5376 results about "Crystal growth" patented technology

A crystal growth 301 is carried out by diffusing a metal element, and a nickel element is moved into regions 108 and 109 which has been doped with phosphorus. An axis coincident with the moving directions 302 and 303 of the nickel element at this time is made to coincide with an axis coincident with the direction of the crystal growth, and a TFT having the regions as channel forming regions is manufactured. In the path of the region where nickel moved, since high crystallinity is obtained in the moving direction, the TFT having high characteristics can be obtained by this way.

An inventive semiconductor laser diode includes a Group III nitride semiconductor layered structure having a major crystal growth plane defined by a non-polar or semi-polar-plane. The Group III nitride semiconductor layered structure includes: a p-type cladding layer and an n-type cladding layer; an In-containing p-type guide layer and an In-containing n-type guide layer held between the p-type cladding layer and the n-type cladding layer; and an In-containing light emitting layer held between the p-type guide layer and the n-type guide layer.

The present disclosure is directed to a method and system for the localized deposition of a metal layer on a surface. The method involves introducing at least two gaseous reactants to a substrate surface that is locally heated by a laser. The surface is heated to a temperature at which the gaseous reactants undergo a reaction that results in metal crystal growth on the substrate surface. The reaction is maintained for a desired period of time and under desired conditions to produce a localized deposit of a metal layer on the heated zone of the substrate. In some embodiments, the gas outlets and the laser may be moved in a controlled manner so that a metal layer may be deposited in a desired pattern on the substrate surface.

The present invention provides an apparatus for manufacturing a semiconductor thin film that is capable of manufacturing an even thin film with substantially no adhesion of impurities, and is capable of improving in-plane evenness of a grown thin film. The invention is an apparatus for manufacturing a semiconductor thin film includes a reaction tube 12, a susceptor 20 disposed in the reaction tube 12, and a negative pressure generator, the negative pressure generator applying a negative pressure to a substrate 22A placed on the susceptor 20 to hold the substrate, and the substrate 22A is placed so that an angle of a normal line to a crystal growth face of the substrate 22A to a vertical downward direction is less than 180°.

A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. In a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.

The invention discloses a concentric-ring sprayer structure for material vapor phase epitaxy, which solves the problem that the large-area deposition region provides a uniform flow field of a precursor gas mixture in a large-substrate or multi-substrate crystal growth process. The sprayer structure comprises more than one independent air inlet pipeline, wherein each air inlet pipeline is provided with a controller for monitoring and regulating inlet gas flow speed and flow rate; the bottom of the sprayer is provided with an air outlet baffle; more than one concentric ring is arranged in the sprayer; independent cavities are formed among the concentric rings and are mutually separated; the top end of each concentric ring is connected with one independent air inlet pipeline; and the air outlet baffle at the bottom end of each concentric ring is provided with one or more air outlets. The air sources are mutually separated and independently controlled; and the multi-sprayer integrated use mode obviously improves the quality of the large-area deposited grown crystal, and greatly enhances the production efficiency.

A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

Drugs, especially low aqueous solubility drugs, are provided in a porous matrix form, preferably microparticles, which enhances dissolution of the drug in aqueous media. The drug matrices preferably are made using a process that includes (i) dissolving a drug, preferably a drug having low aqueous solubility, in a volatile solvent to form a drug solution, (ii) combining at least one pore forming agent with the drug solution to form an emulsion, suspension, or second solution and hydrophilic or hydrophobic excipients that stabilize the drug and inhibit crystallization, and (iii) removing the volatile solvent and pore forming agent from the emulsion, suspension, or second solution to yield the porous matrix of drug. Hydrophobic or hydrophilic excipients may be selected to stabilize the drug in crystalline form by inhibiting crystal growth or to stabilize the drug in amorphous form by preventing crystallization. The pore forming agent can be either a volatile liquid that is immiscible with the drug solvent or a volatile solid-compound, preferably a volatile salt. In a preferred embodiment, spray drying is used to remove the solvents and the pore forming agent. The resulting porous matrix has a faster rate of dissolution following administration to a patient, as compared to non-porous matrix forms of the drug. In a preferred embodiment, microparticles of the porous drug matrix are reconstituted with an aqueous medium and administered parenterally, or processed using standard techniques into tablets or capsules for oral administration.

There are provided a GaN field effect transistor (FET) exhibiting an excellent breakdown voltage owing to the high quality of GaN crystal in a region where the electric lines of force concentrate during operation of the same, and a method of manufacturing the same. The FET has a layer structure formed of a plurality of GaN epitaxial layers. A gate electrode and a source electrode are disposed on the surface of the layer structure, and a drain electrode is disposed on the reverse surface of the same. A region of the layer structure in which the electric lines of force concentrate during operation of the FET has a reduced dislocation density compared with the other regions in the layer structure. The GaN FET is manufactured by forming, on a crystal-growing substrate having a surface formed with a plane pattern of a material other than a GaN-based material in an identical design to a plane pattern of an electrode determining the region in which the electric lines of force concentrate, a plurality of GaN epitaxial layers, one upon another, by using the epitaxial lateral overgrowth technique, thereby forming a layer structure, and then forming operational electrodes on the surface of the layer structure.

