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1183results about "Polarisation-affecting properties" patented technology

Method and apparatus for the determination of mask rules using scatterometry

A method and apparatus for determining optical mask corrections for photolithography. A plurality of grating patterns is printed onto a wafer utilizing a photomask having at least one grating. Each grating pattern within the plurality of grating patterns is associated with known photolithographic settings. Each grating pattern is illuminated independently with a light source, so that light is diffracted off each grating pattern. The diffracted light is measured utilizing scatterometry techniques to determine measured diffracted values. The measured diffracted values are compared to values in a library to determine a profile match. A 2-dimensional profile description is assigned to each grating pattern based on the profile match. A database is compiled of the profile descriptions for the plurality of grating patterns. Photomask design rules are then generated by accessing the database containing the 2-dimensional profile descriptions. In preferred embodiments, the design rules are used to create and correct masks containing OPC corrections, phase-shifting mask corrections and binary masks. In a preferred embodiment the at least one grating is a bi-periodic grating. In a preferred embodiment, the scatterometry technique is optical digital profilometry utilizing a reflectometer or ellipsometer.

Parametric profiling using optical spectroscopic systems

A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

Evaluation method of semiconductor layer, method for fabricating semiconductor device, and storage medium

PCT No. PCT/JP98/02567 Sec. 371 Date Jan. 13, 1999 Sec. 102(e) Date Jan. 13, 1999 PCT Filed Jun. 10, 1998 PCT Pub. No. WO98/57146 PCT Pub. Date Dec. 17, 1998Measurement light, which has been emitted from a Xe light source (20) and then linearly polarized by a polarizer (21), is made to be incident at a tilt angle on a region in a silicon substrate (11) with crystallinity disordered by the implantation of dopant ions. And the spectra of cos DELTA and tan psi are measured with a variation of the measurement light, where DELTA is a phase difference between respective components in p and s directions as to the light reflected as an elliptically-polarized ray, and psi is a ratio between the amplitudes of these components. By correlating in advance the spectral patterns of cos DELTA and so on with the thickness of an amorphous region through a destructive test or the like, or by paying special attention to characteristic parts of the patterns of cos DELTA and so on, the thickness or the degree of disordered crystallinity of the amorphous region is estimated. Also, since a variation in the thickness of the amorphous region can be identified based on a variation of cos DELTA before and after a heat treatment, a temperature of the heat treatment can be sensed based on the variation of the thickness. Thus, an evaluation method allowing for nondestructive estimation of the thickness and the degree of disorder of a region, having crystallinity disordered by implanting dopant ions into a semiconductor region at a high level, can be provided.

Characterization of highly scattering media by measurement of diffusely backscattered polarized light

An apparatus and method for recording spatially dependent intensity patterns of polarized light that is diffusely backscattered from highly scattering media are described. These intensity patterns can be used to differentiate different turbid media, such as polystyrene-sphere and biological-cell suspensions. Polarized light from a He-Ne laser ( lambda =543 nm) is focused onto the surface of the scattering medium, and a surface area of approximately 4x4 cm centered on the light input point is imaged through polarization analysis optics onto a CCD camera. A variety of intensity patterns may be observed by varying the polarization state of the incident laser light and changing the analyzer configuration to detect different polarization components of the backscattered light. Experimental results for polystyrene-sphere and Intralipid suspensions demonstrate that the radial and azimuthal variations of the observed pattern depend on the concentration, size, and anisotropy factor, g, of the particles constituting the scattering medium. Measurements performed on biological cell suspensions show that intensity patterns can be used to differentiate between suspensions of cancerous and non-cancerous cells. Introduction of the Mueller-matrix for diffusely backscattered light, permits the selection of a subset of measurements which comprehensively describes the optical properties of backscattering media.
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