253 results about "Crystal growth" patented technology

Crystal growth systems with a baffle are provided. In one example, a crystal growth system for growing crystalline material, the crystalline material including silicon carbide, includes a seed holder configured to hold a silicon carbide seed crystal. The seed crystal provides a growth surface for growth of the silicon carbide crystalline material. The system includes a crucible at least partially defining a crystal growth chamber. The system includes a source material. The system includes one or more baffles within the crystal growth chamber and spaced apart from the source material. The one or more baffles include one or more apertures defined through the one or more baffles. The baffle includes a long dimension that is non-perpendicular to the growth surface of the seed crystal.

Crystal growth systems for growing crystalline material comprising silicon carbide are provided. In one example, the crystal growth system includes a crucible at least partially defining a crystal growth chamber. The crystal growth chamber has a plurality of zones, each zone associated with a different processing profile. The system includes a silicon carbide crystal. The system includes a source material.

Systems and methods for defect mitigation in silicon carbide crystal growth systems are provided. In an aspect, an example method includes providing a crystalline material in a first zone of the crystal growth chamber. In some implementations, the example method includes providing a silicon carbide vapor source material in a second zone of the crystal growth chamber. The example method includes providing an etching agent in the crystal growth chamber. The example method includes controlling a temperature gradient in the crystal growth chamber such that a first temperature in the first zone is greater than a second temperature in the second zone to implement an etching process on the crystalline material in the crystal growth chamber.

The application discloses a kind of virus-like hierarchical microspheres of Cu doped SnO2 with adjustable morphology prepared by molten salt method, preparation method and application thereof.Using the strategy of template pyrolysis-molten salt synergistic regulation, CuO / SnO2 p-n heterojunction material with unique virus-like multi-level structure is successfully constructed.Firstly, pure phase SnO2 microsphere substrate is obtained by liquid phase deposition combined with calcination, then it is mixed with molten salt and copper salt, and directional induction effect of molten salt polarity environment on crystal growth is used, so that controllable epitaxial growth of SnO2 microsphere surface needle-like structure virus-like spike morphology and in-situ doping of Cu atom are realized through two-stage heat treatment, and finally virus-like hierarchical microspheres with dense needle-like protrusions on the surface are formed.When it is applied to H2S sensor, based on the "insulation-metal" phase transition effect triggered by specific reaction of CuO and H2S, the response value to 10 ppm H2S is as high as 57269 at low working temperature of 160 DEG C, which is improved by 2 orders of magnitude compared with similar materials, and it also shows excellent long-term stability (decay rate <5% for 30 days).

This invention relates to the field of menthol production technology, and in particular to a freeze-drying apparatus and process for producing high-purity menthol. The apparatus includes a tank structure, with a crystallization cylinder at the top and a crystal growth cylinder at the bottom. A pre-cooling mechanism is located at the top of the crystallization cylinder, and a transfer mechanism is located inside. The pre-cooling mechanism includes a cooling cylinder with multiple pre-cooling tubes inserted inside. A first pipe for supplying a cooling medium is connected to the cooling cylinder. A second pipe for supplying a cooling medium is located inside the wall of the crystallization cylinder. A pad is installed at the top of the crystallization cylinder, and through holes are formed on the pad to mate with the multiple pre-cooling tubes. The cooling cylinder can rotate relative to the crystallization cylinder, allowing the pre-cooling tubes to connect to the through holes. The process includes pre-cooling, crystallization, and crystal growth. This invention enables continuous menthol production. By setting a temperature gradient, the overall temperature of the tank structure does not need to be adjusted, thus saving energy.

