173 results about "Beam source" patented technology

An electron beam size measuring device (100) and measuring method. The electron beam size measuring device (100) comprises an electron beam source (110), an anode target (120), a driving device (140), and a detection device (130). The electron beam source (110) is used for emitting an electron beam. The anode target (120) comprises a bombardment surface (121) for receiving the electron beam, and the bombardment surface (121) comprises a first material surface (1211) and a second material surface (1212) arranged side by side. The driving device (140) is connected to the electron beam source (110) and / or the anode target (120) and is used for driving the electron beam source (110) and / or the anode target (120) to make relative movement, so that the electron beam scans the first material surface (1211) and the second material surface (1212). The detection device (130) is used for detecting a signal generated after the bombardment surface (121) is bombarded by the electron beam, and the signal is used for determining the size of the electron beam.

The invention relates to an optical element, in particular a lens (1) or a mirror, preferably for a semiconductor technology system, in particular for a lighting system or for a projection lens of a projection exposure system, comprising: a substrate (2), and a coating (3) which is applied to a surface (2a) of the substrate (2). The coating (3) has at least one refractive layer (4) with a location-dependent varying thickness (d(x,y)), wherein a minimum thickness (dMin) of the refractive layer (4) is at least 5 ΔB, preferably at least 10 ΔB, particularly preferably at least 15 ΔB, and wherein a difference (dMax- dMin) between a maximum thickness (dMax) and the minimum thickness (dMin) of the refractive layer (4) is greater than ΔB, preferably greater than 2 ΔB, particularly greater than 3 ΔB, where ΔB denotes the useful wavelength of the optical element (1).The invention also relates to an optical system, preferably a semiconductor technology system, comprising: a beam source for providing useful radiation at a useful wavelength (<B), preferably in the DUV wavelength range, in particular at 468 nm, 365 nm, 248 nm, 193 nm or 157 nm, and at least one optical element (1) designed as described above.

A method of processing a substrate includes providing a substrate with a line pattern including lines extending in a longitudinal direction and exposing the line pattern to a directional beam. The directional beam has an azimuthal component substantially parallel to the longitudinal direction. Exposing the line pattern to the directional beam may concurrently deposit material on sidewall surfaces of the line pattern and etch surfaces of the line pattern with a normal component parallel to the longitudinal direction. The line pattern may have localized defects. The deposited material may mitigate pinch defects in the line pattern. The etched surfaces may mitigate bridge defects in the line pattern. A controller may be configured to cause the substrate to be processed according to the method. The controller may be included in a system further including a beam source and a substrate positioner.

The invention provides a cyclotron electrostatic deflection plate beam loss heat source reconstruction method, and relates to the technical field of particle accelerator thermal analysis and multi-physics field coupling calculation, and the method comprises the steps: 1, configuring beam dynamics simulation parameters, multi-particle tracking is carried out under a three-dimensional field graph containing a central area electromagnetic field, a harmonic coil magnetic field and an electrostatic deflection electric field, and a particle loss list is generated; step 2, transferring the particle loss list into a beam source file of a Monte Carlo radiation transport program, configuring Monte Carlo parameters including a deflection plate material, a boundary, a particle type and an energy spectrum, executing particle transport simulation, and obtaining a three-dimensional energy deposition matrix on an electrostatic deflection plate element; according to the method, high-resolution heat source reconstruction is realized, the peak temperature rise calculation error of the deflection plate can be reduced, a temperature field solving result can be fed back to optimize the particle source, and a reliable basis is provided for thermal structure design and cooling optimization of the electrostatic deflection plate.

