125 results about "Band rejection" patented technology

The invention relates to an S-band high-reliability patch filtering antenna, and belongs to the technical field of filtering antennas. The antenna comprises a metal floor, a bottom dielectric substrate and a top dielectric substrate which are sequentially stacked from bottom to top. Wherein the upper surface of the top dielectric substrate is provided with a coplanar coupling structure and a rectangular driving patch provided with a U-shaped groove, and a broadband and a low-frequency radiation zero point are generated; and a rectangular branch is arranged on the lower surface of the top dielectric substrate to generate a high-frequency radiation zero point. The patch filter antenna further comprises a microstrip line used for coaxial feed, and the microstrip line penetrates through the metal floor and the bottom dielectric substrate and is connected with the rectangular branch on the lower surface of the top dielectric substrate. High reliability is achieved through the double-layer dielectric substrate, structure simplification and low cost are achieved through the plane structure, and the working bandwidth, out-of-band rejection and the rectangular coefficient of the patch filter antenna are improved through reasonable arrangement of the parasitic patches.

The invention discloses a tunable band elimination filter based on a quantum well structure photon time crystal and a method. The tunable band elimination filter comprises the quantum well structure photon time crystal; the quantum well structure photon time crystal comprises a first photon time crystal section, a time domain quantum well section and a second photon time crystal section which are connected in sequence; when an electromagnetic signal is propagated, the electromagnetic signal sequentially passes through the first photon time crystal section, the time domain quantum well section and the second photon time crystal section, so that a stable band gap region and a controllable resonance response are formed in a momentum space; a fitting relation between a local state equivalent wave vector and a time structure parameter is established by adjusting a time section proportion parameter and a refractive index contrast ratio in a quantum well structure photon time crystal, so that the local state quantity and momentum position of an electromagnetic signal are regulated and controlled; and frequency spectrum regulation of the electromagnetic signal is realized through a corresponding relation between the momentum space and the frequency domain space. The frequency spectrum regulation and control precision and the system stability are improved.

The invention discloses a broadband external suppression filtering antenna, which relates to the technical field of antennas and comprises a multimode resonant structure, and a metal layer I, a dielectric layer I, a metal layer II, a dielectric layer II, a dielectric layer III and a floor which are connected in sequence, a plurality of first metal through holes penetrating through the second dielectric layer are formed in the second dielectric layer, a plurality of second metal through holes penetrating through the third dielectric layer are formed in the third dielectric layer, the first metal through holes correspond to the second metal through holes in a one-to-one mode, and the first metal through holes are communicated with the corresponding second metal through holes to form longitudinal through holes. The second metal layer, the floor and all the longitudinal through holes jointly define an SIW cavity. The multi-mode resonance structure is arranged between the dielectric layer II and the dielectric layer III, the multi-mode resonance structure is arranged in the SIW cavity, and an excitation through hole penetrating through the multi-mode resonance structure is formed in the multi-mode resonance structure. The filter antenna has wider out-of-band rejection, and the miniaturization design of the filter antenna can be realized.

The invention provides a frequency hopping band elimination filter which comprises a coaxial resonant cavity, a metal resonant column arranged in the coaxial resonant cavity and a digital capacitor array used for frequency tuning. The digital capacitor array comprises a plurality of capacitor chip sets, each capacitor chip set comprises a plurality of capacitor chips, each capacitor chip comprises an upper electrode and a lower electrode which are oppositely arranged, the lower electrodes are directly welded on the end surfaces of the metal resonant columns, the upper electrodes are connected with bonding wires, and the bonding wires are connected with the metal resonant columns. The bonding wire is used for being electrically connected with a control circuit. The digital capacitor is connected with the metal resonance column and the control circuit in a direct welding and gold wire bonding mode, lower and more stable insertion loss is achieved in the aspect of electrical performance, and extremely high connection consistency is ensured in the aspect of mechanical reliability; and a solid physical foundation is laid for the frequency hopping stop-band filter to realize high-Q-value, high-precision and high-reliability frequency tuning in the S wave band.

