305 results about "Planar electrode" patented technology

The invention relates to an electrofluid-driven deformable flexible fiber pump and a manufacturing method, the flexible fiber pump comprises a flexible pump body, a three-dimensional electrode module and an external voltage driving control unit, the flexible pump body is made of a thermoplastic plastic material, and the whole flexible pump body is of a hollow tubular structure; the three-dimensional electrode module comprises a polytetrafluoroethylene film and electrodes, and the electrodes comprise a positive electrode and a negative electrode; the polytetrafluoroethylene film is fused with the inner surface of the flexible pump body, the external voltage driving control unit is electrically connected with the positive electrode and the negative electrode, and the manufacturing method mainly comprises the steps of electrode printing, electrode winding and thermoplastic forming. Compared with the prior art, the electrode has the advantages that a planar electrode structure is converted into a three-dimensional structure through winding, so that the integration of the electrode is enhanced, and the application range of the three-dimensional electrode design is widened; and the shapes of the three-dimensional electrode module and the flexible pump body are fixed while heating, so that the electrode can adapt to the change of the shape of the pump, and the flexible deformation capability of the pump is improved.

The invention belongs to the technical field of gas sensor materials, and particularly relates to a novel high-conductivity conjugated coordination polymer gas-sensitive material, an ammonia gas sensor and a preparation method. Copper salt and 1, 5-diamino-4, 8-dihydroxy anthraquinone or 1-amino-4-hydroxy anthraquinone are used as raw materials, two novel high-conductivity conjugated coordination polymer materials are prepared by adopting a simple solvothermal method, and the preparation method is simple in process and can be used for mass production of materials. The obtained material can form a film on planar electrodes at two ends to prepare a resistance-type ammonia gas sensor, so that ammonia gas can be detected in a concentration range of 2.3 ppb-100 ppm, and the defects of narrow detection range and insufficient sensitivity of a single material in the prior art are overcome.

The invention discloses an MEMS infrared light source with a double-sided structure, a preparation method and a packaging device. The infrared light source comprises a silicon substrate, a supporting layer, a heating electrode, an isolating layer, a planar electrode and an infrared radiation material layer, a vertically-through substrate cavity is formed in the silicon substrate, the upper end face and the lower end face of the silicon substrate are covered with the supporting layer, and the outer side face of the supporting layer is covered with the isolation layer; the supporting layer and the isolating layer at the two ends of the cavity of the substrate are suspended to form two suspension islands respectively; the outer side wall of the suspension island extends outwards to form a cantilever beam connected with the side wall of the substrate cavity; infrared radiation material layers are arranged on the outer side surfaces of the suspension islands; and a heating electrode is embedded in the isolation layer in the suspension island and is tightly attached to the supporting layer. According to the infrared light source, the two suspension islands with the infrared radiation material layers are symmetrically arranged at the two ends of the cavity of the substrate, the radiation intensity of the light source is improved through a double-sided structure, the integration degree of the infrared light source is enhanced, and the device size is reduced.

The invention discloses an MEMS infrared light source with a 3D structure and a preparation method thereof, and the preparation method comprises the steps: cleaning a silicon substrate, depositing supporting layers on the upper surface and the lower surface of the silicon substrate respectively, processing a heating electrode on the supporting layer on the upper surface, and processing to obtain an isolation layer covering the heating electrode and the supporting layer; an infrared radiation material layer is processed in the middle area of the isolation layer, and planar electrodes communicated with the heating electrode are processed on the two sides of the infrared radiation material layer; etching and windowing are carried out on the middle area of the supporting layer on the lower surface of the silicon substrate to form a substrate cavity, etching and windowing are carried out on the supporting layer on the peripheral area of the substrate cavity to form an etching window, substrate body silicon secondary etching is carried out on the lower surface of the silicon substrate to form a communicating cavity, and therefore the MEMS infrared light source with the 3D structure is obtained. According to the preparation method, the communication cavity beneficial to ventilation is formed by etching below the infrared light source through secondary etching, so that the reliability and the stability of high-temperature radiation of the infrared light source are improved.

