499 results about "Electron source" patented technology

The invention relates to the technical field of pre-silicon verification, and discloses a verification environment generation method and device and a function verification method and system.The method comprises the steps that a target configuration file suitable for a to-be-tested chip model is read, and the target configuration file comprises field information; the field information is at least used for representing hierarchical information and a UPF file path of a target power domain module which is currently in an enabled state in the at least one power domain module; according to the target configuration file, generating environment configuration data of a to-be-tested chip model at least comprising UPF loading information and power supply information of a target power domain module; and according to the UPF loading information, loading the UPF file under the UPF file path into a target power domain module represented by the hierarchical information, and configuring a power supply for the target power domain module based on the power supply information to generate a verification environment for the to-be-tested chip model. According to the technical scheme provided by one or more embodiments, the verification environment can be automatically generated.

The present invention is directed to a fission product extraction system operable to capture and extract fission products from a flow of irradiated fueled molten salt of a molten salt reactor. The example extraction systems described herein utilize electroless deposition to chemically plate fission products onto a metallic structure. The metallic structure may be partially coated with a reducing agent, such as beryllium to provide an electron source for the fission products. The metallic structure may be a component of an extraction system designed to facilitate submersion of the metallic structure into the flow of molten salt. The extraction system may also be designed to facilitate removal of the metallic structure without requiring a shut down or slowdown of the reactor system.

An X-ray generator is presented comprising: an electron source generating an accelerated electron beam propagating along a first propagation path with a first general propagation direction; a first crystalline structure located in the first propagation path, and defining a first crystal plane oriented at a predetermined non-zero angle with the first propagation path, and configured to transmit the electron beam therethrough and generate parametric x-ray (PXR) emission being first directional emission along a second propagation path tilted with respect to the first general propagation direction; and a second crystalline structure located in the second propagation path and configured as a monochromator with respect to the PXR emission, and defining a second crystal plane oriented at the predetermined non-zero angle with respect to the second propagation path to thereby provide second directionality for the PXR emission.

An x-ray source includes an x-ray transmissive window having an x-ray transmittance greater than or equal to 20% for at least some x-rays having an x-ray energy less than 1 keV. The x-ray source further includes an electron source configured to generate at least one electron beam and an anode assembly configured to generate x-rays in response to electron bombardment by at least some of the electrons of the at least one electron beam from the electron source. The x-ray source further includes at least one x-ray optic is configured to receive at least some of the x-rays from the anode assembly and to direct at least some of the received x-rays to the window to form an x-ray beam.

Coupling qubits is provided. The method comprises embedding a tin atom in a silicon substrate and forming a number of quantum dot electrodes over the silicon substrate. The quantum dot electrodes draw an electron from an electron source into the silicon substrate and performing an electron-nuclear controlled-phase gate operation by: moving the electron adiabatically toward the tin atom to achieve a specified level of hyperfine interaction (HFI) between the electron and the nucleus of the tin atom to minimize the effect of noise; holding the electron at the distance of the specified HIFI for a specified duration of time to represent an “on” state; and moving the electron adiabatically away from the tin atom to lower the HFI below the specified level and represent an “off” state

According to the focusing imaging device and the focusing imaging system provided by the invention, 3D imaging is realized by arranging the focusing imaging lens group, and the electron beam in the uplink path is not deflected and is not required to be subjected to reverse polarization compensation, so that the drop point energy of the downlink electron beam on the surface of a sample can be adjusted in a large range, and the requirement on working parameter switching can be met. The focusing imaging device can comprise an electron source, an intermediate lens group and a focusing imaging lens group. The electron source can be used for outputting a first downlink electron beam to the middle lens group. The middle lens group can be used for controlling the drop point position of the first downlink electron beam on the sample by scanning the first downlink electron beam. And the focusing imaging lens group can be used for focusing the first downlink electron beam to the surface of the sample according to the drop point position and imaging according to the uplink electron beam generated on the surface of the sample.

