671 results about "Reference circuit" patented technology

The invention relates to the technical field of integrated circuits, in particular to a band-gap reference voltage source, which comprises a high-order compensation circuit, a low-order compensation circuit, a low-order compensation circuit, a low-order compensation circuit and a low-order reference circuit, the band-gap reference circuit is used for generating a positive temperature coefficient voltage and a negative temperature coefficient voltage, performing first-order temperature compensation on the negative temperature coefficient voltage by using the positive temperature coefficient voltage, performing high-order curvature compensation on the negative temperature coefficient voltage based on the target compensation current, determining the compensated voltage as a reference voltage and outputting the reference voltage; according to the band-gap reference voltage source, high-order compensation is introduced through the sub-threshold MOS tube, the negative temperature coefficient voltage can be well reduced, the reference voltage with the temperature coefficient approximate to zero is obtained, and practicability is high.

The invention provides a system and a method for detecting and preventing early explosion of an electronic detonator chip. The method comprises the following steps: S1, detecting a current charging voltage; s2, selecting a reference voltage, comparing the reference voltage with the current charging voltage, and obtaining a comparison result based on a comparator; and S3, taking an early explosion prevention measure according to a comparison result. According to the invention, the multi-gear reference circuit and the comparator are used, high-precision detection of voltage change of the energy storage capacitor is realized, and the digital control logic circuit is matched to detect that the voltage of the energy storage capacitor drops abnormally and rapidly, so that an early explosion symptom is identified; by arranging the bypass switch, the energy storage capacitor is short-circuited to the ground when an early explosion symptom is recognized, so that energy of the energy storage capacitor is not released through the ignition element, early explosion is prevented, and good practicability is achieved.

The invention discloses an ultrahigh-precision low-noise band-gap reference circuit, and relates to the technical field of integrated circuit design, the ultrahigh-precision low-noise band-gap reference circuit comprises a starting turn-off circuit, a reference core circuit, a high-order temperature compensation circuit and a digital trimming circuit, the starting turn-off circuit is connected with the reference core circuit, and the high-order temperature compensation circuit is connected with the digital trimming circuit through a Brokaw type band-gap reference topological structure. Accurate compensation of the voltage is achieved through deep negative feedback of the operational amplifier and a high-order temperature compensation circuit, and the temperature drift of the reference voltage is as low as 0.5-2 ppm / DEG C (-40 DEG C to 130 DEG C) and is increased by 5-10 times compared with a traditional band-gap reference (5-10 ppm / DEG C). The power consumption of the system can be saved by turning off the circuit when the circuit is not used, meanwhile, the digital trimming module is added to replace laser trimming in traditional engineering, the upper limit of the trimming range is improved, high-order temperature compensation and the digital trimming circuit are introduced, the precision of output voltage is improved, different devices are replaced, and the noise of the circuit is reduced. The problems that a traditional high-voltage band-gap reference temperature coefficient is high and noise is large are solved.

The utility model relates to the related field of voltage reference circuits, in particular to a voltage reference circuit with a simple structure and capable of realizing high-voltage application, which comprises a resistor R5 connected with a high-voltage power supply, MOS (Metal Oxide Semiconductor) transistors PM1, PM2 and PM3, triodes Q0, Q1 and Q2, and MOS transistors NM0 and NM5, compared with a traditional structure, the circuit is simple in structure and easy to implement, and due to the fact that an operational amplifier and a band-gap reference circuit are not needed, and the number of electronic components is small, the circuit area is greatly reduced; the high-voltage-resistant voltage-reducing and voltage-stabilizing circuit is simple in structure, low in process requirement, free of a high-voltage process and free of additional special devices, adopts a low-voltage process to enable the circuit to generate a low-voltage reference capable of bearing a high-voltage power supply of more than 100V, achieves the purposes of high-voltage resistance, voltage reduction and voltage stabilization, and has the characteristics of low cost and convenience in design, so that the high-voltage-resistant voltage-reducing and voltage-stabilizing circuit has very high use value and application value and is suitable for popularization.

A bandgap reference circuit includes a first, a second and a third current source, a first and a second amplifier. The first, the second and the third current source each includes two cascode PMOS transistors for reducing the voltage stress applied to PMOS transistors when receives a high power supply voltage. The first amplifier controls the PMOS transistors in the first and the second current source to ensure that the PMOS transistors have enough headroom when receives a low power supply voltage. The second amplifier provides a gain-boosting loop to prevent the system mismatch of the PMOS transistors in the first, the second and the third current source. A temperature coefficient adjustment unit introduces positive temperature coefficients and negative temperature coefficients in the currents generated by the first and second current source, and a resistor generates the reference voltage according to a current duplicated by the third current source.

