24results about How to "Small temperature coefficient" patented technology

The invention relates to a wide-temperature high-precision optical acceleration sensitive chip and sensor based on a microcavity interferometer principle and a manufacturing method thereof, the wide-temperature high-precision optical acceleration sensitive chip comprises a first substrate, a second substrate and a third substrate, an optical fiber mounting seat and a light through hole are formed on the first substrate, a beam structure and an inertial mass block are processed on the second substrate, and the beam structure is arranged on the third substrate. The first substrate, the second substrate and the third substrate are all made of double-polished super-flat silicon wafers, a single-mode optical fiber assembly is fixed to the optical fiber installation base, the end face of the single-mode optical fiber assembly is subjected to precise grinding and is perpendicular to the axial direction of an optical fiber core, and a first cavity mirror is formed by means of the end face of the side, facing the light through hole, of the inertial mass block. A second cavity mirror is formed on the end face of the single-mode optical fiber assembly, the first cavity mirror and the second cavity mirror form an F-P interference cavity, and the first substrate, the second substrate and the third substrate are connected through the silicon-silicon bonding technology.

The invention relates to a band-gap reference voltage circuit based on channel length modulation effect compensation. The circuit comprises a Zener voltage stabilization source module which is used for carrying out preliminary step-down on external input voltage to generate primary reference voltage; the linear voltage stabilization source module is coupled to the Zener voltage stabilization source module and is used for generating a linear voltage stabilization source; the first-order band-gap reference circuit module is coupled to the linear voltage stabilization source module and is used for generating a first current subjected to first-order temperature compensation; the lambda modulation effect high-order compensation circuit module is respectively coupled to the Zener voltage stabilization source module and the linear voltage stabilization source module, and the lambda modulation effect high-order compensation circuit module generates a second current with a high-order nonlinear temperature coefficient through a channel length modulation effect; and the starting circuit module is used for providing starting voltage and driving current in the power-on process of the band-gap reference voltage circuit. According to the invention, the reference voltage with an ultralow temperature coefficient can be realized.

The invention relates to a dual-temperature-compensation pressure sensor, and the sensor comprises a sensor body which comprises a pressure sensing element and a first temperature sensor, and the pressure sensing element is used for sensing the pressure P and outputting a voltage signal Up; the first temperature sensor is used for sensing the temperature T1 of a medium and outputting a voltage signal UT1. The second temperature sensor is used for sensing the temperature T2 of the surrounding environment and outputting a voltage signal UT2; and the compensation module adjusts and compensates the pressure value Up detected by the pressure sensing element by adopting a compensation algorithm according to the temperature change detected by the temperature sensor I and the temperature sensor II, and finally obtains a corrected pressure value P '. According to the invention, through the detected temperature change, the compensation module is adopted to adjust the pressure reading in real time, so that the influence of the temperature on the pressure measurement is eliminated or reduced, and the measurement precision and stability under different temperature conditions are improved.

The application provides a band gap reference voltage source circuit, which comprises a starting circuit, a core circuit and a current compensation circuit. The core circuit comprises a first NMOS transistor, first and second transistors, a first operational amplifier, first to third resistors and a compensation resistor. The drain of the first NMOS transistor is connected to a power supply, the source is connected to the first end of the first resistor, the base of the first transistor and the collector of the second transistor, and the gate is connected to the output end of the first operational amplifier. The second end of the first resistor is connected to the collector of the first transistor and the base of the second transistor, and the first end of the first resistor serves as the output end of the core circuit. The emitter of the first transistor is connected to the first end of the second resistor and the same input end of the first operational amplifier. The emitter of the second transistor is connected to the first end of the third resistor and the opposite input end of the first operational amplifier. The second end of the second resistor and the second end of the third resistor are respectively connected to the first end of the compensation resistor and the output end of the current compensation circuit, and the second end of the compensation resistor is grounded.

