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Ultra low-voltage sub-bandgap voltage reference generator

A voltage reference, low voltage technology used in instruments, regulating electrical variables, control/regulating systems, etc.

Active Publication Date: 2009-01-21
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While some conventional bandgap reference circuits can operate at voltages slightly below 1 volt, most known conventional bandgap reference circuits are not suitable for use with supply voltages below 0.9 volts

Method used

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Embodiment Construction

[0015] The invention will now be described in detail with reference to various embodiments depicted in the accompanying drawings. In the following description, specific details are set forth in order to provide a thorough understanding of the invention.

[0016] FIG. 1 is a simplified schematic diagram illustrating a conventional sub-bandgap reference generator 100 . The conventional sub-bandgap reference generator 100 is used to generate a stable low reference voltage using conventional Bi-CMOS technology. Conventional bandgap reference circuit 100 includes two PNP bipolar transistors 106 and 108 with base terminals coupled to collector terminals, four resistors 110, 111, 112 and 113, three PMOS transistors 116, 118 and 130, and a differential Amplifier 120.

[0017] The bases and collectors of the two PNP bipolar transistors 106 and 108 are grounded. The emitter of PNP bipolar transistor 106 is directly coupled to node 122 , while the emitter of PNP bipolar transistor 108...

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PUM

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Abstract

A low-voltage sub-bandgap reference circuit is disclosed. In one embodiment, the low-voltage sub-bandgap voltage reference circuit includes a differential amplifier and a first bipolar transistor with its base and collector coupled to an electrical ground. The reference circuit further includes a second bipolar transistor with base and collector coupled to the electrical ground. The reference circuit further includes a DC bias circuit supplying a predetermined voltage output between a high and low voltage terminal, the high voltage terminal being coupled to both collectors of the first and second bipolar transistors and the low voltage terminal being coupled to both bases of the first and second bipolar transistors.

Description

technical field [0001] The present invention relates generally to an integrated circuit (IC), and more particularly, to a sub-bandgap reference voltage generator. Background technique [0002] The increasing demand for portable devices and shrinking technology dimensions have resulted in lower supply voltages for digital circuits. A voltage reference generator is one of the main standard units of many integrated circuits (ICs). Bandgap reference generators that can operate above a 1V supply voltage are widely used in DRAM or flash memory. The bandgap voltage reference must be at least intrinsically accurate and insensitive to temperature, power supply and load variations. [0003] The principle of the bandgap circuit is that two groups of diode-connected bipolar junction transistors (BJT) operate at different emitter current densities. By using the positive temperature dependence of a PTAT (Proportional to Absolute Temperature) circuit comprising one group of transistors ...

Claims

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Application Information

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IPC IPC(8): G05F3/22
CPCG05F3/30
Inventor 谢祯辉
Owner TAIWAN SEMICON MFG CO LTD
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