7059results about "Impedence networks" patented technology

An acoustic wave device includes a support, a piezoelectric layer on the support, and an IDT electrode including first and second electrode fingers. When a thickness of the piezoelectric layer is d and a center-to-center distance of the first and second electrode fingers adjacent to each other is p, d / p is less than or equal to about 0.5. When an imaginary line connecting tips of the first electrode fingers is an envelope, a direction in which the envelope extends and the direction of the Y-axis intersect each other, and about 9°≤|α|≤about 14° is satisfied, where |α| is an absolute value of a slant angle α. The slant angle α is an angle of a corner defined by the direction in which the envelope extends and the direction of the Y-axis and is an angle other than 0°.

A packaged acoustic wave component has a device substrate and a metal layer disposed over the device substrate. An acoustic wave device is disposed over at least a portion of the metal layer so that the metal layer is interposed between the device substrate and at least a portion of the acoustic wave device. A cap substrate is spaced above the device substrate, and peripheral wall that is attached to and extends between the device substrate and the cap substrate, the peripheral wall surrounding the acoustic wave device. One or more vias extend through the device substrate and are disposed under the metal layer.

An acoustic wave device includes a piezoelectric layer, an IDT electrode on the piezoelectric layer and including first and second busbars and first and second electrode fingers, and reflectors on the piezoelectric layer and including reflector fingers. The first and second electrode fingers are each respectively connected at one end to the first and second busbars. Imaginary lines respectively connecting distal end portions of the second and first electrode fingers are defined as first and second envelopes. The IDT electrode includes an intersecting region. The piezoelectric layer includes a propagation axis. The first and second electrode fingers include a curved portion in the intersecting region. The reflector electrode fingers include a curved portion. At least one of the first and second envelopes includes a portion extending at an inclination relative to the propagation axis, and includes a bend at which a direction in which the portion extends changes.

The invention discloses a preparation method of a vertical comb-driven MEMS (Micro Electro Mechanical System) micromirror, which comprises the following steps of: forming a through alignment mark and a pre-etched comb structure on a device layer by using a first composite mask, and forming the through alignment mark and the pre-etched comb structure on the back surface of the device layer on a first substrate through a composite mask process, after the first substrate and the second substrate are bonded, the self-alignment composite mask of the comb tooth structure is aligned with the back face pre-etched comb tooth structure through the through alignment mark, high-precision alignment of the comb tooth structure is achieved, accumulated errors are avoided, and the yield of device preparation is improved.

The invention provides a manufacturing method of an MEMS device and the MEMS device, and the manufacturing method comprises the steps: providing a first wafer which is provided with a groove; a protective layer is arranged in the groove; providing a second wafer, and bonding the second wafer and the first wafer to seal the groove to obtain a first cavity; the second wafer is etched to form a comb tooth structure, and the protection layer is used for protecting the comb tooth structure. According to the embodiment of the invention, the protection layer is arranged in the first cavity of the first wafer as a buffer layer, so that when the second wafer is etched to form the comb tooth structure, the plasma backwash in the over-etching stage can be reduced, the comb tooth structure is further protected, the damage to the bottom of the comb tooth caused by the backwash of etching particles is reduced and solved, and the service life of the comb tooth structure is prolonged. Therefore, the mechanical strength and the anti-failure capability of the device are enhanced.

The invention relates to the technical field of defect diagnosis, in particular to a production defect diagnosis method and system for a quartz crystal resonator. The method comprises the following steps: extracting a micro-acoustic response signal of each processing stage based on an ultrasonic excitation and response monitoring device, and carrying out acoustic time-frequency structure analysis and response track trend analysis and extraction to obtain a multi-stage crystal voiceprint behavior track sequence; deploying a multi-angle structured light interferometer array to carry out acoustic monitoring and synchronous visual acquisition, carrying out light stripe form response deviation calculation, and extracting a light stripe form response deviation section; and sound-light behavior frequency response analysis is carried out on the multi-stage crystal voiceprint behavior track sequence and the light texture form response deviation section, acousto-optic mismatch index fitting is carried out, and an acousto-optic fusion feature deviation database is constructed. Through accurate and efficient defect diagnosis and positioning, the production yield of the quartz crystal resonator is improved, and waste and energy consumption of a production line are reduced.

