75 results about "Antimonide" patented technology

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

The invention provides a gallium-free antimonide semiconductor infrared laser, and belongs to the technical field of semiconductor lasers. A classical InGa (As) Sb-AlGaAsSb I type strained quantum well comprises three III group elements of In, Ga and Al and two V group elements of As and Sb. The valence band order of the structure is small, and the binding capacity to a hole is not high, so that the gain of the laser and the capacity of expanding to long wavelength are limited; comprising a GaSb substrate, and a lower cladding layer, a lower waveguide layer, an active region, an upper waveguide layer, an upper cladding layer and a protective layer which are sequentially epitaxially grown on the GaSb substrate, the lower cladding layer and the upper cladding layer are made of an AlAsy3Sb1-y3 material, y3 is greater than or equal to 0.02 and less than or equal to 0.22, quantum barriers of the lower waveguide layer, the upper waveguide layer and the active region are made of an Inx2Al1-x2Asy2Sb1-y2 material matched with the GaSb substrate, x2 is greater than or equal to 0.4 and less than or equal to 0.6, and y3 is greater than or equal to 0.02 and less than or equal to 0.22. A quantum well of the active region is made of an InAsy1Sb1-y1 material, wherein y1 is more than or equal to 0.50 and less than or equal to 0.85; the invention is applied to the antimonide semiconductor infrared laser.

The invention discloses a light emitting device, a packaging method and an optical module. The light emitting device comprises a metal base, an insulating diversion layer, a pipe cap, a lens, a laser chip, a refrigerator assembly and an adapter assembly. The pipe cap is connected to the metal base in a covering mode to form a sealed cavity, and an insulating flow guide layer, a lens, a laser chip and a refrigerator assembly are arranged in the sealed cavity. The insulating diversion layer is connected between the metal base and the refrigerator assembly; a plurality of bismuth antimonide particles are sequentially connected to the upper surface of the insulating diversion layer; the cold surface substrate is connected to the upper surfaces of the bismuth antimonide particles; the upper surface of the cold face substrate is connected with a heat transfer conductive piece which is connected with the first substrate and the second substrate. The thermistor is arranged on the first substrate; the lens is arranged on the heat-transfer conductive part; the laser chip is arranged on the second substrate; the adapter assembly is connected to the outer side of the pipe cap. The heat dissipation efficiency is effectively improved, and the service life is prolonged.

The invention discloses a light emitting assembly, an optical module and a packaging method of the light emitting assembly. The light emitting assembly comprises an integrated base, a tube cap, a tube shell, a metal block, a coc substrate and an adapter assembly. The integrated base comprises a heat dissipation bottom plate, a cold surface substrate and bismuth antimonide particles; the bismuth antimonide particles are arranged between the cold surface substrate and the heat dissipation bottom plate; the metal block is welded and fixed on the cold surface substrate; the coc substrate is welded and fixed on the metal block, and a laser chip and a backlight monitoring chip are arranged on the coc substrate; pins are embedded in the heat dissipation bottom plate and are respectively connected with the laser chip and the backlight monitoring chip; the pipe cap seals the cold surface substrate, the bismuth antimonide particles, the metal block and the coc substrate; the connecting port of the tube shell is welded and fixed on the edge of the heat dissipation bottom plate; the adapter assembly is welded and fixed to the light outlet of the tube shell. According to the light emitting assembly, the heat conduction difference between different substances caused by bonding of the conventional ceramic hot surface substrate and the metal base is avoided, and the heat conversion efficiency of the light emitting assembly is improved.