The invention discloses a low-voltage band-gap reference voltage source circuit without an operational amplifier, and belongs to the field of electronic circuits. The circuit comprises a positive temperature coefficient current generation module, a positive temperature coefficient voltage generation module and a reference voltage synthesis module. The positive temperature coefficient current generation module generates positive temperature coefficient current; the positive temperature coefficient voltage generation module generates a first voltage in direct proportion to the temperature; and the reference voltage synthesis module generates a second voltage in direct proportion to the temperature, and adds the second voltage with the negative temperature coefficient voltage to obtain a zero temperature coefficient band-gap reference voltage. Through the structure, the temperature coefficient is effectively reduced; and a cascode current mirror is adopted, so that the power supply rejection ratio of the circuit is improved. Compared with the prior art, an operational amplifier is not adopted, and noise and power supply complexity are reduced.

This application discloses a low-power temperature-compensated RC oscillator, comprising a low-voltage linear buffer, an RC core circuit, a comparator, a Schmitt trigger, a non-overlapping clock generator, and a level shifter. The low-voltage linear buffer uses intrinsic transistors to reduce operating voltage and power consumption; the RC core circuit employs temperature compensation technology, including a series low-temperature drift resistor and a temperature-dependent current source, causing the equivalent resistance to increase with temperature; the comparator compares a triangular wave signal with a reference voltage and outputs a reference clock; the Schmitt trigger filters out clock glitches; the non-overlapping clock generator generates a two-phase clock with dead time to control charging and discharging; and the level shifter converts the low-voltage domain clock to the high-voltage domain. This oscillator eliminates the influence of comparator offset voltage through two-phase switching control and employs low-voltage and temperature compensation technology to achieve a high-precision, low-temperature drift reference frequency in a small area with low power consumption, making it suitable for compact sensing and measurement systems.

The invention discloses a hierarchical alignment method and system for a multi-modal perception data set of a soft manipulator, and the method achieves the coverage of a whole process from data quality evaluation to feature space alignment to semantic consistency optimization through the three-stage design of single-modal noise evaluation, feature-level adaptive alignment and semantic-level constraint alignment. The limitation that a traditional method only pays attention to single-level alignment is broken through, and the model can gradually adapt to the complex characteristics of touch multi-mode perception. Secondly, an adaptive temperature function is designed based on modal pair comprehensive reliability, and a strict monotone mapping relation between temperature coefficients and modal noise characteristics is established, so that a high-noise modal pair automatically obtains a relatively large temperature coefficient to enhance robustness, and a low-noise modal pair automatically obtains a relatively small temperature coefficient to improve alignment precision; the technical problem that the fixed temperature coefficient cannot adapt to the touch multi-mode heterogeneous noise characteristic is fundamentally solved, and end-to-end sensitivity adjustment is achieved through the global learnable self-adaptive adjustment coefficient.

The invention discloses a reference voltage source with a high-order curvature compensation function. The reference voltage source comprises a band-gap core circuit, a common-mode feedback circuit and a high-order curvature correction circuit. The band-gap core circuit is used for generating a reference voltage; the common-mode feedback circuit is used for generating common-mode voltage according to the reference voltage and returning the common-mode voltage to the band-gap core circuit through negative feedback so as to improve the stability of the band-gap core circuit; and the high-order curvature correction circuit is used for extracting current from the band-gap core circuit or injecting current into the band-gap core circuit according to the reference voltage so as to eliminate high-order errors generated by temperature in the band-gap core circuit. According to the invention, high-order curvature compensation can be carried out on the temperature through the high-order curvature correction circuit, so that the precision of the output reference voltage can be effectively improved, the temperature coefficient is reduced, and the temperature stability of the reference voltage is improved. Meanwhile, the circuit structure is simple, the occupied chip area is small, and high practicability is achieved.

The invention relates to the technical field of integrated circuits, in particular to a band-gap reference circuit and electronic equipment, and the circuit comprises a starting module which is used for providing starting current; the band-gap reference voltage source module is connected to the starting module and used for receiving the starting current and the power supply voltage so as to generate an intermediate voltage, and the starting current is used for enabling the band-gap reference voltage source module to leave a zero degeneration state so as to enter a normal working state; and the trimming module is connected to the band-gap reference voltage source module and is used for compensating the temperature coefficient of the band-gap reference voltage source module and generating band-gap reference voltage according to the intermediate voltage. According to the embodiment of the invention, the temperature coefficient of the band-gap reference voltage source module is compensated, so that a lower temperature coefficient is realized in a full temperature range.

