263 results about "Reference circuit" patented technology

The invention discloses an ultrahigh-precision low-noise band-gap reference circuit, and relates to the technical field of integrated circuit design, the ultrahigh-precision low-noise band-gap reference circuit comprises a starting turn-off circuit, a reference core circuit, a high-order temperature compensation circuit and a digital trimming circuit, the starting turn-off circuit is connected with the reference core circuit, and the high-order temperature compensation circuit is connected with the digital trimming circuit through a Brokaw type band-gap reference topological structure. Accurate compensation of the voltage is achieved through deep negative feedback of the operational amplifier and a high-order temperature compensation circuit, and the temperature drift of the reference voltage is as low as 0.5-2 ppm / DEG C (-40 DEG C to 130 DEG C) and is increased by 5-10 times compared with a traditional band-gap reference (5-10 ppm / DEG C). The power consumption of the system can be saved by turning off the circuit when the circuit is not used, meanwhile, the digital trimming module is added to replace laser trimming in traditional engineering, the upper limit of the trimming range is improved, high-order temperature compensation and the digital trimming circuit are introduced, the precision of output voltage is improved, different devices are replaced, and the noise of the circuit is reduced. The problems that a traditional high-voltage band-gap reference temperature coefficient is high and noise is large are solved.

The invention discloses a high-power-supply-rejection-ratio band-gap reference circuit with base current correction and high-order temperature compensation, which comprises a pre-voltage-stabilizing circuit module used for generating and outputting internal power supply voltage according to external power supply voltage, the internal power supply voltage is supplied to the band-gap reference core circuit module so as to isolate transmission of power supply noise to reference output; the high-order temperature compensation circuit module is used for generating nonlinear compensation current according to the bias voltage; the band-gap reference core circuit module is used for generating current in direct proportion to absolute temperature, reference voltage and reference output voltage based on internal power supply voltage and feeding back the reference voltage to the pre-voltage-stabilizing circuit module to serve as bias reference; and the base current correction circuit module is used for sampling the base current of the bipolar transistor in the band-gap reference core circuit module. On the premise that the circuit structure and the power consumption are reasonable, the temperature drift of the reference voltage is reduced, and the power supply suppression capability is improved.

The invention discloses a band-gap reference circuit, a working method thereof and electronic equipment, and relates to the technical field of band-gap reference circuits. The circuit comprises a pre-voltage-stabilizing module; the starting module is electrically connected with the pre-voltage-stabilizing module; the band gap core module is electrically connected with the starting module; the operational amplifier module is electrically connected with the band gap core module and the pre-voltage-stabilizing module; wherein the band-gap core module is used for outputting a reference voltage source; the pre-voltage-stabilizing module is used for buffering power supply voltage to obtain working voltage and providing the working voltage for the starting module and the operational amplifier module, and the pre-voltage-stabilizing module is further used for feeding back the influence of fluctuation of the power supply voltage on the reference voltage source to the pre-voltage-stabilizing module for readjustment; the starting module is used for starting the band gap core module; and the operational amplifier module is used for performing negative feedback regulation on the reference voltage source. The circuit can provide a reference voltage source with high PSRR and low temperature drift.

The invention discloses a band-gap reference circuit and a calibration method, and the circuit comprises a reference core module which is used for outputting a band-gap reference voltage with first-order temperature compensation; the high-order compensation module is used for generating linear voltage in positive correlation with temperature, comparing the linear voltage with a plurality of reference voltages, generating high-order compensation current according to a comparison result, and compensating the band-gap reference voltage according to the high-order compensation current so as to generate reference output voltage with a zero temperature coefficient; and the reference signal generation module is used for outputting the plurality of reference voltages to the high-order compensation module according to the reference output voltage. According to the band-gap reference circuit provided by the embodiment of the invention, the high-order component in the band-gap reference voltage can be accurately quantified, so that the corresponding compensation current can be quantitatively generated to compensate the high-order temperature coefficient in the band-gap reference voltage, the influence of the temperature on the reference output voltage is effectively counteracted, and the stability and the accuracy of the circuit are improved.

Systems and methods for providing multiple stable reference voltages are disclosed. In one aspect, a bandgap reference circuit generates a first reference voltage, which is calibrated with an adjustable resistor bank. Settings for this adjustable resistor bank may be stored in a memory and reused at multiple locations with theoretically identical resistor banks for other circuits requiring reference voltages. Recognizing that there may be voltage network variations induced by distances from bandgap reference circuit, process variations between resistor banks, or the like, each resistor bank may be separately calibrated, and settings stored in memory. By providing separate resistor banks for each location that needs a reference voltage, the need for duplicative and space intensive bandgap reference circuits is minimized. Further, by providing separate resistor banks, variations in the local voltage are minimized providing more stable and reliable operation of circuits in the die.

