48 results about "Antimonide" patented technology

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

The invention discloses an antimonide semiconductor defect in-situ nondestructive testing device and method. The device comprises a light source assembly, a detection assembly and a detection assembly, wherein the light source assembly is used for emitting a scanning light beam and adjusting the emitting position of the scanning light beam; the objective lens focusing assembly is used for receiving, transmitting and focusing the scanning light beam which is normally incident to the sample and is also used for transmitting a reflected light beam of the sample to the scanning light beam; the dichroscope is positioned between the light source assembly and the objective lens focusing assembly, and is used for transmitting the scanning light beam and reflecting the reflected light beam; the imaging assembly is used for receiving the reflected light beam and imaging the sample based on a third harmonic signal in the reflected light beam, the imaging assembly can form a two-dimensional image of the sample along with different emergent positions of the scanning light beam adjusted by the light source assembly, and the focusing depth of the scanning light beam is adjusted in combination with the objective lens focusing assembly. And a three-dimensional image of the sample can be formed. And in-situ nondestructive testing can be carried out on the sample.

The invention discloses an antimonide single-mode photonic crystal microcavity laser and a preparation method thereof, and relates to the technical field of semiconductor lasers, the laser comprises an N-type electrode, an N-type substrate, an N-type buffer layer, an N-type light limiting layer, a quantum well active layer, a P-type light limiting layer, a P-type cover layer, a dielectric layer and a P-type electrode which are sequentially arranged from bottom to top, two bosses are arranged on the upper portion of the P-type electrode, a ridge waveguide is arranged between the two bosses, a groove is formed between the bosses and the ridge waveguide, the depth of the groove is downwards in contact with the interior of the P-type cover layer but not in contact with the P-type light limiting layer, a photonic crystal is arranged on the ridge waveguide, and the photonic crystal is of a periodic air hole arrangement structure in the ridge waveguide direction. According to the invention, the photonic crystal is coupled to the ridge waveguide of the narrow ridge semiconductor laser through an etching method, so that the spectral characteristic and wavelength stability of an antimonide semiconductor are effectively improved.

The invention provides a mesa side wall passivation method for a class-II superlattice infrared detector and the infrared detector, and belongs to the field of semiconductor manufacturing. The problems of high interface state density and large dark current caused by a natural oxide layer rich in Sb2O5 formed by exposing the side wall of the aluminum antimonide or arsenic aluminum antimonide barrier layer to the atmosphere are solved; the method comprises the following steps of: cleaning and drying a second-class superlattice infrared detector chip subjected to mesa etching, and then loading the second-class superlattice infrared detector chip into a sample cavity of ALD (Atomic Layer Deposition) equipment; vacuumizing and heating; introducing high-purity hydrogen into a remote plasma source, starting the remote plasma source, selectively reducing the unstable natural oxide layer on the surface of the side wall of the barrier layer of the chip into volatile gas through hydrogen plasma, and pumping away the volatile gas through a vacuum system; after hydrogen plasma treatment is finished, a gas path is switched to an ALD precursor to form a passive film on the side wall of the barrier layer; cooling and taking the sheet; the invention is applied to the infrared detector.

The invention discloses a method for improving ohmic contact performance of an antimonide laser. Relates to the technical field of semiconductor lasers, in particular to a method for improving ohmic contact performance of an antimonide laser. According to the method, heavy doping is adopted and directly serves as a contact layer, or heavy doping is introduced into an antimonide laser epitaxial structure to serve as a part of an electrode contact layer, contact resistance is reduced, and finally, after the laser structure is grown, the surface of an epitaxial wafer is subjected to oxide layer removing treatment, and then a metal electrode film is deposited. According to the invention, heavy doping is adopted as the contact layer, or heavy doping grows on the GaSb contact layer to serve as the carrier tunneling layer, so that the reliability and the stability of ohmic contact performance are improved.