The utility model discloses a kind of ammonium tungstate mother liquor crystallization settlement processing device, including support plate;Still including crystallization tank and horizontal screw centrifuge, the upper end of support plate is provided with three crystallization tanks, three crystallization tanks are connected in series, spiral flow guide plate for prolonging mother liquor path is arranged in crystallization tank, stirring blade for stirring anti-deposition is arranged in crystallization tank, last crystallization tank is connected with inclined plate settling tank, multiple polypropylene corrugated plate groups that are set in forty-five degree angle inclination in inclined plate settling tank, the lower end of inclined plate settling tank is provided with bottom ultrasonic transducer for preventing crystal plate concretion.The utility model is provided with three crystallization tanks to improve mother liquor flow time, spiral flow guide plate is arranged in crystallization tank simultaneously, improve mother liquor prolong path, promote crystal growth, then through inclined plate settling tank to improve settlement efficiency, complete through horizontal screw centrifuge to carry out the cycle of crystal liquid separation, improve the problem of mother liquor crystallization settlement and recovery rate deficiency.

The application discloses a device and method for synthesizing and separating cerium silicide, and belongs to the technical field of crystal growth. The device for synthesizing and separating cerium silicide comprises a crucible main body, an inner cavity of the crucible main body being a circular truncated cone cavity with a cross-sectional size gradually decreasing from top to bottom, an ejection rod arranged at the bottom of the inner cavity of the crucible main body, and a base used for bearing the crucible main body and provided with a through hole through which the ejection rod passes, wherein the ejection rod is configured to be driven through the through hole to eject the solidified cerium silicide ingot in the inner cavity of the crucible main body in the axial direction. The application can realize lossless and efficient taking out of the synthesized product of cerium silicide by designing the crucible main body with the circular truncated cone cavity and integrating the ejection mechanism, and radial separation force is generated in the ejection process.

This invention provides a crucible and a method for growing silicon carbide crystals, belonging to the field of silicon carbide preparation technology. The crucible includes a graphite body, a first cover, and a second cover. The graphite body has a first cavity with an opening at its top. The first cover is disposed on the opening, and its side facing the first cavity is used to fix a seed crystal. The first cover has a channel that penetrates the first cover along its height. The second cover is disposed on the first cover, and a second cavity is formed between the second cover and the first cover. The crucible and silicon carbide crystal growth method provided by this invention can utilize the hexagonal void defect formed on the back of the seed crystal during crystal growth, using this defect as a channel to introduce molten dopant elements from the top of the seed crystal into the growing silicon carbide crystal, thereby forming a uniformly distributed optical and color effect within the grown crystal.

This invention relates to a crystal growth apparatus, method, and application based on thermal convection mass transfer, belonging to the field of crystal material preparation technology. The invention aims to solve the problems of spontaneous nucleation, secondary nucleation, and the intrusion of impurities into the growth zone leading to decreased crystal quality, as well as poor interfacial stability caused by mechanical stirring, in existing single crystal preparation processes. The method involves: 1. Establishing a temperature field and gradient; 2. Adding crystal raw materials and growth media to the dissolution zone reactor, ensuring the crystal raw materials form a saturated solution in the dissolution zone reactor with some solid raw material remaining, suspending the seed crystal; 3. Not adding crystal raw materials to the high-temperature zone reactor; 4. Cooling after growth to obtain a single crystal. This invention reduces the probability of microcrystals / clusters entering the growth zone, and reduces interfacial disturbance and further suppresses the intrusion of impurities into the growth zone without introducing mechanical stirring, resulting in higher crystal quality.

The application provides a device and method for growing 6-inch ultra-low dislocation germanium single crystal by VGF+VB method, and belongs to the technical field of semiconductor crystal growth equipment. The device comprises a furnace body, at least six segments of independent temperature control heaters arranged in the furnace body along an axial direction, a flexible adjustable heat insulation structure, a PBN crucible system for loading seeds and raw materials, and a precision lifting device for realizing relative movement between the crucible and the furnace body. An accurate axial temperature gradient is constructed and moved by the multiple independent heaters, the radial heat loss is controlled by the adjustable heat insulation structure, and the multiple variable decoupling control technology is used to cooperatively and accurately control each temperature zone, so that the crystal growth dislocation, thermal stress and the solid-liquid interface shape are accurately controlled, and the high-efficiency, high-quality and ultra-low dislocation density growth of the 6-inch germanium single crystal is realized.

