278 results about "Band rejection" patented technology

The invention relates to a miniaturized millimeter wave filtering magnetoelectric dipole antenna with high out-of-band rejection, and relates to the technical field of communication antennae, and the miniaturized millimeter wave filtering magnetoelectric dipole antenna with the high out-of-band rejection effect comprises a strip line feed structure which is used for generating a lower stop band radiation zero point; the n-shaped feed structure is used for feeding the magnetoelectric dipole; according to the magnetoelectric dipole radiator, a U-shaped groove is etched in a dipole patch, so that the size of the antenna is reduced; the parasitic metal strips are used for enhancing the radiation suppression effect of the upper stop band; the folding split rings are folded to reduce the size of the split rings and enhance the radiation suppression effect of the lower stop band at the same time; the inverted L-shaped short circuit branch is used for enhancing the radiation suppression effect of the upper stop band, the absolute bandwidth of the antenna is 21.1 GHz to 31.0 GHz, the relative bandwidth is 37.0%, the lowest gain is 5.0 dBi, the highest gain can reach 7.8 dBi, the suppression level from the in-band highest gain to the radiation zero point of the upper stop band is larger than 40 dBi, and the suppression level from the in-band highest gain to the radiation zero point of the lower stop band is larger than 50.0 dBi.

The invention discloses an ultra-low profile broadband circularly polarized microstrip patch antenna array and a design method thereof, the antenna array is constructed on a single-layer thin dielectric substrate, and an antenna unit is formed by combining a substrate integrated waveguide resonant cavity and a microstrip patch resonator embedded in the center of the substrate integrated waveguide resonant cavity. On the premise that the antenna size is not increased, the combination of the double resonators is realized. The adjacent antenna units are arranged at zero intervals and share the metal columns surrounding the edge of the substrate integrated waveguide resonant cavity. Two pairs of polarization orthogonal degenerate modes with similar resonance characteristics are introduced by utilizing a central gap, an annular gap and four symmetrical gaps connected with the central gap and the annular gap, so that four resonance points with similar radiation characteristics and similar resonance frequencies and two axial ratio zero points are formed, and synchronous broadening of impedance bandwidth and axial ratio bandwidth is realized. In addition, a radiation zero point is generated at the position close to the upper edge of the passband along the radiation counteracting effect on the two sides of the annular gap, and therefore the out-of-band rejection performance of the antenna is improved.

The invention relates to the technical field of antennas, in particular to a high-isolation double-frequency common-caliber miniaturized phased-array antenna which comprises a high-frequency-band linear polarization end-fire metal patch array structure, a low-frequency-band linear polarization end-fire metal patch array structure, a public metal reflection floor and a single-layer dielectric substrate. Radiation structures of the high-frequency-band linear polarization end-fire metal patch array structure and the low-frequency-band linear polarization end-fire metal patch array structure are formed by improved dipoles of microstrip balun feed with out-of-band rejection, so that linear polarization is achieved, and then the dipoles are fed through the improved microstrip balun with out-of-band radiation rejection. The suppression on high frequency is further deepened and the decoupling bandwidth is expanded; in addition, a decoupling structure is added between the adjacent common-frequency antennas to improve the isolation and radiation capability between the adjacent common-frequency antenna units, high isolation and wide beam coverage of the dual-frequency common-aperture phased-array antenna can be realized, the performance of the antenna is improved, and the dual-frequency common-aperture phased-array antenna is simple in process and low in cost.

A differential feed dual-frequency dual-polarization microstrip filtering antenna comprises three layers of dielectric substrates which are arranged at intervals from top to bottom, and an octagonal annular coupling parasitic structure is loaded on the lower surface of the first layer of dielectric substrate; a rectangular radiation patch is printed on the upper surface of the second dielectric substrate and is loaded with four non-closed rectangular gaps which are distributed in a square shape and are mutually rotationally symmetrical. A cross-shaped parasitic branch knot and four L-shaped symmetrical open-circuit branch knots which are distributed in a rhombus shape and extend outwards along the diagonal direction of the rhombus are printed on the lower surface of the second dielectric substrate layer; the lower surface of the third dielectric substrate is a metal floor; the second layer of dielectric substrate and the third layer of dielectric substrate are connected through a coaxial feeder line; according to the dual-frequency dual-polarization filtering antenna, the mode of combining the differential feed technology and the microstrip antenna is adopted, the design of the dual-frequency dual-polarization filtering antenna with four radiation zero points is achieved, the antenna has good edge selectivity and good out-of-band rejection capacity, in-band gain is stable, and a directional diagram has good symmetry and directionality.

