738 results about "Surface electrode" patented technology

Provided in the present application are an electrode assembly, a battery cell, a battery and an electrical device. The electrode assembly comprises a first electrode sheet and a second electrode sheet which have opposite polarities. The first electrode sheet comprises a first electrode sheet body, wherein the first electrode sheet body comprises a first current collecting body and first active material layers, the first current collecting body comprising two first surfaces opposite each other in the direction of thickness of the first current collecting body, and a first end face connecting the two first surfaces, and the first active material layers being arranged on the first surfaces. The electrode assembly further comprises an insulating member connected to the first electrode sheet body, wherein at least part of the insulating member is arranged on the outer side of the first end face in a first direction, the first direction being perpendicular to the direction of thickness. The insulating member can separate burrs on the first end face from the second electrode sheet, thereby reducing the risk of conduction between the burrs and the second electrode sheet and reducing the possibility of thermal runaway caused by a short circuit, improving the reliability of the battery cell.

The invention relates to a three-dimensional spiral high-density neural electrode and a preparation method and application thereof. The three-dimensional spiral high-density neural electrode comprises a probe structure and a plurality of electrode sites. The probe structure is formed by curling a planar flexible electrode precursor, and at least one end of the probe structure is provided with a spiral outer surface of a three-dimensional spiral line structure. Electrode sites are distributed along a spiral path, have a size of 5-1000 [mu] m, and are used for contacting biological tissues. On the planar flexible electrode precursor, electrode sites are arranged on one or more straight lines forming an inclined angle alpha with the axial direction of the probe, and the spatial distribution is matched with the edge. Compared with the prior art, the method has the advantages that the constraint of a traditional wiring mode is broken through, the integration of high-density three-dimensional channels is realized under a micro size, and a new generation of solution is provided for a high-precision brain-computer interface, deep brain stimulation and a three-dimensional electroencephalogram.

To provide a semiconductor device having a transistor part and a diode part, in which a reverse recovery loss is reduced.SOLUTION: A semiconductor device includes: an interlayer insulating film 38 provided over a semiconductor substrate 10; an emitter electrode 52 being a front surface electrode provided over the semiconductor substrate; contact parts where the front surface electrode and mesa parts 61 to 64 are connected in contact holes 54 of the interlayer insulating film; and a lifetime adjustment region 206 provided on a front surface side of the semiconductor substrate. The contact parts have a first contact part 77 provided in a transistor part, and a second contact part 87 provided in a diode part. The first contact part is disposed over the second contact part.SELECTED DRAWING: Figure 3A

The invention relates to the technical field of laser chips, in particular to a wide-wavelength electro-absorption modulated laser chip and a preparation method and application thereof. According to the wide-wavelength electro-absorption modulated laser chip provided by the invention, a plurality of specific areas are divided on a substrate, a first modulator layer, a first front grating layer and a second modulator layer are sequentially arranged on the areas, and phosphorus ions are injected into the first modulator layer and the second modulator layer. The key sampling grating is arranged in the first front grating layer, the rear grating layer and the second front grating layer in an electron beam direct writing mode. A cladding layer and an electric contact layer are sequentially stacked above all the functional layers, an electric isolation trench is formed between the functional layers through etching, the uppermost layer is a P-surface electrode, and an N-surface electrode is arranged below the substrate. According to the chip, the same post-sampling grating reflection area is utilized, double-end modulation is integrated through the quantum well hybrid technology, the effects of double-end light emitting and rate and wavelength tuning performance doubling of the same integrated chip are achieved, and the power consumption of the integrated chip is greatly reduced.

The invention relates to the field of rehabilitation instruments, in particular to an intelligent pneumatic hand function rehabilitation training system which comprises a flexible exoskeleton glove provided with a pneumatic muscle array and used for assisting fingers of a user in grasping training. The fingertip position of the glove is connected with a magnetorheological damper through a flexible cable, and the magnetorheological damper is used for providing dynamic resistance in the training process. The electrical stimulation module is used for activating hand muscle groups in a targeted manner through a surface electrode and enhancing neuromuscular control; the sensor module is used for collecting physiological data of a user in real time; the physiological data comprises electromyographic signals and tissue blood oxygen saturation; the control unit is used for switching training modes, by means of the intelligent air pressure hand function rehabilitation training system, the training intensity can be matched with the real-time ability of a patient all the time, and the rehabilitation training effect is improved.

