850 results about "Reference circuit" patented technology

The invention discloses a band-gap reference circuit which comprises a band-gap reference core module used for superposing a positive temperature coefficient voltage and a negative temperature coefficient voltage to generate a band-gap reference voltage; and the reference output module is used for dividing the band-gap reference voltage to generate a reference voltage. Wherein the band-gap reference core module comprises a temperature excursion trimming unit, the temperature excursion trimming unit is used for trimming the temperature excursion of the band-gap reference voltage by adjusting the positive temperature coefficient voltage, and the reference output module further comprises a temperature excursion compensation unit used for adjusting the voltage division proportion of the reference output module. Therefore, the offset generated in the reference voltage in the temperature drift trimming process is eliminated. According to the band-gap reference circuit, it can be guaranteed that the reference voltage is not affected by the temperature condition, the consistency of the reference voltage can be guaranteed, and the application requirement is well met.

The invention discloses a microwave power detection system and a multipath microwave power detection consistency control method, and the method comprises the steps: carrying out the pi-attenuation test of a plurality of resistance value combinations through a pi-attenuation test circuit unit in the microwave power detection system, so as to determine the pi-attenuation initial values of a plurality of branch detection modules; the method comprises the following steps: acquiring a pi-decay initial value, performing multi-path microwave power detection according to the pi-decay initial value, selecting a branch detection module with microwave power test data closest to an average value of multi-path microwave power test data as a reference circuit, and adjusting other branch detection modules on the basis to complete consistency setting of multi-path microwave power detection. By adopting the multi-path microwave power detection method and device, the difference between the branches in the multi-path microwave power detection process can be effectively eliminated, the consistency of multi-path microwave power detection can be better controlled, and the precision and reliability of multi-path microwave power detection are improved.

The invention relates to the technical field of integrated circuits, in particular to a band-gap reference voltage source, which comprises a high-order compensation circuit, a low-order compensation circuit, a low-order compensation circuit, a low-order compensation circuit and a low-order reference circuit, the band-gap reference circuit is used for generating a positive temperature coefficient voltage and a negative temperature coefficient voltage, performing first-order temperature compensation on the negative temperature coefficient voltage by using the positive temperature coefficient voltage, performing high-order curvature compensation on the negative temperature coefficient voltage based on the target compensation current, determining the compensated voltage as a reference voltage and outputting the reference voltage; according to the band-gap reference voltage source, high-order compensation is introduced through the sub-threshold MOS tube, the negative temperature coefficient voltage can be well reduced, the reference voltage with the temperature coefficient approximate to zero is obtained, and practicability is high.

The invention provides a system and a method for detecting and preventing early explosion of an electronic detonator chip. The method comprises the following steps: S1, detecting a current charging voltage; s2, selecting a reference voltage, comparing the reference voltage with the current charging voltage, and obtaining a comparison result based on a comparator; and S3, taking an early explosion prevention measure according to a comparison result. According to the invention, the multi-gear reference circuit and the comparator are used, high-precision detection of voltage change of the energy storage capacitor is realized, and the digital control logic circuit is matched to detect that the voltage of the energy storage capacitor drops abnormally and rapidly, so that an early explosion symptom is identified; by arranging the bypass switch, the energy storage capacitor is short-circuited to the ground when an early explosion symptom is recognized, so that energy of the energy storage capacitor is not released through the ignition element, early explosion is prevented, and good practicability is achieved.

