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111results about How to "High rejection ratio" patented technology

High mains rejection ratio low dropout voltage linear voltage regulator with feedforward transconductance

InactiveCN101853040AHigh rejection ratioSuppression Ratio OptimizationElectric variable regulationCapacitanceDropout voltage
The invention belongs to the technical field of integrated circuits and specifically relates to a high mains rejection ratio low dropout voltage linear voltage regulator with a feedforward transconductance, which consists of an error amplifier, a buffer, a PMOS pass transistor, a feedforward transconductance, two feedback resistors and a filter capacitor, wherein the error amplifier is a current mirror amplifier consisting of a tail current source, a PMOS input differential pair and three groups of current mirrors. The mains voltage fluctuation influences the output mainly via two paths of the PMOS pass transistor and the parasitic resistor of and PMOS pass transistor. The feedforward transconductance transforms the perturbation of the mains voltage into the perturbation of the current, and then the perturbation of the current is transformed into the in-phase voltage perturbation of the grid of the pass transistor via the parasitic resistor of the error amplifier. The influence of the mains voltage perturbation on the output can be eliminated by the control of the gain of the feedforward transconductance so as to realize high mains rejection ratio. The invention can optimize the mains rejection ratio within a wider range of load current and does not reduce the efficiency of the low dropout voltage linear voltage regulator.
Owner:FUDAN UNIV

Solar blind ultraviolet photoelectric detector based on amorphous gallium oxide film and preparation method thereof

The invention discloses a solar blind ultraviolet photoelectric detector based on an amorphous gallium oxide film and a preparation method thereof, and belongs to the technical field of photoelectricdetectors. The method comprises the steps that the crystal face (0001) Al2O3 is adopted as a substrate, and the substrate is cleaned; then, the cleaned substrate is fed into a settling chamber, a radio frequency magnetic control sputtering technology is applied to the substrate to grow a gallium oxide film; finally, a hollow interdigital mask plate is used for shielding on the amorphous gallium oxide film, a direct current magnetic control sputtering method is adopted for sputtering an interdigital metal electrode on the interdigital mask plate to obtain the solar blind ultraviolet photoelectric detector, the structure is an MSM type sandwiched structure, and the Al2O3 substrate, the amorphous gallium oxide film material and the Ti/Au interdigital metal electrode are arranged from bottom to top. The manufacturing technology is simple, the repeatability is good, dark current is small, the stability is high, the response speed is high, the ultraviolet visible restrain ratio is high, andthe detector conforms to the energy-saving and emission-reducing theory, is suitable for large-scale production, and has the wide development prospect.
Owner:BEIJING UNIV OF POSTS & TELECOMM

Method and device for strengthening atom steam optical filtering signals by combined Raman

The invention discloses a method and a device for strengthening atom steam optical filtering signals by combined Raman. The method combines two characteristics of atom excited Raman gain and Faraday anomalous dispersion effect of atom steam in a single atom steam bubble. The device for realizing the method comprises a narrow band polarization beam splitter, two holophotes, an atom steam bubble with an external magnetic field with a part of size, an aperture slot with adjustable pore size and a pair of Gran Thomson prisms. In the invention, the atom steam optical filtering signals are strengthened by above 10 times in the atom steam bubble with the external magnetic field with a part of size through vertical direction of weak signal light and pump laser polarization and matching frequency, and scattered light and passband external background light of pumping lasers are inhibited by an optical polarization device, therefore, the device has the advantages of high suppression ratio (-105), adjustable optical filtering wavelength and the like. The invention remarkably enhances the atom steam optical filtering characteristic and the detection sensitivity and has important significance to application in the fields of remote laser communication, free space quantum communication and the like.
Owner:WUHAN INST OF PHYSICS & MATHEMATICS CHINESE ACADEMY OF SCI

