1721 results about "Perovskite (structure)" patented technology

The invention relates to a perovskite solar cell and a preparation method thereof. The perovskite solar cell is composed of an FTO glass substrate, a sandwich structure TiO2/ZnO/TiO2 compact layer, a TiO2 mesoporous/perovskite structure material active light absorption layer, a spiro-OMeTAD hole transferring layer and a gold electrode. Compared with the prior art, the sandwich structure TiO2/ZnO/TiO2 compact layer combines with the advantages and disadvantages of TiO2 and ZnO, so that fill factors of the perovskite solar cell are improved to 70%, and the photoelectric conversion efficiency reaches 12.6%. Equipment for preparing the perovskite solar cell is simple, the preparing process is simple, control is easy, the cost is low, and the perovskite solar cell has a very good industrial application prospect.

The invention discloses a perovskite solar cell and a preparation method of the perovskite solar cell by a solution method. The perovskite solar cell comprises a substrate, a transparent electrode, an electron transfer layer, a light absorption layer, a hole transfer layer and a top electrode which are sequentially laminated, wherein the light absorption layer is a photovoltaic material light absorption layer in a perovskite structure. The electron transfer layer, the perovskite material light absorption layer and the hole transfer layer can be prepared by the solution method in a low-temperature (below 200 DEG C) air environment, and particularly, the electron transfer layer does not require nano particles treated or synthetized at a high temperature (above 450 DEG C), so that a technological process can be simplified, the cost is lowered, the preparation efficiency of the cell is improved, and mass production is achieved.

The invention relates to an infrared-excited oxide up-conversion luminescence piezoelectric material of a bismuth lamellar perovskite-like structure and a preparation method thereof. The up-conversion luminescence piezoelectric material has a chemical general formula of Am-1-x-RxYbyBi2BmO3M<+3>, wherein R is selected from Er<3+>, Ho<3+> and Tm<3+>, A is selected from Bi<3>, Ca<2+>, Sr<2+>, Ba<2+>, Pb<2+>, Na<+>, K<+>, La<3+> and Y<3+>, B is selected from Ti<4+>, Zr<4+>, Nb<5+>, Ta<5+>, W<6+> and Mo<6+>, m is a positive integer not smaller than 2 and not more than 8, x is not smaller than 0.000001 and not more than 0.3, and y is not smaller than 3.0 and not more than 0.6. The up-conversion luminescence piezoelectric material is prepared by adopting a solid-phase reaction method, has the characteristics of good thermal stability, good chemical stability, easiness for synthesis, high luminous intensity and adjustable color, and can be widely applied to various aspects such as three-dimensional display, infrared detection, counterfeiting prevention, solar cells and photoelectric integration, micro-electro-mechanical systems, photoelectric sensing and the like.

A multilayer ceramic electronic component comprising an element body in which a dielectric layer and an internal electrode layer are stacked. The dielectric layer is constituted from a dielectric ceramic composition including; a compound having a perovskite structure expressed by a formula of ABO₃ (A is at least one selected from Ba, Ca, and Sr; B is at least one selected from Ti, Zr, and Hf); an oxide of Mg; an oxide of rare earth elements including Sc and Y; and an oxide including Si. The dielectric ceramic composition comprises a plurality of dielectric particles and a grain boundary present in between the dielectric particles. In the grain boundary, when content ratios of Mg and Si are set to D(Mg) and D(Si) respectively, D(Mg) is 0.2 to 1.8 wt % in terms of MgO, and D(Si) is 0.4 to 8.0 wt % in terms of SiO₂.

The invention relates to a perovskite solar cell and a method for manufacturing the same. The perovskite solar cell comprises an FTO (fluorine-doped tin oxide) transparent conducting glass substrate, an electron transport layer, a light absorption layer, a hole transport layer and a metal electrode. The light absorption layer is made of (C<6>H<5>CH<2>CH<2>NH<3>)<2>(CH<3>NH<3>)<n-1>Pb<n>I<3*n+1> (the n is equal to 1 or 2) materials which are of two-dimensional layered structures. The perovskite solar cell and the method have the advantages that the layered perovskite light absorption layer is manufactured by the aid of a spin coating process, the method is simple and is excellent in film-forming property, the materials of the light absorption layer can be changed along with the layer number n, gaps of the materials can be adjusted, and the materials are excellent in chemical stability and still can keep the excellent layered structures without chemical decomposition after being exposed at high air humidity (50-80%) for 30 days, solar cell prototype devices with excellent and stable performance can be obtained, and the perovskite solar cell and the method are favorable for promoting perovskite solar cell commercialization progress.