The invention discloses a density distribution device capable of stably generating special plasmas and an adjusting method, and can efficiently and stably provide a special gas channel of which the front part gas slowly rises and the rear edge outlet is provided with a steep density gradient falling edge. The invention relates to a gas medium channel with special plasma density structure distribution, which is used for a high-brightness laser plasma wake wave field acceleration to generate an ultrafast electron beam source and an application field of the ultrafast electron beam source. The device effectively overcomes the defects of uncontrollability, insufficient precision, short service life, complicated operation and the like in the process of producing gas channels by traditional capillary tubes, open gas pools and the like and preparing special structure density distribution such as steep falling edges, and has the advantages of simplicity in operation, convenience, high efficiency, high-precision adjustment, stable and controllable gas density distribution, electromagnetic interference resistance, durability and the like; and wide application of a high-brightness ultrafast electron beam source generated by a repetition-frequency laser tail wave field in frontier research fields such as ultrafast electron diffraction and ultrafast diagnosis is further promoted.

A method of processing a substrate includes providing a substrate with a line pattern including lines extending in a longitudinal direction and exposing the line pattern to a directional beam. The directional beam has an azimuthal component substantially parallel to the longitudinal direction. Exposing the line pattern to the directional beam may concurrently deposit material on sidewall surfaces of the line pattern and etch surfaces of the line pattern with a normal component parallel to the longitudinal direction. The line pattern may have localized defects. The deposited material may mitigate pinch defects in the line pattern. The etched surfaces may mitigate bridge defects in the line pattern. A controller may be configured to cause the substrate to be processed according to the method. The controller may be included in a system further including a beam source and a substrate positioner.

A system for determining information associated with synthesizing a solid mixture can include a processor and a memory. The memory can store a solid mixture sample assessment module, an electromagnetic beam source control module, and a radiation-impinged sample assessment module. The solid mixture sample assessment module can determine a set of positions on interfaces between grains in an initial sample of the solid mixture. The set can have maximal diversity of classifications of the interfaces in the initial sample. The electromagnetic beam source control module can cause electromagnetic beams to impinge the positions to produce an impinged sample. A characteristic of a first electromagnetic beam, which impinges a first position, can be different from the characteristic of a second electromagnetic beam, which impinges a second position. The radiation-impinged sample assessment module can analyze the positions on the impinged sample to determine the information associated with synthesizing the solid mixture.

The invention relates to a device and a method for manufacturing an optical fiber bundle (2), the device comprising a clamp device (3) for accommodating and holding a plurality of optical fibers (20), a pressing device (4) for providing a force to the clamp device (3), a pressing accommodation (40) arranged on the pressing device (4) for accommodating the clamp device (3) and for pressing the plurality of optical fibers (20) arranged in the clamp device (3), and at least one beam source (5) with a light path (50) directed to an area in or adjacent to the clamp device (3) in order to interconnect, in particular to fuse, the plurality of optical fibers (20) accommodated in the clamp device (3).

The invention discloses a 10 MeV-level high-brightness ultrafast electron beam source based on quasi-linear laser wake field acceleration and a generation device thereof. Miniaturized repetition frequency ten-megawatt-level femtosecond laser interacts with a gas target capable of generating special gas flow distribution; based on a new quasi-linear laser wake field electron acceleration mechanism, the generation of a 10 MeV-level high-brightness high-performance ultrafast electron beam source can be accelerated. The device effectively solves the problem that it is difficult to accelerate generation of ultrafast electron beams with low energy dispersion, low emittance, high flow intensity, femtosecond pulse width, high brightness and high performance in a sub-ten-megawatt femtosecond laser driving wake field. Therefore, the method is expected to be widely applied to advanced fields such as ultrafast electron diffraction imaging and pumping detection, laser wake field and plasma diagnosis and measurement, high-energy particle acceleration, novel ultrafast coherent radiation source generation and the like.

A mask exposure system includes a chamber, a stage configured to receive a mask, one or more mask temperature sensors, a beam source configured to irradiate an electron beam on the mask, a deflector configured to adjust a position at which the electron beam is irradiated on the mask by deflecting the electron beam based on a voltage level applied to the deflector, in the chamber, a chamber temperature sensor configured to measure an internal temperature of the chamber, and a controller configured to control a direction of deflection and a degree of deflection of the electron beam the deflector. The controller is configured to correct the voltage level applied to the deflector based on a difference between the temperature of the mask and the chamber.

