placing a boron nitride boat filled with aluminum and antimony in a quartz tube, vacuumizing the quartz tube, and sealing the tube; placing the sealed quartz tube in a horizontal synthesis furnace, and controlling aluminum and antimony to react based on preset reaction parameters to synthesize aluminum antimonide polycrystals; performing surface treatment on the aluminum antimonide polycrystal to remove oxide; and placing the surface-treated aluminum antimonide polycrystal in a vertical gradient solidification growth furnace, heating the high-temperature area to a first target temperature, heating the low-temperature area to a second target temperature, keeping the temperature for a first preset time period, and cooling to obtain the aluminum antimonide single crystal. The aluminum antimonide single crystal prepared by the method is high in purity, has no obvious impure phase and macroscopic defects, and is suitable for preparing a high-quality aluminum antimonide substrate material.