The application relates to a high-order curvature compensation band gap reference circuit, which comprises a first-order band gap reference circuit, a high-temperature region curvature compensation circuit and a starting circuit. The first-order band gap reference voltage is realized by the following technologies: the voltage generated by the current of PMOS tube M4 on resistors R3-R4 and the voltage generated by the current of PMOS tube M6 on resistor R4 both have positive temperature coefficients, the voltage generated by the current of PMOS tube M5 on resistors R3-R4 and the voltage generated by the current of PMOS tube M7 on resistor R4 both have negative temperature coefficients; the working area of NMOS tube M13 gradually changes from the deep triode region, the triode region to the saturation region with the increase of temperature by controlling the working of NMOS tube M13 by the technology that the gate voltage of NMOS tube M12 increases with the increase of temperature, so that the current of PMOS tube M14 is high-order nonlinear with temperature, and the first-order band gap reference voltage is temperature compensated, thereby obtaining the high-order temperature compensation band gap voltage.

The invention relates to a radiation hardening band-gap reference current source circuit, and belongs to the technical field of radiation resistance of integrated circuits. Over-degradation of the threshold in a high total dose environment is focused on a circuit design level, closed-loop adjustment of the threshold voltage is realized through total dose detection and a dynamic compensation mechanism, and reliability and stability of the circuit in the high dose radiation environment are remarkably improved. Through the embedded logic of the reinforced circuit, the anti-radiation performance of the reinforced circuit is ensured, and the reinforced circuit can work normally in a high-dose environment. Reliable triggering and system self-recovery in a full dose range can be realized through a bias closed-loop design provided by a reference circuit for a reinforced loop, and the application requirements of extreme environments such as spaceflight and nuclear energy are met. The method has the advantages of anti-radiation effect, good dynamic nature, strong transportability and the like.

The invention discloses a circuit and a method for realizing current sharing through master-slave parallel connection, and the method is characterized in that a master machine and a plurality of slave machines are connected in parallel, and are respectively connected to a current sharing control bus through an isolation chip, a TTL and differential mutual conversion unit and an information gating switch in sequence, thereby forming a parallel current sharing circuit; comprising a host issuing current reference circuit and a processing circuit after a slave receives a current reference signal from the host. After a plurality of instrument power supplies are connected in parallel, a user sets a master-slave parallel mode on a front panel of the power supplies and selects a master computer, and other computers are slave computers; when a plurality of power supplies work in parallel, the host issues a current reference signal to the current sharing control bus through the current reference generation circuit, and the slave outputs a corresponding current value according to the current reference signal issued by the host. One of a plurality of power supply modules can be randomly selected as a main module, the flexibility is high, the stability is good, and the power supply has the characteristics of simplicity in wiring and control, low transmission loss of control signals, difficulty in interference of the control signals, balanced output control of all the power supply modules and the like.

The invention discloses a low-temperature drift reference circuit, which belongs to the technical field of electronic circuits and comprises a starting unit, a reference core unit and a base current absorption unit, the starting unit is connected with the reference core unit and the base current absorption unit, and the reference core unit is connected with the base current absorption unit. According to the low-temperature-drift reference circuit, the T-type resistor network is adopted, negative temperature coefficient voltage is compensated depending on a positive temperature coefficient voltage expansion item, and low-temperature-drift reference voltage can be obtained; the magnitude of the reference voltage can be adjusted by changing the proportional relation between the resistance type and the resistance value of the resistance network and the current mirror.

The invention discloses a low-temperature-drift band-gap reference source circuit. The low-temperature-drift band-gap reference source circuit comprises a starting circuit, a PTAT current generating circuit, a CTAT current generating circuit and an output circuit. The PTAT current generation circuit is used for generating positive temperature coefficient current, and adopts a power supply voltage isolation structure consisting of two PMOS (P-channel Metal Oxide Semiconductor) tubes and two NMOS (N-channel Metal Oxide Semiconductor) tubes to isolate the interference of power supply voltage; the CTAT current generating circuit is used for generating a negative temperature coefficient current and adopts a clamping structure consisting of two triodes, so that the CTAT current generating circuit is not influenced by a power supply voltage; and the output circuit is used for outputting low-temperature-drift reference current and / or voltage. An operational amplifier clamping structure is not used, the complex structure of an integrated operational amplifier is omitted, the circuit structure is simplified, the area and power consumption are reduced, the influence of offset voltage of the integrated operational amplifier can be avoided, and practicability is high. In addition, the reference circuit further comprises a temperature compensation circuit, temperature high-order compensation is carried out through a feedback network formed by two resistors, and the reference current and the reference voltage are more accurate.

