88 results about "Thin-film bulk acoustic resonator" patented technology

The invention relates to an FBAR-based MIM on-chip capacitor, a high-integration chip structure of the FBAR-based MIM on-chip capacitor in a hybrid FBAR circuit, and electronic equipment. The chip structure comprises a film bulk acoustic resonator and a capacitor which are arranged on the same substrate; the film bulk acoustic resonator comprises an acoustic wave reflection structure, and a lower electrode, a piezoelectric layer and an upper electrode which are laminated on the acoustic wave reflection structure. The capacitor comprises an upper electrode, a lower electrode and a central dielectric layer, wherein the upper electrode and the lower electrode are stacked on at least three metal layers formed on a substrate; the dielectric constant of the central dielectric layer is greater than 6; the thickness of each metal layer in the upper electrode and the lower electrode of the capacitor is not less than the skin depth, and the outermost upper electrode sub-layer and the outermost lower electrode sub-layer are the sub-layers with the largest thickness in the metal layers; the middle layer upper electrode sub-layer and the resonator upper electrode are made of the same material, the middle layer lower electrode sub-layer and the resonator lower electrode are made of the same material, the innermost layer upper electrode sub-layer and the innermost layer lower electrode sub-layer are not diffused with the material of the central dielectric layer, and the area of the capacitor is not larger than five times of the area of the film body acoustic resonator.

Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface. A back surface of a single-crystal piezoelectric plate is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on a front surface of the piezoelectric plate with interleaved IDT fingers of the IDT disposed on the diaphragm. Back-side fingers are formed the back surface of the diaphragm.

The invention relates to the technical field of touch, in particular to an FBAR-based slip spectrum touch sensor, a sensor array and a preparation method. The tactile sensor comprises a thin film bulk acoustic resonator, the thin film bulk acoustic resonator comprises a substrate, a Bragg reflector, a lower electrode, a piezoelectric layer and an upper electrode, and the substrate, the Bragg reflector, the lower electrode, the piezoelectric layer and the upper electrode are sequentially stacked from bottom to top; moreover, the upper electrode is provided with a microstructure far away from the piezoelectric layer or close to the piezoelectric layer, and the microstructure is used for converting slippage into shear load. According to the designed tactile sensor structure, high-signal-noise output of the slip signal can be achieved, accurate slip detection can be achieved through the output slip spectrum, and meanwhile the friction state and material texture fingerprint output can be quantized.

An acoustic resonator device is provided that includes a substrate having a surface; a piezoelectric layer attached to the surface of the substrate via an intermediate layer, the piezoelectric layer including a portion that is over a cavity in the intermediate layer; a conductor pattern including an interdigital transducer (IDT) on a surface of the piezoelectric layer and having interleaved fingers on the piezoelectric layer; a dielectric layer at least between the interleaved fingers of the IDT; and a dielectric cover over the IDT and the piezoelectric layer, the dielectric cover including a bottom surface, wherein at least a portion of the dielectric cover is attached to a portion of the conductor pattern, wherein the conductor pattern includes at least two metal layers including a first metal layer of the interleaved fingers of the IDT and a second metal layer attached to the dielectric cover.

The invention discloses a film bulk acoustic resonator and a preparation method thereof. Comprising a substrate which comprises a first cavity; the first electrode is positioned on one side of the substrate; the first piezoelectric layer is located on the side, away from the substrate, of the first electrode; the second electrode is located on the side, away from the substrate, of the first piezoelectric layer; the second piezoelectric layer is located on the side, away from the substrate, of the second electrode; the third electrode is located on the side, away from the substrate, of the second piezoelectric layer; the temperature compensation layer is located between the second electrode and the second piezoelectric layer; along the thickness direction of the film bulk acoustic resonator, the first electrode, the first piezoelectric layer, the second electrode, the temperature compensation layer, the second piezoelectric layer and the third electrode are overlapped in an effective working area; the third electrode is connected in parallel with the second electrode. The temperature compensation layer is arranged between the middle electrode and the upper electrode, and the upper electrode is combined to lead out the middle electrode to realize a parallel structure, so that the resistance Rs of the upper electrode can be effectively reduced, and the Q value of the resonator is improved.

