58results about How to "Broad emission spectrum" patented technology

A transparent glass ceramics of RE-doped oxyfluoride is proportionally prepared from SiO2, Al2O3, EnF2, MF2 and ReF3, where M is 2-valence alkali-earth metal ion chosen from Mg, Ca, Sr, and Ba and Re is 3-valence RE ion chosen from La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, through high fusing and heat treating. It can be extensive used in laser, luminous and optical communication field.

The invention relates to an ultra-wideband and high-gain fiber and device fabrication technology. The fabrication technology comprises the steps of (1) fabricating a gain fiber, wherein the gain fiberis a composite structure fiber, a fiber core is multiple groups of symmetrically-distributed fan-shaped structures or a plurality of concentric circular structures and comprises at least two different types of rare earth-doping glass, and a light-emitting center is arranged at different fan-shaped structure or circular structure regions in the fiber core; and (2) building a fiber laser, wherein the gain fiber is used, rare-earth ions in different regions in the fiber core are selectively simulated by controlling shapes of pumping light spots, and tunable laser output is achieved by combiningfiber grating. The design of the fiber structure and optical field distribution control of pumping light are combined, the fabricated gain fiber has the characteristics of high gain and ultra wideband, remaining heat generated by all-fiber core pumping is prevented by selectively simulating the light-emitting ions in a special region, and the fabrication technology can be used for a wideband-tunable single-frequency fiber laser and a high-repetition frequency locked-mode fiber laser.

The invention discloses rare earth doped fluorescent powder and a synthetic method thereof and application of the fluorescent powder in LED devices, and belongs to the technical field of luminescent materials. The general chemical formula of the fluorescent powder is MS[2-y]AyO[2+y]N[2-y-4z/3]Cz:Rx. According to the compound, C<4-> is substituted for N<3->, due to the fact that the electronegativity of C is smaller than that of N, the electron cloud expansion effect of the C<4-> is more obvious than that of the N<3->, after doping is conducted, rare earth ion 5d energy level splitting is increased, Stokes shift can change, and fluorescence parameters such as fluorescent peal and full half-peak width of the powder change. By adjusting generation of the above-mentioned doped ions, fluorescent powder with different fluorescent light colors and quantum efficiency can be obtained. The invention further discloses the application of the fluorescent powder in the field of LED devices. The fluorescent powder is applied to white LED light fixtures or light-emitting components which take blue LED or purple LED as a light source and can help to increase the color rendering indexes of the devices.

The invention relates to a Ti (titanium)-doped gallium oxide crystal, as well as a preparation method and application thereof. The molecular formula of the crystal is beta-(Ga1-xTix)2O3, x being lager than 0.0001 and less than 0.1. The crystal beta-(Ga1-xTix)2O3 is grown by adopting an edge-defined film-fed crystal growth method. Ti is adopted as an active ion, a fluorescence spectrum is positioned in a visible and near infrared bands, an emission spectrum is relatively broad, and the crystal is suitable for output of ultrafast laser of the band and output of tunable laser of a broadband. Compared with the prior art, the Ti-doped gallium oxide crystal has the advantages of high heat conductivity, low lattice distortion after doping of the Ti ion and capability of serving as an ultrafast laser and tunable laser gain medium.

The invention discloses a transition metal ion concentration gradient doped zinc sulfide/ zinc selenide and a preparation method thereof. The active ion of the laser material is one or more of transition metal ions Tm<2+>, Cr<2+>, Co<2+> and Fe<2+>, and the doping concentration of the transition metal ions on two end surfaces of the laser material is in exponential distribution from high to low and is 10<16>-10<20> ions/cm<3>. The material has the characteristics of wide absorption and emission bandwidth and large absorption and emission section, and can obtain ultra-short and ultra-fast laser output with high peak power. One end of the laser material with large doping concentration is attached to a heat sink, so that heat energy generated when incident light enters the laser gain material can be quickly taken away, thus the heat effect produced by laser is reduced, and efficient laser output is achieved.

The invention discloses a Cr<3+> doped near-infrared wide-spectrum luminescent material and a preparation method thereof, which belong to the technical field of near-infrared luminescent materials. The general chemical formula is Ca3Y2-xGe3O12: xCr<3+>, and x is greater than or equal to 0.01 mol% and less than or equal to 20 mol%. The near-infrared luminescent material belongs to a cubic crystal system and has a garnet type space crystal structure the same as Ca3Y2Ge3O12, the space group is Ia3d, Ca<2+> occupies dodecahedron octa-coordination, Y<3+> occupies octahedron hexa-coordination, and Ge<4+> occupies tetrahedron tetra-coordination. The material is wide in excitation spectrum, the optimal excitation wavelength ranges from 400 nm to 550 nm, and the emission wavelength ranges from 700nm to 1200 nm. The material is matched with a blue-light LED chip, can be used for manufacturing a wide-spectrum near-infrared light source, and is applied to the fields of plant illumination, biological probes, military affairs and the like. The method is simple in preparation process, low in raw material price and easy to synthesize.