The invention relates to the technical field of semiconductor gas sensors for gas detection, in particular to an in-situ construction method and application of a gas sensor for volatile aroma substance detection, and the in-situ construction method comprises the following steps: mixing an aqueous solution of zinc nitrate hexahydrate and an aqueous solution of 2-methylimidazole according to different molar ratios to obtain a precursor solution; upwards fixing a planar electrode on the surface of a glass slide, and then transferring the planar electrode into the precursor solution; carrying out hydrothermal reaction on the precursor solution at 90 DEG C for 4 hours, after the hydrothermal reaction is finished, cooling to normal temperature, taking out the glass slide, washing the surface of an electrode by using deionized water, removing impurities, and then carrying out drying treatment; calcining the obtained dried electrode in an air atmosphere at 500 DEG C for 2 hours to construct an in-situ growth semiconductor sensor; according to the present invention, the rapid sensing response on nine volatile aroma substances is achieved, and the excellent gas sensitive characteristic is represented in the gas sensitive research on the volatile substance ocimene in the volatile aroma substances.

An acoustic wave device includes a piezoelectric substrate including first and second main surfaces, a mounting substrate including third and fourth main surfaces, a functional electrode on the first main surface to perform electromechanical conversion with the piezoelectric substrate, first and second plane electrodes on the first main surface and connected to the functional electrode, and a third plane electrode on the first main surface and in contact with an end side of the piezoelectric substrate, and not connected to the functional electrode and the plane electrode, and bump electrodes bonded to the first and third main surfaces. A maximum distance D13max between two end portions of the third plane electrode is smaller than a minimum distance D1min of distances between two of the first and second plane electrodes having different potentials from each other.

An LC resonator includes first and second plane electrodes, a first line electrode, a first and second via conductors, and a third plane electrode. The second plane electrode is opposed to at least a portion of the first plane electrode in a specific direction. The first via conductor and the second via conductor extend from the first line electrode in the specific direction to be connected to the first plane electrode and the second plane electrode, respectively. The third plane electrode is opposed to at least a portion of the second plane electrode in the specific direction. The second plane electrode is between the first plane electrode and the third plane electrode in the specific direction.

The invention discloses a stannic oxide-based ammonia gas sensor as well as a preparation method and application thereof, relates to the technical field of gas sensors, and solves the problems of high detection lower limit, poor gas selectivity and low sensitivity of a traditional semiconductor ammonia gas sensor. A sensitive material based on oxygen vacancy regulation and control SnO2 / ZIF-67 is prepared on the surface of an interdigital gold electrode by adopting a chemical vapor deposition method, a planar electrode, an aluminum oxide ceramic substrate, a heater and a Pt wire are welded and packaged according to a general indirectly-heated gas sensitive element, and the SnO2 / ZIF-67 semiconductor ammonia gas sensor is prepared. The lower detection limit of the SnO2 / ZIF-67 semiconductor ammonia gas sensor is 1 ppm; meanwhile, the NH3 selectivity and sensitivity of the sensor are improved through the synergistic effect of SnO2 and ZIF-67, and the sensor can be used for detecting ammonia gas leakage and can be applied to judging the safety of ammonia gas in chemical production operation, environmental gas detection and other applications.

The invention discloses a multi-parameter micro-nano sensing chip for detecting a neural network. The multi-parameter micro-nano sensing chip comprises an ECIS interdigital electrode, an MEA multi-channel planar electrode, an electrochemical SWNT film array and a microfluidic structure. Three-dimensional heterogeneous integration is achieved through vertical stacking and partition cooperation, an ECIS interdigital electrode and an MEA chip share a plane base, an electrode layer is isolated through a nanoscale insulating layer, electrical signal crosstalk is avoided, meanwhile, the space of the chip is utilized to the maximum extent, meanwhile, a micro-fluidic cavity is divided into three corresponding detection areas, and the detection accuracy of the micro-fluidic cavity is improved. Therefore, signal detection of the in-vitro neural network in different states can be completed. According to the invention, multi-mode signal detection can be carried out on the neural network cultured by the same iPSCs neuron, and the ECIS interdigital electrode, the MEA multi-channel planar electrode and the electrochemical SWNT thin film array are combined together by using the micro-fluidic chip, so that the problems of single function, data splitting, insufficient sensitivity, difficulty in long-term stability and the like of the traditional neural chip are solved.

The invention discloses a flexible electrode based on liquid metal and a preparation method thereof. The method comprises the following steps: preparing a suspension containing the liquid metal and a solid conductive material; adding a polymer solution; spraying on a substrate through ultrasonic waves; wherein the melting point of the liquid metal is less than or equal to 50 DEG C. The flexible electrode provided by the invention has stretchability, and can realize relatively high conductivity under the condition of relatively low content of liquid metal. In addition, the electrode has the advantages of environment-friendly recovery, low liquid leakage risk, multiple kinetic energy, self-healing and the like. The preparation method provided by the invention can be used for preparing a planar electrode and a curved electrode, and is applied to a flexible capacitive sensor for monitoring stress, strain and non-contact fluid flow.

