93 results about "Electromechanical coupling coefficient" patented technology

The invention relates to the field of microelectronic devices, in particular to a bulk acoustic wave resonator with a double-layer piezoelectric film structure, a preparation method and a filter, the bulk acoustic wave resonator comprises a cap wafer, and a dry film, a passivation layer, a silicon oxide layer, a high-resistance silicon wafer and RDL metal are sequentially arranged on the cap wafer; the dry film and the cap wafer form a dry film cavity, the passivation layer located above the dry film cavity extends into the dry film cavity, and a top electrode, a first piezoelectric film, a middle electrode, a second piezoelectric film and a bottom electrode are sequentially arranged on the passivation layer; the top electrode and the bottom electrode are used as first ports of the resonator; and the middle electrode is a second port. According to the resonator, the excitation mode of the resonator is changed through cooperation of the two layers of piezoelectric films with the same polarization direction and the intermediate electrode, a high-order resonance mode is jointly excited, meanwhile, a high electromechanical coupling coefficient is kept, and a wide fractional bandwidth is achieved at high frequency through the relatively thick piezoelectric films; the problems that a high-frequency resonator is weak in power bearing capacity, narrow in bandwidth, low in quality factor and poor in stability are solved.

The invention provides a composite piezoelectric layer and a preparation method thereof, and relates to the technical field of semiconductors. The preparation method of the composite piezoelectric layer comprises the following steps: providing a first substrate, and depositing a first piezoelectric layer with a first preset thickness on the first substrate; dividing the surface of the first piezoelectric layer into a plurality of detection areas; detecting the concentration of the doped elements in each detection area; if the concentration of the doping element is larger than the preset doping concentration, the detection area is thinned, a first compensation layer is deposited on the thinned detection area, and the first compensation layer is used for reducing the overall doping concentration of the composite piezoelectric layer on the detection area; if the concentration of the doping element is smaller than the preset doping concentration, a second compensation layer is deposited on the detection area, and the second compensation layer is used for improving the overall doping concentration of the composite piezoelectric layer on the detection area. By adopting the preparation method of the composite piezoelectric layer, the deviation of electromechanical coupling coefficients in different areas on the same piezoelectric layer can be reduced.

The invention relates to the technical field of radio frequency filters, in particular to a 13GXBAR filter design method based on a lithium niobate film. The Euler angle of the lithium niobate thin film is subjected to simulation setting in finite element simulation software, admittance responses under different cutting angles are obtained, an admittance curve with a large electromechanical coupling coefficient and complete stray mode suppression is obtained, the tangential angle is used for simulating an electrode material, the interdigital logarithm, the interdigital distance, the thin film thickness and the metallization ratio, and an admittance curve with a large electromechanical coupling coefficient and complete stray mode suppression is obtained. The method comprises the following steps of: constructing a plurality of resonators, obtaining impedance of each resonator, obtaining material parameters of the corresponding resonator, constructing a three-dimensional force-electricity coupling model of the lithium niobate resonator, carrying out layout design on the physical model in finite element simulation software through a field-circuit coupling method, and coupling force-electricity-sound multi-physical fields to obtain an S parameter curve of the designed XBAR filter; and whether the S parameter result is consistent with the target is verified, so that the forward design of full-simulation driving is realized.

The invention relates to the technical field of communication equipment design, in particular to a design method and system for a broadband annular magnetoelectric antenna with a high electromechanical coupling coefficient. Constructing a vibration analysis model of the annular piezoelectric layer, and calculating to obtain a characteristic equation of rigidity and mass coefficients according to the vibration analysis model; solving the characteristic equation of the rigidity and the quality coefficient to obtain a resonant frequency and an anti-resonant frequency; the resonant frequency and the anti-resonant frequency are substituted into an electromechanical coupling coefficient formula, a size factor is introduced, and a correction formula is constructed; obtaining an optimized size parameter of the annular piezoelectric layer based on a correction formula; optimized size parameters of the annular piezoelectric layer can be obtained through simulation, the design efficiency and the performance stability of the antenna are further improved, and in practical application, the antenna can adapt to the requirements of different frequency bands and scenes more quickly.