The invention provides a band-gap reference circuit, a current compensation method and a reference power supply. The band-gap reference circuit comprises a first triode module, a second triode module, a first resistor module, a second resistor module, a first compensation branch and a second compensation branch, the first compensation branch generates first compensation current, and the first compensation current compensates first current flowing into a third end of the first triode module from a first end of the first triode module. The first compensation current is equal to the first current. The second compensation branch generates second compensation current, the second compensation current compensates second current flowing into the third end of the second triode module from the first end of the second triode module, and the second compensation current is equal to the second current. The problems that the precision of the reference voltage output by the band-gap reference circuit is reduced, the temperature drift is increased, and the stability and reliability of the reference voltage are seriously influenced due to the fact that an existing band-gap reference circuit cannot guarantee accurate matching of collector currents of two branches of BJTs are solved.

The low-temperature drift high-power noise suppression band gap reference circuit disclosed by the application comprises a starting circuit, a pre-stabilization circuit, a curvature compensation circuit, a core band gap reference circuit and a low-pass filter circuit, the starting circuit is used for power-on starting of the pre-stabilization circuit and the core band gap reference circuit, the pre-stabilization circuit is used for filtering a part of power ripples in advance and supplying power for the core band gap reference circuit, the curvature compensation circuit and the low-pass filter circuit, the curvature compensation circuit is used for injecting and extracting exponential currents respectively in the high-temperature section and the low-temperature section to complete temperature curvature compensation in different temperature sections, and the low-pass filter circuit is used for completing power ripple suppression in the high-frequency section. The low-temperature drift high-power noise suppression band gap reference circuit realizes high-order curvature compensation in a wide temperature range of high and low temperatures, so that the temperature drift is effectively reduced in the whole temperature range, thereby reducing the power consumption of the circuit and significantly improving the precision of the voltage reference. And the PSR of the circuit is greatly improved.

The application discloses a positive and negative voltage source driving circuit, which is used for providing stable and accurate positive and negative voltage for a load circuit, saving chip area and energy consumption during work. The circuit comprises a band gap reference circuit, which is used for providing a positive reference voltage +VREF and working between a positive voltage VSP and a ground potential GND; a reference voltage generating circuit, which is used for receiving the positive reference voltage +VREF and outputting a positive voltage reference VREF_VGMP to a positive voltage operational amplifier and a negative voltage reference VREF_VGMN to a negative voltage operational amplifier; and the positive voltage operational amplifier and the negative voltage operational amplifier, which are used for outputting a positive voltage and a negative voltage to the load circuit respectively.

The invention relates to the technical field of circuits, in particular to a wide-voltage power supply band-gap reference source circuit, a ferroelectric memory and a circuit control method.The circuit comprises a voltage stabilizing circuit, a starting circuit, a control circuit, a temperature compensation circuit and an amplifying circuit, and the voltage stabilizing circuit conducts voltage stabilizing adjustment on a received voltage signal to obtain a voltage stabilizing signal; the starting circuit is used for generating an activation signal according to the voltage-stabilizing signal; the control circuit is respectively connected with the voltage stabilizing circuit and the starting circuit to generate a reference control signal; the temperature compensation circuit obtains a temperature compensation signal according to the reference control signal; and the amplifying circuit is respectively connected with the other circuit points to generate a final reference circuit signal, so that the problem that the performance of the ferroelectric memory is reduced due to the fact that the suppression capability of the circuit on external power supply noise and ripple waves is reduced under the condition that the external power supply voltage is relatively wide and relatively high in the prior art is solved, and the overall performance of the ferroelectric memory is improved.

The application belongs to the technical field of electronic circuits, and particularly relates to a low-temperature-drift high-PSRR op-amp-free bandgap reference circuit, which comprises MOS tubes M1, M2, M3, M4, M5, M6, M7, M8, M9, M10, M11, M12, M13, M14, M15, triodes Q1, Q2, Q3, resistors R1, R2 and R3; compared with the prior art, the circuit is an op-amp-free bandgap reference circuit, which avoids the influence of op-amp offset voltage on reference voltage and improves the accuracy of the reference voltage; the temperature coefficient of the reference voltage can be well adjusted by adjusting the resistance coefficient, so that the low-temperature-drift reference voltage is realized.

