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855 results about "Tensile strain" patented technology

Tensile strain is the relative length of deformation exhibited by a specimen subjected to a tensile force.

High-strength and high-toughness reactive powder concrete of carbon doped nano-tube and preparation method of high-strength and high-toughness reactive powder concrete

The invention provides high-strength and high-toughness reactive powder concrete of a carbon doped nano-tube. The high-strength and high-toughness reactive powder concrete is prepared by taking cement, a carbon nano-tube, silica fume, a water reducing agent, silica sand, coal ash, quartz powder, steel fiber and water as raw materials, wherein all the components in the mixture are calculated in parts by mass: 1000-1200 parts of cement, 250-350 parts of silica fume, 250-350 parts of slag powder, 40-50 parts of water reducing agent, 1200-1400 parts of silica sand, 180-230 parts of water, 190-230 parts of steel fiber, 180-250 parts of coal ash, 80-120 parts of quartz powder, 0.1-5 parts of carbon-nano-tube dispersing agent and 1-10 parts of carbon nano-tube powder. The invention also provides a preparation method of the high-strength and high-toughness reactive powder concrete. The reactive powder concrete obtained by the invention has the high compression strength of 250-300MPa and breaking strength of 45-60MPa, which are higher than the 200-level related performances of the traditional RPC (Reactive Powder Concrete). Meanwhile, the initial cracking strength of the reactive powder concrete material prepared by using the carbon nano-tube is greatly improved and is up to 10MPa in a direct stretching state, and the tensile strain corresponding to peak stress is up to more than 0.5%, so that the toughness and strength of the traditional RPC material are greatly improved.
Owner:浙江固邦新材料有限公司

Forecasting method for creep-fatigue life of material

The invention provides a forecasting method for creep-fatigue life of a material. The method comprises the following steps: respectively performing a creep test, a fatigue test and a creep-fatigue interaction test for the material at a same test temperature; establishing a relation between the failure strain energy density wf and a non-elastic strain energy density dissipation rate of the material under a log-log coordinate according to the creep test; acquiring the fatigue damage df of the material per period according to the fatigue test; acquiring a hysteresis loop under a half-life period according to the creep-fatigue interaction test and establishing a function relation of the change of the stress Sigma (t) of the material under the half-life period within the maximum tensile strain maintaining time along with the change of time t; calculating the creep damage dc under the half-life period by combining with the hysteresis loop and based on the relation between wf and the function as shown in the specification and the relation of change of the fatigue damage df and the stress Sigma (t) along with the change of time t; and utilizing a linear accumulating damage rule to forecast the creep-fatigue life of the material under a creep-fatigue interaction. According to the method provided by the invention, the life of the material under the creep-fatigue interaction can be accurately forecasted.
Owner:EAST CHINA UNIV OF SCI & TECH

Silicon strain engineering accomplished via use of specific shallow trench isolation fill materials

A method of forming a strained silicon layer created via a material mis-match with adjacent trench isolation (TI), regions filled with a dielectric layer comprised with either a higher, or lower thermal expansion coefficient than that of silicon, has been developed. Filling of trenches with a dielectric layer comprised with a higher thermal expansion coefficient than that of silicon results in a tensile strain in planar direction and compressive strain in vertical direction, in an adjacent silicon region. Enhanced electron mobility in channel regions of an N channel MOSFET device, and enhanced hole mobility and transit time in an N type base region of a vertical PNP bipolar device, is realized when these elements are formed in the silicon layer under tensile strain. Filling of trenches with a dielectric layer comprised with a lower thermal expansion coefficient than the thermal expansion coefficient of silicon results in a compressive strain in planar directions and tensile strain in vertical directions, in an adjacent silicon region. Enhanced hole mobility in channel regions of an P channel MOSFET device, and enhanced electron mobility and transit time in a P type base region of a vertical NPN bipolar device, is realized when these elements are formed in the silicon layer under compressive strain.
Owner:TAIWAN SEMICON MFG CO LTD
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