595 results about "Surface electrode" patented technology

Provided in the present application are an electrode assembly, a battery cell, a battery and an electrical device. The electrode assembly comprises a first electrode sheet and a second electrode sheet which have opposite polarities. The first electrode sheet comprises a first electrode sheet body, wherein the first electrode sheet body comprises a first current collecting body and first active material layers, the first current collecting body comprising two first surfaces opposite each other in the direction of thickness of the first current collecting body, and a first end face connecting the two first surfaces, and the first active material layers being arranged on the first surfaces. The electrode assembly further comprises an insulating member connected to the first electrode sheet body, wherein at least part of the insulating member is arranged on the outer side of the first end face in a first direction, the first direction being perpendicular to the direction of thickness. The insulating member can separate burrs on the first end face from the second electrode sheet, thereby reducing the risk of conduction between the burrs and the second electrode sheet and reducing the possibility of thermal runaway caused by a short circuit, improving the reliability of the battery cell.

The invention relates to a three-dimensional spiral high-density neural electrode and a preparation method and application thereof. The three-dimensional spiral high-density neural electrode comprises a probe structure and a plurality of electrode sites. The probe structure is formed by curling a planar flexible electrode precursor, and at least one end of the probe structure is provided with a spiral outer surface of a three-dimensional spiral line structure. Electrode sites are distributed along a spiral path, have a size of 5-1000 [mu] m, and are used for contacting biological tissues. On the planar flexible electrode precursor, electrode sites are arranged on one or more straight lines forming an inclined angle alpha with the axial direction of the probe, and the spatial distribution is matched with the edge. Compared with the prior art, the method has the advantages that the constraint of a traditional wiring mode is broken through, the integration of high-density three-dimensional channels is realized under a micro size, and a new generation of solution is provided for a high-precision brain-computer interface, deep brain stimulation and a three-dimensional electroencephalogram.

To provide a semiconductor device having a transistor part and a diode part, in which a reverse recovery loss is reduced.SOLUTION: A semiconductor device includes: an interlayer insulating film 38 provided over a semiconductor substrate 10; an emitter electrode 52 being a front surface electrode provided over the semiconductor substrate; contact parts where the front surface electrode and mesa parts 61 to 64 are connected in contact holes 54 of the interlayer insulating film; and a lifetime adjustment region 206 provided on a front surface side of the semiconductor substrate. The contact parts have a first contact part 77 provided in a transistor part, and a second contact part 87 provided in a diode part. The first contact part is disposed over the second contact part.SELECTED DRAWING: Figure 3A

The invention relates to the field of rehabilitation instruments, in particular to an intelligent pneumatic hand function rehabilitation training system which comprises a flexible exoskeleton glove provided with a pneumatic muscle array and used for assisting fingers of a user in grasping training. The fingertip position of the glove is connected with a magnetorheological damper through a flexible cable, and the magnetorheological damper is used for providing dynamic resistance in the training process. The electrical stimulation module is used for activating hand muscle groups in a targeted manner through a surface electrode and enhancing neuromuscular control; the sensor module is used for collecting physiological data of a user in real time; the physiological data comprises electromyographic signals and tissue blood oxygen saturation; the control unit is used for switching training modes, by means of the intelligent air pressure hand function rehabilitation training system, the training intensity can be matched with the real-time ability of a patient all the time, and the rehabilitation training effect is improved.

A method of manufacturing a semiconductor device includes: preparing semiconductor substrate having a front surface and a back surface opposite to each other, the semiconductor substrate being of a first conductivity type; forming a device structure in the semiconductor substrate, at the front surface; performing thermal oxidation to form a gate insulating film and depositing a polysilicon to form a plurality of gate electrodes; removing the polysilicon at the back surface of the semiconductor substrate while leaving an oxide film formed at the back surface and a side surface of the semiconductor substrate by the thermal oxidation; forming a surface electrode on the device structure; and forming a plating film on the surface electrode while continuing to leave the oxide film at the back surface and the side surface of the semiconductor substrate.