The embodiment of the invention discloses a cold cathode flat plate X-ray source capable of coding light emitting and a coding light emitting method, the ray source comprises a vacuum sealing cavity, a cathode assembly and an anode assembly, the cathode assembly and the anode assembly are arranged in the vacuum sealing cavity in a sealing manner, and the cathode assembly and the anode assembly are oppositely arranged at an interval; a vacuum working space for electron acceleration and X-ray generation is formed; the cathode assembly comprises a cathode substrate and a nano cold cathode electron source array arranged on the cathode substrate; the anode assembly comprises an anode substrate and a transmission anode target arranged on the anode substrate; wherein at least one of the nanometer cold cathode electron source array and the transmission anode target is in a coding state: when the nanometer cold cathode electron source array is in the coding state, the nanometer cold cathode electron source array comprises a micro-unit electron source array capable of independently addressing, and a preset coding pattern is formed; and when the transmission anode target is in a coding state, a metal coating with a preset coding pattern is formed on the surface of the anode substrate through a micromachining process so as to integrate a coding function.

In at least one embodiment an X-ray source includes an electron source configured to emit electrons, an acceleration set-up configured to accelerate the emitted electrons and a transmission window downwards of the acceleration set-up, the transmission window configured to let through X-rays generated by the accelerated electrons, wherein the transmission window incudes a carbon carrier, and wherein the carbon carrier includes sp2-hybridized carbon.

This inspection system 100 comprises: an electron source 102 which irradiates a sample 200 with an inspection beam; a detector 105 which detects secondary electrons obtained by irradiating the sample 200 with the inspection beam and outputs a detection signal; a laser device 107 which emits an action laser that changes the amount of secondary electrons; an electron gun 106 which emits an action electron beam that changes the amount of secondary electrons; and a computer system 140 which generates an image of the sample 200 on the basis of the detection signal. The computer system 140 generates an inspection image I1 related to the emission of the inspection beam, acquires the dimensions and the like related to a pattern on the sample 200 on the basis of the inspection image I1, generates an inspection image I2 related to the emission of the action laser and the inspection beam, acquires the material characteristics related to the pattern on the basis of the inspection image I2, generates an inspection image I3 related to the emission of the action electron beam and the inspection beam, and acquires the electrical characteristics related to the pattern on the basis of the inspection image I3.

The invention relates to an electron source, a preparation method of the electron source, an electron gun and application of the electron source. The electron source comprises an optical fiber and an electron emission layer, the optical fiber comprises a fiber core used for transmitting laser and a wrapping layer wrapping the fiber core, and the end face of the light outlet end of the optical fiber and the extending direction of the fiber core are arranged at an angle. The electron emission layer is arranged on the end face of the light emitting end of the optical fiber, and the electron emission layer at least comprises an electron excitation layer covering the fiber core. The electron excitation layer comprises at least one of a zero-dimensional material, a one-dimensional material and a two-dimensional material. Low-dimensional materials such as zero-dimensional materials, one-dimensional materials or two-dimensional materials are adopted as materials of the electron excitation layer, the low-dimensional materials have the atomic-scale thickness, back-incident electrons can be emitted without in-vivo transmission, and the electron emission efficiency is high; and the low-dimensional material has the characteristics of no dangling bond, stable property, high melting point, difficulty in damage, good stability, long service life and the like.

The invention relates to the technical field of biological denitrification, in particular to a nitrogen-doped carbon dot-based microbial electronic control denitrification system and application thereof. The system comprises electron donor microorganisms, electron acceptor microorganisms and nitrogen-doped carbon dots, the nitrogen-doped carbon dots serve as electron mediators outside cells, an efficient extracellular electron transfer network is constructed, and interspecific electron transfer resistance is reduced; meanwhile, the nitrogen-doped carbon dots can regulate and control intracellular electron transport chains and the energy metabolism process, the improvement of the reducing power and the energy level is promoted, and the metabolism mode optimization is realized. By cooperatively regulating and controlling generation, transmission and utilization of electrons under an extreme electron donor limited oligotrophic condition, the system disclosed by the invention can realize efficient denitrification, avoid nitrite accumulation, remarkably inhibit generation of nitrous oxide (N2O), reduce dependence on an external organic carbon source and an electron source, and improve the denitrification efficiency. And a new technical approach is provided for improving the deep denitrification efficiency under the low-carbon condition.

