11131results about "Impedence networks" patented technology

Aspects of this disclosure relate to an acoustic wave resonator with a patterned conductive layer. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The interdigital transducer electrode can include a bus bar and fingers extending from the bus bar. The fingers can each include an edge portion and a body portion. The patterned conductive layer can overlap the edge portions of the fingers. The patterned conductive layer can conductive portions that are spaced apart from each other. A portion of the temperature compensation layer can be positioned between the patterned conductive layer and the interdigital transducer electrode.

An acoustic wave device includes a support, a piezoelectric layer on the support, and an IDT electrode including first and second electrode fingers. When a thickness of the piezoelectric layer is d and a center-to-center distance of the first and second electrode fingers adjacent to each other is p, d / p is less than or equal to about 0.5. When an imaginary line connecting tips of the first electrode fingers is an envelope, a direction in which the envelope extends and the direction of the Y-axis intersect each other, and about 9°≤|α|≤about 14° is satisfied, where |α| is an absolute value of a slant angle α. The slant angle α is an angle of a corner defined by the direction in which the envelope extends and the direction of the Y-axis and is an angle other than 0°.

Aspects of this disclosure relate to a bulk acoustic wave device that includes a multi-layer raised frame structure. The multi-layer raised frame structure includes a first raised frame layer positioned between a first electrode and a second electrode of the bulk acoustic wave device. The first raised frame layer has a lower acoustic impedance than the first electrode. The first raised frame layer and the second raised frame layer overlap in an active region of the bulk acoustic wave device. Related filters, multiplexers, packaged modules, wireless communication devices, and methods are disclosed.

Aspects of this disclosure relate to an acoustic wave device with transverse mode suppression. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. The mass loading strip can have a sidewall that is tapered inwardly from a bottom side of the mass loading strip to a top side of the mass loading strip. The top side can be shorter than the bottom side.

Aspects of this disclosure relate to acoustic wave filters with bulk acoustic wave resonators configured to excite an overtone mode as a main mode. A bulk acoustic wave resonator of the filter can include a plurality of stacked piezoelectric layers positioned between a pair of electrodes.

An acoustic wave device includes first and second acoustic wave resonators, each including a piezoelectric layer and a functional electrode, and an acoustic coupling layer laminated between the piezoelectric layer of each of the first and second acoustic wave resonators. Each of the functional electrodes of the first and second acoustic wave resonators includes at least one pair of electrode fingers. In each of the first and second acoustic wave resonators, when a thickness of the piezoelectric layer is defined as d and a center-to-center distance of the electrode fingers adjacent to each other is defined as p, d / p is about 0.5 or smaller. The first and second acoustic wave resonators face each other across the acoustic coupling layer.

An acoustic wave device includes acoustic wave resonators each including a support substrate, a piezoelectric body layer, and a functional electrode. The support substrate includes a cavity portion overlapping a portion of the functional electrode in a first direction. The cavity portion is connected to an opening in a portion of the support substrate facing the piezoelectric body layer. The acoustic wave resonators include a first resonator and a second resonator with a larger intersecting width of the functional electrode than the first resonator. A taper angle of the first resonator is larger than a taper angle of the second resonator.

Aspects of this disclosure relate to acoustic wave devices on stacked die. A first die can include first acoustic wave device configured to generate a boundary acoustic wave. A second die can include a second acoustic wave device configured to generate a second boundary acoustic wave, in which the second die is stacked with the first die. The first acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and high acoustic velocity layers on opposing sides of the piezoelectric layer. The high acoustic velocity layers can each have an acoustic velocity that is greater than a velocity of the boundary acoustic wave.

