465 results about "Reference circuit" patented technology

The invention relates to the technical field of integrated circuits, in particular to a band-gap reference voltage source, which comprises a high-order compensation circuit, a low-order compensation circuit, a low-order compensation circuit, a low-order compensation circuit and a low-order reference circuit, the band-gap reference circuit is used for generating a positive temperature coefficient voltage and a negative temperature coefficient voltage, performing first-order temperature compensation on the negative temperature coefficient voltage by using the positive temperature coefficient voltage, performing high-order curvature compensation on the negative temperature coefficient voltage based on the target compensation current, determining the compensated voltage as a reference voltage and outputting the reference voltage; according to the band-gap reference voltage source, high-order compensation is introduced through the sub-threshold MOS tube, the negative temperature coefficient voltage can be well reduced, the reference voltage with the temperature coefficient approximate to zero is obtained, and practicability is high.

The invention discloses an ultrahigh-precision low-noise band-gap reference circuit, and relates to the technical field of integrated circuit design, the ultrahigh-precision low-noise band-gap reference circuit comprises a starting turn-off circuit, a reference core circuit, a high-order temperature compensation circuit and a digital trimming circuit, the starting turn-off circuit is connected with the reference core circuit, and the high-order temperature compensation circuit is connected with the digital trimming circuit through a Brokaw type band-gap reference topological structure. Accurate compensation of the voltage is achieved through deep negative feedback of the operational amplifier and a high-order temperature compensation circuit, and the temperature drift of the reference voltage is as low as 0.5-2 ppm / DEG C (-40 DEG C to 130 DEG C) and is increased by 5-10 times compared with a traditional band-gap reference (5-10 ppm / DEG C). The power consumption of the system can be saved by turning off the circuit when the circuit is not used, meanwhile, the digital trimming module is added to replace laser trimming in traditional engineering, the upper limit of the trimming range is improved, high-order temperature compensation and the digital trimming circuit are introduced, the precision of output voltage is improved, different devices are replaced, and the noise of the circuit is reduced. The problems that a traditional high-voltage band-gap reference temperature coefficient is high and noise is large are solved.

The application relates to a high-order curvature compensation band gap reference circuit, which comprises a first-order band gap reference circuit, a high-temperature region curvature compensation circuit and a starting circuit. The first-order band gap reference voltage is realized by the following technologies: the voltage generated by the current of PMOS tube M4 on resistors R3-R4 and the voltage generated by the current of PMOS tube M6 on resistor R4 both have positive temperature coefficients, the voltage generated by the current of PMOS tube M5 on resistors R3-R4 and the voltage generated by the current of PMOS tube M7 on resistor R4 both have negative temperature coefficients; the working area of NMOS tube M13 gradually changes from the deep triode region, the triode region to the saturation region with the increase of temperature by controlling the working of NMOS tube M13 by the technology that the gate voltage of NMOS tube M12 increases with the increase of temperature, so that the current of PMOS tube M14 is high-order nonlinear with temperature, and the first-order band gap reference voltage is temperature compensated, thereby obtaining the high-order temperature compensation band gap voltage.

The invention discloses a circuit and a method for realizing current sharing through master-slave parallel connection, and the method is characterized in that a master machine and a plurality of slave machines are connected in parallel, and are respectively connected to a current sharing control bus through an isolation chip, a TTL and differential mutual conversion unit and an information gating switch in sequence, thereby forming a parallel current sharing circuit; comprising a host issuing current reference circuit and a processing circuit after a slave receives a current reference signal from the host. After a plurality of instrument power supplies are connected in parallel, a user sets a master-slave parallel mode on a front panel of the power supplies and selects a master computer, and other computers are slave computers; when a plurality of power supplies work in parallel, the host issues a current reference signal to the current sharing control bus through the current reference generation circuit, and the slave outputs a corresponding current value according to the current reference signal issued by the host. One of a plurality of power supply modules can be randomly selected as a main module, the flexibility is high, the stability is good, and the power supply has the characteristics of simplicity in wiring and control, low transmission loss of control signals, difficulty in interference of the control signals, balanced output control of all the power supply modules and the like.