The utility model provides an IPD-integrated bulk acoustic wave filter and wireless communication equipment, and relates to the technical field of semiconductors. The bulk acoustic wave filter integrated with the IPD comprises a substrate, an acoustic wave reflection structure arranged on the substrate, a film bulk acoustic wave resonator, a parallel plate capacitor and a planar inductor, the film bulk acoustic wave resonator is located above the acoustic wave reflection structure, and the planar inductor is located between the film bulk acoustic wave resonator and the parallel plate capacitor. And the thin film bulk acoustic resonator and the parallel plate capacitor are electrically connected with each other. According to the bulk acoustic wave filter integrated with the IPD, the IPD technology is integrated into the BAW technology, and the integration level and the area utilization rate of the filter are greatly improved. A resonance circuit of the IPD is designed to generate an extremely wide passband, then the bulk acoustic wave resonators are designed, and the frequency of the bulk acoustic wave resonators falls on the two sides of the passband to improve roll-off of the filter, so that the wide passband can be generated, and the good out-of-band rejection effect can be achieved. In addition, by adopting the planar inductor, the technological process of the inductor structure is greatly simplified.

The present invention discloses a broadband high-steepness filter based on the embedding of a piezoelectric acoustic resonator and an LC passive circuit, which includes a ladder-type filtering network and an LC resonance network. The ladder-type filtering network and the LC resonance network are connected in series in sequence, or the ladder-type filtering network and the LC resonance network are connected in series at intervals in sequence. The ladder-type filtering network includes a filtering series main path and a plurality of filtering parallel branches. The first end of the filtering series main path serves as the input end, and both ends of the filtering parallel branches are respectively connected to the ground wire and the series main path. At least one series hybrid resonance unit is arranged on the filtering series main path, and the series hybrid resonance unit is used to form poles in the passband to expand the passband bandwidth. At least one acoustic resonator or parallel hybrid resonance unit is arranged on the filtering parallel branch. This filter can achieve a relatively high bandwidth, a relatively high out-of-band rejection, and a relatively narrow transition band.

The invention discloses a high-abrupt-drop high-out-of-band rejection bulk acoustic wave filter circuit structure, which comprises a high-abrupt-drop circuit and a high-out-of-band rejection circuit, and is characterized in that the output end of the high-abrupt-drop circuit is connected with the high-out-of-band rejection circuit in series; the high-steep-drop circuit is a passive device externally expanded on a Ladder bulk acoustic wave filter circuit, and transmission zero point stepped distribution of a near-transmission band is realized; and the high out-of-band rejection circuit is used for externally expanding an inductor on the Ladder bulk acoustic wave filter circuit so as to construct a new transmission zero point of a specific frequency band at the far end of a transmission band to realize high out-of-band rejection. The circuit not only can realize high out-of-band rejection, but also can avoid the occurrence of a large peak at a near transmission band.

The invention relates to a wide-stop-band cavity inverting filtering power divider, which comprises a metal cavity, a three-stage resonator arranged in the metal cavity, an input terminal and two output terminals, the three-stage resonator is formed by cascading three double-ridge waveguide resonators, and the two output terminals are arranged in the metal cavity. Adjacent double-ridge waveguide resonators are coupled through an evanescent mode rectangular waveguide, the coupling strength between the resonators can be adjusted through the width of the evanescent mode rectangular waveguide, the width of the evanescent mode rectangular waveguide is smaller than the width of the metal cavity, and the second-stage double-ridge waveguide resonator forms cross coupling with a source and a load. And cross coupling is formed between the first-stage double-ridge waveguide resonator and the third-stage double-ridge waveguide resonator. The inverted filtering power divider is designed by adopting the double-ridge waveguide and the evanescent mode rectangular waveguides with unequal section widths, the size of the device is reduced, a zero point is introduced into an upper stop band, and the depth of out-of-band rejection is improved. In addition, a metal plate is inserted in the middle of the cavity of the filtering power divider, the upper stop band width is expanded, and good out-of-band performance is achieved.