This invention relates to a thin-film bulk acoustic resonator with small lateral excitation and enhanced Q-factor. An acoustic resonator device includes a conductor pattern formed on the surface of a piezoelectric plate. The conductor pattern includes n staggered parallel fingers comprising a first busbar, a second busbar, and an interdigital transducer (IDT), where n is a positive integer. The fingers extend alternately from the first busbar and the second busbar. The first finger and the n'th finger are positioned at opposite ends of the IDT. The conductor pattern also includes a first reflector element adjacent to and parallel to the first finger; and a second reflector element adjacent to and parallel to the n'th finger. When an RF signal is applied between the first busbar and the second busbar, the first reflector element has a substantially the same potential as the first finger, while the second reflector element has a substantially the same potential as the n'th finger.

The invention discloses a temperature compensation type film bulk acoustic resonator and a preparation method thereof. The temperature compensation type film bulk acoustic resonator comprises a substrate structure, a resonance cavity structure, a temperature compensation layer, a seed layer, an acoustic composite film and an acoustic composite film structure. The resonant cavity structure sets a release boundary based on a release or addition process step of the substrate cavity; the substrate adopts a wafer with an oxide layer, and the oxide layer serves as a temperature compensation layer of the resonator; the seed layer is located above the temperature compensation layer and below the sound wave composite film structure; the sound wave composite film comprises a piezoelectric film, a bottom conductive film and a top conductive film. Due to the temperature compensation layer on the lower portion of the seed layer, the film bulk acoustic resonator has better temperature stability, and the cost of an extra temperature compensation preparation technology can be reduced. According to the designed preparation process, only an acoustic resonance area at the lower part of the electrode is reserved, the boundary of the resonator is in contact with air, and the prepared film bulk acoustic wave resonator has better performance.

The application provides a film bulk acoustic resonator and a preparation method thereof and a filter. The film bulk acoustic resonator comprises a substrate and a piezoelectric oscillation structure. The piezoelectric oscillation structure comprises a bottom electrode, a piezoelectric film layer and a top electrode which are sequentially formed on a top surface of the substrate. The bottom electrode is covered by the piezoelectric film layer. The piezoelectric film layer is provided with a through hole. The bottom electrode is led to the piezoelectric film layer away from the top surface of the substrate through a conductor in the through hole. The top surface of the substrate is provided with a groove. The groove is filled with a conductive block. The conductive block is in contact with the bottom electrode. The orthographic projection of the through hole on the substrate is located within the range of the area where the groove is located. The bottom electrode at least partially covers the groove. The film bulk acoustic resonator provided by the application can have higher reliability.

The present application relates to the technical field of semiconductor devices. In particular, disclosed are a film bulk acoustic resonator and a preparation method therefor. The film bulk acoustic resonator comprises a substrate, and a lower electrode, a piezoelectric layer, an upper electrode and a passivation layer which are stacked on the substrate, wherein an overlapping portion of projections of the lower electrode, the piezoelectric layer and the upper electrode on the substrate is an active region; and a compensation layer is further formed on the piezoelectric layer, a hollowed-out groove is formed in the compensation layer, and the hollowed-out groove is formed along a projection edge of the active region, such that the passivation layer sags at the position where the passivation layer covers the hollowed-out groove to form a recess. In the present application, the hollowed-out design of a compensation layer enables the natural formation of a recess in the surface of a passivation layer located above the compensation layer, thereby effectively improving the manufacturing yield.

The invention discloses a film bulk acoustic resonator and a filter, and belongs to the technical field of resonators. In the film bulk acoustic resonator, an upper electrode is arranged on a first side surface of a piezoelectric film, and a lower electrode is arranged on a second side surface of the piezoelectric film; wherein the piezoelectric film is provided with a first hole, the direction perpendicular to the first side face serves as the projection direction, the first side face serves as a projection plane, and the projection of the first hole on the first side face and the projection of the upper electrode on the first side face have an overlapped area. Through the arrangement of the first hole, effective suppression of a transverse parasitic mode is realized, the problem that sound waves in a transverse mode are repeatedly reflected in the piezoelectric film is relieved, and sound wave energy is restrained within a resonance area as far as possible, so that the Q value of the film bulk acoustic resonator is remarkably improved.

Disclosed are a semiconductor structure and a method for preparing a semiconductor structure, a film bulk acoustic resonator and a method for preparing a film bulk acoustic resonator. The method for preparing a semiconductor structure according to the present application includes: growing a first nitride layer on a surface, including an active silicon layer, of a substrate, and selectively removing a partial area of the active silicon layer to form a hollow structure, so that the first nitride layer and the substrate are partially separated, and then a stress between the substrate and the first nitride layer is released. A crack of the semiconductor structure is reduced and quality of the semiconductor structure is improved while a thickness of the semiconductor structure is guaranteed.