The invention provides a TF-SAW resonator, a preparation method thereof and a filter, and relates to the technical field of semiconductors. The interdigital electrode comprises piston structures, sub-bus bars and metal bumps, the piston structures are positioned at two ends of the acoustic part, it can be understood that the piston structures are arranged at the tail end areas of the acoustic part on the electrode finger strips, and larger sound velocity difference is realized by changing the sound velocity of the tail end areas; therefore, the transverse mode is reflected in different directions to avoid energy dissipation caused by resonance; on a propagation path of a transverse mode, the sub bus bars and the metal bumps are sequentially arranged, clutter interference is eliminated by causing sound velocity difference, so that clutter mode interference is inhibited to the greatest extent, the Q value is improved, the insertion loss flatness in a passband is improved, and the performance of the TF-SAW resonator is further improved.

An acoustic wave device includes an IDT electrode and reflector electrodes on or above a piezoelectric substrate. A region in which first and second electrode fingers of the IDT electrode overlap each other in an acoustic wave propagation direction defines an intersection region. The intersection region includes a center region and first and second edge regions on both sides of the center region. Dielectric films extend from the first and second edge regions to outer side regions in the acoustic wave propagation direction of the reflector electrodes via the reflector electrodes.

An acoustic wave device includes a support including a support substrate with a thickness in a first direction, a piezoelectric layer on the support in the first direction, and resonators each including a functional electrode on the piezoelectric layer in the first direction. The support includes first and second space portions at positions where the respective resonators at least partially overlap in plan view in the first direction, the second space portion with an area larger than an area of the first space portion in plan view in the first direction. The piezoelectric layer includes first and second through-holes respectively communicating with the first and second space portions, and the first through-hole has an area larger than an area of the second through-hole in plan view in the first direction.

A film bulk acoustic wave resonator comprising a piezoelectric film having a central region defining a main active domain in which a main acoustic wave is generated during operation, an upper electrode disposed on a top surface of the piezoelectric film, a lower electrode disposed on a lower surface of the piezoelectric film, a dielectric material layer disposed on a lower surface of the lower electrode, and lower recessed frame regions disposed laterally on opposite sides of the central region, the lower recessed frame regions defined by regions of one of the dielectric material or of the lower electrode having a lesser thickness than the thickness of the one of the dielectric material layer or of the lower electrode in the central region.

The invention provides a preparation method of an inertial sensor and the sensor. The preparation method comprises the following steps: sequentially forming a first cavity and a first oxide layer on a first silicon wafer; bonding the first silicon wafer and a second silicon wafer, wherein the second silicon wafer is a low-resistance silicon wafer; forming an inertia sensitive structure in the second silicon wafer; correspondingly forming a second cavity on a third silicon wafer, wherein the third silicon wafer is a low-resistance silicon wafer; bonding the third silicon wafer and the second silicon wafer; an isolation groove penetrating through the third silicon wafer is formed through etching, a conductive silicon column and an electric signal isolation ring are formed, and the conductive silicon column is connected with the inertia sensitive structure; and forming a sealing insulating layer on the surface of the third silicon wafer, and forming a signal lead-out pin in the sealing insulating layer. According to the scheme, thermal stress caused by thermal expansion coefficient mismatch among the three layers of wafers is reduced through an all-silicon wafer level packaging process, and the full-temperature characteristic of the device is greatly enhanced; and the preparation process flow is optimized, the process control difficulty is reduced, and the preparation cost is reduced.

An acoustic wave device is disclosed. The acoustic wave device can include a multilayer piezoelectric substrate and an interdigital transducer electrode over the multilayer piezoelectric substrate. The interdigital transducer electrode includes a first layer and a second layer over the first layer. The interdigital transducer electrode has a tilt angle of at least 12 degrees. The acoustic wave device being configured to generate a surface acoustic wave having a wavelength L.