The invention discloses a composite structure based on a Ce:YAG wafer, comprising the Ce:YAG wafer and a red light emitting layer fixed on the Ce:YAG wafer. The invention further discloses a manufacturing method of the composite structure based on a Ce:YAG wafer, through which a composite optical structure capable of emitting light ranging from green light to red light is formed. The composite optical structure can be widely applied in the fields of detection equipment and illumination devices.

The invention discloses red fluorescence powder for laser medical-treatment illumination and a preparation method and application thereof. The chemical formula of the red fluorescence powder is M1-x-zLixAl1-x-ySi1+x+yN3-yCy:zEu<2+> or M1-m+0.5n-pLimAl1-mSi1+mCnN3-n:pEu<2+>, wherein the x and the m are 0.01-0.3, the y and the n are 0.01-0.30, and the z and the p are 0.001-0.3. According to the preparation method of the red fluorescence powder for laser medical-treatment illumination, the fluorescence powder having good luminescence property is prepared by utilizing a high-temperature solid-state method and doping different atoms. In addition, the specific temperature is adopted for calcination, calcining reaction is performed at the temperature of 1500-1900 DEG C for 1-20 hours to enable components to be better bound together and to play excellent optical properties, and the red fluorescence powder is very suitable for manufacturing of medical-treatment illumination sources.

A reflective and heat-insulating QLED package device and a method for packaging the same as well as a luminaire are provided. The reflective and heat-insulating QLED package device includes a substrate, a first LED chip for emitting blue light, a second LED chip for emitting green light, an adhesive layer for quantum dots, a reflecting layer for changing the path of light rays, and a heat-insulating layer. The first LED chip and the second LED chip are arranged on the substrate in a tiled manner. The heat-insulating layer is arranged on the light output surface of the first LED chip and the second LED chip, a reflecting layer covers the heat-insulating layer, and a reflecting substance or a refractive substance is uniformly distributed in the reflecting layer. The adhesive layer for quantum dots covers the reflecting layer and is covered by a moisture and oxygen blocking adhesive layer.

The invention discloses phosphor powder for a GaN-based light-emitting diode and the preparation method thereof. The chemical formula of the phosphor powder is A(M1-x-yCexREy)Ga3S6O, in which A is at least one of the elements Ca, Sr or Ba; M is at least one of the elements La, Y or Gd;RE represents at least one of the elements Eu,Pr,Sm,Tb or Dy; x and y represent respectively mol percentage of Ce and RE compared with M; 0 less than x less than 1,0 less than or equal to y less than 1. The raw material is exactly weighed according to the chemical formula in preparing the phosphor powder. The weighed raw material is grinded fine, mixed uniformly, seared for 1 to 4 hours in the condition of shielding gas atmosphere and temperature of 850 to 1100 degrees centigrade, cooled, smashed and screened and then the product is prepared. Under the excitation of 300 to 500nm ray (especially 400nm and 460nm ray), the phosphor powder is capable of emitting 420 to 700nm rays. The phosphor powder is applicable for near ultraviolet or blue light LED chip. And the invention has the characteristics of broad excitation spectrum range, high luminescent brightness and simple preparation method, etc.

The present invention relates to a phosphor, a method for preparing the phosphor, an optoelectronic component, and a method for producing the optoelectronic component. The phosphor has the following general formula: LaGaGeO: 3xA, yCr, 5zB, where x, y, and z do not equal to 0 simultaneously; A represents at least one of Gd and Yb; B represents at least one of Sn, Nb, and Ta. For the phosphor, its emission spectrum is within a red visible light region and a near-infrared region when excited by blue visible light, purple visible light or ultraviolet light; and it has a wide reflection spectrum and a high radiant flux. Therefore, it can be used in optoelectronic components such as LEDs to meet requirements of current medical testing, food composition analysis, security cameras, iris/facial recognition, virtual reality, gaming notebook and light detection and ranging applications.

The invention relates to a method for detecting an anti-AQP4 antibody based on a quantum dot polystyrene microsphere. A novel immune method combining a quantum dot nanoprobe with a flow cytometry technology is used for detecting contained anti-AQP4 antibodies and breaks through the bottleneck of the traditional way that an organic fluorescent dye is taken as a detection tool. Meanwhile, the advantages of the flow cytometry technology that detection is rapid and standarization and automation can be easily realized are utilized, and the defects of an existing AQP4 antibody detection technology are made up. AQP4 antibodies can be simply, rapidly and repeatably detected.