202 results about "Halide" patented technology

A solid electrolyte material can include a halide material represented by Li3−x−fMfRE1−yMeky(Cl1−u−p−qBruFpIq)6−x+y*(k−3), wherein the halide material includes at least two halide anions. The halide material can include reduced content of one or more impurity phase, including binary halide phase, oxyhalide phase, or ternary halide phase.

The invention discloses a solid electrolyte with high ionic conductivity, which comprises the following components: a matrix material: a halide super ion conductor with a LiMXCl4 structure, M being selected from at least one of Ta, Nb and Hf, X being O or F, a chemical general formula being LiM1-aX1-6Cl4, a being equal to 0.1-0.3, and an electrochemical window being regulated to 2.5-4.0 V through fluorine-chlorine mixed anion substitution; the second phase material is a core-shell structure compound, the core is Li3TiCl6, and the shell is a Li3PS4 interface layer; and the sintering aid is a compound of Li3BO3 and LiF. Through fluorine-chlorine mixed anion regulation and control and MO2Cl4 octahedron synergistic tilting mechanism, the ionic conductivity of the solid electrolyte is remarkably improved, the lithium ion conductivity at room temperature is greater than or equal to 10mS / cm, the activation energy is less than or equal to 0.2 eV and is superior to that of the traditional halide electrolyte, and meanwhile, the free volume between chains is optimized through Zr < 4 + > / Sn < 2 + > gradient doping, so that the performance of the solid electrolyte is improved. The core-shell structure compound and the silane coupling agent are combined for modification, so that the electrochemical window is effectively widened to 2.5-4.0 V, the interface side reaction is inhibited, and the composite material is adaptive to a high-voltage positive electrode material.

The invention discloses a polyanion halide solid electrolyte material as well as a preparation method and application thereof. The chemical formula of the halide solid electrolyte material is Li < 3 > YCl < 6-2x > Br < x > I < x >, wherein 0 < x < 3. The chemical formula of the halide solid electrolyte material is Li < 3 > YCl < 5.8 > Br < 0.1 > I < 0.1 >, Li < 3 > YCl < 5.6 > Br < 0.2 > I < 0.2 >, Li < 3 > YCl < 5.4 > Br < 0.3 > I < 0.3 >, Li < 3 > YCl < 5.2 > Br < 0.4 > I < 0.4 >, Li < 3 > YCl < 5.0 > Br < 0.5 > I < 0.5 >, Li < 3 > YCl < 4.8 > Br < 0.6 > I < 0.6 >, Li < 3 > YCl < 4.6 > Br < 0.7 > I < 0.7 >, Li < 3 > YCl < 4.4 > Br < 0.8 > I < 0.8 >, Li < 3 > YCl < 4.2 > Br < 0.9 > I < 0.9 >, Li < 3 > YCl < 4.0 > The invention provides a series of Li3YCl6-2xBrxIx by taking economical and efficient Li3YCl6 as a main body and combining with an anion mixing strategy, the Li3YCl6-2xBrxIx has high ionic conductivity of 1.98 mS cm <-1 > and low activation energy of 0.257 eV, and has good compatibility with a Li4Ti5O12 (LTO) positive electrode and a Li-In alloy negative electrode. The construction of the anion mixed state not only can reduce the binding effect of an anion frame on Li < + > migration and improve the ionic conductivity, but also can soften anion crystal lattices and reduce the activation energy. More importantly, due to the introduction of I <->, a LiI self-limiting passivation interface layer is generated in situ, so that the stability of a Li interface is enhanced.

The invention discloses a halide-assisted single-crystal-morphology high-nickel ternary layered positive electrode material and a preparation method thereof. The chemical formula of the material is shown in the specification. Li < 1-alpha > Ni < x > Co < y > Mn < z > A < alpha > O < 2-beta > X < beta >, 1, 0lt; y is less than or equal to 0.2, 0lt; z < = 0.2, 0lt; alpha is less than or equal to 0.05, 0lt; beta is less than or equal to 0.05, x + y + z = 1, A is at least one of Li, Na, K, Rb and Cs, X is at least one of F, Cl, Br and I, and the material has a monodisperse morphology. The temperature rise time of the low-temperature section is prolonged by controlling the temperature rise rate of the multiple sintering stages, the halide salt with the low melting point is introduced in the sintering process, adhesion and agglomeration of single crystal particles are reduced, the structural stability of the material is enhanced, and the electrochemical performance of the material is improved.