The invention relates to a planar electrode, a preparation method thereof and a supercapacitor. The preparation method of the planar electrode comprises the following steps: mixing a graphene oxide sheet and a nitrogen source compound in a solvent to obtain an electrode precursor solution; removing a solvent in the electrode precursor solution and depositing an electrode precursor mixture on a substrate to form an electrode precursor film; the thickness of the electrode precursor film is 8 [mu] m-20 [mu] m; performing non-contact heating on the electrode precursor film; in the non-contact heating, the temperature of a heating source is 350-600 DEG C, and the heating time is 4-10 seconds; the vertical distance between the heating surface of the heating source and the electrode precursor film is 0.2 cm to 1 cm. According to the preparation method, the planar electrode preparation time can be remarkably shortened, the production time cost is saved, and the production efficiency of planar electrode products is improved.

The invention relates to the technical field of fruit picking, and particularly provides a bimodal touch sensor, a fruit picking system and a picking robot. The lower electrode layer is fixed at the top of the base and comprises a first planar electrode and a plurality of first extension electrodes; the upper electrode layer comprises a second planar electrode and a plurality of second extension electrodes, the second extension electrodes are arranged above the first extension electrodes, and the number of the second extension electrodes is consistent with that of the first extension electrodes; the piezoresistive sensor is arranged between the first planar electrode and the second planar electrode; a plurality of triboelectric sensors which are arranged above the base in a circumferential array and are arranged between the first extension electrode and the second extension electrode; the flexible shell is connected with the top of the upper electrode layer; the sensor can effectively solve the problem that the reliability of the obtained dynamic information and the grabbing force is insufficient due to the fact that the dynamic information representing the fruit maturity and the grabbing force applied to the fruit cannot be detected at the same grabbing position point.

The invention provides a planar electrode for spinal cord electrical stimulation and a preparation method thereof, and belongs to the technical field of medical instruments, and specifically, the planar electrode comprises a flexible substrate, electrode stimulation points, a conductive circuit, a bonding pad and a flexible insulating layer; a modification layer is deposited on the upper surface of the electrode stimulation point, the modification layer forms a grass-shaped morphology with forest leaves, and the modification layer is a platinum layer or a platinum-iridium alloy layer. A platinum layer or a platinum-iridium alloy layer is adopted as a modification layer, the effect of reducing impedance can be achieved, compared with a traditional plane morphology, the grass-shaped morphology with the forest blades can greatly increase the contact area between a film layer and tissue, the impedance is effectively reduced, dissipation of current on an electrode and a biological tissue interface can be reduced through the low impedance, and the service life of the electrode and the biological tissue interface is prolonged. Charge injection efficiency is improved, heating is reduced, tissue thermal damage is avoided, meanwhile, the platinum-iridium alloy material is reversible in chemical reaction in the electrical stimulation process, and toxic substances or material loss caused by the reaction cannot be generated.

The utility model provides a connecting device, which is suitable for connecting a first circuit board and a second circuit board and comprises a first connecting piece and a second connecting piece, a plurality of contact pins, each contact pin is arranged on the first connecting piece, and the first end of each contact pin is electrically connected with the first connecting piece; wherein the plurality of contact pins and the plurality of planar electrodes on the second circuit board are arranged in a one-to-one correspondence manner, and the second circuit board is pressed on the plurality of contact pins, so that the second end of each contact pin is abutted against the corresponding planar electrode, and the second circuit board is electrically connected with the first connecting piece. According to the utility model, the problem of low replacement efficiency of a movable circuit board in the prior art is solved.

An antenna module includes a dielectric substrate, a ground electrode in the dielectric substrate, planar radiating elements, and a peripheral electrode. One radiating element faces the ground electrode. Another radiating element is between the one radiating element and the ground electrode. The peripheral electrode is in a layer of the dielectric substrate between the ground electrode and the other radiating element and electrically connects to the ground electrode. The other radiating element emits a radio wave in a frequency band lower than a frequency band of a radio wave emitted by the one radiating element. The peripheral electrode includes multiple planar electrodes stacked in a first direction in which the one radiating element faces the ground electrode. One planar electrode is in a layer between another planar electrode and the ground electrode. The size of the other planar electrode is less than the size of the one planar electrode.