The invention provides an electrode assembly, a battery monomer, a battery and a power utilization device. The electrode assembly comprises a first pole piece and a second pole piece which are opposite in polarity. The first pole piece comprises a first pole piece main body, the first pole piece main body comprises a first current collecting main body and a first active material layer, the first current collecting main body comprises two first surfaces which are oppositely arranged along the thickness direction of the first current collecting main body and a first end surface which is connected with the two first surfaces, and the first active material layer is arranged on the first surfaces. The electrode assembly further comprises an insulating part connected to the first pole piece body, at least part of the insulating part is arranged on the outer side of the first end face in the first direction, and the first direction is perpendicular to the thickness direction. The insulating part can separate the burrs on the first end face from the second pole piece, so that the risk of conduction between the burrs and the second pole piece is reduced, the possibility of thermal runaway caused by short circuit is reduced, and the reliability of the single battery is improved.

An acoustic wave device includes a piezoelectric layer including first and second major surfaces, an IDT electrode on one of the first and second major surfaces, and including electrode fingers arranged in an arrangement direction, and a support facing the second major surface, and including an acoustic reflection portion facing the second major surface. The electrode fingers include a first electrode finger at an outermost position in the arrangement direction and a second electrode finger adjacent thereto. A product of a width, height, and density of one of the first and second electrode fingers is greater than a product of a width, height, and density of a central electrode finger. When the thickness of the piezoelectric layer is denoted by d and a center-to-center distance between adjacent electrode fingers is denoted by p, d / p is less than or equal to about 0.5.

The invention discloses a micro-structure electrode flexible electrochemical sensor which comprises a flexible electrode substrate with a hemispherical array and three surface electrodes (a working electrode, a counter electrode and a reference electrode). The working electrode comprises a protruding metal array and a through hole array, protruding metal corresponds to the hemisphere array of the substrate, and the through hole array penetrates through the substrate. According to the sensor, the reaction area is increased through the three-dimensional structure, electron transfer is promoted, oxygen supply is guaranteed through the through hole array, the mechanical stability is enhanced through the flexible substrate and the structural design, and the sensor is suitable for wearable equipment.

The present application provides a method for performance evaluation and structure optimization of a high-power semiconductor laser chip, and a system for performance evaluation. Wherein the method for performance evaluation of a high-power semiconductor laser chip comprises: setting a window in an N-surface electrode of a chip to be tested; maintaining the chip to be tested in an operating state, wherein spontaneous radiation is generated in an active area of a quantum well of the chip to be tested; imaging the spontaneous radiation at a position outside the chip to be tested; acquiring, by using a spectrometer outside the chip to be tested, a spectrum of the spontaneous radiation to obtain a two-dimensional distribution of temperature of the quantum well of the chip to be tested in the operating state; and acquiring, by using a CCD camera outside the chip to be tested, an image of the spontaneous radiation to obtain a two-dimensional distribution of carriers in the quantum well of the chip to be tested in the operating state. The method for performance evaluation and structure optimization of a high-power semiconductor laser chip provided by the present application can get the temperature distribution and the carrier concentration distribution of the chip to be tested in the operating state with a resolution that is freely adjustable, the operation is convenient and easy to implement, and the accuracy of evaluation results is effectively improved.

The invention relates to the technical field of electromyographic signal analysis and processing, in particular to a low-delay electromyographic signal processing method based on multi-channel fusion, which comprises the following steps of: acquiring full-band electromyographic signals by using a surface electrode array, and screening channels by adopting a mode of combining a Pearson's correlation coefficient and mutual information; the method comprises the following steps: setting dual thresholds, combining signal strength and electrode impedance detection, then performing 20-500Hz Butterworth band-pass filtering, Z-Score standardization and normalization processing on screened signals to improve the signal quality, optimizing sliding window parameters through the Parseval theorem and a dynamic time warping algorithm, balancing the real-time performance and the feature extraction effect, and improving the accuracy and the accuracy of feature extraction. And finally, time domain, frequency domain and time-frequency domain multidimensional features are extracted in each time window, and feature vectors are generated through principal component analysis and linear discriminant analysis fusion and dimension reduction. The invention aims to solve the problems of poor real-time performance and low feature identification degree of the existing electromyographic signal processing method.