This application relates to a method, system, device, and medium for controlling crystal growth fluctuations, belonging to the field of crystal growth equipment control technology. The method includes: acquiring real-time output power and input voltage signals from a digital inductive power supply; identifying abnormal fluctuations in output power based on the input voltage and extracting abnormal fluctuation power data; calculating target water flow velocity adjustment data based on abnormal energy and heat balance mapping, and converting it into a target driving voltage; determining whether the target voltage exceeds a safety threshold; if it does, clamping it to the threshold and extending the time; otherwise, using it directly; and outputting a driving signal to the electrodes according to the final voltage and time, fine-tuning the primary buffer cooling water flow rate before it flows into the induction coil. This application utilizes electromagnetic fine-tuning of the cooling water flow rate to accurately counteract the interference of inductive power supply power fluctuations on the crystal growth environment, improving the energy stability of the crystal growth process and ensuring crystal quality.

An apparatus for perovskite fabrication, the apparatus comprising: a chemical vapour deposition (CVD) processing chamber configured to communicate with a first vapour source and a passivation vapour source, wherein the CVD processing chamber is configured to receive: (i) a substrate; (ii) first vapour from the first vapour source; and (iii) passivation vapour from the passivation vapour source; and a heatable substrate holder disposed in the processing chamber, the heatable substrate holder configured to: (i) support the substrate; and (ii) heat the substrate to facilitate perovskite crystal growth on the substrate.

The application belongs to the technical field of pesticide preparation processing, and particularly relates to application of a dispersant composition in inhibiting crystal growth of a pesticide suspension preparation and a pesticide suspension preparation. The application provides application of a dispersant composition in inhibiting crystal growth of a pesticide suspension preparation, wherein the dispersant composition comprises a polycarboxylate dispersant and a mixed high-molecular dispersant containing sulfonic acid groups and carboxyl groups; and a fungicide component in the pesticide suspension preparation is a succinate dehydrogenase inhibitor. The polycarboxylate dispersant and the mixed high-molecular dispersant containing sulfonic acid groups and carboxyl groups are combined, which can effectively inhibit the growth of succinate dehydrogenase inhibitor crystals in the pesticide suspension preparation, and has the effects of viscosity reduction and anti-paste of the pesticide suspension preparation, so that the pesticide suspension preparation can be free of crystal precipitation at variable temperatures, has good fluidity, and has high cold and hot storage stability.

This invention discloses a stirred synthesis method for the production of 5-methyluridine, comprising the following steps: S1. forming a homogeneous initial reaction system; S2. obtaining a uniformly mixed intermediate reaction system with consistent temperature distribution; S3. obtaining a final reaction system; S4. obtaining a crystallization-inducing system; S5. obtaining a crystal-mother liquor suspension system; S6. obtaining a mature suspension system with completed crystal growth; S7. stopping depressurized bubbling and gradually reducing the shear pulse amplitude while maintaining low-speed three-dimensional suspension flow field stirring to age the crystals, obtaining an aged crystal suspension system; S8. terminating stirring to obtain the target product, 5-methyluridine crystals. After drying, the residual solvent content of 5-methyluridine in this invention is less than 0.05%, and its color and melting point meet pharmaceutical-grade standards.

This invention discloses a management method and system for a dopant used in crystal furnace growth, belonging to the field of wafer production control technology. The method includes: analyzing meniscus images to obtain meniscus features and microstructural waves of the crystal melt; determining amplification weights based on meniscus features; determining enhancement factors based on microstructural waves; predicting baseline and micro-perturbation prediction values ​​of solid-phase doping concentration using a baseline prediction model and a perturbation prediction model based on internal state signals and meniscus features; adjusting the micro-perturbation prediction values ​​using amplification weights and enhancement factors to obtain adjusted perturbation values; combining the baseline prediction values, adjusted perturbation values, and preset anomaly indicators; outputting a risk index for crystal growth using an evaluation model; and adjusting the equipment parameters of the dopant based on the risk index. This invention enables early risk warning of crystal growth status.