The embodiment of the invention provides a microresonator and a preparation method of the microresonator, the microresonator can be obtained by connecting an MIM plate capacitor and an inductor of a planar coil structure, and an upper electrode, a lower electrode and the inductor of the MIM plate capacitor and a microstrip line connecting the capacitor and the inductor are all prepared from superconducting materials. A dielectric layer of the MIM plate capacitor can be prepared by adopting an ALD technology, a dielectric film grown by adopting the ALD technology is very compact and has very good thickness uniformity, a relatively high dielectric constant can be realized, and the quality factor of the microresonator can be remarkably improved by combining the zero resistance characteristic of a superconducting material; and the miniaturization of the microresonator can be realized. Moreover, in the preparation process, the three layers of thin films for forming the capacitor and the inductor are formed through deposition firstly, and then the three layers of thin films are patterned layer by layer, so that introduction of excessive impurities can be avoided, interlayer contact can be optimized, and the risk of electric leakage can be reduced.

The invention provides a pressure sensor based on silicon-silicon bonding and a preparation method thereof. The preparation method comprises the following steps: providing a low-resistance silicon wafer, forming a silicon deep hole in a first surface of the low-resistance silicon wafer, and depositing an isolation material in the silicon deep hole to form an isolation ring; etching the first surface to form a shallow groove and a conductive silicon column to obtain a low-resistance cap wafer; providing an SOI wafer, performing ion implantation on the first surface of the SOI wafer to form a resistance region, and obtaining a substrate wafer; bonding the low-resistance cap wafer with the substrate wafer; grinding the second surface of the low-resistance cap wafer until the isolating ring is exposed; depositing an insulating layer on the second surface of the low-resistance cap wafer, and forming a metal electrode on the insulating layer; and forming a back cavity structure on the second surface of the substrate wafer, exposing the top silicon of the SOI wafer, and forming a sensitive film layer. The conductive silicon column is made of low-resistance silicon, copper ion pollution is avoided, the preparation process is simple, and the period is controllable; the device obtained based on the silicon-silicon bonding process has high bonding strength and high air tightness.

A method of forming an acoustic wave device is disclosed. The method can include providing a structure having a support substrate that includes a first substrate portion, a second substrate portion, and a third substrate portion between the first portion and the second portion, a piezoelectric layer that includes a first portion over the first substrate portion and a second portion over the second substrate portion, a first interdigital transducer electrode on the first portion of the piezoelectric layer, and a second interdigital transducer electrode on the second portion of the piezoelectric layer. the method can also include etching at least a portion of the piezoelectric layer such that a region over the third substrate portion is free from the piezoelectric layer.

An acoustic wave device includes a support, a piezoelectric layer, an IDT electrode including first and second busbars and first and second electrode fingers, and a first insulating film on the piezoelectric layer and that covers tip end portions of the second electrode fingers. In a multilayer body including the support and the piezoelectric layer, a cavity is provided on a side of the support with respect to the piezoelectric layer. In plan view, an outer peripheral edge of the cavity includes first and second outer peripheral edge portions facing each other in an electrode-finger extending direction. The first outer peripheral edge portion is on a side of the first busbar, and the first insulating film extends on the side of the first busbar, and, in plan view, overlaps the first outer peripheral edge portion of the cavity.

Aspects relate to a compact and low-cost gas analyzer that can be used for different types of gas analysis, such as air quality analysis. The gas analyzer can include a light source, a gas cell configured to receive a sample (e.g., a gas under test), a spectral sensor including a spectrometer and a detector, and an artificial intelligence (AI) engine. Light can enter the gas cell and interact with the sample to produce output light that may be measured by the spectral sensor. The resulting spectrum produced by the spectral sensor may be analyzed by the AI engine to produce a result. The gas analyzer further includes a self-calibration component configured to enable calibration of the sample spectrum to compensate for spectral drift of the spectral sensor.