This invention discloses an antimony compound multi-wavelength laser material, its preparation method, and its applications. It relates to the field of semiconductor laser technology and solves the problems of existing antimony compound-based semiconductor laser materials, such as difficulty in achieving multi-wavelength laser emission through single epitaxial growth, and the complex epitaxial processes, limited interlayer interface quality, and insufficient precision in composition control of existing multi-wavelength laser materials. The antimony compound multi-wavelength laser material provided by this invention comprises, from bottom to top, a substrate, a monolayer of graphene, a buffer layer, a lower confinement layer, a lower waveguide layer, a dielectric layer, a quantum well structure, an upper waveguide layer, an upper confinement layer, and a capping layer; wherein the quantum well structure includes In… x3 Ga 1‑x3 As y3 Sb 1‑y3 And Al x4 Ga 1‑ x4 As y4 Sb 1‑y4 Laser materials can be used to fabricate mid-infrared semiconductor lasers, achieving selective epitaxial growth, multi-channel spectral acquisition, and broadband coverage through single-epitaxy and controlled photolithography patterns.

This invention provides an antimonide HEMT structure, an epitaxial structure, and a method for preparing the same. By forming InSb channel layers on both sides of an InAs channel layer, the InSb material, due to its higher lattice constant than InAs and GaSb, exerts tensile stress on the InAs and GaSb layers on either side during growth. This improves the flatness of the interfaces between the InSb and InAs layers, and between the InSb and GaSb layers, and effectively reduces dislocation density, thereby increasing the electron mobility of the quantum well. Simultaneously, inserting a GaSb layer between the InSb and AlSb layers effectively prevents the high-temperature growth of the AlSb layer from affecting the precipitation of In atoms in the InSb and InAs layers. Furthermore, the lattice constant mismatch between the GaSb and AlSb layers is very small, further reducing dislocations and improving the quality of the active layer. Additionally, the InAs composite channel layer structure can form a stepped square quantum well, effectively increasing the concentration of 2DEG.

The application discloses a method for improving the ohmic contact performance of an antimonide laser. The application belongs to the technical field of semiconductor lasers and relates to a method for improving the ohmic contact performance of an antimonide laser. The application adopts heavy doping to directly serve as a contact layer or introduce heavy doping as a part of an electrode contact layer in an epitaxial structure of the antimonide laser, so as to reduce the contact resistance. Finally, after the growth of the laser structure is completed, a metal electrode thin film is deposited on the surface of the epitaxial wafer after the surface is treated by removing an oxide layer. The application adopts heavy doping to serve as the contact layer or grows heavy doping on a GaSb contact layer to serve as a carrier tunneling layer, so that the reliability and stability of the ohmic contact performance are improved.

The present invention discloses a method for preparing high-quality one-dimensional iron antimonide nanowires by molecular beam epitaxy growth technology and its application, belonging to the technical field of semiconductor materials. This method uses strontium titanate single crystal as a substrate, pre-treats the substrate under ultra-high vacuum conditions until regular steps are formed on its surface; subsequently, iron source and antimony source are used as evaporation sources, combined with ultra-high vacuum environment and precise temperature control, and high-quality one-dimensional iron antimonide nanowires are prepared on the pre-treated substrate by molecular beam epitaxy growth technology. The prepared nanowires are uniformly distributed on the surface of the substrate, with a height of 8.03 Å and a width of 2.7 nm. The results of scanning tunneling spectroscopy show that the energy gap of the iron antimonide nanowires increases significantly relative to the iron antimonide thin film, showing the tunability of the semiconductor band gap. The method of the present invention has significant advantages in precisely controlling the preparation of narrow-bandgap semiconductor nanowires with uniform size and nanometer width, providing an excellent material basis for the research and development of new-generation semiconductor devices.

The invention discloses a quantum dot based on a quaternary antimonide cover layer and a growth method thereof, and the growth method comprises the steps: removing an oxide layer from a substrate, and carrying out the degassing; growing a first GaAs buffer layer on the substrate; growing an AlGaAs buffer layer on the first GaAs buffer layer; growing a second GaAs buffer layer on the AlGaAs buffer layer; growing an InGaAs quantum well on the second GaAs buffer layer; growing an InAs quantum dot on the InGaAs quantum well; and growing an InGaAsSb stress buffer layer on the InAs quantum dots at a fourth set temperature, maintaining the fourth set temperature, growing a GaAs cover layer on the InGaAsSb stress buffer layer, heating the substrate to a first set temperature, and growing a GaAs spacer layer on the GaAs cover layer. The light-emitting wavelength of the quantum dot can be further shifted to the E wave band from the C wave band through the quaternary antimonide.