An electrostatic ion trap or array of electrostatic ion traps having a longitudinal length of no more than 10 mm and / or at least one electrode with a ground capacitance of no more than 1 pF is provided. A first set of planar electrodes and a second set of planar electrodes can be distributed along a longitudinal axis, at least some of the first set of planar electrodes and the second set of planar electrodes being configured to receive an electrostatic potential, and a second set of planar electrodes for confining ions received in a space between the first set of planar electrodes and the second set of planar electrodes. The array can include an inlet for receiving an ion beam, the inlet configured such that a portion of the ion beam can be trapped in each of the ion traps. Signals indicative of ion mass and charge data can be obtained from a plurality of electrostatic ion traps in the array. The mass and charge data can be combined for identifying a composition of a mixture of different analyte ions.

An electrode-stacking wheel designed to receive and convey planar electrode elements, includes: a spindle designed for the rotating of the electrode-stacking wheel; a plurality of stacking fingers, which are radial to the spindle and which are arranged circumferentially around the axis of rotation; a plurality of intermediate spaces, which are formed between the respective stacking fingers, each intermediate space being designed to receive at least one of the electrode elements; and an electrode-clamping element formed in each of the intermediate spaces, each electrode-clamping element being designed such that, in the clamping state, the electrode-clamping element applies clamping force to a main surface of one of the electrode elements and presses the electrode element in question against the stacking finger in question by means of the force application.

The present invention discloses a high-sensitivity and shock-resistant microhemispherical gyroscope electrode structure and manufacturing method. The electrode structure is divided into upper and lower layers. The lower layer is a planar electrode, and the upper layer is a special-shaped planar electrode fabricated by a process method, presenting an overall shape of a combination of a circular hole and a circular groove. Both the upper and lower layer electrodes are sensitive to the out-of-plane motion of the edge of the sensitive resonator housing. The method includes realizing the patterning of the electrode by means of coating and photolithography processes on a wafer to obtain the lower electrode; fixing the prepared resonator housing to the lower electrode through precision microassembly; manufacturing the shape of the upper electrode on the wafer by etching or microfabrication processes, and realizing the patterning of the corresponding area of the upper electrode through processes such as coating, spraying glue, and multiple photolithographies; and assembling and fixing the upper electrode to the lower electrode with the resonator housing fixed by using a jig. The electrode form in the present invention improves the sensitivity of the microhemispherical gyroscope, and at the same time can limit the motion of the resonator housing, thereby enhancing the environmental adaptability of the gyroscope.

The invention relates to the field of electrophysiological ablation, in particular to a catheter capable of performing local ablation, which comprises a spherical head end and a catheter body, the spherical head end is connected to the far end of the catheter body, and the spherical head end comprises a plurality of supporting arms, a plurality of outer side electrodes and a plurality of inner side electrodes; a hollow part is arranged between the supporting arms, and the supporting arms are elastic; the outer side electrode is arranged on the supporting arm, the outer side electrode is a flexible planar electrode, and the shape of the flexible planar electrode is one or more of a circle, an oval and a polygon; the inner side electrodes are arranged on the supporting arms, correspond to the outer side electrodes one by one and are located on the back faces of the outer side electrodes, and the surface area of the inner side electrodes is equal to that of the outer side electrodes. Multi-pole precise mapping, multi-pole high-efficiency ablation and single-point local fine ablation are achieved on the same catheter at the same time, and meanwhile attachment detection of any single outer side electrode can be achieved under the condition of a plurality of ablation electrodes.

The invention relates to the technical field of ultrasonic transducers, and discloses a flexible wearable ultrasonic three-dimensional array and device.The flexible wearable ultrasonic three-dimensional array comprises a transducer array composed of a plurality of transducer units, the transducer units are divided into a plurality of subareas, all the transducer units in each subarea are connected, and the transducer units are arranged in the subareas; the upper plane electrodes of the transducer units in different partitions are not connected, and the lower plane electrodes are connected and then are in common ground; each cross-layer lead unit corresponds to the transducer unit of the corresponding partition, the thickness of each cross-layer lead unit is the same as that of the transducer unit, and each cross-layer lead unit is connected with the upper plane electrode of the transducer unit of the corresponding partition, so that the upper plane electrode and the lower plane electrode are located on the same two-dimensional plane; according to the flexible substrate surface-mounted ultrasonic array, the transmission control of the transducer unit of each subarea is carried out in a two-dimensional plane, and the problems that an existing flexible substrate surface-mounted ultrasonic array connection process is complex in structure and high in cost, and the connection cost is high when the flexible substrate surface-mounted ultrasonic array is connected with a peripheral circuit, so that the clinical large-scale batch processing requirement of the flexible substrate surface-mounted ultrasonic array is difficult to meet are solved.