A method of manufacturing a semiconductor device includes: preparing semiconductor substrate having a front surface and a back surface opposite to each other, the semiconductor substrate being of a first conductivity type; forming a device structure in the semiconductor substrate, at the front surface; performing thermal oxidation to form a gate insulating film and depositing a polysilicon to form a plurality of gate electrodes; removing the polysilicon at the back surface of the semiconductor substrate while leaving an oxide film formed at the back surface and a side surface of the semiconductor substrate by the thermal oxidation; forming a surface electrode on the device structure; and forming a plating film on the surface electrode while continuing to leave the oxide film at the back surface and the side surface of the semiconductor substrate.

The invention provides an electrode assembly, a battery monomer, a battery and a power utilization device. The electrode assembly comprises a first pole piece and a second pole piece which are opposite in polarity. The first pole piece comprises a first pole piece main body, the first pole piece main body comprises a first current collecting main body and a first active material layer, the first current collecting main body comprises two first surfaces which are oppositely arranged along the thickness direction of the first current collecting main body and a first end surface which is connected with the two first surfaces, and the first active material layer is arranged on the first surfaces. The electrode assembly further comprises an insulating part connected to the first pole piece body, at least part of the insulating part is arranged on the outer side of the first end face in the first direction, and the first direction is perpendicular to the thickness direction. The insulating part can separate the burrs on the first end face from the second pole piece, so that the risk of conduction between the burrs and the second pole piece is reduced, the possibility of thermal runaway caused by short circuit is reduced, and the reliability of the single battery is improved.

An acoustic wave device includes a piezoelectric layer including first and second major surfaces, an IDT electrode on one of the first and second major surfaces, and including electrode fingers arranged in an arrangement direction, and a support facing the second major surface, and including an acoustic reflection portion facing the second major surface. The electrode fingers include a first electrode finger at an outermost position in the arrangement direction and a second electrode finger adjacent thereto. A product of a width, height, and density of one of the first and second electrode fingers is greater than a product of a width, height, and density of a central electrode finger. When the thickness of the piezoelectric layer is denoted by d and a center-to-center distance between adjacent electrode fingers is denoted by p, d / p is less than or equal to about 0.5.

The invention discloses a micro-structure electrode flexible electrochemical sensor which comprises a flexible electrode substrate with a hemispherical array and three surface electrodes (a working electrode, a counter electrode and a reference electrode). The working electrode comprises a protruding metal array and a through hole array, protruding metal corresponds to the hemisphere array of the substrate, and the through hole array penetrates through the substrate. According to the sensor, the reaction area is increased through the three-dimensional structure, electron transfer is promoted, oxygen supply is guaranteed through the through hole array, the mechanical stability is enhanced through the flexible substrate and the structural design, and the sensor is suitable for wearable equipment.

The present application provides a method for performance evaluation and structure optimization of a high-power semiconductor laser chip, and a system for performance evaluation. Wherein the method for performance evaluation of a high-power semiconductor laser chip comprises: setting a window in an N-surface electrode of a chip to be tested; maintaining the chip to be tested in an operating state, wherein spontaneous radiation is generated in an active area of a quantum well of the chip to be tested; imaging the spontaneous radiation at a position outside the chip to be tested; acquiring, by using a spectrometer outside the chip to be tested, a spectrum of the spontaneous radiation to obtain a two-dimensional distribution of temperature of the quantum well of the chip to be tested in the operating state; and acquiring, by using a CCD camera outside the chip to be tested, an image of the spontaneous radiation to obtain a two-dimensional distribution of carriers in the quantum well of the chip to be tested in the operating state. The method for performance evaluation and structure optimization of a high-power semiconductor laser chip provided by the present application can get the temperature distribution and the carrier concentration distribution of the chip to be tested in the operating state with a resolution that is freely adjustable, the operation is convenient and easy to implement, and the accuracy of evaluation results is effectively improved.