The invention relates to the technical field of hard alloy coating preparation, and discloses a preparation method of a HiPIMS coating adaptive to multi-grain-size hard alloy and a hard alloy cutting tool thereof. The preparation method of the HiPIMS coating adaptive to the multi-grain-size hard alloy comprises the main steps of vacuumizing, heating and heat preservation, argon glow discharge plasma etching and cleaning, arc electron source auxiliary cleaning and activation, and metal nitride coating deposition on the surface of a base material through the high-power pulse magnetron sputtering technology. According to the preparation method disclosed by the invention, the preparation of the metal nitride coatings on the hard alloy substrates with different grain sizes is realized, and the prepared metal nitride coatings have relatively high hardness and adhesive force, so that the problem that process parameters of hard alloys with different grain sizes need to be independently optimized in the prior art is solved; and the production efficiency is improved.

There is provided an X-ray source comprising an electron source for providing an electron beam, the electron source comprising a cathode, a Wehnelt, and an anode; an electron optic arrangement configured to deflect and focus the electron beam towards a target for generation of X-ray radiation; an arrangement for determining a quantity indicative of a width of the electron beam; and a controller configured to compute a quantity dependent on a divergence of the electron beam at an entrance of the electron optic arrangement based on the quantity indicative of a width of the electron beam; and apply a bias voltage to the Wehnelt such that the quantity dependent on the divergence of the electron beam at the entrance of the electron optic arrangement is adjusted towards a desired value. A corresponding method is also provided.

A method for reducing charge on a contaminated surface of an ion optical system 100, the contaminated surface 101 having a layer of charged contaminant 102 thereon. The method comprises: generating ch

To provide an electron source that can improve the temperature stability of an electron emission part during heating, and an electron gun and an electronic device including the same.SOLUTION: An electron source includes an electron emission part containing an alloy of iridium and rare earth elements, a support part made of metal, and a joint part that joins the electron emission part and the support part. The joint part includes a coating layer containing iridium and metal in the support part.SELECTED DRAWING: Figure 1

The invention relates to the technical field of medical X-ray, radio frequency and high-frequency diagnosis and treatment equipment, in particular to a full-static X-ray radiotherapy system and method. The system is composed of an electron source, an accelerating cavity, a two-dimensional deflector, an annular magnet set, a strip-shaped anode target, a multi-leaf collimator set, a vacuum cavity and the like. The electron beam enters the two-dimensional deflector after being accelerated, and any plane angle is obtained under the pure electromagnetic action; and then the X-rays are guided to the strip-shaped anode target along each electron channel in an annular magnetic field of the annular magnet group to bombard and generate the X-rays. The multi-leaf collimator performs spatial modulation on rays to form an irradiation field matched with a target region, so that multi-angle high-precision radiation irradiation without mechanical rotation is realized. The strip-shaped target surface increases the heat dissipation area and cooperates with an efficient cooling loop, so that the dose rate upper limit is improved, and the FLASH radiotherapy requirement is met. The scheme is compact in structure, low in cost and simple and convenient to maintain, overcomes the defects of large size, low efficiency, limited dosage and the like of traditional rotary radiotherapy equipment, and has wide clinical popularization value.

The invention discloses a scanning electron microscope three-dimensional shape measurement method and a measurement system thereof, which are characterized in that the method adopts a directional focusing method to perform separated focusing and measurement on the top and the bottom of a target structure, and three-dimensional shape parameters of the target structure are obtained through a definition evaluation function; the system comprises a displacement sample stage system, an electron beam imaging system and an image processing algorithm, the electron beam imaging system is composed of an electron source, an electromagnetic lens, an electron detector and an imaging module, and the electron beam imaging system generates a focused electron beam and obtains a secondary electronic signal image; the image processing algorithm is integrated in an electron beam imaging module in the CD-SEM, and accurate positioning, feature recognition and precise measurement of a target structure are achieved. Compared with the prior art, the method has the advantages that directional focusing of the top or the bottom is achieved by analyzing the gradient distribution characteristics of the image profile curve, and the measurement problem of separating and quantifying key three-dimensional parameters such as the side wall angle, the bottom key size and the structure depth is effectively solved.