The invention discloses an antimonide semiconductor defect in-situ nondestructive testing device and method. The device comprises a light source assembly, a detection assembly and a detection assembly, wherein the light source assembly is used for emitting a scanning light beam and adjusting the emitting position of the scanning light beam; the objective lens focusing assembly is used for receiving, transmitting and focusing the scanning light beam which is normally incident to the sample and is also used for transmitting a reflected light beam of the sample to the scanning light beam; the dichroscope is positioned between the light source assembly and the objective lens focusing assembly, and is used for transmitting the scanning light beam and reflecting the reflected light beam; the imaging assembly is used for receiving the reflected light beam and imaging the sample based on a third harmonic signal in the reflected light beam, the imaging assembly can form a two-dimensional image of the sample along with different emergent positions of the scanning light beam adjusted by the light source assembly, and the focusing depth of the scanning light beam is adjusted in combination with the objective lens focusing assembly. And a three-dimensional image of the sample can be formed. And in-situ nondestructive testing can be carried out on the sample.

The invention discloses an antimonide single-mode photonic crystal microcavity laser and a preparation method thereof, and relates to the technical field of semiconductor lasers, the laser comprises an N-type electrode, an N-type substrate, an N-type buffer layer, an N-type light limiting layer, a quantum well active layer, a P-type light limiting layer, a P-type cover layer, a dielectric layer and a P-type electrode which are sequentially arranged from bottom to top, two bosses are arranged on the upper portion of the P-type electrode, a ridge waveguide is arranged between the two bosses, a groove is formed between the bosses and the ridge waveguide, the depth of the groove is downwards in contact with the interior of the P-type cover layer but not in contact with the P-type light limiting layer, a photonic crystal is arranged on the ridge waveguide, and the photonic crystal is of a periodic air hole arrangement structure in the ridge waveguide direction. According to the invention, the photonic crystal is coupled to the ridge waveguide of the narrow ridge semiconductor laser through an etching method, so that the spectral characteristic and wavelength stability of an antimonide semiconductor are effectively improved.

The invention provides a mesa side wall passivation method for a class-II superlattice infrared detector and the infrared detector, and belongs to the field of semiconductor manufacturing. The problems of high interface state density and large dark current caused by a natural oxide layer rich in Sb2O5 formed by exposing the side wall of the aluminum antimonide or arsenic aluminum antimonide barrier layer to the atmosphere are solved; the method comprises the following steps of: cleaning and drying a second-class superlattice infrared detector chip subjected to mesa etching, and then loading the second-class superlattice infrared detector chip into a sample cavity of ALD (Atomic Layer Deposition) equipment; vacuumizing and heating; introducing high-purity hydrogen into a remote plasma source, starting the remote plasma source, selectively reducing the unstable natural oxide layer on the surface of the side wall of the barrier layer of the chip into volatile gas through hydrogen plasma, and pumping away the volatile gas through a vacuum system; after hydrogen plasma treatment is finished, a gas path is switched to an ALD precursor to form a passive film on the side wall of the barrier layer; cooling and taking the sheet; the invention is applied to the infrared detector.

The invention discloses a method for improving ohmic contact performance of an antimonide laser. Relates to the technical field of semiconductor lasers, in particular to a method for improving ohmic contact performance of an antimonide laser. According to the method, heavy doping is adopted and directly serves as a contact layer, or heavy doping is introduced into an antimonide laser epitaxial structure to serve as a part of an electrode contact layer, contact resistance is reduced, and finally, after the laser structure is grown, the surface of an epitaxial wafer is subjected to oxide layer removing treatment, and then a metal electrode film is deposited. According to the invention, heavy doping is adopted as the contact layer, or heavy doping grows on the GaSb contact layer to serve as the carrier tunneling layer, so that the reliability and the stability of ohmic contact performance are improved.

This invention discloses an antimony compound multi-wavelength laser material, its preparation method, and its applications. It relates to the field of semiconductor laser technology and solves the problems of existing antimony compound-based semiconductor laser materials, such as difficulty in achieving multi-wavelength laser emission through single epitaxial growth, and the complex epitaxial processes, limited interlayer interface quality, and insufficient precision in composition control of existing multi-wavelength laser materials. The antimony compound multi-wavelength laser material provided by this invention comprises, from bottom to top, a substrate, a monolayer of graphene, a buffer layer, a lower confinement layer, a lower waveguide layer, a dielectric layer, a quantum well structure, an upper waveguide layer, an upper confinement layer, and a capping layer; wherein the quantum well structure includes In… x3 Ga 1‑x3 As y3 Sb 1‑y3 And Al x4 Ga 1‑ x4 As y4 Sb 1‑y4 Laser materials can be used to fabricate mid-infrared semiconductor lasers, achieving selective epitaxial growth, multi-channel spectral acquisition, and broadband coverage through single-epitaxy and controlled photolithography patterns.