The invention provides a band-gap reference circuit and a method for improving the temperature coefficient of the band-gap reference circuit. The band-gap reference circuit comprises a core circuit, a load and bias circuit, a dual temperature curvature compensation structure and an output circuit. Collector electrodes of the first bipolar transistor, the second bipolar transistor and the third bipolar transistor are grounded. The dual temperature curvature compensation structure comprises a resistance network used for forming a first compensation path and a second compensation path; the first compensation path is configured to generate a first compensation current using temperature characteristics of the second and third bipolar transistors. The second compensation path is configured to generate a second compensation current using temperature characteristics of the first and third bipolar transistors. According to the invention, a dual temperature curvature compensation structure is arranged, two different compensation currents are generated in parallel, different non-linear sources are corrected respectively, and finally, the accurate compensation of the overall temperature coefficient is realized through linear superposition, so that the temperature curvature can be effectively inhibited.

The invention discloses a high-power-supply-rejection-ratio band-gap reference circuit with base current correction and high-order temperature compensation, which comprises a pre-voltage-stabilizing circuit module used for generating and outputting internal power supply voltage according to external power supply voltage, the internal power supply voltage is supplied to the band-gap reference core circuit module so as to isolate transmission of power supply noise to reference output; the high-order temperature compensation circuit module is used for generating nonlinear compensation current according to the bias voltage; the band-gap reference core circuit module is used for generating current in direct proportion to absolute temperature, reference voltage and reference output voltage based on internal power supply voltage and feeding back the reference voltage to the pre-voltage-stabilizing circuit module to serve as bias reference; and the base current correction circuit module is used for sampling the base current of the bipolar transistor in the band-gap reference core circuit module. On the premise that the circuit structure and the power consumption are reasonable, the temperature drift of the reference voltage is reduced, and the power supply suppression capability is improved.

The invention discloses a band-gap reference circuit, a working method thereof and electronic equipment, and relates to the technical field of band-gap reference circuits. The circuit comprises a pre-voltage-stabilizing module; the starting module is electrically connected with the pre-voltage-stabilizing module; the band gap core module is electrically connected with the starting module; the operational amplifier module is electrically connected with the band gap core module and the pre-voltage-stabilizing module; wherein the band-gap core module is used for outputting a reference voltage source; the pre-voltage-stabilizing module is used for buffering power supply voltage to obtain working voltage and providing the working voltage for the starting module and the operational amplifier module, and the pre-voltage-stabilizing module is further used for feeding back the influence of fluctuation of the power supply voltage on the reference voltage source to the pre-voltage-stabilizing module for readjustment; the starting module is used for starting the band gap core module; and the operational amplifier module is used for performing negative feedback regulation on the reference voltage source. The circuit can provide a reference voltage source with high PSRR and low temperature drift.

The invention provides a band-gap reference circuit without an operational amplifier, and the circuit comprises a positive temperature coefficient generation module which generates negative feedback current with a positive temperature coefficient through a cross coupling structure composed of four transistors; the reference voltage generation module copies the output of the positive temperature coefficient generation module through a mirror image so as to generate a positive temperature coefficient voltage on an internal resistor and superposes a negative temperature coefficient voltage so as to obtain a band-gap reference voltage with a zero temperature coefficient; the starting module is connected with the output of the positive temperature coefficient generation module and injects current into the reference voltage generation module at the initial stage of establishing the band-gap reference voltage; and the current output module copies the output of the positive temperature coefficient generation module through a mirror image so as to generate zero temperature coefficient output current. An operational amplifier does not need to be introduced, so that extra device noise is not introduced, and the circuit can be widely applied to circuits sensitive to noise, such as phase-locked loops and oscillators.

The present disclosure relates to an integrated circuit for generating an intermediate supply voltage which is immune to glitches on power supply voltage. An example integrated circuit comprises a Band Gap Reference (BGR) circuit configured to generate a reference voltage immune to glitches on a power supply. The integrated circuit also comprises a Low Dropout (LDO) circuit which gets the reference voltage from the BGR circuit. The LDO circuit is configured to generate a glitch immune intermediate supply voltage based on the reference voltage and the power supply which is prone to glitch.