The invention discloses a surface acoustic wave filter capable of reducing spurious signals, and the surface acoustic wave filter employs an impedance element structure, and is a single-ended input / output structure. The surface acoustic wave filter comprises a plurality of surface acoustic wave resonators, and the plurality of surface acoustic wave resonators are connected together in series and in parallel at the same time. And the Rayleigh wave resonant frequency of one surface acoustic wave resonator in the two surface acoustic wave resonators at the symmetrical positions is equal to the Rayleigh wave anti-resonant frequency of the other surface acoustic wave resonator. According to the invention, the half wavelengths of the two parallel resonators at the symmetrical positions are finely tuned, so that the frequencies of the two resonators are finely tuned and staggered, the frequency of one resonator just falls on the anti-resonator frequency of the other resonator, and spurious parasitic signals are effectively suppressed through positive and negative superposition. Therefore, the low-end out-of-band rejection of the surface acoustic wave filter is improved.

The utility model discloses a broadband terahertz waveguide band-pass filter with high out-of-band rejection. The broadband terahertz waveguide band-pass filter comprises an input waveguide, an output waveguide and a plurality of first band elimination elements, the input waveguide serves as the input end of the broadband terahertz waveguide band-pass filter, the output waveguide serves as the output end of the broadband terahertz waveguide band-pass filter, the width of any one of the first band-stop elements is smaller than the width of the input waveguide and the width of the output waveguide, and the width of any one of the first band-stop elements is smaller than that of the output waveguide. The plurality of first band-stop elements are sequentially arranged between the input end and the output end to form a high-frequency stop band of the broadband terahertz waveguide band-pass filter; therefore, a brand-new band-stop element branch structure is adopted to form a high-frequency stop band of the filter, so that the filter has a transmission zero point outside the high-frequency band, and meanwhile, the filter has the advantages of high out-of-band rejection and high bandwidth; therefore, the terahertz radio frequency transmission device is very suitable for large-scale application and popularization in the terahertz radio frequency transmission field.

The invention discloses a high out-of-band rejection single-layer broadband SIW filter antenna, which comprises a rectangular SIW cavity which is formed on a dielectric substrate and has a plurality of resonant modes, and a first group of short-circuit needles which are used for dividing the rectangular SIW cavity into a left resonant cavity and a right resonant cavity which resonate in a first resonant mode are loaded in the rectangular SIW cavity; a hexagonal groove is etched in the top surface of a left resonant cavity of the rectangular SIW cavity, and a hexagonal microstrip patch resonating in a second resonant mode is embedded in the hexagonal groove; a second group of short-circuit pins used for dividing the right resonant cavity into a first resonant cavity resonating in a third resonant mode and a second resonant cavity resonating in a fourth resonant mode are loaded in the right resonant cavity, a rectangular groove is etched in the top surface of the second resonant cavity of the rectangular SIW cavity, and a U-shaped groove is etched in the position, corresponding to the rectangular groove, of the bottom surface of the second resonant cavity of the rectangular SIW cavity; two radiation zero points are introduced out of band, the filtering characteristic of high out-of-band rejection is achieved, and meanwhile the gain is improved.

The invention discloses a filter and a preparation method of the filter. A piezoelectric layer is provided with an opening in a connection area of adjacent series bulk acoustic resonators and parallel bulk acoustic resonators. A dielectric layer of the capacitor is filled in the opening. The series bulk acoustic resonator further comprises a first lower electrode located on the side, close to the substrate, of the piezoelectric layer and a first upper electrode located on the side, away from the substrate, of the piezoelectric layer, and the parallel bulk acoustic resonator comprises a second lower electrode located on the side, close to the substrate, of the piezoelectric layer and a second upper electrode located on the side, away from the substrate, of the piezoelectric layer. The capacitor includes a third lower electrode and a third upper electrode located in the connection region. The third upper electrode is electrically connected with the first upper electrode and the second upper electrode, and the third lower electrode is electrically connected with the second lower electrode. Thus, the capacitors are connected in parallel in the connecting areas of the adjacent series bulk acoustic resonators and the parallel bulk acoustic resonators, on one hand, in-band insertion loss and out-of-band rejection of the filter can be effectively improved, and on the other hand, redundant chip space is not occupied.

