The invention discloses a
static model of a SiC
MOSFET device based on physical characteristics, including the
drain current I. d Model, channel
voltage drop V ds Model, gate-source effective
voltage V gs The model and the model of the inversion layer channel carrier mobility μ. The
drain current I d The model is an improvement on the standard long-channel device model, characterized by the representation of physical processes such as
channel modulation effect and depletion layer bulk
charge effect; the gate-source effective
voltage model introduces the gate-source effective voltage V. gs The interface state trap is characterized by an asymptotic function as a function of the external gate-source voltage V. GS The process by which charge carriers gradually fill the space between the
MOSFET and the charge carriers. This model is highly versatile and has good characterization effects on different types of SiC
MOSFET devices. The model has high accuracy, and the
model parameters all have certain physical meanings, which is conducive to further
research based on this model. At the same time, the model is compact, the
simulation speed is fast, and it is suitable for circuit
simulation.