To provide an electron gun device for vapor deposition that suppresses deterioration of film formation quality. [Solution] The electron gun device for vapor deposition disclosed herein comprises an apparatus main body equipped with an electron beam source and installed to the side of a crucible that is open at the top and contains an evaporation material to be vapor-deposited on a coating member, and a pair of pole pieces that guide the electron beam emitted from the apparatus main body to a target area set in the crucible, wherein the pair of pole pieces include a base end installed on the apparatus main body, a tip end disposed above the crucible and behind the target area as seen from the apparatus main body, a first connecting portion extending from the base end toward the tip end, and a second connecting portion connecting the end of the first connecting portion to the tip end and extending in a second direction that intersects with a first direction along a straight line connecting the apparatus main body and the target area, wherein the length of the second connecting portion in the first direction is longer than the length of the tip end in the first direction.

The invention relates to a structure analysis device (1) and to an associated method. The structure analysis device (1) comprises: a beam source (2) which generates an analysis beam (3) and is directed at a measurement point (4); a measurement signal detector (5) which detects portions of the analysis beam (3a) which are scattered or diffracted by a specimen at the measurement point (4) and converts said portions into an electrical measurement signal; and a reference signal detector (6) which detects reference radiation (3b) and converts said reference radiation into an electrical reference signal. The structure analysis device (1) also comprises electrical signal-splitting means (7) for dividing the electrical reference signal into a first and a second component, the first component having a static signal portion which substantially corresponds to the static signal portion of the electrical measurement signal, and means (8) for combining the first component with the electrical measurement signal to form an output signal (9) in such a way that respective static signal portions cancel each other out. The measurement signal detector (5) is mounted for movement with respect to the measurement point (4).

The invention relates to a machining device (10) and a method for machining a workpiece (20), in particular a workpiece equipped with cutting edges, by means of a high-energy machining beam (30) comprising: a machining device (40), a holder (50) and a base (60), wherein the holder (50) is arranged on the base (60) and the machining device (40) is mounted on the holder (50) so as to be pivotable and / or rotatable about a pivot axis (70);the processing device (40) comprising: a processing beam source (80) for generating and / or coupling the processing beam (30) into the processing device (10), a deflection device (90) by means of which the processing beam (30) can be deflected at different angles, and a beam path (100) of the processing beam (30) which runs between the processing beam source (80) and the deflection device (90), wherein the entire beam path (100) between the processing beam source (80) and the deflection device (90) is designed such that it moves with the processing device (10) when the processing device (10) is pivoted and / or rotated, and the distance and orientation of the entire beam path (100) between the processing beam source (80) and the deflection device (90) with respect to the pivot axis (70) remains constant.

Exemplary embodiments provide a secondary battery manufacturing apparatus. The secondary battery manufacturing apparatus includes: a masking jig configured to fix an electrode lead and a bus bar and including first to fourth inner side walls defining an opening exposing the electrode lead and the bus bar; a first beam source configured to generate a welding beam; a second beam source configured to generate an inspection beam; a scanning head configured to guide the welding beam and the inspection beam to the electrode lead and the bus bar; a detector; a processor; and a controller.

The utility model relates to a kind of detector components, including detector, diaphragm and adjusting mechanism.Detector is used to detect signal electron beam, diaphragm is located in the side of detector receiving signal electron beam, the center is provided with through-hole, adjusting mechanism can adjust the area of through-hole and / or the distance between diaphragm and detector.In addition, the utility model also discloses an electron-optical system, including electron beam source, beam separator and detector component.Electron beam source emits main electron beam to sample along main optical axis, and generates signal electron beam on sample surface;Beam separator is coaxially arranged with main optical axis, located between electron beam source and sample, for deflecting signal electron beam.Through adjusting the area of diaphragm through-hole and the distance between diaphragm and detector, the signal electron beam detection of different diffusion angle can be realized, meet the accurate detection demand of different aspect ratio characteristics, applicable to the characterization of complex topography sample.