The invention belongs to the technical field of microwave circuits, and particularly provides a Z-shaped four-order small band-pass filter based on a quarter mode, so as to realize the performance characteristics of small size, light weight and high out-of-band rejection of the band-pass filter. The invention comprises a port coupling structure, namely an input coaxial port and an output coaxial port; the embedded tuning structure comprises a first tuning blind hole, a second tuning blind hole, a third tuning blind hole and a fourth tuning blind hole; a U-shaped windowing coupling structure; the through holes are positive symmetric short windowing through holes and oblique symmetric long windowing through holes; the Z-shaped filter cavity structure is a cavity with a silver-plated surface. According to the four-order band-pass filter, the high-dielectric-constant material is combined with partial surface silver plating of the cavity, so that a virtual magnetic wall is formed on the non-silver-plated surface to realize a quarter-mode working mode, and tuning and windowing coupling structures are combined to form the four-order band-pass filter. Due to the novel design thought, compared with a traditional full-mode band-pass filter, the full-mode band-pass filter has the advantages that the size and the weight are reduced by about 75%. The invention can be used in communication systems and millimeter wave related applications.

The invention discloses a wide-stop-band reflection-free double-frequency filter, particularly relates to the technical field of microwave communication, and solves the problems that in the prior art, a double-frequency-band filter usually has signal reflection outside a working frequency band, and a small number of reflection-free double-frequency-band or multi-frequency-band filters are often complex in structure and low in cost. The technical problems of large size, poor absorption effect and poor high-stop-band effect of a non-reflection dual-band filter in the prior art, and certain out-of-band rejection performance and insertion loss are sacrificed while the non-reflection dual-band filter pursues the non-reflection characteristic, and particularly, harmonic suppression is poor in a transition area of two frequency bands and a high-stop-band area are solved. According to the technical scheme, a quarter-wavelength coupling microstrip line MCL1 and a quarter-wavelength microstrip line ML2 are connected in series, and a three-quarter-wavelength microstrip line ML1 and a three-quarter-wavelength microstrip line ML2 are introduced and connected in parallel to form a dual-frequency band-pass filtering response; according to the invention, a good full-band absorption effect is achieved, and the frequency selectivity of in-band signals is also enhanced.

The invention discloses a multi-frequency amplification device. The device comprises a plurality of matching networks with different frequency bands, a preceding-stage driving amplification module and an output-stage amplification module, the matching networks, the preceding-stage driving amplification module and the output-stage amplification module form a multi-band radio frequency signal channel; each frequency band radio frequency input signal correspondingly passes through each multi-frequency band radio frequency signal channel to output each frequency band radio frequency amplification signal; wherein the matching network of each frequency band realizes the required matching impedance in the respective working frequency band, and has the out-of-band rejection characteristic in other working frequency bands. According to the scheme, the multi-band ultra-large bandwidth output is realized by arranging a plurality of matching networks with different frequency bands, and the physical limitation of the bandwidth bottleneck in the prior art is broken through.

The invention relates to an S-band high-reliability patch filtering antenna, and belongs to the technical field of filtering antennas. The antenna comprises a metal floor, a bottom dielectric substrate and a top dielectric substrate which are sequentially stacked from bottom to top. Wherein the upper surface of the top dielectric substrate is provided with a coplanar coupling structure and a rectangular driving patch provided with a U-shaped groove, and a broadband and a low-frequency radiation zero point are generated; and a rectangular branch is arranged on the lower surface of the top dielectric substrate to generate a high-frequency radiation zero point. The patch filter antenna further comprises a microstrip line used for coaxial feed, and the microstrip line penetrates through the metal floor and the bottom dielectric substrate and is connected with the rectangular branch on the lower surface of the top dielectric substrate. High reliability is achieved through the double-layer dielectric substrate, structure simplification and low cost are achieved through the plane structure, and the working bandwidth, out-of-band rejection and the rectangular coefficient of the patch filter antenna are improved through reasonable arrangement of the parasitic patches.