The invention belongs to the technical field of functional materials, and particularly relates to a 1-3 type lead metaniobate piezoelectric composite material and a preparation method and application thereof. The composite material takes lead metaniobate ceramic with a tungsten bronze structure as a one-dimensional piezoelectric phase and takes epoxy resin as a three-dimensional polymer phase. The ratio [lambda] / T of the transverse periodic dimension ([lambda]) of the ceramic column to the thickness (T) of the composite material is 0.1-0.6. The preparation method is characterized in that the ceramic column array is formed through precise cutting, cutting parameters are controlled to achieve the lambda / T ratio, and then resin encapsulation, curing, polishing and electrode preparation are conducted. According to the invention, the electromechanical coupling performance and stability of the composite material at ultrahigh temperature are synergistically improved by selecting the lead metaniobate ceramic with high Curie temperature and combining specific lambda / T structural parameters. The obtained material can still keep good performance at 350 DEG C, the maximum thickness electromechanical coupling coefficient kt can reach 0.35, and the material is suitable for high-temperature acoustic logging and underwater acoustic receiving transducers.

This invention provides a method for manufacturing a bulk acoustic wave resonator, including a substrate provision step, an acoustic reflection structure formation step, and a stacked structure formation step. The stacked structure formation step includes: sequentially forming a lower electrode, a first piezoelectric layer, a second piezoelectric layer, and an upper electrode from bottom to top on the substrate or the acoustic reflection structure. The upper electrode, the second piezoelectric layer, the first piezoelectric layer, the lower electrode, and the acoustic reflection structure have an overlapping region in the device thickness direction, which constitutes the resonant region of the bulk acoustic wave resonator. The first piezoelectric layer is implemented using a doped piezoelectric material, which is doped with impurity elements to improve the electromechanical coupling coefficient of the first piezoelectric layer. The second piezoelectric layer is implemented using an undoped piezoelectric material. Correspondingly, this invention also provides a bulk acoustic wave resonator and a filter. Implementing this invention can yield a bulk acoustic wave resonator that balances electromechanical coupling coefficient and quality factor, has low parasitic modes, and exhibits stress balance.

To provide a single crystal having a large electromechanical coupling coefficient and a large coercive electric field when used as a piezoelectric element, and a method for manufacturing the same.SOLUTION: A method for manufacturing a perovskite-type single crystal, the method comprising the steps of (1) firing a raw material containing an acceptor in an air atmosphere to obtain a first perovskite-type single crystal, (2) firing the first single crystal in a reducing atmosphere, and (3) firing the single crystal obtained in step (2) in an air atmosphere, thereby obtaining a perovskite-type single crystal having a higher coercive electric field value than the first single crystal.SELECTED DRAWING: Figure 1

The invention provides a surface acoustic wave device structure and device. The surface acoustic wave device structure comprises a substrate, a piezoelectric layer formed on the substrate 100 and an IDT electrode formed on the surface of the piezoelectric layer. The piezoelectric layer is etched into a first surface and a second surface which have a height difference, and the electrode fingers of the IDT electrode extend along the second direction and partially cover the first surface. The height difference between the first surface and the second surface is regulated and controlled, and the difference value of the height difference does not exceed the thickness of the electrode fingers, so that the local thickness distribution of the piezoelectric layer is changed, the purposes of adjusting the intensity distribution of the surface acoustic wave energy and accurately adjusting the propagation speed of the surface acoustic wave are achieved, and the flexible and smooth adjustment of the electromechanical coupling coefficient (K2) is realized. Meanwhile, the structure mutation formed by the height difference can optimize the reflection path of the surface acoustic wave, and in combination with the partial coverage design of the electrode fingers, the transverse parasitic mode can be inhibited.

The application discloses a blood viscoelasticity sensor electromechanical coupling coefficient and equivalent model parameter measurement method, belongs to the field of blood coagulation analysis, and establishes a mechanical vibration system equivalent model of a blood viscoelasticity sensor and an equivalent circuit of a coil in the sensor, deduces a formula of the coil dynamic impedance module, loads loads with different masses on a sensor probe, calculates M m_n1 、 K m_n1 、 R m_n1 、 M m_n2 、 K m_n2 and R m_n2 ; so that the electromechanical coupling coefficient and the equivalent model parameters of the sensor vibration system are calculated M m 、 K m and R m ; the above measurement steps do not need to disassemble the viscoelasticity sensor from the system, do not depend on specific tooling, and are simple to operate.

Relaxation lead-based textured ceramic material with low texture temperature and high electrical performance, preparation method and application thereof relates to relaxation lead-based textured ceramic material and preparation method and application thereof. The problem of high texture temperature of low Zr content ceramic, orientation grain presenting core-shell structure, high Zr content ceramic being difficult to be textured with high quality, leading to high voltage electrical performance and low texture temperature of ceramic being unable to be acquired simultaneously is solved. Chemical formula (1-x-y) Pb (A, Nb) O3-x Pb Zr O3-y Pb Ti O3 is prepared at 850 DEG C-1095 DEG C, the texture Zr content can reach more than 50%, along [001] c The orientation degree is greater than 96%, the grain misplacement degree is less than 0.20, there is no core-shell structure, the Curie temperature is greater than or equal to 200 DEG C, the quasi-static piezoelectric coefficient is greater than 1000 pC / N, and the electromechanical coupling coefficient is greater than 0.85. The method comprises the following steps: preparing a mother body fine powder, preparing a ceramic green body by flow casting and stacking and pressing, and preparing a textured ceramic. The method is used in a multilayer piezoelectric device.

