516 results about "Planar electrode" patented technology

Electrosurgical methods and apparatus for the controlled ablation of tissue from a target site of a patient. The instrument includes a shaft having proximal and distal end portion and a planar active electrode on the distal end portion; a return electrode arranged on the shaft spaced from the active electrode; at least one electrical connector extending through the shaft that connects the active electrode with a high frequency power supply; and an aspiration lumen within the shaft having a distal opening. The active electrode is arranged vertically or perpendicular to the tissue treatment surface. The planar electrode may include one or more apertures.

The film acoustically-coupled transformer (FACT) has a first and second decoupled stacked bulk acoustic resonators (DSBARs). Each DSBAR has a lower film bulk acoustic resonator (FBAR), an upper FBAR atop the lower FBAR, and an acoustic decoupler between them FBARs. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. A first electrical circuit interconnects the lowers FBAR of the first DSBAR and the second DSBAR. A second electrical circuit interconnects the upper FBARs of the first DSBAR and the second DSBAR. In at least one of the DSBARs, the acoustic decoupler and one electrode of the each of the lower FBAR and the upper FBAR adjacent the acoustic decoupler constitute a parasitic capacitor. The FACT additionally has an inductor electrically connected in parallel with the parasitic capacitor. The inductor increases the common-mode rejection ratio of the FACT.

The band-pass filter has a stacked pair of film bulk acoustic resonators (FBARs) and an acoustic decoupler between the FBARs. Each of the FBARs has opposed planar electrodes and a layer of piezoelectric material between the electrodes. The acoustic decoupler has a single layer of acoustic decoupling material having a nominal thickness equal to an odd integral multiple of one quarter of the wavelength in the acoustic decoupling material of an acoustic wave having a frequency equal to the center frequency. The acoustic decoupling material comprises plastic. The acoustic decoupler controls the coupling of acoustic energy between the FBARs. Specifically, the acoustic decoupler couples less acoustic energy between the FBARs than would be coupled by direct contact between the FBARs. The reduced acoustic coupling gives the band-pass filter desirable in-band and out-of-band properties.

A MEMS scanning device includes more than one type of actuation. In one approach capacitive and magnetic drives combine to move a portion of the device along a common path. In one such structure, the capacitive drive comes from interleaved combs. In another approach, a comb drive combines with a pair of planar electrodes to produce rotation of a central body relative to a substrate. In an optical scanning application, the central body is a mirror. In a biaxial structure, a gimbal ring carries the central body. The gimbal ring may be driven by more than one type of actuation to produce motion about an axis orthogonal to that of the central body. In another aspect, a MEMS scanning device is constructed with a reduced footprint.

The band-pass filter has a stacked pair of film bulk acoustic resonators (FBARs) and an acoustic decoupler between the FBARs. Each of the FBARs has opposed planar electrodes and a layer of piezoelectric material between the electrodes. The acoustic decoupler controls the coupling of acoustic energy between the FBARs. Specifically, the acoustic decoupler couples less acoustic energy between the FBARs than would be coupled by direct contact between the FBARs. The reduced acoustic coupling gives the band-pass filter desirable in-band and out-of-band properties.

One embodiment of the film acoustically-coupled transformer (FACT) includes a decoupled stacked bulk acoustic resonator (DSBAR) having a lower film bulk acoustic resonator (FBAR) an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each FBAR has opposed planar electrodes with a piezoelectric element between them. The FACT additionally has first terminals electrically connected to the electrodes of one FBAR and second terminals electrically connected to the electrodes of the other FBAR. Another embodiment has decoupled stacked bulk acoustic resonators (DSBARs), each as described above, a first electrical circuit interconnecting the lower FBARs, and a second electrical circuit interconnecting the upper FBARs. The FACT provides impedance transformation, can linking single-ended circuitry with balanced circuitry or vice versa and electrically isolates primary and secondary. Some embodiments are additionally electrically balanced.