This invention discloses a method for preparing magnesium antimonide quantum dot optical limiting materials and their applications, belonging to the field of novel inorganic semiconductor quantum dot material preparation. The preparation method involves grinding magnesium antimonide powder in an agate mortar, then placing the ground magnesium antimonide powder in an appropriate amount of ionic liquid solvent. The solution is subjected to ice bath ultrasonic exfoliation, followed by a first centrifugation. The supernatant is then dialyzed, followed by a second centrifugation and freeze-drying to obtain magnesium antimonide quantum dot samples. The ionic liquid solvent used in this invention has advantages such as being green, environmentally friendly, having a high boiling point, and high conductivity. The obtained magnesium antimonide quantum dots have a size of 2 nm to 4 nm, exhibiting antisaturated absorption characteristics and high linear transmittance, balancing protective performance with normal optical functions, and showing good application prospects in fields such as nonlinear optics.

The invention belongs to the technical field of semiconductor material characterization, and relates to an antimonide material carrier concentration detection method. The method comprises the following steps: growing a first antimony-containing compound material layer on a conductive gallium antimonide substrate; performing an electrochemical capacitance-voltage test on the first antimony-containing compound material layer to obtain a first carrier concentration value; growing a second antimony-containing compound material layer on the semi-insulating gallium arsenide substrate; performing a Hall effect test on the second antimony-containing compound material layer to obtain a second carrier concentration value; obtaining a carrier concentration correction factor based on the ratio of the second carrier concentration value to the first carrier concentration value; growing an antimony-containing compound material layer on one side, far away from the substrate, of the first antimony-containing compound material layer and / or the second antimony-containing compound material layer, and performing electrochemical capacitance-voltage test on each antimony-containing compound material layer to obtain a corresponding carrier concentration value; and obtaining the carrier concentration of each antimony-containing compound material layer based on the carrier concentration value and the carrier concentration correction factor.

This invention discloses an antimony-based focal plane array imaging chip with an electron injection structure, belonging to the field of semiconductor photodetector technology. The chip includes a detector chip, a readout circuit chip, and an indium pillar structure interconnecting the two. The detector chip is fabricated by molecular beam epitaxy (MBE) to grow a specific structure epitaxial wafer, followed by double-mesa etching to form nanopillar units containing the electron injection structure, and then by passivation opening, metal electrodes, and indium pillars. After the readout circuit chip completes the UBM metal layer and indium pillar fabrication, it is flip-chip bonded to the detector chip. The finished product is obtained through substrate thinning, dicing and packaging, and testing. This chip utilizes the nano-lateral confinement effect to shorten carrier transit time and reduce dark current, and combines photonic crystal characteristics to enhance light absorption, solving problems such as crosstalk and slow response in traditional technologies. It achieves an optical gain of 4264 and a response time of <10ns, making it suitable for extremely weak light and ultra-high frame rate short-wave infrared imaging scenarios.

A semiconductor light-receiving device includes an indium phosphide substrate, a first III-V compound semiconductor layer of a first conductivity type, a second III-V compound semiconductor layer of a second conductivity type, and an optical absorption layer disposed between the first III-V compound semiconductor layer and the second III-V compound semiconductor layer. The first III-V compound semiconductor layer is disposed between the indium phosphide substrate and the optical absorption layer. The optical absorption layer has a type-II superlattice structure. The superlattice structure includes a gallium indium arsenide layer and a gallium arsenide antimonide layer. The gallium indium arsenide layer has a compression strain. The gallium arsenide antimonide layer has a tensile strain.

The invention belongs to the technical field of inorganic two-dimensional materials, and particularly relates to a preparation method of two-dimensional cobaltous antimonide, which comprises the following steps: placing a precursor in a heating area of a tubular furnace, placing a substrate above the precursor, introducing gas, heating to 560-580 DEG C, keeping the temperature, and cooling to obtain the two-dimensional cobaltous antimonide; the precursor is cobalt dichloride powder and antimony powder which are arranged adjacently, and both the cobalt dichloride powder and the antimony powder contain ammonium salt; the preparation method is simple, low in cost and convenient to operate, and the obtained two-dimensional cobalt antimonide is large in size.