The present invention relates to a reference voltage source circuit, a voltage trimming calibration method and a stability compensation method. The circuit comprises: a current source is connected to the emitter of a triode to obtain a node V1, V1 is connected to the inverting input terminal of an operational amplifier, the base and collector of the triode are connected and then grounded; the positive input terminal of the operational amplifier is connected to the gate of a transistor M5 to obtain a node V2, V2 is connected to the drain of M5 and then connected to the gate of a transistor M6 and a first MOS module respectively; the output terminal of the operational amplifier is sequentially connected to transistors M3 and M4, the drain of M3 is connected to the source of M5, the drain of M4 is connected to the source of M6; the drain of M6 is connected to a second MOS module. The present invention constructs a reference voltage source circuit, and performs voltage trimming calibration and stability compensation on it.

The invention provides a multiplexing system of a single-ended to differential signal driver and a detector reading chip, and belongs to the technical field of active electrical nonlinear devices. The system comprises a multi-channel capacitance trans-impedance amplifier, a corresponding ping-pong type switched capacitor sampling hold circuit, a multiplexer, a single-ended to differential signal driver and an ADC (Analog to Digital Converter). A capacitance trans-impedance amplifier of a selected channel receives an X-ray signal responded by a photoelectric sensor, voltage passes through a corresponding switched capacitor sampling holding circuit, and signal charges are stored on a group of holding capacitors; the ADC is connected to the input end of the single-ended to differential signal driver through the multiplexer and performs ADC quantization output; the single-ended to differential signal driver is of a switched capacitor type circuit structure. According to the invention, a unit gain voltage buffer required for driving CTIA output voltage during multi-channel switching is saved, extra noise introduced by Buffer is removed, and power consumption and layout area are reduced.

The invention discloses low-temperature-coefficient copper paste for a high-power device and a manufacturing method thereof, and belongs to the field of electronic paste. The copper paste comprises the following components in percentage by weight: 40wt%-80wt% of copper powder, 0.5 wt%-10wt% of glass powder, 0.05 wt%-5wt% of oxide additive and 15wt%-50wt% of organic carrier, wherein the organic carrier comprises organic resin and an organic solvent. The preparation method comprises the following steps: weighing the components, uniformly mixing the components, and grinding until the average particle size of the copper powder is D50 (0.5-20 microns), the fineness of the tested slurry is less than or equal to 30 microns, and the viscosity range is 80-300 Pa.s, thereby obtaining the copper slurry of the corresponding embodiment. The problems that the temperature coefficient of existing copper paste is high, the accumulated heat effect of a device is remarkably increased under the high-power working condition, the device loses efficacy, and the reliability is reduced are solved. The method is widely applied to the technical field of wiring of low-thermal-resistance high-power component substrates and high-current wires.

The invention relates to the technical field of NdFeB magnets, and discloses a preparation method of the NdFeB magnet. By introducing elements such as Y and Ni, the collocation of magnet elements is optimized, the Curie temperature and coercive force of the NdFeB magnet are significantly improved, the temperature coefficient is reduced, and the disadvantage of poor heat resistance of the NdFeB magnet is improved; a rapid quenching thin strip, hydrogen explosion powder making and calendering forming process are adopted to refine the main phase grains, realize mechanical orientation, and enable the magnet to have higher magnetic properties; the surface of the NdFeB magnetic powder is modified by KH550, and chemical adsorption with the magnetic powder in the form of Si-O-covalent bonds is formed after dehydration and condensation, which is beneficial to improving the adhesion between the magnetic powder and the resin; a polyurethane elastomer binder containing a naphthyl group and a triazine group of a heat-resistant group can form a very stable system with the modified NdFeB magnet, so that the magnet has excellent dimensional stability under a high temperature environment.

The present invention discloses a low resistance temperature coefficient resistor paste for printed circuits of electrical components, which is composed of conductive phase powder, inorganic non-metallic powder, and organic carrier. The conductive phase powder is an alloy prepared by a high-temperature solid phase method of tungsten powder, molybdenum powder, tantalum powder, niobium powder, and manganese powder. The inorganic non-metallic powder is prepared by high-temperature roasting of calcium silicate, magnesium oxide, lanthanum oxide, chromium oxide, titanium dioxide, and nano-silicon dioxide in an air atmosphere. The paste of the present invention is stable and will not precipitate after being stored for 6 months at room temperature. The paste has good thixotropy, is easy to print, does not stick to the screen, and has high resolution. The electrical component prepared by the paste of the present invention has a small resistance temperature coefficient (TCR= (0.05-0.1)×10 ‑3 / ℃), fast heating; electrical components have high power at high temperatures and are energy-saving; the thermal expansion coefficients of the slurry match those of the ceramic substrate, and the electrical components have good thermal shock resistance; the slurry forms a strong bond with the ceramic substrate through the glass phase and chemical bonds, with good adhesion and high reliability of the electrical components.