The invention belongs to the technical field of microwave integrated circuit chip design, and discloses an integrated passive device filter based on a TGV process. The integrated passive device filter comprises a GSG signal port, a three-dimensional inductor and a capacitor. The dielectric substrate is made of a glass material, so that the dielectric loss of the device can be reduced; a three-dimensional inductance structure mode is adopted, so that the Q value of the filter can be improved; a physical symmetric structure is adopted, so that cross mixing coupling of non-adjacent resonant circuits is easy to realize to improve out-of-band rejection performance; the integrated passive device is realized in a TGV process mode, high integration and miniaturization can be realized, the integrated passive device can be integrated in a radio frequency receiving and transmitting module in a chip flip-chip bonding or bonding mode, the packaging area and the wiring length are reduced, and meanwhile, the signal delay and the power consumption are reduced.

A multi-band acoustic multiplexer filter circuit is provided. The multi-band acoustic multiplexer filter circuit includes multiple single-band acoustic filters and a multi-band filter circuit that can pass a signal in multiple passbands. In embodiments disclosed herein, the single-band acoustic filters and the multi-band filter circuit can be configured to collectively attenuate the signal in some of the passbands to thereby prevent the signal from becoming a blocking signal to any other passbands (e.g., adjacent passbands). By employing the multi-band filter circuit to provide a portion of the required attenuation to the blocking signal, each of the single-band acoustic filters can be subject to more relaxed attenuation requirements, thus making it possible to reduce complexity of the single-band acoustic filters and improve overall band rejection performance of the multi-band acoustic multiplexer filter circuit.

The invention relates to a surface acoustic wave resonator, a filter, a multiplexer and a radio frequency front-end module. In the surface acoustic wave resonator, at least one of the reflection structures of the surface acoustic wave resonator is modulated, so that the distance between the center lines of the two adjacent reflection electrodes in the reflection structures fluctuates by taking the reflection group as the unit, thereby inhibiting the fluctuation near the upper frequency point of the surface acoustic wave resonator, and improving the performance of the resonator. Besides, the filter provided by the embodiment of the invention comprises the surface acoustic wave resonator, so that the passband performance of the filter can be improved, and particularly, the passband flatness and the out-of-band rejection level can be improved.

The invention provides an optimization method of a surface acoustic wave filter and the surface acoustic wave filter, and the optimization method comprises the following steps: taking the insertion loss of the surface acoustic wave filter as a first optimization target, optimizing a dual-mode surface acoustic wave filter, and obtaining a first optimization result; by taking out-of-band rejection of the surface acoustic wave filter as a second optimization target, optimizing the geometric parameters of the interdigital transducer to obtain a second optimization result; optimizing the capacitance value of the capacitor and the inductance value of the inductor by taking the standing-wave ratio and the ripple of the surface acoustic wave filter as a third optimization target to obtain a third optimization result; and optimizing the surface acoustic wave filter by taking the insertion loss index, the out-of-band rejection index, the standing-wave ratio index and the ripple index of the surface acoustic wave filter as fourth optimization targets to obtain a fourth optimization result. According to the optimization method, the labor cost can be reduced, the probability of falling into a local optimal solution can be reduced, the convergence speed of optimization is improved, and the optimization time is shortened.

A multi-frequency low noise amplifier includes an input matching network, an amplifying circuit and an output matching network. The input matching network includes a first out-of-band rejection circuit and a first frequency band selection circuit. The output matching network includes a second out-of-band rejection circuit and a second frequency band selection circuit. The first out-of-band rejection circuit can reject signal of any frequency band in the radio frequency signals so that signals of the remaining frequency bands can pass through. The first frequency band selection circuit can screen out the signals of reference frequency spots from the remaining frequency bands. The second frequency band selection circuit can screen out the signals of partial frequency spots from the amplified signals of reference frequency spots. The second out-of-band rejection circuit can reject the signal of any frequency spot in the signals of partial frequency spots.