The invention discloses a cuprous halide complex high-entropy luminescent material as well as a preparation method and application thereof. In the cuprous halide complex high-entropy luminescent material, cuprous halide is coordinated with phosphorus on a diphenylphosphine group and nitrogen on pyridine, and an electron donating group is connected to a benzene ring; an electron-donating group is connected to a benzene ring, an intramolecular donor-acceptor structure is realized, and regulation and control of a charge transfer path and disorder degree are realized by regulating the type and position of the electron-donating group on the benzene ring, so that the light-emitting color and efficiency are regulated and controlled.

Disclosed is an oxygen scavenger composition including iron powder, activated carbon, water, a halide of an alkaline earth metal, and an alkaline substance, in which a content of the activated carbon is 20 parts by mass or more and 40 parts by mass or less with respect to 100 parts by mass of a content of the iron powder, a content of the water is 230 parts by mass or more and 370 parts by mass or less with respect to 100 parts by mass of the content of the activated carbon, and a content of the halide of the alkaline earth metal is 50 parts by mass or more and 65 parts by mass or less with respect to 100 parts by mass of the content of the water.

The invention relates to a rare earth halide solid electrolyte and a preparation method and application thereof, the rare earth halide solid electrolyte has a crystal phase structure, and the composition general formula of the rare earth halide solid electrolyte is Li < 3 + y > MX < 6-y > Oy. ZLi2O, wherein M is a rare earth element, and X is a halogen element, 0 lt; y is less than or equal to 0.4, 0lt; and z < = 0.6. The rare earth halide solid electrolyte disclosed by the invention has relatively high room-temperature ionic conductivity and relatively good electrochemical stability, can be compatible with a lithium metal negative electrode, and has a relatively great application prospect in an all-solid-state lithium metal solid-state battery.

The invention discloses a method for dehalogenation reduction of electron-rich aryl halide, which comprises the following step: by taking aryl halide as a raw material, carrying out heating reaction in the presence of phosphorous acid, elemental iodine and a solvent to prepare a corresponding aromatic compound. According to the method, the defect that expensive transition metal catalysts and equivalent metal reagents need to be used for participation in current mainstream methods is directly avoided, the electron-rich aryl halide is subjected to one-step dehalogenation reduction to obtain the corresponding aromatic hydrocarbon by taking low-cost, low-toxicity and relatively stable phosphorous acid as a reducing agent and taking the iodine elementary substance as a catalyst, and the method has the advantages of no metal participation, simple operation, low cost and the like. The method has the advantages of simple operation, low cost, environmental protection and the like, avoids the use of a metal reagent and the limitation that special equipment is not easy to amplify production, after the phosphorous acid reaction is finished, byproducts are generally phosphoric acid and corresponding phosphorus salts thereof and can be quickly removed by washing, the post-treatment is simple, and the method is beneficial to industrial production.

The invention relates to the technical field of photochromism, in particular to a preparation method of double perovskite halide Cs2AgInCl6 doped Mn < 2 + > ion photochromic powder, and the preparation method of the white photochromic powder comprises the following steps: S1, weighing: weighing required amounts of AgCl and InCl3 on an analytical balance; s2, a MnCl2. 4H2O solution with the concentration of 1 mol / L is prepared, and the amount of the needed MnCl2. 4H2O solution is calculated according to different doping amounts; and S3, firstly proportioning AgCl, InCl3 and MnCl2. 4H2O solutions, heating, stirring and reacting in hydrochloric acid until the solutions are dissolved, stirring for 10 minutes, then adding CsCl, heating and stirring for 20 minutes, and centrifugally drying to obtain a sample. According to the invention, a chemical synthesis method is utilized, and manganese ions are doped in double perovskite halide Cs2AgInCl6, so that an obvious photochromic phenomenon is realized; the photochromic performance is regulated and controlled through an experimental method and the Mn < 2 + > doping concentration. And meanwhile, the exploration range of the inorganic halide photochromic material and the application range of the double perovskite halide are expanded.

Methods and systems for the controlled production of aqueous halogen solutions with varying compositions are disclosed. According to an embodiment, aqueous solutions of hypochlorite ions are modified through the sequential addition of pH adjusting chemicals, non-chloride halide ions, and halogen stabilizing compounds. Sensors, for measuring physical and chemical properties of the solutions as they change due to the impact of the various chemical reactions, are linked to a control system which, in turn, can control the input of one or more chemicals. The control system facilitates the production of a solution with desired characteristics in terms of pH, specific halogen composition, degree of halogen stabilization, and limiting the production of undesired by products such as bromate ions.