The invention belongs to the technical field of complementary metal-oxide-semiconductor analog circuits, and particularly relates to an ultra-wide power linear voltage stabilizer based on a BCD high-voltage process. Comprising a high-voltage-to-low-voltage biasing circuit, a low-voltage self-starting circuit, a band-gap reference circuit, a high-voltage source linear voltage stabilizer and an instantaneous pulse breakdown locking circuit. The high-voltage-to-low-voltage bias circuit provides bias voltage for the whole circuit, the low-voltage self-starting circuit automatically starts the circuit when the circuit is in a low-voltage condition to ensure stable operation of the circuit, the band-gap reference circuit provides stable reference voltage for the high-voltage source linear voltage stabilizer, the high-voltage source linear voltage stabilizer comprises a two-stage operational amplifier, and the two-stage operational amplifier is connected with the high-voltage source linear voltage stabilizer. And the secondary operational amplifier compares the reference voltage with the divided output voltage and outputs a feedback signal, thereby realizing adjustment of the output voltage. And the instantaneous pulse breakdown locking circuit is used for preventing breakdown under the abnormal condition that the circuit load impulse is low. When the VBAT of the power supply is in the range of 1.1 V to 5 V and the temperature is-55 DEG C to 150 DEG C, the output absolute value follows the VBA.

The invention discloses a high-voltage pre-modulation circuit. The high-voltage pre-modulation circuit comprises a port protection circuit, a self-starting biasing circuit, a reference circuit and a step-down modulation circuit, the port protection circuit has a negative voltage protection function, when the port voltage is negative voltage, voltage transmission can be blocked, and internal devices are prevented from being damaged; the self-starting bias circuit is quickly conducted when the power supply is powered on, provides bias current for the port protection circuit and provides bias voltage for the step-down modulation circuit; the reference circuit takes the output voltage of the step-down modulation circuit as the power supply voltage, and the output reference voltage of the reference circuit is the reference level of the step-down modulation circuit; the step-down modulation circuit can realize the function of converting high power supply voltage into low voltage VOUT, and provides stable power supply voltage for other modules in the integrated circuit. The high-voltage pre-modulation circuit with the negative-voltage protection function has the negative-voltage protection function, only one path of power supply voltage is needed, high reliability is achieved, and meanwhile the system design difficulty is lowered.

The utility model belongs to the technical field of human body pulse detection, and discloses a pulse amplifying circuit based on a pressure sensor and a pulse signal acquisition system, and the circuit comprises the pressure sensor, a first-stage amplifying circuit, a second-stage amplifying circuit, a third-stage amplifying circuit, a fourth-stage amplifying circuit and a reference circuit, the signal input end of the first-stage amplification circuit receives an original pulse signal output by a pressure sensor and then outputs a differential amplification signal, the signal input end of the second-stage amplification circuit receives the differential amplification signal and then suppresses a common-mode signal and outputs a second amplification signal, and the signal input end of the third-stage amplification circuit receives the second amplification signal and then outputs the third amplification signal. The isolated direct current passes through a signal and outputs an alternating current signal in a following mode, a fourth-stage amplifying circuit receives the alternating current signal and then amplifies and filters the alternating current signal, and an amplified pulse signal is obtained and output. According to the utility model, the cost of the product is reduced, the circuit is simplified, the practicability is enhanced, and the pulse signal can be accurately measured.

The invention provides a band-gap reference circuit and a method for improving the temperature coefficient of the band-gap reference circuit. The band-gap reference circuit comprises a core circuit, a load and bias circuit, a dual temperature curvature compensation structure and an output circuit. Collector electrodes of the first bipolar transistor, the second bipolar transistor and the third bipolar transistor are grounded. The dual temperature curvature compensation structure comprises a resistance network used for forming a first compensation path and a second compensation path; the first compensation path is configured to generate a first compensation current using temperature characteristics of the second and third bipolar transistors. The second compensation path is configured to generate a second compensation current using temperature characteristics of the first and third bipolar transistors. According to the invention, a dual temperature curvature compensation structure is arranged, two different compensation currents are generated in parallel, different non-linear sources are corrected respectively, and finally, the accurate compensation of the overall temperature coefficient is realized through linear superposition, so that the temperature curvature can be effectively inhibited.

