2018 results about "Crystal growth" patented technology

Crystal growth systems with a baffle are provided. In one example, a crystal growth system for growing crystalline material, the crystalline material including silicon carbide, includes a seed holder configured to hold a silicon carbide seed crystal. The seed crystal provides a growth surface for growth of the silicon carbide crystalline material. The system includes a crucible at least partially defining a crystal growth chamber. The system includes a source material. The system includes one or more baffles within the crystal growth chamber and spaced apart from the source material. The one or more baffles include one or more apertures defined through the one or more baffles. The baffle includes a long dimension that is non-perpendicular to the growth surface of the seed crystal.

The invention belongs to the technical field of silicon carbide single crystal materials, and particularly relates to a growth device of large-size silicon carbide single crystals and a preparation method of the silicon carbide single crystals, porous graphite cylinders are arranged in a powder area of the growth device of the large-size silicon carbide single crystals, and the porous graphite cylinders are distributed along the edge of the powder area to the center in a stepped mode. The height is gradually increased from the edge to the center; a plurality of layers of stacked graphite pore plates are arranged at the top of the powder area, the upper end parts of the porous graphite cylinders are flush with the upper surfaces of the corresponding layers of graphite pore plates, and the porous graphite cylinders penetrate through the graphite pore plates, so that a continuous gas phase transmission channel from the powder area to the crystal growth area is formed. According to the invention, the plurality of porous graphite cylinders are arranged in the silicon carbide raw material area in a stepped manner, so that the temperature field distribution of the raw material area is stabilized, the gas phase layout is optimized, impurities in gas phase components are filtered, and the defects of microtubes, inclusions, dislocation and the like in crystals are improved.

The invention relates to the field of Czochralski single crystal furnace crystal bar production, in particular to a Czochralski single crystal shouldering control system, which comprises a CCD (Charge Coupled Device) information acquisition unit, a computer information storage processing unit and a PLC (Programmable Logic Controller) growth regulation unit, the computer information storage processing unit receives information acquired by the CCD information acquisition unit, then performs cloud data storage processing and outputs single crystal shoulder information of a corresponding time node to the PLC growth regulation unit, and the PLC growth regulation unit performs shouldering cooling amount control, automatic crucible lifting intervention in the shouldering process, automatic intervention control of equal-diameter liquid opening distance and pulling speed control. According to the method, the problems of shouldering line breakage and equal-diameter head line breakage caused by the fact that automatic regulation of the current shouldering pulling speed does not conform to actual growth of crystals are solved, and the consistency of field process parameter management is improved.

The invention discloses a power battery thermal runaway fault detection method and system based on multi-source parameters, and belongs to the technical field of battery management, and the method comprises the steps: inputting a high-frequency signal generated by a signal generator to a positive electrode feed point of a battery cell, connecting a coaxial line to a positive electrode, and grounding a negative electrode to form a grounding loop; the collected dendritic crystal reflection signals are analyzed, a quantitative correlation model is established, the growth condition of dendritic crystals is analyzed according to the quantitative correlation model, and preliminary early warning is carried out; electrochemical parameters and auxiliary parameters of the battery cell are collected, and cross validation is carried out on the electrochemical parameters and the auxiliary parameters and preliminary early warning of dendritic crystals; and establishing a dynamic risk and grading response mechanism, dividing the risk into different grades, and setting corresponding response measures. In the implementation process of the technical scheme provided by the invention, by combining dendritic crystal growth prediction and electrochemical parameter analysis, accurate monitoring of the internal state of the power battery is realized, the timeliness and accuracy of thermal runaway early warning are effectively improved, and safe and stable operation of a battery system is ensured.

The invention provides a method for preparing an iron-based superconducting material single crystal in a microgravity environment, and belongs to the field of superconducting materials. The method specifically comprises the following steps: carrying out a microgravity crystal growth experiment in a high-temperature experiment cabinet of a space station, putting a solid-phase sintered or pre-melted rod-like raw material into a furnace body, heating and melting, then slowly solidifying, and finally growing the iron-based superconducting material single crystal with large size and extremely low defect density.

