9results about How to "Small temperature coefficient" patented technology

The application provides a band gap reference voltage source circuit, which comprises a starting circuit, a core circuit and a current compensation circuit. The core circuit comprises a first NMOS transistor, first and second transistors, a first operational amplifier, first to third resistors and a compensation resistor. The drain of the first NMOS transistor is connected to a power supply, the source is connected to the first end of the first resistor, the base of the first transistor and the collector of the second transistor, and the gate is connected to the output end of the first operational amplifier. The second end of the first resistor is connected to the collector of the first transistor and the base of the second transistor, and the first end of the first resistor serves as the output end of the core circuit. The emitter of the first transistor is connected to the first end of the second resistor and the same input end of the first operational amplifier. The emitter of the second transistor is connected to the first end of the third resistor and the opposite input end of the first operational amplifier. The second end of the second resistor and the second end of the third resistor are respectively connected to the first end of the compensation resistor and the output end of the current compensation circuit, and the second end of the compensation resistor is grounded.

This application discloses a low-power temperature-compensated RC oscillator, comprising a low-voltage linear buffer, an RC core circuit, a comparator, a Schmitt trigger, a non-overlapping clock generator, and a level shifter. The low-voltage linear buffer uses intrinsic transistors to reduce operating voltage and power consumption; the RC core circuit employs temperature compensation technology, including a series low-temperature drift resistor and a temperature-dependent current source, causing the equivalent resistance to increase with temperature; the comparator compares a triangular wave signal with a reference voltage and outputs a reference clock; the Schmitt trigger filters out clock glitches; the non-overlapping clock generator generates a two-phase clock with dead time to control charging and discharging; and the level shifter converts the low-voltage domain clock to the high-voltage domain. This oscillator eliminates the influence of comparator offset voltage through two-phase switching control and employs low-voltage and temperature compensation technology to achieve a high-precision, low-temperature drift reference frequency in a small area with low power consumption, making it suitable for compact sensing and measurement systems.

The invention discloses a hierarchical alignment method and system for a multi-modal perception data set of a soft manipulator, and the method achieves the coverage of a whole process from data quality evaluation to feature space alignment to semantic consistency optimization through the three-stage design of single-modal noise evaluation, feature-level adaptive alignment and semantic-level constraint alignment. The limitation that a traditional method only pays attention to single-level alignment is broken through, and the model can gradually adapt to the complex characteristics of touch multi-mode perception. Secondly, an adaptive temperature function is designed based on modal pair comprehensive reliability, and a strict monotone mapping relation between temperature coefficients and modal noise characteristics is established, so that a high-noise modal pair automatically obtains a relatively large temperature coefficient to enhance robustness, and a low-noise modal pair automatically obtains a relatively small temperature coefficient to improve alignment precision; the technical problem that the fixed temperature coefficient cannot adapt to the touch multi-mode heterogeneous noise characteristic is fundamentally solved, and end-to-end sensitivity adjustment is achieved through the global learnable self-adaptive adjustment coefficient.

The invention provides a multiplexing system of a single-ended to differential signal driver and a detector reading chip, and belongs to the technical field of active electrical nonlinear devices. The system comprises a multi-channel capacitance trans-impedance amplifier, a corresponding ping-pong type switched capacitor sampling hold circuit, a multiplexer, a single-ended to differential signal driver and an ADC (Analog to Digital Converter). A capacitance trans-impedance amplifier of a selected channel receives an X-ray signal responded by a photoelectric sensor, voltage passes through a corresponding switched capacitor sampling holding circuit, and signal charges are stored on a group of holding capacitors; the ADC is connected to the input end of the single-ended to differential signal driver through the multiplexer and performs ADC quantization output; the single-ended to differential signal driver is of a switched capacitor type circuit structure. According to the invention, a unit gain voltage buffer required for driving CTIA output voltage during multi-channel switching is saved, extra noise introduced by Buffer is removed, and power consumption and layout area are reduced.