The utility model discloses a band-gap reference voltage source with high power supply rejection ratio and low offset. The reference voltage source comprises a band-gap core circuit and a pre-voltage-stabilizing circuit. The band-gap core circuit can generate a reference voltage VBG with high precision and low temperature coefficient; the pre-voltage-stabilizing circuit is used for increasing the power supply rejection ratio (PSRR) of the reference voltage VBG. The output reference voltage VBG has the advantages of high power supply rejection ratio, low temperature coefficient, low imbalance, high precision and the like, and is particularly suitable for a high-precision linear Hall sensor.

The present invention relates to a low-power all-MOS self-biased current reference source, belonging to the technical field of reference sources. All circuit elements in the reference source circuit adopt MOS tubes, wherein NMOS tubes working in the deep linear region are used to replace the resistors in the traditional current reference source circuit, and the sizes of PMOS tubes are made uniform. The present invention has the advantages of simple structure, five start-up circuits, small temperature coefficient, low power consumption, etc.

The invention discloses a current generation circuit and a current generation method. The current generation circuit comprises an operation unit, a curvature compensation current unit and a feedback unit. The arithmetic unit is used for generating a first reference current after first-order compensation based on a first current in direct proportion to the temperature and a second current in inverse proportion to the temperature; the curvature compensation current unit is used for generating compensation current based on the first voltage, the first reference voltage and the second reference voltage so as to perform curvature compensation on the first reference current; the feedback unit is used for transmitting second reference current generated after curvature compensation of the first reference current to the curvature compensation current unit. According to the current generation circuit and the current generation method, the first current and the second current are generated under the condition that a thin-film resistor is not used, and the compensation current with the temperature coefficient opposite to that of the first reference current at each temperature point is superposed on the basis of the first reference current for first-order temperature compensation. And the temperature coefficient of the first reference current is further reduced.

A wide-temperature, high-precision optical acceleration sensing chip and acceleration sensor based on the principle of a microcavity interferometer are disclosed. The acceleration sensing chip includes a first substrate, a second substrate, and a third substrate. An optical fiber mounting base and a light-transmitting hole are formed on the first substrate. The chip is characterized by a single-mode optical fiber assembly fixed on the optical fiber mounting base. The end face of the single-mode optical fiber assembly is precision ground and perpendicular to the axis of the optical fiber core. The optical fiber mounting base is a stepped hole with a first stepped portion and a second stepped portion. The single-mode optical fiber assembly includes a glass sleeve disposed on the outer layer and a single-mode optical fiber disposed in the core. The first stepped portion, the second stepped portion, the end face of the glass sleeve, and the end face of the single-mode optical fiber are all perpendicular to the core axis of the single-mode optical fiber. The first stepped portion forms a first fit with the end face of the glass sleeve, and the second stepped portion forms a second fit with the end face of the single-mode optical fiber.

This invention discloses a high-precision bandgap reference circuit, belonging to the field of analog integrated circuit design technology. The BGR circuit includes a power supply voltage input terminal AVDD, a ground terminal GND, PMOS transistors P1-P22, NMOS transistors N1-N14, and bipolar junction pnp transistors Q1-Q4. In this BGR circuit, the sources of PMOS transistors P1, P2, P3, P4, and P5 are connected to the power supply voltage input terminal AVDD. This invention can solve the problems of output voltage deviation and temperature coefficient deterioration caused by device mismatch in traditional bandgap reference structures, and further reduces the temperature coefficient of the bandgap reference output voltage and improves its accuracy by employing second-order curvature calibration technology. This significantly reduces the coverage area required for first-order compensation, improves the accuracy of the bandgap reference output voltage, and improves the temperature coefficient.