The invention relates to the field of pressure sensors, in particular to a pressure sensor and a processing method, and a chip comprises a silicon substrate, a silicon dioxide dielectric layer, a device layer, a metal electrode and packaging glass. The device layer comprises a silicon carbide single crystal device layer and a silicon device layer; the silicon carbide single crystal device layer is arranged on the silicon device layer; the silicon device layer, the silicon dioxide dielectric layer and the silicon substrate are connected in sequence; the device layer is etched to form a sensitive resistor device layer, an annular sealing region and a micro-channel; the sensitive resistance device layer is isolated from the annular sealing area through the micro-channel; the device layer, the silicon dioxide dielectric layer and the silicon substrate are etched to form a cross beam etching area; the silicon substrate is etched to form a silicon pressure cavity and a beam film; the metal electrode is arranged on the top of the device layer; and the packaging glass anode is bonded at the top of the device layer or the bottom of the silicon substrate so as to solve the problems of low high temperature resistance and low sensitivity of the MEMS pressure sensor.

A method for manufacturing a vibration element that includes a base portion, a first vibration arm and a second vibration arm that extend from the base portion along a first direction and are arranged along a second direction intersecting the first direction, and bottomed grooves on both main surfaces of the first vibration arm and both main surfaces of the second vibration arm includes: a preparing step of preparing a crystal substrate; a protective film forming step of forming a protective film on the crystal substrate except for groove regions that are regions in which the grooves are formed; and a dry etching step of dry etching the crystal substrate through the protective film to form the grooves. The grooves provided in at least one of the first vibration arm and the second vibration arm include a first groove and a second groove arranged along the second direction.

The invention discloses an MEMS device architecture, which comprises a cap layer, a device layer and a substrate layer, the cap layer is bonded with the device layer, the bonded whole is bonded with the substrate layer, the cap layer is manufactured based on a first silicon substrate, the bottom of the cap layer is provided with a cavity structure, and the cap layer is internally provided with a high-deep groove structure. A silicon dioxide film is arranged on the groove wall of the high-deep groove structure, polycrystalline silicon is deposited and filled in the high-deep groove structure, and a silicon dioxide layer is arranged on the upper surface of the first silicon substrate; the device layer is manufactured based on an SOI wafer and comprises a first silicon structure layer composed of top layer silicon, a buried oxide layer and a second silicon structure layer composed of back substrate silicon. The substrate layer comprises a second silicon substrate, a bottom layer cavity is formed in the top face of the second silicon substrate, and exhaust holes are formed in the bottom face of the second silicon substrate. According to the method, deep groove etching, polycrystalline silicon groove filling and bonding technologies are combined, advanced materials such as the SOI wafer and the polyimide layer are utilized, and excellent signal isolation and flexibility of various MEMS IMU applications are achieved.

Aspects of this disclosure relate to bulk acoustic wave devices that have a raised frame structure, and filters that utilize the bulk acoustic wave devices. The raised frame structure can include a first raised frame layer that has a relatively low acoustic impedance. The raised frame structure can include a second raised frame layer that has a relatively high acoustic impedance. The first raised frame layer can extend inward further than the second raised frame layer. A width of the first raised frame layer that overlaps the first and second electrodes is between about 1.5 times to about 4 times larger than the combined thickness of the first electrode, the piezoelectric layer, and the second electrode.

An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, an IDT electrode on the piezoelectric layer and including a pair of busbars and electrode fingers, and mass addition films on the electrode fingers. An acoustic reflection portion overlaps at least a portion of the IDT electrode. d / p is about 0.5 or smaller. A region in which adjacent electrode fingers overlap each other is a cross region including a central region, and first and second edge regions. At least a portion of the mass addition films overlap the central region. A width of at least one of the mass addition films is different from a width of other mass addition films.

The invention relates to an MEMS mode wafer, an MEMS probe card detection method, an MEMS probe card detection device and a storage medium. The detection method is applied to MEMS wafer detection equipment, and comprises the following steps: loading test configuration parameters of an MEMS probe card to be detected; fixing the MEMS probe card to be tested on a probe seat of test equipment; placing an MEMS mode wafer matched with the to-be-tested MEMS probe card at a preset target position on a test platform of test equipment; the MEMS mode wafer comprises a test point array which is the same as a to-be-tested MEMS wafer corresponding to the to-be-tested MEMS probe card; starting a visual alignment system, and aligning the MEMS probe card to be tested with the MEMS mode wafer; the MEMS probe card to be tested is calibrated; and executing the test task of the MEMS wafer to be tested, and detecting the MEMS probe card to be tested. The test task is automatically executed by using the MEMS mode wafer, and the efficient test of the MEMS probe card is realized.