The present invention relates to the field of semiconductors, and in particular to a method for preparing a TMBS device, comprising the following steps: step 1, using a single crystal silicon material as a substrate material; step 2, forming an indium nitride buffer layer on the upper surface of the substrate base by chemical vapor deposition; step 3, growing a layer of indium germanium antimonide as an epitaxial layer on the surface of the buffer layer by chemical vapor deposition; step 4, opening a groove; step 5, setting a Schottky barrier and a metal layer, and obtaining the desired TMBS device. The epitaxial layer used in the present invention is indium germanium antimonide, which has lower surface defects and better breakdown resistance than indium antimonide, so that the TMBS device has a wide range of application prospects in the fields of power electronics, new energy vehicles, and photovoltaics.

This invention provides an antimonide HEMT structure, an epitaxial structure, and a method for preparing the same. By forming InSb channel layers on both sides of an InAs channel layer, the InSb material, due to its higher lattice constant than InAs and GaSb, exerts tensile stress on the InAs and GaSb layers on either side during growth. This improves the flatness of the interfaces between the InSb and InAs layers, and between the InSb and GaSb layers, and effectively reduces dislocation density, thereby increasing the electron mobility of the quantum well. Simultaneously, inserting a GaSb layer between the InSb and AlSb layers effectively prevents the high-temperature growth of the AlSb layer from affecting the precipitation of In atoms in the InSb and InAs layers. Furthermore, the lattice constant mismatch between the GaSb and AlSb layers is very small, further reducing dislocations and improving the quality of the active layer. Additionally, the InAs composite channel layer structure can form a stepped square quantum well, effectively increasing the concentration of 2DEG.

The application discloses a method for improving the ohmic contact performance of an antimonide laser. The application belongs to the technical field of semiconductor lasers and relates to a method for improving the ohmic contact performance of an antimonide laser. The application adopts heavy doping to directly serve as a contact layer or introduce heavy doping as a part of an electrode contact layer in an epitaxial structure of the antimonide laser, so as to reduce the contact resistance. Finally, after the growth of the laser structure is completed, a metal electrode thin film is deposited on the surface of the epitaxial wafer after the surface is treated by removing an oxide layer. The application adopts heavy doping to serve as the contact layer or grows heavy doping on a GaSb contact layer to serve as a carrier tunneling layer, so that the reliability and stability of the ohmic contact performance are improved.

The present invention discloses a method for preparing high-quality one-dimensional iron antimonide nanowires by molecular beam epitaxy growth technology and its application, belonging to the technical field of semiconductor materials. This method uses strontium titanate single crystal as a substrate, pre-treats the substrate under ultra-high vacuum conditions until regular steps are formed on its surface; subsequently, iron source and antimony source are used as evaporation sources, combined with ultra-high vacuum environment and precise temperature control, and high-quality one-dimensional iron antimonide nanowires are prepared on the pre-treated substrate by molecular beam epitaxy growth technology. The prepared nanowires are uniformly distributed on the surface of the substrate, with a height of 8.03 Å and a width of 2.7 nm. The results of scanning tunneling spectroscopy show that the energy gap of the iron antimonide nanowires increases significantly relative to the iron antimonide thin film, showing the tunability of the semiconductor band gap. The method of the present invention has significant advantages in precisely controlling the preparation of narrow-bandgap semiconductor nanowires with uniform size and nanometer width, providing an excellent material basis for the research and development of new-generation semiconductor devices.

