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Low-power-consumption band-gap reference circuit with high-order curvature compensation

A reference circuit, high-level temperature compensation technology, applied in the direction of regulating electrical variables, control/regulating systems, instruments, etc., can solve the problem of not meeting the requirements of high-performance circuits to stabilize power supply, and achieve low power consumption and power consumption lower than Effect

Inactive Publication Date: 2018-12-21
厦门芯豪科技有限公司
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  • Abstract
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  • Claims
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AI Technical Summary

Problems solved by technology

The temperature coefficient generated by the first-order compensated bandgap reference circuit is generally within 50ppm / °C, which cannot meet the requirements of high-performance circuits for stable power supplies

Method used

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  • Low-power-consumption band-gap reference circuit with high-order curvature compensation

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Embodiment Construction

[0016] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0017] When the bias circuit is at the zero-state balance point, the first PMOS transistors P1 and P1' are turned on, and a current flows through the first PMOS transistor P1' through the current mirror and is injected into the eleventh NMOS transistor N11 and the twelfth NMOS transistor N12 The gate of the gate raises its voltage, prompting the circuit to break away from the zero-state equilibrium point. When the overall circuit works normally, the current of the PMOS transistor P0 will raise the gate voltage of the first PMOS transistor P1, P1', turn off the first PMOS transistor P1', and complete the startup of the circuit.

[0018] The gates of the eleventh NMOS transistor N11 and the twelfth NMOS transistor N12 are connected together to the output terminal of the operational amplifier. Eleventh NMOS tube N 11 The drain end of the o...

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Abstract

The invention discloses a low-power-consumption band-gap reference circuit with high-order curvature compensation. The band-gap reference circuit comprises a starting circuit, a biasing circuit, an operational amplifier circuit, a generation circuit and a high-order temperature compensation circuit. According to the band-gap reference circuit, compensation is performed on high-order temperature characteristics of emitter junction voltages of PNP-type transistors according to an inherent exponential relation among sub-threshold regions of MOS transistors; under the condition of only adding twoimage currents, compared with a traditional first-order low-voltage band-gap reference circuit, the band-gap reference circuit is low in power consumption, and the level of the power consumption is nanowatt; by the adoption of a curvature compensation technology, the temperature drift coefficient of an output reference voltage is relatively small and is 20ppm / DEG C or below; and when the ambient temperature changes within the range from -20 DEG C to 80 DEG C, the temperature drift is 4.6ppm / DEG C, and the power consumption of the whole band-gap reference circuit is lower than 1uw.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuits, in particular to a low-power consumption bandgap reference circuit with high-order curvature compensation. Background technique [0002] Bandgap reference circuit is a basic component of integrated circuit chips. With the increasing market demand for wearable electronic products and portable charging power supplies, higher requirements are placed on bandgap reference circuits with low temperature coefficient and low power consumption. With the rapid development of integration technology, higher requirements are put forward for the power consumption and temperature characteristics of the bandgap reference circuit. [0003] The traditional first-order temperature compensation technology uses two BJT tubes, resistors, and an operational amplifier to generate a current proportional to the absolute temperature, which passes through the V of the BJT tube be The voltage approx...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/567
CPCG05F1/567
Inventor 彭何曾爱华
Owner 厦门芯豪科技有限公司
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