The application discloses a wide-passband thin film bulk acoustic resonator (FBAR) wave trap structure, and relates to the field of microwave passive chips, comprising: a FBAR wave trap chip capable of introducing an external matching inductance at a middle-stage series resonator and a wide-passband matching circuit structure; the application introduces two or more external matching inductances at the position of the middle-stage series resonator of the FBAR wave trap chip, the matching inductances can introduce one or more transmission poles at the two ends of the stop band of the FBAR wave trap, the position of the transmission poles can be flexibly adjusted, the insertion loss and the standing wave characteristics of the far end of the passband can be optimized, the problem of the mutual contradiction between the stop band suppression and the insertion loss and the standing wave of the passband can be effectively solved, and the passband bandwidth is greatly improved.

An acoustic resonator device includes a substrate having a surface and a single-crystal piezoelectric plate bonded to the substrate surface. A portion of the piezoelectric plate forms a diaphragm that spans a cavity. A conductor pattern including an interdigital transducer (IDT) formed on a surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. A dielectric cover is disposed over the IDT and the plate, and the dielectric cover forms an air gap above the IDT and the plate.

Devices and methods related to gradient raised frames in film bulk acoustic resonators. According to certain aspects, a film bulk acoustic resonator device can include a substrate, first and second metal layers implemented over the substrate, a piezoelectric layer between the first and second metal layers, and a gradient raised frame implemented relative to one of the first and second metal layers and configured to improve reflection of lateral mode waves and to reduce conversion of main mode waves into lateral mode waves.

The present application relates to the technical field of semiconductor devices, and specifically discloses a film bulk acoustic resonator and a manufacturing method therefor. The film bulk acoustic resonator comprises a substrate, and a lower electrode, a piezoelectric layer, a thickening layer and an upper electrode which are stacked on the substrate. An overlapping portion of projections of the lower electrode, the piezoelectric layer and the upper electrode on the substrate is an active region. An air wing and an air bridge located on two opposite sides of the active region are formed between the thickening layer and the piezoelectric layer. At a position corresponding to the air bridge, the thickening layer and the upper electrode are recessed towards the side of the piezoelectric layer, so that the thickening layer is in contact with the piezoelectric layer to cause a piezoelectric effect, and the air bridge is divided into a first air sub-cavity and a second air sub-cavity. The present application can effectively reduce the strong parasitic peak introduced by the thickening structure, so that the resonator has better properties.

The present disclosure relates to the technical field of semiconductors. Provided are a film bulk acoustic resonator and a preparation method therefor. The preparation method for the film bulk acoustic resonator comprises: providing a first substrate structure, and forming a first piezoelectric layer on the first substrate structure; forming a first temperature compensation layer on the first piezoelectric layer; sequentially forming a first electrode layer and a first bonding layer on the first temperature compensation layer; providing a second substrate structure, and forming a second bonding layer on the second substrate structure; bonding the first bonding layer and the second bonding layer; and removing the first substrate structure, and sequentially forming a second temperature compensation layer and a second electrode layer on the exposed first piezoelectric layer. The preparation method for the film bulk acoustic resonator uses a bonding approach. The first temperature compensation layer and the first electrode layer are first prepared on one side of the first piezoelectric layer, and then the second temperature compensation layer and the second electrode layer are prepared on the other side of the first piezoelectric layer. Therefore, the temperature stability of the film bulk acoustic resonator can be improved, and the superior performance thereof can also be maintained.

An acoustic resonator device includes a substrate having a surface and a piezoelectric plate having front and back surfaces, with the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. Stripes of a dielectric material formed over the plate in gaps between ends of the interleaved fingers and opposing busbars of the IDT.

This invention discloses a magnetically tuned thin-film bulk acoustic resonator (FBAR), its fabrication method, and its applications. The FBAR comprises a first electrode, a piezoelectric material layer, and a second electrode stacked sequentially. The second electrode comprises at least one alternating layer of a first material layer and at least one layer of a second material layer, wherein the at least one first material layer is a magnetostrictive thin film, and the magnetostrictive thin film and the piezoelectric material layer cooperate to form a magnetoelectric heterojunction. This invention provides a magnetically tuned thin-film bulk acoustic resonator that uses a magnetically stretched composite thin film as the upper electrode. Utilizing the magnetoelectric effect of the magnetic and piezoelectric materials, the resonant frequency of the FBAR can be adjusted in the low-frequency, mid-frequency, and even high-frequency range under the influence of a magnetic field.