The invention belongs to the technical field of piezoelectric ceramics, and particularly relates to a lead antimonate niobate-lead manganese niobate-lead zirconate titanate piezoelectric ceramic material and a method. Comprising a chemical general formula of xPb (Sb1 / 3Nb2 / 3) O3 <-0.04 > Pb (Mn1 / 3Nb2 / 3) O3 <-(0.96-x) Pb < 0.98 > Sr < 0.02 > (Zr < 0.5 > Ti < 0.5 >) O3 < + y wt% Fe < 2 > O < 3 >, wherein x is equal to 0.01 to 0.08, and y is equal to 0.01 to 2. The piezoelectric ceramic material is prepared from the following raw materials: Pb3O4, TiO2, ZrO2, Nb2O5, Sb2O3, MnO2 and SrCO3. The piezoelectric ceramic has a high piezoelectric coefficient and a high electromechanical coupling coefficient at the same time, compared with traditional P-8 series piezoelectric ceramics, the energy conversion rate can be improved, and the piezoelectric ceramic has low dielectric loss and high mechanical quality factor together with P-8 and has low loss in the energy conversion process.

The invention relates to a tetracopolymer piezoelectric film for infrastructure monitoring, a preparation method and preparation equipment, the piezoelectric film comprises polyvinylidene fluoride, trifluoroethylene, chlorofluoroethylene and alkyne fluoride, the electromechanical coupling coefficient is 52%, the piezoelectric charge constant is 220 pm / V. The polyvinylidene fluoride, trifluoroethylene and chlorofluoroethylene are subjected to ternary polymerization, and the piezoelectric charge constant is 220 pm / V. A proper amount of FA monomer is introduced into the ternary polymer, part of CFE is replaced by the FA monomer, part of the FA monomer is embedded into a polymer crystal, the crystal spacing is reduced, a polymer chain is converted from loose 3 / 1 helical conformation to high-polarity all-trans conformation, and the size of a coherent crystalline region in X-ray diffraction is reduced. The proportion of the piezoelectric film has higher electromechanical coupling coefficient and piezoelectric charge constant, and meanwhile, the preparation equipment and the preparation method of the piezoelectric film improve the automation degree, the production efficiency and the production parameter control precision.

The invention discloses a PZT-based high-power piezoelectric ceramic and a preparation method thereof, and belongs to the technical field of piezoelectric ceramic materials. The chemical formula of the antimony manganese-lead zirconate titanate piezoelectric ceramic is 0.05 Pb (Mn < 1 / 3 > Sb < 2 / 3 >) O < 3 >-0.95 Pb < 0.97 > Sr < 0.03 > (Zr < 1 / 2 > Ti < 1 / 2 >) O < 3 + 0.1 wt% of manganese-containing oxide. By doping the manganese-containing oxide into the antimony manganese-lead zirconate titanate matrix, when the piezoelectric coefficient d33 of the prepared antimony manganese-lead zirconate titanate based piezoelectric ceramic reaches 393pC / N, the mechanical quality factor Qm can reach 1708, the electromechanical coupling coefficient is 0.630, the dielectric loss is 0.45%, the Curie temperature is 299 DEG C, and the antimony manganese-lead zirconate titanate based piezoelectric ceramic has excellent comprehensive performance.

The utility model relates to the technical field of sensors, and particularly discloses a sensor for a hydrophone, which comprises a support ring, two support plates and two piezoelectric ceramics. Wherein the two supporting plates are arranged at the two ends of the supporting ring correspondingly, and a sealing cavity is defined by the two supporting plates and the supporting ring; the piezoelectric ceramics are provided with at least two layers of ceramic pieces which are arranged in a laminated mode, and the two piezoelectric ceramics are arranged on the opposite side faces of the two supporting plates respectively and located outside the sealing cavity. By means of the arrangement of the structure, holes do not need to be formed in the supporting ring, the preparation process is simplified, and cost is reduced; meanwhile, the piezoelectric ceramics on one supporting plate are fixed in a one-time bonding mode, loss is reduced, the electromechanical coupling coefficient of the piezoelectric ceramics is remarkably improved, and therefore the sensitivity is improved.