Provided herein is an electron particle system comprising an electron source system comprising a high voltage component housed within a high voltage component volume occupied by an insulation gas, a sample chamber, and an electron beam column. Also provided herein is a charged particle system comprising a charged source system comprising a high voltage component housed within a high voltage component volume occupied by an insulation gas, a sample chamber, and an electron beam column. Further provided herein is a method of using an insulation gas in a high voltage component of an electron particle system.

The invention relates to an electron extraction method and system for a low-energy electron source. The method comprises the following steps: providing at least one cathode, at least one heating power supply and at least one control electrode; in a first time period, the heating power supply provides heating current for the cathode, so that the temperature of the cathode is increased to be higher than an electron emission threshold value, meanwhile, the potential difference between the control electrode and the cathode is controlled to be a suppression value, and electrons generated by the cathode are prevented from reaching a preset target spot; and in the second time period, the current is stopped from being supplied to the cathode, and meanwhile, the potential difference between the control electrode and the cathode is controlled to reach a guide value, so that electrons emitted by the cathode through waste heat reach the preset target spot and interact with target particles. Cathode heating is controlled in an intermittent energization mode, and accurate extraction of the low-energy scattered electron beam is achieved.

[Problem] To provide novel technology. [Solution] One aspect of the present invention provides a thermionic cathode. The thermionic cathode includes an electron source and a plurality of grids. The electron source is configured to emit electrons when heated. The plurality of grids have through-holes that allow electrons emitted from the electron source to pass in a predetermined direction. At least one of the grids is configured to reduce the movement speed of the electrons.

The invention discloses a pulse gamma radiation field calculation method and device based on solution of electron angle distribution, and the method comprises the steps: obtaining the dose values of different-angle electron incident dose sheet arrays, and solving the optimal incident electron angle distribution in the process of the different-angle electron incident dose sheet arrays; constructing an analog electron source by using the solved optimal incident electron angle distribution so as to obtain the position, energy and direction information of gamma particles at the shell of the pulse gamma device, and constructing an analog gamma source; based on the constructed simulation gamma source, a plurality of examples are operated in Geant4, and a simulated pulse gamma radiation field is calculated, so that the problem of radiation field calculation distortion caused by neglecting an accelerator pinch process in an existing approximate source method and the problem of long calculation time of an existing simulation electronic targeting method are solved; when the method is used for simulating and calculating the pulse gamma radiation field, the simulation accuracy is high, and the calculation speed is high.

Scanning electron microscope comprising an electron source (1) and a monochromator (20) which makes an electron beam (3) emitted by the electron source monochromatic, wherein: the monochromator comprises a magnetic field generator (21) that deflects the electron beam and an energy selection aperture (23) that allows a portion of the electron beam deflected by the magnetic field generator to pass through; the magnetic field generator is arranged on a trajectory of electrons emitted by a sample (11) and is configured to deflect the electrons emitted by the sample onto different trajectories by means of a magnetic field generated by it when the sample is irradiated with the electron beam that has passed through the monochromator; and A first detector (29) and a first aperture (27) arranged between the magnetic field generator and the corresponding first detector are provided on each of the different trajectories.

The utility model relates to the technical field of biomedical treatment, and discloses a biomedical membrane raw material drying and sterilizing integrated irradiation device which comprises a processing box, a control panel is arranged on the surface of the processing box, a sealing door is rotatably connected to the outer wall of the processing box, an electron beam emitter is arranged at the top of the processing box, and the electron beam emitter is connected with an electron source. An air exhaust heater is fixedly connected to the side wall of the processing box, a displacement assembly is arranged in the processing box, a sealing assembly is arranged on the other side of the processing box, the displacement assembly comprises a transmission belt, and the outer wall of the transmission belt is arranged in the processing box. According to the raw material storage device, the connecting block and the limiting block are driven by the transmission belt and matched with the limiting groove, so that the storage plate is conveniently stretched out and drawn back, raw materials are conveniently stored, workers do not need to stretch into the device to take and place the raw materials, and the problem that the raw materials need to stretch into the device and cannot be conveniently stored in the prior art is solved; and the convenience of placing the raw materials is improved.