The invention provides a semiconductor structure and an image sensor. The semiconductor structure comprises a substrate, a photodiode and a color filter element, the photodiode comprises a first photoelectric function layer, a second photoelectric function layer and a third photoelectric function layer which are sequentially stacked on the surface of a pixel area, and fourth photoelectric function layers formed on the two sides of the first photoelectric function layer. The first photoelectric functional layer is made of silicon arsenide, the second photoelectric functional layer and the fourth photoelectric functional layer are made of silicon phosphide, and the third photoelectric functional layer is made of silicon antimonide; the second photoelectric functional layer is located on the surface of one side of the first photoelectric functional layer away from the substrate; the bottom surface and the side surface, close to one side of the first photoelectric function layer, of the third photoelectric function layer are in contact with the second photoelectric function layer and are surrounded by the second photoelectric function layer. According to the semiconductor structure, a potential energy well and an efficient electron transport channel can be formed in the photodiode, so that more photoelectrons are generated, and the photoelectric conversion efficiency is improved.

The invention relates to an antimonide dual-wavelength narrow-linewidth laser with a waveband of 2 microns. Relates to the technical field of semiconductor lasers, in particular to the technical field of a 2-micron-waveband antimonide dual-wavelength narrow-linewidth laser. According to the invention, two different quantum wells are separated by using a thin potential barrier of 1-2nm to obtain a tunneling coupling asymmetric quantum well structure, and then dual-wavelength output is realized through electron transition. The laser comprises a laser gain area and a composite DBR grating area. The laser gain region comprises a substrate, a buffer layer, a lower limiting layer, a lower waveguide layer, a tunneling coupling asymmetric quantum well active region, an upper waveguide layer, an upper limiting layer and a contact layer; the tunneling coupling asymmetric quantum well active region comprises a first potential well layer, a potential barrier layer and a second potential well layer; the composite DBR grating area comprises a DBR grating with the period T1 on the ridge waveguide and lateral DBR gratings with the periods T2 on the two sides of the ridge waveguide.

The application relates to the technical field of semiconductor devices, and particularly provides an indium arsenide / aluminum antimonide superlattice strain compensation growth method and a superlattice structure. 1‑ x Sb x The strain compensation layer, the third thickness of the aluminum antimonide barrier layer, the InAs 1‑x Sb x The strain compensation layer, and a period unit is obtained, wherein the antimony component x satisfies 0.1<=x<=0.4, the second thickness is greater than or equal to 0.2 nm and less than or equal to 2 nm, the first thickness, the antimony component x, the second thickness and the third thickness satisfy a balance condition, the balance condition is that the total amount of tensile strain in the period unit is equal to the total amount of compressive strain; a preset number of period units are sequentially grown on the period unit to obtain the indium arsenide / aluminum antimonide superlattice. The problem that it is difficult to guarantee the device performance after the indium arsenide / aluminum antimonide superlattice is subjected to strain compensation in the related art is solved.

The invention provides a manufacturing method of an antimonide distributed feedback laser. The manufacturing method comprises the following steps: S1, forming an N-type first InAs buffer layer on a substrate; s2, forming an N-type lower InAsSb limiting layer on the N-type first InAs buffer layer; s3, forming an N type lower InAlAsSb waveguide layer on the N type lower InAsSb limiting layer; s4, an InGaAs / InAlGaAsSb quantum well layer is formed on the N type lower InAlAsSb waveguide layer; s5, a P type upper InAlAsSb waveguide layer is formed on the InGaAs / InAlGaAsSb quantum well layer; s6, forming a P type upper InAsSb limiting layer on the P type upper InAlAsSb waveguide layer; s7, forming a second P-type InAs buffer layer on the upper P-type InAsSb limiting layer; s8, forming a P-type corrosion barrier layer on the P-type second InAs buffer layer; s9, forming a P-type grating layer on the P-type corrosion barrier layer; s10, forming a P-type barrier layer on the P-type grating layer; s11, forming a P-type ohmic contact layer on the P-type barrier layer; wherein the steps from S1 to S11 are executed by adopting an MOCVD (Metal Organic Chemical Vapor Deposition) method. The invention also provides an antimonide distributed feedback laser manufactured by using the manufacturing method.

The application discloses a composite negative electrode material for low-temperature lithium ion batteries, a preparation method and application. The composite negative electrode material is modified by a dual modification method of phosphorus compounding and carbon coating on tin antimonide, and has good electrochemical performance. In addition, the composite negative electrode material still has good cycle stability and safety under extreme conditions, thereby obtaining excellent low-temperature performance.