The invention relates to the technical field of piezoelectric single-crystal filters, in particular to a filter based on a heterogeneous integrated piezoelectric single-crystal thin film and a preparation method, the filter comprises a Si substrate, a dry film, the piezoelectric single-crystal thin film, a SiO2 layer and a Si wafer are sequentially arranged on the Si substrate, metal balls are arranged on the Si wafer, the metal balls are connected with electrodes, and the electrodes are connected with the piezoelectric single-crystal thin film. And the electrode passes through the Si wafer and the SiO2 layer and is connected with the piezoelectric single crystal film. When the filter is prepared, bonding packaging can be performed after a cavity area is etched on a dry film, a resonance area is directly defined through a photoetching process, the influence of etching on the strength of the piezoelectric single crystal film is avoided, a silicon wafer bonding technology can be combined, double-sided packaging can be realized, and batch production is supported; in the process, only the electrode patterning step needs to be adjusted according to the type of the filter, and then the existing MEMS process integration is utilized, so that the preparation of the FBAR and the XBAR on the same production line is realized, the process compatibility is good, and the problems that the existing preparation method is poor in compatibility and is difficult to realize large-scale production are solved.

Aspects of this disclosure relate to a bulk acoustic wave resonator and an integrated capacitor. In certain embodiments, the integrated capacitor can be a metal-insulator-metal capacitor in parallel with the bulk acoustic wave resonator. The metal-insulator-metal capacitor can include a portion of a first electrode and a portion of a second electrode of the bulk acoustic wave resonator. At least part of the metal-insulator-metal capacitor is positioned laterally relative to an acoustic reflector of the bulk acoustic wave resonator. Other embodiments of capacitors integrated with a bulk acoustic wave resonator are disclosed. Related filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.

A surface acoustic wave resonator comprises a multi-layer piezoelectric substrate including a carrier substrate, a layer of a first dielectric material disposed on the carrier substrate, and a layer of piezoelectric material disposed on the layer of the first dielectric material, interdigital transducer electrodes disposed on the layer of piezoelectric material and including interleaved electrode fingers, and a layer of a second dielectric material disposed on a central interleaved region of the interleaved electrode fingers, gap regions of the interdigital transducer electrodes being either free of the layer of the second dielectric material or having a thinner layer of the second dielectric material than the central interleaved region to reduce spurious signals in an admittance curve of the surface acoustic wave resonator.

Aspects of this disclosure relate to acoustic wave filters with bulk acoustic wave resonators. An acoustic wave filter can include a first bulk acoustic wave resonator configured to excite an overtone mode as a main mode and a second bulk acoustic wave resonator having a fundamental mode as a main mode.

A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate, a piezoelectric layer over the support substrate, a temperature compensation structure between the support substrate and the piezoelectric layer, an interdigital transducer electrode in electrical communication with the piezoelectric layer. The temperature compensation structure includes a material having a lower acoustic velocity and higher permittivity than silicon oxide.

An acoustic wave device, a radio frequency filter and an electronics module are provided. The acoustic wave device, comprises a layer of piezoelectric material, a pair of interdigital transducer electrodes disposed on an upper surface of the layer of piezoelectric material, each interdigital transducer electrode including a bus bar and a plurality of electrode fingers extending from the bus bar through a central region of the interdigital transducer electrode towards an edge region of the interdigital transducer electrode, each of the plurality of electrode fingers having a width in a direction perpendicular to the extension of the electrode fingers that is smaller in the edge regions than in the central regions, and trench portions located in the upper surface of the layer of piezoelectric material, the trench portions overlapping with the edge regions of the interdigital transducer electrodes. The acoustic wave device provides effective suppression of transverse modes.

A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate, a piezoelectric layer over the support substrate, a temperature compensation structure between the support substrate and the piezoelectric layer, and an interdigital transducer electrode in electrical communication with the piezoelectric layer. The temperature compensation structure includes a germanium oxide layer.

The invention discloses a crystal resonator sputter coating device and a preparation method of a crystal resonator, and belongs to the field of electronic components, the crystal resonator sputter coating device comprises a bottom plate, a lower electrode mask plate, a positioning plate, an upper electrode mask plate and a magnetic cover plate in sequence, the positioning plate is provided with a wafer positioning groove, a wafer is installed in the wafer positioning groove, and the magnetic cover plate is provided with a magnet. The upper electrode mask plate and the lower electrode mask plate are both provided with electrode holes, the thickness of the positioning plate is recorded as h < definite >, and one surface of at least one of the upper electrode mask plate and the lower electrode mask plate, which faces a wafer, is provided with a diffusion prevention bulge for preventing diffusion of electrode particles during film coating, and the thickness of the diffusion prevention bulge is recorded as h < definite >. The size of the dispersion preventing protrusion is matched with the size of the wafer positioning groove, the dispersion preventing protrusion is located in the wafer positioning groove during assembly, the thickness of the wafer is recorded as h wafer, and h wafer lt is smaller than or equal to 0.017 mm; and h, setting. The sputtering coating device solves the problem of electrode diffusion of the high-frequency crystal resonator in the existing sputtering coating device for the crystal resonator due to too small wafer thickness.

