1146 results about "Surface electrode" patented technology

Wearable sensors and uses thereof are disclosed. Preferred sensors include surface EMG electrodes for measuring electrical muscle activity, by which muscle contraction is measured. Such muscle contraction can be used to determine a person's posture, especially when the contraction being measured is that of core muscles. An alert preferably is provided to a person in real time when an incorrect posture is detected. By providing such biofeedback, a person is trained in maintaining a good posture. Such posture training is believed to heal alleviate or even present lower back pain. Wearable sensors of the invention also can be used to measure contraction in muscles during exercise, including running and strength training, to gain information for use in improving such activities.

The utility model provides an electrode assembly, a battery monomer, a battery and a power utilization device. The electrode assembly comprises a first pole piece and a second pole piece which are opposite in polarity. The first pole piece comprises a first pole piece main body, the first pole piece main body comprises a first current collecting main body and a first active material layer, the first current collecting main body comprises two first surfaces which are oppositely arranged along the thickness direction of the first current collecting main body and a first end surface which is connected with the two first surfaces, and the first active material layer is arranged on the first surfaces. The electrode assembly further comprises an insulating part connected to the first pole piece body, at least part of the insulating part is arranged on the outer side of the first end face in the first direction, and the first direction is perpendicular to the thickness direction. The insulating part can separate the burrs on the first end face from the second pole piece, so that the risk of conduction between the burrs and the second pole piece is reduced, the possibility of thermal runaway caused by short circuit is reduced, and the reliability of the single battery is improved.

The embodiment of the invention relates to the photovoltaic field, and provides a solar cell piece and a photovoltaic module, and the solar cell piece comprises a substrate which comprises a front surface and a back surface which are opposite to each other, and the substrate comprises metal regions and non-metal regions which are alternately arranged; the tunneling oxide layer at least covers the non-metal region on the front side; the first doped conductive layer is located on the metal region on the front side, the first doped conductive layer is doped with a first doped element and a second doped element, the first doped element is a metal element, and the second doped element is a non-metal element; the second doped conductive layer is located on the surface of the tunneling oxide layer and the surface of the first doped conductive layer, and the second doped conductive layer is doped with a first doping element; the passivation layer is located on the surface of the second doped conductive layer; the electrode penetrates through the passivation layer, and at least part of the electrode further penetrates through the second doped conductive layer to be in contact connection with the first doped conductive layer. And the photoelectric conversion efficiency of the photovoltaic cell can be improved.

Provided in the present application are an electrode assembly, a battery cell, a battery and an electrical device. The electrode assembly comprises a first electrode sheet and a second electrode sheet which have opposite polarities. The first electrode sheet comprises a first electrode sheet body, wherein the first electrode sheet body comprises a first current collecting body and first active material layers, the first current collecting body comprising two first surfaces opposite each other in the direction of thickness of the first current collecting body, and a first end face connecting the two first surfaces, and the first active material layers being arranged on the first surfaces. The electrode assembly further comprises an insulating member connected to the first electrode sheet body, wherein at least part of the insulating member is arranged on the outer side of the first end face in a first direction, the first direction being perpendicular to the direction of thickness. The insulating member can separate burrs on the first end face from the second electrode sheet, thereby reducing the risk of conduction between the burrs and the second electrode sheet and reducing the possibility of thermal runaway caused by a short circuit, improving the reliability of the battery cell.

The invention relates to a low-inductance SiC half-bridge power module layout structure based on overlapped copper bar conduction. Under the structure, the overlapped copper bars are used for replacing bonding wires in a traditional packaging structure, pits are machined in the copper bars to be connected with the power electrodes on the top face of the chip, the copper bars are bent to be connected with the substrate coated copper, and current conduction is achieved. Based on the overlapped copper bar structure, when the upper switch tube and the lower switch tube are switched on, mutual inductance and mutual suppression exist between current paths on the lower conductive copper bar and the upper conductive copper bar, and the module has low parasitic inductance; two ends of the upper-layer copper bar and the lower-layer copper bar are fixedly connected with the substrate, and the middle positions of the upper-layer copper bar and the lower-layer copper bar are fixedly connected with a chip top surface electrode, so that the module reliability is high; the thicknesses of the upper and lower copper bars are adjustable to ensure the through-current capability of the module; the copper bar is low in processing cost, does not need a cushion block, and reduces the number of connection interfaces. Therefore, compared with the existing layout packaging structure, the module layout structure provided by the invention has outstanding advantages in the aspects of parasitic inductance, outflow capacity and cost, and is suitable for popularization and application.