The invention provides a band-gap reference circuit and a chip, and the circuit comprises a voltage generation module which is used for generating a first voltage with a positive temperature coefficient and a second voltage with a negative temperature coefficient, and generating a reference voltage with a zero temperature coefficient according to the first voltage and the second voltage; and the load driving module is used for providing load driving capability for the voltage generation module so as to carry out driving buffering on a post-stage circuit. The whole circuit does not contain an operational amplifier clamp and can provide reference voltage with a zero temperature coefficient, so that the power consumption of the band-gap reference circuit is effectively reduced; meanwhile, the load driving module provides load driving capacity for the voltage generation module, so that the output reference voltage has the load driving capacity, and the problems that an existing band-gap reference circuit is high in power consumption and does not have the load driving capacity are solved.

An error sampling and decoding system is disclosed. The system includes a reference circuit configured to generate first and second reference values; a comparator configured to receive a first error symbol, and to generate serial error data representing the first error symbol based on successive comparisons of the first error symbol with the first and second reference values; and a deserializer circuit configured to generate parallel data corresponding with the first error symbol based on the serial error data.

The invention relates to the technical field of analog integrated circuit design, and particularly discloses a segmented temperature compensation band-gap reference circuit capable of trimming low temperature drift, which comprises a starting circuit, a first-order temperature compensation voltage circuit, a first-order temperature compensation current circuit and a segmented temperature compensation voltage circuit, the starting circuit is used for filling a target current into the first-order temperature compensation voltage circuit during power-on, so that the first-order temperature compensation voltage circuit is separated from a degeneracy point; the first-order temperature compensation voltage circuit is used for providing band-gap reference voltage and providing bias current for the first-order temperature compensation current circuit and the segmented temperature compensation voltage circuit. The first-order temperature compensation current circuit is used for providing reference current and providing bias current for the segmented temperature compensation voltage circuit; and the segmented temperature compensation voltage circuit is used for superposing the generated compensation voltage onto the band-gap reference voltage so as to further reduce the temperature coefficient of the band-gap reference voltage. The temperature drift of the band-gap reference voltage can be reduced.

The invention discloses a band-gap reference circuit and a calibration method, and the circuit comprises a reference core module which is used for outputting a band-gap reference voltage with first-order temperature compensation; the high-order compensation module is used for generating linear voltage in positive correlation with temperature, comparing the linear voltage with a plurality of reference voltages, generating high-order compensation current according to a comparison result, and compensating the band-gap reference voltage according to the high-order compensation current so as to generate reference output voltage with a zero temperature coefficient; and the reference signal generation module is used for outputting the plurality of reference voltages to the high-order compensation module according to the reference output voltage. According to the band-gap reference circuit provided by the embodiment of the invention, the high-order component in the band-gap reference voltage can be accurately quantified, so that the corresponding compensation current can be quantitatively generated to compensate the high-order temperature coefficient in the band-gap reference voltage, the influence of the temperature on the reference output voltage is effectively counteracted, and the stability and the accuracy of the circuit are improved.

The invention discloses a detection and protection circuit system of an amplifier, which is characterized in that a protection circuit system consisting of an over-temperature protection circuit (OTP), an over-current protection circuit (OCP), an over-voltage protection circuit (OVP), an electromagnetic interference (EMI) protection circuit and an ESD protection circuit is used, and a band-gap reference circuit BG and the over-temperature protection circuit are connected in series to form a whole which is connected in parallel with a core of the amplifier; meanwhile, the overcurrent protection circuit is connected to the output end of the amplifier in parallel, the overvoltage protection circuit is connected with the electromagnetic interference protection circuit in series and arranged at the input end of the amplifier, and the ESD protection circuit is connected with the power port in series. The over-temperature protection circuit mainly aims at an output heat source power tube and an input heat source differential pair. The over-current protection is to protect the output power tube, and if the over-temperature protection is triggered, the FLAG outputs an over-temperature protection signal. And the ESD protection is used for protecting electrostatic discharge of IO and POWER ports.