The invention relates to the technical field of electromyographic signal analysis and processing, in particular to a low-delay electromyographic signal processing method based on multi-channel fusion, which comprises the following steps of: acquiring full-band electromyographic signals by using a surface electrode array, and screening channels by adopting a mode of combining a Pearson's correlation coefficient and mutual information; the method comprises the following steps: setting dual thresholds, combining signal strength and electrode impedance detection, then performing 20-500Hz Butterworth band-pass filtering, Z-Score standardization and normalization processing on screened signals to improve the signal quality, optimizing sliding window parameters through the Parseval theorem and a dynamic time warping algorithm, balancing the real-time performance and the feature extraction effect, and improving the accuracy and the accuracy of feature extraction. And finally, time domain, frequency domain and time-frequency domain multidimensional features are extracted in each time window, and feature vectors are generated through principal component analysis and linear discriminant analysis fusion and dimension reduction. The invention aims to solve the problems of poor real-time performance and low feature identification degree of the existing electromyographic signal processing method.

A pulsed field ablation (PFA) system includes a composite electrode, a body-surface electrode, a PFA generator, and a processor. The composite electrode is coupled to a distal end of a catheter configured for insertion into an organ of a patient. The body-surface electrode is configured to be attached to a skin of the patient. The PFA generator is configured to be electrically connected to the composite electrode of the catheter and to the body-surface electrode, and to generate Direct-Current (DC) PFA pulses. The processor is configured to control the PFA generator to apply the DC PFA pulses between the composite electrode and the body-surface electrode while the composite electrode is placed in contact with target tissue of the organ and the body-surface electrode is in contact with the skin of the patient.

The invention discloses a vertical photoconductive switch and a preparation method thereof, and belongs to the technical field of semiconductors, and the vertical photoconductive switch comprises a substrate, an upper surface electrode disposed on the upper surface of the substrate, and a lower surface electrode disposed on the lower surface of the substrate. The projection of the upper surface electrode on the substrate and the projection of the lower surface electrode on the substrate do not completely coincide, and the upper surface electrode and the lower surface electrode are both of an asymmetric structure. An electric field vector generated by the upper surface electrode and an electric field vector generated by the lower surface electrode are subjected to interference superposition in different directions to form a staggered electric field. According to the vertical photoconductive switch, the upper electrode and the lower electrode which are of an asymmetric structure are adopted, so that current is uniformly diffused in the radial direction and the vertical direction, overdense local current, incomplete superposition of projections of the upper electrode and the lower electrode and breaking of symmetry of an electric field are avoided, the local electric field intensity is effectively reduced, and the overall voltage endurance capability of a device is improved.

The invention relates to a moisture power generation device and a preparation method and application thereof, and belongs to the technical field of new energy materials. The moisture power generation device comprises a first electrode, a second electrode, a photo-initiation hydrogel active material and a container, the second electrode and the photo-initiation hydrogel active material are sequentially loaded in a container; the first electrode covers the surface of the photo-initiation hydrogel active material; the first electrode comprises a carbon surface electrode with a porous structure and a thermal initiation hydrogel active material loaded on the surface of the carbon surface electrode; the carbon surface electrode with the porous structure is obtained by carbonizing the carbonizable polymer film through laser direct writing. The moisture power generation device has the advantages of being easy to assemble, suitable for large-scale production, capable of continuously generating power and high in power generation efficiency.

A SiC semiconductor device is provided that is capable of improving the detection accuracy of the current value of a principal current detected by a current sensing portion by restraining heat from escaping from the current sensing portion to a wiring member joined to a sensing-side surface electrode. The semiconductor device 1 includes a SiC semiconductor substrate, a source portion 27 including a principal-current-side unit cell 34, a current sensing portion 26 including a sensing-side unit cell 40, a source-side surface electrode 5 disposed above the source portion 27, and a sensing-side surface electrode 6 that is disposed above the current sensing portion 26 and that has a sensing-side pad 15 to which a sensing-side wire is joined, and, in the semiconductor device 1, the sensing-side unit cell 40 is disposed so as to avoid being positioned directly under the sensing-side pad 15.