The invention discloses a broadband wearable filter antenna with a high out-of-band rejection level and a wireless communication device, the antenna is composed of two layers of flexible dielectric substrates (a first dielectric substrate and a second dielectric substrate), a polydimethylsiloxane material is adopted, a rectangular radiation patch is loaded on the upper surface of the first dielectric substrate, a radiation zero point is introduced at a low frequency by loading an open annular groove, and the upper surface of the first dielectric substrate is provided with a first dielectric layer and a second dielectric layer; a high-frequency radiation zero point is introduced by loading the T-shaped strip on the upper surface of the second dielectric substrate, the high-frequency out-of-band rejection level is improved by loading the transverse rectangular groove and the longitudinal rectangular groove in the rectangular radiation patch, and the bandwidth is widened through loading of the open annular groove and the T-shaped strip. The antenna is integrally designed to be flexible, is suitable for wearable equipment, and still meets performance requirements after a human body tissue model is loaded. According to the invention, high out-of-band rejection level and broadband filtering performance are realized at the same time.

The invention relates to a tunable filter bank for enhancing out-of-band rejection. The tunable filter bank comprises a first path switching module, a first filter bank, a second path switching module, a third path switching module, a second filter bank and a fourth path switching module, the first path switching module, the second path switching module, the third path switching module and the fourth path switching module are sequentially connected, and the first filter bank is connected between the first path switching module and the second path switching module. And the second filter bank is connected between the third path switching module and the fourth path switching module. The circuit can be equivalent to one or more of a high-pass filter, a low-pass filter, a transmission line and a band-pass filter, can process signal waveforms in different frequency band ranges, and has the characteristics of high control precision and high reliability.

The invention discloses a broadband high-steep-drop filter based on embedding of a piezoelectric acoustic resonator and an LC passive circuit, and the filter comprises a stepped filter network and an LC resonant network, the stepped filter network and the LC resonant network are sequentially connected in series, or the stepped filter network and the LC resonant network are sequentially connected in series at intervals; the stepped filter network comprises a filter series trunk and a plurality of filter parallel branches, a first end of the filter series trunk is used as an input end, and two ends of the filter parallel branches are respectively connected to a ground wire and the series trunk; at least one series-connection mixed resonance unit is arranged on the filtering series-connection trunk and is used for forming a pole in a passband to expand the bandwidth of the passband; the filtering parallel branch is provided with at least one acoustic resonator or a parallel hybrid resonance unit. The wave filter can realize relatively high bandwidth, relatively high out-of-band rejection and relatively narrow transition zone.

The invention discloses a millimeter wave filtering antenna and an intelligent aided design method, the antenna adopts a differential aperture coupling feed mode to realize relatively wide impedance matching bandwidth and relatively high gain, low-frequency and high-frequency radiation zero points are respectively generated by adding a short circuit patch and slotting a radiation patch, and out-of-band gain suppression is realized. The out-of-band rejection level of a low-frequency band and the out-of-band rejection level of a high-frequency band are improved by adopting the planar inverted-F antenna and adding the parasitic Deep learning is adopted on a machine learning algorithm, a proxy model of selected antenna structure parameters and corresponding performance parameters is established, rapid prediction of antenna performance of a specific parameter structure is realized, a genetic algorithm is adopted to optimize the proxy model, an antenna structure corresponding to a target performance parameter is rapidly designed, and the method has the advantages of high efficiency, flexibility and expandability. The design efficiency and performance are improved, the design cost is reduced, and the antenna structure has the characteristics of low loss, high gain and high reliability.

The invention relates to a filter, a multiplexer, a radio frequency front-end module and electronic equipment. The filter comprises a substrate and a plurality of series resonators arranged on the substrate at intervals, the substrate comprises a signal input end, a signal output end and a grounding terminal, the signal input end is used for receiving external signals, the signal output end is used for outputting the external signals, and the series resonators are sequentially connected between the signal input end and the signal output end in series; wherein each series resonator comprises an interdigital transducer and reflecting gratings located on the two sides of the interdigital transducer, and the reflecting grating on at least one side of each interdigital transducer is electrically connected with the grounding terminal through a metal layer. According to the filter, the reflecting grating of the series resonator is grounded through the metal layer, so that the reflecting grating is in a zero potential state. Therefore, signal attenuation is reduced, and the out-of-band rejection capability and isolation of the filter are improved.