The invention provides a manufacturing method of a filter device and a surface acoustic wave filter, and the manufacturing method comprises the steps: providing a piezoelectric substrate, forming an interdigital electrode layer on the piezoelectric substrate, and enabling the interdigital electrode layer to comprise an interdigital body and an extension part adjacent to the interdigital body; forming a protective layer on the interdigital electrode layer, wherein the protective layer covers the interdigital body and the extension part; and performing dry etching treatment on the protection layer and the extension part to remove the extension part. The technical problem solved by the invention is that key performance parameters of the filter are reduced due to the occurrence of a broadening phenomenon, specifically, ideal electromechanical coupling coefficient (K value) and quality factor (Q value) cannot be obtained, so that the yield of the filter is reduced.

Provided is an acoustic resonator in a transverse excitation shear mode. The acoustic resonator comprises: an acoustic mirror (120), which comprises at least one first acoustic reflecting layer (121, 123, 125) and at least one second acoustic reflecting layer (122, 124), wherein the acoustic impedance of each first acoustic reflecting layer is less than that of each second acoustic reflecting layer; a piezoelectric layer (130), which is arranged on the acoustic mirror, and which comprises lithium niobate of a single crystal material and / or lithium tantalate of a single crystal material; electrode units (142, 143, 144), which are arranged on the piezoelectric layer (130) and are used for forming an electric field; and transverse reflectors (152, 154), which are arranged on the piezoelectric layer, are used for transversely reflecting acoustic waves, and can have a high electromechanical coupling coefficient and a high Q value at a frequency greater than 3 GHz.

The invention discloses a transducer and a preparation method of a 3-1 type piezoelectric composite material layer, and relates to the technical field of transducers, the transducer comprises a shell, the 3-1 type piezoelectric composite material layer, a sound absorption supporting layer and a waterproof sound transmission layer, the 3-1 type piezoelectric composite material layer comprises three-dimensionally communicated piezoelectric phases and a one-dimensionally arranged polymer material, the 3-1 type piezoelectric composite material layer is arranged in the inner space of the shell, the sound absorption supporting layer is used for providing supporting force for the back face of the 3-1 type piezoelectric composite material layer, the waterproof sound transmission layer is connected with the inner wall of the first end of the shell in a sealed mode, and the 3-1 type piezoelectric composite material layer can effectively improve the working bandwidth of the transducer. Meanwhile, the piezoelectric composite material keeps the strong piezoelectric property of the piezoelectric phase, it is ensured that the transducer has a high-efficiency electromechanical coupling coefficient, the parasitic effect can be effectively restrained through the 3-1 type piezoelectric composite material layer, and the technical effect of improving the comprehensive performance of the transducer is achieved.

This invention relates to the field of piezoelectric materials technology, specifically to a chiral nitrogen-containing heterocyclic organic crystalline piezoelectric material and its preparation method. The organic crystalline piezoelectric material is N-cyanoethyl-( S )-2-methylpiperazine hydrochloride, whose core is a one-dimensional hydrogen-bonded chain construction strategy of unilaterally protonated chiral piperazine, with protonated N-cyanoethyl-( S Using 2-methylpiperazine cations as structural building blocks and chloride ions as charge balancers, a highly oriented one-dimensional hydrogen bond chain is constructed by regulating intermolecular hydrogen bonding. This enhances the ordered arrangement of molecular dipoles and optimizes the synergistic mode of lattice strain-polarization response, achieving a breakthrough in piezoelectric properties. The material exhibits a piezoelectric coefficient as high as ±80 pC / N and an electromechanical coupling coefficient as high as 0.35, far exceeding known chiral organic piezoelectric materials. Furthermore, it demonstrates excellent thermal stability and can be widely applied in demanding applications such as micro-pressure sensors, low-frequency vibration detectors, and micro energy harvesters.

The application discloses a Lamb wave resonator, comprising: a first substrate; a piezoelectric layer, a cavity is formed between the first substrate and the piezoelectric layer, the piezoelectric layer is a C-axis inclined piezoelectric film, the angle of C-axis inclination is 48°-68° or -68°-48° by rotating the C-axis orientation of the piezoelectric film, the piezoelectric layer is suitable for exciting the first-order anti-symmetry mode Lamb wave under the action of a transverse electric field; a first metal electrode layer, comprising a metal electrode array formed by a plurality of positive and negative metal electrodes arranged alternately, the metal electrode array forms a transverse electric field, the first metal electrode layer is formed on the piezoelectric layer, and the direction of the transverse electric field is 70°-90° or -90°-70° with the +X axis direction of the global coordinate system of the C-axis inclined piezoelectric film; wherein the piezoelectric layer excites the A1 vibration mode Lamb wave under the action of the transverse electric field, so that the Lamb wave resonator realizes an electromechanical coupling coefficient greater than 15% under the condition that the resonant frequency is greater than 3 GHz.

