312 results about "Beam source" patented technology

Embodiments of systems, devices, and methods relate to initiating beam transport for an accelerator system. An example method includes increasing a bias voltage of one or more electrodes of the accelerator system to a first voltage level and extracting a charged particle beam from a beam source such that the beam is transported through the accelerator system. The beam has a beam current at a first beam current level that results in a first transient voltage drop of the accelerator system within a threshold. The method further includes increasing the beam current at a rate that results in one or more subsequent transient voltage drops of the accelerator system until the accelerator system has reached nominal conditions. The one or more subsequent transient voltage drops are within the threshold. Another example method includes biasing one or more electrodes of an accelerator system to a voltage level and selectively extracting, according to a duty cycle function, a charged particle beam from a beam source such that the charged particle beam is transported through the accelerator system. The duty cycle function can be linear or non-linear and can include a frequency f. The duty cycle function can include a variable pulse duration such that the variable pulse duration increases over time with each selective extraction of the charged particle beam.

The invention discloses a device and method for measuring beam parameters of a neutral beam source, the device comprises the neutral beam source, a deflection magnetic field, an ion receiving electrode and a neutral particle receiving electrode, the deflection magnetic field is located at the downstream of the particle emitting direction of the neutral beam source, and the ion receiving electrode comprises a plurality of tungsten blocks distributed at certain intervals. Water cooling channels are arranged in all tungsten blocks, the neutral particle receiving electrode is positioned at the downstream of the ion receiving electrode and is opposite to the neutral beam source, the neutral particle receiving electrode comprises a neutral particle measuring probe, and a water cooling channel is arranged in the neutral particle measuring probe. The device can realize accurate measurement of neutral beam energy and beam intensity at the same time, and has the characteristics of time saving, high efficiency, simple structure, real-time online detection, capability of displaying instantaneous energy change caused by system state change, high resolution, long service life and the like.

An electron beam size measuring device (100) and measuring method. The electron beam size measuring device (100) comprises an electron beam source (110), an anode target (120), a driving device (140), and a detection device (130). The electron beam source (110) is used for emitting an electron beam. The anode target (120) comprises a bombardment surface (121) for receiving the electron beam, and the bombardment surface (121) comprises a first material surface (1211) and a second material surface (1212) arranged side by side. The driving device (140) is connected to the electron beam source (110) and / or the anode target (120) and is used for driving the electron beam source (110) and / or the anode target (120) to make relative movement, so that the electron beam scans the first material surface (1211) and the second material surface (1212). The detection device (130) is used for detecting a signal generated after the bombardment surface (121) is bombarded by the electron beam, and the signal is used for determining the size of the electron beam.

A metrology system is provided for use with a movement system that moves an end tool. The metrology system includes a sensor configuration, a light beam source configuration and a processing portion. The light beam source configuration directs light beams to light beam sensors to indicate a position and orientation of the light beam source configuration. In a high speed operating mode (e.g., an alternative to a standard speed operating mode), the metrology system determines a region of interest (“ROI”) for each light beam sensor of a set of light beam sensors, wherein each ROI includes a measurement spot produced by a light beam. Measurement signals are processed resulting from the ROIs, and a position and orientation of the light beam source configuration is determined. In various implementations, the ROIs are determined (e.g., including position and / or size, etc.) based at least in part on position information from the movement system.

The invention relates to an optical element, in particular a lens (1) or a mirror, preferably for a semiconductor technology system, in particular for a lighting system or for a projection lens of a projection exposure system, comprising: a substrate (2), and a coating (3) which is applied to a surface (2a) of the substrate (2). The coating (3) has at least one refractive layer (4) with a location-dependent varying thickness (d(x,y)), wherein a minimum thickness (dMin) of the refractive layer (4) is at least 5 ΔB, preferably at least 10 ΔB, particularly preferably at least 15 ΔB, and wherein a difference (dMax- dMin) between a maximum thickness (dMax) and the minimum thickness (dMin) of the refractive layer (4) is greater than ΔB, preferably greater than 2 ΔB, particularly greater than 3 ΔB, where ΔB denotes the useful wavelength of the optical element (1).The invention also relates to an optical system, preferably a semiconductor technology system, comprising: a beam source for providing useful radiation at a useful wavelength (<B), preferably in the DUV wavelength range, in particular at 468 nm, 365 nm, 248 nm, 193 nm or 157 nm, and at least one optical element (1) designed as described above.

