506 results about "Planar electrode" patented technology

The film acoustically-coupled transformer (FACT) has a first and second decoupled stacked bulk acoustic resonators (DSBARs). Each DSBAR has a lower film bulk acoustic resonator (FBAR), an upper FBAR atop the lower FBAR, and an acoustic decoupler between them FBARs. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. A first electrical circuit interconnects the lowers FBAR of the first DSBAR and the second DSBAR. A second electrical circuit interconnects the upper FBARs of the first DSBAR and the second DSBAR. In at least one of the DSBARs, the acoustic decoupler and one electrode of the each of the lower FBAR and the upper FBAR adjacent the acoustic decoupler constitute a parasitic capacitor. The FACT additionally has an inductor electrically connected in parallel with the parasitic capacitor. The inductor increases the common-mode rejection ratio of the FACT.

The band-pass filter has a stacked pair of film bulk acoustic resonators (FBARs) and an acoustic decoupler between the FBARs. Each of the FBARs has opposed planar electrodes and a layer of piezoelectric material between the electrodes. The acoustic decoupler controls the coupling of acoustic energy between the FBARs. Specifically, the acoustic decoupler couples less acoustic energy between the FBARs than would be coupled by direct contact between the FBARs. The reduced acoustic coupling gives the band-pass filter desirable in-band and out-of-band properties.

The decoupled stacked bulk acoustic resonator (DSBAR) device has a lower film bulk acoustic resonator (FBAR), an upper FBAR stacked on the lower FBAR, and an acoustic decoupler between the FBARs. Each of the FBARs has opposed planar electrodes and a layer of piezoelectric material between the electrodes. The acoustic decoupler has acoustic decoupling layers of acoustic decoupling materials having different acoustic impedances. The acoustic impedances and thicknesses of the acoustic decoupling layers determine the acoustic impedance of the acoustic decoupler, and, hence, the pass bandwidth of the DSBAR device. Process-compatible acoustic decoupling materials can then be used to make acoustic decouplers with acoustic impedances (and pass bandwidths) that are not otherwise obtainable due to the lack of process-compatible acoustic decoupling materials with such acoustic impedances.

The present invention relates to a novel thermal-sensitive resistive apparatus, such as PTC and NTC, which allocates planar electrode films on the top and bottom surfaces of a prior art thermal-sensitive resistive apparatus, such as a PTC apparatus, to laminate with an outer electrode layer. A plurality of interconnection vias are electroplated with conductive material to connect to any plane. It is convenient to surface mount the apparatus of the present invention on a printed circuit board. The present invention can largely increase the dimensional stability of components and overcome the disadvantage that thermal diffusion of the prior are surface mounted resistive apparatus is affected easily by line width and environments.

The band-pass filter has first terminals, second terminals, a first decoupled stacked bulk acoustic resonator (DSBAR), a second DSBAR, and an electrical circuit connecting the first DSBAR and the second DSBAR in series between the first terminals and the second terminals. Each DSBAR has a first film bulk acoustic resonator (FBAR), a second FBAR and an acoustic decoupler between the FBARs. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes.

The band-pass filter has an upper film bulk acoustic resonator (FBAR), an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each of the FBARs has opposed planar electrodes and a piezoelectric element between the electrodes. The acoustic decoupler controls the coupling of acoustic energy between the FBARs. Specifically, the acoustic decoupler couples less acoustic energy between the FBARs than would be coupled by direct contact between the FBARs. The reduced acoustic coupling gives the band-pass filter desirable in-band and out-of-band properties.

A new class of microwires and a method for their assembly from suspensions of metallic nanoparticles in water under the influence of dielectrophoretic forces. The wires are formed in the gaps between planar electrodes in an alternating current (AC), allowing manipulation of the particles without the interference of electro-osmotic and electro-chemical effects resent in direct current (DC) systems. The structures created cover a new size domain of microwires of micrometer diameter and millimeter to centimeter length, closing the gap between tradition metallic wires and the more recently synthesized nanowires and carbon tubes. The wires have good Ohmic conductance and their thickness, conductivity, and fractal dimension can be controlled by varying the frequency and voltage of the applied field. The formation of such self-assembled structures can be used in miniaturization of electrical circuits for application in sensors, memory elements, and wet electronic circuits, such as electrically readable bioarrays and biological-electronic interfaces.

Single-sided optoelectrowetting (SSOEW)-configured substrates are provided, as well as microfluidic devices that include such substrates. The substrates can include a planar electrode, a photoconductive (or photosensitive) layer, a dielectric layer (single-layer or composite), a mesh electrode, and a hydrophobic coating. Fluid droplets can be moved across the hydrophobic coating of such substrates in a light-actuated manner, upon the application of a suitable AC voltage potential across the substrate and the focusing of light into the photoconductive layer of the substrate in a location proximal to the droplets. Walls can be disposed upon the substrates to form the microfluidic devices. Together the walls and substrate can form a microfluidic circuit, through which droplets can be moved.

A photoelectric conversion device includes a semiconductor substrate, an insulating layer provided on the semiconductor substrate, an electrode provided on the insulating layer, a photoelectric conversion film provided on the electrode for converting received light to charges, a line connected between the electrode and the semiconductor substrate, a first planar electrode provided in the insulating layer and connected to the electrode, and a second planar electrode provided in the insulating layer between the first planar electrode and the semiconductor substrate.

A dielectric barrier discharge apparatus for treating a substrate includes a first planar electrode; a dielectric layer disposed on a surface of the first planar electrode; a porous planar electrode spaced above and in a parallel plane with the dielectric layer, wherein the porous planar electrode has a geometric transmission factor greater than 70 percent; and a power supply in electrical communication with the first electrode and the second electrode. A process for treating a substrate includes exposing the substrate surface to reactants produced by the dielectric barrier discharge apparatus.

A method of separating particulate materials of different properties has been developed. It consists of feeding a mixture of dry, powdered materials to one end of the surface of a planar electrode, which is vibrating to move the particles forward. At least one type of the particulate materials acquires a charge via conduction or triboelectrification. Those particles that acquire charges of the same sign as that of the planar electrode are lifted and collected at the V-shaped counter electrodes installed above. The new separation method is particularly useful for removing unburned carbons from fly ash and any other conducting materials from nonconducting ones.

An atmospheric pressure plasma assembly (1) comprising a first and second pair of vertically arrayed, parallel spaced-apart planar electrodes (36) with at least one dielectric plate (31) between said first pair, adjacent one electrode and at least one dielectric plate (31) between said second pair adjacent one electrode, the spacing between the dielectric plate and the other dielectric plate or electrode of each of the first and second pairs of electrodes forming a first and second plasma regions (25,60) characterised in that the assembly further comprises a means of transporting a substrate (70,71,72) successively through said first and second plasma regions (25,60) and an atomiser (74) adapted to introduce an atomised liquid or solid coating making material into one of said first or second plasma regions.

A pulse health device which can impart a sufficient treatment efffect even to the periphery of waist part where waist part, hip part and abdoment part having an irregular shape exist closely to each other. An electrode belt 5 of the pulse health device 1 has has a slit 57 made along the longitudinal direction thereof between planar electrodes H1, H3 on the uper stage side and planar electrodes H2, H4 on the lower stage side. When the electrode belt 5 is applied to the periphery of waist part where the parts of a human body having an irregular shape exist closely to each other, the pulse health device 1 can absorb variation of shape through the slit 57 and since the planar electrodes H1, H2, H3 and H4 can touch the peripehry of the waist part stably, a sufficient treatment effect can be imparted.