The invention belongs to the field of integrated circuits, and particularly relates to a curvature compensation band-gap reference circuit which comprises a starting circuit, a first-order band-gap reference circuit and a high and low temperature compensation circuit, and the starting circuit is connected with a bias current end of the first-order band-gap reference circuit; and a positive temperature current branch and a negative temperature current branch of the first-order band-gap reference circuit are connected with two MOS (Metal Oxide Semiconductor) tubes working in a sub-threshold region of the high and low temperature compensation circuit. On the basis of a traditional band-gap reference circuit, a high-temperature region compensation circuit and a low-temperature region compensation circuit are designed respectively by utilizing the current characteristic of a sub-threshold region of an MOS (Metal Oxide Semiconductor) tube, so that the temperature drift characteristic is improved within the temperature range of 40-125 DEG C; therefore, the reference source provided by the invention has the characteristic of low temperature drift, and is suitable for providing bias for precise high-performance systems such as AD / DA, LDO, PLL and the like.

The invention provides a three-dimensional stacked packaging substrate device and a manufacturing method, and relates to the technical field of semiconductor packaging, and the three-dimensional stacked packaging substrate device comprises a substrate which is a multi-layer stacked substrate; a drop point area corresponding to the vertical interconnection terminal is provided with a backflow channel, and the backflow channel comprises a grounding via hole array or a grounding metal ring surrounding the drop point area and is used for providing a continuous reference loop for a high-speed signal transmitted through the vertical interconnection terminal. Providing a core plate, carrying out multi-layer lamination, and manufacturing a backflow channel in a corresponding vertical interconnection terminal drop point area; manufacturing blind holes or micro holes in the substrate to realize interlayer interconnection; the substrate is divided into a high-speed digital area, an analog / radio frequency area and a power supply area according to functions for partition wiring, and the ground plane of each partition is kept continuous; a decoupling device is arranged at the near end of the vertical interconnection drop point or the chip power supply inlet. The system has the beneficial effects that low reflection, low jitter and low bit error rate of high-speed signal transmission are realized, and the electromagnetic compatibility and the working reliability of the system are improved.

A fault injection evaluation method and system, and a computer program product and a medium. The fault injection evaluation method comprises: configuring a target number of cycles for a circuit under test (101), wherein the target number of cycles is the number of cycles during which said circuit operates after being reset; injecting a fault into said circuit (102); outputting a reset signal to said circuit, and acquiring a fault output result that is output by said circuit after the fault is injected (103); and on the basis of the fault output result and a reference output result, performing a comparison to acquire a fault evaluation result (104). By means of the method, it is not necessary to additionally provide a reference circuit, so that the structural complexity of the fault injection evaluation system can be reduced, and the consumption of resources required during evaluation can be reduced.

The application provides a low-power bandgap reference circuit, a chip and a reference voltage generation method, and solves the problems of high power consumption and the need to use an operational amplifier and a resistor in the prior art bandgap reference, and comprises the following components connected in series: a positive temperature coefficient module comprising a first transistor, a second transistor and a first MOS tube, a difference between base-emitter voltages of the first transistor and the second transistor generating a positive temperature coefficient voltage on the first MOS tube; a clamping module comprising a first clamping MOS tube and a second clamping MOS tube, the clamping module being used to provide equal first clamping voltage and second clamping voltage; a negative temperature coefficient module comprising a first MOS tube and a second MOS tube, threshold voltages of the first MOS tube and the second MOS tube serving as a negative temperature coefficient voltage; a current mirror module proportionally copying a current of a branch in which the first transistor is located to a branch in which the negative temperature coefficient module is located and a branch in which the second transistor is located, and the negative temperature coefficient voltage and the positive temperature coefficient voltage being added together to serve as a reference voltage.

The application discloses a memory data reading stability method and device, which comprises the following steps: after determining a reference trimming module, adjusting the equivalent resistance value of the reference trimming module to the optimal resistance value obtained in advance, connecting the second output end of a sensitive amplifier connected with the reference trimming module with a trimming module to be adjusted, and adjusting the trimming module to be adjusted according to the output signal of the sensitive amplifier, so that the total resistance values of each reference circuit and the first trimming module connected with each reference circuit in series are equal, the size of the reading window is increased, the stability of the read data is improved, and the sensitive amplifier in the memory is multiplexed.