This invention belongs to the field of single-crystal rock sugar preparation and discloses a cage-type single-crystal rock sugar crystallizer. The rotating cage is immersed in the mother liquor in the mother liquor tank. The inner cavity of the rotating cage is divided into multiple chambers by partitions. Each chamber is equipped with a discharge auger, which can automatically discharge the material using a drive device and a power cylinder. The crystallizer is driven by a drive device to provide rotation speed, realizing intermittent heat exchange between the material inside the rotating cage and the external air. At the same time, sucrose molecules can be replenished to the surface of the single-crystal rock sugar in a timely manner, so that the temperature of the crystal grains wrapped in sugar liquor alternately decreases. The sugar liquor is kept at a supersaturation of 1.03 to 1.06. Driven by the supersaturation, the crystal grains continuously crystallize to form single-crystal rock sugar. The entire cooling and crystallization method does not require a vacuum or additional steam. The material only exchanges heat with the air, resulting in low energy consumption. It can achieve uniform crystal growth within the temperature range within 72 to 80 hours, reaching the desired particle size of the crystal product. The produced single-crystal rock sugar crystals are of high quality and uniform particle size.

This invention relates to the field of ternary precursor technology, and discloses a high-nickel ternary precursor, its preparation method, and its application. A two-stage continuous process is employed. First, a precursor nucleus is prepared using a high-rotation-rate, low-ammonia-concentration, and high-pH process. Then, a shell is prepared using a low-rotation-rate, suitable-ammonia-concentration, and suitable-pH process, achieving precursor crystal growth along the ternary precursor matrix. <101> Preferential crystal plane growth and an XRD peak intensity ratio I101 / I001 > 1.2. The prepared high-nickel ternary cathode material, under 3.0–4.3V conditions with a 1.0C / 1.0C charge-discharge regime, achieved an initial discharge of 206 mAh / g and an initial coulombic efficiency > 96.0%; under 3.0–4.3V conditions with a 0.1C / 0.1C charge-discharge regime, the initial discharge reached 230 mAh / g with an initial coulombic efficiency above 92.50%, and the 1C / 0.1C capacity retention rate ≥ 89.5%, demonstrating excellent electrical performance.

This invention provides a method for preparing a high-performance potassium adsorbent for potassium extraction from seawater, belonging to the field of ion adsorbent technology. The present invention features a large potassium adsorption capacity, high ion exchange site density, and outstanding enrichment capacity for low-concentration potassium ions. It exhibits very low adsorption capacity for calcium and magnesium ions in the influent, precisely rejecting high concentrations of coexisting sodium, calcium, and magnesium ions, achieving exclusive adsorption only for potassium ions, resulting in high purity of the enriched product. It possesses a highly stable crystal framework structure resistant to acids and alkalis, improving the cycling stability of the potassium adsorbent. The small crystal size is beneficial for increasing the adsorption capacity of the potassium adsorbent; due to the small crystal size, growth is more complete, with fewer crystal defects, which is conducive to improving selectivity and cycling stability. The three-stage calcination crystallization process allows different materials to undergo precise chemical reactions or crystal growth at different temperature stages, facilitating the acquisition of potassium adsorbent crystals with high adsorption capacity, high selectivity, and high cycling stability.

1. Name of the product in this design: Graphical User Interface for Data Management and Analysis System of Crystal Growth Furnace for Electronic Equipment. 2. Purpose of this design: For data processing. 3. The key design feature of this product lies in the graphical user interface on the screen. 4. Images or photos that best illustrate the design key points: Interface state change diagrams. 5. Uses of the graphical user interface: It assists crystal growth process personnel in managing and analyzing data in multiple dimensions, including the changing trends of various key parameters in the historical crystal growth data, the numerical records of various key parameters in the historical crystal growth data, and the comparative analysis of different historical crystal growth data. 6. Description of the changing states of the graphical user interface: After entering the correct username and password in the main view and clicking the login button, the interface changes as shown in the diagram.