The invention discloses a neutral beam injection one-shot experiment beam source system sparking analysis method and system, relates to the technical field of negative ion source neutral beam injection experiment analysis, and solves the problem that in the prior art, fault tree drawing methods adopted for experiment fault analysis are generally a downlink method and an uplink method, but for a large system, the fault tree drawing method is not suitable for large-scale systems. The two methods have certain limitations, so that the analysis of experimental faults is not thorough; the method comprises the following steps: constructing a fault tree of a target experiment system; analyzing the current fault event based on the fault tree to obtain an upper-layer fault type and a lower-layer fault type corresponding to the current fault event; calculating a priority coefficient of each event in the upper-layer fault type and the lower-layer fault type based on historical experimental data; and processing the current fault event based on the priority coefficient. The technical problem is solved.

The present invention relates to a treatment planning system, an automatic overlap inspection method, and a method for formulating a treatment plan. The treatment planning system includes: an image processing module, for establishing an irradiated body model on the basis of medical image data, the irradiated body model including voxel grids; a data processing module, for acquiring a beam source model and determining position parameters of the beam source model and the irradiated body model; an overlap detecting module, for selecting a reference object from the several voxel grids, determining whether the reference object overlaps with the beam source model according to a position relationship between the reference object and the beam source model, and adjusting the position parameters until the reference object does not overlap with the beam source model; and a treatment plan generating module, for generating a treatment plan on the basis of the adjusted position parameters.

A method for dynamic aberration correction includes generating a primary electron beam with an electron beam source. The method includes directing the primary electron beams to a sample with an electron-optical column and deflecting the primary electron beam to an objective lens of the electron-optical column using a first Wien filter to correct for coma blur in the primary electron beam. The method includes generating off-axis chromatic aberration in the primary electron beam using the objective lens. The method includes adjusting one of a strength or orientation of the Wien filter to correct the off-axis chromatic aberration in the primary electron beam generated by the objective lens. The method includes detecting one or more secondary electrons emanating from the sample.

The invention discloses an installation method of a magnetic array, and belongs to the technical field of semiconductor material processing. The mounting method of the magnetic array comprises the following steps: S1, arranging the supporting shaft in the mounting cylinder in a penetrating manner; s2, an annular containing cavity formed between the supporting shaft and the mounting barrel is filled with a set number of profiling blocks; s3, the two baffles on the supporting shaft are rotated until the in-out avoiding holes in the two baffles are aligned with the to-be-taken-out profiling block; s4, pushing the to-be-taken-out profiling block out of the annular accommodating cavity from the in-out avoiding hole of one baffle plate, and pushing the to-be-filled magnet into the annular accommodating cavity from the in-out avoiding hole of the other baffle plate at the same time; and S5, returning to the step S3 until all the profiling blocks are replaced by the magnets and the magnetic array is formed. According to the invention, when the polarities of two adjacent magnets in the magnetic array repel each other, the magnets can be smoothly assembled in the mounting cylinder, and the mounting difficulty of the magnetic array in the beam source screening device is reduced.

The invention relates to the application field of a negative neutral beam ion source system in a magnetic confinement nuclear fusion Tokamak device, in particular to a supporting and adjusting structure and method for a beam source of a negative neutral beam system in a fusion device. According to the technical scheme, the device comprises a beam source device and a stainless steel flat plate base located below the beam source device, and further comprises a welding corrugated pipe which is fixedly installed at one end of the beam source device and used for connecting the beam source device with a bunching vacuum chamber. The beam source three-dimensional space adjusting function is achieved through the characteristic that the welding corrugated pipe is small in rigidity, the position of the beam source can be accurately adjusted through the three-dimensional jacking jack, and therefore the position of a beam spot of a beam can be accurately adjusted, the anion beam spot can be kept at the center of a target, and the problem that the beam spot of an ion beam in a negative neutral beam system in a fusion device is difficult to adjust is solved. And an acting point is provided for the three-dimensional jacking jack through the arc-shaped supporting piece, stress concentration is reduced, point discharge is prevented, and safety in the high-voltage environment is guaranteed.

A method of processing a substrate includes providing a substrate with a line pattern including lines extending in a longitudinal direction and exposing the line pattern to a directional beam. The directional beam has an azimuthal component substantially parallel to the longitudinal direction. Exposing the line pattern to the directional beam may concurrently deposit material on sidewall surfaces of the line pattern and etch surfaces of the line pattern with a normal component parallel to the longitudinal direction. The line pattern may have localized defects. The deposited material may mitigate pinch defects in the line pattern. The etched surfaces may mitigate bridge defects in the line pattern. A controller may be configured to cause the substrate to be processed according to the method. The controller may be included in a system further including a beam source and a substrate positioner.