Provided is a multilayer ceramic capacitor capable of reducing stress.　A base electrode layer 32 of an external electrode 30 in this multilayer ceramic capacitor 10 includes an end surface electrode part 40 and a wraparound electrode part 41 that wraps around at least one among a first main surface 12a, a second main surface 12b, a first side surface 12c, and a second side surface 12d from a first end surface 12e and a second end surface 12f. The wraparound electrode part 41 includes base end side parts 42 positioned on the first end surface 12e and the second end surface 12f sides, and tip side parts 43 positioned on the tip sides of the base end side parts 42 away from the first end surface 12e and the second end surface 12f. At least one tip-side adhesion interface 53a where a laminate 12 is adhered to the tip side parts 43, and at least one tip-side non-adhesion interface 53b where the laminate 12 is not adhered to the tip-side parts 43, are included in tip-side interfaces 53 of the laminate 12 facing the tip-side parts 43.

The embodiment of the invention relates to the photovoltaic field, and provides a solar cell piece and a photovoltaic module, and the solar cell piece comprises a substrate; the doped conductive layer is positioned on one side of the substrate; the passivation layer covers the surface, away from the substrate, of the doped conductive layer; the electrodes comprise a plurality of bottom electrodes which are arranged at intervals in the first direction, and the bottom electrodes are electrically connected with the doped conductive layer; the top electrode extends in the first direction, the top electrode covers the surface of the bottom electrode, the surface, away from the substrate, of the top electrode is in a wave shape and comprises at least one wave crest and at least one wave trough, the wave trough of the top electrode directly faces the at least one bottom electrode, and the wave crest of the top electrode directly faces the interval of the at least one bottom electrode. The cost can be reduced, and the battery performance is ensured.

An acoustic wave device includes a piezoelectric layer with first and second major surfaces, an IDT electrode on at least one of the first and second major surfaces and including electrode fingers arranged in a predetermined direction, a support facing the second major surface and including an acoustic reflection portion on the second major surface side, and a load film in a region that, in plan view in a first direction, overlaps at least one end portion of the IDT electrode in the arrangement direction. The end portion includes a first electrode finger positioned outermost in the arrangement direction, and d / p is about 0.5 or less where d is a thickness of the piezoelectric layer and p is a center-to-center distance between adjacent ones of the electrode fingers.

A semiconductor light emitting device includes an edge-emitting element including emitters, a first front-surface electrode, a second front-surface electrode, first wires, and second wires. The emitters include a first emitter including a first element electrode, and a second emitter including a second element electrode. The first front-surface electrode is electrically connected to the first element electrode. The second front-surface electrode is electrically connected to the second element electrode. The first wires are electrically connecting the first element electrode to the first front-surface electrode. The second wires are electrically connecting the second element electrode to the second front-surface electrode. In plan view, a largest distance between adjacent ones of the second wires in the first direction is greater than a largest distance between adjacent ones of the first wires in the first direction.

The invention provides a solar cell, and belongs to the technical field of solar cells. The solar cell comprises a cell body which is provided with a suede structure and a polished surface structure, and the suede structure and the polished surface structure are located on the same or different surfaces of the cell body; the electrode structure comprises a first electrode and a second electrode, the first electrode is in contact with the suede structure, the second electrode is in contact with the polished surface structure, and the first electrode and the second electrode respectively comprise spherical metal particles and flaky metal particles; wherein the proportion of the spherical metal particles located in the contact area of the first electrode and the suede structure is larger than that of the spherical metal particles located in the contact area of the second electrode and the suede structure. The contact capability of the electrode and the suede is improved, and the matching of the contact resistance of the suede and the polished surface is realized, so that the photoelectric conversion efficiency and the stability of the solar cell are improved.