The invention discloses a band-pass filter structure packaging method based on an RDL technology, and relates to the technical field of electronic engineering and semiconductor packaging. An RDL layer is constructed on the surface of a chip of a band-pass filter structure, a chip connecting device in a band-pass filter is connected with the chip, a local shielding layer is laid on the surface of the chip of the band-pass filter, a chip module and a band-pass filter function module are subjected to glue pouring packaging and connection, and a complete band-pass filter function module is constructed; and the band-pass filter function module is placed in the lower shell, the upper shell is buckled, secondary glue pouring packaging is carried out, and packaging of the band-pass filter structure is completed. The packaging efficiency and the yield of the band-pass filter are improved by adopting a staged glue filling and modular manufacturing mode. An asymmetric resonance unit layout is provided, an electromagnetic band gap (EBG) structure is formed in combination with a grounding through hole array, the high-frequency (more than 60 GHz) out-of-band rejection ratio is enhanced, and the use effect of the band-pass filter is improved.

The invention belongs to the technical field of integrated circuit manufacturing and filters, and discloses a surface-mounted double-layer stacked microstrip band-pass filter. The filter comprises an upper metal layer, an upper substrate, a middle metal layer, a lower substrate and a lower metal layer which are sequentially arranged from top to bottom. A double-layer stacking method is adopted, the multi-order resonators are placed on the lower layer substrate, the upper layer metal layer, the side wall metalized through holes and the lower layer metal layer form a metal cavity structure, and the size of the filter is remarkably reduced; the multi-order resonator adopts a stepped impedance resonator structure, so that a low-frequency end zero point generated by high-order mode coupling can be effectively used, and better out-of-band rejection can be obtained; a ceramic substrate or a glass substrate with a relatively large dielectric constant is selected, so that the high-frequency loss of a passive device is remarkably reduced, and the quality factor is improved.

The invention discloses a dual-polarization band-pass three-dimensional frequency selective surface which comprises a plurality of unit structures arranged in a matrix on a two-dimensional plane. Each unit structure comprises a square metal column, a first square medium cylinder attached to the peripheral surface of the square metal column, and a second square medium cylinder attached to the peripheral surface of the first square medium cylinder; a first groove and a second groove which are crossed are symmetrically formed in the upper surface and the lower surface of the square metal column; the first square medium cylinder comprises four first side walls, the surface, far away from the square metal column, of each first side wall is a layer of metal patch, and the center of each first side wall is embedded into a first metal cylinder; the second square medium cylinder comprises four second side walls, and a second metal cylinder is embedded into the center of each second side wall; and the adjacent unit structures are interconnected through two adjacent and parallel second side walls in the respective second square medium cylinders. The antenna has the characteristics of dual polarization, flat third-order passband, relatively wide out-of-band rejection and good angle stability.

The utility model discloses a miniaturized LTCC low-pass filter with high out-of-band rejection, and the interior of a ceramic substrate is provided with an inner electrode, three inductors of an inductor layer and three parallel capacitors of a first capacitor layer form three resonators, and three transmission zero points are formed; the second capacitor layer and the third capacitor layer form a cross coupling capacitor, the third capacitor layer and the grounding layer form four grounding capacitors, and the three resonators are connected with one another and form a seven-order low-pass filter together with the four grounding capacitors; the bottom of the ceramic substrate is provided with an external electrode port, the external electrode port comprises two input / output ports and a grounding electrode port, the resonators are connected with the input / output ports, and the grounding capacitor is connected with a grounding point and the ports. According to the technical scheme, high suppression of multiple frequency multiplication is achieved, high-frequency warping points are suppressed, high-frequency stop-band suppression of the filter is improved, and the filter has the advantages of being small in size, low in loss, high in integration level, high in reliability and capable of being produced on a large scale.

