67 results about "Surface electrode" patented technology

Provided are: a thin film type temperature sensor in which a heat-sensitive thin film is formed on a part of the front surface of a substrate, and which has good responsiveness, can also provide accurate temperature measurement, and is particularly suitable for application to surface-mounted devices; and a temperature sensing structure employing the same.　In the temperature sensor, a heat-sensitive thin film is formed on a part of the front surface of a substrate. The temperature sensor includes an electrode set, the set comprising a pair of front surface electrodes and a pair of rear surface electrodes that are formed respectively on the front surface and the rear surface of the substrate and that oppose one another across the substrate at the periphery of the heat-sensitive thin film, pass-through electrodes that electrically connect the front surface electrodes and the rear surface electrodes, and connecting electrodes that are formed on the front surface and that electrically connect the heat-sensitive thin film and the front surface electrodes, wherein the heat-sensitive thin film and the connecting electrodes are formed such that the heights thereof are equal to or less than the height of the front surface electrodes in a heat-sensitive portion region of the front surface including, on the inside of said region, at least the front surface electrodes, the heat-sensitive thin film, and the connecting electrodes. Furthermore, in the temperature sensing structure, the temperature sensor is interposed between a main substrate and an electronic component.

A semiconductor module comprises: a first frame connected to a bottom surface electrode of a first semiconductor chip and having a first terminal protruding from the semiconductor module; a second frame connected to a top surface electrode of a second semiconductor chip and having a second terminal protruding from the semiconductor module; a third frame connected to the top surface electrode of the first semiconductor chip and the bottom surface electrode of the second semiconductor chip, and having a third terminal protruding from the semiconductor module; and fourth and fifth terminals connected to gate electrodes of the first and second semiconductor chips and protruding from the semiconductor module.The semiconductor module comprises at least either first opposing sub-areas parallel to a current flow direction in the second and third frames or second opposing sub-areas parallel to the current flow direction in the first frame of one of the neighboring semiconductor chip groups and the second frame of the other of the neighboring semiconductor chip groups.

A SiC semiconductor device is provided that can improve the detection accuracy of the main current value of the current sensing unit by suppressing the escape of heat from the current sensing unit to the wiring material bonded to the sensing side surface electrode. A semiconductor device (1) is provided, the semiconductor device (1) comprising: a SiC semiconductor substrate, a source portion (27) including a main current side unit cell (34), a current sensing unit (26) including a sensing side unit cell (40), a source side surface electrode (5) disposed above the source portion (27), and a sensing side surface electrode (6) disposed above the power sensing unit (26) and having a sensing side pad (15) bonded to a sensing side line, wherein the sensing side unit cell (40) is disposed at a position avoiding the direct lower portion of the sensing side pad (15).

This application relates to the photovoltaic field, providing a solar cell and its fabrication method, a tandem solar cell, and a photovoltaic module. The solar cell includes a substrate; a tunneling dielectric layer located on the surface of the substrate; a doped conductive layer located on the surface of the tunneling dielectric layer; a fluorinated silicon oxide layer located on the surface of the doped conductive layer, the fluorinated silicon oxide layer having a mesoporous structure; a passivation layer located on the surface of the fluorinated silicon oxide layer; and an electrode electrically connected to the doped conductive layer. The solar cell, its fabrication method, the tandem solar cell, and the photovoltaic module provided by this application can at least improve the PID (Potential Influence of Processing) problem.

One objective is to provide a technique suitable for suppressing thermal deformation occurring in a front-side electrode of a semiconductor device. A semiconductor device comprises a semiconductor layer, a front-side electrode provided on a front surface of the semiconductor layer, a front-side bonding layer selectively provided on a front surface of the front-side electrode, a conductor frame, and a front-side bonding material. The conductor frame is located on one side of a front surface of the front-side bonding layer, and the front-side bonding material connects the conductor frame and the front-side bonding layer.The elastic modulus of the element front surface bonding material is 20% or less than the elastic modulus of the front surface electrode.