An additive manufacturing system may include an additive manufacturing machine and a control system. The additive manufacturing machine may include one or more irradiation devices respectively including a beam source configured to emit an energy beam, an optical assembly that has one or more optical elements configured to focus the energy beam emitted by the beam source, a beam source sensor configured to determine a beam source sensor value from a source measurement beam representative of the energy beam prior to the energy beam passing through one or more optical elements of the optical assembly, and an optics sensor configured to determine an optics sensor value from an optics measurement beam representative of the energy beam downstream from the one or more optical elements of the optical assembly. The control system may include an irradiation control module configured to provide one or more control commands to the additive manufacturing machine based at least in part on the beam source sensor value and / or based at least in part on the optics sensor value.

A particle beam system is disclosed, comprising a fixture for holding an object under investigation, a particle beam source, a lens for focusing the particle beam, a detector, and a cooling system for cooling the fixture. The cooling system includes a coolant passage in the fixture, a supply port, an outlet, a two-position changeover valve, a first connecting line linked to the coolant passage and the changeover valve, a second connecting line linked to the coolant passage and the changeover valve, and a cooler for cooling a portion of the first connecting line. In its first position, the changeover valve connects the supply port to the first connecting line and the outlet to the second connecting line; in its second position, it connects the supply port to the second connecting line and the outlet to the first connecting line.

The invention provides a cyclotron electrostatic deflection plate beam loss heat source reconstruction method, and relates to the technical field of particle accelerator thermal analysis and multi-physics field coupling calculation, and the method comprises the steps: 1, configuring beam dynamics simulation parameters, multi-particle tracking is carried out under a three-dimensional field graph containing a central area electromagnetic field, a harmonic coil magnetic field and an electrostatic deflection electric field, and a particle loss list is generated; step 2, transferring the particle loss list into a beam source file of a Monte Carlo radiation transport program, configuring Monte Carlo parameters including a deflection plate material, a boundary, a particle type and an energy spectrum, executing particle transport simulation, and obtaining a three-dimensional energy deposition matrix on an electrostatic deflection plate element; according to the method, high-resolution heat source reconstruction is realized, the peak temperature rise calculation error of the deflection plate can be reduced, a temperature field solving result can be fed back to optimize the particle source, and a reliable basis is provided for thermal structure design and cooling optimization of the electrostatic deflection plate.

Augmented and / or virtual reality (AR / VR), near-eye display devices that implement eye tracking via dense point cloud scanning are disclosed. In examples, an eye tracking system for an augmented reality / virtual reality (AR / VR) display device comprises a light beam emission and sensor element located in a first location of the display device to emit a light beam. The eye tracking system may comprises a redirection element located in a second location of the display device to redirect the light beam to illuminate one of line-of-sight and a field-of-view (FOV) of the display device.

In some embodiments, a system for providing a therapeutic treatment to a patient's eye includes a treatment beam source configured to transmit a treatment beam along a treatment beam path. The system further includes a processor coupled to the treatment beam source, the processor being configured to direct the treatment beam onto retinal tissue of the patient's eye and deliver a series of short duration pulses from the treatment beam onto the retinal tissue at a first treatment spot to treat the retinal tissue. In some embodiments, a pre-treatment evaluation method using electroretinography (ERG) data may be used to predict effects of treatment beams at different power values and to determine optimal power values.

The invention discloses a density distribution device capable of stably generating special plasmas and an adjusting method, and can efficiently and stably provide a special gas channel of which the front part gas slowly rises and the rear edge outlet is provided with a steep density gradient falling edge. The invention relates to a gas medium channel with special plasma density structure distribution, which is used for a high-brightness laser plasma wake wave field acceleration to generate an ultrafast electron beam source and an application field of the ultrafast electron beam source. The device effectively overcomes the defects of uncontrollability, insufficient precision, short service life, complicated operation and the like in the process of producing gas channels by traditional capillary tubes, open gas pools and the like and preparing special structure density distribution such as steep falling edges, and has the advantages of simplicity in operation, convenience, high efficiency, high-precision adjustment, stable and controllable gas density distribution, electromagnetic interference resistance, durability and the like; and wide application of a high-brightness ultrafast electron beam source generated by a repetition-frequency laser tail wave field in frontier research fields such as ultrafast electron diffraction and ultrafast diagnosis is further promoted.