The invention discloses a vertical photoconductive switch and a preparation method thereof, and belongs to the technical field of semiconductors, and the vertical photoconductive switch comprises a substrate, an upper surface electrode disposed on the upper surface of the substrate, and a lower surface electrode disposed on the lower surface of the substrate. The projection of the upper surface electrode on the substrate and the projection of the lower surface electrode on the substrate do not completely coincide, and the upper surface electrode and the lower surface electrode are both of an asymmetric structure. An electric field vector generated by the upper surface electrode and an electric field vector generated by the lower surface electrode are subjected to interference superposition in different directions to form a staggered electric field. According to the vertical photoconductive switch, the upper electrode and the lower electrode which are of an asymmetric structure are adopted, so that current is uniformly diffused in the radial direction and the vertical direction, overdense local current, incomplete superposition of projections of the upper electrode and the lower electrode and breaking of symmetry of an electric field are avoided, the local electric field intensity is effectively reduced, and the overall voltage endurance capability of a device is improved.

The invention relates to a moisture power generation device and a preparation method and application thereof, and belongs to the technical field of new energy materials. The moisture power generation device comprises a first electrode, a second electrode, a photo-initiation hydrogel active material and a container, the second electrode and the photo-initiation hydrogel active material are sequentially loaded in a container; the first electrode covers the surface of the photo-initiation hydrogel active material; the first electrode comprises a carbon surface electrode with a porous structure and a thermal initiation hydrogel active material loaded on the surface of the carbon surface electrode; the carbon surface electrode with the porous structure is obtained by carbonizing the carbonizable polymer film through laser direct writing. The moisture power generation device has the advantages of being easy to assemble, suitable for large-scale production, capable of continuously generating power and high in power generation efficiency.

Provided is a multilayer ceramic capacitor capable of reducing stress.　A base electrode layer 32 of an external electrode 30 in this multilayer ceramic capacitor 10 includes an end surface electrode part 40 and a wraparound electrode part 41 that wraps around at least one among a first main surface 12a, a second main surface 12b, a first side surface 12c, and a second side surface 12d from a first end surface 12e and a second end surface 12f. The wraparound electrode part 41 includes base end side parts 42 positioned on the first end surface 12e and the second end surface 12f sides, and tip side parts 43 positioned on the tip sides of the base end side parts 42 away from the first end surface 12e and the second end surface 12f. At least one tip-side adhesion interface 53a where a laminate 12 is adhered to the tip side parts 43, and at least one tip-side non-adhesion interface 53b where the laminate 12 is not adhered to the tip-side parts 43, are included in tip-side interfaces 53 of the laminate 12 facing the tip-side parts 43.

The embodiment of the invention relates to the photovoltaic field, and provides a solar cell piece and a photovoltaic module, and the solar cell piece comprises a substrate; the doped conductive layer is positioned on one side of the substrate; the passivation layer covers the surface, away from the substrate, of the doped conductive layer; the electrodes comprise a plurality of bottom electrodes which are arranged at intervals in the first direction, and the bottom electrodes are electrically connected with the doped conductive layer; the top electrode extends in the first direction, the top electrode covers the surface of the bottom electrode, the surface, away from the substrate, of the top electrode is in a wave shape and comprises at least one wave crest and at least one wave trough, the wave trough of the top electrode directly faces the at least one bottom electrode, and the wave crest of the top electrode directly faces the interval of the at least one bottom electrode. The cost can be reduced, and the battery performance is ensured.

An acoustic wave device includes a piezoelectric layer with first and second major surfaces, an IDT electrode on at least one of the first and second major surfaces and including electrode fingers arranged in a predetermined direction, a support facing the second major surface and including an acoustic reflection portion on the second major surface side, and a load film in a region that, in plan view in a first direction, overlaps at least one end portion of the IDT electrode in the arrangement direction. The end portion includes a first electrode finger positioned outermost in the arrangement direction, and d / p is about 0.5 or less where d is a thickness of the piezoelectric layer and p is a center-to-center distance between adjacent ones of the electrode fingers.

