167 results about "Planar electrode" patented technology

The invention discloses an MEMS infrared light source with a 3D structure and a preparation method thereof, and the preparation method comprises the steps: cleaning a silicon substrate, depositing supporting layers on the upper surface and the lower surface of the silicon substrate respectively, processing a heating electrode on the supporting layer on the upper surface, and processing to obtain an isolation layer covering the heating electrode and the supporting layer; an infrared radiation material layer is processed in the middle area of the isolation layer, and planar electrodes communicated with the heating electrode are processed on the two sides of the infrared radiation material layer; etching and windowing are carried out on the middle area of the supporting layer on the lower surface of the silicon substrate to form a substrate cavity, etching and windowing are carried out on the supporting layer on the peripheral area of the substrate cavity to form an etching window, substrate body silicon secondary etching is carried out on the lower surface of the silicon substrate to form a communicating cavity, and therefore the MEMS infrared light source with the 3D structure is obtained. According to the preparation method, the communication cavity beneficial to ventilation is formed by etching below the infrared light source through secondary etching, so that the reliability and the stability of high-temperature radiation of the infrared light source are improved.

The invention relates to the technical field of semiconductor gas sensors for gas detection, in particular to an in-situ construction method and application of a gas sensor for volatile aroma substance detection, and the in-situ construction method comprises the following steps: mixing an aqueous solution of zinc nitrate hexahydrate and an aqueous solution of 2-methylimidazole according to different molar ratios to obtain a precursor solution; upwards fixing a planar electrode on the surface of a glass slide, and then transferring the planar electrode into the precursor solution; carrying out hydrothermal reaction on the precursor solution at 90 DEG C for 4 hours, after the hydrothermal reaction is finished, cooling to normal temperature, taking out the glass slide, washing the surface of an electrode by using deionized water, removing impurities, and then carrying out drying treatment; calcining the obtained dried electrode in an air atmosphere at 500 DEG C for 2 hours to construct an in-situ growth semiconductor sensor; according to the present invention, the rapid sensing response on nine volatile aroma substances is achieved, and the excellent gas sensitive characteristic is represented in the gas sensitive research on the volatile substance ocimene in the volatile aroma substances.

The invention relates to the technical field of ultrasonic transducers, and discloses a flexible wearable ultrasonic three-dimensional array and device.The flexible wearable ultrasonic three-dimensional array comprises a transducer array composed of a plurality of transducer units, the transducer units are divided into a plurality of subareas, all the transducer units in each subarea are connected, and the transducer units are arranged in the subareas; the upper plane electrodes of the transducer units in different partitions are not connected, and the lower plane electrodes are connected and then are in common ground; each cross-layer lead unit corresponds to the transducer unit of the corresponding partition, the thickness of each cross-layer lead unit is the same as that of the transducer unit, and each cross-layer lead unit is connected with the upper plane electrode of the transducer unit of the corresponding partition, so that the upper plane electrode and the lower plane electrode are located on the same two-dimensional plane; according to the flexible substrate surface-mounted ultrasonic array, the transmission control of the transducer unit of each subarea is carried out in a two-dimensional plane, and the problems that an existing flexible substrate surface-mounted ultrasonic array connection process is complex in structure and high in cost, and the connection cost is high when the flexible substrate surface-mounted ultrasonic array is connected with a peripheral circuit, so that the clinical large-scale batch processing requirement of the flexible substrate surface-mounted ultrasonic array is difficult to meet are solved.

The invention relates to the technical field of tea aroma detection, in particular to a noble metal-sensitized volatile aroma substance sensor construction and detection method, which comprises the following steps: dissolving zinc acetate dihydrate, urea and trisodium citrate dihydrate in deionized water to obtain a mixed precursor solution; controlling the hydrothermal reaction of the precursor solution; after naturally cooling to room temperature, washing, centrifuging, drying and calcining to obtain a zinc oxide material; the preparation method comprises the following steps: impregnating a zinc oxide material with deionized water, adding an ammonium carbonate solution while stirring, stirring, and then adding a noble metal solution to obtain a noble metal modified zinc oxide mixed solution; centrifuging, drying and calcining to obtain a powder zinc oxide loaded noble metal material; dissolving the zinc oxide loaded noble metal material in ethanol, performing ultrasonic treatment to form turbid liquid, and further dispensing the turbid liquid to the surface of a planar electrode to construct a semiconductor sensor for detecting tea aroma; the sensor prepared by the method has excellent sensing characteristics of high sensitivity, high stability and the like on tea aroma.