A circuit (70) includes a voltage reference circuit (72) that includes an output terminal (74), wherein the voltage reference circuit (72) is configured to generate an output voltage at the output terminal (74) having a first transfer function of voltage with respect to strain. The circuit (70) also includes a strain compensation circuit (78) having an input terminal connected to the output terminal (74) of the voltage reference circuit, and having a strain compensation circuit output terminal (80). The strain compensation circuit (78) is configured to receive the output voltage comprising the first transfer function at the input terminal. The strain compensation circuit (78) has a second transfer function of voltage with respect to strain that is substantially opposite that of the first transfer function, thereby outputting a compensated voltage at the strain compensation circuit output terminal (80) that is substantially independent of strain.

The invention discloses a reference voltage source circuit and an electronic device. The circuit comprises a pre-voltage-stabilizing module, a starting module and a band-gap reference module. The pre-voltage-stabilizing module is used for carrying out pre-voltage-stabilizing processing on the input voltage. The starting module provides starting current based on the pre-stabilized voltage output by the pre-stabilized voltage module. And the band-gap reference module is used for receiving the pre-stabilized voltage, establishing working bias according to the starting current and outputting a plurality of reference voltages with different voltage values. The Brokaw band-gap reference circuit solves the problems that a traditional Brokaw band-gap reference circuit is single in output voltage and the design complexity is increased due to the fact that an operational amplifier is used.

The invention provides an anti-electromagnetic interference band-gap reference voltage reference circuit and a construction method thereof. The anti-electromagnetic interference band-gap reference voltage reference circuit comprises a biasing circuit, a starting circuit, a double differential pair amplifier and a band-gap reference circuit, the biasing circuit is used for providing a working environment for an electronic device, and the biasing circuit does not depend on a power supply, so that the power consumption is reduced while the sensitivity of electromagnetic interference is reduced; the starting circuit is used for providing initial conditions when the reference circuit starts to operate; the double differential pair amplifier is used for amplifying the reference voltage and inhibiting direct current offset; the band-gap reference circuit is used for generating stable reference voltage so as to reduce the electromagnetic interference sensitivity of the reference circuit and keep a low temperature coefficient; therefore, the anti-electromagnetic interference capability of the circuit is improved.

This invention discloses a bandgap reference circuit structure, belonging to the field of integrated circuit design technology. The circuit structure includes a bandgap reference core circuit, a chopper-equipped operational amplifier (op-amp), a bandgap reference startup circuit, a temperature-to-absolute-temperature (PTAT) bias current source, and a current source startup circuit. By optimizing the bandgap reference core circuit architecture, combining chopper technology to eliminate the effects of offset voltage and device mismatch, and with the matching startup circuit and low-voltage-adaptive bias current source, the reference voltage is essentially independent of the op-amp input offset voltage, improving circuit symmetry performance and load dynamic response speed. Furthermore, in most common complementary metal-oxide-semiconductor (CMOS) processes, it only requires a power supply voltage of 2V or higher to operate stably, significantly improving the accuracy and stability of the reference voltage.

The present disclosure relates to a bandgap reference circuit, a clock signal generator, and a power circuit. A bandgap reference circuit includes a plurality of current sources having different temperature coefficients, a first trimmer, and a mixer. The first trimmer adjusts amounts of a plurality of currents individually output from each of the plurality of current sources to be equal to each other. The mixer adjusts an aggregation ratio and combines the plurality of currents based on the aggregation ratio.

Before a temperature characteristic of a band gap reference circuit is tested, temperature dependencies of a reference voltage and an absolute temperature proportional voltage for a plurality of samples are measured. When the temperature characteristic is tested, based on a difference ΔVref between the reference voltage of the band gap reference circuit at a predetermined temperature and a median value of the reference voltages of the plurality of samples, a difference ΔVptat between the absolute temperature proportional voltage of the band gap reference circuit at a predetermined temperature and a median value of the absolute temperature proportional voltages of the plurality of samples is calculated.

The objective is to provide a semiconductor circuit and determination method that can easily determine the region in which the reference voltage is stable. [Solution] The semiconductor circuit of the embodiment includes a bandgap reference circuit section that generates a reference voltage and a detection circuit section. The bandgap reference circuit section includes a control transistor positioned between a wiring to which a first power supply voltage is applied and a reference voltage wiring, and a control circuit section that applies a drive voltage to the control transistor so that the reference voltage becomes a first predetermined value. The control transistor has a first terminal connected to the wiring to which the first power supply voltage is applied, a second terminal connected to the reference voltage wiring, and a drive terminal. The control transistor turns ON when the voltage of the drive terminal, with the voltage of the first terminal as a reference, is a negative value and below a threshold. The detection circuit section includes a first determination circuit section that outputs a signal indicating whether or not the reference voltage is stable at the first predetermined value based on the drive voltage output from the control circuit section.