A semiconductor light emitting device includes an edge-emitting element including emitters, a first front-surface electrode, a second front-surface electrode, first wires, and second wires. The emitters include a first emitter including a first element electrode, and a second emitter including a second element electrode. The first front-surface electrode is electrically connected to the first element electrode. The second front-surface electrode is electrically connected to the second element electrode. The first wires are electrically connecting the first element electrode to the first front-surface electrode. The second wires are electrically connecting the second element electrode to the second front-surface electrode. In plan view, a largest distance between adjacent ones of the second wires in the first direction is greater than a largest distance between adjacent ones of the first wires in the first direction.

The present invention relates to the technical field of microelectromechanical system manufacturing, and particularly relates to a micro-hemispherical gyro structure with a curved surface electrode and a preparation method thereof; the method includes coating the outer surface of a micro-hemispherical resonator, coating the inner and outer surfaces of the micro-hemispherical curved surface electrode and spraying photoresist; aligning a photomask plate with an optical lens structure with the inner surface of the micro-hemispherical curved surface electrode, performing photolithography and development to pattern the photoresist of the curved surface structure; using the photoresist as a mask to pattern the metal film on the micro-hemispherical curved surface electrode to form excitation detection electrodes, shielding electrodes, and anchor electrodes; coaxially aligning the micro-hemispherical resonator with the micro-hemispherical curved surface electrode, curing and conducting the resonator anchor points and the curved surface electrode anchor points, and fixing the reference surface of the outer edge of the curved surface electrode on a buffer plate to form a micro-hemispherical gyro structure with a curved surface electrode; the present invention can effectively reduce the process difficulty and cost of manufacturing the curved surface electrode and has better thermal adaptation performance.

A device and system for real-time visualization of the electrophysiologic activity of a brain, particularly at the cortical surface. The neural device can acquire, process, and display high-spatiotemporal-resolution electrophysiologic data in real-time across entire electrode arrays spanning many thousands of electrodes over identified anatomic regions. The system is compatible with thin-film cortical surface electrodes that record from neural tissues without damaging those tissues. The system can be used to guide diagnostic and therapeutic actions with high precision, and also provides the basis for a brain-computer interface.

The present invention relates to a high-speed, high-threshold acousto-optic modulator based on lithium niobate, belonging to the field of optoelectronics; the acousto-optic modulator comprises an acousto-optic medium, a bonding layer, a transducer and a surface electrode; the sound-transmitting surface of the acousto-optic medium is equipped with a transducer through the bonding layer, and the surface electrode is plated on the surface of the transducer; the acousto-optic medium is a lithium niobate crystal, the [100] axis of the lithium niobate crystal is perpendicular to the sound-transmitting surface of the acousto-optic medium, the [010] axis of the lithium niobate crystal is located within the sound-transmitting surface of the acousto-optic medium, and the angle between the [010] axis of the lithium niobate crystal and the incident light is 0.5°±0.3°. The present invention adopts lithium niobate crystal as the acousto-optic medium, improves the acousto-optic figure of merit of the lithium niobate crystal, and also improves the ability of the acousto-optic device to withstand high-power lasers; at the same time, the present invention also plates an anti-reflection film on the light-transmitting surface of the acousto-optic medium to improve the utilization rate of light energy by the acousto-optic device. Overall, the present invention can better meet the modulation requirements of high speed and high threshold.

A semiconductor device includes: an active region having a semiconductor element and a surface electrode provided by a wiring electrode material and connected to the semiconductor element on a side adjacent to a surface of a semiconductor chip; and a pad arrangement region having a pad provided by the wiring electrode material. The pad arrangement region overlaps the active region in a direction normal to the surface of the semiconductor chip. In a part where the pad arrangement region and the active region overlap, the pad is disposed on the surface electrode through an isolation insulating film so that the wiring electrode material is in two layers to provide a double-layer wiring electrode structure. In a part of the active region without overlapping the pad arrangement region, the surface electrode has a single-layer wiring electrode structure composed of a single layer of the wiring electrode material.