An elongate, flexible, medical device having distal and proximal ends, including an inner member having a proximal and distal end, a support member extending around the inner member between the proximal and distal end, a plurality of electrically-conductive wires, each braided with the support member having a proximal and distal end, an outer member surrounding the inner member, the support member, and the plurality of electrically-conductive wires and an actuator including a polymer electrolyte layer secured adjacent to the distal end of the elongate, flexible inner member and defining an exterior surface, electrodes distributed about the exterior of the polymer electrolyte layer. The distal end of one of the electrically-conductive wires is electrically connected to one of the electrodes. The polymer electrolyte layer is configured to deform asymmetrically in response to the application of an electrical signal through the plurality of electrically-conductive wires to the plurality of electrodes.

The invention relates to a three-dimensional spiral high-density neural electrode and a preparation method and application thereof. The three-dimensional spiral high-density neural electrode comprises a probe structure and a plurality of electrode sites. The probe structure is formed by curling a planar flexible electrode precursor, and at least one end of the probe structure is provided with a spiral outer surface of a three-dimensional spiral line structure. Electrode sites are distributed along a spiral path, have a size of 5-1000 [mu] m, and are used for contacting biological tissues. On the planar flexible electrode precursor, electrode sites are arranged on one or more straight lines forming an inclined angle alpha with the axial direction of the probe, and the spatial distribution is matched with the edge. Compared with the prior art, the method has the advantages that the constraint of a traditional wiring mode is broken through, the integration of high-density three-dimensional channels is realized under a micro size, and a new generation of solution is provided for a high-precision brain-computer interface, deep brain stimulation and a three-dimensional electroencephalogram.

To provide a semiconductor device having a transistor part and a diode part, in which a reverse recovery loss is reduced.SOLUTION: A semiconductor device includes: an interlayer insulating film 38 provided over a semiconductor substrate 10; an emitter electrode 52 being a front surface electrode provided over the semiconductor substrate; contact parts where the front surface electrode and mesa parts 61 to 64 are connected in contact holes 54 of the interlayer insulating film; and a lifetime adjustment region 206 provided on a front surface side of the semiconductor substrate. The contact parts have a first contact part 77 provided in a transistor part, and a second contact part 87 provided in a diode part. The first contact part is disposed over the second contact part.SELECTED DRAWING: Figure 3A

The invention provides a solar cell and a photovoltaic module, and belongs to the technical field of semiconductors. The solar cell includes: a silicon substrate including a surface having a conductive region; the doped semiconductor layer is located on the conductive region of the silicon substrate, and the doped semiconductor layer comprises an electrode region; the passivation anti-reflection layer is located on the surface, away from the silicon substrate, of the doped semiconductor layer; the electrode is located on the passivation anti-reflection layer, and the electrode penetrates through the passivation anti-reflection layer and makes contact with the part of the electrode area; wherein the passivation anti-reflection layer at the edge of the electrode region is provided with a first corrosion region, and the first corrosion region is provided with a plurality of first holes.

The invention relates to the technical field of laser chips, in particular to a wide-wavelength electro-absorption modulated laser chip and a preparation method and application thereof. According to the wide-wavelength electro-absorption modulated laser chip provided by the invention, a plurality of specific areas are divided on a substrate, a first modulator layer, a first front grating layer and a second modulator layer are sequentially arranged on the areas, and phosphorus ions are injected into the first modulator layer and the second modulator layer. The key sampling grating is arranged in the first front grating layer, the rear grating layer and the second front grating layer in an electron beam direct writing mode. A cladding layer and an electric contact layer are sequentially stacked above all the functional layers, an electric isolation trench is formed between the functional layers through etching, the uppermost layer is a P-surface electrode, and an N-surface electrode is arranged below the substrate. According to the chip, the same post-sampling grating reflection area is utilized, double-end modulation is integrated through the quantum well hybrid technology, the effects of double-end light emitting and rate and wavelength tuning performance doubling of the same integrated chip are achieved, and the power consumption of the integrated chip is greatly reduced.