Aspects of this disclosure relate to an acoustic wave device having an overtone mode as a main mode. The acoustic wave device is sufficiently asymmetric on opposing sides of a piezoelectric layer over an acoustic reflector such that the main mode of the acoustic wave device is the overtone mode.

The invention discloses an MEMS thermal flow sensor based on a glass film structure and a preparation method of the MEMS thermal flow sensor. The sensor comprises a glass inner silicon substrate, a back cavity, a silicon through column, a heating resistor, a temperature measurement resistor, an environment temperature measurement resistor, a chromium adhesion layer, a PAD port and a silicon nitride protection layer. Wherein the heating resistor is located in the center, and the temperature measuring resistors are symmetrically distributed on two sides of the heating resistor; the back cavity is located on the back of the glass inner silicon substrate, and the heating resistor, the temperature measuring resistor and the environment temperature measuring resistor lead a PAD port to the back of the glass inner silicon substrate through a silicon through column. A thermal temperature difference principle is adopted, and upstream and downstream temperature measuring resistors form a Wheatstone bridge. When the flow velocity is not zero, the Wheatstone bridge outputs, and the larger the flow velocity is, the larger the output is. Based on the glass and silicon composite substrate, the suspension film structure is formed through the silicon etching process, transmission of heat to the substrate is greatly reduced, and the heat utilization rate is increased.

An acoustic wave device includes acoustic wave resonators each including a piezoelectric substrate including a piezoelectric body layer, and an IDT electrode on the piezoelectric substrate and including electrode fingers. At least one of the acoustic wave resonators is an excitation angle change resonator, in which, the piezoelectric body layer includes a propagation axis and the electrode fingers are curved. In the excitation angle change resonator, an excitation direction of an acoustic wave in a portion of one of the electrode fingers is one of first, second, or third directions. An excitation angle of the excitation angle change resonator is not uniform in the IDT electrode.

An acoustic wave device includes a support substrate, a piezoelectric layer, and an IDT electrode. The piezoelectric layer is over the support substrate. The IDT electrode is on the piezoelectric layer, and includes a plurality of electrode fingers. An intersecting width of the plurality of electrode fingers is equal to or smaller than about 5λ.

A packaged acoustic wave component has a device substrate and a metal layer disposed over the device substrate. An acoustic wave device is disposed over at least a portion of the metal layer so that the metal layer is interposed between the device substrate and at least a portion of the acoustic wave device. A cap substrate is spaced above the device substrate, and peripheral wall that is attached to and extends between the device substrate and the cap substrate, the peripheral wall surrounding the acoustic wave device. One or more vias extend through the device substrate and are disposed under the metal layer.

The invention discloses a film bulk acoustic resonator and a filter. The film bulk acoustic resonator comprises a substrate; the substrate comprises a sound reflecting layer; the first electrode is positioned on one side of the substrate; the piezoelectric layer is located on the side, away from the substrate, of the first electrode; the second electrode is located on the side, away from the substrate, of the piezoelectric layer; the first electrode, the piezoelectric layer and the second electrode are overlapped in an effective working area along the thickness direction of the film bulk acoustic resonator; the at least one temperature compensation layer is located between the substrate and the second electrode, and the temperature compensation layer and the effective working area are overlapped in the thickness direction of the film bulk acoustic wave resonator; the temperature compensation layer comprises a plurality of independently arranged temperature compensation structures. By adopting the technical scheme, the temperature drift can be reduced and the performance of the resonator can be improved by arranging the plurality of independently arranged temperature compensation structures, and the working frequency of the resonator can be adjusted by adjusting the area and the thickness of the temperature compensation structures.