Discussed is an apparatus for manufacturing a secondary battery. The apparatus can include a masking jig which is configured to secure electrode leads and bus bars and includes a plurality of inner walls defining an opening exposing the electrode leads and the bus bars; a first beam source configured to generate a welding beam; a second beam source configured to generate an inspection beam; a scanner head configured to direct the welding beam and the inspection beam to the electrode leads and the bus bars; a detector; a processor; and a controller.

The present invention provides an electron beam direct writing device, comprising a control module and at least one electron beam source output module. The control module is used for generating i types of control signals; i is an integer greater than or equal to 2; any one of the electron beam source output module is enabled when receiving the i types of control signals at the same time, and then emits a corresponding electron beam; each electron beam source output module comprises a receiving unit, a beam current intensity regulation and control unit and an output unit; the beam current intensity regulation and control unit is used for providing an intensity regulation and control signal; when i control ends of each receiving unit receive the i types of control signals at the same time, the receiving unit generates an enable signal; each output unit emits a corresponding electron beam on the basis of a received enable signal and the intensity regulation and control signal and regulates and controls the beam current intensity of the electron beam by means of the intensity regulation and control signal. The present invention effectively solves the problems of inconsistent direct writing times, inconsistent uniformity, and the like caused by inconsistent beam current intensities of electron beam sources in an electron beam source array.

A method of processing a substrate includes providing a substrate with a line pattern including lines extending in a longitudinal direction and exposing the line pattern to a directional beam. The directional beam has an azimuthal component substantially parallel to the longitudinal direction. Exposing the line pattern to the directional beam may concurrently deposit material on sidewall surfaces of the line pattern and etch surfaces of the line pattern with a normal component parallel to the longitudinal direction. The line pattern may have localized defects. The deposited material may mitigate pinch defects in the line pattern. The etched surfaces may mitigate bridge defects in the line pattern. A controller may be configured to cause the substrate to be processed according to the method. The controller may be included in a system further including a beam source and a substrate positioner.

A system for determining information associated with synthesizing a solid mixture can include a processor and a memory. The memory can store a solid mixture sample assessment module, an electromagnetic beam source control module, and a radiation-impinged sample assessment module. The solid mixture sample assessment module can determine a set of positions on interfaces between grains in an initial sample of the solid mixture. The set can have maximal diversity of classifications of the interfaces in the initial sample. The electromagnetic beam source control module can cause electromagnetic beams to impinge the positions to produce an impinged sample. A characteristic of a first electromagnetic beam, which impinges a first position, can be different from the characteristic of a second electromagnetic beam, which impinges a second position. The radiation-impinged sample assessment module can analyze the positions on the impinged sample to determine the information associated with synthesizing the solid mixture.

The invention relates to a device and a method for manufacturing an optical fiber bundle (2), the device comprising a clamp device (3) for accommodating and holding a plurality of optical fibers (20), a pressing device (4) for providing a force to the clamp device (3), a pressing accommodation (40) arranged on the pressing device (4) for accommodating the clamp device (3) and for pressing the plurality of optical fibers (20) arranged in the clamp device (3), and at least one beam source (5) with a light path (50) directed to an area in or adjacent to the clamp device (3) in order to interconnect, in particular to fuse, the plurality of optical fibers (20) accommodated in the clamp device (3).

The invention discloses a 10 MeV-level high-brightness ultrafast electron beam source based on quasi-linear laser wake field acceleration and a generation device thereof. Miniaturized repetition frequency ten-megawatt-level femtosecond laser interacts with a gas target capable of generating special gas flow distribution; based on a new quasi-linear laser wake field electron acceleration mechanism, the generation of a 10 MeV-level high-brightness high-performance ultrafast electron beam source can be accelerated. The device effectively solves the problem that it is difficult to accelerate generation of ultrafast electron beams with low energy dispersion, low emittance, high flow intensity, femtosecond pulse width, high brightness and high performance in a sub-ten-megawatt femtosecond laser driving wake field. Therefore, the method is expected to be widely applied to advanced fields such as ultrafast electron diffraction imaging and pumping detection, laser wake field and plasma diagnosis and measurement, high-energy particle acceleration, novel ultrafast coherent radiation source generation and the like.

A mask exposure system includes a chamber, a stage configured to receive a mask, one or more mask temperature sensors, a beam source configured to irradiate an electron beam on the mask, a deflector configured to adjust a position at which the electron beam is irradiated on the mask by deflecting the electron beam based on a voltage level applied to the deflector, in the chamber, a chamber temperature sensor configured to measure an internal temperature of the chamber, and a controller configured to control a direction of deflection and a degree of deflection of the electron beam the deflector. The controller is configured to correct the voltage level applied to the deflector based on a difference between the temperature of the mask and the chamber.

