The application provides a terahertz emitter
film structure based on a Ni / Cr / Ti
metal heterostructure and an
ion irradiation enhancement method thereof, a substrate material is glass, and a ferromagnetic layer of a Ni film, an intermediate functional layer of a Cr film and a protective layer of a Ti film are sequentially deposited on the surface of the substrate material. The
ion irradiation enhancement method comprises the following steps: a ferromagnetic layer of a Ni film, an intermediate functional layer of a Cr film and a protective layer of a Ti film are sequentially deposited on the surface of the substrate material by adopting a magnetron
sputtering deposition method, and an
intermediate product on which the three
metal film
layers are deposited is subjected to
ion irradiation. The beneficial effects are as follows: the Cr film layer is used to realize ultrafast current transients under
femtosecond laser excitation and generate
terahertz radiation. The
metal film is subjected to ion irradiation treatment, and the terahertz
emission intensity is significantly improved.