The invention discloses a single-pole double-throw switch filtering assembly based on an LTCC (Low Temperature Co-Fired Ceramic) technology. A switching circuit and an LTCC resonator are integrated, and the on-off state of a switching diode in the working process is controlled by an externally applied direct current bias voltage. When the diode is in a conducting state, the parasitic inductor and the capacitor form series resonance, and the equivalent coupling admittance converter passing through the resonator can be inverted and equivalent to an open circuit, so that a branch signal is cut off, and channel isolation is realized; and when the diode is in a closed state, the electromagnetic field distribution of the substrate integrated waveguide resonator is not obviously influenced, the filter keeps normal work, and signal passband transmission is realized. According to the structure, on one hand, the SIW waveguide integration form is used for achieving the low insertion loss characteristic; and on the other hand, the stop-band suppression degree is effectively improved by introducing the cross coupling topology. The whole circuit has the advantages of being compact in structure, low in loss, high in isolation degree, excellent in out-of-band rejection performance and the like, and the requirements of 5G and future high-speed wireless communication systems can be met.

The invention provides a high-suppression passive reconfigurable intermediate-frequency filter based on a GaAs process, which comprises a high-order reconfigurable low-pass filter unit and a high-order reconfigurable high-pass filter unit which are in cascade connection, and is characterized in that the high-order reconfigurable low-pass filter unit is designed based on a seven-order low-pass elliptic function prototype and comprises a series branch and a parallel branch; the parallel branch comprises an adjustable capacitor and an inductor connected in series, bandwidth mode switching is achieved by adjusting the position of a transmission zero point, a fixed LC resonance circuit is introduced into the series branch to generate a fixed transmission zero point, and out-of-band rejection is enhanced; the high-order reconfigurable high-pass filter unit is designed based on a seven-order high-pass elliptic function prototype and comprises a series capacitor and a parallel grounding branch, and the parallel grounding branch comprises an inductor and an adjustable capacitor which are connected in series and is used for introducing a transmission zero point of a low-frequency stop band. According to the scheme, low insertion loss is kept while bandwidth mode switching is achieved, and the far-end out-of-band rejection capacity is remarkably improved.

The invention relates to the technical field of radio frequency filters, and discloses an electromagnetic hybrid coupling filter. The filter is formed by stacking at least two spiral wiring resonators perpendicular to a winding plane, and comprises two input and output ports which are respectively connected with the first resonator and the last resonator. Each spiral wiring resonator is composed of at least two layers of metal spiral wiring, and the multiple layers of metal spiral wiring are sequentially connected through plated-through holes. The spiral wiring resonator is arranged in the insulating medium, and the resonant frequency of the spiral wiring resonator is determined by the length of the metal wiring and the dielectric constant of the dielectric material. Electric coupling and magnetic coupling exist between every two adjacent spiral wiring resonators at the same time, a transmission zero point can be generated outside a passband while a coupling signal forms the transmission passband, and the out-of-band rejection capacity is improved. The spiral wiring filter is compact and flexible in structure, can be realized by adopting various metal wiring processes, and can be independently made into a filter chip or directly wound in a circuit substrate of a radio frequency system to realize a filtering function.

This application provides a radio frequency (RF) front-end module and an electronic device. The RF front-end module includes a substrate, a shielding structure, RF components, and multiple grounding branches. The substrate includes a metal layer. The shielding structure includes a shielding layer disposed on top of the substrate and shielding sidewalls, with the shielding sidewalls extending from the shielding layer toward the substrate. At least one RF component is disposed within the projection of the shielding structure onto the substrate. The grounding branches connect the metal layer and the shielding sidewalls, and are grounded through metal vias, with a gap between adjacent grounding branches. By grounding the shielding structure through the grounding branches disposed on the side of the substrate, the electromagnetic shielding effect of the shielding structure can be enhanced. Furthermore, interference signals generated inside the shielding structure can be efficiently transmitted to ground, preventing these interference signals from resonating inside the shielding structure and affecting the overall performance of the RF front-end module, thereby improving the out-of-band rejection performance of the RF front-end module.

