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21 results about "Extra-low voltage" patented technology

Extra-low voltage (ELV) is an electricity supply voltage in a range which carries a low risk of dangerous electrical shock. There are various standards that define extra-low voltage. The International Electrotechnical Commission member organizations and the UK IET (BS 7671:2008) define an ELV device or circuit as one in which the electrical potential between conductor or electrical conductor and earth (ground) does not exceed 50 V a.c. or 120 V d.c. (ripple free). EU's Low Voltage Directive applies from 50 to 1,000 V a.c. and from 75 to 1,500 V d.c.

Floating inverter amplifier based on capacitor stacking and application thereof

Disclosed in the present invention is a floating inverter amplifier based on capacitor stacking, which boosts a power supply of the floating inverter amplifier to 2 times VDD by means of the capacitor stacking; under such condition, a transistor in the inverter may be better turned on, and a cascode structure can be applied to an inverting amplifier operating at a low power supply voltage. Furthermore, an ADC system employing the floating inverter amplifier of the present invention can process an input signal with a common-mode voltage of VDD and an amplitude up to 2 times VDD, which effectively addresses a problem of a reduced input signal amplitude under an ultra-low voltage, thereby increasing a signal-to-noise ratio of the system.
Owner:ZHEJIANG UNIV

An ideal diode circuit

An ideal diode circuit comprises a transistor, a low-voltage reference module, an ultra-low-voltage power supply module and a voltage drop detection circuit, the low-voltage reference module provides three different reference voltages and bias voltages, the ultra-low-voltage power supply module adopts N charge pumps in series to step up the voltage drop of the transistor, and outputs a control voltage Vcp to supply power for the internal circuit of the ideal diode, the voltage drop detection circuit compares the voltage drop of the transistor with the three reference voltages through comparators respectively, controls the opening or closing of the charge pump of the ultra-low-voltage power supply module, and realizes adaptive variable amplification multiple step-up of the voltage drop VIN-VOUT. The ideal diode control technology provided by the application utilizes variable charge pump amplification multiple, provides adaptive adjustment of the amplified voltage, and meets the continuous and stable operation of the circuit in the working voltage range of the ideal diode.
Owner:JIANGSU CHANGJING ELECTRONICS TECH CO LTD

Single event transient resistant voltage controlled oscillator circuit and phase locked loop circuit

This invention relates to the field of circuit hardening technology, and provides a voltage-controlled oscillator (VCO) circuit and phase-locked loop (PLL) circuit that are resistant to single-event transients. Addressing the issue that traditional three-mode relaxation oscillator (VCO) circuits are unsuitable for low-voltage conditions, especially when the power supply voltage drops to around 0.8V, this invention employs six oscillation branches coupled into three large oscillation loop circuits to improve loop gain. Furthermore, by combining bias circuits, comparators, and voting circuits for each path, the problem of increasing nonlinearity is avoided. This achieves a combination of large oscillation loops, bias circuits, and a three-mode VCO architecture, resulting in a VCO circuit that maintains high-frequency stable operation under ultra-low voltage conditions such as 0.8V, thus achieving a single-event transient resistance effect, especially at low voltages of 0.8V.
Owner:HUNAN RONGCHUANG MICROELECTRONICS CO LTD

Floating inverting amplifier based on capacitor stacking and application thereof

The invention discloses a floating inverting amplifier based on capacitor stacking. According to the floating inverting amplifier, the power supply of the floating inverting amplifier is increased to two times of VDD in a capacitor stacking mode; under the condition, the transistor in the inverter can be better conducted, and a cascode structure can be applied to an inverting amplifier with low supply voltage. Besides, an ADC system using the floating inverting amplifier can process input signals with common-mode voltage VDD amplitude up to two times of VDD, the problem that the amplitude of the input signals is reduced under ultralow voltage can be effectively solved, and the signal-to-noise ratio of the system is increased.
Owner:ZHEJIANG UNIV

A floating inverting amplifier based on capacitor stack and its application

The present invention discloses a floating inverting amplifier based on capacitor stacking, which increases the power supply of the floating inverting amplifier to 2 times V by capacitor stacking. DD Under this condition, the transistors in the inverter can be turned on better, and the common source and common gate structure can be applied to the inverting amplifier with low power supply voltage. In addition, the ADC system using the floating inverting amplifier of the present invention can handle the common mode voltage of V DD Amplitude up to 2 times V DD The input signal can effectively solve the problem of reduced input signal amplitude under ultra-low voltage and improve the system signal-to-noise ratio.
Owner:ZHEJIANG UNIV