The invention discloses an ultrahigh-precision low-noise band-gap reference circuit, and relates to the technical field of integrated circuit design, the ultrahigh-precision low-noise band-gap reference circuit comprises a starting turn-off circuit, a reference core circuit, a high-order temperature compensation circuit and a digital trimming circuit, the starting turn-off circuit is connected with the reference core circuit, and the high-order temperature compensation circuit is connected with the digital trimming circuit through a Brokaw type band-gap reference topological structure. Accurate compensation of the voltage is achieved through deep negative feedback of the operational amplifier and a high-order temperature compensation circuit, and the temperature drift of the reference voltage is as low as 0.5-2 ppm / DEG C (-40 DEG C to 130 DEG C) and is increased by 5-10 times compared with a traditional band-gap reference (5-10 ppm / DEG C). The power consumption of the system can be saved by turning off the circuit when the circuit is not used, meanwhile, the digital trimming module is added to replace laser trimming in traditional engineering, the upper limit of the trimming range is improved, high-order temperature compensation and the digital trimming circuit are introduced, the precision of output voltage is improved, different devices are replaced, and the noise of the circuit is reduced. The problems that a traditional high-voltage band-gap reference temperature coefficient is high and noise is large are solved.

Systems and methods are provided for generating a stable reference current that has low sensitivity to operating temperature and supply voltage variations and is stable across process corners. In an example implementation, an improved reference current generator circuit is provided that includes a first circuit generating a first current that is proportional to absolute temperature and a second circuit generating a second current that is complementary to absolute temperature based on first transistors operating in respective triode regions. The second current compensates for process, voltage, and temperature variations in the first current at a node. According to some examples, the second current is also generated based on second transistors operating in respective saturation regions. The first current may be generated using a forward biased PN junction diode.

The utility model relates to the related field of voltage reference circuits, in particular to a voltage reference circuit with a simple structure and capable of realizing high-voltage application, which comprises a resistor R5 connected with a high-voltage power supply, MOS (Metal Oxide Semiconductor) transistors PM1, PM2 and PM3, triodes Q0, Q1 and Q2, and MOS transistors NM0 and NM5, compared with a traditional structure, the circuit is simple in structure and easy to implement, and due to the fact that an operational amplifier and a band-gap reference circuit are not needed, and the number of electronic components is small, the circuit area is greatly reduced; the high-voltage-resistant voltage-reducing and voltage-stabilizing circuit is simple in structure, low in process requirement, free of a high-voltage process and free of additional special devices, adopts a low-voltage process to enable the circuit to generate a low-voltage reference capable of bearing a high-voltage power supply of more than 100V, achieves the purposes of high-voltage resistance, voltage reduction and voltage stabilization, and has the characteristics of low cost and convenience in design, so that the high-voltage-resistant voltage-reducing and voltage-stabilizing circuit has very high use value and application value and is suitable for popularization.

The invention discloses a reference voltage generation module, a power supply system, an image sensor, equipment and a vehicle, the reference voltage generation module comprises a self-bias current source, a micro-current source, a first current mirror and a first reference circuit, the self-bias current source comprises the micro-current source used for generating bias current with a positive temperature coefficient, and the micro-current source is used for generating bias current with a negative temperature coefficient; the first current mirror is connected with the micro current source, and the first current mirror is of a low-voltage cascode structure and is used for performing mirror image output on the bias current; the first reference circuit is connected with the first current mirror, and the first reference circuit is used for generating a current with a negative temperature coefficient and generating a first reference voltage based on the bias current and the current with the negative temperature coefficient. The reference voltage generation module does not need to be compensated by a capacitor, so that the starting time and the response speed of the system are ensured.

A bandgap reference circuit includes a first, a second and a third current source, a first and a second amplifier. The first, the second and the third current source each includes two cascode PMOS transistors for reducing the voltage stress applied to PMOS transistors when receives a high power supply voltage. The first amplifier controls the PMOS transistors in the first and the second current source to ensure that the PMOS transistors have enough headroom when receives a low power supply voltage. The second amplifier provides a gain-boosting loop to prevent the system mismatch of the PMOS transistors in the first, the second and the third current source. A temperature coefficient adjustment unit introduces positive temperature coefficients and negative temperature coefficients in the currents generated by the first and second current source, and a resistor generates the reference voltage according to a current duplicated by the third current source.