The invention relates to a beam-generating assembly (38) for a device for producing a component layer from at least one powder layer. The beam-generating assembly (38) comprises a beam source unit (42) for generating an electron beam (40). Additionally, the beam-generating assembly (38) comprises a first focusing unit (50) and a second focusing unit (56). A focusing lens (58) of the second focusing unit (56) is arranged downstream of the first focusing unit (50) along a beam direction (R). In addition, the beam-generating assembly (38) comprises an aperture unit (64) having an aperture (66), which is arranged downstream of the first focusing unit (50) along the beam direction (R). The beam-generating assembly (38) also comprises a deflection unit (62) for moving and / or positioning the electron beam (40) on the component layer. The invention additionally relates to the use of an aperture unit (64) having an aperture (66) in a beam-generating assembly (38) for a device for producing a component layer.

The invention relates to an optical element, in particular a lens (1) or a mirror, preferably for a semiconductor technology installation, in particular for an illumination system or for a projection lens of a projection exposure installation, comprising: a substrate (2) and a coating (3) which is applied to a surface (2a) of the substrate (2). The coating (3) has at least one refractive layer (4) with a thickness (d(x,y)) that varies depending on location, wherein a minimum thickness (dMin) of the refractive layer (4) is at least 5 λB, preferably at least 10 λB, particularly preferably at least 15 λB, and wherein a difference (dMax – dMin) between a maximum thickness (dMax) and the minimum thickness (dMin) of the refractive layer (4) is greater than λB, preferably greater than 2 λB, in particular greater than 3 λB, wherein λB denotes the useful wavelength of the optical element (1). The invention also relates to an optical system, preferably a semiconductor technology installation, comprising: a beam source for providing useful radiation at a useful wavelength (λB), preferably in the DUV wavelength range, in particular at 468 nm, 365 nm, 248 nm, 193 nm or 157 nm, and at least one optical element (1), which is designed as described above.

The present invention provides a vehicle lighting device wherein the lens arrangement includes an enhanced high-beam functional zone and at least two glare-free high-beam zones. By designing different projection angles for different zones of the lens arrangement, the light projected by several zones can partially overlap, and the combined light spot is therefore relatively uniform. In addition, the two adjacent glare-free high-beam sources are interconnected in the adjacent glare-free high-beam source groups, thereby shortening the wiring on the circuit board arrangement and allowing both light sources to be controlled simultaneously. By adding the low-beam auxiliary lighting function in each zone of the lens arrangement, i.e.,Adding the low beam auxiliary lighting light source groups to the circuit board assembly and adding the low beam auxiliary lighting reflector surface groups to the reflector shell assembly solves the problem of dark areas appearing in the lighting pattern when the vehicle's low beam function is activated but the high beam function is not. This effectively resolves not only the problem of insufficient central light intensity in the vehicle's high beam mode but also optimizes the lighting uniformity in low beam mode, thus improving the overall lighting performance of the vehicle's lighting.

An additive manufacturing system may include an additive manufacturing machine and a control system. The additive manufacturing machine may include one or more irradiation devices respectively including a beam source configured to emit an energy beam, an optical assembly that has one or more optical elements configured to focus the energy beam emitted by the beam source, a beam source sensor configured to determine a beam source sensor value from a source measurement beam representative of the energy beam prior to the energy beam passing through one or more optical elements of the optical assembly, and an optics sensor configured to determine an optics sensor value from an optics measurement beam representative of the energy beam downstream from the one or more optical elements of the optical assembly.