Contacting an inner surface of a petrochemical or refinery process vessel (optionally a metal) with a halide or halide-containing compound wherein at least a portion of the halide is coupled to the inner surface due to shrinkage; and releasing at least a portion of the halide coupled to the inner surface via contacting the inner surface with hydrogen.

The objective of the present invention is to provide a method for producing a carbonyl halide safely and efficiently. The method for producing a carbonyl halide according to the present invention is characterized in comprising the step of irradiating a light to a halomethane having 1 or more halogeno groups selected from the group consisting of chloro, bromo and iodo in the presence of oxygen and ozone.

The invention discloses a circularly polarized light-emitting metal organic framework material as well as a preparation method and application thereof, and belongs to the technical field of organic light-emitting materials. The preparation method of the metal organic framework material comprises the following steps: adding zinc halide, alkaline earth metal salt, 2, 5-dimethylimidazole-4-formaldehyde and chiral cyclohexanediamine into a solvent, and heating for reaction to obtain the metal organic framework material. The prepared metal organic framework material is a chiral metal organic framework material internally containing a spiral chain, has high crystallinity and excellent circular polarization luminescence performance, the luminescence asymmetry factor (glum) and the fluorescence quantum yield (phi PL) of the metal organic framework material can be regulated, controlled and optimized by doping alkaline earth metal salt, and the operation is very flexible.

To provide materials and methods for mitigating the effects of halide species contained in a process stream.SOLUTION: The halide-containing process stream may be contacted with an abatement material combined with a solid, porous substrate comprising an active metal oxide and a non-acidic, high surface area support. The halide species in the process stream may react with the abatement material to produce a process stream that is essentially free of neutralized halide salts and halides. The neutralized salt can be attracted to and retained on the solid porous substrate.SELECTED DRAWING: Figure 1

The invention belongs to the field of perovskite devices, and particularly discloses a bromine-chlorine mixed blue-light perovskite thin film, a preparation method and a perovskite LED device. The bromine-chlorine mixed blue-light perovskite thin film is prepared from the following raw materials: cesium halide, lead bromide, lead chloride and alkaline earth metal bromide; the alkaline earth metal bromide comprises at least one of calcium bromide, strontium bromide and barium bromide; the ratio of the mole number of the alkaline earth metal bromide to the total mole number of Pb in lead bromide and lead chloride is not greater than 0.5. The bromine and chlorine mixed blue light perovskite is doped by adopting the alkaline earth metal bromide with a low-solubility perovskite phase, and the molar ratio of the doping amount of the alkaline earth metal bromide is not higher than 0.5, so that the nonuniform bromine and chlorine distribution of the blue light perovskite thin film in the film forming process is improved, the halogen separation under an electric field is inhibited, and the spectral stability is improved; by directly doping in the precursor, the preparation process is simple, and the method is suitable for large-scale industrial production.

The present invention provides a thin film comprising a perovskite halide represented by chemical formula 1.AB(BrxCly)3   [Chemical formula 1]wherein, A is a monovalent cation consisting of a combination of NH2CHNH2+ (formamidinium, FA), CH3NH3+ (methyl ammonium, MA) and Cs+, wherein FA is included in an amount of 0.2-0.8 moles with respect to 1 mole of the monovalent cation, B is at least one divalent cation selected from Pb2+, Sn2+, Ge2+, Ti2+, Zr2+, Mn2+, Ni2+, Fe2+, Zn2+and Cu2+, and x and y satisfy 0.5≤x≤0.8, 0.2≤y≤0.5, and x+y=1.