An electron beam imaging device, comprising: a sample holder, the sample holder is used to hold a sample; an electron source, the electron source is used to generate a precursor electron beam; an aperture plate, the aperture plate includes an array of holes, the array of holes is used to generate an electron beam array from the precursor electron beam; an electron beam column, the electron beam column is used to guide the electron beam array onto the sample, wherein the electron beam column is configured to have a length L less than 300 mm.

The electron source is provided with: an electron emission unit containing an alloy of iridium and a rare earth element; a support part made of metal; and a joining part that joins the electron emission part and the support part. The bonding portion has a coating layer containing iridium and the metal in the support portion, and the coating layer contains iridium and the metal in the support portion.

The invention relates to the technical field of vacuum microelectronic devices, in particular to a nano cold cathode electron source array and a preparation method thereof, and the nano cold cathode electron source array comprises a substrate; the bottom cathode electrode strips are arranged in parallel; the bottom gate electrode strips are arranged in parallel; the insulating layer covers and separates the bottom cathode electrode strip and the bottom gate electrode strip, and the insulating layer is located at the top of the substrate; a top cathode electrode and a top gate electrode which are manufactured at the top of the insulating layer are respectively connected with the bottom cathode electrode strip and the bottom gate electrode strip through the first etching through hole and the second etching through hole; and the composite cold cathode comprises a nano cold cathode manufactured at the top of the top cathode electrode and a surface film coating the nano cold cathode. According to the invention, the conductivity, thermal conductivity, work function and other characteristics of the composite cold cathode can be regulated and controlled through the surface film, the field emission characteristic of the nano cold cathode in a cold cathode electron source is improved, large-area preparation can be realized, and the application of the cold cathode electron source in a large-area flat X-ray source device is expanded.

A device includes a two dimensional array of probes for inspecting a wafer. The two dimensional array includes at least one electron beam column or a magnetic element located in each dimension of the two dimensional array. Each electron beam column includes: an electron source, and a detector in line with the electron source. The two dimensional array is arranged such that each electron beam column is located adjacent to a magnetic element to minimize optical variation resulting from one or more magnetic fields.

The utility model relates to the technical field of electron sources, and provides an electron source and an electron gun, and the electron source comprises an optical fiber assembly, an electron emitter and an installation member. Wherein the optical fiber assembly comprises an optical fiber, the electron emitter comprises an electron excitation layer, the electron excitation layer is arranged on a laser emitting path of the optical fiber, and laser emitted by the optical fiber can directly irradiate the electron excitation layer, so that the electron excitation layer is excited by the laser and emits electrons; the electron excitation layer comprises at least one of a zero-dimensional material, a one-dimensional material and a two-dimensional material. And the mounting piece is arranged between the optical fiber assembly and the electron emitter and is used for detachably connecting the optical fiber assembly and the electron emitter. The electron source is simple in structure, and the electron emitter and the optical fiber are convenient to disassemble and replace.

A disclosed electron source includes: (A) a graphene layer having an electron emission area on a surface of the graphene layer; and (B) a p-type semiconductor layer that is in direct contact with the graphene layer and forms a Schottky junction with the graphene layer. In this way, the electrons are accelerated in the depletion layer in the p-type semiconductor layer. Moreover, unlike the MIS type electron source, since the electrons are not accelerated in the insulator layer, the dielectric breakdown caused by a large number of electrons travelling in the valence band of the insulator does not occur, and a long lifespan electron source can be realized. Note that the aforementioned p-type semiconductor layer preferably has a depletion layer having a width of 2.91 nm or more and 30 nm or less.

The invention discloses an acupuncture anesthesia system which comprises a grounding device, a wire and an acupuncture needle, one end of the grounding device is used for being conductively connected with the ground, the other end of the grounding device is conductively connected with one end of the wire, and the other end of the wire is conductively connected with the acupuncture needle; negative electrons in the ground can sequentially flow through the grounding device, the wire and the acupuncture needle to enter acupuncture points and blood of a human body or an animal body. The grounding device is directly communicated with the ground, and a ground super-large capacitor is used as a stable electron source; efficient and stable electron transmission is realized through a conductive path constructed by a wire; by means of an automatic electronic conduction path formed by the grounding device, the wire and the acupuncture needle, negative electron injection and analgesia can be continuously carried out for a long time without continuous manual operation, and therefore the analgesia effect of needle anesthesia is comprehensively improved.