The invention belongs to the technical field of MBE molecular beam epitaxy equipment, and particularly relates to a position adjusting mechanism for a vacuum inner crucible of a high-temperature beam source furnace. One end of a shell is hermetically connected with a source furnace cavity through a flange, and a driving screw rod is rotatably mounted in the other end of the shell; one end of the driving screw is connected with the coupler, the other end of the driving screw is in threaded connection with one end of the connecting rod in the shell, the other end of the connecting rod penetrates out of the shell and the flange and then is connected with one end of the control fork, and the other end of the control fork is located in the source furnace cavity and abuts against the source furnace crucible; a corrugated pipe is arranged in the shell, one end of the corrugated pipe is fixedly connected to the flange, the other end of the corrugated pipe is connected with a connecting rod, the connecting rod is fixedly connected with one end of a pointer screw, and the other end of the pointer screw extends out of the shell. The position of the crucible is adjusted outside vacuum, smooth operation of a valve control mechanism is guaranteed, the source furnace can be prevented from being disassembled and adjusted on site by a client, and the accurate requirement for controlling the concentricity of a driving structure in the using process of the source furnace can be effectively met.

A method for operating a manufacturing device for additive manufacturing of a three-dimensional object includes irradiating a subregion of a build material within a building zone in which a beam of a beam source is directed onto the build material by a scanning unit. An amount of energy introduced is chosen such that the build material is solidified, so that a subregion of the three-dimensional object to be manufactured is formed. The method further includes controlling at least one irradiation parameter that characterizes the irradiation such that the irradiation parameter lies in a process window that changes location-dependently over an area of the building zone. The process window presets a relationship between a sensor signal detected by a sensor unit and permissible values for the irradiation parameter.

The utility model discloses an electron beam radiotherapy beam needle comprising a transmission body, a first channel used for transmitting electron beams is arranged in the transmission body, one end portion of the first channel is an incident end portion, and the other end portion of the first channel is an emergent end portion; and the scatterer is arranged at the emergent end part of the first channel so as to block the electron beam, and the scatterer scatters the electron beam towards the direction of the region where the scatterer is located. The electron beam radiotherapy beam needle can concentrate electron beam energy near the area where the scatterer is located. The utility model discloses a radiotherapy device, which comprises the electron beam radiotherapy beam needle and a beam source, the beam source is used for providing electron beams, and the beam source is arranged at the incident end part of a transmission body. The radiation therapy device adopts the electron beam radiation therapy beam needle, and the radiation therapy device can realize radiation therapy with relatively concentrated electron beam energy.

The present description concerns an electron beam device (100) comprising:a treatment chamber (130) having a longitudinal direction (Z);at least one electron beam source (110), each source being adapted to emitting an electron beam in a beam plane (PF) substantially transverse to the longitudinal direction so as to induce a plasma or an evaporation point in the treatment chamber for the treatment of a surface of a part (106);at least one first port (122) for the passage of the electron beam into said treatment chamber, the diameter of the minimum circle in which said first port is inscribed being smaller than or equal to one eighth, for example smaller than or equal to one tenth, of the smallest dimension (D3) of a transverse cross-section of the treatment chamber taken in the beam plane.

A neutron beam source generation system, a neutron beam source stabilization control system, and a neutron beam source generation method are provided. The neutron beam source generation system includes an accelerator, a target, and a calibration module. The accelerator is configured to generate a proton beam. A neutron beam source is generated by irradiating the target with the proton beam. The calibration module includes a pair of electromagnet components, a profile-measuring component, a current-measuring component, and a Faraday cup component. The calibration module uses the pair of electromagnet components to control the distribution of the proton beam according to the profile distribution of the proton beam as measured by the profile-measuring component. The calibration module adjusts the current of the proton beam according to the first current value as measured by the current-measuring component, the second current value as measured by the Faraday cup component, or both.

An atmospheric distortion compensator for a free space optical beam comprising: a disc that is rotationally balanced about a center point and that comprises a phase-modifying structure; an optical beam source configured to generate a free space optical beam that propagates through the disc and then through turbulence in open air to a point in space where reducing scintillation is desired, wherein the point in space is separated from the disc only by the open air; and a rotator mechanically coupled to the disc's center point and configured to spin the disc about an axis parallel to the free space optical beam, wherein the disc, when spinning, is configured to control a property of the free space optical beam thereby reducing scintillation effects as experienced at the point in space, which effects are caused by propagation of the free space optical beam through the open air.