The invention relates to the technical field of filters, in particular to an internal shielding component of a power filter, which comprises a shell, a cover plate is mounted at the top of the shell through a cross recessed countersunk head screw, and a metal partition plate is arranged on one side of the inner wall of the shell; the wave-proof sleeve is welded on one side wall of the shell, and the material of the wave-proof sleeve is light nickel-plated copper fabric; when the power supply filter is used, the problem that crosstalk coupling is formed between interference signals can be prevented, the electromagnetic compatibility in the signal transmission process between systems is solved, the anti-wave sleeve is adopted for shielding power supply input of the power supply filter, interference of an input cable on other signals is greatly restrained, and the service life of the power supply filter is prolonged. The electromagnetic compatibility problem of the whole system caused by the fact that high-frequency noise is coupled to a power line is prevented, the shielding effectiveness is improved, the problem of filtering post-stage electromagnetic interference signals is greatly restrained, meanwhile, the heat dissipation area is increased, and the heat dissipation efficiency and effect are improved.

The invention provides an electrostatic driving micro-electro-mechanical device and a driving method thereof, the device comprises at least one electrostatic driving micro-electro-mechanical device, the device comprises a rotating support and at least one one-dimensional direction driving unit, and the first one-dimensional direction driving unit comprises a first electrode and a second electrode which are arranged in the first direction of the rotating support; the electrostatic drive micro-electromechanical device is further provided with a controller, the controller outputs digital signals to the digital-analog converter, the digital-analog converter outputs analog signals to the first electrode and the second electrode through the multi-way change-over switch, the multi-way change-over switch comprises a first selection switch, the first selection switch is a single-pole double-throw change-over switch, and the second selection switch is a single-pole double-throw change-over switch. A static contact of the first selection switch receives an analog signal output by the digital-to-analog converter, and a movable contact of the first selection switch selectively outputs the analog signal to the first electrode or the second electrode. The invention further provides a driving method of the driving device. The electrostatic driving micro-electro-mechanical device is compact in structure and low in production cost.

An acoustic wave device includes a piezoelectric layer and an IDT electrode. The IDT electrode includes first and second busbars, and first and second electrode fingers interdigitated with each other. A virtual line connecting ends of the second electrode fingers is defined as a first envelope, a virtual line connecting ends of the first electrode fingers is defined as a second envelope, and a region between the first and second envelopes is an intersection region. Shapes of the first and second electrode fingers include at least two curved portions different from each other in the intersection region. In the intersection region, a value of at least one of a duty ratio, an electrode finger pitch, and thicknesses of the first and second electrode fingers changes in one of a direction in which the value increases and the direction in which the value decreases.

An acoustic wave device includes a piezoelectric layer, an IDT electrode on the piezoelectric layer and including first and second busbars and first and second electrode fingers, and reflectors on the piezoelectric layer and including reflector fingers. The first and second electrode fingers are each respectively connected at one end to the first and second busbars. Imaginary lines respectively connecting distal end portions of the second and first electrode fingers are defined as first and second envelopes. The IDT electrode includes an intersecting region. The piezoelectric layer includes a propagation axis. The first and second electrode fingers include a curved portion in the intersecting region. The reflector electrode fingers include a curved portion. At least one of the first and second envelopes includes a portion extending at an inclination relative to the propagation axis, and includes a bend at which a direction in which the portion extends changes.

The invention provides a preparation method of an island and beam film structure micro differential pressure sensor with an IC (Integrated Circuit), which comprises the following steps: arranging an N-type buried layer, a P-type buried layer and an island film structure on an SOI (Silicon On Insulator) silicon wafer, then connecting the SOI silicon wafer with a double-parabolic silicon wafer, and arranging a medium isolation groove, an N-type buried layer connecting region, a P well, a P-type buried layer connecting region, a sensitive resistor, a P-type base region, an N-type base region, an N-type emitter region and a P-type emitter region on the SOI silicon wafer. According to the invention, the preparation of the complementary bipolar transistor double-buried layer is completed by combining a semiconductor manufacturing technology and an MEMS manufacturing technology under the condition of not using an epitaxial process; the process flow is integrally simplified, and the preparation efficiency is improved.