A defibrillator with a releasable wire assembly is provided. Four walls are each affixed on one side of a bottom surface. A dividing layer is affixed to each of the four walls creating an electrode enclosure configured to hold a pair of pads and a circuit enclosure configured to hold circuitry. Access to the circuitry is restricted by the bottom surface and dividing layer. A pair of wires are each connected on one end to one of the pads in the electrode enclosure and connected on another end to the circuitry in the circuit enclosure. A spool is placed within the electrode enclosure and includes a barrel with two center pieces through which the pair of wires is secured. The wires are wound around an outer surface of the center pieces of the spool, in the electrode enclosure, and are unwound when the pads are removed from the electrode enclosure.

The present invention relates to the technical field of microelectromechanical system manufacturing, and particularly relates to a micro-hemispherical gyro structure with a curved surface electrode and a preparation method thereof; the method includes coating the outer surface of a micro-hemispherical resonator, coating the inner and outer surfaces of the micro-hemispherical curved surface electrode and spraying photoresist; aligning a photomask plate with an optical lens structure with the inner surface of the micro-hemispherical curved surface electrode, performing photolithography and development to pattern the photoresist of the curved surface structure; using the photoresist as a mask to pattern the metal film on the micro-hemispherical curved surface electrode to form excitation detection electrodes, shielding electrodes, and anchor electrodes; coaxially aligning the micro-hemispherical resonator with the micro-hemispherical curved surface electrode, curing and conducting the resonator anchor points and the curved surface electrode anchor points, and fixing the reference surface of the outer edge of the curved surface electrode on a buffer plate to form a micro-hemispherical gyro structure with a curved surface electrode; the present invention can effectively reduce the process difficulty and cost of manufacturing the curved surface electrode and has better thermal adaptation performance.

The invention relates to the technical field of lithium ion batteries, and discloses a battery design method, device and equipment for lithium precipitation current and lithium precipitation quantity and a storage medium, and the method comprises the following steps: in the charging process of a lithium battery, measuring the voltage difference between a surface electrode and a negative electrode of the battery in real time by using a voltage detection circuit; calculating the lithium precipitation current of the battery according to the voltage difference; and obtaining the lithium precipitation capacity of the battery according to the integral of the lithium precipitation current to the time. The method aims at solving the problems that in the prior art, the lithium precipitation phenomenon is poor in real-time monitoring capacity and insufficient in quantitative analysis requirement in the battery fast charging process, and the method can effectively measure the surface lithium precipitation initial SOC, the lithium precipitation current and the lithium precipitation capacity under different electrochemical systems, different battery formulas and different working steps; and a powerful support is provided for evaluating the limit fast charging capability and the limit multiplying power capability of the battery and formulating the limit fast charging capability of the power battery.

A device and system for real-time visualization of the electrophysiologic activity of a brain, particularly at the cortical surface. The neural device can acquire, process, and display high-spatiotemporal-resolution electrophysiologic data in real-time across entire electrode arrays spanning many thousands of electrodes over identified anatomic regions. The system is compatible with thin-film cortical surface electrodes that record from neural tissues without damaging those tissues. The system can be used to guide diagnostic and therapeutic actions with high precision, and also provides the basis for a brain-computer interface.

The present invention relates to a high-speed, high-threshold acousto-optic modulator based on lithium niobate, belonging to the field of optoelectronics; the acousto-optic modulator comprises an acousto-optic medium, a bonding layer, a transducer and a surface electrode; the sound-transmitting surface of the acousto-optic medium is equipped with a transducer through the bonding layer, and the surface electrode is plated on the surface of the transducer; the acousto-optic medium is a lithium niobate crystal, the [100] axis of the lithium niobate crystal is perpendicular to the sound-transmitting surface of the acousto-optic medium, the [010] axis of the lithium niobate crystal is located within the sound-transmitting surface of the acousto-optic medium, and the angle between the [010] axis of the lithium niobate crystal and the incident light is 0.5°±0.3°. The present invention adopts lithium niobate crystal as the acousto-optic medium, improves the acousto-optic figure of merit of the lithium niobate crystal, and also improves the ability of the acousto-optic device to withstand high-power lasers; at the same time, the present invention also plates an anti-reflection film on the light-transmitting surface of the acousto-optic medium to improve the utilization rate of light energy by the acousto-optic device. Overall, the present invention can better meet the modulation requirements of high speed and high threshold.