The present invention provides a novel dibenzothiophenium salt compound and a method for producing the same. The present invention also provides a photoacid generator containing the dibenzothiophenium salt compound, a resist composition containing the photoacid generator, a method for forming a resist pattern using the resist composition, and the like. The present invention relates to a compound represented by chemical formula (I), a photoacid generator containing the compound, a resist composition containing the photoacid generator, and a method for forming a resist pattern using the resist composition. (In the formula, R1 and R2 are the same or different and each represent a hydrogen atom, a halogen atom, -CF3, -SO2R3, an alkyl group having 1-10 carbons, -OH, a polymerizable group selected from formula (S-1) to formula (S-4), or an acid-reactive group selected from formula (R-1) to formula (R-7). R3 represents -CF3, -CF2CF3, an alkyl group having 1-10 carbons, or a phenyl group. [A]- represents a trifluoromethanesulfonic acid anion (TfO-) or a halide ion.) (In the formulae, R1a represents a hydrogen atom or a methyl group, and Y represents a single bond or an alkylene group having 1-3 carbons.) (In the formulae, Y is as described above. R51 to R53 may be the same or different, and each represent a hydrogen atom, an alkyl group having 1-20 carbons, an alkenyl group having 2-8 carbons, or an aromatic group having 4-18 carbons, or R 51 and R52 may be linked to each other to form, together with the carbon atoms to which these are bonded, an aliphatic hydrocarbon ring having 3-20 carbons. R54 and R55 are the same or different, and each represent a hydrogen atom or an alkyl group having 1-6 carbons. R56 represents an alkyl group having 1-20 carbons or an alicyclic hydrocarbon group having 3-20 carbons. -CH2- contained in the alkyl group, the aliphatic hydrocarbon ring, and the alicyclic hydrocarbon group may be substituted with -O- or -S-, and d represents an integer from 0 to 4. A case in which R51 to R53 are all hydrogen atoms in formula (R-1), formula (R-3), and formulae (R-5) to (R-7) is excluded.)

A preparation method and application of a perovskite film, which are used to solve the technical problem of how to have good stability while having good photoelectric conversion efficiency for the existing perovskite film. An inorganic halide salt containing bismuth, an N,N-dimethylformamide solution, hydroiodic acid and raw materials are used to prepare an intermediate material containing bismuth. Using this intermediate material as a raw material, together with an inorganic halide salt containing lead, cesium iodide and an N,N-dimethylformamide solution as raw materials, a precursor solution is prepared. The perovskite film prepared from this precursor solution has a perovskite crystal structure of ABX3. In the perovskite film of the present invention, the A site is occupied by CS and DMA, and the B site is occupied by Pb and Bi. The perovskite film in the present invention has good stability, and at the same time, the photoelectric conversion rate can exceed 10%. At the same time, a black perovskite thin film can be obtained at a temperature of 80 to 150 °C or below. The present invention is mainly used in the technical field of optoelectronic functional materials and devices.

The present invention discloses an organic-inorganic hybrid luminescent halide material, its preparation method, and application, belonging to the technical field of luminescent materials. The organic-inorganic hybrid luminescent halide material has the general chemical formula AL6ACl6, where A is a lanthanide ion and L is N,N'-dimethylurea or N,N'-diethylurea. The present invention also discloses a preparation method and application of the organic-inorganic hybrid luminescent halide material. The organic-inorganic hybrid luminescent halide material of the present invention can be stably present in an atmospheric environment with a relative humidity of less than 65%, solving the problem of poor air and humidity stability of existing lanthanide-based organic-inorganic hybrid halides and having broad application prospects.

The invention relates to a Zn < 2 + > ion doped Cd-based halide perovskite luminescent material and a preparation method thereof, and belongs to the field of X-ray luminescence and detection. The chemical formula of the luminescent material is shown in the specification. CsCd (1-x) Cl3: xZn < 2 + >, wherein 0 lt; x is smaller than or equal to 0.4. The luminescent material is obtained by mixing Zn < 2 + > ions, Cd < 2 + > ions and Cs < + > ions at room temperature. The preparation method comprises the following steps: fully dissolving Zn < 2 + > ions and Cd < 2 + > ions in concentrated hydrochloric acid according to a molar ratio, adding a precursor solution containing Cs < + > ions, magnetically stirring for a plurality of hours, and drying to obtain the luminescent material. The luminescent material not only has the light yield as high as 83700 photons MeV <-1 >, but also has the extremely low detection limit of 52.3 nGyairs <-1 >. In addition, the X-ray luminescent material has the advantages of being easy to prepare, low in cost, good in stability and the like, and is suitable for large-scale production.