The decoupled stacked bulk acoustic resonator (DSBAR) device has a lower film bulk acoustic resonator (FBAR), an upper FBAR stacked on the lower FBAR, and an acoustic decoupler between the FBARs. Each of the FBARs has opposed planar electrodes and a layer of piezoelectric material between the electrodes. The acoustic decoupler has acoustic decoupling layers of acoustic decoupling materials having different acoustic impedances. The acoustic impedances and thicknesses of the acoustic decoupling layers determine the acoustic impedance of the acoustic decoupler, and, hence, the pass bandwidth of the DSBAR device. Process-compatible acoustic decoupling materials can then be used to make acoustic decouplers with acoustic impedances (and pass bandwidths) that are not otherwise obtainable due to the lack of process-compatible acoustic decoupling materials with such acoustic impedances.

The present invention relates to a novel thermal-sensitive resistive apparatus, such as PTC and NTC, which allocates planar electrode films on the top and bottom surfaces of a prior art thermal-sensitive resistive apparatus, such as a PTC apparatus, to laminate with an outer electrode layer. A plurality of interconnection vias are electroplated with conductive material to connect to any plane. It is convenient to surface mount the apparatus of the present invention on a printed circuit board. The present invention can largely increase the dimensional stability of components and overcome the disadvantage that thermal diffusion of the prior are surface mounted resistive apparatus is affected easily by line width and environments.

The band-pass filter has first terminals, second terminals, a first decoupled stacked bulk acoustic resonator (DSBAR), a second DSBAR, and an electrical circuit connecting the first DSBAR and the second DSBAR in series between the first terminals and the second terminals. Each DSBAR has a first film bulk acoustic resonator (FBAR), a second FBAR and an acoustic decoupler between the FBARs. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes.

The band-pass filter has an upper film bulk acoustic resonator (FBAR), an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each of the FBARs has opposed planar electrodes and a piezoelectric element between the electrodes. The acoustic decoupler controls the coupling of acoustic energy between the FBARs. Specifically, the acoustic decoupler couples less acoustic energy between the FBARs than would be coupled by direct contact between the FBARs. The reduced acoustic coupling gives the band-pass filter desirable in-band and out-of-band properties.

The film acoustically-coupled transformer (FACT) has decoupled stacked bulk acoustic resonators (DSBARs), a first electrical circuit and a second electrical circuit. Each of the DSBARs has a lower film bulk acoustic resonator (FBAR), an upper FBAR and an acoustic decoupler. The upper FBAR is stacked on the lower FBAR and the acoustic decoupler is located between the FBARs. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. The first electrical circuit interconnects the lower FBARs. The second electrical circuit interconnects the upper FBARs. The FBARs of one of the DSBARs differ in electrical impedance from the FBARs of another of the DSBARs. The FACT has an impedance transformation ratio greater than 1:m2, where m is the number of DSBARs. The actual impedance transformation ratio depends on the ratio of the impedances of the FBARs.

Embodiments of an acoustically-coupled transformer have a first stacked bulk acoustic resonator (SBAR) and a second SBAR. Each of the SBARs has a lower film bulk acoustic resonator (FBAR) and an upper FBAR, and an acoustic decoupler between the FBARs. The upper FBAR is stacked atop the lower FBAR. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element is characterized by a c-axis. The c-axes of the piezoelectric elements of the lower FBARs are opposite in direction, and the c-axes of the piezoelectric elements of the upper FBARs are opposite in direction. The transformer additionally has a first electrical circuit connecting the lower FBAR of the first SBAR to the lower FBAR of the second SBAR, and a second electrical circuit connecting the upper FBAR of the first SBAR to the upper FBARs of the second SBAR.

A new class of microwires and a method for their assembly from suspensions of metallic nanoparticles in water under the influence of dielectrophoretic forces. The wires are formed in the gaps between planar electrodes in an alternating current (AC), allowing manipulation of the particles without the interference of electro-osmotic and electro-chemical effects resent in direct current (DC) systems. The structures created cover a new size domain of microwires of micrometer diameter and millimeter to centimeter length, closing the gap between tradition metallic wires and the more recently synthesized nanowires and carbon tubes. The wires have good Ohmic conductance and their thickness, conductivity, and fractal dimension can be controlled by varying the frequency and voltage of the applied field. The formation of such self-assembled structures can be used in miniaturization of electrical circuits for application in sensors, memory elements, and wet electronic circuits, such as electrically readable bioarrays and biological-electronic interfaces.