The invention provides a band-gap reference circuit for a low-voltage circuit, which comprises a clamping operational amplifier circuit for receiving an input voltage and outputting an amplified input voltage under the control of a bias voltage; the feedback adjustment circuit performs feedback adjustment on the amplified input voltage to obtain a feedback voltage; the current mirror circuit generates reference voltage and reference current according to the feedback voltage; the transistor circuit generates a positive / negative temperature coefficient current by using a reference voltage and generates an input voltage. The reference voltage output circuit generates and outputs a bandgap reference voltage using the reference current. The threshold voltage of a transistor in the circuit is reduced by using a substrate bias technology, the input node of the clamping operation amplification circuit is optimized, the minimum power supply voltage for working of the circuit is reduced, the loop is improved by using the feedback adjustment circuit, the power supply suppression capability is improved, and the stability of the output band-gap reference voltage is improved; the problems of how to improve the minimum power supply voltage of the band-gap reference circuit and how to optimize the power supply suppression effect are solved.

The invention discloses a high-power-supply-rejection-ratio band-gap reference circuit with base current correction and high-order temperature compensation, which comprises a pre-voltage-stabilizing circuit module used for generating and outputting internal power supply voltage according to external power supply voltage, the internal power supply voltage is supplied to the band-gap reference core circuit module so as to isolate transmission of power supply noise to reference output; the high-order temperature compensation circuit module is used for generating nonlinear compensation current according to the bias voltage; the band-gap reference core circuit module is used for generating current in direct proportion to absolute temperature, reference voltage and reference output voltage based on internal power supply voltage and feeding back the reference voltage to the pre-voltage-stabilizing circuit module to serve as bias reference; and the base current correction circuit module is used for sampling the base current of the bipolar transistor in the band-gap reference core circuit module. On the premise that the circuit structure and the power consumption are reasonable, the temperature drift of the reference voltage is reduced, and the power supply suppression capability is improved.

The invention provides a low-dropout voltage stabilizing circuit without an off-chip capacitor, a chip and electronic equipment, the circuit comprises a low-dropout voltage stabilizing circuit and a transient response enhancement circuit, the low-dropout voltage stabilizing circuit is used for generating a first bias voltage and a second bias voltage and transmitting the first bias voltage and the second bias voltage to the transient response enhancement circuit; the reference circuit is also used for transmitting the reference voltage output by the reference circuit to the transient response enhancement circuit; and the transient response enhancement circuit is used for receiving the first bias voltage, the second bias voltage and the reference voltage, and when the reference voltage changes, the variable quantity is coupled to the low-dropout voltage stabilizing circuit, so that the low-dropout voltage stabilizing circuit adjusts the reference voltage output by the low-dropout voltage stabilizing circuit based on the variable quantity. The reference voltage is detected through the transient response enhancement circuit, when the reference voltage changes, the variable quantity is coupled to the low-dropout voltage stabilizing circuit to adjust the reference voltage, and the transient response speed of the LDO without the off-chip capacitor can be increased.

A voltage selector includes a first input terminal for receiving a first input voltage, a second input terminal for receiving a second input voltage, an output terminal, a main select circuit and a reference circuit. The main select circuit includes a select unit for outputting a higher input voltage as an output voltage to the output terminal, and an auxiliary unit for pulling up the output voltage to the first input voltage according to a reference voltage when the first input voltage equals to the second input voltage. The reference circuit pulls up the reference voltage according to a higher one of the first input voltage and the second input voltage, and pulls down the reference voltage when the first input voltage equals to the second input voltage and the output voltage is lower than the first input voltage by a threshold voltage.

The invention discloses a band-gap reference circuit, a working method thereof and electronic equipment, and relates to the technical field of band-gap reference circuits. The circuit comprises a pre-voltage-stabilizing module; the starting module is electrically connected with the pre-voltage-stabilizing module; the band gap core module is electrically connected with the starting module; the operational amplifier module is electrically connected with the band gap core module and the pre-voltage-stabilizing module; wherein the band-gap core module is used for outputting a reference voltage source; the pre-voltage-stabilizing module is used for buffering power supply voltage to obtain working voltage and providing the working voltage for the starting module and the operational amplifier module, and the pre-voltage-stabilizing module is further used for feeding back the influence of fluctuation of the power supply voltage on the reference voltage source to the pre-voltage-stabilizing module for readjustment; the starting module is used for starting the band gap core module; and the operational amplifier module is used for performing negative feedback regulation on the reference voltage source. The circuit can provide a reference voltage source with high PSRR and low temperature drift.