The invention discloses a surface acoustic wave resonator and a filter, and the resonator comprises an interdigital structure which comprises a first interdigital region and a second interdigital region; the first interdigital area comprises a plurality of first finger strips, and the second interdigital area comprises a plurality of second finger strips; the reflecting gratings are arranged on the two sides of the interdigital structure in the first direction, and the reflecting gratings, the first finger strips and the second finger strips are located on the same plane; the reflecting grating and the plurality of first finger strips are vertically crossed with each other, and the reflecting grating and the plurality of second finger strips are vertically crossed with each other; in the first direction, each first finger strip and each second finger strip are oppositely arranged, and a gap is formed between each first finger strip and the corresponding second finger strip; in the second direction, the multiple first finger strips are arranged in parallel, and the multiple second finger strips are arranged in parallel; the first direction is perpendicular to the second direction. According to the invention, the leakage of transverse energy in the first direction can be reduced, and the high-order stray mode of the surface acoustic wave resonator in the first direction and the second direction can be suppressed.

An acoustic wave device includes a support substrate including a space portion, a piezoelectric body layer on the support substrate, a functional electrode on the piezoelectric body layer and at least partially overlapping with the space portion in plan view along a lamination direction of the support substrate and the piezoelectric body layer, and a structure on the piezoelectric body layer and having a smaller coefficient of thermal linear expansion than the piezoelectric body layer. The structure includes a region located in a region of the piezoelectric body layer other than a region where the functional electrode is provided and that does not overlap with the space portion in the plan view.

The invention provides a resonance type flow field sensor with an inertia force compensation structure. The resonance type flow field sensor comprises a substrate; the double-end fixed tuning fork is fixed in the middle of the base; the cilium supporting structure is suspended on the base and is positioned at one end of the double-end fixed tuning fork; the comb tooth capacitors are arranged on the substrate and located on the two sides of the double-end fixed tuning fork; the cilia is arranged on the cilia supporting structure; one end of the micro lever is connected with the cilium supporting structure, and the other end is connected with one end of the double-end fixed tuning fork; and the inertia force compensation structure is suspended on the base, is symmetrically arranged relative to the double-end fixed tuning fork, is connected with one end of the double-end fixed tuning fork, and is positioned between the micro lever and the double-end fixed tuning fork. According to the sensor, the change of an air flow field is captured through the cilia on the sensor, the resonant frequency is detected through the capacitor, the flow velocity of the flow field can be obtained, the inertia force compensation structure can compensate interference of inertia force on an output result, and the sensor can still output stable flow velocity of the flow field when being interfered by the inertia force.

The invention discloses a preparation method of a vertical comb-driven MEMS (Micro Electro Mechanical System) micromirror, which comprises the following steps of: forming a through alignment mark and a pre-etched comb structure on a device layer by using a first composite mask, and forming the through alignment mark and the pre-etched comb structure on the back surface of the device layer on a first substrate through a composite mask process, after the first substrate and the second substrate are bonded, the self-alignment composite mask of the comb tooth structure is aligned with the back face pre-etched comb tooth structure through the through alignment mark, high-precision alignment of the comb tooth structure is achieved, accumulated errors are avoided, and the yield of device preparation is improved.

The invention provides a manufacturing method of an MEMS device and the MEMS device, and the manufacturing method comprises the steps: providing a first wafer which is provided with a groove; a protective layer is arranged in the groove; providing a second wafer, and bonding the second wafer and the first wafer to seal the groove to obtain a first cavity; the second wafer is etched to form a comb tooth structure, and the protection layer is used for protecting the comb tooth structure. According to the embodiment of the invention, the protection layer is arranged in the first cavity of the first wafer as a buffer layer, so that when the second wafer is etched to form the comb tooth structure, the plasma backwash in the over-etching stage can be reduced, the comb tooth structure is further protected, the damage to the bottom of the comb tooth caused by the backwash of etching particles is reduced and solved, and the service life of the comb tooth structure is prolonged. Therefore, the mechanical strength and the anti-failure capability of the device are enhanced.