The application discloses a film bulk acoustic resonator based on size effect and application thereof. The film bulk acoustic resonator based on size effect comprises a first electrode and a second electrode which are sequentially stacked on a resonant cavity, and a piezoelectric layer is arranged between the first electrode and the second electrode; and a nanoscale-thickness insertion layer is further arranged between the first electrode and the second electrode. The FBAR temperature sensor provided by the embodiment of the application inserts a nanoscale-thickness insertion layer in the FBAR, thereby greatly improving the detection sensitivity of the FBAR temperature sensor without obviously reducing the resonant frequency of the device.

An acoustic resonator is provided that includes a piezoelectric layer having at least a portion attached to a substrate either directly or via one or more intermediate layers; and a conductor pattern on the piezoelectric layer. The conductor pattern includes a multi-mark interdigital transducer having a plurality of interleaved fingers extending from opposing busbars, and a length between outermost fingers of the interleaved fingers. The IDT is divided along the length into at least three sections. A change in the mark between the at least three sections has a smaller effect on a resonance frequency of a primary shear acoustic mode of all of the at least three sections of the acoustic resonator in comparison to an effect that the change in the mark has on a spurious acoustic mode other than the primary shear acoustic mode of all of the at least three sections.

The invention discloses an FBAR structure with a multi-edge resonant structure and a manufacturing method. The FBAR structure comprises a core resonance structure and an edge structure, and the edge structure comprises a first edge resonance structure and a second edge resonance structure which are alternately distributed at the edge of the core resonance structure in the direction perpendicular to the thickness direction of the resonance area. And the first edge resonance structure, the second edge resonance structure and the core resonance structure adopt continuous piezoelectric layers. The bottom electrodes and the top electrodes of the first edge resonance structure and the second edge resonance structure are symmetrically arranged relative to the piezoelectric layer, and each of the bottom electrodes and the top electrodes is composed of two layers of electrodes made of different materials. By adjusting the thickness of each electrode, the series resonance frequencies of the core resonance structure, the first edge resonance structure and the second edge resonance structure are equal, the parallel resonance frequencies of the core resonance structure, the first edge resonance structure and the second edge resonance structure are equal, the offset of the parallel resonance point frequency is reduced, and the quality factor of the FBAR is improved.

The invention discloses a dual inductance network optimization method of a broadband BAW filter, which belongs to the technical field of filters, and comprises the following steps: establishing a Mason equivalent model of a film bulk acoustic wave resonator to obtain a target resonator; based on the target resonator, constructing a filter with a three-step structure; adding inductors to the input end and the output end of the filter with the three-step-shaped structure to obtain a capacitive impedance optimization filter; an inductor is connected in series to each parallel resonance branch of the capacitive impedance optimization filter to obtain an out-of-band rejection optimization filter; and determining a branch of the out-of-band rejection optimization filter, and performing gradient optimization to obtain an optimized filter. The problem that a radio frequency front-end filter is difficult to consider the in-band flatness, the out-of-band rejection capability and the structure compactness while realizing broadband coverage is solved.

Acoustic wave resonator devices and filters are disclosed. An acoustic wave resonator includes a substrate and a piezoelectric plate having parallel front and back faces, the back face attached to the substrate. A decoupling dielectric layer is located on the front face of the piezoelectric plate. An interdigital transducer (IDT) is formed on the decoupling dielectric layer such that interleaved fingers of the IDT are located over a portion of the piezoelectric plate that is suspended over a cavity formed in the substrate.

There are disclosed acoustic resonators. An acoustic resonator includes a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to a surface of a substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A conductor pattern on the front surface includes a multi-pitch interdigital transducer (IDT) with interleaved fingers of the IDT disposed on the diaphragm.

This invention relates to a MEMS device assembly, comprising: a MEMS device having an encapsulation surface; and an encapsulation film for forming an encapsulation space for encapsulating the MEMS device. The encapsulation film has a top portion, an edge portion, and a connecting portion between the top and the edge portion, wherein the edge portion, the connecting portion, and the top portion define the encapsulation space, and the edge portion is disposed on the encapsulation surface, wherein the connecting portion is arc-shaped. The angle formed between the encapsulation film and the encapsulation surface can be in the range of 2 degrees to 45 degrees. The encapsulation space can be an arc-shaped space. The MEMS device can be a thin-film bulk acoustic resonator. This invention also relates to an electronic device having the above-described MEMS device assembly.