The utility model belongs to the technical field of vacuum coating, and particularly provides a 500cc high-capacity high-temperature beam source structure, which comprises a crucible, a plurality of groups of insulating sheets arranged around the crucible are arranged outside the crucible, and a heating wire I and a heating wire II which are arranged up and down in the vertical direction are arranged among the plurality of groups of insulating sheets; corresponding detection ends of the thermocouple I and the thermocouple II are respectively arranged outside the heating wire I and the heating wire II; the first electrode and the second electrode are arranged on the sealing flange, and the first electrode and the second electrode are electrically connected with the first heating wire and the second heating wire respectively; according to the feedback of the two groups of thermocouples, the power of the power supplies of the upper and lower heating wires is adjusted in real time, the upper and lower temperatures are ensured to be consistent, and the influence of inaccurate monitored temperature on the film forming rate, uniformity and later cleaning is avoided.

The present invention relates to a treatment planning system, an automatic overlap inspection method, and a treatment plan formulation method. The treatment planning system includes an image processing module, a data processing module, an overlap detection module, and a treatment plan generation module. The image processing module creates an irradiated body model including several voxel grids based on medical image data. The data processing module acquires a beam source model and determines the position parameters of the beam source model and the irradiated body model. The overlap detection module selects a reference object from several voxel grids, determines whether the reference object overlaps with the beam source model based on the positional relationship between the reference object and the beam source model, and adjusts the position parameters until the reference object no longer overlaps with the beam source model. The treatment plan generation module generates a treatment plan based on the adjusted position parameters. The present invention not only automatically determines whether a collimator overlaps with patient tissue and can inspect whether a collision between the collimator and patient tissue will occur during setup according to the treatment policy, but can also modify the radiotherapy plan more quickly and automatically generate a corresponding treatment plan.

Laser device (1) for processing dental hard material, comprising a first ultrashort pulsed laser beam source (2) for providing a processing laser beam (20) configured to apply the processing laser beam (20) to a predetermined processing area of ​​dental hard material, a second laser beam source (3) for providing a pilot laser beam (30) configured to induce fluorescence of pathogenic bacteria which marks the processing area, and an application device (4) for applying an absorber material (6) to a processing area of ​​dental hard material, wherein the first laser beam source (2) is configured such that the absorption of the processing laser beam (20) raises the absorber material (6) to a higher energy state.

An electron beam microscope comprises an electron beam source 3, a magnetic objective lens 23 with poles 35, 37, a scintillator 61 with bore diameter D, a first electrode 80, a second electrode 97, and a potential supply device 11 for these elements. The bore diameter D of the scintillator is smaller than the bore diameter of the second electrode 97. Furthermore, |E(z) / r(z)| ≤ L for all points z on an axis of symmetry 29 from a region [z1, z2] near the scintillator. Here, E(z) is the field strength of the electric field at point z, r(z) is the radius of curvature of an equipotential line 91 of the electric field at point z, and L is equal to 3.0 kV / mm. 2 .

The invention relates to an EUV driver laser (10) for generating a plasma of a target material (14) emitting EUV light (12). The EUV driver laser (10) has a beam source (16), which is designed to generate an excitation light beam (18), a pump source (20), which is designed to supply the beam source (16) with pump energy, in such a way that the excitation light beam (18) is generated without scattering by converting the pump energy, a beam splitter arrangement (22), which is designed to split the excitation light beam (18) into a plurality of partial beams (24.1 -24.5), and an amplifier arrangement (26) having an amplifier unit (28) which has a plurality of optical amplifiers (30.1-30.5) which are each configured to amplify at least one of the partial beams (24.1-24.5) to form an amplified partial beam (32.1-32.5). According to the invention, the EUV driver laser (10) comprises a combination unit (36), which is designed to combine the amplified partial beams (32.1-32.5) to form a combined excitation light beam (34), and a focusing unit (38), which is designed to focus the combined excitation light beam (18) onto the target material (14). Furthermore, according to the invention, the excitation light beam (18) has a wavelength in a range of 1600 nm to 2300 nm.