An embodiment of the acoustically-coupled transformer has first and second stacked bulk acoustic resonators (SBARs) each having a stacked pair of film bulk acoustic resonators (FBARs) with an acoustic decoupler between the FBARs. Each FBAR has opposed planar electrodes with piezoelectric material between the electrodes. A first electrical circuit connects one FBARs of the first SBAR to one FBAR of the second SBAR, and a second electrical circuit connects the other FBAR of the first SBAR to the other FBAR of the second SBAR. The c-axis of the piezoelectric material of one of the FBARs is opposite in direction to the c-axes of the piezoelectric materials of the other three FBARs. This arrangement substantially reduces the amplitude of signal-frequency voltages across the acoustic decouplers and significantly improves the common mode rejection of the transformer. This arrangement also allows conductive acoustic decouplers to be used, increasing the available choice of acoustic decoupler materials.

The invention discloses an annular tubular electrode ion trap used for ion storing and analyzing device, correlating to technology of ion storage and ion mass analysis, especially relates to ion storage and an analysis instrument for analyzing and detecting based on mass-to-charge ratio characteristics of the ion. The annular tubular electrode ion trap has an ion lead-in hole and an ion lead-out hole, two or more annular tubular electrodes of different diameters are assembled together coaxially to compose a set of coaxial annular tubular electrodes, an annular space is formed between two adjacent rings, two plane electrodes are vertical to an axis and are respectively provided on two ends of the annular tubular electrode, boundary electrodes of the ion trap are composed of outer annular tubular electrodes and plane electrodes on two ends, an ion binding area is formed between the adjacent annular tubular electrodes, ions leaded in the area are to be captured, stored or discharged selectively.

A MEMS scanning device includes more than one type of actuation. In one approach capacitive and magnetic drives combine to move a portion of the device along a common path. In one such structure, the capacitive drive comes from interleaved combs. In another approach, a comb drive combines with a pair of planar electrodes to produce rotation of a central body relative to a substrate. In an optical scanning application, the central body is a mirror. In a biaxial structure, a gimbal ring carries the central body. The gimbal ring may be driven by more than one type of actuation to produce motion about an axis orthogonal to that of the central body. In another aspect, a MEMS scanning device is constructed with a reduced footprint.

A photoelectric conversion device includes a semiconductor substrate, an insulating layer provided on the semiconductor substrate, an electrode provided on the insulating layer, a photoelectric conversion film provided on the electrode for converting received light to charges, a line connected between the electrode and the semiconductor substrate, a first planar electrode provided in the insulating layer and connected to the electrode, and a second planar electrode provided in the insulating layer between the first planar electrode and the semiconductor substrate.

A dielectric barrier discharge apparatus for treating a substrate includes a first planar electrode; a dielectric layer disposed on a surface of the first planar electrode; a porous planar electrode spaced above and in a parallel plane with the dielectric layer, wherein the porous planar electrode has a geometric transmission factor greater than 70 percent; and a power supply in electrical communication with the first electrode and the second electrode. A process for treating a substrate includes exposing the substrate surface to reactants produced by the dielectric barrier discharge apparatus.

A micro angular rate-sensing device is provided. A vibrator, having a plurality of proof masses connected to a ring, is arranged in a first base. Flexible supporting members connect to the vibrator to suspend the vibrator in the first base. Electrodes drive the vibrator to oscillate and control the oscillation mode of the vibrator in driving mode. Planar electrodes are arranged relative to the proof masses on a second base. The motion of the proof masses relative to the planar electrodes is sensed through the capacitance between the proof masses and the planar electrodes. The resonant structure with greater mass of the device generates greater Coriolis force and increases the sensing area. Thus, the intensity of sensed signals and noise-signal ratio are greatly increased. Furthermore, the device does not rely much on high aspect ratio manufacturing technology. Thus the manufacturing cost is reduced and the yield rate is increased.