The invention discloses an automatic quality monitoring system based on a nickel hydrazine nitrate manufacturing technology, and relates to the technical field of nickel hydrazine nitrate manufacturing. The system has the functions of integrating a multi-wavelength filter wheel module, a process stability monitoring module and the like, and full-parameter real-time monitoring of the reaction process is realized. A Savitzky-Golay filtering algorithm is adopted to calculate a reaction rate, an XGBoost model is combined to predict a quality grade, and a hierarchical control strategy is designed to cope with different quality risks. And the risk assessment module simulates a crystal growth process by using a reaction kinetic model, identifies key risk factors, constructs a risk matrix to divide production areas, and generates an assessment report. Spectral data are corrected through a three-dimensional compensation matrix, the type of a quality problem is judged by adopting a double-layer fusion algorithm, and closed-loop control is realized in combination with a PID controller and an emergency emission program. A monitoring interface displays key parameters and early warning information in real time, dynamic adjustment of process parameters is supported, the production process is optimized, and the product quality and the production efficiency are improved.

The invention provides a crystal growth device and a crystal growth method, and solves the technical problems of low wafer utilization rate, low crystal growth speed, low efficiency, poor uniformity and the like in the existing chip manufacturing process. According to the invention, a traditional cylindrical ampoule structure is abandoned, and the annular ampoule design is innovatively adopted, so that the crystal grows into an inner hollow cylinder shape which is highly matched with the specification of a target wafer; the heater is arranged on the inner side of the ampoule, a traditional outer side heating mode is replaced, and heat is intensively acted on crystals in cooperation with an adjusting center of a heat preservation material during crystal growth, so that heat loss is reduced; the periphery of the heater is made of heat insulation materials, heat radiation leakage is effectively restrained, meanwhile, the ampoule supporting structure is adjusted, and the whole device is simple, low in cost and light in weight.

An object of the present invention is to provide a novel technique capable of manufacturing a large-diameter AlN substrate.The present invention is a method for manufacturing an AlN substrate, including a crystal growth step S30 of forming an AlN layer 20 on a SiC underlying substrate 10 having through holes 11. In addition, the present invention is a method for forming an AlN layer including the through hole formation step S20 of forming the through holes 11 in the SiC underlying substrate 10 before forming the AlN layer 20 on the SiC underlying substrate 10.

The invention provides a combined crucible and an oxide crystal growth method.The combined crucible is used for oxide crystal growth and comprises a first ceramic crucible, a second ceramic crucible, a third ceramic crucible and a fourth ceramic crucible, the graphite layer is arranged in the first ceramic crucible; the second ceramic crucible comprises a second containing space with the top open and the bottom closed, and the second ceramic crucible is arranged in the graphite layer. The combined crucible is designed by adopting an iridium-free scheme, so that the cost of the crucible can be greatly reduced.

This application provides a crystal growth method and crystalline silicon, relating to the field of solar photovoltaic technology. The method comprises: performing a leak test on a single crystal furnace under a first furnace pressure; adding a dopant to the single crystal furnace under a second furnace pressure; wherein the second furnace pressure is greater than the first furnace pressure; and performing a crystal pulling process after adding the dopant. This application can reduce axial concentration distribution differences of doping elements in doped single crystal silicon, improve axial resistivity uniformity of the single crystal silicon, and enhance production efficiency.

The invention belongs to the technical field of photovoltaic solar materials, and particularly relates to a high-conversion-efficiency perovskite precursor material and a preparation method thereof. The high-conversion-efficiency perovskite precursor material is composed of phenyl ammonium cesium composite cations, metal halide, an additive, a nuclear auxiliary agent and a solvent. By compounding phenylethyl ammonium iodide and cesium iodide, phenylammonium and cesium cations are introduced into perovskite crystal lattices, organic-inorganic balance of the material is optimized, phenylammonium promotes formation of a quasi-two-dimensional structure, and damp-heat stability is enhanced; cesium ions fill A-site gaps, so that crystal lattices are tighter, and the thermal stability and the photoelectric conversion efficiency are improved; the synergistic matching addition of the metal halide realizes band gap regulation and control and spectrum matching, and quaternary ammonium salt adjusts nucleation and grain growth, so that a uniform film structure is ensured, and defects are reduced; and guanidine salt passivates defects after crystal growth, stabilizes crystal lattices, and improves charge life and device efficiency.