The invention relates to the field of rehabilitation instruments, in particular to an intelligent pneumatic hand function rehabilitation training system which comprises a flexible exoskeleton glove provided with a pneumatic muscle array and used for assisting fingers of a user in grasping training. The fingertip position of the glove is connected with a magnetorheological damper through a flexible cable, and the magnetorheological damper is used for providing dynamic resistance in the training process. The electrical stimulation module is used for activating hand muscle groups in a targeted manner through a surface electrode and enhancing neuromuscular control; the sensor module is used for collecting physiological data of a user in real time; the physiological data comprises electromyographic signals and tissue blood oxygen saturation; the control unit is used for switching training modes, by means of the intelligent air pressure hand function rehabilitation training system, the training intensity can be matched with the real-time ability of a patient all the time, and the rehabilitation training effect is improved.

A method of manufacturing a semiconductor device includes: preparing semiconductor substrate having a front surface and a back surface opposite to each other, the semiconductor substrate being of a first conductivity type; forming a device structure in the semiconductor substrate, at the front surface; performing thermal oxidation to form a gate insulating film and depositing a polysilicon to form a plurality of gate electrodes; removing the polysilicon at the back surface of the semiconductor substrate while leaving an oxide film formed at the back surface and a side surface of the semiconductor substrate by the thermal oxidation; forming a surface electrode on the device structure; and forming a plating film on the surface electrode while continuing to leave the oxide film at the back surface and the side surface of the semiconductor substrate.

The invention relates to the technical field of laser beam machining, in particular to a method and system for machining a resonant gyroscope curved surface electrode based on femtosecond laser, and the method comprises the following steps: clamping an electrode base on a femtosecond laser galvanometer five-axis linkage machining platform; the center axis of the curved surface electrode and the laser beam coincide with the rotating axis of the femtosecond laser galvanometer five-axis linkage machining platform, and the accurate coordinates of the laser beam in a machine tool coordinate system are determined; performing spherical surface specificity modeling on the electrode base to obtain a control code; a control code is input into a machine tool control system, after control parameters are adjusted, femtosecond laser five-axis linkage machining is conducted on the electrode base, and reflected light signals are transmitted to a computer through a real-time observer in the machining process. The method and the system provided by the invention solve the technical problem that the processing precision and the processing quality of the curved surface electrode are difficult to meet the requirements due to film layer flanging, recasting and substrate cracking caused by a heat effect.

The invention provides an electrode assembly, a battery monomer, a battery and a power utilization device. The electrode assembly comprises a first pole piece and a second pole piece which are opposite in polarity. The first pole piece comprises a first pole piece main body, the first pole piece main body comprises a first current collecting main body and a first active material layer, the first current collecting main body comprises two first surfaces which are oppositely arranged along the thickness direction of the first current collecting main body and a first end surface which is connected with the two first surfaces, and the first active material layer is arranged on the first surfaces. The electrode assembly further comprises an insulating part connected to the first pole piece body, at least part of the insulating part is arranged on the outer side of the first end face in the first direction, and the first direction is perpendicular to the thickness direction. The insulating part can separate the burrs on the first end face from the second pole piece, so that the risk of conduction between the burrs and the second pole piece is reduced, the possibility of thermal runaway caused by short circuit is reduced, and the reliability of the single battery is improved.

A connection arrangement includes a composite pane composed of a first pane and a second pane, which are connected to an intermediate layer, two electrically conductive structures, in particular two mutually opposed surface electrodes of an electro-optical functional element that are arranged between the first pane and the second pane, and a flexible flat cable having electrical conductor tracks, includes a first connection region at a first end and on a first side of the flat cable, wherein the first connection region has a contact point of at least one conductor track, at least one second connection region at the first end and on the first side of the flat cable, wherein the second connection region has a contact point of at least one conductor track, and a third connection region with contact points of the conductor tracks at a second end of the flat cable.