Sub-threshold full CMOS reference voltage source

The invention discloses a sub-threshold full CMOS reference voltage source. A start-up circuit helps a reference voltage source from getting rid of a degeneration bias point to enter the normal working state. A sub-threshold operation amplifier is ensured to run at low power consumption while being larger in gain at the same time. In this way, the voltage rejection ratio of the power supply is increased. An Nano-ampere reference current generating circuit generates a Nano-ampere-level reference current and suppresses the generation of the noise of the power supply so as to provide a current bias for a reference voltage generating circuit. The reference voltage generating circuit is composed of two MOS tube gate voltage differences of different standard voltages, wherein a reference voltage independent of the temperature is obtained through the coadjustment process. According to the invention, no passive resistor, diode or triode is adopted, and the sub-threshold full CMOS reference voltage source is compatible with the standard CMOS process. Therefore, the layout area is greatly reduced, and the production cost is lowered. The sub-threshold full CMOS reference voltage source is small in power consumption, high in power supply rejection ratio, low in temperature drift coefficient and low in power supply voltage regulation rate.
Owner:GUILIN UNIV OF ELECTRONIC TECH

Transconductance amplifier with low power consumption and high linearity

The invention relates to the technical field of simulative integrated operational amplifiers, in particular to a Push-Pull transconductance amplifier with low power consumption and high linearity. The transconductance amplifier comprises a biasing circuit, a Rail-to-Rail input stage and a Push-Pull output stage which are connected in sequence, wherein the biasing circuit is formed by an image current telescope and is used for providing bias voltage for the Rail-to-Rail input stage and the Push-Pull output stage; the Rail-to-Rail input stage adopts a folding NMOS (N-Channel Metal Oxide Semiconductor) differential pair and a PMOS (P-Channel Metal Oxide Semiconductor) differential pair to realize rail-to-rail in a common-mode input range, and adopts negative feedback of a source electrode to realize linear transconductance; the Push-Pull output stage adopts bias with low power consumption to realize push-pull output with low power consumption, and adopts image current amplification to improve the output driving capacity. The transconductance amplifier has the advantages of simple structure, high linearity, low power consumption, high power supply rejection ratio, small chip area and the like, and is particularly suitable for the transconductance amplifier.
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA

Broadband frequency modulation microwave signal generation method and device based on photonics

The invention discloses a broadband frequency modulation microwave signal generation method based on photonics. The method comprises the following steps: performing optical M-order and optical second-order single sideband modulation on two paths of homologous single-frequency optical carriers by using a microwave local oscillator signal and a baseband / low-frequency electric frequency modulation signal respectively; realizing the cancellation of the optical carrier component by superposing the optical M-order and optical second-order single sideband modulation signals; and converting the superposed optical signal into an electric signal to obtain a broadband microwave signal of which the bandwidth is twice of the frequency modulation range of the baseband / low-frequency electric signal and the central frequency is M times of the frequency of the microwave local oscillator signal. The invention further discloses a broadband microwave signal generation device based on photonics. Frequencymultiplication and up-conversion of baseband / low-frequency electric signals are realized by utilizing a photon technology, and high-frequency-band, large-bandwidth and waveform-reconfigurable frequency-modulated microwave signals can be generated at a relatively low digital-to-analog conversion rate.
Owner:NANJING UNIV OF AERONAUTICS & ASTRONAUTICS

Automatic biasing band-gap reference source

The invention discloses an automatic biasing band-gap reference source. A resistor R3 is connected into a current channel of an NMOS transistor M1 in series, one end of the resistor R3 is connected with the drain of an NMOS transistor M3 and connected with the grids of the NMOS transistor M1 and an NMOS transistor M2, grid bias voltages are provided for the NMOS transistor M1 and the NMOS transistor M2, the other end of the resistor R3 is connected with the drain of a PMOS transistor M5 and connected with the grids of the NMOS transistor M3 and an NMOS transistor M4, and grid bias voltages are provided for the NMOS transistor M3 and the NMOS transistor M4; a resistor R4 is connected into a current channel of the NMOS transistor M2 in series, one end of the resistor R4 is connected with the drain of the NMOS transistor M4 and connected with the grids of the PMOS transistor M5 and a PMOS transistor M6, grid bias voltages are provided for the PMOS transistor M5 and the PMOS transistor M6, the other end of the resistor R4 is connected with the drain of the PMOS transistor M6 and connected with the grids of a PMOS transistor M7 and a PMOS transistor M8, and grid bias voltages are provided for the PMOS transistor M7 and the PMOS transistor M8. The automatic biasing band-gap reference source is not sensitive to the power voltages, high in starting speed, low in power dissipation and temperature coefficient and high in power supply rejection ratio.
Owner:SUZHOU VOCATIONAL UNIV