The present invention is directed to a multilayer capacitor, a circuit board containing the multilayer capacitor, and an integrated circuit package containing the multilayer capacitor. A multilayer capacitor includes a body containing alternating dielectric layers and internal electrode layers that each include a first electrode and a second, co-planar electrode, the first electrode having a main body with at least one lead tab extending from each of a top edge and a bottom edge thereof. The capacitor also includes a first external terminal and a second external terminal that each wrap from a top surface, along an end surface, to a bottom surface. The first external terminal is electrically connected to the first electrode of the first internal electrode layers along its lead tab leading edges, and the second external terminal is electrically connected to the first electrode of the second internal electrode layers along its lead tab leading edges.

Techniques for forming one or more MIM trench capacitors over one or more planar MIM capacitors in an interconnect region above or below a device layer of an integrated circuit. The MIM trench capacitor(s) is in one or more interconnect layers of the interconnect region, and can have a relatively high height. The MIM trench capacitor includes a first electrode, a capacitor dielectric on the first electrode, and a second electrode on the capacitor dielectric, and runs along the outside surface of a plurality of dielectric fins, which increases the surface area of the capacitor within a relatively small plan footprint. A planar MIM capacitor is beneath the MIM trench capacitor within a same interconnect layer as the MIM trench capacitor. The planar MIM capacitor includes first and second planar electrodes separated by a capacitor dielectric, and may be electrically isolated from, or capacitively coupled to, the MIM trench capacitor.

Disclosed are a method for producing an electrode for a galvanic cell, an electrode for a galvanic cell, a galvanic cell, and uses of the galvanic cell. The method comprises: applying a separator membrane to a planar electrode such that an intermediate space is formed between the planar electrode and the separator membrane; subsequently applying a liquid comprising a particular material to the separator membrane, wherein the liquid comprising material penetrates, by way of capillary forces, at least into the pores of the separator membrane, into the intermediate space between the planar electrode and the separator membrane and into pores of the planar electrode, wherein the liquid is subsequently evaporated. The method makes it easily and inexpensively possible to provide an electrode which exhibits a high energy density at the cell level and high chemical, electrochemical and mechanical stability, exhibits high cycle stability and allows high operating currents.

The present invention discloses a Cu-BTC single crystal resistive humidity sensor and a preparation method, belonging to the field of MOFs material sensing. The Cu-BTC single crystal resistive humidity sensor of the present invention comprises a planar interdigitated electrode produced by ultrafast laser-induced processing of the Cu-BTC single crystal surface and unprocessed Cu-BTC single crystal material between the interdigitated fingers. The planar electrode is prepared by the following steps: S1: preparing a Cu-BTC single crystal sample with a length and width of the to-be-processed surface greater than or equal to 100 μm; S2: using an ultrafast laser processing device to perform ultrafast laser-induced processing on the Cu-BTC single crystal sample in step S1 under set laser processing parameters to obtain the planar interdigitated electrode; wherein the ultrafast laser wavelength is 1030 nm, the pulse width t is 1.2 ps≤t≤10 ps, ​​the processing power P is 3 mW≤P≤8 mW, the scanning speed v is 200 μm / s≤v≤360 μm / s, the processing interval is 1 μm, and the focused spot is 4 μm. The Cu-BTC single crystal resistive humidity sensor can detect humidity in the range of 5% to 90% RH, with a response time of up to 2 s and good selectivity, stability, and cyclability.

The present invention improves the insertion loss of a resonant element. In the resonant element (10), a first via electrode (111) and a second via electrode (112) connect a first planar electrode (101) and a third planar electrode (103). A third via electrode (113) and a fourth via electrode (114) connect the first planar electrode (101) and a second planar electrode (102). When the first planar electrode (101) is viewed from the normal direction (Z) of the first planar electrode (101), a first imaginary line (VL11) connecting the first via electrode (111) and the second via electrode (112) and a second imaginary line (VL12) connecting the third via electrode (113) and the fourth via electrode (114) cross.

The invention relates to a method for preparing a lenticular lens on a conductive surface of a transparent support, the method comprising imprinting a curable resin on the support with a lenticular mold, followed by curing the resin and removing the mold to yield a lenticular device comprising the transparent support and a lenticular lens provided thereon. A small part of the curable resin comprises conductive particles, which after curing provide the lenticular lens with a conductive path between the conductive support surface and the lenticular lens surface. The conductive support surface is in this way easily and directly electrically accessible as a planar electrode, when the lenticular device is incorporated in an electrically switchable liquid crystal cell. Accordingly, the invention further relates to such lenticular device, to a liquid crystal cell comprising such lenticular device, and to an autostereoscopic display device comprising such liquid crystal cell.