The invention relates to the technical field of tea aroma detection, in particular to a noble metal-sensitized volatile aroma substance sensor construction and detection method, which comprises the following steps: dissolving zinc acetate dihydrate, urea and trisodium citrate dihydrate in deionized water to obtain a mixed precursor solution; controlling the hydrothermal reaction of the precursor solution; after naturally cooling to room temperature, washing, centrifuging, drying and calcining to obtain a zinc oxide material; the preparation method comprises the following steps: impregnating a zinc oxide material with deionized water, adding an ammonium carbonate solution while stirring, stirring, and then adding a noble metal solution to obtain a noble metal modified zinc oxide mixed solution; centrifuging, drying and calcining to obtain a powder zinc oxide loaded noble metal material; dissolving the zinc oxide loaded noble metal material in ethanol, performing ultrasonic treatment to form turbid liquid, and further dispensing the turbid liquid to the surface of a planar electrode to construct a semiconductor sensor for detecting tea aroma; the sensor prepared by the method has excellent sensing characteristics of high sensitivity, high stability and the like on tea aroma.

The present invention is directed to a multilayer capacitor, a circuit board containing the multilayer capacitor, and an integrated circuit package containing the multilayer capacitor. A multilayer capacitor includes a body containing alternating dielectric layers and internal electrode layers that each include a first electrode and a second, co-planar electrode, the first electrode having a main body with at least one lead tab extending from each of a top edge and a bottom edge thereof. The capacitor also includes a first external terminal and a second external terminal that each wrap from a top surface, along an end surface, to a bottom surface. The first external terminal is electrically connected to the first electrode of the first internal electrode layers along its lead tab leading edges, and the second external terminal is electrically connected to the first electrode of the second internal electrode layers along its lead tab leading edges.

The invention provides an elastic wave device and a multiplexer, which suppress deterioration of passing characteristics. A filter (20) is provided with a series arm resonator (s21), parallel arm resonators (p21 to p24), a laminated substrate (40) having main surfaces (40a and 40b), a piezoelectric substrate (50), and a bump electrode (70 (121)) disposed on the main surface (50a), the parallel arm resonator (p21) including an IDT electrode disposed on the main surface (50a), the bump electrode being connected to the IDT electrode, and the piezoelectric substrate (50) being disposed on the main surface (50a). The laminated substrate has a planar electrode (410) disposed on the main surface (40a) and joined to the bump electrode, a planar electrode (440) disposed on the main surface (40b) and connected to the ground, and a plurality of via conductors (81) connecting the planar electrode (410) and the planar electrode (440), the bump electrode being located between the via conductors (81a, 81b) connected to the planar electrode (410) in a plan view of the main surface (40a), and the bump electrode being located between the via conductors (81a, 81b) connected to the planar electrode (410) in a plan view of the main surface (40a) in a plan view of the main surface (40a). The parallel arm resonator (p21) has the highest resonance frequency among the plurality of parallel arm resonators (p21 to p24).

Techniques for forming one or more MIM trench capacitors over one or more planar MIM capacitors in an interconnect region above or below a device layer of an integrated circuit. The MIM trench capacitor(s) is in one or more interconnect layers of the interconnect region, and can have a relatively high height. The MIM trench capacitor includes a first electrode, a capacitor dielectric on the first electrode, and a second electrode on the capacitor dielectric, and runs along the outside surface of a plurality of dielectric fins, which increases the surface area of the capacitor within a relatively small plan footprint. A planar MIM capacitor is beneath the MIM trench capacitor within a same interconnect layer as the MIM trench capacitor. The planar MIM capacitor includes first and second planar electrodes separated by a capacitor dielectric, and may be electrically isolated from, or capacitively coupled to, the MIM trench capacitor.

An optical device includes first and second planar substrates having respective first and second faces and including first and second diffractive structure disposed respectively on the first and second faces. First and second planar electrodes are disposed respectively on the first and second faces. A mount holds the second planar substrate parallel to the first planar substrate, with the second face adjacent to the first face and with the first and second planar electrodes in mutual proximity, while permitting the second planar substrate to move transversely relative to the first planar substrate. A control circuit is coupled to apply an electrical potential between the first and second planar electrodes with a voltage sufficient to shift the second diffractive structure transversely relative to the first diffractive structure.