CMOS reference voltage source without Bipolar transistors

ActiveCN105468085AHigh rejection ratioEliminate the effects of temperature changesElectric variable regulationElectricityHemt circuits
The invention discloses a CMOS reference voltage source without Bipolar transistors. The CMOS reference voltage source comprises a starting circuit which is connected between a power source (VDD) and the ground (GND) in parallel, a CTAT voltage generating circuit, a PTAT voltage generating circuit and a current superposed circuit; the output end of the starting circuit is connected with the CTAT voltage generating circuit and used for making the reference voltage source break away from a degeneracy bias point when a power source powers up; the output end of the CTAT voltage generating circuit is connected with the current superposed circuit; the output end of the PTAT voltage generating circuit is connected with the current superposed circuit; the current superposed circuit is used for superposing a current generated in the CTAT voltage generating circuit and a current generated in the PTAT voltage generating circuit, so that a current source having the zero temperature drift is obtained, and the current source generates the reference voltage (Vref) through an active subcircuit. By the adoption of the CMOS reference voltage source with the mentioned composition, BJT and diodes are not used, influence of temperature variation can be eliminated, complete compatibility with a standard CMOS process is achieved, system cost is effectively lowered, and the CMOS reference voltage source has the advantages of being extremely low in power consumption, high in power supply rejection ratio and good in performance.
Owner:GUILIN UNIV OF ELECTRONIC TECH

Error amplifier circuit

The invention belongs to the technical field of electronics, and relates to an integrated circuit design technology, in particular to a novel current injection/pulling error amplifier circuit. The error amplifier circuit comprises a first transconductance amplifier, a second transconductance amplifier, a first image current source, a second image current source and a first capacitor C1, wherein the input end of the first transconductance amplifier is a first input end Vref of the error amplifier circuit, the output end of the first transconductance amplifier is connected with the first image current source, the input end of the second transconductance amplifier is a second input end Vin of the error amplifier circuit, the output end of the second transconductance amplifier is connected with the second image current source, and the output end of the first image current source and the output end of the second image current source are connected with one end of the first capacitor C1 to serve as an output end Vea of the error amplifier circuit. The error amplifier circuit has the advantages of being capable of adjusting the output voltage, improving the response speed and response accuracy of a system and improving the stability of the system, and is particularly suitable for an error amplifier.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

LDO (Low Dropout Regulator) with wide input voltage range and high power supply rejection ratio

The invention discloses a LDO (Low Dropout Regulator) with a wide input voltage range and a high power supply rejection ratio and belongs to the technical field of power electronics. The LDO comprisesan error amplifier, a power module, a pre-step-down module, a high voltage resistant module and a power supply rejection ratio enhancement module, wherein the pre-step-down circuit module is utilizedfor preprocessing an input voltage of the LDO to obtain a low power supply voltage used for supplying power to a low-voltage circuit part; power is supplied to the error amplifier and the high voltage resistant module so as to obtain a high power supply rejection ratio by utilizing the low power supply voltage, and the input voltage range of the LDO is widened by virtue of the high voltage resistant module; meanwhile, by utilizing the power supply rejection ratio enhancement module inside the LDO circuit, the power supply rejection ratio of the LDO at a high frequency end is further improved;finally the input voltage of the LDO is processed by utilizing the power module, a feedback voltage is obtained to control a positive input end of the error amplifier so as to obtain enough loop gainfor improving the output accuracy of the LDO, and the output voltage of the power module is a final output voltage of the LDO. The LDO disclosed by the invention is wide in input range, small in chipoccupied area and high in power supply rejection ratio.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
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