A manifold is provided, which is connected to an electrode tab disposed at one of two ends of an electrode assembly in the axial direction, wherein the end is inserted into the can when facing the bottom of the can. The manifold includes: a terminal engagement portion having a side surface that engages with a cap, the bottom of the can, or an electrode terminal; an electrode engagement portion surrounding the terminal engagement portion in the radial direction and having another side that connects to the electrode tab of the electrode assembly; a resilient connection portion disposed between the electrode engagement portion and the terminal engagement portion, and electrically connecting the electrode engagement portion and the terminal engagement portion; and an opening disposed between adjacent resilient connection portions in the circumferential direction, and separating the electrode engagement portion and the terminal engagement portion in the radial or axial direction.

A conductive aluminum paste composition is disclosed, including an aluminum-silicon alloy powder, an organic vehicle, and a glass powder, in which (1) the aluminum-silicon alloy powder has a silicon concentration of 30 mass % or more and 40 mass % or less, and (2) the glass powder contains a first glass powder and a second glass powder. The first glass powder contains 45% or more and 71% or less of PbO, 5% or more and 35% or less of B2O3, and 0.1% or more and 25.0% or less of SiO2 in terms of oxide mol %, and the second glass powder contains 35.0% or more and 55.0% or less of B2O3, 5.0% or more and 10.0% or less of SiO2, 1.0% or more and 20.0% or less of BaO, 5.0% or more and 25.0% or less of CaO, and 3.0% or more and 30.0% or less of K2O in terms of oxide mol %.

A semiconductor light-emitting device includes: a substrate; front-surface electrodes; back-surface electrodes; a semiconductor light-emitting element; a first drive circuit; and a second drive circuit. The substrate includes a substrate front surface, and a substrate back surface. The front-surface electrodes are formed on the substrate front surface. The back-surface electrodes are formed on the substrate back surface and configured for mounting the semiconductor light-emitting device. The semiconductor light-emitting element includes a first light emitter and a second light emitter. The first drive circuit is configured to drive the first light emitter. The second drive circuit is configured to drive the second light emitter. The semiconductor light-emitting element, the first drive circuit, and the second drive circuit are mounted on the front-surface electrodes.

This solar battery cell (1) comprises: a cell body (10); a bypass diode (20); an interconnector (21) that electrically connects the cell body (10) and the bypass diode (20); and a cover glass (40) that covers light-receiving surfaces of the cell body (10) and the bypass diode (20). One end (21a) of the interconnector (21) is welded to the bypass diode (20), the other end (21b) of the interconnector (21) is welded to an opposite surface electrode (14) on the opposite surface to the light-receiving surface of the cell body (10), the cell body (10) is provided with a stress buffering part (13) at a portion of the light-receiving surface corresponding to a welded portion at which the other end (21b) of the interconnector (21) is welded on the opposite surface, and the stress buffering part (13) has the same height as a front surface electrode (grid line) (11) provided on the light-receiving surface of the cell body (10).

Provided is a semiconductor light-receiving element having low dark current despite having an optical filter, and a method for manufacturing the semiconductor light-receiving element. A semiconductor light-receiving element according to the present disclosure comprises a substrate, a semiconductor laminate having a light-receiving part, and an upper surface electrode, the upper surface electrode having a frame-shaped electrode and a pad electrode connected to a part of the frame-shaped electrode, the frame-shaped electrode being disposed so as to surround the light-receiving part of the semiconductor laminate in a top view, the light-receiving element having an optical filter that covers the entire surface on the semiconductor laminate and the frame-shaped electrode excluding an outer connection surface of the pad electrode, and the resistivity of the optical filter being 3.0 × 1012 Ωμm or greater.

A rechargeable battery includes: an electrode assembly including a first electrode, a second electrode, a separator between the first and second electrodes, and first and second electrode tabs respectively coupled to the first and second electrodes; a case accommodating the electrode assembly and coupled to the first electrode tab; and a cap assembly sealing an opening in the case. The cap assembly includes: a cap plate covering the opening in the case; and a terminal plate coupled to the cap plate. The terminal plate includes: a flange portion coupled to and electrically insulated from the cap plate; and a tab connecting portion protruding from the flange portion toward the electrode assembly and extending through a terminal opening in the cap plate to be coupled to the second electrode tab. The terminal plate has a flat outer surface, and the tab connecting portion has a flat inner surface.