The invention discloses a bulk acoustic wave filter and a duplexer. The bulk acoustic wave filter comprises an input terminal, an output terminal, a first type resonator and a second type resonator, the first type resonator is arranged in series between the input terminal and the output terminal; one end of the second type resonator is connected between the input terminal and the output terminal, and the other end of the second type resonator is grounded; each of the first resonator, the first sub-resonator and the second sub-resonator comprises a bottom electrode, a piezoelectric layer, a top electrode and a boundary ring structure; along the thickness direction of the bulk acoustic wave filter, the boundary ring structure is overlapped with the edge of the top electrode; the thickness of the first resonator inner boundary ring structure is different from the thickness of the first sub-resonator inner boundary ring structure, and is different from the thickness of the second sub-resonator inner boundary ring structure. By adopting the technical means, through setting the thicknesses of the inner boundary ring structures of the resonators of different types, the out-of-band rejection can be improved, and the performance of the bulk acoustic wave filter can be improved.

The utility model provides an auxiliary device for an L wave band test. According to the auxiliary device for the L wave band test, an installation shell is installed at the position, close to one side, of the top of a test board, an input head is installed on one side of the installation shell through an input line, a driving amplifier is installed at the other end of the input line, and the output end of the driving amplifier is connected with the input end of a final amplifier; and the output end of the final-stage amplifier is connected with the input end of the directional coupler. According to the auxiliary device for the L wave band test, better linearity and larger dynamic range are achieved through the design method, better harmonic wave, clutter suppression, gain flatness and intermodulation indexes can be obtained, the L wave band test frequency source generates two paths of signal output, the two paths of signals can be controlled through the upper computer, and the test accuracy is improved. The frequency consistency and the power consistency are good, good out-of-band rejection is achieved, and the accuracy of L-band test data is improved.

The invention discloses a tunable band elimination filter based on a quantum well structure photon time crystal and a method. The tunable band elimination filter comprises the quantum well structure photon time crystal; the quantum well structure photon time crystal comprises a first photon time crystal section, a time domain quantum well section and a second photon time crystal section which are connected in sequence; when an electromagnetic signal is propagated, the electromagnetic signal sequentially passes through the first photon time crystal section, the time domain quantum well section and the second photon time crystal section, so that a stable band gap region and a controllable resonance response are formed in a momentum space; a fitting relation between a local state equivalent wave vector and a time structure parameter is established by adjusting a time section proportion parameter and a refractive index contrast ratio in a quantum well structure photon time crystal, so that the local state quantity and momentum position of an electromagnetic signal are regulated and controlled; and frequency spectrum regulation of the electromagnetic signal is realized through a corresponding relation between the momentum space and the frequency domain space. The frequency spectrum regulation and control precision and the system stability are improved.

The invention discloses a broadband external suppression filtering antenna, which relates to the technical field of antennas and comprises a multimode resonant structure, and a metal layer I, a dielectric layer I, a metal layer II, a dielectric layer II, a dielectric layer III and a floor which are connected in sequence, a plurality of first metal through holes penetrating through the second dielectric layer are formed in the second dielectric layer, a plurality of second metal through holes penetrating through the third dielectric layer are formed in the third dielectric layer, the first metal through holes correspond to the second metal through holes in a one-to-one mode, and the first metal through holes are communicated with the corresponding second metal through holes to form longitudinal through holes. The second metal layer, the floor and all the longitudinal through holes jointly define an SIW cavity. The multi-mode resonance structure is arranged between the dielectric layer II and the dielectric layer III, the multi-mode resonance structure is arranged in the SIW cavity, and an excitation through hole penetrating through the multi-mode resonance structure is formed in the multi-mode resonance structure. The filter antenna has wider out-of-band rejection, and the miniaturization design of the filter antenna can be realized.