The invention provides a concrete temperature monitoring system, and relates to the field of concrete temperature detection. The monitoring system comprises a temperature sensing module which comprises a plurality of geopolymer thermoelectric sheets embedded in concrete; the geopolymer thermoelectric sheet is used for detecting the temperature difference of the concrete and generating and outputting a temperature voltage signal based on the temperature difference of the concrete; the geopolymer thermoelectric sheet comprises thermoelectric particles, and the thermoelectric particles are made of a type material and a base material. The type material comprises bismuth antimonide or bismuth selenide; the basic materials comprise river sand, a cementing material, an alkali activator and bismuth telluride powder; the data acquisition module is used for receiving and forwarding the temperature and voltage signals; and the on-site monitoring and forwarding module is used for determining the concrete temperature difference based on the temperature and voltage signals and carrying out on-site monitoring on the concrete temperature difference in real time. According to the invention, intelligent monitoring of collection, early warning, management and analysis of the concrete temperature can be realized, the temperature monitoring is accurate and high in reliability, and the detection device is good in ductility.

The invention discloses a quantum dot based on a quaternary antimonide cover layer and a growth method thereof, and the growth method comprises the steps: removing an oxide layer from a substrate, and carrying out the degassing; growing a first GaAs buffer layer on the substrate; growing an AlGaAs buffer layer on the first GaAs buffer layer; growing a second GaAs buffer layer on the AlGaAs buffer layer; growing an InGaAs quantum well on the second GaAs buffer layer; growing an InAs quantum dot on the InGaAs quantum well; and growing an InGaAsSb stress buffer layer on the InAs quantum dots at a fourth set temperature, maintaining the fourth set temperature, growing a GaAs cover layer on the InGaAsSb stress buffer layer, heating the substrate to a first set temperature, and growing a GaAs spacer layer on the GaAs cover layer. The light-emitting wavelength of the quantum dot can be further shifted to the E wave band from the C wave band through the quaternary antimonide.

The invention provides a gallium-free antimonide semiconductor infrared laser, belonging to the technical field of semiconductor lasers; the classic InGa(As)Sb‑AlGaAsSb I-type strained quantum well contains three III-group elements, In, Ga and Al, and two V-group elements, As and Sb. The valence band order of this structure is relatively small, and the ability to bind holes is not strong, which limits the gain of the laser and the ability to expand to long wavelengths; it includes a GaSb substrate, and a lower cladding layer, a lower waveguide layer, an active region, an upper waveguide layer, an upper cladding layer and a protective layer epitaxially grown in sequence on the GaSb substrate, wherein the lower cladding layer and the upper cladding layer are made of AlAs y3 Sb 1‑y3 material, wherein 0.02≤y3≤0.22, the quantum barriers of the lower waveguide layer, the upper waveguide layer and the active region are made of In matched with the GaSb substrate x2 Al 1‑x2 As y2 Sb 1‑y2 material, wherein 0.4≤x2≤0.6, the quantum well of the active region is made of InAs y1 Sb 1‑y1 Material, wherein 0.50≤y1≤0.85; the present invention is applied to antimonide semiconductor infrared lasers.

The invention provides a pure antimonide semiconductor laser, and belongs to the technical field of semiconductor lasers. The problems that a classical InGa (As) Sb-AlGaAsSb I type strained quantum well is not large in valence band order and not high in hole binding capacity are solved. Comprising a substrate, and a lower limiting layer, a lower waveguide layer, a lower quantum barrier layer, a quantum well, an upper quantum barrier layer, an upper waveguide layer, an upper limiting layer and a protective layer which are epitaxially grown on the substrate in sequence, the substrate and the protective layer are made of InxGa1-xSb materials, x is greater than or equal to 0.05 and less than or equal to 0.65, the lower limiting layer and the upper limiting layer are made of Ga1-z1Alz1Sb materials matched with substrate lattices, and the quantum well and the upper quantum barrier layer are made of InxGa1-xSb materials. The lower waveguide layer, the lower quantum barrier layer, the upper quantum barrier layer and the upper waveguide layer are made of an In < 1-x-y > 1 Ga < x > 1 Al < y > 1 Sb material matched with a substrate lattice, the quantum well is made of an In < y > Ga < 1-y > Sb material, and y is larger than or equal to 0.20 and smaller than or equal to 0.60; the method is applied to antimonide semiconductors.