An acoustic wave device includes a support substrate including a top surface and a bottom surface and a cavity or air gap, a piezoelectric layer on the support substrate and including a top surface and a bottom surface, and an electrode on the top surface of the piezoelectric layer and including a top surface and a bottom surface. At least a portion of the electrode is over the cavity or air gap and satisfies the equation 0.002Tg ≤ 0.5(Lb - Ls) < Te, where Ls is a maximum length of the top surface of the electrode, Lb is a maximum length of the bottom surface of the electrode, Tg is a distance between the top surface of the piezoelectric layer and the top surface of the support substrate, and Te is a thickness of the electrode.

The application discloses a method and system for detecting weak signals and harmonics based on compression-enhanced stochastic resonance, comprising a vacuum system, a trapped field, a laser system, a fluorescence collection system and an external signal; the vacuum system comprises a vacuum cavity, an ion pump and a suction pump, a calcium atom furnace and a surface electrode ion trap for trapping calcium ions are arranged in the vacuum cavity; the trapped field comprises a radio frequency trapped field and a direct current trapped field, the radio frequency trapped field is composed of a radio frequency signal source, a power amplifier and a spiral resonant cavity; the direct current trapped field comprises a direct current high-voltage power supply, a 6733 board card and an amplification chip; the fluorescence collection system comprises an imaging mirror, a CCD camera and a photomultiplier tube; the external signal comprises a driving signal, a compression signal and a signal to be detected. The application uses the compression signal to replace the external random noise, triggers the ion to have periodic phase change with the signal to be detected, changes the intensity of the compression signal, makes the signal to be detected and the bistable system reach the best matching, and maximizes the signal-to-noise ratio and the detection of harmonics.

The present application relates to a kind of based on motor imagination trigger's electric stimulation synchronous closed loop multimodal neuroregulation system, belong to medical rehabilitation engineering and neural engineering technical field.The system includes: electroencephalogram signal acquisition and processing module, for real-time acquisition user sensory motor cortex electroencephalogram signal, and extract the event-related desynchronization features of motor imagination task in the electroencephalogram signal by time-frequency analysis model;Motor intention recognition and trigger module generates synchronous trigger signal;Functional electric stimulation module, through multi-channel electrode device drive surface electrode output electric stimulation pulse to target area, drive target action;Transcutaneous auricular vagus nerve electric stimulation module, output and motor intention duration synchronous stimulation pulse;Central control and synchronization module, for coordination control timing.Formed " intention recognition-synchronous control-assisted movement" complete closed loop, provides a kind of efficient, accurate, individualized neural engineering solution.

Included in a semiconductor module are: a first frame that is connected to a lower-surface electrode of a first semiconductor chip; a second frame that is connected to an upper-surface electrode of a second semiconductor chip; a third frame that is connected to the upper-surface electrode of the first semiconductor chip and the lower-surface electrode of the second semiconductor chip; and fourth and fifth terminals that are connected to gate electrodes of the first and second semiconductor chips, and protrude from the semiconductor module. The semiconductor module has at least either first opposing portions parallel to a current-flowing direction in the second and third frames, or second opposing portions parallel to the current-flowing direction in the first frame of one of adjacent semiconductor chip groups and the second frame of the other one of the adjacent semiconductor chip groups.

In a semiconductor device, a semiconductor element having a plurality of gate electrodes including a first gate electrode and a second gate electrode. An electrical connection member is electrically connected to a front surface electrode of the semiconductor element. A cell region of the semiconductor element includes a first cell region that allows a current to flow between the front surface electrode and a back surface electrode when the first gate electrode is applied with a voltage, and a second cell region that allows a current to flow between the front surface electrode and the back surface electrode when the second gate electrode is applied with a voltage. The semiconductor element and a control circuit are configured to generate a time difference in cutting off the current between the first cell region and the second cell region.