The invention provides a crystal growth device and a crystal growth method for separating crystals from melts, and solves the defect that polycrystals are easy to generate during crystal growth at present. The growth device comprises a heat preservation furnace, a heater, a crystal growth crucible, a lining crucible, a lifting mechanism, a ceramic lifting seat, pressing graphite, a heat conduction graphite ring and a heat preservation ring, the crystal growth crucible is coaxially arranged in the heat preservation furnace; the heater is coaxially arranged between the crystal growth crucible and the holding furnace; the lining crucible is coaxially arranged in the crystal growth crucible and comprises a crucible bottom plate, a melt transmission channel and a crucible main body which are coaxial and communicated from bottom to top; in order to reduce the influence of the melt on the crystal in the growth process, the crystal and the melt are physically separated, the growth device with the two crucibles is designed, and in consideration of the importance of stable crystal growth thermal field environment, heat transfer of the two crucibles is isolated through the heat preservation ring; the heat-conducting graphite is used for uniformizing the temperature of the center and the edge of the melt, and concave liquid surfaces are avoided.

The utility model discloses a thermal field structure for X-cut lithium niobate crystal growth, the X-axis is defined to extend upwards, the thermal field structure comprises a thermal insulation structure and a crucible, both the thermal insulation structure and the crucible are elliptical cylinders with open upper ends and closed lower ends, when the thermal field structure is used, the crucible is placed in the thermal insulation structure, the central axes of the crucible and the thermal insulation structure coincide, and the central axes of the crucible and the thermal insulation structure coincide. The heat preservation structure is provided with a long axis a1 and a short axis b1, the crucible is provided with a long axis a2 and a short axis b2, the long axis of the heat preservation structure and the long axis of the crucible both extend in the Y-axis direction, the short axis of the heat preservation structure and the short axis of the crucible both extend in the Z-axis direction, and the grown lithium niobate crystal is an elliptic cylinder. According to the utility model, the problem that the crystal is easy to crack in the prior art is solved, and the success rate of the growth of the X-axis lithium niobate crystal is improved.

The present invention relates to the field of the preparation of silicon carbide crystals, and in particular to a device and method for the diameter expansion growth of a silicon carbide crystal. The device comprises a graphite diameter expansion device comprising a porous graphite diameter expansion ring. The porous graphite diameter expansion ring serves as a gas channel and is used for releasing an accumulated growth atmosphere during the diameter expansion growth of the silicon carbide crystal. The porous graphite diameter expansion ring not only ensures the smoothness of gas exhaust, but also solves the problem of polycrystalline silicon carbide growing on an edge of a silicon carbide seed crystal hindering the diameter expansion of the silicon carbide crystal. In addition, in the axial direction of the graphite diameter expansion device and in a direction away from the silicon carbide seed crystal, the porosity of the porous graphite diameter expansion ring gradually decreases, so that the growth atmosphere in a graphite crucible is controlled to ensure that the growth atmosphere can be discharged in time when the growth atmosphere is excessive in the early stage, and the discharge amount is reduced when the growth atmosphere in the later growth stage is insufficient, thus increasing the growth rate of the silicon carbide crystal. In addition, hard graphite felt is arranged around the diameter expansion device to serve as a heat insulation material, so that a rational temperature gradient of silicon carbide crystal growth is maintained.

The invention discloses a preparation method for effectively reducing defects of a perovskite solar cell body. A 4-fluorobenzenesulfonamide additive is introduced into a perovskite precursor solution, a sulfonyl group, a fluorine group and the like are coordinated with lead in perovskite, the crystallization process of the film is regulated and controlled, nucleation and crystal growth of an organic lead halide perovskite light absorption layer are effectively controlled, meanwhile, non-radiative recombination is inhibited, charge transfer is promoted, and the photoelectric conversion efficiency is improved. The photoelectric conversion efficiency is obviously improved, the cost is reduced and the repeatability is good. The additive is introduced by a solution method, the process is simple and the cost is low. Experimental results show that after the 4-fluorobenzenesulfonamide additive is used, the trap state density of a perovskite layer is reduced from 4.45 * 10 < 15 > cm <-3 > to 3.26 * 10 < 15 > cm <-3 >, and the photoelectric conversion efficiency of a perovskite cell is improved from 22.20% to 24.15%. The invention provides an efficient and low-cost solution for defect passivation of the perovskite solar cell.