An acoustic wave device includes a piezoelectric layer including first and second major surfaces, an IDT electrode on one of the first and second major surfaces, and including electrode fingers arranged in an arrangement direction, and a support facing the second major surface, and including an acoustic reflection portion facing the second major surface. The electrode fingers include a first electrode finger at an outermost position in the arrangement direction and a second electrode finger adjacent thereto. A product of a width, height, and density of one of the first and second electrode fingers is greater than a product of a width, height, and density of a central electrode finger. When the thickness of the piezoelectric layer is denoted by d and a center-to-center distance between adjacent electrode fingers is denoted by p, d / p is less than or equal to about 0.5.

There is provided piezoelectric actuator including: vibration plate; first and second piezoelectric layers; a plurality of individual electrodes arranged on actuator surface, of the second piezoelectric layer, on first side in first direction of the second piezoelectric layer; first and second common electrodes; first surface electrode arranged on the actuator surface at an end portion in second direction orthogonal to the first direction; second surface electrode arranged on the actuator surface; and non-conductive electrodes arranged at end portions in the second direction of at least two of the actuator surface, and the first and second boundary surfaces, and which are not in conduction with any of the individual electrodes, and the first and second common electrodes. The non-conductive electrodes are arranged at least in an area of an end portion in the second direction of a stack of the vibration plate, and the first and second piezoelectric layers.

The invention discloses a system and a method for measuring current distribution in a power battery. The surface of a battery pole piece is divided into a plurality of areas by a plurality of surface electrodes; the voltage acquisition module acquires a real-time voltage value between two adjacent surface electrodes, acquires a real-time voltage value between the last surface electrode and a battery tab, and obtains a time-voltage curve according to the acquired real-time voltage values; the current analysis module is used for obtaining the real-time current value of each area on the surface of the battery pole piece according to the real-time voltage value, and then obtaining the charge state value of each area on the surface of the battery pole piece and the current distribution density in the power battery according to the real-time current value of each area on the surface of the battery pole piece; and judging the area of the lithium risk point of the power battery. According to the invention, current distribution based on a power battery plane can be measured, and points with relatively large current density distribution can be identified, so that lithium precipitation risk points can be pre-judged.

The invention discloses a micro-structure electrode flexible electrochemical sensor which comprises a flexible electrode substrate with a hemispherical array and three surface electrodes (a working electrode, a counter electrode and a reference electrode). The working electrode comprises a protruding metal array and a through hole array, protruding metal corresponds to the hemisphere array of the substrate, and the through hole array penetrates through the substrate. According to the sensor, the reaction area is increased through the three-dimensional structure, electron transfer is promoted, oxygen supply is guaranteed through the through hole array, the mechanical stability is enhanced through the flexible substrate and the structural design, and the sensor is suitable for wearable equipment.

The present application provides a method for performance evaluation and structure optimization of a high-power semiconductor laser chip, and a system for performance evaluation. Wherein the method for performance evaluation of a high-power semiconductor laser chip comprises: setting a window in an N-surface electrode of a chip to be tested; maintaining the chip to be tested in an operating state, wherein spontaneous radiation is generated in an active area of a quantum well of the chip to be tested; imaging the spontaneous radiation at a position outside the chip to be tested; acquiring, by using a spectrometer outside the chip to be tested, a spectrum of the spontaneous radiation to obtain a two-dimensional distribution of temperature of the quantum well of the chip to be tested in the operating state; and acquiring, by using a CCD camera outside the chip to be tested, an image of the spontaneous radiation to obtain a two-dimensional distribution of carriers in the quantum well of the chip to be tested in the operating state. The method for performance evaluation and structure optimization of a high-power semiconductor laser chip provided by the present application can get the temperature distribution and the carrier concentration distribution of the chip to be tested in the operating state with a resolution that is freely adjustable, the operation is convenient and easy to implement, and the accuracy of evaluation results is effectively improved.