A radio frequency front-end circuit includes a first diplexer, an extractor, and a second diplexer. First diplexer is coupled to an antenna for receiving a radio frequency signal and configured to separate radio frequency signal into a first signal within low, mid and high bands of a wireless wide area network and a second signal within an ultra-high band of WWAN. Extractor is coupled to first diplexer. Extractor includes two band pass filters and a band rejection filter. Two band pass filters are configured to extract two global navigation system signals within two global navigation system bands from first signal. Band rejection filter is configured to allow a third signal within the mid and high bands of WWAN in first signal to pass. Second diplexer is coupled to first diplexer and extractor and configured to combine second and third signals into a WWAN signal.

The invention relates to the technical field of remote sensing data processing, and discloses a multi-source remote sensing data-based territorial space planning conflict detection method and system, and the method comprises the following steps: S101, determining the length of a local analysis window; step S102, calculating a semantic contrary degree; step S103, calculating a normal comprehensive displacement; step S104, calculating a normal offset area gain; step S105, executing difference set elimination; and S106, generating an evidence heat map. According to the method, a local geometric field is constructed to clarify an analysis reference and a scale, a semantic contrary degree is calculated by combining a multi-source remote sensing data semantic segmentation result, and a conflict area error and a geometric strip are deducted by analyzing an integral to eliminate a false conflict region; therefore, false conflict interference caused by registration errors is reduced, and the output robust conflict mask and the correction conflict area are more suitable for the actual planning conflict condition.

The utility model discloses a kind of low-noise amplifier structures with high out-of-band suppression characteristics, it is related to radio frequency device technical field, wherein, low-noise amplifier includes electrically conductive and magnetically conductive shell, the top of electrically conductive and magnetically conductive shell is shaped with emission space, bottom is shaped with filter space, left side or right side is shaped with power supply space, emission space is equipped with emission module, filter space is equipped with filter module, power supply space is equipped with power supply module, power supply module, filter module and emission module are sequentially electrically connected.The technical scheme provided by the utility model can provide a kind of small volume and can prevent frequency signal leakage, with high reliability low-noise amplifier.

The application discloses a band-pass filter with multiple zero points and high out-of-band suppression based on an IPD technology. Mainly includes main circuit, input and output port; the main circuit includes first parallel capacitor, first series capacitor, first parallel inductor, second parallel capacitor, second parallel inductor, second parallel capacitor, second series capacitor, third parallel capacitor, first series inductor, third series capacitor, fourth parallel capacitor, fourth series inductor, fourth series capacitor. The application adds four zero points to suppress high frequency and low frequency, realizes higher out-of-band suppression, and improves the filtering characteristic of the band-pass filter; and higher out-of-band suppression is realized by adopting an optimized circuit structure.

The application discloses a kind of space non-resonant node resonator, filter and radio frequency communication equipment, and the resonator is loaded by periodic capacitance type or inductive type device to form capacitance type space non-resonant node unit or inductive type space non-resonant node unit;Capacitance or inductive type space non-resonant node unit is arranged and combined by the same kind or two kinds of space non-resonant node unit mixed to form space filter.The application has the characteristics of controllable transmission zero, low profile and high out-of-band rejection, wide application occasions, wide coverage;Moreover, the structure of the space filter of the application is simple, in addition to not occupying the volume of antenna, PCB processing technology can also be used to make the design cost low.