The invention provides a composite material containing a perovskite structure oxide, a preparation method and application thereof. The composite material contains, by weight, 20%-99.99% of the perovskite structure oxide and 0.01%-80% of an oxygen ion conductor oxide. According to the invention, a sol-gel method can be employed to prepare the perovskite structure oxide, a combustion method can be employed to prepare the oxygen ion conductor oxide, and then the perovskite structure oxide and the oxygen ion conductor oxide can be mixed uniformly by means of ball milling or mechanical grinding, thus obtaining the composite material. The invention also relates to application of the composite material in solid oxide fuel cells and solid oxide electrolysis cells.

The invention relates to a perovskite thin-film photovoltaic cell and a manufacturing method of the perovskite thin-film photovoltaic cell. The perovskite thin-film photovoltaic cell is composed of a conducting transparent substrate, a perovskite light-absorbing layer, a hole transfer layer and a metal electrode. The perovskite thin-film photovoltaic cell has the advantages that the structure is quite simple, a traditional electron transfer layer which needs high-temperature sintering is omitted due to the fact that a perovskite material serves as the light-absorbing layer and achieves the electron transfer function, and a porous layer is not needed either; the perovskite material is high in light-absorbing performance, the whole cell is manufactured at a low temperature, the complicated processes such as high-temperature sintering are not needed, and therefore the manufacturing cost of the cell is effectively reduced; the great promotion function is achieved on the flexibility of the cell and the large-sized reel-to-reel printing manufacturing of the cell; the whole manufacturing technology of the cell is simple, the popularization of the technology is facilitated, high photoelectric converting efficiency (approximate to 14 percent) and good device stability are obtained particularly, and therefore the industrial application prospect is achieved.

The invention provides a novel thermal insulation coating material with no phase transfer problem, a melting point higher than the working temperature range, a thermal conductivity lower than that of zirconia, and a thermal expansion rate higher than that of zirconia. The thermal barrier coating material has an orthorhombic or monoclinic crystal structure derived from perovskite (for example, a platy perovskite structure represented by the composition formula A2B2O7), or a c-axis/a-axis ratio of 3 or more The composition of the tetragonal layered structure (such as K2NiF4 structure and Sr3Ti2O7 structure, Sr4Ti3O10 structure), and the composition represented by the composition formula LaTaO4, and the composition with the composition formula M2SiO4 or (MM') 2SiO4 (wherein M, M 'is a divalent metal element) composition of the olivine structure represented as the main body.

The invention relates to a perovskite solar cell with interface modification layers. The cross-sectional structure of the perovskite solar cell includes a transparent conductive substrate, a first transmission layer, a perovskite active layer, a second transmission layer and a back electrode; at least one first interface modification layer is disposed between the perovskite active layer and the first transmission layer; and no or at least one second interface modification layer is disposed between the perovskite active layer and the second transmission layer. The invention also discloses a preparation method of the perovskite solar cell. According to the method, the interface modification layers are additionally arranged between the perovskite active layer and transmission layers of a perovskite solar cell, so that the perovskite solar cell with the interface modification layers can be prepared; the surfaces of the transmission layers are passivated; the crystal structure of the perovskite is optimized; ion migration in the perovskite active layer is suppressed to a certain extent; and therefore, the photoelectric conversion efficiency and long-term stability of the perovskite cellare improved.

A Fischer-Tropsch catalyst support comprising at least 15 wt % of a material having the formula X_aY_bO_c wherein: X comprises an element selected from the group consisting of magnesium, calcium, barium, strontium, cerium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, niobium, ruthenium, rhodium, palladium, cadmium, osmium, iridium, platinum, gold, mercury, tin, lead, lanthanides, and mixtures thereof; Y comprises a different element to X, Y selected from the group consisting of silicon, aluminium, titanium, zirconium, cerium, hafnium, gallium, and mixtures of these, preferably silicon, aluminium and titanium and mixtures thereof, especially titanium; O is oxygen; a and b are, independently, in the range of 1-6; c is in the range of 1-15. Preferably a perovskite-type structure results which is more stable and resistant to degradation.

