Ti (titanium)-doped gallium oxide crystal, as well as preparation method and application thereof

A technology of gallium oxide and crystal, applied in the field of titanium-doped gallium oxide crystal and its preparation, new laser crystal and its preparation, to achieve the effects of small lattice distortion, high-energy laser output, and uniform doping

Active Publication Date: 2017-09-26
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently β-Ga 2 o 3 As a new generation of ultra-wide bandgap semiconductor materials, it has been widely studied in the semiconductor field, but there is still no Ti-doped β-Ga 2 o 3 The report of crystal as laser gain medium

Method used

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  • Ti (titanium)-doped gallium oxide crystal, as well as preparation method and application thereof
  • Ti (titanium)-doped gallium oxide crystal, as well as preparation method and application thereof
  • Ti (titanium)-doped gallium oxide crystal, as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Example 1: x=0.005, the chemical formula of titanium-doped gallium oxide crystal is β-(Ga 0.995 Ti 0.005 ) 2o 3

[0037] The preparation method of titanium-doped gallium oxide crystal is as follows:

[0038] (1) Selection and processing of raw materials

[0039] Weigh Ga with a purity of 99.999% according to the stoichiometric ratio 2 o 3 、Ti 2 o 3 , Put the raw materials into the mixer and mix them thoroughly for 48 hours. After the mixing is completed, the mixed raw materials are vacuum-dried at 100-200° C. for 5 hours to prevent absorbed water from entering the growth system, and the dried raw materials are pressed into a cake shape with a hydraulic press. Then put the cake into a corundum crucible and sinter at 1350° C. for 48 hours to obtain a titanium-doped gallium oxide polycrystalline material.

[0040] (2) Crystal growth

[0041] a. Put the pressed raw materials into the iridium crucible, and place the cuboid iridium mold. The upper surface of the ir...

Embodiment 2

[0049] Example 2: x=0.02, the chemical formula of titanium-doped gallium oxide crystal is β-(Ga 0.98 Ti 0.02 ) 2 o 3

[0050] The preparation method of titanium-doped gallium oxide crystal is as follows:

[0051] (1) Selection and processing of raw materials

[0052] Weigh Ga with a purity of 99.999% according to the stoichiometric ratio 2 o 3 、Ti 2 o 3 , Put the raw materials into the mixer and mix them thoroughly for 48 hours. After the mixing is completed, the mixed raw materials are vacuum-dried at 100-200° C. for 2 hours to prevent absorbed water from entering the growth system, and the dried raw materials are pressed into a cake shape with a hydraulic press. Then the cake was put into a corundum crucible and sintered at 1400° C. for 48 hours to obtain a titanium-doped gallium oxide polycrystalline material.

[0053] (2) Crystal growth

[0054] The difference from the step (2) in Example 1 is that the pulling speed of the crystal will be 5 mm / h; after the cryst...

Embodiment 3

[0055] Example 3: x=0.02, the chemical formula of titanium-doped gallium oxide crystal is β-(Ga 0.98 Ti 0.02 ) 2 o 3

[0056] The preparation method of titanium-doped gallium oxide crystal is as follows:

[0057] (1) Selection and processing of raw materials

[0058] Weigh Ga with a purity of 99.999% according to the stoichiometric ratio 2 o 3 、Ti 2 o 3 , Put the raw materials into the mixer and mix them thoroughly for 48 hours. After the mixing is completed, the mixed raw materials are vacuum-dried at 100-200° C. for 3 hours to prevent absorbed water from entering the growth system, and the dried raw materials are pressed into a cake shape with a hydraulic press. Then the cake was put into a corundum crucible and sintered at 1400° C. for 48 hours to obtain a titanium-doped gallium oxide polycrystalline material.

[0059] (2) Crystal growth

[0060] a. Put the pressed raw materials into the iridium crucible, and place a cylindrical iridium mold. The through hole wit...

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Abstract

The invention relates to a Ti (titanium)-doped gallium oxide crystal, as well as a preparation method and application thereof. The molecular formula of the crystal is beta-(Ga1-xTix)2O3, x being lager than 0.0001 and less than 0.1. The crystal beta-(Ga1-xTix)2O3 is grown by adopting an edge-defined film-fed crystal growth method. Ti is adopted as an active ion, a fluorescence spectrum is positioned in a visible and near infrared bands, an emission spectrum is relatively broad, and the crystal is suitable for output of ultrafast laser of the band and output of tunable laser of a broadband. Compared with the prior art, the Ti-doped gallium oxide crystal has the advantages of high heat conductivity, low lattice distortion after doping of the Ti ion and capability of serving as an ultrafast laser and tunable laser gain medium.

Description

technical field [0001] The invention relates to a novel laser crystal and its preparation method and application, in particular to a titanium-doped gallium oxide crystal and its preparation method and application, and belongs to the technical field of crystals and devices. Background technique [0002] Ultrafast lasers have excellent characteristics such as ultrashort pulse width and ultrahigh peak power, which enable them to provide extreme physical conditions and advanced experimental methods in many fields, such as processing, storage, medical treatment, communication, scientific research, national defense and other fields It has important application value. [0003] Currently commonly used ultrafast and tunable laser crystals are Ti:Al 2 o 3 、Cr:LiSrAlF 6 、Cr:LiCaAlF 6 , where Cr:LiSrAlF 6 、Cr:LiCaAlF 6 Crystal thermal conductivity is low, not suitable for high-power laser output, and its application is limited. Ti:Al 2 o 3 The crystal has high thermal conductiv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16C30B28/02C30B15/00
CPCC30B15/00C30B28/02C30B29/16
Inventor 贾志泰穆文祥陶绪堂
Owner SHANDONG UNIV
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