A method for efficiently producing a plate-like nitride semiconductor crystal having the desired principal plane in a simple method is provided. A raw material gas is fed to a seed crystal in which a ratio (L/W) of length L in a longitudinal direction and maximum width W, of a plane of projection obtained by projecting a crystal growth face on the seed crystal in a growth direction is from 2 to 400, and the maximum width W is 5 mm or less, thereby growing a plate-like semiconductor crystal on the seed crystal.

Objects are to provide a semiconductor device for high power application in which a novel semiconductor material having high productivity is used and to provide a semiconductor device having a novel structure in which a novel semiconductor material is used. The present invention is a vertical transistor and a vertical diode each of which has a stacked body of an oxide semiconductor in which a first oxide semiconductor film having crystallinity and a second oxide semiconductor film having crystallinity are stacked. An impurity serving as an electron donor (donor) which is contained in the stacked body of an oxide semiconductor is removed in a step of crystal growth; therefore, the stacked body of an oxide semiconductor is highly purified and is an intrinsic semiconductor or a substantially intrinsic semiconductor whose carrier density is low. The stacked body of an oxide semiconductor has a wider band gap than a silicon semiconductor.

An object is to manufacture a semiconductor device including an oxide semiconductor film, which has stable electric characteristics and high reliability. A crystalline oxide semiconductor film is formed, without performing a plurality of steps, as follows: by utilizing a difference in atomic weight of plural kinds of atoms included in an oxide semiconductor target, zinc with low atomic weight is preferentially deposited on an oxide insulating film to form a seed crystal including zinc; and tin, indium, or the like with high atomic weight is deposited on the seed crystal while causing crystal growth. Further, a crystalline oxide semiconductor film is formed by causing crystal growth using a seed crystal with a hexagonal crystal structure including zinc as a nucleus, whereby a single crystal oxide semiconductor film or a substantially single crystal oxide semiconductor film is formed.

A method and apparatus for depositing III-V material is provided. The apparatus includes a reactor partially enclosed by a selectively permeable membrane 12. A means is provided for generating source vapors, such as a vapor-phase halide of a group III element (IUPAC group 13) within the reactor volume 10, and an additional means is also provided for introducing a vapor-phase hydride of a group V element (IUPAC group 15) into the volume 10. The reaction of the group III halide and the group V hydride on a temperature-controlled substrate 18 within the reactor volume 10 produces crystalline III-V material and hydrogen gas. The hydrogen is preferentially removed from the reactor through the selectively permeable membrane 12, thus avoiding pressure buildup and reaction imbalance. Other gases within the reactor are unable to pass through the selectively permeable membrane.

A facet-forming layer made of nitride semiconductor containing at least aluminum is formed on a substrate made of gallium nitride (GaN). A facet surface inclined with respect to a C-surface is formed on the surface of the facet-forming layer, and a selective growth layer laterally grows from the inclined facet surface. As a result, the selective growth layer can substantially lattice-match an n-type cladding layer made of n-type AlGaN and grown on the selective growth layer. For example, a laser structure without cracks being generated can be obtained by crystal growth.

High throughput screening of crystallization of a target material is accomplished by simultaneously introducing a solution of the target material into a plurality of chambers of a microfabricated fluidic device. The microfabricated fluidic device is then manipulated to vary the solution condition in the chambers, thereby simultaneously providing a large number of crystallization environments. Control over changed solution conditions may result from a variety of techniques, including but not limited to metering volumes of crystallizing agent into the chamber by volume exclusion, by entrapment of volumes of crystallizing agent determined by the dimensions of the microfabricated structure, or by cross-channel injection of sample and crystallizing agent into an array of junctions defined by intersecting orthogonal flow channels.

A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.

PCT No. PCT/JP92/00149 Sec. 371 Date Oct. 14, 1992 Sec. 102(e) Date Oct. 14, 1992 PCT Filed Feb. 14, 1992 PCT Pub. No. WO92/14542 PCT Pub. Date Sep. 3, 1992A colorless and transparent, substantially inclusion-free diamond crystal which can be applied to decorative uses and optical parts is synthesized by a process using a temperature gradient method in an ultra-high pressure apparatus. This process comprises using, as a solvent for the growth of the crystal, at least one metal selected from the group consisting of Fe, Co, Ni, Mn and Cr (at least two metals in the case of containing Fe) and as a nitrogen getter for the removal of nitrogen in the solvent, at least one metal selected from the group consisting of Al, Ti, Zr, Hf, V, Nb and Ta in a proportion of 0.5 to 7% by weight (at most 2% by weight when using only Al) to the solvent metal.