An acoustic wave device includes a piezoelectric layer including first and second main surfaces facing in a first direction, an IDT electrode on at least one of the first or second main surface and including electrode fingers arranged in an arrangement direction, a support facing the second main surface and including an acoustic reflection portion, and a protective film on at least one of the first or second main surface. In a region that overlaps, in plan view in the first direction, a first of the electrode fingers outermost in the arrangement direction, the protective film includes a surface of a first step where a side surface of the protective film is exposed in a direction intersecting an extending direction of the first electrode finger. When d is a thickness of the piezoelectric layer and p is a center-to-center distance between adjacent electrode fingers, d / p is about 0.5 or less.

The utility model relates to the technical field of photovoltaic cells, and discloses a selective passivation contact structure and a double-sided selective TOPCon cell. The selective passivation contact structure comprises a silicon wafer, the back surface of the silicon wafer is sequentially provided with a first tunneling oxide layer and first boron-doped polycrystalline silicon, and a back surface electrode contact region of the first boron-doped polycrystalline silicon is also provided with second boron-doped polycrystalline silicon; the thickness of the first boron-doped polycrystalline silicon is smaller than that of the second boron-doped polycrystalline silicon, the crystallization rate of the first boron-doped polycrystalline silicon is larger than that of the second boron-doped polycrystalline silicon, and the doping concentration of the first boron-doped polycrystalline silicon is larger than that of the second boron-doped polycrystalline silicon. The selective passivation contact structure can reduce parasitic absorption of light, reduce recombination and improve the passivation effect and the transverse transmission performance of carriers, so that the open-circuit voltage, the short-circuit current, the fill factor and the cell efficiency of the double-sided selective TOPCon cell can be further improved.

An acoustic wave device includes a piezoelectric layer including first and second main surfaces, an IDT electrode on one of the first and second main surfaces, and including electrode fingers, a support facing the second main surface, and including an acoustic reflection portion at a portion closer to the second main surface of the piezoelectric layer, and a load film extending over a region that overlaps, when viewed in plan in the first direction, at least electrode fingers from a fourth one of the electrode fingers from a first outer end in an arrangement direction to a fourth one of the electrode fingers from a second outer end in the arrangement direction. d / p is less than or equal to about 0.5 where d denotes a thickness of the piezoelectric layer, and p denotes a center-to-center distance between adjacent two of the electrode fingers.

The invention discloses a uterus electromyographic signal generation method based on a deep generative model, which comprises the following steps: 1, acquiring uterus electromyographic signals of the abdomen of a pregnant woman through a multi-channel surface electrode, and carrying out filtering, noise reduction and normalization preprocessing; 2, performing short-time Fourier transform on the preprocessed signal to obtain time-frequency representation, and decomposing the time-frequency representation into low-frequency and high-frequency components; 3, respectively establishing reconstruction processes of the low-frequency component and the high-frequency component, and obtaining discrete potential representation through training; 4, on the basis of an encoder and a decoder which are subjected to reconstruction training, modeling is conducted on the low-frequency discrete sequence and the high-frequency discrete sequence through a bidirectional Transform prior model, and potential space distribution of the low-frequency discrete sequence and the high-frequency discrete sequence is learned; and 5, in a generation stage, sampling through a priori model to obtain a token sequence, and generating a high-quality uterine myoelectricity signal after decoding and inverse short-time Fourier transform. The signal generated by the method has high authenticity and stability while maintaining the consistency of the time sequence characteristics and the frequency spectrum, and can be applied to uterine contraction monitoring and premature delivery risk prediction.

A semiconductor device includes a semiconductor substrate having a principal surface and a rear surface opposite to the principal surface, a main electrode formed on the principal surface of the semiconductor substrate, a gate electrode formed in the principal surface side of the semiconductor substrate, and a rear surface electrode formed on the rear surface of the semiconductor substrate, wherein the semiconductor substrate includes a drift layer, a low resistance region formed in the rear surface side of the drift layer and being lower in resistance than the drift layer, a high resistance region formed in the rear surface side of the low resistance region and being higher in resistance than the drift layer, and a buffer layer formed in the rear surface side of the high resistance region and containing phosphorus, and the high resistance region is thicker than the low resistance region.