The present invention provides an assistance device, an assistance method, and an assistance program that are for assisting operation of a crystal growth furnace. An assistance device according to the present invention comprises: a calculation unit that outputs a temperature distribution of a crystal surface on the basis of temperature data measured in a crystal growth furnace, information indicating the position and output of a heating device which heats the crystal growth furnace, and information indicating the position of the crystal surface in the crystal growth furnace; and a display unit that displays the temperature distribution of the crystal surface output by the calculation unit.

This application provides a solar cell, a method for fabricating the same, an electrical device, and a power generation device. According to an embodiment of this application, the solar cell includes: a first electrode, a passivation layer, a photoelectric conversion layer, and a second electrode stacked along the thickness direction of the solar cell. The passivation layer comprises an organic polymer and a spacer. The organic polymer comprises polymer chains, and the spacer is distributed between the polymer chains and is a small organic molecule with a relative molecular mass less than or equal to 300. The small organic molecule spacer occupies a certain space in the passivation layer to regulate the sparsity of the polymer chains. Regulating the sparsity of the polymer facilitates the provision of effective crystal growth sites for the light-absorbing material of the photoelectric conversion layer on the surface of the passivation layer away from the first electrode. This reduces crystal defects caused by abnormal nucleation at the boundary of the perovskite light-absorbing layer, reduces non-radiative recombination behavior of charge carriers, and thus improves the stability of the solar cell.

The present disclosure provides an apparatus and method for growing high-quality silicon carbide crystals and silicon carbide crystals, and relates to the technical field of the silicon carbide crystals. In the apparatus, a pressure equalizing structure is arranged on the annular guide plate, a pressure difference between a second chamber above the annular guide plate and a first chamber below the annular guide plate can be effectively reduced, and the flow rate of the gaseous-phase crystal growth components at a gap between a top end of the annular guide plate and an edge of the seed crystal can be effectively reduced accordingly, and then the defects such as a “concave interface” on the silicon carbide crystals growing on the seed crystal are avoided, thereby improving the growth quality of the silicon carbide crystals. The silicon carbide crystals prepared by the method have characteristics of fewer defects and high quality.

This invention relates to a phosphate-containing chiral diastereomeric oxime ester compound, its preparation method, and its applications, belonging to the field of organic synthesis technology. This invention introduces a chiral center at a specific location in the molecular structure of the oxime ester compound to form a mixture of diastereomeric stereoisomers. The introduction of the chiral center interferes with intermolecular chiral recognition, thereby effectively suppressing the π-π stacking effect and crystal growth between the aromatic ring cores. Furthermore, the introduction of the phosphate ester structure into the product effectively improves its solubility in propylene glycol methyl ether acetate or cyclohexanone solvents. The photocurable ink prepared using the diastereomeric oxime ester compound of this invention exhibits excellent storage stability and better photosensitivity.

This invention relates to the field of polymer materials technology and discloses a method for preparing a high-adhesion carboxylated styrene-butadiene latex for sealing. After pre-alkalization of the base latex, a citric acid-modified solution is pumped in at a constant rate while dynamically adjusting the pH value to construct a dynamic hydrogen bond network. After thermodynamic infiltration, a crosslinking aid is added to induce multi-level self-assembly, and the growth of citric acid crystals is controlled by gradient temperature-controlled drying. Through the above scheme, this invention achieves a synergistic improvement in material strength, self-healing properties, and shape memory function. It exhibits high peel strength and excellent high-temperature creep resistance, and can automatically repair microscopic damage and achieve spontaneous compensation of sealing morphology.

This invention provides an apparatus and method for liquid-phase growth of SiC crystals. The apparatus includes a graphite crucible and a seed crystal fixing mechanism. The inner wall of the graphite crucible is covered with a ring-shaped tantalum carbide coating circumferentially surrounding its inner wall. This ring-shaped tantalum carbide coating is located in the expected fluctuation region of the melt surface during crystal growth. This invention utilizes the excellent wettability and chemical stability of tantalum carbide with silicon-based melts to fundamentally solve problems such as instability of the liquid surface, uneven distribution of the thermal and solute fields, uneven crucible corrosion, and heterogeneous nucleation on the sidewalls caused by poor wettability between the melt and the graphite crucible. This method can significantly stabilize the growth interface, improve the stability and repeatability of crystal growth, and ultimately obtain SiC crystals with higher crystal quality and lower defect density.