A wide-temperature, high-precision optical acceleration sensing chip and acceleration sensor based on the principle of a microcavity interferometer are disclosed. The acceleration sensing chip includes a first substrate, a second substrate, and a third substrate. An optical fiber mounting base and a light-transmitting hole are formed on the first substrate. The chip is characterized by a single-mode optical fiber assembly fixed on the optical fiber mounting base. The end face of the single-mode optical fiber assembly is precision ground and perpendicular to the axis of the optical fiber core. The optical fiber mounting base is a stepped hole with a first stepped portion and a second stepped portion. The single-mode optical fiber assembly includes a glass sleeve disposed on the outer layer and a single-mode optical fiber disposed in the core. The first stepped portion, the second stepped portion, the end face of the glass sleeve, and the end face of the single-mode optical fiber are all perpendicular to the core axis of the single-mode optical fiber. The first stepped portion forms a first fit with the end face of the glass sleeve, and the second stepped portion forms a second fit with the end face of the single-mode optical fiber.

This invention discloses a high-precision bandgap reference circuit, belonging to the field of analog integrated circuit design technology. The BGR circuit includes a power supply voltage input terminal AVDD, a ground terminal GND, PMOS transistors P1-P22, NMOS transistors N1-N14, and bipolar junction pnp transistors Q1-Q4. In this BGR circuit, the sources of PMOS transistors P1, P2, P3, P4, and P5 are connected to the power supply voltage input terminal AVDD. This invention can solve the problems of output voltage deviation and temperature coefficient deterioration caused by device mismatch in traditional bandgap reference structures, and further reduces the temperature coefficient of the bandgap reference output voltage and improves its accuracy by employing second-order curvature calibration technology. This significantly reduces the coverage area required for first-order compensation, improves the accuracy of the bandgap reference output voltage, and improves the temperature coefficient.

The invention discloses a doping preparation method of a high-temperature stable rare earth magnet assembly, and relates to a magnetic material and a preparation technology thereof. Heavy rare earth elements such as terbium and dysprosium are compositely doped into a neodymium iron boron matrix, and technological parameters such as ball milling, compression molding, sintering and magnetic field oriented annealing are optimized, so that the coercive force and magnetic energy product stability of the magnet under a high-temperature working condition are remarkably improved. The method gives consideration to magnetic performance and cost control, is suitable for high-temperature application scenes such as a welding tool magnetic attraction device, effectively solves the problem that the magnetic performance attenuation of a conventional NdFeB magnet at high temperature is fast, improves the high-temperature reliability of the magnet, and prolongs the service life of the magnet.

The application discloses a modified slow-release rare earth alloy, a sintered neodymium-iron-boron magnet and a preparation method thereof. 1‑m X m , m is an atomic percentage content, 35at%<=m<=76at%; wherein, RE is a rare earth element, composed of light rare earth elements and heavy rare earth elements; X is selected from at least one of Ga, In, Si, Ge, Sn, Sb, Bi, S, Se and Te. The modified slow-release rare earth alloy can improve the magnetic performance and high-temperature stability of the sintered neodymium-iron-boron magnet.

This invention proposes a gallium nitride-based semiconductor laser with a graded thermal conductivity waveguide layer. By fitting the In ion intensity distribution or In atom concentration distribution, the transverse phonon velocity distribution, and the thermal conductivity distribution of the graded thermal conductivity upper and lower waveguide layers using SIMS testing, all of these curves satisfy the Stirling function or the LineMod function. The gradient of the transverse TA phonon velocity homogenizes phonon scattering in the lower waveguide layer, reduces thermally induced lattice distortion, avoids optical field mode distortion, and improves the optical field confinement factor. The gradient of the transverse phonon velocity homogenizes the temperature distribution in the upper waveguide layer, changing the thermal stress from concentrated to distributed, reducing phonon transport loss caused by interface scattering. It avoids the "bottleneck effect" of heat flow at the interface between the active region and the lower waveguide layer, further reducing the temperature coefficient of the threshold, accelerating heat flow to the substrate, and preventing thermal runaway caused by increased driving current after exceeding the threshold.