A semiconductor photodetector includes a first group III-V semiconductor layer of a first conductivity type; a second group III-V semiconductor layer of a second conductivity type; and an optical absorption layer disposed between the first group III-V semiconductor layer and the second group III-V semiconductor layer in a first direction. The optical absorption layer includes a plurality of unit structures stacked in the first direction. Each of the plurality of unit structures includes a gallium arsenide layer, an indium arsenide layer, and a gallium arsenide antimonide layer. The gallium arsenide layer and the indium arsenide layer each have a thickness smaller than a thickness of the gallium arsenide antimonide layer.

An antimonide superlattice infrared detector enhanced light response structure and a preparation method thereof relate to the technical field of infrared focal plane detector preparation, and comprise an infrared focal plane chip, a silicon readout circuit, a metal electrode layer, an indium column, epoxy resin glue and a medium protection film. The infrared focal plane chip, the silicon readout circuit and the indium columns are bonded together through epoxy resin glue to form a focal plane array assembly, the indium columns are evenly arranged between the infrared focal plane chip and the silicon readout circuit at intervals, and metal electrode layers are arranged at the upper ends and the lower ends of the indium columns. A medium protection film is arranged outside the infrared focal plane chip; the photoelectric property of the superlattice material is fully exerted by optimizing the structural design and the preparation process, the superlattice infrared focal plane detector is prepared in a low-cost and high-efficiency manner, the response unevenness of the detector is reduced, and the overall quality of an image is improved.

The invention discloses a preparation method of a room-temperature medium-wave infrared retina detector and intelligent sensing calculation application of the room-temperature medium-wave infrared retina detector. The detector comprises a semiconductor epitaxial wafer, and the semiconductor epitaxial wafer is of an nBn laminated barrier type structure and comprises an indium arsenide absorption layer, an arsenic antimony aluminide barrier layer and an indium arsenide contact layer which are sequentially deposited on an indium arsenide substrate; the semiconductor epitaxial wafer is etched into a plurality of photosensitive element arrays through ICP (Inductively Coupled Plasma); the photosensitive element array comprises a deposition passivation protection layer, a metal contact layer, a plurality of top electrodes and bottom electrodes which are parallel to each other, and a plurality of common electrodes. The room-temperature medium-wave infrared retina detector array is prepared by using an indium-arsenic barrier type structure, room-temperature reconfigurable positive and negative linear light response is realized on a short medium-wave infrared band of 2-3.5 microns, and the positive and negative light response rates are both higher than + / -0.1 A / W; and the rear end can be combined with the memristor to realize sensing calculation and classification work.

This invention relates to a method for rapidly preparing molybdenum antimonide-based materials using a combination of mechanical alloying, cold pressing, and ultrafast heat treatment. It is a method for rapidly preparing molybdenum antimonide-based materials using a pure solid-state reaction. The aim is to solve the problems of long preparation cycles, high energy consumption, and complex process control associated with existing traditional melt-annealing-hot pressing sintering methods for preparing molybdenum antimonide-based materials. The method includes: 1. Pre-treating the molybdenum antimonide-based raw materials using mechanical alloying, and then cold-pressing the resulting mechanically alloyed powder into a block; 2. Applying an ultrafast heat treatment method based on the Joule heating principle to the cold-pressed block to obtain the final molybdenum antimonide-based material; the molybdenum antimonide-based materials include, but are not limited to, Mo3Sb7 and Mo3Sb. 7‑x M x (M=Te,Se), Mo 3‑x Re x Sb7, Mo 3‑x Ru x Sb7, Mo 2.5 Ru 0.5 Sb 7–x Te x Ni x Mo 3‑y Ni y Sb7、A 0.05 Mo3Sb 5.4 Te 1.6 (A = Mn, Fe, Co, Ni). This invention utilizes a combination of mechanical alloying, cold pressing, and ultrafast heat treatment to simply and rapidly prepare molybdenum antimonide-based materials. This invention is applicable to the large-scale rapid preparation of molybdenum antimonide-based materials in the fields of thermoelectric materials, catalytic materials, nano-ion battery electrodes, and superconductivity.