The application relates to a high-order curvature compensation band gap reference circuit, which comprises a first-order band gap reference circuit, a high-temperature region curvature compensation circuit and a starting circuit. The first-order band gap reference voltage is realized by the following technologies: the voltage generated by the current of PMOS tube M4 on resistors R3-R4 and the voltage generated by the current of PMOS tube M6 on resistor R4 both have positive temperature coefficients, the voltage generated by the current of PMOS tube M5 on resistors R3-R4 and the voltage generated by the current of PMOS tube M7 on resistor R4 both have negative temperature coefficients; the working area of NMOS tube M13 gradually changes from the deep triode region, the triode region to the saturation region with the increase of temperature by controlling the working of NMOS tube M13 by the technology that the gate voltage of NMOS tube M12 increases with the increase of temperature, so that the current of PMOS tube M14 is high-order nonlinear with temperature, and the first-order band gap reference voltage is temperature compensated, thereby obtaining the high-order temperature compensation band gap voltage.

The invention relates to a radiation hardening band-gap reference current source circuit, and belongs to the technical field of radiation resistance of integrated circuits. Over-degradation of the threshold in a high total dose environment is focused on a circuit design level, closed-loop adjustment of the threshold voltage is realized through total dose detection and a dynamic compensation mechanism, and reliability and stability of the circuit in the high dose radiation environment are remarkably improved. Through the embedded logic of the reinforced circuit, the anti-radiation performance of the reinforced circuit is ensured, and the reinforced circuit can work normally in a high-dose environment. Reliable triggering and system self-recovery in a full dose range can be realized through a bias closed-loop design provided by a reference circuit for a reinforced loop, and the application requirements of extreme environments such as spaceflight and nuclear energy are met. The method has the advantages of anti-radiation effect, good dynamic nature, strong transportability and the like.

The invention discloses a circuit and a method for realizing current sharing through master-slave parallel connection, and the method is characterized in that a master machine and a plurality of slave machines are connected in parallel, and are respectively connected to a current sharing control bus through an isolation chip, a TTL and differential mutual conversion unit and an information gating switch in sequence, thereby forming a parallel current sharing circuit; comprising a host issuing current reference circuit and a processing circuit after a slave receives a current reference signal from the host. After a plurality of instrument power supplies are connected in parallel, a user sets a master-slave parallel mode on a front panel of the power supplies and selects a master computer, and other computers are slave computers; when a plurality of power supplies work in parallel, the host issues a current reference signal to the current sharing control bus through the current reference generation circuit, and the slave outputs a corresponding current value according to the current reference signal issued by the host. One of a plurality of power supply modules can be randomly selected as a main module, the flexibility is high, the stability is good, and the power supply has the characteristics of simplicity in wiring and control, low transmission loss of control signals, difficulty in interference of the control signals, balanced output control of all the power supply modules and the like.

The invention discloses a low-temperature drift reference circuit, which belongs to the technical field of electronic circuits and comprises a starting unit, a reference core unit and a base current absorption unit, the starting unit is connected with the reference core unit and the base current absorption unit, and the reference core unit is connected with the base current absorption unit. According to the low-temperature-drift reference circuit, the T-type resistor network is adopted, negative temperature coefficient voltage is compensated depending on a positive temperature coefficient voltage expansion item, and low-temperature-drift reference voltage can be obtained; the magnitude of the reference voltage can be adjusted by changing the proportional relation between the resistance type and the resistance value of the resistance network and the current mirror.

The invention discloses a low-temperature-drift band-gap reference source circuit. The low-temperature-drift band-gap reference source circuit comprises a starting circuit, a PTAT current generating circuit, a CTAT current generating circuit and an output circuit. The PTAT current generation circuit is used for generating positive temperature coefficient current, and adopts a power supply voltage isolation structure consisting of two PMOS (P-channel Metal Oxide Semiconductor) tubes and two NMOS (N-channel Metal Oxide Semiconductor) tubes to isolate the interference of power supply voltage; the CTAT current generating circuit is used for generating a negative temperature coefficient current and adopts a clamping structure consisting of two triodes, so that the CTAT current generating circuit is not influenced by a power supply voltage; and the output circuit is used for outputting low-temperature-drift reference current and / or voltage. An operational amplifier clamping structure is not used, the complex structure of an integrated operational amplifier is omitted, the circuit structure is simplified, the area and power consumption are reduced, the influence of offset voltage of the integrated operational amplifier can be avoided, and practicability is high. In addition, the reference circuit further comprises a temperature compensation circuit, temperature high-order compensation is carried out through a feedback network formed by two resistors, and the reference current and the reference voltage are more accurate.