The invention relates to photovoltaic cell, in particular to a solar cell of a perovskite structure and a preparing method of the solar cell. Firstly, a titanium oxide or zinc oxide n-type compact layer is deposited on FTO conductive glass; secondly, an aluminum oxide barrier layer is deposited, then a layer of hybridized perovskite structure CH3NH3PbI3 is prepared, an aluminum oxide insulation layer is continuously deposited, and then an organic P-type layer is deposited; lastly, a metal electrode layer is deposited. The perovskite structure CH3NH3PbI3 is wrapped by the barrier layer and the insulation layer to form a sandwich protection structure, and the stability of the perovskite cell is effectively improved.

The present invention offers a variable resistance device and a semiconductor apparatus that have component parts less subject to damage and thereby ensure stable quality at a high yield, even if the manufacturing processes include operations in a deoxidizing atmosphere or an oxidizing atmosphere. The variable resistance device of the present invention comprises: a variable resistance layer made of a metal oxide and causing changes in electric resistance thereof in accordance with control conditions; and a hydrogen-diffusion preventing layer which surrounds at least part of the variable resistance layer and prevents hydrogen from diffusing into the variable resistance layer.

Disclosed here are material formulations of use in the conversion of exhaust gases. A catalyst is formed by using a perovskite structure having the general formula ABO3 or a mullite structure having the general formula of AB2O5 where components “A” and “B” may be any suitable non-platinum group metals. Suitable materials may include Yttrium, Lanthanum, Silver, Manganese and formulations thereof.

The invention relates to a novel process for preparing an organic-inorganic perovskite thin film through adopting an experimental scheme in which two kinds of metal compounds are adopted as precursors. With the novel process adopted, an efficient solar battery device with a planar structure can be prepared. According to the novel process, the two kinds of metal compound precursors are compounded, and therefore, a pinhole defect of the perovskite thin film can be effectively avoided, and compound of electrons and holes can be alleviated, and short-circuiting risks of the perovskite thin film can be decreased. The novel process of the invention belongs to the photoelectric material field and is characterized in that the two kinds of metal compounds are selected as a source of metal ions in a perovskite material, wherein the general formula of the organic-inorganic perovskite material is ABX3, wherein A is CH3NH3 or NH2-CH=NH2, B is Pb or Sn, and X is I or Br. With the preparation method adopted, the thickness of the perovskite thin film is uniform, and the crystallinity of the perovskite thin film is high, the perovskite thin film can have high electron and hole transport ability. The preparation method is suitable for large-area preparation of organic-inorganic perovskite solar battery devices with planar structures.

The invention relates to a perovskite photovoltaic cell with bilayer nanometer mesoporous electron-transporting layer and preparation method thereof. The cell comprises a conducting substrate, an electron-transporting layer with double-layer structure, a perovskite light absorption layer, a hole-transporting layer and metal electrodes. The perovskite photovoltaic cell with bilayer nanometer mesoporous electron-transporting layer has the advantages that the SnO2 with one step method low-temperature growth, is used as the electron-transporting layer in the photovoltaic cell, replaces the TiO2 electron-transporting layer with two steps method high temperature sintering, and the preparation process is simplified. The mesoporous perovskite photovoltaic cell prepared with one step low-temperature growth method obtains 13.82% of highlight electricity transfer efficiency, and reduces the manufacturing cost effectively at the same time. Compared with a planer construction, the mesoporous structure used in the perovskite photovoltaic cell is liable for the adherence of the perovskite light absorption material. SnO2 conducts a smaller dissimilation on the perovskite light absorption layer than the TiO2 does, the performance and stability of the cell are improved in this way. The perovskite photovoltaic cell with bilayer nanometer mesoporous electron-transporting layer and preparation method thereof plays a great promoting role in the development and popularization on the flexible solar cell, and further promotes the industrialized application on the perovskite solar cell.