The application provides an adaptive filtering method, system and storage medium for a GPS circuit, real-time scanning of a radio frequency signal of a GPS through wide-band radio frequency sampling, and obtaining an interference energy distribution spectrum based on an energy peak value detection algorithm; determining interference energy based on a preset frequency point, so as to match a preset interference library; if the matching is a known interference frequency point, activating a preset fixed band rejection unit, if the matching is an unknown interference frequency point, dynamically calculating LC parameters, configuring a programmable resonance unit, and realizing dynamic suppression of an interference signal; verifying a signal-to-noise ratio based on a preset period, calculating an optimization index, and if the optimization index is insufficient, triggering LC parameter iteration and updating until positioning is stable; and providing core technical support for a high-precision positioning scene.

The invention discloses a transmitting interdigital transducer structure for improving out-of-band rejection of a surface acoustic wave filter. An IDT pattern is formed between two bus bars through a plurality of electrodes; the IDT pattern is formed by crosswise arranging a positive electrode pair and a negative electrode pair, and each electrode pair is composed of at least two electrodes with the same polarity; each electrode comprises a true finger and a false finger which are oppositely arranged, and all the true fingers and all the false fingers in any electrode pair are connected through inner connecting strips. The upper part area of each real finger transversely extends towards the two sides of the width to form two end heads, so that the width of the end heads is larger than that of the real finger; wherein one end is attached to the bus bar, and the other end is attached to the true finger inline bar. According to the surface acoustic wave filter, the end heads are arranged and the sizes of the end heads are reasonably controlled, so that the reflection conditions of sound waves at the boundaries of the bus bars and the inner connecting bars are changed, the structure can restrain a transverse mode generated in the sound wave propagation process, and the out-of-band rejection of the surface acoustic wave filter is improved.

The compact broadband band-pass filter comprises a dielectric substrate, a metal ground plane and a filter assembly are arranged on the two faces of the dielectric substrate respectively, the filter assembly comprises an input line and an output line which are located at the two ends of the dielectric substrate respectively, and a plurality of resonators are sequentially arranged between the input line and the output line. The input line is connected with the middle sections of the adjacent resonators, the middle sections of the two adjacent resonators are connected through the high-impedance lines, the output line is connected with the middle sections of the adjacent resonators, the small ends of the two adjacent resonators are located on the two sides of the dielectric substrate respectively, and a coupling line with the two ends connected with the high-impedance lines on the two sides is wound outside the small end of one resonator; the small ends of the resonators are respectively connected with the metal ground plane through a plurality of metal through holes. According to the invention, good broadband characteristics and out-of-band rejection characteristics can be provided, and good expansion characteristics are achieved.

The invention provides a surface acoustic wave device, a filter, a radio frequency front-end module and electronic equipment, the surface acoustic wave device comprises at least a first reflection structure and an interdigital transducer, each interdigital transducer comprises at least two bus bars and a plurality of electrode fingers connected to the two bus bars, and the plurality of electrode fingers are alternately arranged at intervals along a first direction; the interdigital transducer at least comprises a first electrode group and a second electrode group which are arranged along a first direction, and the first electrode group is arranged on one side close to the reflection structure; the first reflection structure at least comprises a first reflection group and a second reflection group, the first reflection group is arranged on the side, away from the interdigital transducer, of the second reflection group, the periods of the first reflection group and the second reflection group are different, and the period of the first electrode group and the period of the second electrode group are different. According to the surface acoustic wave device, the filter, the radio frequency front-end module and the electronic equipment, the near-end out-of-band rejection performance of the surface acoustic wave device can be improved.

The invention discloses a dual inductance network optimization method of a broadband BAW filter, which belongs to the technical field of filters, and comprises the following steps: establishing a Mason equivalent model of a film bulk acoustic wave resonator to obtain a target resonator; based on the target resonator, constructing a filter with a three-step structure; adding inductors to the input end and the output end of the filter with the three-step-shaped structure to obtain a capacitive impedance optimization filter; an inductor is connected in series to each parallel resonance branch of the capacitive impedance optimization filter to obtain an out-of-band rejection optimization filter; and determining a branch of the out-of-band rejection optimization filter, and performing gradient optimization to obtain an optimized filter. The problem that a radio frequency front-end filter is difficult to consider the in-band flatness, the out-of-band rejection capability and the structure compactness while realizing broadband coverage is solved.