TEG power generation circuit based on polar region natural temperature difference, working method and layout method

The invention provides a polar region natural temperature difference-based TEG power generation circuit, a working method and a layout method, relates to the technical field of temperature difference power generation, is adaptive to low temperature difference and field unattended scenes, and supplies energy to a 5V / 0.1 W monitoring acquisition module. The circuit comprises a TEG thermoelectric power generation sheet, an ultra-low voltage energy acquisition module, an energy storage module, a voltage equalization circuit, a control module, a load switch module, a low temperature preheating module and a monitoring acquisition load which are electrically connected. Micro-temperature-difference electric energy efficient collection is achieved through an ultra-low voltage starting chip and a high-turn-ratio transformer, a low-temperature low-leakage series super capacitor is adopted for energy storage, pulse type work and a low-temperature preheating strategy are combined, and a thermoelectric collaborative PCB layout is matched, so that the problem that low-power collection cannot stably supply energy to a high-power load under the micro-temperature difference is solved; and the system can be widely applied to unattended environment monitoring scenes of polar regions, high altitudes and the like.
Owner:POLAR RES INST OF CHINA

Ultra-low power consumption body-driven four-stage differential operation transconductance amplifier

The invention discloses an ultra-low power consumption body-driven four-stage differential operation transconductance amplifier, which belongs to the technical field of CMOS (Complementary Metal Oxide Semiconductor) analog integrated circuits, and comprises a biasing circuit, a body-driven differential input circuit, a composite differential amplification circuit, a frequency compensation circuit and a common-mode feedback circuit. The bias circuit provides stable bias under the ultra-low voltage of 0.3 V; the body-driven differential input circuit takes a PMOS tube body end as a differential signal input end, and improves equivalent transconductance in combination with a cross positive feedback structure; the composite differential amplification circuit realizes signal multi-stage amplification and rail-to-rail output through a two-stage differential common-source amplification unit and a feedforward AB type output unit; the frequency compensation circuit optimizes the frequency stability in a mode of combining a Miller capacitor and an RC (Resistance-Capacitance) compensation network; and the common-mode feedback circuit stably outputs a common-mode level. The amplifier is suitable for ultra-low power consumption application scenes such as implantable medical electronics and wearable equipment.
Owner:CHENGDU UNIV OF INFORMATION TECH

Body Biasing for Ultra-Low Voltage Digital Circuits

The digital circuit includes a logic circuit formed by logic gates. Each logic gate includes a p-channel MOSFET and an n-channel MOSFET. The body bias generator circuit applies an n-body bias voltage to the n-body bias node of the p-channel MOSFET and applies a p-body bias voltage to the p-body bias node of the n-channel MOSFET. The body bias generator circuit operates to: in a first mode, apply a ground power supply voltage to the n-body bias node of the logic gate as the n-body bias voltage and apply a positive power supply voltage to the p-body bias node of the logic gate as the p-body bias voltage; and in a second mode, apply a positive power supply voltage to the n-body bias node of the logic gate as the n-body bias voltage and apply a ground power supply voltage to the p-body bias node of the logic gate as the p-body bias voltage.
Owner:STMICROELECTRONICS (CROLLES 2) SAS

Portable class-II lubrication device

The present disclosure relates to a portable Extra-Low Voltage (ELV) class-II lubrication device comprising: at least one class-II power supply; at least one electric motor controller powered by the at least one power supply; at least one electric motor controlled by the at least one motor controller; at least one pump activated by the at least one electric motor and connected to at least one lubricant container, the pump configured to pump a lubricant from the at least one container to at least one target to be lubricated, wherein an output voltage of the at least one power supply and an output voltage of the at least one motor controller and an operating voltage of the at least one motor is equal to or less than 50 Volts AC or 120 Volts DC.
Owner:HOEV AS

Ultra-low voltage stabilizing circuit and method, and control module

The present application relates to the technical field of voltage stabilizing circuits, and in particular to an ultra-low voltage stabilizing circuit, method, and control module. The ultra-low voltage stabilizing circuit includes: a voltage output node, which is used to output a first voltage; a control module, which controls the first voltage based on a user's operation instruction, and the operation instruction carries a target value of the first voltage; a voltage stabilizing module, which is used to discharge the leakage voltage acting on the voltage output node, and includes a first discharge resistor and a switching transistor, the first discharge resistor and the switching transistor are connected in series between the voltage output node and the ground potential; wherein the control module is configured to control the switching transistor to turn on in response to the target value being less than a set threshold, and to control the switching transistor to turn off in response to the target value being greater than the set threshold.
Owner:上海芯诣电子科技有限公司