The invention discloses a system for continuously preparing graphene through an electrochemical stripping method. The system comprises a stripping assembly, a separating and collecting assembly and a continuous material supplementing assembly. The stripping assembly comprises an electrolytic tank, a graphite electrode device and a counter electrode device, electrolyte is contained in the electrolytic tank, the graphite electrode device and the counter electrode device are both immersed in the electrolyte, the graphite electrode device is coaxially arranged in the counter electrode device, the graphite electrode device is connected with the positive electrode of the direct-current power source through a positive wire, and the counter electrode device is connected with the negative electrode of the direct-current power source through a negative wire. The counter electrode device is connected with the cathode of the direct-current power supply through a cathode wire; and the continuous material supplementing assembly is communicated with the electrolytic tank through a material supplementing pipeline. The invention further discloses a method for continuously preparing the graphene through the electrochemical stripping method. The device has the beneficial effects that the graphite electrode device and the counter electrode device are coaxially arranged inside and outside to form an annular electrode structure, so that the electric field edge effect of a planar electrode is avoided, the electric field distribution is more uniform, and the intercalation and stripping efficiency between graphite layers is further improved.

The invention belongs to the technical field of photoelectric detectors, discloses a photoelectric detector based on ferroelectric / semiconductor heterojunction and a preparation method thereof, and solves the problems of limited carrier separation efficiency, complex device structure, insufficient interface regulation and control means and the like in the photoelectric detector. The photoelectric detector comprises a substrate, a planar electrode pair arranged on the surface of the substrate, and a two-dimensional heterojunction active layer which covers and is attached to the planar electrode pair and a channel region between the planar electrode pair; wherein the two-dimensional heterojunction active layer is formed by vertically stacking a CuInP2S6 thin film and a GeSe thin film in sequence. By constructing a Van der Waals heterojunction active layer and utilizing a built-in electric field formed on a heterojunction interface by ferroelectric polarization, the generation, separation and transmission processes of photon-generated carriers are effectively regulated and controlled, so that the photoelectric detection performance of the device is improved on the premise of not introducing a complex process.

An inductor component 1 comprises a parallelepiped element body 10 which contains an insulator, a coil 20 which is provided inside the element body 10 and which is wound along a coil axis direction, and a first external electrode 30 and a second external electrode 40 which are electrically connect to the coil 20. The element body 10 has a first end surface 11a and a second end surface 11b which are opposite from each other in a length direction L, a first main surface 12a and a second main surface 12b which are opposite from each other in a height direction T, and a first side surface 13a and a second side surface 13b which are opposite from each other in a width direction W. The first external electrode 30 has a first planar electrode portion 31 which extends in a planar manner along the first main surface 12a so as to be exposed on the element body 10, and a first columnar electrode portion 32 which extends in a columnar manner along a first ridge portion 14a and / or a second ridge portion 14b from the first planar electrode portion 31 so as to be exposed on the element body 10. The second external electrode 40 has a second planar electrode portion 41 which extends in a planar manner along the first main surface 12a so as to be exposed at a distance from the first planar electrode portion 31 on the element body 10, and a second columnar electrode portion 42 which extends in a columnar manner along a third ridge portion 14c and / or a fourth ridge portion 14d from the second planar electrode portion 41 so as to be exposed on the element body 10. When seen from the height direction T, the first planar electrode portion 31 and the second planar electrode portion 41 have a point-symmetrical shape.

The present invention relates to the field of electrophysiological ablation, specifically a catheter capable of performing local ablation, comprising a spherical head and a tube body, wherein the spherical head is connected to the distal end of the tube body, and the spherical head comprises a plurality of support arms, a plurality of outer electrodes, and a plurality of inner electrodes; a hollow portion is provided between the support arms, and the support arms are elastic; the outer electrodes are provided on the support arms, and the outer electrodes are flexible planar electrodes, and the shapes of the flexible planar electrodes are one or more of circular, elliptical, and polygonal; the inner electrodes are provided on the support arms and correspond one to one with the outer electrodes, and the inner electrodes are located on the back of the outer electrodes, and the surface area of ​​the inner electrodes is equal to the surface area of ​​the outer electrodes. The present invention simultaneously realizes multi-pole precision mapping, multi-pole high-efficiency ablation, and single-point local fine ablation in the same catheter, and in the case of multiple ablation electrodes, it can also realize the abutment detection of any single outer electrode.