This invention discloses a method for preparing magnesium antimonide quantum dot optical limiting materials and their applications, belonging to the field of novel inorganic semiconductor quantum dot material preparation. The preparation method involves grinding magnesium antimonide powder in an agate mortar, then placing the ground magnesium antimonide powder in an appropriate amount of ionic liquid solvent. The solution is subjected to ice bath ultrasonic exfoliation, followed by a first centrifugation. The supernatant is then dialyzed, followed by a second centrifugation and freeze-drying to obtain magnesium antimonide quantum dot samples. The ionic liquid solvent used in this invention has advantages such as being green, environmentally friendly, having a high boiling point, and high conductivity. The obtained magnesium antimonide quantum dots have a size of 2 nm to 4 nm, exhibiting antisaturated absorption characteristics and high linear transmittance, balancing protective performance with normal optical functions, and showing good application prospects in fields such as nonlinear optics.

A quantum well field effect transistor (QWFET) includes a barrier layer, a quantum well layer, and a spacer layer. The quantum well layer is on the barrier layer. The barrier layer and the spacer layer include undoped aluminum indium antimonide. The quantum well layer includes indium antimonide. The spacer layer is on the quantum well layer. The quantum well layer and the spacer layer are between a source contact and a drain contact. The gate contact is on the dielectric layer, and the dielectric layer is on the spacer layer. By setting the barrier layer and the spacer layer as undoped layers, the performance of the QWFET can be improved.

The invention belongs to the technical field of semiconductor material characterization, and relates to an antimonide material carrier concentration detection method. The method comprises the following steps: growing a first antimony-containing compound material layer on a conductive gallium antimonide substrate; performing an electrochemical capacitance-voltage test on the first antimony-containing compound material layer to obtain a first carrier concentration value; growing a second antimony-containing compound material layer on the semi-insulating gallium arsenide substrate; performing a Hall effect test on the second antimony-containing compound material layer to obtain a second carrier concentration value; obtaining a carrier concentration correction factor based on the ratio of the second carrier concentration value to the first carrier concentration value; growing an antimony-containing compound material layer on one side, far away from the substrate, of the first antimony-containing compound material layer and / or the second antimony-containing compound material layer, and performing electrochemical capacitance-voltage test on each antimony-containing compound material layer to obtain a corresponding carrier concentration value; and obtaining the carrier concentration of each antimony-containing compound material layer based on the carrier concentration value and the carrier concentration correction factor.

The present application discloses a novel long-wave infrared detector, which relates to the semiconductor field. The present application is a novel structure of a pπMp type antimonide type II superlattice infrared detector based on a planar structure, with an InAs / GaSb superlattice structure as a contact layer and an absorption layer, and an InAs / GaSb / AlSb / GaSb superlattice structure as a barrier layer, wherein the contact layer, the absorption layer and the barrier layer are all p-type regions. The present application screens the barrier layer material and optimizes each layer of the device, effectively suppressing the dark current level while ensuring quantum efficiency, thereby ensuring the working performance of the device. The present application contains a T2SL structural system that can be prepared using epitaxial growth tools such as molecular beam epitaxy and metal organic chemical deposition, and the preparation process is simple.

This invention discloses an antimony-based focal plane array imaging chip with an electron injection structure, belonging to the field of semiconductor photodetector technology. The chip includes a detector chip, a readout circuit chip, and an indium pillar structure interconnecting the two. The detector chip is fabricated by molecular beam epitaxy (MBE) to grow a specific structure epitaxial wafer, followed by double-mesa etching to form nanopillar units containing the electron injection structure, and then by passivation opening, metal electrodes, and indium pillars. After the readout circuit chip completes the UBM metal layer and indium pillar fabrication, it is flip-chip bonded to the detector chip. The finished product is obtained through substrate thinning, dicing and packaging, and testing. This chip utilizes the nano-lateral confinement effect to shorten carrier transit time and reduce dark current, and combines photonic crystal characteristics to enhance light absorption, solving problems such as crosstalk and slow response in traditional technologies. It achieves an optical gain of 4264 and a response time of <10ns, making it suitable for extremely weak light and ultra-high frame rate short-wave infrared imaging scenarios.