The utility model provides a band-gap reference circuit, a chip and electronic equipment, and belongs to the technical field of electronics. The band-gap reference circuit comprises a band-gap reference voltage generation module, a positive temperature coefficient current generation module, a negative temperature coefficient current generation module, a zero temperature coefficient current generation module and a current comparison module; the positive temperature coefficient current generation module is connected with the band-gap reference voltage generation module, the negative temperature coefficient current generation module is connected with the positive temperature coefficient current generation module, and the zero temperature coefficient current generation module is respectively connected with the positive temperature coefficient current generation module and the negative temperature coefficient current generation module; the first input end of the current comparison module is connected with the zero temperature coefficient current generation module, the second input end is connected with the positive temperature coefficient current generation module or the negative temperature coefficient current generation module, and the output end is connected with the band-gap reference voltage generation module. According to the invention, self-calibration of temperature compensation is carried out, and the problem of high temperature drift coefficient is reduced.

The invention discloses a band-gap reference circuit with a second-order temperature compensation and a high power supply rejection ratio in the technical field of semiconductor circuits. The band-gap reference circuit comprises a starting circuit which is used for providing a bias current when the circuit is started and preventing the circuit from working at a stable working point where the current of positive and negative feedback branches at the input end of an operational amplifier circuit is zero; the operational amplifier circuit is used for clamping, and the voltages of the two input ends of the operational amplifier are approximately equal by utilizing the virtual short characteristic; the second-order temperature compensation circuit is used for compensating linear and non-linear terms in base-emitter voltage of the bipolar transistor and reducing the temperature drift of the band-gap reference circuit; the reference voltage output circuit is used for outputting reference voltage, providing a stable and accurate reference voltage source and meanwhile participating in control over starting current generated by the starting circuit. The circuit is innovative and efficient, stable reference voltage with small temperature excursion can be provided, and meanwhile the circuit has a large voltage input range, a high power supply rejection ratio and a reliable starting circuit.

The invention belongs to the technical field of complementary metal-oxide-semiconductor analog circuits, and particularly relates to an ultra-wide power linear voltage stabilizer based on a BCD high-voltage process. Comprising a high-voltage-to-low-voltage biasing circuit, a low-voltage self-starting circuit, a band-gap reference circuit, a high-voltage source linear voltage stabilizer and an instantaneous pulse breakdown locking circuit. The high-voltage-to-low-voltage bias circuit provides bias voltage for the whole circuit, the low-voltage self-starting circuit automatically starts the circuit when the circuit is in a low-voltage condition to ensure stable operation of the circuit, the band-gap reference circuit provides stable reference voltage for the high-voltage source linear voltage stabilizer, the high-voltage source linear voltage stabilizer comprises a two-stage operational amplifier, and the two-stage operational amplifier is connected with the high-voltage source linear voltage stabilizer. And the secondary operational amplifier compares the reference voltage with the divided output voltage and outputs a feedback signal, thereby realizing adjustment of the output voltage. And the instantaneous pulse breakdown locking circuit is used for preventing breakdown under the abnormal condition that the circuit load impulse is low. When the VBAT of the power supply is in the range of 1.1 V to 5 V and the temperature is-55 DEG C to 150 DEG C, the output absolute value follows the VBA.