Systems and methods for providing multiple stable reference voltages are disclosed. In one aspect, a bandgap reference circuit generates a first reference voltage, which is calibrated with an adjustable resistor bank. Settings for this adjustable resistor bank may be stored in a memory and reused at multiple locations with theoretically identical resistor banks for other circuits requiring reference voltages. Recognizing that there may be voltage network variations induced by distances from bandgap reference circuit, process variations between resistor banks, or the like, each resistor bank may be separately calibrated, and settings stored in memory. By providing separate resistor banks for each location that needs a reference voltage, the need for duplicative and space intensive bandgap reference circuits is minimized. Further, by providing separate resistor banks, variations in the local voltage are minimized providing more stable and reliable operation of circuits in the die.

The invention provides a band-gap reference circuit, a current compensation method and a reference power supply. The band-gap reference circuit comprises a first triode module, a second triode module, a first resistor module, a second resistor module, a first compensation branch and a second compensation branch, the first compensation branch generates first compensation current, and the first compensation current compensates first current flowing into a third end of the first triode module from a first end of the first triode module. The first compensation current is equal to the first current. The second compensation branch generates second compensation current, the second compensation current compensates second current flowing into the third end of the second triode module from the first end of the second triode module, and the second compensation current is equal to the second current. The problems that the precision of the reference voltage output by the band-gap reference circuit is reduced, the temperature drift is increased, and the stability and reliability of the reference voltage are seriously influenced due to the fact that an existing band-gap reference circuit cannot guarantee accurate matching of collector currents of two branches of BJTs are solved.

Sub-pixel circuits, display panels, and display devices are disclosed. A sub-pixel circuit for operating a sub-pixel of a display panel can include a light emitting circuit including a light emitting element that receives a high potential voltage, the light emitting circuit configured to control the light emitting element according to a driving voltage and output a control voltage; a reference circuit configured to receive the control voltage and a low potential voltage, and control a driving current flowing through the light emitting element; an amplification circuit configured to compare the control voltage with a data voltage to generate the driving voltage for controlling the light emitting circuit; and an input circuit configured to receive the data voltage and a first scan signal, and control a timing of applying the data voltage to the amplification circuit based on the first scan signal.

The application discloses a kind of LDO without slice outside capacitance, belongs to linear power supply technical field, including transconductance constant circuit Gmc, constant transconductance error amplifier AE1, first output circuit, error amplifier AE2, second output circuit, band gap reference circuit BGR, power tube Pn1 and power tube Pn2;The transconductance constant circuit Gmc is used to generate bias voltage signal;The constant transconductance error amplifier AE1 is used to generate first output signal;The error amplifier AE2 is used to generate second output signal;Band gap reference circuit BGR generates multiple independent stable outputs, provides stable reference voltage for constant transconductance error amplifier AE1 and error amplifier AE2, and then generates bias voltage through transconductance constant circuit Gmc, and constant transconductance error amplifier AE1 drives power tube Pn1 through first output circuit to output signal for analog load, and error amplifier AE2 drives power tube PN2 through second output circuit to output signal for digital load.

The invention discloses a clock voltage doubling circuit, a reference circuit and a chip, the clock voltage doubling circuit comprises a target clock generation module, the target clock generation module comprises a first target clock generation unit, a second target clock generation unit and a substrate effect elimination unit, a substrate effect elimination unit generates a substrate bias voltage greater than a power supply voltage according to the power supply voltage, a first intermediate clock signal and a second intermediate clock signal; compared with P-channel transistors in the first target clock generation unit and the second target clock generation unit, the P-channel transistors in the first target clock generation unit and the second target clock generation unit adopt power supply voltage as substrate voltage and have higher conduction impedance, and the bulk effect of the P-channel transistors can be reduced, so that the conduction impedance is reduced, and the overall power consumption is further reduced.

The low-temperature drift high-power noise suppression band gap reference circuit disclosed by the application comprises a starting circuit, a pre-stabilization circuit, a curvature compensation circuit, a core band gap reference circuit and a low-pass filter circuit, the starting circuit is used for power-on starting of the pre-stabilization circuit and the core band gap reference circuit, the pre-stabilization circuit is used for filtering a part of power ripples in advance and supplying power for the core band gap reference circuit, the curvature compensation circuit and the low-pass filter circuit, the curvature compensation circuit is used for injecting and extracting exponential currents respectively in the high-temperature section and the low-temperature section to complete temperature curvature compensation in different temperature sections, and the low-pass filter circuit is used for completing power ripple suppression in the high-frequency section. The low-temperature drift high-power noise suppression band gap reference circuit realizes high-order curvature compensation in a wide temperature range of high and low temperatures, so that the temperature drift is effectively reduced in the whole temperature range, thereby reducing the power consumption of the circuit and significantly improving the precision of the voltage reference. And the PSR of the circuit is greatly improved.

