105 results about "Electron source" patented technology

This inspection system 100 comprises: an electron source 102 which irradiates a sample 200 with an inspection beam; a detector 105 which detects secondary electrons obtained by irradiating the sample 200 with the inspection beam and outputs a detection signal; a laser device 107 which emits an action laser that changes the amount of secondary electrons; an electron gun 106 which emits an action electron beam that changes the amount of secondary electrons; and a computer system 140 which generates an image of the sample 200 on the basis of the detection signal. The computer system 140 generates an inspection image I1 related to the emission of the inspection beam, acquires the dimensions and the like related to a pattern on the sample 200 on the basis of the inspection image I1, generates an inspection image I2 related to the emission of the action laser and the inspection beam, acquires the material characteristics related to the pattern on the basis of the inspection image I2, generates an inspection image I3 related to the emission of the action electron beam and the inspection beam, and acquires the electrical characteristics related to the pattern on the basis of the inspection image I3.

The invention relates to the technical field of biological denitrification, in particular to a nitrogen-doped carbon dot-based microbial electronic control denitrification system and application thereof. The system comprises electron donor microorganisms, electron acceptor microorganisms and nitrogen-doped carbon dots, the nitrogen-doped carbon dots serve as electron mediators outside cells, an efficient extracellular electron transfer network is constructed, and interspecific electron transfer resistance is reduced; meanwhile, the nitrogen-doped carbon dots can regulate and control intracellular electron transport chains and the energy metabolism process, the improvement of the reducing power and the energy level is promoted, and the metabolism mode optimization is realized. By cooperatively regulating and controlling generation, transmission and utilization of electrons under an extreme electron donor limited oligotrophic condition, the system disclosed by the invention can realize efficient denitrification, avoid nitrite accumulation, remarkably inhibit generation of nitrous oxide (N2O), reduce dependence on an external organic carbon source and an electron source, and improve the denitrification efficiency. And a new technical approach is provided for improving the deep denitrification efficiency under the low-carbon condition.

The invention discloses a scanning electron microscope three-dimensional shape measurement method and a measurement system thereof, which are characterized in that the method adopts a directional focusing method to perform separated focusing and measurement on the top and the bottom of a target structure, and three-dimensional shape parameters of the target structure are obtained through a definition evaluation function; the system comprises a displacement sample stage system, an electron beam imaging system and an image processing algorithm, the electron beam imaging system is composed of an electron source, an electromagnetic lens, an electron detector and an imaging module, and the electron beam imaging system generates a focused electron beam and obtains a secondary electronic signal image; the image processing algorithm is integrated in an electron beam imaging module in the CD-SEM, and accurate positioning, feature recognition and precise measurement of a target structure are achieved. Compared with the prior art, the method has the advantages that directional focusing of the top or the bottom is achieved by analyzing the gradient distribution characteristics of the image profile curve, and the measurement problem of separating and quantifying key three-dimensional parameters such as the side wall angle, the bottom key size and the structure depth is effectively solved.

Provided herein is an electron particle system comprising an electron source system comprising a high voltage component housed within a high voltage component volume occupied by an insulation gas, a sample chamber, and an electron beam column. Also provided herein is a charged particle system comprising a charged source system comprising a high voltage component housed within a high voltage component volume occupied by an insulation gas, a sample chamber, and an electron beam column. Further provided herein is a method of using an insulation gas in a high voltage component of an electron particle system.

The utility model relates to the technical field of biomedical treatment, and discloses a biomedical membrane raw material drying and sterilizing integrated irradiation device which comprises a processing box, a control panel is arranged on the surface of the processing box, a sealing door is rotatably connected to the outer wall of the processing box, an electron beam emitter is arranged at the top of the processing box, and the electron beam emitter is connected with an electron source. An air exhaust heater is fixedly connected to the side wall of the processing box, a displacement assembly is arranged in the processing box, a sealing assembly is arranged on the other side of the processing box, the displacement assembly comprises a transmission belt, and the outer wall of the transmission belt is arranged in the processing box. According to the raw material storage device, the connecting block and the limiting block are driven by the transmission belt and matched with the limiting groove, so that the storage plate is conveniently stretched out and drawn back, raw materials are conveniently stored, workers do not need to stretch into the device to take and place the raw materials, and the problem that the raw materials need to stretch into the device and cannot be conveniently stored in the prior art is solved; and the convenience of placing the raw materials is improved.