This application discloses a cylindrical battery, a battery module, and an electrical device. The cylindrical battery includes a housing, an electrode assembly, an end cap assembly, and an insulating member. The housing includes a bottom wall and a side wall. The side wall includes a side wall body and a first protrusion. The side wall body is connected to the bottom wall, and the first protrusion protrudes from the inner surface of the side wall body. The electrode assembly is housed within the housing. The bottom wall and the end cap assembly are arranged axially along the cylindrical battery, and the end cap assembly is insulated from the side wall. Along the axial direction, at least a portion of the first protrusion is located between the electrode assembly and the end cap assembly. The insulating member includes a first insulating portion and a second insulating portion, the thickness of the first insulating portion being greater than the thickness of the second insulating portion. In the radial direction of the cylindrical battery, at least a portion of the first insulating portion is located inside the first protrusion. Along the axial direction, at least a portion of the first insulating portion is clamped between the electrode assembly and the end cap assembly, and at least a portion of the second insulating portion is clamped between the electrode assembly and the first protrusion.

This utility model relates to the field of couplers with external resistors, and discloses a coupler with an external resistor, including a coupler body and a resistor body. The resistor body is placed on the surface of the coupler body, and the surface of the coupler body is provided with a mounting structure. The mounting structure includes two brackets, both of which are fixedly connected to the surface of the coupler body. A pin is slidably inserted into the surface of the bracket. This external resistor coupler, by setting the mounting structure, achieves good contact between the electrode plate and the resistor body by using a pressure plate to push the electrode plate against the pin surface of the resistor body. The other end of the transmission line electrically connected to the surface of the electrode plate is electrically connected to the coupler body, thereby ensuring the connection between the resistor body and the coupler body. The connection is made by pressing, which facilitates the replacement of the resistor body and avoids damage to the coupler body when disassembling the resistor body.

This disclosure provides an electrode patch and a monitoring system. The electrode patch includes an electrode layer, an adhesive layer, and a conductive unit. The electrode layer includes an electrode and a flexible circuit board. The flexible circuit board has a first surface, and the electrode is disposed on the first surface and electrically connected to the flexible circuit board. The adhesive layer is disposed on the first surface of the flexible circuit board for adhesion to human skin. A first through-hole is provided in the adhesive layer at a position opposite to the electrode. The conductive unit includes a porous carrier and a conductive material filling the pores of the porous carrier. The porous carrier is disposed in the first through-hole and is in electrical contact with the electrode. The porous carrier can be used as a carrier for the conductive material to confine the conductive material and prevent the conductive material from accidentally scattering or overflowing from the first through-hole, thereby improving the reliability of the conductive unit to a certain extent.

An electronic device includes: a substrate with obverse and reverse surfaces spaced apart in a thickness direction; an electronic element having an obverse surface formed with a first obverse surface electrode; a wiring portion on the substrate obverse surface and configured to transmit a control signal for the electronic element; a conduction member with obverse and reverse surfaces spaced apart in the thickness direction, where the reverse surface is joined to the wiring portion; a conductive first lead on the substrate obverse surface; and a first connecting member joined to the obverse surface of the conduction member and the first obverse surface electrode. The first lead includes a first pad portion spaced apart from the wiring portion and to which the electronic element is joined. The wiring portion and the first obverse surface electrode are electrically connected to each other via the conduction member and the first connecting member.

A silicon carbide semiconductor device includes a starting substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, a first semiconductor region of the first conductivity type, a gate insulating film, a gate electrode, an interlayer insulating film, an ohmic electrode, a barrier metal provided at the surface of the ohmic electrode and the surface of the interlayer insulating film, a surface electrode provided at the surface of the barrier metal, and a back electrode. The barrier metal has a three-layered structure including a first TiN film, a Ti film, and a second TiN film; the first TiN film contains TiN having a crystal grain size that is larger than a crystal grain size of TiN of the second TiN film.

This invention belongs to the field of quartz resonator technology, specifically to a high-frequency quartz resonator wafer and its manufacturing process. It includes a wafer body with grooves on both sides. A vibration electrode is positioned at the center of the bottom of each groove, and the vibration electrode is connected to a surface electrode via wiring. The surface electrode is connected to an electrode excitation area. This invention provides two manufacturing processes for electrodes made of different materials: the first uses a photolithography-etching-sputtering micro-nano fabrication process to manufacture a high-frequency quartz resonator wafer with gold-chromium composite electrodes. The second method, based on the first, modifies the electrode material system and deposition method, using a solution deposition method with multi-component composite electrode ink. The quartz resonator wafer prepared by this invention can achieve frequencies exceeding 200MHz and can be easily packaged.