The invention relates to a high-voltage SiC power device and a manufacturing method thereof in the technical field of semiconductors, the high-voltage SiC power device comprises a surface electrode, a terminal area and a passivation structure arranged on the terminal area, the passivation structure is in contact with the surface electrode, and the passivation structure extends from the surface of the terminal area to an exposed surface area between the surface electrode and a scribing channel. The passivation structure is arranged in a non-planar mode, the creepage path of the passivation structure is larger than the distance between the surface electrode and the scribing channel, and the problems that a passivation layer of an existing terminal structure is limited by a two-dimensional plane, and partial discharge initial voltage and long-term reliability are difficult to improve on the premise that the chip size is not increased are solved.

An atomic object confinement apparatus includes a substrate comprising a plurality of vias; a plurality of segmented electrodes disposed on a surface of the substrate and in electric communication with respective vias of the plurality of vias; and a patterned component (e.g., metasurface, diffractive optical element, alignment marks) formed on an electrode surface of a segmented electrode of the plurality of segmented electrodes.

To provide an IGBT (Insulative Gate Bipolar Transistor) which can reduce turn-on power loss and perform screening of a gate insulator.SOLUTION: An insulative gate bipolar transistor comprises: a gate trench 7a which extends in a specified extension direction set in advance in a plane view; a first insulator film 8a which is arranged at a bottom face of the gate trench 7a and at least a part of lateral face; a bottom gate conductive component 9a which is embedded in the gate trench 7a through the first insulator film 8a; a first split insulator film 10a which is arranged on the bottom gate conductive component 9a; an upper gate conductive component 11a which is embedded in the gate trench 7a through the first split insulator film 10a; a gate surface electrode 16 which is overlapped with one end of the gate trench 7a in the extension direction; a first contact hole 13c which electrically connects the gate surface electrode 16 with the bottom gate conductive component 9a; and a second contact hole 13a which electrically connects the gate surface electrode 16 with the upper gate conductive component 11a.SELECTED DRAWING: Figure 1

The invention discloses a surface acoustic wave filter and a forming method of the surface acoustic wave filter, and the surface acoustic wave filter comprises a substrate which comprises a base and a piezoelectric layer located on the base, the substrate comprises an interdigital region, a connection region and a spacer region located between the connection region and the interdigital region, and the interdigital region, the connection region and the spacer region are arranged along a first direction; the electrode layer is located on the partial surface of the side, away from the substrate, of the piezoelectric layer, the electrode layer comprises a plurality of interdigital electrodes located on the surface of the interdigital area, and the interdigital electrodes are arranged in parallel in the second direction; each interdigital electrode comprises an interdigital part and buffer parts located at the two ends of the interdigital part, each buffer part comprises a first part and a second part located between the first part and the interdigital part, the size of the first part in the second direction is larger than that of the interdigital part in the second direction, and the size of the second part in the second direction is gradually reduced from the first part to the interdigital part. Through the arrangement of the mass block in the technical scheme, the capability of suppressing a transverse mode and clutters can be improved.

The invention provides a light-emitting device, an optical device, and an information processing device, in which a drive element and a light-emitting element array are easier to approach compared with a configuration in which a circuit element is provided on the drive element side of the light-emitting element array. The light-emitting device includes: a wiring substrate; a light-emitting element array provided on the wiring substrate, the light-emitting element array having a first side surface and a second side surface facing each other, and a third side surface and a fourth side surface facing each other and connecting the first side surface and the second side surface; a driving element which is provided on the wiring substrate on the first side surface side and drives the light-emitting element array; a first circuit element and a second circuit element arranged side by side in a direction along the second side surface on the wiring substrate on the second side surface side; and a wiring member provided on the third side surface side and the fourth side surface side and extending from an upper surface electrode of the light-emitting element array toward the outside of the light-emitting element array.