The application discloses a kind of wideband miniaturization filter chip based on thin film ceramic technology, including upper layer metal microstrip line, intermediate layer microstrip dielectric plate and lower layer ground metal plate;Metal microstrip line includes a pair of input / output feed line, a pair of bending coupling line, parallel multi-line coupling line and serpentine line;Input / output feed line is located on the same straight line;Parallel multi-line coupling line includes at least three identical parallel coupling lines, and is coupled through gap formation;One end is connected to the junction of a pair of bending coupling line, and is perpendicular to bending coupling line;The other end is connected with serpentine line, and is perpendicular to serpentine line;Bending coupling line and serpentine line are mirror image symmetry about parallel multi-line coupling line.The application realizes the coverage to C, X band by the structure of central tight coupling line, and realizes good out-of-band rejection.Compared with prior art, the application realizes superior frequency band selectivity, low insertion loss and good impedance matching.

The application provides a bulk acoustic wave filter, a communication device and a preparation method of the bulk acoustic wave filter. The bulk acoustic wave filter comprises: a first substrate; a first bulk acoustic wave resonator and a second bulk acoustic wave resonator which are arranged adjacent to each other in a horizontal direction on the first substrate, the first bulk acoustic wave resonator and the second bulk acoustic wave resonator comprising a laminated structure of a bottom electrode, a piezoelectric layer and a top electrode; the first bulk acoustic wave resonator and the second bulk acoustic wave resonator have no overlap in the orthogonal projection on a horizontal plane; the electrodes of the first bulk acoustic wave resonator and the second bulk acoustic wave resonator have no overlap in the orthogonal projection on a vertical plane, the electrodes comprising at least one of the bottom electrode and the top electrode; and the first bulk acoustic wave resonator and the second bulk acoustic wave resonator are located on the same surface of the first substrate. The technical scheme provided by the embodiment of the application avoids the coupling parasitic effect between the bulk acoustic wave resonators and improves the out-of-band rejection of the bulk acoustic wave filter.

The present application discloses a bulk acoustic wave filter and a duplexer. The bulk acoustic wave filter comprises an input terminal, an output terminal, first-type resonators and second-type resonators; the first-type resonators are arranged in series between the input terminal and the output terminal; one end of each second-type resonator is connected between the input terminal and the output terminal and the other end thereof is grounded; a first resonator, a first sub-resonator, and a second sub-resonator each comprise a bottom electrode, a piezoelectric layer, a top electrode, and a boundary loop structure; along the thickness direction of the bulk acoustic wave filter, the boundary loop structure overlaps the edge of the top electrode; and the thickness of the boundary loop structure in the first resonator is different from the thickness of the boundary loop structure in the first sub-resonator, and is different from the thickness of the boundary loop structure in the second sub-resonator. By means of the technical means, by setting the thicknesses of boundary loop structures in different types of resonators, out-of-band rejection can be improved and the performance of bulk acoustic wave filters can be improved.

The utility model provides a filter comprising a body which is provided with a plurality of resonant cavity bodies arranged at intervals along the length direction. A first coupling window is arranged between two adjacent resonant cavity bodies; the filter further comprises at least one pole cavity body protruding outwards from the body, one pole cavity body is arranged on any side of any resonant cavity body in the width direction and aligned with the corresponding resonant cavity body, and the pole cavity body is coupled with the corresponding resonant cavity body through a second coupling window. The filter body protrudes outwards to form the pole cavity body, the pole cavity body and the resonant cavity body are coupled through the second coupling window, and the pole cavity body can generate redundant frequency, so that poles are added outside a filter band, the out-of-band rejection is improved, and a high-rejection environment is met. In addition, the filter can obtain excellent insertion loss and out-of-band rejection performance by adjusting the arrangement positions and the number of the pole cavity bodies, and the comprehensive performance of the filter is improved.