The invention provides a band-gap reference circuit without an operational amplifier, and the circuit comprises a positive temperature coefficient generation module which generates negative feedback current with a positive temperature coefficient through a cross coupling structure composed of four transistors; the reference voltage generation module copies the output of the positive temperature coefficient generation module through a mirror image so as to generate a positive temperature coefficient voltage on an internal resistor and superposes a negative temperature coefficient voltage so as to obtain a band-gap reference voltage with a zero temperature coefficient; the starting module is connected with the output of the positive temperature coefficient generation module and injects current into the reference voltage generation module at the initial stage of establishing the band-gap reference voltage; and the current output module copies the output of the positive temperature coefficient generation module through a mirror image so as to generate zero temperature coefficient output current. An operational amplifier does not need to be introduced, so that extra device noise is not introduced, and the circuit can be widely applied to circuits sensitive to noise, such as phase-locked loops and oscillators.

The present disclosure relates to an integrated circuit for generating an intermediate supply voltage which is immune to glitches on power supply voltage. An example integrated circuit comprises a Band Gap Reference (BGR) circuit configured to generate a reference voltage immune to glitches on a power supply. The integrated circuit also comprises a Low Dropout (LDO) circuit which gets the reference voltage from the BGR circuit. The LDO circuit is configured to generate a glitch immune intermediate supply voltage based on the reference voltage and the power supply which is prone to glitch.

The invention provides a band-gap reference circuit and a chip, and the circuit comprises a voltage generation module which is used for generating a first voltage with a positive temperature coefficient and a second voltage with a negative temperature coefficient, and generating a reference voltage with a zero temperature coefficient according to the first voltage and the second voltage; and the load driving module is used for providing load driving capability for the voltage generation module so as to carry out driving buffering on a post-stage circuit. The whole circuit does not contain an operational amplifier clamp and can provide reference voltage with a zero temperature coefficient, so that the power consumption of the band-gap reference circuit is effectively reduced; meanwhile, the load driving module provides load driving capacity for the voltage generation module, so that the output reference voltage has the load driving capacity, and the problems that an existing band-gap reference circuit is high in power consumption and does not have the load driving capacity are solved.

An error sampling and decoding system is disclosed. The system includes a reference circuit configured to generate first and second reference values; a comparator configured to receive a first error symbol, and to generate serial error data representing the first error symbol based on successive comparisons of the first error symbol with the first and second reference values; and a deserializer circuit configured to generate parallel data corresponding with the first error symbol based on the serial error data.

The invention relates to the technical field of analog integrated circuit design, and particularly discloses a segmented temperature compensation band-gap reference circuit capable of trimming low temperature drift, which comprises a starting circuit, a first-order temperature compensation voltage circuit, a first-order temperature compensation current circuit and a segmented temperature compensation voltage circuit, the starting circuit is used for filling a target current into the first-order temperature compensation voltage circuit during power-on, so that the first-order temperature compensation voltage circuit is separated from a degeneracy point; the first-order temperature compensation voltage circuit is used for providing band-gap reference voltage and providing bias current for the first-order temperature compensation current circuit and the segmented temperature compensation voltage circuit. The first-order temperature compensation current circuit is used for providing reference current and providing bias current for the segmented temperature compensation voltage circuit; and the segmented temperature compensation voltage circuit is used for superposing the generated compensation voltage onto the band-gap reference voltage so as to further reduce the temperature coefficient of the band-gap reference voltage. The temperature drift of the band-gap reference voltage can be reduced.

The invention discloses a band-gap reference circuit and a calibration method, and the circuit comprises a reference core module which is used for outputting a band-gap reference voltage with first-order temperature compensation; the high-order compensation module is used for generating linear voltage in positive correlation with temperature, comparing the linear voltage with a plurality of reference voltages, generating high-order compensation current according to a comparison result, and compensating the band-gap reference voltage according to the high-order compensation current so as to generate reference output voltage with a zero temperature coefficient; and the reference signal generation module is used for outputting the plurality of reference voltages to the high-order compensation module according to the reference output voltage. According to the band-gap reference circuit provided by the embodiment of the invention, the high-order component in the band-gap reference voltage can be accurately quantified, so that the corresponding compensation current can be quantitatively generated to compensate the high-order temperature coefficient in the band-gap reference voltage, the influence of the temperature on the reference output voltage is effectively counteracted, and the stability and the accuracy of the circuit are improved.