The invention discloses an artemisinin extraction intelligent tracking and identification method, and relates to the technical field of image data processing. According to the method, an integrated closed-loop system is constructed through cooperation of four core technical means: based on classified filtering of foam stability difference and bimodal adaptive segmentation, dynamic foam is accurately removed, and preliminary interface extraction is optimized; the attention enhancement U-Net network is embedded into a channel attention module and an edge enhancement branch to realize accurate positioning and fluctuation tracking of a layered interface; the attention mechanism dynamically adjusts the bimodal weight, and completes multi-index cooperative tracking in combination with a partitioning strategy and an improved network; a crystal growth model is introduced to correct particle weight, a tracking effect is optimized by adopting layered resampling, and a closed-loop feedback mechanism of a crystal state and process parameters is established. All technical means are deeply coordinated, intelligent and accurate management and control of the whole extraction process are achieved, and reliable technical support is provided for artemisinin extraction production.

A crystal growth method and system, an apparatus, and a storage medium. The crystal growth method comprises: determining a parameter set of a crystal growth device in a target heat, wherein the parameter set comprises at least one target parameter, and the target parameter is a parameter, affecting crystal growth, in the crystal growth device; acquiring a first temperature measurement value of a first temperature measurement point of the crystal growth device in a target time period of the target heat; and on the basis of the target parameter and the first temperature measurement value, by means of a crystal plane temperature determination model, determining a simulated crystal plane temperature corresponding to the first temperature measurement value.

The utility model discloses a fine-grain nanocrystalline homogenization magnetic field stirring crystallizer capable of achieving an ecological cold-water-free accompanying system, and relates to the technical field of non-ferrous metal casting, the fine-grain nanocrystalline homogenization magnetic field stirring crystallizer comprises a fixed stirring assembly and a movable stirring assembly, and the fixed stirring assembly comprises a plurality of fixed coils evenly distributed on the periphery of the crystallizer; the movable stirring assembly comprises a plurality of movable coils evenly distributed on the periphery of the fixed stirring assembly, the movable coils and the fixed coils are distributed in an included angle mode, and the movable stirring assembly is configured to rotate and move relative to the fixed stirring assembly, so that the movable coils can be correspondingly matched with the fixed coils in the local area. Composite magnetic field distribution is formed in a corresponding local area, so that the magnetic field distribution condition of the local area is accurately adjusted, local directional stirring of the melt is achieved, the stirring effect of the melt is accurately controlled, it is ensured that the melt in each area can be uniformly stirred, and therefore the temperature cooling uniformity is improved, and the crystal growth quality and stability are guaranteed.

To provide a SiC ingot easily processed during laser processing.SOLUTION: A SiC ingot has a facet surrounded with the minimum area when setting a diameter to D and plan-viewed from a crystal growth direction. When setting the length of the first side of a virtual rectangle having a first side parallel to a <11-20>direction and a second side parallel to a <1-100>direction to Lx, Lx / D<0.3 is satisfied in a first end being an end in the crystal growth direction.SELECTED DRAWING: Figure 3

In a first step S101, the raw material is directly induction heated using a high-frequency induction heating coil (103) while cooling the outer periphery of a raw material (151) to or below the melting point of the raw material by a cooling mechanism (102) to form a raw material melt (152) (raw material melting step). In a second step S102, a seed crystal (161) is brought into contact with the melt (seeding step). In a third step S103, a crystal (153) is grown from the seed crystal (crystal growth step). In the third step S103, the high-frequency induction heating coil and the seed crystal are gradually separated from each other while maintaining the relative distance between the high-frequency induction heating coil and the outer periphery of the raw material, and the crystal is grown in the melt.

The embodiment of the invention provides a silicon carbide crystal growth furnace and a silicon carbide crystal growth method, the silicon carbide crystal growth method is applied to the silicon carbide crystal growth furnace, and relates to the technical field of silicon carbide crystal growth. The silicon carbide crystal growth furnace comprises a crucible, a first flow guide cover, a second flow guide cover and a filtering piece, the growth atmosphere in the crucible can flow upwards along an external cavity formed by the wall surface of the crucible and the second flow guide cover, and after reaching the top, the growth atmosphere flows downwards along the inner wall of the second flow guide cover and the outer wall of the first flow guide cover and finally enters a crystal growth cavity formed by the first flow guide cover and the second flow guide cover; and a filtering piece is arranged between the first flow guide cover and the second flow guide cover. Therefore, the speed of the growth atmosphere can be ensured to be relatively uniform, the concentration of the growth atmosphere is improved, and the growth quality of silicon carbide crystals is improved.