The application provides a buried heterojunction antimonide laser and a preparation method thereof, and belongs to the technical field of lasers. The problems of a relatively high threshold current, a limited transverse restriction of current and light field, and a single heat dissipation path of a conventional ridge waveguide structure are solved. The laser comprises, from bottom to top, N-face metal, a GaSb substrate, a buffer layer, a lower restriction layer, a lower waveguide layer, a quantum well region, an upper waveguide layer, an upper restriction layer, a cover layer and P-face metal. A ridge is arranged between the P-face metal and the restriction layer, and buried layers are arranged on both sides of the ridge. In the application, the active region is completely wrapped from the side by using a wide-bandgap, low-refractive-index, lattice-matched semiconductor material through secondary epitaxy, the physical properties of the material itself are used to achieve better three-dimensional restriction of current and light field, and thus lower threshold current, higher output power, better mode stability and longer device life are obtained.

A transparent horizontal gradient freeze (HGF) furnace enables determining a crystallizing growth rate of an ingot by optically monitoring the rate at which a solid / liquid interface traverses across a charge of melted precursor material. The crystallization can be recorded for subsequent analysis, or a machine vision system can monitor and report the solid / liquid traversing rate in near real time, thereby enabling automated regulation of the growth rate to ensure uniform growth. Embodiments implement the disclosed furnace to produce crystalline or polycrystalline indium antimonide mixed with 1.8 wt % nickel antimonide (InSb:NiSb) at a growth rate specified according to required InSb:NiSb properties and a predetermined relationship between the growth rate and the properties of the NiSb needles formed in the ingot. Growth rates can be between 0.02 and 0.08 cm / hr for substantially single crystal ingots, and between 0.5 and 1.5 cm / hr for polycrystalline ingots. The InSb:NiSb can be doped with tellurium.

An antimonide crystal multi-line cutting method relates to the technical field of semiconductor material preparation, and comprises the following steps: providing an antimonide crystal of which one end is subjected to set crystal orientation, and placing the antimonide crystal in a preset graphite support; transferring to a preset positioning table for positioning; filling the gap and curing; integrally fixing the cured antimonide crystal and the graphite support on a reference table board of a cutting machine; based on a laser displacement sensor preset on a vertical datum plane of the cutting equipment, a sensor cursor is aligned with the end face where crystal orientation is completed; adjusting a reference table surface to enable a sensor cursor to respectively move along the X and Y directions on the end surface which finishes crystal orientation, and respectively adjusting the angles of the rotary table in the X and Y directions to enable the numerical value change of the laser displacement sensor not to be greater than a set threshold value; graphite baffles are adhered to two ends of the graphite support to form a groove body structure with two closed ends; and carrying out multi-wire cutting to obtain the antimonide wafer. According to the invention, the fragment rate of multi-wire cutting and the crystal orientation deviation of the wafer are reduced.

This invention provides a method for fabricating an antimonide distributed feedback laser, comprising the following steps: S1, forming an N-type first InAs buffer layer on a substrate; S2, forming an N-type lower InAsSb confinement layer on the N-type first InAs buffer layer; S3, forming an N-type lower InAlAsSb waveguide layer on the N-type lower InAsSb confinement layer; S4, forming an InGaAs / InAlGaAsSb quantum well layer on the N-type lower InAlAsSb waveguide layer; S5, forming... S6. Forming a P-type InAlAsSb waveguide layer on the P-type InAlAsSb waveguide layer; S7. Forming a P-type second InAs buffer layer on the P-type InAsSb confinement layer; S8. Forming a P-type etch barrier layer on the P-type second InAs buffer layer; S9. Forming a P-type grating layer on the P-type etch barrier layer; S10. Forming a P-type barrier layer on the P-type grating layer; S11. Forming a P-type ohmic contact layer on the P-type barrier layer; wherein steps S1-S11 are performed using the MOCVD method. This invention also provides an antimonide distributed feedback laser fabricated using this method.

A nanopore sensing system includes a cis well, a trans well, and a metal based membrane positioned between the cis and trans wells so that a channel defined in the metal based membrane fluidically connects the cis and trans wells. The metal based membrane has a thickness ranging from about 1 nm to about 3 nm and is selected from the group consisting of a metal oxide, a metal sulfide, a metal nitride, a metal phosphide, a metal arsenide, a metal antimonide, a metal selenide, and a metal telluride.