The application discloses a positive and negative voltage source driving circuit, which is used for providing stable and accurate positive and negative voltage for a load circuit, saving chip area and energy consumption during work. The circuit comprises a band gap reference circuit, which is used for providing a positive reference voltage +VREF and working between a positive voltage VSP and a ground potential GND; a reference voltage generating circuit, which is used for receiving the positive reference voltage +VREF and outputting a positive voltage reference VREF_VGMP to a positive voltage operational amplifier and a negative voltage reference VREF_VGMN to a negative voltage operational amplifier; and the positive voltage operational amplifier and the negative voltage operational amplifier, which are used for outputting a positive voltage and a negative voltage to the load circuit respectively.

The invention relates to the technical field of circuits, in particular to a wide-voltage power supply band-gap reference source circuit, a ferroelectric memory and a circuit control method.The circuit comprises a voltage stabilizing circuit, a starting circuit, a control circuit, a temperature compensation circuit and an amplifying circuit, and the voltage stabilizing circuit conducts voltage stabilizing adjustment on a received voltage signal to obtain a voltage stabilizing signal; the starting circuit is used for generating an activation signal according to the voltage-stabilizing signal; the control circuit is respectively connected with the voltage stabilizing circuit and the starting circuit to generate a reference control signal; the temperature compensation circuit obtains a temperature compensation signal according to the reference control signal; and the amplifying circuit is respectively connected with the other circuit points to generate a final reference circuit signal, so that the problem that the performance of the ferroelectric memory is reduced due to the fact that the suppression capability of the circuit on external power supply noise and ripple waves is reduced under the condition that the external power supply voltage is relatively wide and relatively high in the prior art is solved, and the overall performance of the ferroelectric memory is improved.

The application belongs to the technical field of electronic circuits, and particularly relates to a low-temperature-drift high-PSRR op-amp-free bandgap reference circuit, which comprises MOS tubes M1, M2, M3, M4, M5, M6, M7, M8, M9, M10, M11, M12, M13, M14, M15, triodes Q1, Q2, Q3, resistors R1, R2 and R3; compared with the prior art, the circuit is an op-amp-free bandgap reference circuit, which avoids the influence of op-amp offset voltage on reference voltage and improves the accuracy of the reference voltage; the temperature coefficient of the reference voltage can be well adjusted by adjusting the resistance coefficient, so that the low-temperature-drift reference voltage is realized.

The invention belongs to the field of integrated circuits, and particularly relates to a curvature compensation band-gap reference circuit which comprises a starting circuit, a first-order band-gap reference circuit and a high and low temperature compensation circuit, and the starting circuit is connected with a bias current end of the first-order band-gap reference circuit; and a positive temperature current branch and a negative temperature current branch of the first-order band-gap reference circuit are connected with two MOS (Metal Oxide Semiconductor) tubes working in a sub-threshold region of the high and low temperature compensation circuit. On the basis of a traditional band-gap reference circuit, a high-temperature region compensation circuit and a low-temperature region compensation circuit are designed respectively by utilizing the current characteristic of a sub-threshold region of an MOS (Metal Oxide Semiconductor) tube, so that the temperature drift characteristic is improved within the temperature range of 40-125 DEG C; therefore, the reference source provided by the invention has the characteristic of low temperature drift, and is suitable for providing bias for precise high-performance systems such as AD / DA, LDO, PLL and the like.