The invention relates to a method for synthesizing a silicon dioxide cladded organic-inorganic perovskite structure quantum dot and application of the quantum dot synthesized by the method, and belongs to the field of nano-material synthesis. The method comprises the following steps: taking methylammonium halide and lead halide as raw materials and taking oleic acid and an amino-containing silane coupling agent as ligands to synthesize the stable and efficient silicon dioxide cladded organic-inorganic perovskite structure quantum dot, which is capable of being processed in a solution, in one step through a solution method at room temperature. According to the method provided by the invention, the stability of the quantum dot is greatly increased through silicon dioxide cladding; meanwhile, high fluorescent quantum efficiency of the quantum dot is ensured and can reach 95 percent at maximum. Meanwhile, the quantum dot prepared by the method can be dispersed into solvents including toluene and the like to form a stable solution. A quantum dot solution and a toluene solution of polystyrene are mixed and can be used for preparing a warm white-light light emitting diode; the prepared white-light light emitting diode has a color coordinate (0.38, 0.43) and color temperature of 4500K, and can be applied to various fields including information storage, information encryption, counterfeiting prevention, illumination display and the like.

The invention discloses a mesoporous perovskite solar cell and a preparation method thereof. The mesoporous perovskite solar cell comprises a transparent conductive base, a compact layer, a skeleton layer, a perovskite layer, a hole transmission layer and a counter electrode, wherein the compact layer, the skeleton layer, the perovskite layer, the hole transmission layer and the counter electrode are sequentially stacked on the transparent conductive base; and the skeleton layer is a barium stannate film with a perovskite structure and the like, and has p-type conductivity or n-type conductivity or comprises an insulator. With a novel perovskite oxide as the skeleton layer, the mesoporous perovskite solar cell has relatively high charge collection efficiency, and is relatively good in contact with a perovskite layer interface. Compared with a traditional titanium dioxide compact layer, the photoelectric properties such as short-circuit current and filling factors can be effectively improved; leakage current caused by contact of the hollow transmission layer and an electron transmission layer is reduced; reverse recombination of photoelectrons is prevented; and the photoelectric conversion efficiency is improved.

The invention discloses a ceramic solid electrolyte and a preparation method thereof. The ceramic solid electrolyte comprises at least one of NASICON structure type (LiM<2>(PO<4>)<3>, M=Zr, Ge, Mg, Al), oxide (Li<3x>La<2/3-x>TiO<3>) of perovskite structure and oxide (Li<5>La<3>M<2>O<12>) of garnet structure. The preparation method of the ceramic solid electrolyte comprises the following steps of: a) weighing raw materials according to molar ratio of elements in chemical formula of the ceramic solid electrolyte, dissolving the raw materials in solvent, and obtaining mixed solution; b) preparing ceramic solid electrolyte precursor powder from the mixed solution through a spray drying process; c) sintering the precursor powder obtained by spray drying in the air, and finally obtaining the ceramic solid electrolyte with relatively high ionic conductivity and relatively low electronic conductivity. In the method provided by the invention, the spray drying process is used for preparing the ceramic solid electrolyte, spray drying has the advantages that the drying procedure is fast, the mixed solution is directly dried into powder and particle size distribution of the powder is uniform, and thus, large-scale preparation of the ceramic solid electrolyte is expected to be realized, and the method has practical value.

The invention provides a novel superimposed perovskite solar cell preparation method. A first block electrode is composed of a substrate and PEDOT:PSS. A second block electrode is composed of FTO, TiO2, perovskite, Spiro-MeOTAD, and PEDOT:PSS. The two block electrodes are superimposed so as to form the superimposed perovskite solar cell. A Layer I comprises thermally spraying PEDOT:PSS spraying liquid with different amount on a Spiro-MeOTAD film. A Layer II comprises thermally spraying PEDOT:PSS spraying liquid with different amount on a back electrode substrate. According to the superimposed perovskite solar cell, holes generated by the perovskite can be successfully extracted. The superimposed perovskite solar cell is simple in making technology and low in cost. Vacuum is prevented and the substrate can be flexibly transformed. The method is beneficial to flexible design of the nanometer structure of the electrodes and large-scale manufacture of the perovskite solar cells.