The application belongs to the technical field of liquid crystal lens and relates to a liquid crystal Fresnel lens and an electronic product. The application provides a liquid crystal Fresnel lens, which comprises a first substrate, a first electrode layer, a first orientation layer, a liquid crystal layer, a second orientation layer, a second electrode layer and a second substrate arranged in sequence; the first electrode layer is a surface electrode; the second electrode layer comprises a plurality of electrode units arranged in sequence from the center to the edge of the second electrode layer; the electrode unit comprises a first potential distribution line and a second potential distribution line; the first potential distribution line is provided with a first position and a second position, and the second potential distribution line is provided with a third position and a fourth position; and the application can significantly improve the optical effect of the liquid crystal Fresnel lens.

The application discloses a fan-out type packaging anti-radiation power MOS device, which comprises a chip, a first redistribution layer and a second redistribution layer arranged on the front surface of the chip and electrically connected with a gate and a source respectively, a third copper electrode connected with the back surface of the chip through sintering silver paste, a ceramic base connected with the third copper electrode away from the chip through sintering silver paste, a first copper electrode and a second copper electrode electrically connected with the first and second redistribution layers respectively, and a plastic sealing layer for sealing the chip and the side surface of the ceramic base. The front surface electrode of the chip is vertically led out through the fan-out type RDL, and the back surface drain electrode is vertically led out through sintering silver paste, and the device does not contain a bonding wire. The structure effectively reduces the packaging parasitic parameters, greatly reduces the packaging volume, the ceramic base provides back surface heat dissipation and insulation support, and is suitable for high-power power supply systems in a strong radiation environment such as a spacecraft.

A high-temperature resistant resistor is provided and includes a substrate layer, a first surface electrode layer, and a second surface electrode layer. The first surface electrode layer is disposed on a first surface of the substrate layer, the resistance layer partially attaches the first electrode layer and the substrate layer, the second surface electrode layer is aligned with the first surface electrode layer, and attached on the first surface electrode layer and the resistance layer, so that the resistance layer is fixed between the first electrode layer and the second electrode layer. The first surface electrode layer, the resistance layer and the second surface electrode layer form a composite structure to suppress the change in resistance value of the high-temperature resistant resistor at high temperatures.

To provide a new technology that can suppress wrinkles and other issues in the current collector foil that occur during charging and discharging. [Solution] The secondary battery comprises a first current collector foil, a first electrode layer disposed on the first current collector foil, an electrolyte layer disposed on the first electrode layer, a second electrode layer disposed on the electrolyte layer, and a second current collector foil disposed on the second electrode layer. The first electrode layer has an intermittent electrode layer disposed on the first current collector foil and a full-surface electrode layer disposed on the intermittent electrode layer and in contact with the electrolyte layer. In the intermittent electrode layer, the constituent material of the first electrode layer is intermittently arranged so as to be divided into a plurality of intermittent electrode portions that are separated from each other. In the full-surface electrode layer, the constituent material of the first electrode layer is disposed over the entire surface.

This invention discloses an ionized flexible pressure sensor, its fabrication method, and its application. The sensor includes a first electrode layer, a second electrode layer, a PDMS ion-dielectric elastomer, and metal leads. Each electrode layer consists of a PI thin film and surface electrodes. The PDMS ion-dielectric elastomer layer is located between the first and second electrode layers, and is composed of a porous PDMS elastic framework. A composite formed by an ionic liquid and polyvinylidene fluoride (PVDF) is loaded within the pores of this framework. This invention utilizes an in-situ composite process to load the ionic liquid-PVDF composite within the porous PDMS elastic framework, achieving a stable bond between the ionic liquid and the porous PDMS elastic framework. This avoids migration or leakage of the ionic liquid during use, thus providing an ionized flexible sensor with high sensitivity, a wide pressure response range, and strong stability.