A capacitor includes multiple capacitor elements including a first end surface electrode and a second end surface electrode; a first conductor in contact with and electrically connected to the first end surface electrode; a second conductor in contact with and electrically connected to the second end surface electrode; a third conductor adjacent to the first conductor, the third conductor including an embedded part positioned in a first section that overlaps with the first conductor and an exposed part positioned in a second section separate from the first section; and a sealing resin part sealing the third conductor to embed the embedded part and expose the exposed part.

The invention relates to a planar active focusing air coupling ultrasonic transducer, and belongs to the technical field of piezoelectric ultrasonic transducers, and the planar active focusing air coupling ultrasonic transducer is characterized in that a piezoelectric plate and a matching layer are arranged in a shell; the rear cover plate covers the tail end of the shell; the interface is arranged on the shell; a plurality of concentric annular structure electrodes are arranged on the first surface of the piezoelectric plate; the width of each concentric ring in the plurality of concentric ring structure electrodes is gradually increased from outside to inside; a second surface of the piezoelectric plate is provided with a second electrode; and the piezoelectric plate is connected with the interface through leads led out from the plurality of concentric ring-shaped structure electrodes and the whole-surface electrode. According to the plane active focusing air coupling ultrasonic transducer provided by the invention, active focusing of a plane acoustic beam is realized by changing the electrode structure of the piezoelectric plate and arranging a plurality of concentric annular electrode structures on the single surface of the piezoelectric plate, and the plane acoustic impedance matching layer with uniform thickness is matched; and the sensitivity of the focusing air coupling transducer is improved under the condition that the transverse resolution of the transducer is not influenced.

Each of a plurality of internal electrodes is electrically connected to a corresponding external electrode of a plurality of external electrodes. A plurality of auxiliary internal electrodes are disposed in the same layer as the plurality of internal electrodes to be located between each of a pair of side surfaces and the plurality of internal electrodes. Each of the plurality of external electrodes includes a pair of side surface electrode portions disposed on the pair of side surfaces and including a conductive resin layer. Each of the plurality of auxiliary internal electrodes is electrically connected to the external electrode to which the internal electrode located in the same layer is not electrically connected, and is located between the conductive resin layer to which the internal electrode located in the same layer is not electrically connected and the internal electrode located in the same layer.

A semiconductor device includes: an active region having a semiconductor element and a surface electrode provided by a wiring electrode material and connected to the semiconductor element on a side adjacent to a surface of a semiconductor chip; and a pad arrangement region having a pad provided by the wiring electrode material. The pad arrangement region overlaps the active region in a direction normal to the surface of the semiconductor chip. In a part where the pad arrangement region and the active region overlap, the pad is disposed on the surface electrode through an isolation insulating film so that the wiring electrode material is in two layers to provide a double-layer wiring electrode structure. In a part of the active region without overlapping the pad arrangement region, the surface electrode has a single-layer wiring electrode structure composed of a single layer of the wiring electrode material.

An acoustic wave device includes a piezoelectric layer including first and second main surfaces facing in a first direction, an IDT electrode on at least one of the first or second main surface and including electrode fingers arranged in an arrangement direction, a support facing the second main surface and including an acoustic reflection portion, and a protective film on at least one of the first or second main surface. In a region that overlaps, in plan view in the first direction, a first of the electrode fingers outermost in the arrangement direction, the protective film includes a surface of a first step where a side surface of the protective film is exposed in a direction intersecting an extending direction of the first electrode finger. When d is a thickness of the piezoelectric layer and p is a center-to-center distance between adjacent electrode fingers, d / p is about 0.5 or less.