The present invention relates to a process for the preparation of (4Z)-11,11-dialkoxy-4-undecenyl triaryl phosphonium halides of general formula (3-Z), wherein Y represents a halogen atom, Ar represents independently of each other an aryl group, R 1 and R 2 represent independently of each other a monovalent hydrocarbon group having 1 to 15 carbon atoms, or R 1 and R 2 may together form a divalent hydrocarbon group R 1 -R 2 having 2 to 10 carbon atoms, which process comprises: subjecting a (7Z)-11-halo-1,1-dialkoxy-7-undecene compound of general formula (1-Z), wherein X 1 represents a halogen atom, R 1 and R 2 are as defined above, to a phosphonium salt forming reaction with a phosphine compound of general formula (2), wherein Ar is as defined above, to form said compound (3-Z); and also relates to a compound of general formula (A) L(CH2)3CH=CH(CH2)5CH(OR 1 )(OR 2 )(A), wherein R 1 and R 2 are as defined above.

A sulfide solid electrolyte is provided having: diffraction peak A observed within a range of 2θ=20.0° to 24.0°; and diffraction peak B observed within a range of 2θ=24.4° to 26.4°, diffraction peak A and diffraction peak B being observed by performing X-ray diffraction measurement using CuKα1 radiation, and the ratio of IA to IB, IA / IB, being 2.0 or less, wherein IA is an intensity of diffraction peak A and IB is an intensity of diffraction peak B. Preferably, the sulfide solid electrolyte contains elemental lithium, elemental phosphorus, elemental sulfur, and an elemental halogen. It is also preferable that the sulfide solid electrolyte has an argyrodite-type crystal structure. It is also preferable that the sulfide solid electrolyte contains a lithium halide hydrate.

Methods of removing molybdenum oxide from a surface of a substrate comprise exposing the substrate having a molybdenum oxide layer on the substrate to a halide etchant having the formula RmSiX4-m, wherein m is an integer from 1 to 3, X is selected from iodine (I) and bromine (Br) and R is selected from the group consisting of a methyl group, ethyl group, propyl group, butyl group, cyclohexyl group and cyclopentyl group. The methods may be performed in a back-end-of-the line (BEOL) process, and the substrate contains a low-k dielectric material.

The present disclosure provides a process for the preparation of a compound of formula (V) wherein n of the groups R6'to R9 'is-RbOC (O) C (R13) = CH2, and further wherein R13 is H or C1 alkyl, n is an integer from 1 to 3, and for each of the n groups, Rb is independently selected from a covalent bond, a C2-C12 alkylene, a C3-C18 cycloalkylene, or a C6-C18 arylene. In a first process step i), a disulfide compound of formula (I) is reacted with a hydroxy-functional compound of formula (II) in an acidic medium having a pH < = 4 to produce a compound of formula (III) wherein: R2 to R5 are independently selected from H or C1-C6 alkyl, R6 to R9 correspond to the substituents R6'to R9 'and are independently selected from H, C1-C6 alkyl, C1-C6 alkoxy, C1-C12 alkoxyalkyl, SR12, COOR12 and N (R12) 2; r10 and R11 are H; and each R12 is independently selected from C1-C6 alkyl or C6-C18 aryl, with the proviso that n of the groups R6 to R9 are Rb (OH), and for each of the n groups, Rb is independently selected as defined above. In a second step ii) the compound of formula (III) is reacted in an inert aprotic solvent with a (meth) acrylating agent of formula (IV) to produce the compound of formula (V) wherein: in formula (IV), X is a halide or-OC (O) C (R13) = CH2; and the number of moles of (meth) acrylate groups provided by the compound of formula (IV) is at least equal to the number of moles of hydroxyl groups provided by the compound of formula (III). # imgabs0 #

Disclosed is a quantum dot production method that can improve EQE. The quantum dot production method of the present application is characterized by comprising a step of producing a core and a step of coating a shell on the surface of the core. The step of coating the shell is performed by mixing an acidic compound and a zinc halide compound in a shell material. The step of coating the shell is preferably divided into a first half and a second half. The shell is coated in the first half using a shell material mixed with the acidic compound but not mixed with the zinc halide compound, and the shell is coated in the second half using a shell material mixed with both the acidic compound and the zinc halide compound.

The invention provides a process for preparing molybdenum and tungsten oxyhalide compounds which are useful in the deposition of molybdenum and tungsten containing films on various surfaces of microelectronic devices. In the process of the invention, a molybdenum or tungsten trioxide is heated in either a solid state medium or in a melt-phase reaction comprising a eutectic blend comprising alkaline and / or alkaline earth metal salts. The molybdenum or tungsten oxyhalides thus formed may be isolated as a vapor and crystallized to provide highly pure precursor compounds such as MoO2Cl2.