The invention discloses a high-voltage pre-modulation circuit. The high-voltage pre-modulation circuit comprises a port protection circuit, a self-starting biasing circuit, a reference circuit and a step-down modulation circuit, the port protection circuit has a negative voltage protection function, when the port voltage is negative voltage, voltage transmission can be blocked, and internal devices are prevented from being damaged; the self-starting bias circuit is quickly conducted when the power supply is powered on, provides bias current for the port protection circuit and provides bias voltage for the step-down modulation circuit; the reference circuit takes the output voltage of the step-down modulation circuit as the power supply voltage, and the output reference voltage of the reference circuit is the reference level of the step-down modulation circuit; the step-down modulation circuit can realize the function of converting high power supply voltage into low voltage VOUT, and provides stable power supply voltage for other modules in the integrated circuit. The high-voltage pre-modulation circuit with the negative-voltage protection function has the negative-voltage protection function, only one path of power supply voltage is needed, high reliability is achieved, and meanwhile the system design difficulty is lowered.

The high-order compensation band-gap reference circuit capable of being trimmed comprises PNP type triodes Q0-Q2, PMOS (P-channel Metal Oxide Semiconductor) transistors M1-M3, an NMOS (N-channel Metal Oxide Semiconductor) transistor M4, resistors R0-R3, a resistor RT (1) capable of being trimmed, a four-input operational amplifier A1 and a two-input operational amplifier A2, according to the reference voltage generated by the circuit provided by the invention, high-order compensation is completed by utilizing the four-input operational amplifier A1 on the basis of traditional first-order temperature compensation, and meanwhile, the trimming resistor circuit is added to ensure that the band-gap reference voltage is not influenced by temperature and process changes, so that the high-precision band-gap reference voltage is obtained; the band-gap reference has the advantages of high band-gap reference precision, simple compensation algorithm and good compensation stability.

The present application discloses a defect detection method, device, electronic device and storage medium for PIN needles, belonging to the field of defect detection technology. The method comprises: acquiring point cloud data of a circuit board to be detected acquired by N line laser cameras, generating a first depth map of the PIN needles on the circuit board to be detected based on the point cloud data acquired by each line laser camera, judging whether the PIN needles on the circuit board to be detected are missing based on the first depth map and the second depth map of the PIN needles on the reference circuit board, and then outputting a defect detection result including at least position indication information of the missing PIN needles on the circuit board to be detected, wherein N is determined based on the size of the circuit board to be detected and the acquisition range of a single line laser camera, and the PIN needles on the reference circuit board do not have defects, thereby providing a solution for defect detection of PIN needles with the aid of line laser cameras.

A temperature-sensing circuit is provided, which includes: a search-control circuit, a voltage-reference circuit, a CTAT (complementary to absolute temperature) circuit, a digital-to-analog converter (DAC) circuit, a comparison circuit, and an SAR (successive approximation register) circuit. The search-control circuit generates a reference-voltage selection signal according to a plurality of control signals. The voltage-reference circuit selects a first reference voltage from a plurality of candidate reference voltages according to the reference-voltage selection signal, and provides a second reference voltage. The CTAT circuit converts the second reference voltage into a first comparison voltage. The DAC circuit converts the first reference voltage into a second comparison voltage. The comparison circuit compares the first comparison voltage and the second comparison voltage to generate a comparison-result signal. The SAR control circuit outputs each bit of a temperature-segment signal of an operating temperature according to the comparison-result signal. The control signals include the temperature-segment signal.

The invention discloses a high-precision integrated temperature sensor circuit and application, and relates to the technical field of integrated circuits, and the high-precision integrated temperature sensor circuit comprises a band-gap reference circuit, a buffer circuit, an analog-to-digital conversion circuit, a two-phase non-overlapping clock generation circuit and an FIR (Finite Impulse Response) digital filter. It needs to be explained that a key circuit sigma-delta modulator adopts an integrator cascade feed-forward structure CIFF, compared with a CIFB with a feedback structure, an STF function of an ADC of a feed-forward structure is close to 1, a peak value can appear only at a high frequency, only a very small error signal can pass through a whole loop, and therefore the stability of the analog-to-digital converter is greatly improved. Therefore, the gain of the amplifier in the first-stage integrator can be made relatively large, and noise and nonlinearity generated by the rear-stage integrator are effectively suppressed. Moreover, each stage of integrator does not process a feedback signal with high-frequency noise, so that the bandwidth requirement on the next stage of operational amplifier is reduced, the power consumption required by the CIFF structure is lower, and meanwhile, the output swing has better stability due to no feedback structure.