The application discloses a preparation method and application of a rare earth cluster scintillator, and the scintillator material is prepared from 4,7-diphenyl-1,10-phenanthroline, 4-tert-butyl benzoic acid, titanium tetraisopropoxide and europium(III) acetate by a solvothermal reaction. The rare earth cluster scintillator material Eu2Ti4 prepared in the application has excellent flexibility and can be used for flexible imaging of non-planar materials. The minimum detection limit of the obtained scintillator is 32.89 nGy s ‑1 , which is 167 times lower than a standard medical diagnostic dose. The rare earth cluster scintillator process is simple, has high yield and fast crystal growth. The limit resolution of the Eu2Ti4-PDMS scintillation screen in the application exceeds 31 LP mm ‑1 at different temperatures, and the scintillation screen has excellent high-resolution X-ray radiation imaging capability and can be used as an ideal visualization tool for high-performance radiation imaging in extreme environments.

The utility model discloses a kind of for crystal growth device's crucible assembly and crystal growth device, it is related to crystal growth technical field, crucible assembly includes: crucible main body and crucible cover, crucible main body defines and installs groove, crucible cover cover is located at the open end of installation groove;At least part of flow guide part structure is located in installation groove, flow guide part structure and crucible main body jointly define and accommodate cavity, accommodate cavity accommodates solution for crystal growth, crucible cover and flow guide part structure are used for the upper pulling shaft of crystal growth device to pass through, flow guide part structure is also configured to inhibit the evaporation loss of corresponding solute in the case where solution in accommodating cavity vaporizes and grows crystal. By setting flow guide part structure, the evaporation loss of corresponding solute can be inhibited, it is favorable to reduce that solution component changes too much risk, to maintain the growth environment of crystal long-term stability, it is favorable to crystal high quality, long time stable growth, effectively improve crystal quality.

In silicon carbide crystal growth, this method eliminates the need for precise control of temperature gradients and gas flow paths, suppresses the occurrence of crystal defects and thermal distortion, and improves the efficiency of silicon carbide raw material utilization, thereby increasing the productivity of silicon carbide substrates and reducing manufacturing costs. [Solution] By sublimating the silicon carbide sublimation surface of the raw material substrate and applying gravitational acceleration to transport the silicon carbide growth surface of the growth substrate stably and uniformly, it is possible to form multiple silicon carbide growth layers simultaneously without requiring a temperature gradient. Furthermore, by preventing the silicon carbide raw material from leaking from the back surface of the growth substrate or from the gap between it and the raw material substrate, the utilization efficiency of the silicon carbide raw material is increased, thereby enabling improved productivity and reduced manufacturing costs.

The application discloses a kind of sodium fluorosilicate production optimization calculation method, the surface energy of different crystal faces of sodium fluorosilicate is calculated, and the minimum crystal face is selected;For the minimum crystal face of the surface energy, preset the surface of electronic density is used to draw and display surface electrostatic potential and calculate energy;Obtain a preset number of impurity ions, calculate the energy of the preset number of fluorine ions in the minimum crystal face of the surface energy replaced by the impurity ions, and output the energy difference after replacement according to the calculated energy.The application calculates the surface energy of different crystal faces of sodium fluorosilicate, selects the minimum crystal face of the surface energy as the leading crystal face and carries out subsequent calculation.Then, the energy change of the fluorine ion in sodium fluorosilicate replaced by impurity ion is calculated, the binding energy of impurity ion and sodium fluorosilicate leading crystal face is shown by calculation result, the energy change of crystal surface energy and crystal growth caused by impurity ion is given, and the influence of impurity on sodium fluorosilicate production can be accurately judged according to the energy.