This application discloses a spatial light modulator, driving method, free-space optical antenna, device, and system, relating to the field of free-space optical communication technology. The spatial light modulator includes a first substrate, a first electrode, a liquid crystal layer, a second electrode, and a second substrate. The first electrode is a planar electrode, and the second electrode includes multiple sub-electrodes spaced apart from each other. The multiple sub-electrodes are arranged sequentially from the inside to the outside around a center. When different driving voltages are applied to the first electrode and the sub-electrodes respectively, the liquid crystal material in the liquid crystal layer flips under the action of the electric field, resulting in different equivalent dielectric constants of the liquid crystal material. This allows the spatial light modulator to adjust the intensity and phase of the incident light beam to modulate different types of light beams, achieving adaptive switching of light beam types. In particular, it can achieve adaptive switching of different types of light beams in a sharp beam, improving anti-turbulence capability and enhancing the stability of the communication link.

The invention discloses a perovskite cell module and a manufacturing method thereof. The cell module comprises a glass substrate, a front electrode, a first charge transport layer, a perovskite light absorption layer, a buffer layer, a second charge transport layer, a back electrode, a packaging layer and back glass which are sequentially stacked. The front electrode is of a composite electrode structure and comprises a first planar electrode layer arranged on the glass substrate in a stacked mode and a plurality of first structured electrodes arranged on the first planar electrode layer in a protruding mode, the first structured electrodes are embedded into the first charge transmission layer, and the first structured electrodes and the first planar electrode layer are made of the same material or different materials; the back electrode is arranged or not arranged to be a composite electrode structure, if the back electrode is of the composite electrode structure, the back electrode comprises a second planar electrode layer and a plurality of second structured electrodes protruding out of the surface of the second planar electrode layer, one end of each second structured electrode is connected to the second planar electrode layer, and the other end of each second structured electrode is embedded into the second charge transmission layer; the packaging adhesive film layer is laminated on the second planar electrode layer.

The invention relates to a composite pane having electrically controllable optical properties, comprising an electrically controllable functional element (10), which has, in a specified sequence, a first carrier film (12), a first planar electrode (14), an active layer (11) or layer sequence having electrically controllable optical properties, a second planar electrode (15) and a second carrier film (13). In the first contact region, the second carrier film (13), the second planar electrode (15) and the active layer (11) or the layer sequence are removed, and the first planar electrode (14) is connected to the bus bar (21) in an electrically conductive manner. In a second contact region, the first carrier membrane (12), the first planar electrode (14) and the active layer (11) or the layer sequence are removed, and the second planar electrode (15) is electrically conductively connected to the at least one collector rail (21; 22.1, 22.2, 22.3) in the first direction. According to the invention, the first contact region and the second contact region are arranged on opposite sides of the functional element (10), and the collector rail (21) of the first planar electrode (14) extends in a connection region from the first contact region to the opposite side of the functional element (10), in which connection region the second carrier film (13), the second planar electrode (15) and the active layer (11) or the layer sequence are removed. An intermediate region is present between the second contact region and the connection region, in which the first carrier film (12), the first planar electrode (14) and the active layer (11) or the layer sequence are not removed, and in which a portion of the second planar electrode (15) adjoining the connection region is electrically insulated from the remainder of the second planar electrode (15) by an insulating wire (16).

A method for controlling a glazing unit having electrically controllable optical properties, wherein the glazing unit includes a composite pane having an outer pane and an inner pane which are connected to one another via a thermoplastic intermediate layer, a functional element is arranged between the outer pane and the inner pane and has an active layer having electrically controllable optical properties between a first planar electrode and a second planar electrode, the optical properties are controlled by a control unit, wherein the control unit is connected to at least two transparent planar electrodes of the functional element, an electrical voltage is applied between the planar electrodes by the control unit, and an inverse function is used to determine a magnitude of the electrical voltage.