To provide an electron gun device for vapor deposition that suppresses deterioration of film formation quality. [Solution] The electron gun device for vapor deposition disclosed herein comprises an apparatus main body equipped with an electron beam source and installed to the side of a crucible that is open at the top and contains an evaporation material to be vapor-deposited on a coating member, and a pair of pole pieces that guide the electron beam emitted from the apparatus main body to a target area set in the crucible, wherein the pair of pole pieces include a base end installed on the apparatus main body, a tip end disposed above the crucible and behind the target area as seen from the apparatus main body, a first connecting portion extending from the base end toward the tip end, and a second connecting portion connecting the end of the first connecting portion to the tip end and extending in a second direction that intersects with a first direction along a straight line connecting the apparatus main body and the target area, wherein the length of the second connecting portion in the first direction is longer than the length of the tip end in the first direction.

The invention relates to a structure analysis device (1) and to an associated method. The structure analysis device (1) comprises: a beam source (2) which generates an analysis beam (3) and is directed at a measurement point (4); a measurement signal detector (5) which detects portions of the analysis beam (3a) which are scattered or diffracted by a specimen at the measurement point (4) and converts said portions into an electrical measurement signal; and a reference signal detector (6) which detects reference radiation (3b) and converts said reference radiation into an electrical reference signal. The structure analysis device (1) also comprises electrical signal-splitting means (7) for dividing the electrical reference signal into a first and a second component, the first component having a static signal portion which substantially corresponds to the static signal portion of the electrical measurement signal, and means (8) for combining the first component with the electrical measurement signal to form an output signal (9) in such a way that respective static signal portions cancel each other out. The measurement signal detector (5) is mounted for movement with respect to the measurement point (4).

An apparatus for forming a three-dimensional article through successively depositing individual layers of powder material that are fused together with an electron beam from an electron beam source so as to form the article according to a computer model thereof. The apparatus includes a chamber a chamber having a first section and a second section openly connected to each other. The first section is configured to receive the individual layers of powder material. The second section comprising an electron beam source, an electromagnetic focus coil having an axially extending, and a reflector coil. The electron beam source is configured to emit an electron beam to fuse the individual layers of powder material. The reflector coil is arranged radially outside the electromagnetic focus coil. The direction of windings of the reflector coil is opposite a direction of windings of the electromagnetic focus coil.

The invention relates to a machining device (10) and a method for machining a workpiece (20), in particular a workpiece equipped with cutting edges, by means of a high-energy machining beam (30) comprising: a machining device (40), a holder (50) and a base (60), wherein the holder (50) is arranged on the base (60) and the machining device (40) is mounted on the holder (50) so as to be pivotable and / or rotatable about a pivot axis (70);the processing device (40) comprising: a processing beam source (80) for generating and / or coupling the processing beam (30) into the processing device (10), a deflection device (90) by means of which the processing beam (30) can be deflected at different angles, and a beam path (100) of the processing beam (30) which runs between the processing beam source (80) and the deflection device (90), wherein the entire beam path (100) between the processing beam source (80) and the deflection device (90) is designed such that it moves with the processing device (10) when the processing device (10) is pivoted and / or rotated, and the distance and orientation of the entire beam path (100) between the processing beam source (80) and the deflection device (90) with respect to the pivot axis (70) remains constant.

A scanning electron microscope (SEM) device includes: an electron beam source configured to emit an electron beam; a lens unit disposed between the electron beam source and a stage configured to seat an object including structures having a pattern is seated, and including a scanning coil, the scanning coil configured to generate an electromagnetic field to provide a lens, and an astigmatism adjuster; and a control unit. The control unit is configured to change a working distance between the lens unit and the object to obtain a plurality of original images, obtain a pattern image, in which the structures appear, and a plurality of kernel images, in which a distribution of the electron beam on the object appears, from the plurality of original images, and control the astigmatism adjuster to adjust the focus and the astigmatism of the lens unit using feature values extracted from the plurality of kernel images.

Exemplary embodiments provide a secondary battery manufacturing apparatus. The secondary battery manufacturing apparatus includes: a masking jig configured to fix an electrode lead and a bus bar and including first to fourth inner side walls defining an opening exposing the electrode lead and the bus bar; a first beam source configured to generate a welding beam; a second beam source configured to generate an inspection beam; a scanning head configured to guide the welding beam and the inspection beam to the electrode lead and the bus bar; a detector; a processor; and a controller.