The invention relates to a self-adaptive inter-chip current sharing circuit for linear LED driving and a control method of the self-adaptive inter-chip current sharing circuit. The current sharing circuit comprises a reference circuit module, an operational amplifier, a power tube, a plurality of current mirrors and a sampling port, current flowing through each chip is adjusted through reference voltage and a reference current source, and current balancing of multiple chips is achieved. And the operational amplifier controls the power tube to maintain constant current output according to a sampling resistor feedback signal. The current mirror group forms a proportional current feedback mechanism to ensure that the ratio of the sampling current to the reference current is constant, so that the driving current is stabilized. Under the condition that multiple chips are connected in parallel, a current sampling tube is combined with a current mirror, overload current is adjusted, and it is ensured that driving current of each chip is within a rated range. The self-adaptive current-sharing control method is suitable for a multi-chip current-sharing control device and computer equipment, accurate distribution and adjustment of the LED driving current are achieved, and the stable lighting effect and efficient energy utilization are ensured.

The utility model belongs to the technical field of human body pulse detection, and discloses a pulse amplifying circuit based on a pressure sensor and a pulse signal acquisition system, and the circuit comprises the pressure sensor, a first-stage amplifying circuit, a second-stage amplifying circuit, a third-stage amplifying circuit, a fourth-stage amplifying circuit and a reference circuit, the signal input end of the first-stage amplification circuit receives an original pulse signal output by a pressure sensor and then outputs a differential amplification signal, the signal input end of the second-stage amplification circuit receives the differential amplification signal and then suppresses a common-mode signal and outputs a second amplification signal, and the signal input end of the third-stage amplification circuit receives the second amplification signal and then outputs the third amplification signal. The isolated direct current passes through a signal and outputs an alternating current signal in a following mode, a fourth-stage amplifying circuit receives the alternating current signal and then amplifies and filters the alternating current signal, and an amplified pulse signal is obtained and output. According to the utility model, the cost of the product is reduced, the circuit is simplified, the practicability is enhanced, and the pulse signal can be accurately measured.

The present invention discloses a variable frequency regulation system and method for improving the anti-interference performance of a wheel sensor, comprising a microcontroller circuit; the microcontroller circuit is respectively connected to a DDS signal generating circuit, a receiving resonance regulating circuit, a receiving signal sampling conversion circuit, a temperature detection circuit, a CAN communication circuit, an EEPROM circuit and an ADC reference circuit; the DDS signal generating circuit is sequentially connected to a power amplifier circuit, a transmitting resonance regulating circuit and a transmitting signal sampling conversion circuit; the output end of the transmitting signal sampling conversion circuit is connected to the microcontroller circuit; and the transmitting resonance regulating circuit is controlled by the microcontroller circuit. The present invention can improve the sensing reliability and anti-interference performance of the wheel sensor to meet the wheel detection requirements under the electromagnetic environment of different projects, and the present invention can adjust the working frequency of the wheel sensor according to the different interference frequencies of each project, so that the wheel sensor has higher flexibility and anti-interference ability.

The invention provides a band-gap reference circuit and a method for improving the temperature coefficient of the band-gap reference circuit. The band-gap reference circuit comprises a core circuit, a load and bias circuit, a dual temperature curvature compensation structure and an output circuit. Collector electrodes of the first bipolar transistor, the second bipolar transistor and the third bipolar transistor are grounded. The dual temperature curvature compensation structure comprises a resistance network used for forming a first compensation path and a second compensation path; the first compensation path is configured to generate a first compensation current using temperature characteristics of the second and third bipolar transistors. The second compensation path is configured to generate a second compensation current using temperature characteristics of the first and third bipolar transistors. According to the invention, a dual temperature curvature compensation structure is arranged, two different compensation currents are generated in parallel, different non-linear sources are corrected respectively, and finally, the accurate compensation of the overall temperature coefficient is realized through linear superposition, so that the temperature curvature can be effectively inhibited.

