The present invention discloses a bandgap
reference circuit for implementing the high-order temperature compensation of a
diode by means of an MOS
transistor. The bandgap
reference circuit comprises afirst-order bandgap
reference circuit, a high-temperature region temperature
curvature compensation circuit, a low-temperature region temperature segment compensation circuit and a startup circuit. According to the bandgap reference circuit, a drain
electrode and a substrate of a PMOS
transistor in which a source
electrode, the drain
electrode and a gate electrode are in short connection with oneanother form a forward end and a reverse end of the
diode respectively; by utilizing
negative temperature coefficient
voltage VCTAT generated by the drain-substrate
voltage of the PMOS
transistor inwhich the source electrode, the drain electrode and the gate electrode are in short connection with one another and
positive temperature coefficient
voltage VPTAT generated by the difference of two drain-substrate voltages of the PMOS transistor in which the source electrode, the drain electrode and the gate electrode are in short connection with one another, the
negative temperature coefficient voltage VCTAT and the
positive temperature coefficient voltage VPTAT are weighted to obtain first-order bandgap reference voltage, high-temperature region temperature
curvature compensation voltage VNL1 and low-temperature region temperature segment compensation voltage VNL2 are introduced to the first-order bandgap reference circuit to obtain bandgap reference voltage with a low-
temperature coefficient, and therefore the bandgap reference circuit for implementing the high-order temperature compensation of the
diode by means of the MOS transistor is obtained.