The invention relates to the technical field of integrated circuit design, in particular to a current bias circuit for high-precision current calibration and a control method, and the circuit comprises a band-gap reference circuit, a current calibration circuit, a current detection circuit and a first bias unit; the band-gap reference circuit is used for outputting reference current; the bias unit receives the reference current and outputs a bias voltage to the current calibration circuit; the current calibration circuit is used for calibrating an input current through the Trim circuit and outputting a calibrated current; and the current detection circuit receives the calibrated current and outputs an indication signal. According to the invention, the current calibration circuit is introduced, so that accurate voltage value and current value output can be realized no matter how a process corner changes.

The application discloses a band gap reference circuit and electronic equipment. The band gap reference circuit comprises a reference voltage generating module, an operational amplifier and a current biasing module. The operational amplifier is connected with the reference voltage generating module. The operational amplifier makes the reference voltage generating module generate a band gap reference voltage by clamping voltages of an inverting input end and a non-inverting input end of the operational amplifier. The current biasing module is used for generating a biasing current required by the operational amplifier to work according to a first biasing voltage and a sleep mode signal, so that the band gap reference circuit is quickly switched from a sleep mode to a working mode, and the start-up time of the band gap reference circuit is shortened.

The utility model discloses a kind of under-voltage latching circuits with recovery time, including power supply voltage detection module and recovery time generation module;Power supply voltage detection module is composed of sampling circuit and first comparator circuit, and recovery time generation module is composed of charge pump circuit and second comparator circuit;The under-voltage latching circuit with recovery time further includes band gap reference circuit and logic circuit.The utility model can realize accurate recovery time.Through logic circuit, the voltage of first comparator and second comparator output is calculated, can avoid under-voltage latching during power-on process of power supply to generate false inversion signal.In addition, as the case shown in the preceding figure 3, recovery time generation module can effectively avoid the situation of power fluctuation, and more effectively protect the circuit.Recovery time can be adjusted by increasing charging current control circuit.Low cost, easy to design, easy to copy, smaller layout area, low cost.

The invention provides a schematic circuit diagram comparison method and device, electronic equipment and a storage medium, and relates to the technical field of circuit design, and the method comprises the steps: converting a conventional schematic circuit diagram comparison idea, converting circuit elements into graph units, and determining a boundary region of the comparison circuit elements by comparing the shape description information of the graph units, a reference circuit schematic diagram is obtained, a target reference graph unit is determined in a boundary area in the reference circuit schematic diagram, difference information corresponding to reference circuit elements is determined by comparing a contrast graph unit with the target reference graph unit, the difference information is overlaid on the reference circuit schematic diagram for visual display, and the comparison process is completed in a number-form combination mode. The difference information can be visually displayed, the comparison efficiency and accuracy of the schematic circuit diagram are improved, the user experience is improved, a user can rapidly master the difference information of the reference schematic circuit diagram and the contrast schematic circuit diagram, and then the design quality and development efficiency of the user are improved.

The invention is suitable for the technical field of communication, and particularly relates to a power amplification circuit and a radio frequency chip. The power amplification circuit comprises a power supply, a control circuit, a biasing circuit, a reference circuit, a linear voltage stabilizing circuit, a first MOS tube, a voltage division circuit and an overvoltage protection circuit. The grid electrode of the first MOS tube is used for being connected with control voltage, the source electrode of the first MOS tube is used for being connected with a power supply, and the drain electrode of the first MOS tube is connected with the input end of the control circuit and the output end of the linear voltage stabilizing circuit; the first MOS tube is used for carrying out voltage division on a power supply; the input end of the voltage division circuit is connected with the power supply, the output end of the voltage division circuit is connected with the drain electrode of the first MOS tube, and the voltage division circuit is used for carrying out voltage division on the power supply. Compared with the prior art, the breakdown voltage of the power amplification circuit can be remarkably improved, the area is smaller, and miniaturization development is facilitated.

A classification device for classifying an electric input signal may include: an input node to receive the electric input signal; a reference circuit configured to generate an electric reference signal; a memristive structure configured to cause an electric response signal as a function of both the electric input signal received at the input node and the electric reference signal generated by the reference circuit; an electric analysis circuit coupled to the memristive structure to determine one or more characteristics of the electric response signal caused by the memristive structure; and one or more processors configured to determine a class associated with the electric input signal based on the one or more characteristics of the electric response signal determined by the electric analysis circuit.