Disclosed in the present invention are a film bulk acoustic resonator having a dual-interdigital electrode structure and a manufacturing method therefor. The bulk acoustic resonator comprises a substrate, a piezoelectric layer, and interdigital electrodes which are different in height and which are offset ; the substrate is internally provided with a cavity; the piezoelectric layer is arranged on the substrate; and the interdigital electrodes are arranged on the upper surface of the piezoelectric layer and comprise an interdigital electrode A and an interdigital electrode B, the density of a metal material used by the interdigital electrode B being greater than that of the interdigital electrode A, the thickness of the interdigital electrode B being less than that of the interdigital electrode A, and the interdigital electrode A and the interdigital electrode B being offset. The bulk acoustic resonator can suppress clutter, and increase bandwidths and Q values.

The application provides a film bulk acoustic resonator with a multilayer composite substrate and a preparation method thereof, which comprises a first substrate, a second substrate, a third substrate, a bottom electrode, a piezoelectric layer and a top electrode; the third substrate, the second substrate and the first substrate are sequentially arranged to form a composite substrate; the bottom electrode is arranged on the third substrate; the piezoelectric layer is arranged on the bottom electrode, and the piezoelectric layer is connected with the bottom electrode and the third substrate; a cavity structure is formed among the third substrate, the bottom electrode and the piezoelectric layer; the top electrode is arranged on the piezoelectric layer; a release hole opening is arranged on the piezoelectric layer, and the release hole opening is communicated with the cavity. The application can obtain a cavity with high mechanical stability and almost no residues, and can limit the parasitic capacitance by arranging the composite substrate with the resistivity gradually increasing, and has the advantages of simple process and easy implementation.

The application discloses a preparation method of a film bulk acoustic resonator and belongs to the technical field of microelectronic manufacturing. The preparation method specifically comprises the following steps: S100, providing a substrate, etching a concave cavity on a processing surface of the substrate; S200, sequentially covering a protection layer and a sacrifice layer on the processing surface of the substrate; S300, etching a groove on the protection layer and the sacrifice layer and depositing a longitudinal Bragg reflection layer in the groove; S400, depositing a piezoelectric stack structure on the protection layer, the sacrifice layer and the longitudinal Bragg reflection layer; S500, forming a transverse reflection layer on the piezoelectric stack structure; and S600, removing the sacrifice layer to form a cavity. The preparation method of the application omits a bonding process, reduces the flatness requirement of the substrate, reduces the implementation difficulty of the preparation method, shortens the process cycle of the preparation method, and adopts an etching process to replace an existing CMP process to make the longitudinal Bragg reflection layer on the protection layer, so that the longitudinal Bragg reflection layer is flush with the surface of the protection layer, thereby improving the Q value of the film bulk acoustic resonator.

The application discloses a film bulk acoustic resonator and a preparation method thereof. The film bulk acoustic resonator comprises a substrate, a transducer stack structure, a temperature compensation layer and a first protruding structure. The transducer stack structure is located on one side of the substrate. The temperature compensation layer and the first protruding structure are located inside the transducer stack structure, and the first protruding structure is located on a side of the temperature compensation layer away from the substrate. The transducer stack structure comprises a working area. In the thickness direction of the film bulk acoustic resonator, the projection of the temperature compensation layer on the plane of the substrate covers the projection of the working area on the plane of the substrate. The projection of the working area on the plane of the substrate covers the projection of the first protruding structure on the plane of the substrate, and the first protruding structure is connected with the side surface of the temperature compensation layer. The technical scheme of the application reduces the frequency temperature drift of the film bulk acoustic resonator and improves the Q value of the film bulk acoustic resonator.

This application provides a thin-film bulk acoustic wave resonator without sacrificial layer filling and its fabrication method. A micro-hole array is fabricated on a substrate using photolithography and deep etching processes. Subsequently, chemical vapor deposition is used to form a conformal covering structure on the inner wall of the micro-holes and the substrate surface. Then, on a substrate with a protective layer wall, the bottom electrode, piezoelectric layer, top electrode, and passivation layer are deposited and patterned sequentially to construct a complete resonant stack structure. Finally, utilizing the selective etching characteristics of anisotropic wet etchants such as TMAH (the lateral etching rate is significantly faster than the longitudinal etching rate), the substrate is laterally etched through the micro-hole channels to form a complete air gap cavity below the resonant stack structure, while retaining the longitudinal support structure.