The invention belongs to the technical field of analog circuits, and particularly relates to a high-order compensation low-temperature-coefficient band-gap reference circuit based on a substrate bias technology. The high-order compensation band-gap reference circuit is characterized in that a substrate bias technology is used in the high-order compensation band-gap reference circuit, a temperature term highly fitted with a high-order nonlinear temperature term of base-emitter voltage VBE of a bipolar transistor is generated through substrate bias of an MOS tube in a sub-threshold region for temperature compensation, and the temperature coefficient of output voltage is greatly reduced; the circuit introduces trimming current to be injected into the resistor (R3), error trimming is achieved, trimming is easy, and the problem of temperature coefficient change caused by various non-ideal factors can be solved conveniently.

The invention provides a band-gap reference circuit for a low-voltage circuit, which comprises a clamping operational amplifier circuit for receiving an input voltage and outputting an amplified input voltage under the control of a bias voltage; the feedback adjustment circuit performs feedback adjustment on the amplified input voltage to obtain a feedback voltage; the current mirror circuit generates reference voltage and reference current according to the feedback voltage; the transistor circuit generates a positive / negative temperature coefficient current by using a reference voltage and generates an input voltage. The reference voltage output circuit generates and outputs a bandgap reference voltage using the reference current. The threshold voltage of a transistor in the circuit is reduced by using a substrate bias technology, the input node of the clamping operation amplification circuit is optimized, the minimum power supply voltage for working of the circuit is reduced, the loop is improved by using the feedback adjustment circuit, the power supply suppression capability is improved, and the stability of the output band-gap reference voltage is improved; the problems of how to improve the minimum power supply voltage of the band-gap reference circuit and how to optimize the power supply suppression effect are solved.

The invention provides a band-gap reference circuit, and relates to the technical field of integrated circuits, and the band-gap reference circuit comprises a core circuit, a negative temperature current extraction circuit, a high-order modulation processing circuit and an output circuit. The core circuit is used for generating an X-point voltage, a positive temperature coefficient PTAT current without a base current and a negative temperature coefficient CTAT current mixed with the base current. Wherein the X-point voltage is the base-emitter voltage of a triode through which the PTAT current flows in the core circuit. And the negative temperature current extraction circuit is used for extracting CTAT current without base current according to the X-point voltage. And the high-order modulation processing circuit is used for generating band-gap reference current which is subjected to high-order modulation and is subjected to base current influence elimination according to the X-point voltage and the PTAT current provided by the core circuit and the CTAT current provided by the negative temperature current extraction circuit. And the output circuit is used for converting the band-gap reference current into band-gap reference voltage and outputting the band-gap reference voltage.

The invention discloses a high-power-supply-rejection-ratio band-gap reference circuit with base current correction and high-order temperature compensation, which comprises a pre-voltage-stabilizing circuit module used for generating and outputting internal power supply voltage according to external power supply voltage, the internal power supply voltage is supplied to the band-gap reference core circuit module so as to isolate transmission of power supply noise to reference output; the high-order temperature compensation circuit module is used for generating nonlinear compensation current according to the bias voltage; the band-gap reference core circuit module is used for generating current in direct proportion to absolute temperature, reference voltage and reference output voltage based on internal power supply voltage and feeding back the reference voltage to the pre-voltage-stabilizing circuit module to serve as bias reference; and the base current correction circuit module is used for sampling the base current of the bipolar transistor in the band-gap reference core circuit module. On the premise that the circuit structure and the power consumption are reasonable, the temperature drift of the reference voltage is reduced, and the power supply suppression capability is improved.