Disclosed are a method for producing an electrode for a galvanic cell, an electrode for a galvanic cell, a galvanic cell, and uses of the galvanic cell. The method comprises: applying a separator membrane to a planar electrode such that an intermediate space is formed between the planar electrode and the separator membrane; subsequently applying a liquid comprising a particular material to the separator membrane, wherein the liquid comprising material penetrates, by way of capillary forces, at least into the pores of the separator membrane, into the intermediate space between the planar electrode and the separator membrane and into pores of the planar electrode, wherein the liquid is subsequently evaporated. The method makes it easily and inexpensively possible to provide an electrode which exhibits a high energy density at the cell level and high chemical, electrochemical and mechanical stability, exhibits high cycle stability and allows high operating currents.

The present invention discloses a Cu-BTC single crystal resistive humidity sensor and a preparation method, belonging to the field of MOFs material sensing. The Cu-BTC single crystal resistive humidity sensor of the present invention comprises a planar interdigitated electrode produced by ultrafast laser-induced processing of the Cu-BTC single crystal surface and unprocessed Cu-BTC single crystal material between the interdigitated fingers. The planar electrode is prepared by the following steps: S1: preparing a Cu-BTC single crystal sample with a length and width of the to-be-processed surface greater than or equal to 100 μm; S2: using an ultrafast laser processing device to perform ultrafast laser-induced processing on the Cu-BTC single crystal sample in step S1 under set laser processing parameters to obtain the planar interdigitated electrode; wherein the ultrafast laser wavelength is 1030 nm, the pulse width t is 1.2 ps≤t≤10 ps, ​​the processing power P is 3 mW≤P≤8 mW, the scanning speed v is 200 μm / s≤v≤360 μm / s, the processing interval is 1 μm, and the focused spot is 4 μm. The Cu-BTC single crystal resistive humidity sensor can detect humidity in the range of 5% to 90% RH, with a response time of up to 2 s and good selectivity, stability, and cyclability.

The present invention improves the insertion loss of a resonant element. In the resonant element (10), a first via electrode (111) and a second via electrode (112) connect a first planar electrode (101) and a third planar electrode (103). A third via electrode (113) and a fourth via electrode (114) connect the first planar electrode (101) and a second planar electrode (102). When the first planar electrode (101) is viewed from the normal direction (Z) of the first planar electrode (101), a first imaginary line (VL11) connecting the first via electrode (111) and the second via electrode (112) and a second imaginary line (VL12) connecting the third via electrode (113) and the fourth via electrode (114) cross.

The invention relates to a method for preparing a lenticular lens on a conductive surface of a transparent support, the method comprising imprinting a curable resin on the support with a lenticular mold, followed by curing the resin and removing the mold to yield a lenticular device comprising the transparent support and a lenticular lens provided thereon. A small part of the curable resin comprises conductive particles, which after curing provide the lenticular lens with a conductive path between the conductive support surface and the lenticular lens surface. The conductive support surface is in this way easily and directly electrically accessible as a planar electrode, when the lenticular device is incorporated in an electrically switchable liquid crystal cell. Accordingly, the invention further relates to such lenticular device, to a liquid crystal cell comprising such lenticular device, and to an autostereoscopic display device comprising such liquid crystal cell.

The invention discloses a system for continuously preparing graphene through an electrochemical stripping method. The system comprises a stripping assembly, a separating and collecting assembly and a continuous material supplementing assembly. The stripping assembly comprises an electrolytic tank, a graphite electrode device and a counter electrode device, electrolyte is contained in the electrolytic tank, the graphite electrode device and the counter electrode device are both immersed in the electrolyte, the graphite electrode device is coaxially arranged in the counter electrode device, the graphite electrode device is connected with the positive electrode of the direct-current power source through a positive wire, and the counter electrode device is connected with the negative electrode of the direct-current power source through a negative wire. The counter electrode device is connected with the cathode of the direct-current power supply through a cathode wire; and the continuous material supplementing assembly is communicated with the electrolytic tank through a material supplementing pipeline. The invention further discloses a method for continuously preparing the graphene through the electrochemical stripping method. The device has the beneficial effects that the graphite electrode device and the counter electrode device are coaxially arranged inside and outside to form an annular electrode structure, so that the electric field edge effect of a planar electrode is avoided, the electric field distribution is more uniform, and the intercalation and stripping efficiency between graphite layers is further improved.