The invention relates to the field of communication, and provides a filter and communication equipment. The filter comprises at least two resonators, a coupling window communicated with the interiors of the two adjacent resonators is arranged between the two adjacent resonators, and a medium piece is arranged in at least one coupling window. Based on the above structure, the coupling relationship between two adjacent resonators can be constructed as required through the coupling window and the dielectric member, and the required coupling strength and coupling polarity can be achieved, so that the coupling design between the two adjacent resonators can be simplified and optimized, and the simulation design of the filter can be facilitated. Moreover, compared with the prior art in which a fly rod is adopted to construct a coupling relationship, the dielectric member is a non-metal member, a suspension arm is not formed, and resonance with the frequency near a passband range is not additionally generated, so that the performance of the filter can be optimized and improved, and particularly, the filtering performance and the out-of-band rejection performance of the filter can be improved.

The application belongs to the technical field of radio frequency microwave circuits, and particularly discloses a two-path multi-stage power amplifier with high isolation and strong out-of-band suppression. The application comprises an improved filtering power distribution module and an improved filtering power synthesis module which are of the same structure but are reversely arranged, and a first multi-stage amplification module and a second multi-stage amplification module which are of the same structure; the first multi-stage amplification module comprises an input matching bias fusion module, a first transistor, a multi-frequency point matching bias fusion module, a second transistor, a multi-frequency point matching bias fusion module, a third transistor and an output matching bias fusion module which are connected in sequence. The application can effectively suppress out-of-band harmonics, realize high power output and high efficiency within a high frequency bandwidth, and effectively reduce the area of the overall circuit structure. The application can be widely applied to high-performance radio frequency front-end systems.

The present application relates to a resonator and a manufacturing method therefor. The resonator comprises an interdigital transducer. The interdigital transducer comprises a busbar unit and an interdigital electrode unit. The busbar unit comprises two busbars opposite each other in a first direction. The interdigital electrode unit is located between the two adjacent busbars. In the first direction, a region between the two busbars is configured as a plurality of acoustic channels on the basis of the interdigital electrode unit. The portion of the interdigital electrode unit that is located in each acoustic channel forms an interdigital electrode group. Any two adjacent interdigital electrode groups have different structures. Resonant frequencies of fundamental modes in the plurality of acoustic channels are identical. The resonator has stable operating performance, and excitation positions and intensities of spurious waves generated during operation of the resonator are dispersed, such that the out-of-band rejection performance of the resonator is effectively improved. In addition, the structure of interdigital electrodes and the structure of the interdigital electrode groups in the resonator can be flexibly adjusted on the basis of actual requirements. The manufacturing steps of the manufacturing method are simple and can be easily implemented.

According to the laminated chip duplexer equivalent circuit for the 5G terminal and the duplexer thereof, on the basis of the LTCC low-temperature co-fired ceramic technology, the special electrical performance requirement of the novel laminated chip duplexer for the 5G terminal is met through lumped parameter model design, a transmission zero point is introduced outside a low-frequency passband through parallel resonance at the low frequency, out-of-band rejection is enhanced, and the low-frequency band pass-band pass-band rejection is improved. The high-frequency band forms a transmission zero point at the passband low-frequency band by introducing the bridging capacitor, the suppression capability of the high-frequency passband at the low frequency is enhanced, and in addition, the passband range of the high-frequency band is simply and effectively widened by introducing the series inductor at the high-frequency port. Frequency division of low-frequency signals and high-frequency signals is effectively achieved, the high-frequency passband bandwidth is effectively widened, passing of the 5G frequency band N77 and N79 frequency bands is met, and the frequency divider has the advantages of being low in loss, high in suppression, high in isolation, high in reliability, low in cost, good in consistency, suitable for large-scale production and the like. And in addition, the novel electronic component integration and miniaturization development trend is also adapted.