The invention relates to the technical field of
laser chips, in particular to a wide-
wavelength electro-absorption modulated
laser chip and a preparation method and application thereof. According to the wide-
wavelength electro-absorption modulated
laser chip provided by the invention, a plurality of specific areas are divided on a substrate, a first modulator layer, a first front
grating layer and a second modulator layer are sequentially arranged on the areas, and
phosphorus ions are injected into the first modulator layer and the second modulator layer. The key sampling
grating is arranged in the first front
grating layer, the rear grating layer and the second front grating layer in an
electron beam
direct writing mode. A cladding layer and an
electric contact layer are sequentially stacked above all the functional
layers, an electric isolation trench is formed between the functional
layers through
etching, the uppermost layer is a P-
surface electrode, and an N-
surface electrode is arranged below the substrate. According to the
chip, the same post-sampling grating reflection area is utilized, double-end modulation is integrated through the
quantum well
hybrid technology, the effects of double-end light emitting and rate and
wavelength tuning performance doubling of the same integrated chip are achieved, and the
power consumption of the integrated chip is greatly reduced.