The application discloses a method for inhibiting antimony volatilization in a waste antimony compound material regeneration smelting process, which is suitable for GaSb, InSb and Ga x In (1‑x) Sb waste materials. Waste antimony compounds with the same material system are loaded into a main smelting area, and high-purity antimony is used as an antimony source and placed in a side antimony source area which is in liquid-phase isolation and gas-phase communication with the main smelting area. After the furnace cavity is vacuumized, inert gas is filled to replace, smelting is carried out in a static atmosphere under near-atmospheric pressure and micro-negative pressure without continuous airflow, antimony vapor generated by the heating of the antimony source enters the upper part of the main smelting area, the actual antimony partial pressure of the melt surface is improved, and the driving force of antimony volatilization is reduced. The method does not need to directly supplement antimony to the melt, the remaining antimony source can be recycled and reused, and is beneficial to reducing antimony source consumption and lowering the regeneration smelting cost.

A semiconductor light-receiving device includes an indium phosphide substrate, a first III-V compound semiconductor layer of a first conductivity type, a second III-V compound semiconductor layer of a second conductivity type, and an optical absorption layer disposed between the first III-V compound semiconductor layer and the second III-V compound semiconductor layer. The first III-V compound semiconductor layer is disposed between the indium phosphide substrate and the optical absorption layer. The optical absorption layer has a type-II superlattice structure. The superlattice structure includes a gallium indium arsenide layer and a gallium arsenide antimonide layer. The gallium indium arsenide layer has a compression strain. The gallium arsenide antimonide layer has a tensile strain.

The invention belongs to the technical field of inorganic two-dimensional materials, and particularly relates to a preparation method of two-dimensional cobaltous antimonide, which comprises the following steps: placing a precursor in a heating area of a tubular furnace, placing a substrate above the precursor, introducing gas, heating to 560-580 DEG C, keeping the temperature, and cooling to obtain the two-dimensional cobaltous antimonide; the precursor is cobalt dichloride powder and antimony powder which are arranged adjacently, and both the cobalt dichloride powder and the antimony powder contain ammonium salt; the preparation method is simple, low in cost and convenient to operate, and the obtained two-dimensional cobalt antimonide is large in size.

The invention provides a semiconductor structure and an image sensor. The semiconductor structure comprises a substrate, a photodiode and a color filter element, the photodiode comprises a first photoelectric function layer, a second photoelectric function layer and a third photoelectric function layer which are sequentially stacked on the surface of a pixel area, and fourth photoelectric function layers formed on the two sides of the first photoelectric function layer. The first photoelectric functional layer is made of silicon arsenide, the second photoelectric functional layer and the fourth photoelectric functional layer are made of silicon phosphide, and the third photoelectric functional layer is made of silicon antimonide; the second photoelectric functional layer is located on the surface of one side of the first photoelectric functional layer away from the substrate; the bottom surface and the side surface, close to one side of the first photoelectric function layer, of the third photoelectric function layer are in contact with the second photoelectric function layer and are surrounded by the second photoelectric function layer. According to the semiconductor structure, a potential energy well and an efficient electron transport channel can be formed in the photodiode, so that more photoelectrons are generated, and the photoelectric conversion efficiency is improved.