The invention discloses a preparation method and application of a perovskite type composite oxide catalyst. The perovskite type composite oxide catalyst is an A-position substituted perovskite type composite oxide. The structural formula of the catalyst is A1-xA'xBO3, wherein x is larger than 0 and smaller than 1; A is La or Nd element; the A'-position substitution ion is one of Ca, Sr, Ba, Ce and the like; and the B-position ion is one of Mn, Co, Ni, Fe and the like. The preparation method comprises the following steps of: according to a chemical metering ratio, weighing a water-soluble salt which contains the A-position, A'-position and B-position elements; mixing the salt and deionized water to obtain 5 to 20 percent salt solution; adding the solution into a beaker; adding activated carbon of which the mass is 0.1 to 1.5 times of the salt into the solution; completely soaking the activated carbon and standing; heating and stirring the mixture, continuously heating until the water content is completely evaporated, wherein the co-crystallized solid mixture is uniformly carried on the activated carbon, and after drying the mixture, grinding the mixture into powder; and sintering the powder in a muffle furnace, cooling the sintered powder with the furnace to room temperature, and grinding the cooled powder to obtain the powder of the perovskite type composite oxide mixed catalyst. The preparation method is suitable for production; and the electrode activity of the perovskite type catalyst can be greatly improved in a zinc air cell structure.

The invention relates to an SnO2 porous structure perovskite photovoltaic cell and a preparation method thereof, which belong to the field of photoelectric materials and devices. An electron-transporting layer of the perovskite photovoltaic cell is a tin oxide compact layer covering above a transparent conducting substrate and a tin oxide porous layer covering above a tin oxide compact layer film. The porous structure SnO2 perovskite porous photovoltaic cell prepared based on a low temperature obtains 12.58 percent of high photoelectric conversion efficiency, which is higher than a plane structure perovskite film photovoltaic cell adopting an SnO2 compact layer as an electron-transporting layer. The oxide SnO2 is acid and alkali resistant, large in band gap width, and low in ultraviolet attenuation as a cell window layer, and has significance on improving the stability of performances of devices; in addition, the preparation method is simple in process, low in cost, and beneficial to scale production, and has wide business application prospect.

The invention relates to an A-site vacancy type perovskite oxygen catalyst and a preparation method and application thereof, which mainly solves the problems of high cost and poor stability of the current fuel cell oxygen electrode catalyst. As the sol-gel method and the calcination process are adopted, the A site vacancy and the increase of B site valence of perovskite are realized, Furthermore,the oxygen vacancy number is increased, the electronic structure of the B site is changed, and the electrochemical oxygen reduction performance of the perovskite catalyst is improved essentially. Moreover, the application of alkaline environment can better protect the catalytic activity of metal elements at the B site, and greatly improve the stability of the perovskite catalyst. Compared with thecommercially available platinum-carbon noble metal catalyst, the perovskite type oxygen catalyst has improved performance and reduced cost through vacancy treatment of the A site and doping of metalelements with smaller ion radius, and has good application prospect in alkaline fuel cells in the future.

An object is to provide a dielectric layer of a double-sided copper clad laminate, for use in formation of a built-in capacitor layer, which can be formed in an optional thickness without using a skeletal material and is provided with a high strength. For the purpose of achieving the object, “a dielectric filler containing resin for use in formation of the built-in capacitor layer of a printed wiring board obtained by mixing a binder resin comprising 20 to 80 parts by weight of epoxy resin (inclusive of a curing agent), 20 to 80 parts by weight of a solvent soluble aromatic polyamide resin polymer, and a curing accelerator added in an appropriate amount according to need; and a dielectric filler which is a nearly spherical dielectric powder having perovskite structure which is 0.1 to 1.0 μm in the average particle size D_IA, 0.2 to 2.0 μm in the weight cumulative particle size D₅₀ based on the laser diffraction scattering particle size distribution measurement method, and 4.5 or less in the coagulation degree represented by D₅₀/D_IA where the weight cumulative particle size D₅₀ and the average particle size D_IA obtained by the image analysis”; and the like are used.