A process for depositing a high quality smooth and continuous silicon-containing film comprising: a) providing at least one substrate in a reactor, b) heating the reactor to at least one temperature in the range of ambient temperature to about 750 DEG C, and optionally maintaining the reactor at a pressure of about 100 torr or less, c) introducing into the reactor at least one first silicon precursor comprising at least one organic amino group and at least one halide group and having the formula: SiHmXn (NR1R2) 4-m-n wherein m-0, 1, 2; m is 1, n-1, 2, 3, and m + n is less than 3; x is selected from the group consisting of Cl, Br and I; r1 and R2 are each independently selected from the group consisting of a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cycloalkyl group, a C2 to C6 dialkylamino group, an electron withdrawing group, and a C6 to C10 aryl group, to form a first silicon-containing layer, d) purging any unreacted precursor from the reactor with an inert gas, e) introducing a nitrogen source to react with the first silicon-containing layer to form a seed layer comprising at least one selected from the group consisting of silicon nitride and carbon-doped silicon nitride, f) purging the reactor with an inert gas, g) introducing into the reactor at least one second silicon precursor comprising a halogenated silicon-containing compound, the first silicon-containing layer comprises at least one selected from the group consisting of silicon nitride, carbon-doped silicon nitride, silicon oxynitride, and carbon-doped silicon oxynitride, h) purging the reactor with an inert gas, i) introducing a nitrogen source to react with the second silicon-containing layer to form silicon nitride or carbon-doped silicon nitride, and d) introducing a nitrogen source to react with the silicon nitride or carbon-doped silicon nitride to form a second silicon-containing layer comprising at least one selected from the group consisting of silicon nitride, carbon-doped silicon nitride and carbon-doped silicon oxynitride. And j) purging the reactor with an inert gas.

A method for processing an object for lithography comprising: Providing a first gas comprising first molecules; Providing a particle beam on a working area of the object for removing a first material (A) in the working area based at least in part on the first gas; wherein the first material comprises chromium and nitrogen, and wherein the first material comprises at least 1 atomic percent nitrogen, preferably at least 5 atomic percent nitrogen, more preferably at least 10 atomic percent nitrogen, most preferably at least 20 atomic percent nitrogen; wherein the first molecules comprise a halogen compound; wherein the halogen compound comprises a noble gas halide; Providing a second gas comprising second molecules, wherein the removal of the first material is further based at least in part on the second gas; wherein the second molecules comprise an oxygen-containing component; wherein the first material comprises chromium nitride.

The invention provides a method for catalyzing free radical-nucleophilic addition halogenation-functionalization of alkene through a visible light induced iron-based material, and belongs to the technical field of organic chemistry. According to the method, olefin is taken as a reaction substrate, inorganic halide MXn is taken as a halogen source, in the presence of a nucleophilic reagent Nu, a halogen functionalization reaction of olefin is efficiently and highly selectively realized through co-catalysis of an iron-based material and visible light, C-X (X = Cl, Br) and C-Y (Y = X, O, S) are constructed at the same time, and a halogen-functionalization product is prepared. According to the method, halide ions are used for replacing traditional halogen simple substances, and olefin which is low in price and easy to obtain is directly converted into the halide which contains a plurality of functional groups and has a high additional value and subsequent derivation potential through free radical-nucleophilic addition under a mild condition. The method has the advantages of environment friendliness, high selectivity, low energy consumption and the like, and has important theoretical significance and practical application value.

Disclosed is a biphenol metal complex. The structure thereof is as represented by formula I, wherein R1 and R1′ are each independently selected from hydrogen and a substituted or unsubstituted C1-C20 hydrocarbyl; R3-R7, R3′-R7′ are each independently selected from hydrogen and a substituted or unsubstituted C1-C20 hydrocarbyl, any two adjacent groups of R3-R7 are optionally linked to form a ring, and any two adjacent groups of R3′-R7′ are also optionally linked to form a ring; M and M′ are each independently selected from the Group 4 metals; each X is independently selected from the group consisting of a hydrocarbyl having 1 to 20 carbon atoms, hydride, amido, alkoxide, alkyl sulfide, alkyl phosphide, halide, diene, amine, phosphine, ether, and combinations thereof; m and n are independently an integer of from 1 to 4; and L is a divalent linking group.