The invention relates to an antimonide dual-wavelength narrow-linewidth laser with a waveband of 2 microns. Relates to the technical field of semiconductor lasers, in particular to the technical field of a 2-micron-waveband antimonide dual-wavelength narrow-linewidth laser. According to the invention, two different quantum wells are separated by using a thin potential barrier of 1-2nm to obtain a tunneling coupling asymmetric quantum well structure, and then dual-wavelength output is realized through electron transition. The laser comprises a laser gain area and a composite DBR grating area. The laser gain region comprises a substrate, a buffer layer, a lower limiting layer, a lower waveguide layer, a tunneling coupling asymmetric quantum well active region, an upper waveguide layer, an upper limiting layer and a contact layer; the tunneling coupling asymmetric quantum well active region comprises a first potential well layer, a potential barrier layer and a second potential well layer; the composite DBR grating area comprises a DBR grating with the period T1 on the ridge waveguide and lateral DBR gratings with the periods T2 on the two sides of the ridge waveguide.

The application relates to the technical field of semiconductor devices, and particularly provides an indium arsenide / aluminum antimonide superlattice strain compensation growth method and a superlattice structure. 1‑ x Sb x The strain compensation layer, the third thickness of the aluminum antimonide barrier layer, the InAs 1‑x Sb x The strain compensation layer, and a period unit is obtained, wherein the antimony component x satisfies 0.1<=x<=0.4, the second thickness is greater than or equal to 0.2 nm and less than or equal to 2 nm, the first thickness, the antimony component x, the second thickness and the third thickness satisfy a balance condition, the balance condition is that the total amount of tensile strain in the period unit is equal to the total amount of compressive strain; a preset number of period units are sequentially grown on the period unit to obtain the indium arsenide / aluminum antimonide superlattice. The problem that it is difficult to guarantee the device performance after the indium arsenide / aluminum antimonide superlattice is subjected to strain compensation in the related art is solved.

The invention provides a manufacturing method of an antimonide distributed feedback laser. The manufacturing method comprises the following steps: S1, forming an N-type first InAs buffer layer on a substrate; s2, forming an N-type lower InAsSb limiting layer on the N-type first InAs buffer layer; s3, forming an N type lower InAlAsSb waveguide layer on the N type lower InAsSb limiting layer; s4, an InGaAs / InAlGaAsSb quantum well layer is formed on the N type lower InAlAsSb waveguide layer; s5, a P type upper InAlAsSb waveguide layer is formed on the InGaAs / InAlGaAsSb quantum well layer; s6, forming a P type upper InAsSb limiting layer on the P type upper InAlAsSb waveguide layer; s7, forming a second P-type InAs buffer layer on the upper P-type InAsSb limiting layer; s8, forming a P-type corrosion barrier layer on the P-type second InAs buffer layer; s9, forming a P-type grating layer on the P-type corrosion barrier layer; s10, forming a P-type barrier layer on the P-type grating layer; s11, forming a P-type ohmic contact layer on the P-type barrier layer; wherein the steps from S1 to S11 are executed by adopting an MOCVD (Metal Organic Chemical Vapor Deposition) method. The invention also provides an antimonide distributed feedback laser manufactured by using the manufacturing method.

The invention belongs to the technical field of new materials, and discloses a preparation method of high-purity bismuth antimonide, which comprises the following steps: sealing an antimony elementary substance and a bismuth elementary substance in a vacuumized container, and heating for melting reaction to prepare the high-purity bismuth antimonide, the molar ratio of the antimony elementary substance to the bismuth elementary substance is 1: 1; the heating and melting are carried out in two steps: firstly heating to a first temperature and reacting for a period of time, then heating to a second temperature and reacting for a period of time, and keeping the container in a shaking state at the second temperature stage; the first temperature is higher than the melting point temperature of bismuth and lower than the melting point temperature of antimony; the second temperature is higher than the melting point temperature of antimony. The reaction is carried out through two-stage heating, the reaction temperature is controlled to be below the melting point temperature of antimony, antimony volatilization is avoided, after most of the reaction is completely carried out, heating is carried out, the reaction is thoroughly carried out, the vapor pressure in the vacuum cavity is reduced, antimony loss is avoided, and therefore the product purity can be effectively improved. Meanwhile, the invention further provides the high-purity bismuth antimonide prepared on the basis of the method.