The invention provides a carbon-based perovskite solar cell and a preparation method thereof. The method comprises a step of preparing a laminated structure, the laminated structure comprises a transparent conductive substrate, and an electron transport layer, a mesoporous layer, a perovskite active layer and a carbon electrode layer which are sequentially laminated on the surface of the transparent conductive substrate, and the carbon electrode layer comprises a main body layer part and an electrode part. The main body layer part is arranged on the surface of the side, away from the transparent conductive substrate, of the perovskite active layer, the electrode part is arranged on the transparent conductive substrate and makes contact with the electron transport layer, the mesoporous layer and the perovskite active layer, and the surface of the side, away from the transparent conductive substrate, of the electrode part is flush with the surface of the side, away from the transparent conductive substrate, of the main body layer part. After the step of preparing the laminated structure, the preparation method comprises the following steps: applying a pressure perpendicular to the laminated structure to the laminated structure and simultaneously carrying out annealing treatment to obtain the carbon-based perovskite solar cell. By adopting the method provided by the invention, the stability of the carbon-based perovskite solar cell can be remarkably improved.

The invention relates to the technical field of electromyographic signal analysis and processing, in particular to a low-delay electromyographic signal processing method based on multi-channel fusion, which comprises the following steps of: acquiring full-band electromyographic signals by using a surface electrode array, and screening channels by adopting a mode of combining a Pearson's correlation coefficient and mutual information; the method comprises the following steps: setting dual thresholds, combining signal strength and electrode impedance detection, then performing 20-500Hz Butterworth band-pass filtering, Z-Score standardization and normalization processing on screened signals to improve the signal quality, optimizing sliding window parameters through the Parseval theorem and a dynamic time warping algorithm, balancing the real-time performance and the feature extraction effect, and improving the accuracy and the accuracy of feature extraction. And finally, time domain, frequency domain and time-frequency domain multidimensional features are extracted in each time window, and feature vectors are generated through principal component analysis and linear discriminant analysis fusion and dimension reduction. The invention aims to solve the problems of poor real-time performance and low feature identification degree of the existing electromyographic signal processing method.

A pulsed field ablation (PFA) system includes a composite electrode, a body-surface electrode, a PFA generator, and a processor. The composite electrode is coupled to a distal end of a catheter configured for insertion into an organ of a patient. The body-surface electrode is configured to be attached to a skin of the patient. The PFA generator is configured to be electrically connected to the composite electrode of the catheter and to the body-surface electrode, and to generate Direct-Current (DC) PFA pulses. The processor is configured to control the PFA generator to apply the DC PFA pulses between the composite electrode and the body-surface electrode while the composite electrode is placed in contact with target tissue of the organ and the body-surface electrode is in contact with the skin of the patient.

The invention discloses a vertical photoconductive switch and a preparation method thereof, and belongs to the technical field of semiconductors, and the vertical photoconductive switch comprises a substrate, an upper surface electrode disposed on the upper surface of the substrate, and a lower surface electrode disposed on the lower surface of the substrate. The projection of the upper surface electrode on the substrate and the projection of the lower surface electrode on the substrate do not completely coincide, and the upper surface electrode and the lower surface electrode are both of an asymmetric structure. An electric field vector generated by the upper surface electrode and an electric field vector generated by the lower surface electrode are subjected to interference superposition in different directions to form a staggered electric field. According to the vertical photoconductive switch, the upper electrode and the lower electrode which are of an asymmetric structure are adopted, so that current is uniformly diffused in the radial direction and the vertical direction, overdense local current, incomplete superposition of projections of the upper electrode and the lower electrode and breaking of symmetry of an electric field are avoided, the local electric field intensity is effectively reduced, and the overall voltage endurance capability of a device is improved.