The invention provides a TF-SAW resonator, a preparation method thereof and a filter, and relates to the technical field of semiconductors. The interdigital electrode comprises piston structures, sub-bus bars, metal bumps and recesses, the piston structures are positioned at two ends of the acoustic part, it can be understood that the piston structures are arranged at the tail end areas of the acoustic part on the electrode finger bars, and larger sound velocity difference is realized by changing the sound velocity of the tail end areas; therefore, the transverse mode is reflected in different directions to avoid energy dissipation caused by resonance; according to the TF-SAW resonator, the sub bus bars, the metal bumps and the recesses are arranged on a propagation path of a transverse mode, clutter interference is eliminated by causing sound velocity difference, so that clutter mode interference is inhibited to the greatest extent, the Q value is improved, the insertion loss flatness in a passband is improved, the performance of standing waves in the passband is improved, the insertion loss is improved and the like, and the performance of the TF-SAW resonator is further improved.

The invention discloses a PT symmetrical hot-pressing resistance MEMS wind speed and wind direction sensor. The sensor comprises four groups of PT symmetrical MEMS resonators which are orthogonally distributed and have hot-pressing resistance feedback; the PT symmetrical MEMS resonator comprises two cantilever beam resonators with completely same structures, a coupling spring beam connected with the two resonators, and a constant current source connected with one resonator, each cantilever resonator comprises two anchor areas, a wide beam connected with the anchor areas, a narrow beam with a piezoresistive effect, a warped thin plate structure and external electrodes located on the two sides of the thin plate structure. Wind speed and wind direction signals are converted into rigidity change of the resonator array through mechanical action by means of a warped thin plate structure, and the rigidity change enables the PT symmetrical MEMS system to deviate from an EP point, so that system frequency splitting is caused. As the frequency splitting quantity of the PT symmetric system is in direct proportion to the square root of the disturbance quantity, the wind speed and direction sensor can detect tiny wind speed signals, and has the advantages of very high sensitivity, simple process, high integration level and the like.

An acoustic wave device includes a support substrate, first and second piezoelectric layers, and an IDT electrode. The first and second piezoelectric layers are on the support substrate. The IDT electrode is on the first piezoelectric layer and includes electrode fingers. The second piezoelectric layer is between the first piezoelectric layer and the support substrate. The first and second piezoelectric layers are made of lithium tantalate or lithium niobate. Euler angles of the second piezoelectric layer are different from Euler angles of the first piezoelectric layer.

An acoustic wave device includes a piezoelectric film and an IDT electrode on the piezoelectric film. The IDT electrode includes first and second busbars, at least one first electrode finger, and at least one second electrode finger. When an overlap region is defined as a region in which the first and second electrode fingers overlap each other in an acoustic wave propagation direction, points A2, B2, C2, and D2, defined as follows, are all outside the cavity when, at the points A2, B2, C2, and D2, xa>about 25 μm, ya>about 25 μm, xb>about 25 μm, yb>about 25 μm, xc>about 25 μm, yc>about 25 μm, xd>about 25 μm, and yd>about 25 μm.

An acoustic wave device includes a support substrate, a piezoelectric layer on the support substrate, and at least one lithium niobate layer and first and second principal surfaces opposed to each other, and first and second IDT electrodes respectively on the first and second principal surfaces. Each of the first and second IDT electrodes includes electrode fingers. A duty ratio of each of the first and second IDT electrodes is equal to or greater than about 0.6. Directions of polarization of the piezoelectric layer are inverted in a thickness direction of the piezoelectric layer.