An antenna module (100) is provided with a dielectric substrate (130), a flat plate-shaped radiating element (121), a ground electrode (GND) facing a main surface of the radiating element (121), and a flat plate electrode (151). The flat plate electrode (151) is electrically connected to the ground electrode (GND). The radiating element (121) includes a rectangular body portion (1211), and a protruding portion (1212) in a first direction from a side along a second direction of the body portion (1211). A high-frequency signal is supplied to a power supply point (SP1) offset in the first direction from the center of the radiating element (121). An end portion of the radiating element (121) in the first direction has a region (RG1) having the protruding portion (1212) and a region (RG2) not having the protruding portion (1212). When viewed in a plan view from a normal direction of the dielectric substrate (130), the flat plate electrode (151) is disposed at a position in the first direction from the region (RG2) and in the second direction from the protruding portion (1212).

In a resonant device, a first via electrode and a second via electrode connect a first plane electrode and a third plane electrode. A third via electrode and a fourth via electrode connect the first plane electrode and a second plane electrode. When the first plane electrode is seen in plan view in a normal direction of the first plane electrode, a first imaginary line connecting the first via electrode and the second via electrode intersects with a second imaginary line connecting the third via electrode and the fourth via electrode.

The invention discloses a planar electrode structure type chip heat dissipation liquid cooling device based on hydrophilic surface modification and a control method, the heat dissipation liquid cooling device has two structures, one is a heat dissipation liquid cooling device comprising an SPE liquid cooling plate, the specific structure comprises a cover plate, a sealing channel gasket and an SPE liquid cooling plate, the other is a heat dissipation liquid cooling device comprising a DPE liquid cooling plate, and the specific structure comprises a heat dissipation liquid cooling device comprising a DPE liquid cooling plate. The specific structure comprises a cover plate, a sealing gasket, a DPE liquid cooling plate top plate, a sealing channel gasket and a DPE liquid cooling plate bottom plate, and the SPE liquid cooling plate, the DPE liquid cooling plate top plate and the DPE liquid cooling plate bottom plate all comprise interdigital comb electrodes and have hydrophilic surfaces. The heat dissipation device can break through the inherent heat transfer performance limitation of the dielectric fluid, and the electric energy utilization efficiency and the heat dissipation efficiency are improved.

To provide a rotary machine in which a shaft and a housing are electrically connected by a first conductive path provided at one end of the shaft and a second conductive path provided in the housing, and which suppresses wear and torque loss of a contact point between the first conductive path and the second conductive path even when the contact point is located at a position deviated from a rotation center of the shaft.SOLUTION: The first conductive path 40 has flat electrodes 43 extending in the radial direction from the rotation center (on the line CA1) of the shaft 10. The second conduction path 50 includes an attachment portion 51 fixed to the housing 20, a spring portion 52 protruding from the attachment portion 51 toward the planar electrode portion 43 in the axial direction, and a curved electrode portion 53 that is in contact with the planar electrode portion 43 at one point by the spring portion 52 and is supported in a state of being movable on the planar electrode portion 43 in the radial direction.SELECTED DRAWING: Figure 1

An electronic device comprising a chassis receiving a closed-slot antenna comprising a longitudinal port made in and through a side wall of the chassis. The antenna comprises a radio frequency signal injector comprising two substantially parallel flat electrodes, the first electrode resting on a first surface of the longitudinal port and the second electrode resting on a second surface of the longitudinal port. A compression element made of a flexible and elastic material, arranged between the two electrodes, exerts a spreading force on them which presses them against the first and second surfaces of the longitudinal port.

The invention relates to an electronic device and a method thereof. The device includes a target electrode array having a plurality of electrode sites circumferentially arranged along a surface of the device and / or axially arranged along the surface of the device. The device is formed by winding and / or attaching an array of planar electrodes around a carrier.

The invention discloses an MEMS infrared light source based on in-situ confinement growth processing and a preparation method thereof, and the preparation method comprises the steps: cleaning a silicon substrate, and carrying out the deposition of a supporting layer and a back supporting layer on the upper surface and the lower surface of the silicon substrate respectively; processing a heating electrode, a heating plane electrode, a growth electrode and a growth plane electrode on the supporting layer on the upper surface of the silicon substrate; etching the upper surface or the lower surface of the silicon substrate to form a substrate cavity; and growing a metal black radiation layer on the surface of the growth electrode through in-situ confinement growth processing. According to the preparation method, the metal black radiation layer is obtained based on in-situ confinement growth processing, so that the metal black radiation layer and the growth electrode are reliably combined; the surface emissivity and radiation efficiency of the MEMS light source are improved, the processing flow of the light source chip is simplified, and the processing cost of integrated processing of the infrared light source device and the black-body-like coating is greatly reduced.