The invention relates to a moisture power generation device and a preparation method and application thereof, and belongs to the technical field of new energy materials. The moisture power generation device comprises a first electrode, a second electrode, a photo-initiation hydrogel active material and a container, the second electrode and the photo-initiation hydrogel active material are sequentially loaded in a container; the first electrode covers the surface of the photo-initiation hydrogel active material; the first electrode comprises a carbon surface electrode with a porous structure and a thermal initiation hydrogel active material loaded on the surface of the carbon surface electrode; the carbon surface electrode with the porous structure is obtained by carbonizing the carbonizable polymer film through laser direct writing. The moisture power generation device has the advantages of being easy to assemble, suitable for large-scale production, capable of continuously generating power and high in power generation efficiency.

A SiC semiconductor device is provided that is capable of improving the detection accuracy of the current value of a principal current detected by a current sensing portion by restraining heat from escaping from the current sensing portion to a wiring member joined to a sensing-side surface electrode. The semiconductor device 1 includes a SiC semiconductor substrate, a source portion 27 including a principal-current-side unit cell 34, a current sensing portion 26 including a sensing-side unit cell 40, a source-side surface electrode 5 disposed above the source portion 27, and a sensing-side surface electrode 6 that is disposed above the current sensing portion 26 and that has a sensing-side pad 15 to which a sensing-side wire is joined, and, in the semiconductor device 1, the sensing-side unit cell 40 is disposed so as to avoid being positioned directly under the sensing-side pad 15.

Provided is a multilayer ceramic capacitor capable of reducing stress.　A base electrode layer 32 of an external electrode 30 in this multilayer ceramic capacitor 10 includes an end surface electrode part 40 and a wraparound electrode part 41 that wraps around at least one among a first main surface 12a, a second main surface 12b, a first side surface 12c, and a second side surface 12d from a first end surface 12e and a second end surface 12f. The wraparound electrode part 41 includes base end side parts 42 positioned on the first end surface 12e and the second end surface 12f sides, and tip side parts 43 positioned on the tip sides of the base end side parts 42 away from the first end surface 12e and the second end surface 12f. At least one tip-side adhesion interface 53a where a laminate 12 is adhered to the tip side parts 43, and at least one tip-side non-adhesion interface 53b where the laminate 12 is not adhered to the tip-side parts 43, are included in tip-side interfaces 53 of the laminate 12 facing the tip-side parts 43.

A film capacitor including: a capacitor element including a laminate of a dielectric film and an internal electrode, a first end surface electrode on a first end surface of the laminate, and a second end surface electrode on a second end surface of the laminate; a laminate film including a covering part covering the capacitor element, and a flange extending from an outer edge of the covering part; a first terminal electrode connected to the first end surface electrode inside the laminate film and exposed outside of the laminate film, and a second terminal electrode connected to the second end surface electrode inside the laminate film and exposed outside of the laminate film; and a fixing member including a main body disposed along the capacitor element inside the laminate film, and a fixing part extending from the main body and exposed to the outside of the laminate film.

The embodiment of the invention relates to the photovoltaic field, and provides a solar cell piece and a photovoltaic module, and the solar cell piece comprises a substrate; the doped conductive layer is positioned on one side of the substrate; the passivation layer covers the surface, away from the substrate, of the doped conductive layer; the electrodes comprise a plurality of bottom electrodes which are arranged at intervals in the first direction, and the bottom electrodes are electrically connected with the doped conductive layer; the top electrode extends in the first direction, the top electrode covers the surface of the bottom electrode, the surface, away from the substrate, of the top electrode is in a wave shape and comprises at least one wave crest and at least one wave trough, the wave trough of the top electrode directly faces the at least one bottom electrode, and the wave crest of the top electrode directly faces the interval of the at least one bottom electrode. The cost can be reduced, and the battery performance is ensured.

An acoustic wave device includes a piezoelectric layer with first and second major surfaces, an IDT electrode on at least one of the first and second major surfaces and including electrode fingers arranged in a predetermined direction, a support facing the second major surface and including an acoustic reflection portion on the second major surface side, and a load film in a region that, in plan view in a first direction, overlaps at least one end portion of the IDT electrode in the arrangement direction. The end portion includes a first electrode finger positioned outermost in the arrangement direction, and d / p is about 0.5 or less where d is a thickness of the piezoelectric layer and p is a center-to-center distance between adjacent ones of the electrode fingers.