Write assist scheme for ultra low voltage memory design enablement

A memory array includes a write assist circuit that helps ensure that write operations can be effectively and efficiently performed in spite of low voltage supply levels. The write assist circuit includes a negative voltage generator that generates a negative voltage during write operations and applies the negative voltage to a bitline coupled to a selected memory cell. The negative voltage helps ensure that data is quickly and properly written to the memory cell. The write assist circuit also includes a leakage control circuit that helps reduce leakages associated with generation of the negative voltage by applying the negative voltage to other portions of the memory array in order to reduce leakage currents.
Owner:STMICROELECTRONICS INT NV

Super capacitor management unit and system capable of self-starting under ultra-low voltage

The utility model discloses a super capacitor management unit capable of self-starting under ultra-low voltage, and belongs to the technical field of super capacitor management. Comprising an acquisition equalization circuit, a control communication circuit, a power supply circuit and a boost circuit. The booster circuit is connected with the positive electrode and the negative electrode of the super capacitor and is used for taking power from the super capacitor and inputting the power into the power supply circuit after boosting; the power supply circuit takes power from the booster circuit and inputs the power to the acquisition equalization circuit and the control communication circuit to provide working power for the acquisition equalization circuit and the control communication circuit; one end of the acquisition equalization circuit is connected with the super capacitor, and the other end is connected with the control communication circuit. According to the utility model, the booster circuit is additionally arranged in the CMU topology, so that the Vthreshold can be greatly reduced, the monitoring blind area when the super-capacitor module is started from 0V is shortened, and the effect is more obvious under the scene that a plurality of super-capacitor modules are connected in series for use.
Owner:SIEYUAN QINGNENG ELECTRICAL & ELECTRONICS CO LTD

Novel CMOS (complementary metal oxide semiconductor) body-driven transconductance amplifier circuit with ultralow voltage, ultralow power consumption and high common-mode stability

The invention discloses a novel CMOS (Complementary Metal Oxide Semiconductor) body-driven transconductance amplifier circuit with ultralow voltage, ultralow power consumption and high common-mode stability, which is characterized in that a transconductance stabilizing and enhancing technology is introduced on the basis of an existing rail-to-rail body-driven transconductance amplifier, so that stable high transconductance in a rail-to-rail input range is realized; compared with a rail-to-rail body driving transconductance amplifier in the prior art, the rail-to-rail body driving transconductance amplifier has the minimum transconductance change within the rail-to-rail range and has the high transconductance energy consumption ratio. The transconductance amplifier provided by the invention can be used in a low-voltage and low-power-consumption system such as a biomedical system, and has a wide application range.
Owner:NORTHWESTERN POLYTECHNICAL UNIV

A method for realizing memristor memristance based on ion diffusion and phase change mechanism

This invention belongs to the field of semiconductor storage technology and proposes a method for achieving memristor memristance based on ion diffusion and phase change mechanisms. The memristor structure comprises upper and lower electrode layers and a middle functional layer of Ag2Te semiconductor. The method is characterized by applying an ultra-low voltage to the memristor, inducing phase change and ion diffusion in the Ag2Te semiconductor, which in turn induces a resistive change to achieve memristor memristance. The invention employs a unidirectional positive pulse voltage signal input mode, which achieves stable resistive switching, avoiding the drawbacks of ion diffusion and enabling controllable switching of the memristor's resistance between high and low resistance states.
Owner:WUHAN UNIV OF TECH

DC power system for modular workstations

The workspace includes a power input receptor configured to receive input power at a first voltage level, wherein the first voltage level is an ultra-low voltage. The workspace also includes a voltage regulator configured to regulate the input power and output regulated power at a second voltage level, and a power distribution bus. The power distribution bus is configured to receive input power from the power input recipient. The workspace also includes a secure disconnect device configured to disconnect the input power from the power distribution bus in response to detecting an adverse condition.
Owner:MILLERKNOLL INC

Energy information integrated temperature sensor and preparation method

The present invention discloses a temperature sensor integrating energy and information and a method for making the same. This method belongs to the field of micro-nano physical power supply technology and is characterized in that the method for making the temperature sensor integrating energy and information comprises at least the following steps: S1. preparing a thermoelectric device; S2. designing a thermoelectric power generation circuit comprising an ultra-low voltage DC / DC boost converter, a storage capacitor, and three outputs: a charging output, an LDO output, and a Vout output; S3. designing a cold-junction temperature compensation circuit; S4. designing a filter module and an AD conversion module within a controller; and S5. circuit assembly. The present invention utilizes the temperature sensitivity of the thermoelectric device's output voltage and its inherent power generation capabilities to design a power generation circuit and compensation circuit, thereby realizing an integrated energy and information temperature sensor.
Owner:CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST

Auxiliary redundant power supply for an energy storage system and energy storage system

An auxiliary power supply for an energy storage rack of a high-voltage DC system. The power supply has at least one AC power supply branch with input terminals, transfer terminals and a low voltage transformer. The low voltage transformer has an input branch configured for receiving AC electrical power from the input terminals, a transfer branch configured for transferring the AC electrical power to the transfer terminals, and s a supply branch configured for transforming the received AC electrical power to a lower voltage in extra low voltage range for supplying a control unit. The power supply also has at least one DC power supply branch that includes an LV DC power source configured for supplying DC electrical power to the control unit. Also an energy storage rack and a energy storage system.
Owner:SKELETON TECH GMBH

Lighting system comprising a safety extra low voltage power supply for distributing to one or more up converters luminaires

PCT designated stage expiredWO2025149477A1Ac network circuit arrangementsConvertersExtra-low voltage
A lighting system, comprising a power supply connectable to an Alternating Current, AC, mains voltage, said power supply being arranged for converting said AC mains voltage into a Safety Extra Low Voltage, SELV, being lower than said AC mains voltage, a structurally pliable power distribution system electrically connectable to said power supply and arranged for distributing said SELV to one or more luminaires, a luminaire, comprising a lamp socket arranged for receiving an AC mains powered lamp and / or a substrate having an AC mains powered luminaire and an upconverter arranged for upconverting said SELV, received from said power distribution system, into an upconverted voltage being higher than said SELV, for providing said upconverted voltage to electrical contacts in said lamp socket and / or to electrical contacts connected to said AC mains powered luminaire.
Owner:SIGNIFY HOLDING BV

An ultra-low input voltage DC / DC boost device

An ultra-low input voltage DC / DC boost device includes a first transistor Q1, a second transistor Q2, an inductor L1, an internal power supply module, a PWM generation module and a low-voltage startup control module. When the power supply voltage V3 does not reach the corresponding voltage threshold, the low-voltage startup control module outputs a rising and periodic voltage signal CLKN to drive the second transistor Q2 to turn on and off according to the received reverse POK signal, so that the power supply voltage V3 rises until the power OK submodule detects that the power supply voltage V3 reaches the predetermined threshold, and then turns off the low-voltage startup control module. Therefore, the present invention can effectively solve the limitation of the boost device on the input power supply voltage V1, that is, the input power supply voltage V1 can also ensure that the DC / DC boost device starts and works normally under ultra-low voltage conditions.
Owner:SHANGHAI SHININGIC ELECTRONICS TECH CO LTD

Ideal diode circuit

An ideal diode circuit comprises a transistor, a low-voltage reference module, an ultra-low-voltage power supply module and a voltage drop detection circuit, the low-voltage reference module provides three different reference voltages and bias voltages, and the ultra-low-voltage power supply module boosts the voltage drop of the transistor by adopting N charge pumps connected in series and outputs a control voltage Vcp, and the voltage drop detection circuit is used for respectively comparing the voltage drop of the transistor with three reference voltages through a comparator, and controlling the opening or closing of a charge pump of the ultra-low voltage power supply module, so that the self-adaptive variable amplification factor boosting of the voltage drop VIN-VOUT is realized. According to the invention, a novel ideal diode control technology is provided, and a variable charge pump amplification factor is utilized to provide an adaptively adjusted amplification voltage, so that a circuit can continuously and stably work within an ideal diode working voltage range.
Owner:JIANGSU CHANGJING ELECTRONICS TECH CO LTD

Ultra low-voltage SRAM architecture

Disclosed herein a static random-access memory (SRAM) circuits designed to operate reliably in scenarios where the memory array supply voltage (VDDMA) significantly exceeds the peripheral circuit supply voltage (VDDMP). Various configurations of pre-charge and pre-charge assist circuits are disclosed, each aimed at preventing unintended state changes in bitcells during read operations. These circuits employ techniques such as charge transfer from a higher voltage domain, capacitive coupling, and sense amplifier decoupling to boost bitline voltages above VDDMP during critical read phases. This enables stable SRAM operation with a large voltage differential between VDDMA and VDDMP, facilitating improvements in both performance and power efficiency.
Owner:STMICROELECTRONICS INT NV