The invention discloses a growth device and method suitable for mass production of crystals by a fluxing agent method / liquid phase method. The growth method comprises the following steps: putting a seed crystal and a liquid phase growth raw material into a first growth container, putting the seed crystal into a second growth container, keeping the temperature of a first temperature zone at a first temperature T1, keeping the temperature of a second temperature zone at a second temperature T2, keeping the temperature of a third temperature zone at a third temperature T3, other growth conditions required by crystal growth are provided in the growth chamber; and rotating the rotary lifting frame to drive the second growth container and the seed crystal carried by the second growth container to rotate along a selected rotating track, so that the second growth container and the seed crystal carried by the second growth container are repeatedly transferred between the first temperature zone and the second temperature zone and are repeatedly immersed into the liquid phase growth raw material in the first growth container. The method can be used for industrially producing high-quality single crystals such as gallium nitride with different sizes in batches, and the production efficiency and quality are improved.

The invention relates to the technical field of crystal furnaces, in particular to a temperature control system and method for a crystal furnace, and the method comprises the steps: setting the target temperature of the crystal furnace, heating the crystal furnace through a heater, and monitoring the internal temperature of the crystal furnace in real time through a temperature sensor; crystal growth is guided through seed crystals in the crystal furnace, and airflow distribution in the crystal furnace is guided through a guide plate; determining whether the temperature control stability of the crystal furnace meets the requirement or not based on the maximum temperature difference quantity in the crystal furnace; if the temperature control stability of the crystal furnace does not meet the requirement, whether the duty ratio of a heater needs to be increased or not is determined; determining whether thermal management in the crystal furnace meets requirements based on the growth rate of the crystal in the crystal furnace; determining whether the rotation speed of the seed crystal needs to be increased; and determining whether the angle of the guide plate in the crystal furnace needs to be increased based on the fluctuation amplitude of the pressure in the crystal furnace. The temperature control stability of the crystal furnace is improved.

The invention discloses particle size controllable silicon carbide powder for silicon carbide crystal growth and a synthesis method and application thereof, and relates to the technical field of semiconductors. The preparation method comprises the following steps: reacting silicon elementary substance with carbon elementary substance in a vacuum environment to prepare silicon carbide powder; by adjusting the particle size of the silicon elementary substance, the particle size of the carbon elementary substance, the density of the carbon elementary substance and the molar ratio of carbon to silicon, the particle size of the silicon carbide powder can be efficiently controlled to be 4-6 times of the particle size of the carbon elementary substance; the synthesis method is simple in preparation process, the prepared silicon carbide powder is high in purity, the defect that the particle size of SiC powder synthesized in the prior art is small and uncontrollable is overcome, and the method is simple in used device, high in synthesis efficiency and suitable for large-scale industrial production.

The invention relates to the technical field of pressure detection, in particular to a single crystal furnace vacuum pipeline pressure measuring method and device. The method comprises the following steps: quantifying temperature deviation of a vacuum pipeline in a crystal growth process; carrying out matching analysis on the temperature data and the growth trend of the growth rate, and carrying out time delay identification on the temperature data and the growth rate through a matching section group; dynamic compensation of temperature lag is analyzed according to the relation between temperature data in the crystal growth process and the time delay change of the growth rate and the deviation change of pressure, and a delay compensation index is determined; and performing temperature data compensation according to the delay compensation index and the temperature offset to obtain current adjustment pressure measurement data. The dynamic accompanying condition of the temperature and the crystal growth is analyzed, the time delay compensation is determined through the accompanying time delay degree, the temperature data is compensated in combination with the temperature deviation, and the pressure is adjusted, so that the measured pressure data can more truly reflect the pressure condition in the crystal growth process, and the pressure measurement precision is improved.

The invention discloses a preparation method and application of an MFI zeolite membrane.The preparation method comprises the steps that an MFI zeolite nanosheet serves as a seed crystal, a uniformly-distributed and compact seed crystal layer is prepared on a carrier through a vacuum filtration method, namely, a nucleation center crystallized into a membrane is loaded on the surface of the carrier, and directional growth and membrane forming of the zeolite nanosheet can be effectively controlled; the highly b-oriented MFI zeolite membrane can be prepared within several hours, the prepared b-oriented MFI zeolite membrane shows a continuous and compact microstructure and almost has no defects, and compared with a traditional hydrothermal method, the method overcomes the defects that the reaction process is too long in time consumption, uneven in heating is prone to occurring, and the like. And therefore, the time required by crystal growth is greatly shortened. The prepared MFI zeolite membrane can be applied to pervaporation separation of xylene isomers, shows good size screening separation performance, and has important industrial application value.