The invention discloses a detection and protection circuit system of an amplifier, which is characterized in that a protection circuit system consisting of an over-temperature protection circuit (OTP), an over-current protection circuit (OCP), an over-voltage protection circuit (OVP), an electromagnetic interference (EMI) protection circuit and an ESD protection circuit is used, and a band-gap reference circuit BG and the over-temperature protection circuit are connected in series to form a whole which is connected in parallel with a core of the amplifier; meanwhile, the overcurrent protection circuit is connected to the output end of the amplifier in parallel, the overvoltage protection circuit is connected with the electromagnetic interference protection circuit in series and arranged at the input end of the amplifier, and the ESD protection circuit is connected with the power port in series. The over-temperature protection circuit mainly aims at an output heat source power tube and an input heat source differential pair. The over-current protection is to protect the output power tube, and if the over-temperature protection is triggered, the FLAG outputs an over-temperature protection signal. And the ESD protection is used for protecting electrostatic discharge of IO and POWER ports.

The invention relates to the technical field of memories, and particularly provides an ROM (Read Only Memory), a data reading method thereof and electronic equipment, and the ROM comprises a storage circuit, a reference circuit and a comparison circuit, the storage circuit comprises a multiplexer and a storage array; the reference load of the reference circuit is larger than the minimum load and smaller than the maximum load of the read bit line, the voltage-time change slope of the reference voltage generated during reading is smaller than the slope when the memory unit reads 0 and larger than the slope when the memory unit reads 1, and the read bit line is a bit line corresponding to the multiplexer; the comparison circuit compares a reference voltage with a read voltage to determine to output a read digital signal, and the read voltage is an output voltage of a read memory cell. The problem that a large-capacity ROM read-only memory is low in reading speed and prone to misreading due to the fact that the load is high in the prior art is solved.

The utility model belongs to the technical field of test equipment, and discloses portable alternating current charging pile test equipment, which comprises an alternating current charging pile tester, and a charging gun socket, a test circuit board and a load resistor are arranged on one side in the alternating current charging pile tester. The test circuit board comprises an AD sampling circuit and an ARM processor electrically connected with the AD sampling circuit. The AD sampling circuit is composed of a clamp voltage circuit, a measurement reference circuit, an LN voltage sampling circuit, an LN current sampling circuit, a CP voltage sampling circuit, a PWM waveform sampling circuit, a CC resistance sampling circuit, an AD data acquisition circuit and a test process control circuit. According to the utility model, all functions of testing the alternating current charging pile can be integrated on one testing device, the functions are comprehensive, the device is convenient to carry, and the device can be used for testing on a factory production line, can also be carried about, and is used for testing the charging pile on a charging pile working site.

Systems and methods for providing multiple stable reference voltages are disclosed. In one aspect, a bandgap reference circuit generates a first reference voltage, which is calibrated with an adjustable resistor bank. Settings for this adjustable resistor bank may be stored in a memory and reused at multiple locations with theoretically identical resistor banks for other circuits requiring reference voltages. Recognizing that there may be voltage network variations induced by distances from bandgap reference circuit, process variations between resistor banks, or the like, each resistor bank may be separately calibrated, and settings stored in memory. By providing separate resistor banks for each location that needs a reference voltage, the need for duplicative and space intensive bandgap reference circuits is minimized. Further, by providing separate resistor banks, variations in the local voltage are minimized providing more stable and reliable operation of circuits in the die.

The invention provides a band-gap reference circuit, a current compensation method and a reference power supply. The band-gap reference circuit comprises a first triode module, a second triode module, a first resistor module, a second resistor module, a first compensation branch and a second compensation branch, the first compensation branch generates first compensation current, and the first compensation current compensates first current flowing into a third end of the first triode module from a first end of the first triode module. The first compensation current is equal to the first current. The second compensation branch generates second compensation current, the second compensation current compensates second current flowing into the third end of the second triode module from the first end of the second triode module, and the second compensation current is equal to the second current. The problems that the precision of the reference voltage output by the band-gap reference circuit is reduced, the temperature drift is increased, and the stability and reliability of the reference voltage are seriously influenced due to the fact that an existing band-gap reference circuit cannot guarantee accurate matching of collector currents of two branches of BJTs are solved.