The invention provides a three-dimensional stacked packaging substrate device and a manufacturing method, and relates to the technical field of semiconductor packaging, and the three-dimensional stacked packaging substrate device comprises a substrate which is a multi-layer stacked substrate; a drop point area corresponding to the vertical interconnection terminal is provided with a backflow channel, and the backflow channel comprises a grounding via hole array or a grounding metal ring surrounding the drop point area and is used for providing a continuous reference loop for a high-speed signal transmitted through the vertical interconnection terminal. Providing a core plate, carrying out multi-layer lamination, and manufacturing a backflow channel in a corresponding vertical interconnection terminal drop point area; manufacturing blind holes or micro holes in the substrate to realize interlayer interconnection; the substrate is divided into a high-speed digital area, an analog / radio frequency area and a power supply area according to functions for partition wiring, and the ground plane of each partition is kept continuous; a decoupling device is arranged at the near end of the vertical interconnection drop point or the chip power supply inlet. The system has the beneficial effects that low reflection, low jitter and low bit error rate of high-speed signal transmission are realized, and the electromagnetic compatibility and the working reliability of the system are improved.

A fault injection evaluation method and system, and a computer program product and a medium. The fault injection evaluation method comprises: configuring a target number of cycles for a circuit under test (101), wherein the target number of cycles is the number of cycles during which said circuit operates after being reset; injecting a fault into said circuit (102); outputting a reset signal to said circuit, and acquiring a fault output result that is output by said circuit after the fault is injected (103); and on the basis of the fault output result and a reference output result, performing a comparison to acquire a fault evaluation result (104). By means of the method, it is not necessary to additionally provide a reference circuit, so that the structural complexity of the fault injection evaluation system can be reduced, and the consumption of resources required during evaluation can be reduced.

The invention discloses an adjustable high-voltage output low-ripple switching power supply which comprises an input filter circuit, a VCC power supply circuit, a PWM controller, a main power circuit, a high-frequency transformer, a linear voltage regulation circuit, an output rectification filter, an output voltage regulation circuit and an output auxiliary source reference circuit. The method for realizing low-ripple high-voltage adjustable output and controlling the voltage and current slew rate of an external N-channel MOSFET switch comprises the steps of independently setting the voltage slew rate and the current slew rate, setting the voltage slew rate through an external capacitor and setting the current slew rate through an external resistor. The high-voltage adjustable output is realized, the output ripple is reduced, the voltage regulation rate is improved, the EMI (Electro-Magnetic Interference) performance is optimized, the high-frequency harmonic power is reduced, the efficiency loss is reduced, and the problem that the traditional switching power supply cannot realize high-voltage, adjustable and low-ripple output at the same time is solved.

Embodiments include herein are directed towards a circuit having a core bandgap reference circuit including a first transistor, a second transistor, and a differential amplifier. The circuit may further include a cascoded bandgap reference circuit in electrical communication with the core bandgap reference circuit, wherein the cascoded bandgap reference circuit includes a first supply noise path that includes a plurality of transistors that are electrically connected and a flipped voltage follower configuration that reduces an impedance at a transistor associated with a second supply noise path.

The application provides a low-power bandgap reference circuit, a chip and a reference voltage generation method, and solves the problems of high power consumption and the need to use an operational amplifier and a resistor in the prior art bandgap reference, and comprises the following components connected in series: a positive temperature coefficient module comprising a first transistor, a second transistor and a first MOS tube, a difference between base-emitter voltages of the first transistor and the second transistor generating a positive temperature coefficient voltage on the first MOS tube; a clamping module comprising a first clamping MOS tube and a second clamping MOS tube, the clamping module being used to provide equal first clamping voltage and second clamping voltage; a negative temperature coefficient module comprising a first MOS tube and a second MOS tube, threshold voltages of the first MOS tube and the second MOS tube serving as a negative temperature coefficient voltage; a current mirror module proportionally copying a current of a branch in which the first transistor is located to a branch in which the negative temperature coefficient module is located and a branch in which the second transistor is located, and the negative temperature coefficient voltage and the positive temperature coefficient voltage being added together to serve as a reference voltage.

The application discloses a memory data reading stability method and device, which comprises the following steps: after determining a reference trimming module, adjusting the equivalent resistance value of the reference trimming module to the optimal resistance value obtained in advance, connecting the second output end of a sensitive amplifier connected with the reference trimming module with a trimming module to be adjusted, and adjusting the trimming module to be adjusted according to the output signal of the sensitive amplifier, so that the total resistance values of each reference circuit and the first trimming module connected with each reference circuit in series are equal, the size of the reading window is increased, the stability of the read data is improved, and the sensitive amplifier in the memory is multiplexed.