The invention discloses an inflation method for regulating and controlling the growth rate of silicon carbide crystals and a related device, and relates to the technical field of semiconductors, and the inflation method comprises the following steps: obtaining the mass loss rate of a silicon carbide crystal growth system based on a weighing sensor; the quality loss rate is compared with a theoretical loss rate, a deviation rate is obtained, and the theoretical loss rate is the quality loss rate meeting the production requirement under the current technology; acquiring a growth stage parameter, judging whether the growth stage parameter reaches a preset value or not, if the growth stage parameter reaches the preset value, adopting a first control strategy, and if the growth stage parameter does not reach the preset value, adopting a second control strategy, the growth stage parameters comprise the silicon carbide crystal thickness corresponding to the preset crystal growth time. According to the method, the uniformity of the resistivity of the silicon carbide crystal is improved by regulating and controlling the doping gas proportion in the growth process of the silicon carbide crystal.

The invention provides a preparation method and application of a single crystal copper foil current collector for a negative-electrode-free lithium ion battery, and aims to improve the cycling stability and electrochemical performance of the battery. The preparation method comprises the following steps: (1) carrying out ultrasonic cleaning on the commercial copper foil by using hydrochloric acid, absolute ethyl alcohol and deionized water in sequence to remove surface pollutants; (2) a phosphoric acid and absolute ethyl alcohol mixed electrolyte is used for electrochemical polishing, and the surface smoothness and uniformity are improved; (3) performing high-temperature heat treatment on the sapphire substrate in high-purity argon to induce abnormal growth of crystal grains; (4) annealing in a reducing atmosphere of 1000-1100 DEG C to enhance the crystal orientation and crystallinity of Cu (111); and (5) rapidly cooling to room temperature, stabilizing the structure and preventing oxidation. When the obtained single crystal copper foil is used for the negative-electrode-free lithium battery, the single crystal copper foil is used as a negative electrode current collector to electrochemically deposit lithium metal and then is reassembled into the negative-electrode-free battery. The current collector is high in conductivity and stable in structure, lithium deposition uniformity can be remarkably improved, dendritic crystal growth is inhibited, the cycle life is prolonged, and safety is improved.

The invention belongs to the technical field of flame retardants, and particularly relates to a preparation method of bromotriazine, which comprises the following steps: adding phenol and deionized water into a reaction container, dropwise adding hydrogen peroxide and liquid bromine into a reaction system in a staggered manner, and adding a catalyst; after the reaction is finished, separating the catalyst, firstly carrying out quenching treatment on the filtrate, then carrying out extraction treatment, and carrying out reduced pressure distillation on the extracted organic phase to obtain tribromophenol; dissolving the prepared tribromophenol in dichloromethane, adding triethylamine and tetrabutylammonium bromide, stirring to form a homogeneous system, adding cyanuric chloride into the homogeneous system, and regulating and controlling the pH in stages; concentrating the organic phase which is washed to be neutral, adding n-hexane to initiate primary nucleation, dropwise adding ethyl acetate to adjust the polarity of the solvent, and promoting crystal growth; and filtering and drying in vacuum to obtain the bromo-triazine. Through staged pH / temperature regulation and control, the composite catalyst system realizes efficient synthesis of bromotriazine.

The invention discloses a dynamic detection method and system for crystal growth, relates to the technical field of crystal detection, and determines a corresponding crystal growth scene based on scene identification of each crystal growth area. And the crystal growth dynamic graph is determined according to the forms of the plurality of crystal characteristics, the corresponding time nodes and the corresponding crystal growth scenes, so that the accuracy of the crystal growth dynamic graph is ensured. Therefore, the abnormal part of the crystal characteristic is determined based on the identification of the abnormal area of the crystal growth dynamic graph, and the abnormal growth parameter of the crystal characteristic in the crucible is determined according to the tracing of the abnormal part of the crystal characteristic; the abnormal variable quantity is determined based on the traversal of the abnormal part of the crystal characteristic, and the local compensation measure of the crucible on the crystal characteristic is triggered according to the abnormal variable quantity and the spatial position of the abnormal part of the crystal characteristic, so that the accuracy of the local compensation measure of the crucible on the crystal characteristic is ensured; and dynamic detection and autonomous optimization of the crystal characteristics are realized.