The electron source is provided with: an electron emission unit containing an alloy of iridium and a rare earth element; a support part made of metal; and a joining part that joins the electron emission part and the support part. The bonding portion has a coating layer containing iridium and the metal in the support portion, and the coating layer contains iridium and the metal in the support portion.

The invention discloses an acupuncture anesthesia system which comprises a grounding device, a wire and an acupuncture needle, one end of the grounding device is used for being conductively connected with the ground, the other end of the grounding device is conductively connected with one end of the wire, and the other end of the wire is conductively connected with the acupuncture needle; negative electrons in the ground can sequentially flow through the grounding device, the wire and the acupuncture needle to enter acupuncture points and blood of a human body or an animal body. The grounding device is directly communicated with the ground, and a ground super-large capacitor is used as a stable electron source; efficient and stable electron transmission is realized through a conductive path constructed by a wire; by means of an automatic electronic conduction path formed by the grounding device, the wire and the acupuncture needle, negative electron injection and analgesia can be continuously carried out for a long time without continuous manual operation, and therefore the analgesia effect of needle anesthesia is comprehensively improved.

This invention relates to an extreme ultraviolet (EUV) light source device, comprising a seed laser generator, an electron source, an electron linear accelerator, a first modulation section, a first dispersion section, a second modulation section, a second dispersion section, and an amplifier. A first electron beam generated by the electron source is accelerated by the electron linear accelerator to form a second electron beam. The seed laser generator generates a seed laser, and both the seed laser and the second electron beam are injected into the first modulation section to induce a first energy modulation in the second electron beam, resulting in a third electron beam. The first dispersion section compresses the third electron beam to form a fourth electron beam. The second modulation section induces coherent radiation in the fourth electron beam, which is then subjected to a second energy modulation by the coherent radiation to form a fifth electron beam. The second dispersion section compresses the fifth electron beam to form a sixth electron beam. The amplifier causes the sixth electron beam to radiate and emit kilowatt-level EUV light. The EUV light source device of this invention can generate EUV light with an average power in the kilowatt range and has a compact structure.

Systems and methods of observing a sample using an electron beam apparatus are disclosed. The electron beam apparatus comprises an electron source configured to generate a primary electron beam along a primary optical axis, and a first electron detector having a first detection layer substantially parallel to the primary optical axis and configured to detect a first portion of a plurality of signal electrons generated from a probe spot on a sample. The method may comprise generating a plurality of signal electrons and detecting the signal electrons using the first electron detector substantially parallel to the primary optical axis of the primary electron beam. A method of configuring an electrostatic element or a magnetic element to detect backscattered electrons may include disposing an electron detector on an inner surface of the electrostatic or magnetic element and depositing a conducting layer on the inner surface of the electron detector.

According to one embodiment, an electron source includes a first member. The first member includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer has a first bandgap energy and is of p-type. The second semiconductor layer includes a first region. The first region has a second bandgap energy larger than the first bandgap energy, and is of n-type.

The invention discloses a hot cathode for a vacuum device and a preparation method and application of the hot cathode. The structure of the hot cathode comprises a cathode substrate and an emission active material combined on the cathode substrate; wherein the cathode substrate is of a porous structure, and the cathode substrate is made of a mixture of chromic oxide and tungsten; and the emission active material is scandium-containing barium aluminate. According to the scheme, the problem that the requirement of a current high-power vacuum electronic device for a low-working-temperature and high-emission-current-density electron source cannot be met is well solved.

A method for time-resolved pump-probe resonance spectroscopy, comprising the steps of:-exposing a sample (4) to a radio frequency pump pulse (20), where the radio frequency pump pulse (20) drives a resonance, where the resonance is electron spin resonance and / or nuclear magnetic resonance, where the sample (4) is located within a magnetic bias field (22); -detecting the sample (4) with an electron detection beam (7) from the electron source (6); detecting a detection beam characteristic of the electron detection beam (7) by means of a detector unit (8), the detection beam characteristic being dependent on a magnetic moment (25) of the sample (4), the magnetic moment (25) being dependent on the driven resonance, the detector unit (8) being configured to detect the detection beam characteristic of the electron detection beam (7) at a temporal resolution for time-resolved detection of the driven resonance; and determining a property of the resonance, in particular a state of the resonance, preferably a change in the state of the resonance, on the basis of the detected probe beam property.

An X-ray source is provided comprising a target generator configured to generate a liquid jet having an elongated cross with a major axis and a minor axis; an electron source configured to generate an electron beam arranged to interact with the liquid jet in an interaction region to generate X-ray radiation; and an X-ray transparent window arranged to transmit X-ray radiation generated in the interaction region, wherein the X-ray transparent window is located for extraction of X-ray radiation at an angle α relative to the major axis; wherein the target generator is configured to generate the liquid jet such that said jet has a thickness at the interaction region, along a propagation direction of the electron beam, that is less than an electron penetration depth of the electron beam in the liquid jet. A corresponding method for generating X-ray radiation is also provided.

The invention discloses a method for monitoring metal pollution in an ion implantation process by using PFG and a PFG metal pollution monitoring system of an ion implanter. The method comprises the following steps: providing a P-type semiconductor wafer, and carrying out ion implantation and annealing treatment on the P-type semiconductor wafer; adopting a plasma gun as an electron source to neutralize positive charges on the surface of the P-type semiconductor wafer in ion implantation treatment; and measuring the diffusion length of a carrier of the P-type semiconductor wafer, calculating the service life of the carrier according to the diffusion length, and outputting a PFG metal pollution degree result. The SPV method is adopted, and the service life of the carriers is calculated by measuring the diffusion length of the carriers in the silicon crystal, so that the PFG metal pollution degree is monitored, the PFG metal pollution condition of the ion implanter can be monitored efficiently and accurately, process parameters are adjusted in time, and the manufacturing quality of semiconductor devices is ensured.

The utility model provides an on-chip electron source, an on-chip electron gun and a vacuum electronic device, the on-chip electron source comprises a substrate, and one side of the substrate is provided with a concave part; the metal electron emission structure is formed on the side, provided with the concave part, of the substrate, the two ends of the metal electron emission structure are erected on the substrate, and the middle part of the metal electron emission structure is suspended between the concave part and the substrate; wherein one surface, which emits electrons outwards, of the metal electron emission structure is a curved surface, so that the emitted electrons are focused to form electron beams. The device provided by the utility model not only has strong heating power and electron beam convergence effect, but also can realize batch preparation.

An example protective structure for use in an impressed current cathodic protection (ICCP) system to protect a substrate from corrosion includes: a covering anode layer configured to act as an anode in the ICCP system and configured to be interconnected with an electron source configured to provide electrons to the substrate; and a protective layer configured to space the covering anode layer from the substrate; wherein the structure is permeable to an electrolyte to complete the electrochemical cell of the ICCP system.

An X-ray inspection apparatus includes a support portion that supports an object having a layered structure, an X-ray generation portion that irradiates the object with X-rays, and an X-ray detection portion that detects the X-rays that have passed through the object. The X-ray generation portion has an electron source that emits an electron beam and a target that emits X-rays in response to the incidence of the electron beam. When viewed from a direction in which the object and the target face each other, the shape of an electron beam irradiation region on the target is an elongated shape having a direction intersecting the stacking direction of the layered structure as a long side direction.

An electron microscope includes: an electron source configured to emit an electron beam with which a sample is irradiated; a detector configured to detect an electron emitted from the sample and a sample peripheral object disposed around the sample; and a control unit configured to acquire an observation image based on a detection signal output from the detector. The control unit acquires the observation image for each of directions of the electron beam by controlling the direction of the electron beam with respect to the sample, and removes an image of the sample peripheral object from the observation image using an averaged image obtained by averaging the observation images.

An electron microscope system including a sample holder, a shared camera, a correlative light electron microscope (CLEM), a focused ion beam scanning electron microscope (FIB-SEM), and a transmission electron microscope (TEM). The CLEM includes a CLEM electron source to generate a first electron beam towards a sample and cause a first scattered beam for capture by the shared camera, and a light source configured to cause at least a portion of the sample to fluoresce for capture by the shared camera. The FIB-SEM includes a SEM electron source and a plasma source, the plasma source configured to generate an ion beam to mill the sample while supported by the sample holder. The TEM includes a TEM electron source to generate an electron beam towards the sample on the sample holder and cause a scattered beam for capture by the shared camera as a diffraction pattern.

The invention relates to a combined photocolumn for overflow charging and image formation in voltage contrast wafer inspection. A scanning electron microscope system may include an optoelectronic system and a controller. The optoelectronic system may include: an electron source; and a photocolumn configured to direct the electron beam to the sample. The photocolumn may include: a dual lens assembly; a beam limiting aperture disposed between the first and second lenses of the dual lens assembly; and a detector assembly configured to detect electrons scattered from the sample. In an embodiment, the controller of the scanning electron microscope system may be configured to: cause the optoelectronic system to form an overflow electron beam and perform an overflow scan of the sample with the overflow electron beam; causing the optoelectronic system to form an imaging electron beam and performing an imaging scan of the sample using the imaging electron beam; receiving an image acquired by the detector assembly during the imaging scan; and determining a characteristic of the sample based on the image.

This invention relates to the field of biological denitrification technology, and more particularly to a microbial electron-regulated denitrification system based on nitrogen-doped carbon dots and its application. The system comprises electron-donating microorganisms, electron-accepting microorganisms, and nitrogen-doped carbon dots. The nitrogen-doped carbon dots act as extracellular electron mediators, constructing an efficient extracellular electron transport network and reducing interspecies electron transport resistance. Simultaneously, the nitrogen-doped carbon dots can regulate intracellular electron transport chains and energy metabolism processes, promoting increased reducing power and energy levels, and optimizing metabolic patterns. By synergistically regulating electron generation, transport, and utilization under oligotrophic conditions with limited electron donors, this system achieves highly efficient denitrification, avoids nitrite accumulation, and significantly inhibits nitrous oxide (N2O) generation, while reducing dependence on external organic carbon sources and electron sources. This provides a new technical approach for improving the efficiency of deep denitrification under low-carbon conditions.

An X-ray source is disclosed, comprising: an electron source configured to provide an electron beam; an aperture configured to limit the angular distribution of the electron beam; a secondary emission limiting aperture configured to limit the angular distribution of the secondary X-ray emission, wherein the electron beam causes secondary X-ray emission to be emitted from a region surrounding the aperture; a first deflector located downstream of the electron beam limiting aperture and configured to deflect the electron beam toward the secondary emission limiting aperture; a target located downstream of the secondary emission limiting aperture and configured to generate primary X-ray emission through interaction with the electron beam; and an exit window located to transmit the primary X-ray emission, wherein the secondary emission is prevented from reaching the exit window by the secondary emission limiting aperture. A corresponding method is also disclosed.

The invention belongs to the technical field of biological catalysis, and relates to a light-driven P450 catalytic system and application thereof in pravastatin synthesis. The system comprises a thylakoid membrane, Fdx, P450sca-2 and PC / Cyt C6, and is characterized in that the PC / Cyt C6 is connected with the Fdx; the thylakoid membrane takes H2O as an electron donor under an illumination condition, electrons are generated through a light system II, and the electrons are sequentially transferred to Fdx and are conveyed to P450sca-2 through interaction between proteins to catalyze an enzymatic reaction. According to the invention, light energy and / or water are / is used as an energy source and an electron source, expensive NAD (P) H is completely or partially replaced, and the production cost is greatly reduced. The system lays a certain foundation for constructing a P450 reaction system for photosynthesis and CO2 fixation in the future.

A method for manufacturing an electron source according to the present disclosure includes steps of: (A) preparing a first member provided with a columnar portion made of a first material having an electron emission characteristic, (B) preparing a second member which has a higher work function and a lower strength than the first material, and in which a hole is formed extending in a direction from one end surface toward the other end surface, and (C) pushing the columnar portion into the hole in the second member, wherein the first member has a cross-sectional shape that is dissimilar to the cross-sectional shape of the hole; and in the step (C), by pressing the columnar portion into the hole, a portion of a side surface of the columnar portion scrapes the inner surface of the hole and bites into the second member, thereby fixing the columnar portion to the second member.

The application provides an electron source and a preparation method and application thereof. The electron source comprises an optical fiber, a conductive connecting layer and an electron emission layer. The conductive connecting layer is arranged on the outer surface of the optical fiber. The electron emission layer comprises an electron excitation layer electrically connected with the conductive connecting layer. The electron excitation layer comprises at least one layer of two-dimensional material. The electron excitation layer is arranged on the laser emission path of the optical fiber, and the laser emitted by the optical fiber can directly irradiate on the electron excitation layer, so that the electron excitation layer is excited by the laser and emits electrons. The two-dimensional material as the material of the electron emission layer has the characteristics of good stability and long service life. Moreover, the two-dimensional material can be directly integrated with the optical fiber. The optical fiber can provide a stable excitation source with adjustable wavelength, polarization and optical mode, and can be applied to different application scenarios.

An electron beam apparatus (100) is described, including an electron source (105) configured to generate a primary electron beam propagating along an optical axis (A), a sample stage (108) configured to support a sample, an objective lens (120) configured to focus the primary electron beam on the sample for causing an emission of a signal electron beam and a foil or grid lens (300, 400) for influencing the signal electron beam. The foil or grid lens includes an electrode (340) that surrounds the optical axis; and a first foil or grid (320) adjacent to the electrode and perpendicular to the optical axis, the first foil or grid being substantially transparent to electrons, wherein a central opening (325) configured to allow the primary electron beam to pass through the central opening is provided in the first foil or grid.

Provided herein is an electron particle system comprising an electron source system comprising a high voltage component housed within a high voltage component volume occupied by an insulating gas, a sample chamber, and an electron beam barrel. Also provided herein is a charged particle system comprising a powered system comprising a high voltage component housed within a high voltage component volume occupied by an insulating gas, a sample chamber, and an electron beam barrel. Also provided herein is a method of using an insulating gas in a high voltage assembly of an electron particle system.

Provided is an electron microscope in which a plurality of parameters can be adjusted in a short amount of time, and a method for controlling the electron microscope. The electron microscope comprises: an electron source that emits an electron beam with which a sample is irradiated; a detector that detects electrons emitted from the sample; and a control unit that acquires observation images on the basis of detection signals output from the detector and controls the operation of each part, the electron microscope characterized in that, for each observation image acquired while changing a plurality of parameters, the control unit calculates a texture feature amount by using a pixel value of a pixel of interest in the observation image and pixel values of peripheral pixels of the pixel of interest, and sets the parameters on the basis of the texture feature amount.

The electron beam emitting structure (1) includes an electron source (2) and a protective electrode (3). The electron source (2) emits an electron beam (B) toward the target (4) of the electric field emitting device. The protective electrode (3) is disposed around the electron source (2). In the electron source (2), the end face opposite to the target (4) constitutes an electron emitting surface (20). In the electron emitting surface (20), a curved concave surface (21) is formed in the central part and a curved convex surface (22) is formed in the peripheral part.

An apparatus comprising: an ion trap, for example a 2 dimensional, 2D, ion trap such as a linear quadrupole ion trap, LIT, wherein the ion trap comprises a set of electrodes, for example wherein the 2D ion trap comprises two or more pairs of rod electrodes and optionally two end electrodes; a power supply configured to: generate a substantially rectangular radio frequency, RF, voltage waveform, wherein the RF voltage waveform includes a first set of states including a first state having a first voltage level and a second state having a second voltage level, wherein the first state and the second state are mutually opposed; and apply the generated RF voltage waveform to the set of electrodes, wherein the first set of states provides a trapping field in the ion trap for trapping ions in a trapping region thereof; an electron source, configured to inject electrons into the ion trap for reactions thereof with the ions, for example electron capture dissociation, ECD, hot ECD, electron induced dissociation, EID, and / or electron detachment dissociation, EDD; wherein the RF voltage waveform includes a second set of states including a first state having a first voltage level, wherein the first voltage level of the second set of states is between the first voltage level and the second voltage level of the first set of states; and wherein the electron source is configured to inject the electrons into the ion trap during the second set of states, for example only during the second set of states.