The invention discloses a doping preparation method of a high-temperature stable rare earth magnet assembly, and relates to a magnetic material and a preparation technology thereof. Heavy rare earth elements such as terbium and dysprosium are compositely doped into a neodymium iron boron matrix, and technological parameters such as ball milling, compression molding, sintering and magnetic field oriented annealing are optimized, so that the coercive force and magnetic energy product stability of the magnet under a high-temperature working condition are remarkably improved. The method gives consideration to magnetic performance and cost control, is suitable for high-temperature application scenes such as a welding tool magnetic attraction device, effectively solves the problem that the magnetic performance attenuation of a conventional NdFeB magnet at high temperature is fast, improves the high-temperature reliability of the magnet, and prolongs the service life of the magnet.

The present invention belongs to the technical field of NdFeB, and in particular, is a method for preparing NdFeB magnets, including the following selected materials, such as rare earth metal neodymium, metal element iron, non-metallic element boron, and added samarium, niobium, aluminum, copper, nickel and chromium. The melt-quenched NdFeB microcrystalline flakes and preparation method thereof, by adding samarium, nickel and chromium to replace praseodymium, dysprosium and terbium, so that the NdFeB remanence in the present invention can reach 1.35T and low temperature coefficient; the temperature coefficient is -0.02% / ℃, and the use temperature can reach 680℃; it has a high magnetic energy product, at a working temperature of 180℃, its magnetic energy product and temperature stability and chemical stability will be greater than that of NdFeB magnetic materials; it has excellent plasticity and ductility, and can also be made into semi-hard magnetic alloys, and has better characteristics than other magnetic materials, is more resistant to high temperatures, and can maintain magnetic properties without decay when used at a temperature of 400℃.

The application discloses a modified slow-release rare earth alloy, a sintered neodymium-iron-boron magnet and a preparation method thereof. 1‑m X m , m is an atomic percentage content, 35at%<=m<=76at%; wherein, RE is a rare earth element, composed of light rare earth elements and heavy rare earth elements; X is selected from at least one of Ga, In, Si, Ge, Sn, Sb, Bi, S, Se and Te. The modified slow-release rare earth alloy can improve the magnetic performance and high-temperature stability of the sintered neodymium-iron-boron magnet.

This invention proposes a gallium nitride-based semiconductor laser with a graded thermal conductivity waveguide layer. By fitting the In ion intensity distribution or In atom concentration distribution, the transverse phonon velocity distribution, and the thermal conductivity distribution of the graded thermal conductivity upper and lower waveguide layers using SIMS testing, all of these curves satisfy the Stirling function or the LineMod function. The gradient of the transverse TA phonon velocity homogenizes phonon scattering in the lower waveguide layer, reduces thermally induced lattice distortion, avoids optical field mode distortion, and improves the optical field confinement factor. The gradient of the transverse phonon velocity homogenizes the temperature distribution in the upper waveguide layer, changing the thermal stress from concentrated to distributed, reducing phonon transport loss caused by interface scattering. It avoids the "bottleneck effect" of heat flow at the interface between the active region and the lower waveguide layer, further reducing the temperature coefficient of the threshold, accelerating heat flow to the substrate, and preventing thermal runaway caused by increased driving current after exceeding the threshold.

The invention discloses a thin-film resistor with a low resistance temperature coefficient and a preparation method of the thin-film resistor. The resistor comprises a substrate and a resistor structure, and further comprises a deposition layer located between the substrate and the resistor structure, and the deposition layer is of a rough insulation structure and is used for reducing the temperature coefficient of the resistor. The method specifically comprises the following steps of: degreasing a substrate by using a mixed detergent; preparing a nanoparticle suspension by using deionized water, and adjusting the concentration and the pH value of the suspension; using an automatic impregnator to adsorb the nanoparticles onto the substrate, thereby depositing a layer of nanoparticle film; the roughness of the surface of the substrate is controlled in a mode of increasing the number of layers by depositing nano-particles for multiple times, and then sputtering of the thin-film resistor is carried out. The resistance temperature coefficient is reduced in a mode of pre-depositing a layer of insulating material, and the surface roughness after deposition can be accurately controlled through a manufacturing process, so that the resistance value and the TCR of the resistive film are controlled.