A cell potential measurement apparatus, which uses a planar electrode enabling a multi-point simultaneous measurement of potential change arising from cell activities, is provided which can conduct measurements accurately and efficiently as well as can improve convenience of arranging measurement results. According to the configuration of the cell potential measurement apparatus of this invention, it includes an integrated cell holding instrument 1, which includes a planar electrode provided with a plurality of microelectrodes arranged in a matrix form on the surface of a substrate, a cell holding part for placing cells thereon, drawer patterns from the microelectrodes, and electric contact points for outside connections; an optical observation means 20 for optical observations of cells; a stimulation signal supply means 30 to be connected to the cell holding instrument for providing electric stimulation to the cells; and a signal processing means 30 to be connected to the cell holding instrument for processing an output signal arising from electric physiological activities of the cells. It is preferable that a cell culturing means 40 is also provided for maintaining a culture atmosphere of the cells placed on the integrated cell holding instrument.

A method of separating particulate materials of different properties has been developed. It consists of feeding a mixture of dry, powdered materials to one end of the surface of a planar electrode, which is vibrating to move the particles forward. At least one type of the particulate materials acquires a charge via conduction or triboelectrification. Those particles that acquire charges of the same sign as that of the planar electrode are lifted and collected at the V-shaped counter electrodes installed above. The new separation method is particularly useful for removing unburned carbons from fly ash and any other conducting materials from nonconducting ones.

An atmospheric pressure plasma assembly (1) comprising a first and second pair of vertically arrayed, parallel spaced-apart planar electrodes (36) with at least one dielectric plate (31) between said first pair, adjacent one electrode and at least one dielectric plate (31) between said second pair adjacent one electrode, the spacing between the dielectric plate and the other dielectric plate or electrode of each of the first and second pairs of electrodes forming a first and second plasma regions (25,60) characterised in that the assembly further comprises a means of transporting a substrate (70,71,72) successively through said first and second plasma regions (25,60) and an atomiser (74) adapted to introduce an atomised liquid or solid coating making material into one of said first or second plasma regions.

A ceramic board is formed in an almost rectangular shape and has one side surface of an outer peripheral surface formed as an abutting surface, which is caused to abut on positioning surfaces of a radiating member, and one surface in a vertical direction formed as a device disposing surface on which a semiconductor light emitting device is to be disposed. Predetermined conductive patterns are formed on the ceramic board. A light emitting portion has a semiconductor light emitting device. A pair of positive and negative planar electrode portions are formed on the ceramic board and connected to the semiconductor light emitting device through the conductive patterns. At least a part of the pair of planar electrode portions are set to be exposure regions exposed to the device disposing surface of the ceramic board and the exposure regions are positioned in portions other than a portion linked to the abutting surface in an outer peripheral portion of the device disposing surface.

A pulse health device which can impart a sufficient treatment efffect even to the periphery of waist part where waist part, hip part and abdoment part having an irregular shape exist closely to each other. An electrode belt 5 of the pulse health device 1 has has a slit 57 made along the longitudinal direction thereof between planar electrodes H1, H3 on the uper stage side and planar electrodes H2, H4 on the lower stage side. When the electrode belt 5 is applied to the periphery of waist part where the parts of a human body having an irregular shape exist closely to each other, the pulse health device 1 can absorb variation of shape through the slit 57 and since the planar electrodes H1, H2, H3 and H4 can touch the peripehry of the waist part stably, a sufficient treatment effect can be imparted.

A corona discharge mass spectrometer or an ion mobility spectrometer is provided with a robust corona discharge ionization source. The corona discharge ionization source, which can be operated at atmospheric pressures or at low vacuum, includes a multi-thread electrode and plane electrode. The multiple thread electrode has multiple discharge tips which provide redundancy, and improve ionization stability and the reliability and efficiency of the ionization source.

The band-pass filter has first terminals, second terminals, a first decoupled stacked bulk acoustic resonator (DSBAR), a second DSBAR, and an electrical circuit connecting the first DSBAR and the second DSBAR in series between the first terminals and the second terminals. Each DSBAR has a first film bulk acoustic resonator (FBAR), a second FBAR and an acoustic decoupler between the FBARs. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes.