213 results about "Electron source" patented technology

The embodiment of the invention discloses a cold cathode flat plate X-ray source capable of coding light emitting and a coding light emitting method, the ray source comprises a vacuum sealing cavity, a cathode assembly and an anode assembly, the cathode assembly and the anode assembly are arranged in the vacuum sealing cavity in a sealing manner, and the cathode assembly and the anode assembly are oppositely arranged at an interval; a vacuum working space for electron acceleration and X-ray generation is formed; the cathode assembly comprises a cathode substrate and a nano cold cathode electron source array arranged on the cathode substrate; the anode assembly comprises an anode substrate and a transmission anode target arranged on the anode substrate; wherein at least one of the nanometer cold cathode electron source array and the transmission anode target is in a coding state: when the nanometer cold cathode electron source array is in the coding state, the nanometer cold cathode electron source array comprises a micro-unit electron source array capable of independently addressing, and a preset coding pattern is formed; and when the transmission anode target is in a coding state, a metal coating with a preset coding pattern is formed on the surface of the anode substrate through a micromachining process so as to integrate a coding function.

This inspection system 100 comprises: an electron source 102 which irradiates a sample 200 with an inspection beam; a detector 105 which detects secondary electrons obtained by irradiating the sample 200 with the inspection beam and outputs a detection signal; a laser device 107 which emits an action laser that changes the amount of secondary electrons; an electron gun 106 which emits an action electron beam that changes the amount of secondary electrons; and a computer system 140 which generates an image of the sample 200 on the basis of the detection signal. The computer system 140 generates an inspection image I1 related to the emission of the inspection beam, acquires the dimensions and the like related to a pattern on the sample 200 on the basis of the inspection image I1, generates an inspection image I2 related to the emission of the action laser and the inspection beam, acquires the material characteristics related to the pattern on the basis of the inspection image I2, generates an inspection image I3 related to the emission of the action electron beam and the inspection beam, and acquires the electrical characteristics related to the pattern on the basis of the inspection image I3.

The invention relates to the technical field of biological denitrification, in particular to a nitrogen-doped carbon dot-based microbial electronic control denitrification system and application thereof. The system comprises electron donor microorganisms, electron acceptor microorganisms and nitrogen-doped carbon dots, the nitrogen-doped carbon dots serve as electron mediators outside cells, an efficient extracellular electron transfer network is constructed, and interspecific electron transfer resistance is reduced; meanwhile, the nitrogen-doped carbon dots can regulate and control intracellular electron transport chains and the energy metabolism process, the improvement of the reducing power and the energy level is promoted, and the metabolism mode optimization is realized. By cooperatively regulating and controlling generation, transmission and utilization of electrons under an extreme electron donor limited oligotrophic condition, the system disclosed by the invention can realize efficient denitrification, avoid nitrite accumulation, remarkably inhibit generation of nitrous oxide (N2O), reduce dependence on an external organic carbon source and an electron source, and improve the denitrification efficiency. And a new technical approach is provided for improving the deep denitrification efficiency under the low-carbon condition.

The invention discloses a scanning electron microscope three-dimensional shape measurement method and a measurement system thereof, which are characterized in that the method adopts a directional focusing method to perform separated focusing and measurement on the top and the bottom of a target structure, and three-dimensional shape parameters of the target structure are obtained through a definition evaluation function; the system comprises a displacement sample stage system, an electron beam imaging system and an image processing algorithm, the electron beam imaging system is composed of an electron source, an electromagnetic lens, an electron detector and an imaging module, and the electron beam imaging system generates a focused electron beam and obtains a secondary electronic signal image; the image processing algorithm is integrated in an electron beam imaging module in the CD-SEM, and accurate positioning, feature recognition and precise measurement of a target structure are achieved. Compared with the prior art, the method has the advantages that directional focusing of the top or the bottom is achieved by analyzing the gradient distribution characteristics of the image profile curve, and the measurement problem of separating and quantifying key three-dimensional parameters such as the side wall angle, the bottom key size and the structure depth is effectively solved.

Provided herein is an electron particle system comprising an electron source system comprising a high voltage component housed within a high voltage component volume occupied by an insulation gas, a sample chamber, and an electron beam column. Also provided herein is a charged particle system comprising a charged source system comprising a high voltage component housed within a high voltage component volume occupied by an insulation gas, a sample chamber, and an electron beam column. Further provided herein is a method of using an insulation gas in a high voltage component of an electron particle system.

The invention relates to an electron extraction method and system for a low-energy electron source. The method comprises the following steps: providing at least one cathode, at least one heating power supply and at least one control electrode; in a first time period, the heating power supply provides heating current for the cathode, so that the temperature of the cathode is increased to be higher than an electron emission threshold value, meanwhile, the potential difference between the control electrode and the cathode is controlled to be a suppression value, and electrons generated by the cathode are prevented from reaching a preset target spot; and in the second time period, the current is stopped from being supplied to the cathode, and meanwhile, the potential difference between the control electrode and the cathode is controlled to reach a guide value, so that electrons emitted by the cathode through waste heat reach the preset target spot and interact with target particles. Cathode heating is controlled in an intermittent energization mode, and accurate extraction of the low-energy scattered electron beam is achieved.

[Problem] To provide novel technology. [Solution] One aspect of the present invention provides a thermionic cathode. The thermionic cathode includes an electron source and a plurality of grids. The electron source is configured to emit electrons when heated. The plurality of grids have through-holes that allow electrons emitted from the electron source to pass in a predetermined direction. At least one of the grids is configured to reduce the movement speed of the electrons.

The utility model relates to the technical field of biomedical treatment, and discloses a biomedical membrane raw material drying and sterilizing integrated irradiation device which comprises a processing box, a control panel is arranged on the surface of the processing box, a sealing door is rotatably connected to the outer wall of the processing box, an electron beam emitter is arranged at the top of the processing box, and the electron beam emitter is connected with an electron source. An air exhaust heater is fixedly connected to the side wall of the processing box, a displacement assembly is arranged in the processing box, a sealing assembly is arranged on the other side of the processing box, the displacement assembly comprises a transmission belt, and the outer wall of the transmission belt is arranged in the processing box. According to the raw material storage device, the connecting block and the limiting block are driven by the transmission belt and matched with the limiting groove, so that the storage plate is conveniently stretched out and drawn back, raw materials are conveniently stored, workers do not need to stretch into the device to take and place the raw materials, and the problem that the raw materials need to stretch into the device and cannot be conveniently stored in the prior art is solved; and the convenience of placing the raw materials is improved.

The electron source is provided with: an electron emission unit containing an alloy of iridium and a rare earth element; a support part made of metal; and a joining part that joins the electron emission part and the support part. The bonding portion has a coating layer containing iridium and the metal in the support portion, and the coating layer contains iridium and the metal in the support portion.

A device includes a two dimensional array of probes for inspecting a wafer. The two dimensional array includes at least one electron beam column or a magnetic element located in each dimension of the two dimensional array. Each electron beam column includes: an electron source, and a detector in line with the electron source. The two dimensional array is arranged such that each electron beam column is located adjacent to a magnetic element to minimize optical variation resulting from one or more magnetic fields.

The utility model relates to the technical field of electron sources, and provides an electron source and an electron gun, and the electron source comprises an optical fiber assembly, an electron emitter and an installation member. Wherein the optical fiber assembly comprises an optical fiber, the electron emitter comprises an electron excitation layer, the electron excitation layer is arranged on a laser emitting path of the optical fiber, and laser emitted by the optical fiber can directly irradiate the electron excitation layer, so that the electron excitation layer is excited by the laser and emits electrons; the electron excitation layer comprises at least one of a zero-dimensional material, a one-dimensional material and a two-dimensional material. And the mounting piece is arranged between the optical fiber assembly and the electron emitter and is used for detachably connecting the optical fiber assembly and the electron emitter. The electron source is simple in structure, and the electron emitter and the optical fiber are convenient to disassemble and replace.

A disclosed electron source includes: (A) a graphene layer having an electron emission area on a surface of the graphene layer; and (B) a p-type semiconductor layer that is in direct contact with the graphene layer and forms a Schottky junction with the graphene layer. In this way, the electrons are accelerated in the depletion layer in the p-type semiconductor layer. Moreover, unlike the MIS type electron source, since the electrons are not accelerated in the insulator layer, the dielectric breakdown caused by a large number of electrons travelling in the valence band of the insulator does not occur, and a long lifespan electron source can be realized. Note that the aforementioned p-type semiconductor layer preferably has a depletion layer having a width of 2.91 nm or more and 30 nm or less.

The invention discloses an acupuncture anesthesia system which comprises a grounding device, a wire and an acupuncture needle, one end of the grounding device is used for being conductively connected with the ground, the other end of the grounding device is conductively connected with one end of the wire, and the other end of the wire is conductively connected with the acupuncture needle; negative electrons in the ground can sequentially flow through the grounding device, the wire and the acupuncture needle to enter acupuncture points and blood of a human body or an animal body. The grounding device is directly communicated with the ground, and a ground super-large capacitor is used as a stable electron source; efficient and stable electron transmission is realized through a conductive path constructed by a wire; by means of an automatic electronic conduction path formed by the grounding device, the wire and the acupuncture needle, negative electron injection and analgesia can be continuously carried out for a long time without continuous manual operation, and therefore the analgesia effect of needle anesthesia is comprehensively improved.

This invention relates to an extreme ultraviolet (EUV) light source device, comprising a seed laser generator, an electron source, an electron linear accelerator, a first modulation section, a first dispersion section, a second modulation section, a second dispersion section, and an amplifier. A first electron beam generated by the electron source is accelerated by the electron linear accelerator to form a second electron beam. The seed laser generator generates a seed laser, and both the seed laser and the second electron beam are injected into the first modulation section to induce a first energy modulation in the second electron beam, resulting in a third electron beam. The first dispersion section compresses the third electron beam to form a fourth electron beam. The second modulation section induces coherent radiation in the fourth electron beam, which is then subjected to a second energy modulation by the coherent radiation to form a fifth electron beam. The second dispersion section compresses the fifth electron beam to form a sixth electron beam. The amplifier causes the sixth electron beam to radiate and emit kilowatt-level EUV light. The EUV light source device of this invention can generate EUV light with an average power in the kilowatt range and has a compact structure.

According to some aspects, a monochromatic x-ray source is provided. The monochromatic x-ray source comprises an electron source configured to generate electrons, a primary target arranged to receive electrons from the electron source to produce broadband x-ray radiation in response to electrons impinging on the primary target, and a secondary target comprising at least one layer of material capable of producing monochromatic x-ray radiation in response to incident broadband x-ray radiation emitted by the primary target.

Systems and methods of observing a sample using an electron beam apparatus are disclosed. The electron beam apparatus comprises an electron source configured to generate a primary electron beam along a primary optical axis, and a first electron detector having a first detection layer substantially parallel to the primary optical axis and configured to detect a first portion of a plurality of signal electrons generated from a probe spot on a sample. The method may comprise generating a plurality of signal electrons and detecting the signal electrons using the first electron detector substantially parallel to the primary optical axis of the primary electron beam. A method of configuring an electrostatic element or a magnetic element to detect backscattered electrons may include disposing an electron detector on an inner surface of the electrostatic or magnetic element and depositing a conducting layer on the inner surface of the electron detector.

The present application relates to the technical field of vacuum micro-nano electron source, and more particularly to an electron source structure for increasing supply current and a preparation method thereof, which utilizes an insulating layer with uniform thickness to cover the surface of a P-type semiconductor protruding structure in series with an emitter, a control electrode on the outer surface of the covering insulating layer is at a high potential relative to the P-type semiconductor, a large-area carrier depletion layer is formed on the side surface of the protruding structure, and heat-generated electrons in the carrier depletion layer are used to supply field emission current to the emitter, so as to increase the heat-generated current supplied to the emitter per unit substrate area, increase the emission current intensity and current density, and effectively solve the problems of small supply current density, limited emission current intensity and current density in the prior art electron source based on an integrated control electrode of a P-type semiconductor substrate.

According to one embodiment, an electron source includes a first member. The first member includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer has a first bandgap energy and is of p-type. The second semiconductor layer includes a first region. The first region has a second bandgap energy larger than the first bandgap energy, and is of n-type.

In order to provide a charged particle beam device capable of returning to a usable state in a short time after completion of flushing processing for continuously and stably using an electron beam having a high luminance and a low energy dispersion and capable of shortening the downtime of the device, the charged particle beam device is configured as follows.　The charged particle beam device comprises: an electron source that emits electrons; an extraction electrode that faces the electron source and generates an electric field for causing the electron source to emit electrons; a first voltage power supply that applies a first voltage to the electron source in order to emit electrons from the electron source; a second voltage power supply that applies a second voltage to the extraction electrode; and a cooling device that cools the electron source. The charged particle beam device further comprises: a third voltage power supply that, in order to remove gas molecules adsorbed onto the electron source in the process of a specimen inspection, applies a third voltage having a polarity opposite to that of the first voltage to the electron source and thereby can set an electric field generated between the electron source and the extraction electrode such that the electron source is positive and the extraction electrode is negative; and a control unit for performing control so as to stop applying the first voltage from the first voltage power supply when applying the third voltage from the third voltage power supply to the electron source.

The invention discloses a hot cathode for a vacuum device and a preparation method and application of the hot cathode. The structure of the hot cathode comprises a cathode substrate and an emission active material combined on the cathode substrate; wherein the cathode substrate is of a porous structure, and the cathode substrate is made of a mixture of chromic oxide and tungsten; and the emission active material is scandium-containing barium aluminate. According to the scheme, the problem that the requirement of a current high-power vacuum electronic device for a low-working-temperature and high-emission-current-density electron source cannot be met is well solved.

A method for time-resolved pump-probe resonance spectroscopy, comprising the steps of:-exposing a sample (4) to a radio frequency pump pulse (20), where the radio frequency pump pulse (20) drives a resonance, where the resonance is electron spin resonance and / or nuclear magnetic resonance, where the sample (4) is located within a magnetic bias field (22); -detecting the sample (4) with an electron detection beam (7) from the electron source (6); detecting a detection beam characteristic of the electron detection beam (7) by means of a detector unit (8), the detection beam characteristic being dependent on a magnetic moment (25) of the sample (4), the magnetic moment (25) being dependent on the driven resonance, the detector unit (8) being configured to detect the detection beam characteristic of the electron detection beam (7) at a temporal resolution for time-resolved detection of the driven resonance; and determining a property of the resonance, in particular a state of the resonance, preferably a change in the state of the resonance, on the basis of the detected probe beam property.

An X-ray source is provided comprising a target generator configured to generate a liquid jet having an elongated cross with a major axis and a minor axis; an electron source configured to generate an electron beam arranged to interact with the liquid jet in an interaction region to generate X-ray radiation; and an X-ray transparent window arranged to transmit X-ray radiation generated in the interaction region, wherein the X-ray transparent window is located for extraction of X-ray radiation at an angle α relative to the major axis; wherein the target generator is configured to generate the liquid jet such that said jet has a thickness at the interaction region, along a propagation direction of the electron beam, that is less than an electron penetration depth of the electron beam in the liquid jet. A corresponding method for generating X-ray radiation is also provided.

The present invention provides an electron microscope capable of suppressing light scattering due to a hole for electron passage in a reflector. The electron microscope comprises an electron source that emits an electron beam with which to irradiate a sample, a light source that emits excitation light with which to irradiate the sample, a reflector which has a hole that the electron beam passes through and which reflects the excitation light toward the sample, a detector that detects electrons emitted from the sample irradiated with the electron beam and outputs a detection signal, and a control unit that generates an observation image of the sample on the basis of the detection signal. The electron microscope is characterized by further comprising: a condensing lens disposed between the light source and the reflector to condense the excitation light and also form a dark area covering the hole in the center of the excitation light.

Apparatus and methods are disclosed for a mechanically stable, long-life junction between hexaboride-containing and tantalum-containing components. Examples are used as a cold field emitter assembly which is compatible with ultra-high vacuum and occasional high-temperature flashing. A metal adapter is welded to a hexaboride electrode. Some embodiments use a tantalum adapter and a LaB6 microrod electrode with a nanorod emitter tip. Other material combinations are disclosed, as also usage in electron sources for electron microscopes. In variations, the adapter is deposited onto a filament and the electrode then welded to the adapter.

The invention discloses a method for monitoring metal pollution in an ion implantation process by using PFG and a PFG metal pollution monitoring system of an ion implanter. The method comprises the following steps: providing a P-type semiconductor wafer, and carrying out ion implantation and annealing treatment on the P-type semiconductor wafer; adopting a plasma gun as an electron source to neutralize positive charges on the surface of the P-type semiconductor wafer in ion implantation treatment; and measuring the diffusion length of a carrier of the P-type semiconductor wafer, calculating the service life of the carrier according to the diffusion length, and outputting a PFG metal pollution degree result. The SPV method is adopted, and the service life of the carriers is calculated by measuring the diffusion length of the carriers in the silicon crystal, so that the PFG metal pollution degree is monitored, the PFG metal pollution condition of the ion implanter can be monitored efficiently and accurately, process parameters are adjusted in time, and the manufacturing quality of semiconductor devices is ensured.

The utility model provides an on-chip electron source, an on-chip electron gun and a vacuum electronic device, the on-chip electron source comprises a substrate, and one side of the substrate is provided with a concave part; the metal electron emission structure is formed on the side, provided with the concave part, of the substrate, the two ends of the metal electron emission structure are erected on the substrate, and the middle part of the metal electron emission structure is suspended between the concave part and the substrate; wherein one surface, which emits electrons outwards, of the metal electron emission structure is a curved surface, so that the emitted electrons are focused to form electron beams. The device provided by the utility model not only has strong heating power and electron beam convergence effect, but also can realize batch preparation.

An example protective structure for use in an impressed current cathodic protection (ICCP) system to protect a substrate from corrosion includes: a covering anode layer configured to act as an anode in the ICCP system and configured to be interconnected with an electron source configured to provide electrons to the substrate; and a protective layer configured to space the covering anode layer from the substrate; wherein the structure is permeable to an electrolyte to complete the electrochemical cell of the ICCP system.

The invention relates to the technical field of ionization vacuum sensors, and discloses a miniature ionization vacuum sensor and a vacuum gauge, the sensor comprises at least one sensor unit, each sensor unit comprises a doped semiconductor substrate, one side surface of the doped semiconductor substrate is provided with at least one groove; the insulating dielectric layer is positioned on the surface of one side of the doped semiconductor substrate and in an area outside the groove; the electrode layer is located on the surface of one side, away from the semiconductor substrate, of the insulating dielectric layer; two-dimensional electron gas is distributed on the interface of the doped semiconductor substrate and the insulating dielectric layer and serves as a field emission electron source; a nanometer air channel is formed between the bottom of the groove and the target surface, and the target surface is the surface where the surface of the side, away from the insulating dielectric layer, of the electrode layer is located. By introducing the nano air channel, the interelectrode distance is reduced, so that the working voltage is reduced. In addition, the coulomb repulsive force effect between electrons in the two-dimensional electron gas can further reduce the working voltage.

An X-ray inspection apparatus includes a support portion that supports an object having a layered structure, an X-ray generation portion that irradiates the object with X-rays, and an X-ray detection portion that detects the X-rays that have passed through the object. The X-ray generation portion has an electron source that emits an electron beam and a target that emits X-rays in response to the incidence of the electron beam. When viewed from a direction in which the object and the target face each other, the shape of an electron beam irradiation region on the target is an elongated shape having a direction intersecting the stacking direction of the layered structure as a long side direction.

The invention provides a device and method for generating positive and negative polarity homogeneous and heterogeneous cluster ion beams, the device for generating positive and negative polarity homogeneous and heterogeneous cluster ion beams comprises a mixing chamber, a gas power source and an active gas introduction system, the mixing chamber is provided with a direct heating type electron source; the gas power source is used for forming a neutral cluster beam, and the gas power source is connected with the mixing chamber and used for introducing the neutral cluster beam into the mixing chamber; and the active gas introduction system is connected with the mixing chamber and is used for introducing active gas into the mixing chamber. According to the invention, a positive polarity homogeneous cluster ion beam, a positive polarity heterogeneous cluster ion beam and a negative polarity heterogeneous cluster ion beam can be formed, the device has multiple functions, and the operation efficiency of the device for forming the homogeneous and heterogeneous cluster ion beams can be improved.