The invention relates to a method for regulating and controlling the retentivity of a ferroelectric domain wall memory through the size of a device, which comprises the following steps of: epitaxially growing a BiFeO3 film with the thickness of 200nm on a SrTiO3 (001) substrate which is beveled by 2 degrees, ensuring the quality of the film by adopting pulsed laser deposition, and forming a Pt planar electrode structure on the surface of the film through magnetron sputtering, electron beam photoetching and reactive ion etching, the polarization overturning area is controlled by adjusting the electrode gap, the retentivity is tested by combining an I-V curve and a PFM spectrum, and the result shows that when the overturning area is larger than 7 * 10 < 6 > nm < 2 >, the device can keep the polarization state for a long time, and when the area is reduced to 1.3 * 10 < 4 > nm < 2 >, the retentivity disappears. According to the invention, the retention rule of size dependence is defined, the influence of a depolarization field and ferroelastic energy is effectively overcome, and the reliability and information retention time of the memory are remarkably improved.

The invention relates to a resistive random access memory based on ferroelectric domain wall current leading and a preparation method thereof. The method comprises the following steps: epitaxially growing a BiFeOfilm on a [001] SrTiO single crystal substrate which is beveled at 2 degrees in a [100] direction, and inducing to form a periodic stripe domain structure of which a 71-degree domain wall is parallel to a (101) plane by utilizing the limiting characteristic of the beveled substrate; preparing a top electrode by adopting pulse laser deposition or magnetron sputtering; the electron beam lithography technology is used for preparing a nanoscale planar electrode pair structure type device, ultraviolet lithography is used for preparing a capacitance type device with a micron-sized electrode, and good scale dependence and current response characteristics are achieved. By using the electrode deposited by magnetron sputtering, the defect is introduced at the interface, the change of the Schottky barrier in the polarization overturning process is counteracted, the current of the diode can be effectively suppressed, and the real domain wall current is obtained.

The utility model discloses a high-temperature-resistant and high-pressure-resistant industrial planar pH electrode with a diameter structure of 10mm. The high-temperature-resistant and high-pressure-resistant industrial planar pH electrode comprises an electrode shell (1), an electrode inner glass tube (5), a reference electrolyte (2), an open type liquid complexing part (3), a ceramic sand core liquid complexing part (4), a large-diameter flat membrane (6), an electrode inner reference solution (7), an Ag / AgCl reference electrode (8) and a reference system (9), an open liquid complexing part (3) and a ceramic sand core liquid complexing part (4) are arranged at one end of the electrode shell (1) and form a double-liquid complexing part structure, so that the pressure of the electrode is kept balanced in a high-temperature and high-pressure environment; and the large-diameter flat film (6) is fixed at the inner end of the electrode shell (1) and is manufactured by adopting a thick film, and the diameter of the large-diameter flat film (6) is 10mm. The electrode adopts a large-diameter membrane structure, so that the membrane impedance is effectively reduced under the condition that the requirement of measurement on the electrode structure is met.

There is provided a light adjusting structure, a light adjusting module and a light adjusting device, the light adjusting structure includes one or two light adjusting functional layers stacked, each light adjusting functional layer includes functional sub-layers in different regions, first substrates and / or second substrates of the functional sub-layers constitute a full-layer planar substrate, one of first electrodes or second electrodes of the functional sub-layers are disposed at an interval, and the other one of the first electrodes or the second electrodes are disposed at an interval or constitute a full-layer planar electrode; dye liquid crystal layers of the functional sub-layers each include a sealant between the first alignment layer and the second alignment layer, and dye molecules and liquid crystal molecules in a space surrounded by the sealant; sealants of the functional sub-layers are disposed at an interval, and spaces surrounded by the sealants are isolated.

The invention discloses an organic flexible implanted microelectrode array device and method for bidirectional electrophysiological detection and disease diagnosis and treatment of three-dimensional cell spheres, and constructs engineering three-dimensional myocardial cell spheres. An integrated three-dimensional myocardial ball electrophysiological sensing and regulation platform biosensing platform integrated with an organic flexible implantable microelectrode array device is established, a plug-and-play implantable detection strategy is provided, and the space detection limitation of a planar electrode is overcome. Multi-channel electrophysiological signal detection and electrical stimulation regulation in the three-dimensional myocardial cell sphere are realized, and a three-dimensional cell sphere in-situ bidirectional electrophysiological sensing technical method is established.