This invention discloses a piezoelectric ceramic membrane and its preparation method, comprising a modified lead zirconate titanate-based ceramic and a surface functional coating. The modified lead zirconate titanate-based ceramic serves as the substrate, wherein x = 0.52-0.54, and contains A-site doping elements, B-site doping elements, and sintering aids. The surface functional coating is silicon nitride, with a thickness of 100-300 nm, and is prepared by low-pressure chemical vapor deposition (LPCVD). This invention, through La, Nb, Sr, and Mn multi-component composite doping, significantly reduces the temperature coefficients of the piezoelectric constant d31 and the electromechanical coupling coefficient k31, achieving a displacement drift ≤ ±3% over a wide temperature range of -20℃ to 85℃, ensuring stable micro-infusion accuracy under different environments. The integrated composite membrane structure with a central island and annular support improves displacement linearity while ensuring a large stroke, reducing hysteresis and creep, and meeting the ultra-high precision infusion requirements of 0.05U~0.01U.

The invention provides a multi-mode coupling acoustic resonator, a filter and radio frequency equipment, and relates to the technical field of acoustic resonators. According to the multi-mode coupling acoustic wave resonator, the material of a piezoelectric layer is selected, and the value range of an in-plane Euler angle is set, so that piezoelectric coefficients of the piezoelectric layer comprise an e11 component, an e13 component and an e34 component in a piezoelectric coefficient matrix; by designing the ratio of the thickness of the piezoelectric layer to the periodic wavelength of the interdigital electrode, a transverse electric field and a longitudinal electric field exist in the piezoelectric layer at the same time when voltage is applied to the interdigital electrode; and by designing the ratio of the thickness of the interdigital electrode to the thickness of the piezoelectric layer, the integral of the dot product of the electric field and the alternating stress field in the piezoelectric layer in the thickness direction of the piezoelectric layer is not zero, so that the transverse electric field and the longitudinal electric field excite a multi-mode coupling acoustic wave at the same time, and the multi-mode coupling acoustic wave resonator has the advantages of ultrahigh working frequency, low cost and the like. And the material has a large electromechanical coupling coefficient, and can meet the large bandwidth requirement of centimeter wave communication frequency bands.

The invention belongs to the field of piezoelectric acoustic wave devices, and particularly relates to an acoustic surface wave resonator of an LN-POI multilayer structure. The resonator comprises an interdigital electrode layer, a piezoelectric layer, an oxide buried layer, a polycrystalline silicon layer and a substrate which are stacked from top to bottom, the interdigital electrode layer is composed of a first bus bar, a second bus bar and electrode finger bars connected to the inner sides of the two bus bars. The electrode finger strips connected with the same bus bar are parallel, and all the electrode finger strips and the bus bar form an inclination angle of 20-25 degrees; the large electromechanical coupling coefficient and the working frequency of the resonator are improved, the transverse mode can be suppressed, and the performance of the resonator is improved.

This invention discloses a performance optimization method for a tristable energy harvester under low-frequency excitation based on vibration resonance, belonging to the field of energy harvester optimization. The implementation method is as follows: a standard rectifier circuit is selected as the nonlinear collection circuit and connected to the energy harvester to achieve a stable DC output; a strongly nonlinear system model of the electromechanical coupled tristable energy harvester system is established; the slow variable equation of the tristable energy harvester system is derived using the variable separation method; the steady-state solution and analytical expression of the DC power of the tristable energy harvester system are derived using the harmonic balance method; an optimization model of the tristable energy harvester system under low-frequency excitation is obtained based on vibration resonance; the influence of low-frequency excitation amplitude, low-frequency excitation frequency, stiffness coefficient, time constant ratio, and electromechanical coupling coefficient on the collection performance of the tristable energy harvester system is analyzed using the optimization model, and the optimal combination is selected to achieve efficient energy harvesting of the tristable energy harvester system under low-frequency excitation.

The invention discloses a resonator based on a periodically polarized piezoelectric film, and belongs to the technical field of piezoelectric resonators. The resonator comprises a substrate, a periodically polarized piezoelectric film and an interdigital transducer. The substrate is a POI substrate, an SMR type substrate or a substrate structure with a cavity at the bottom; the periodic polarization piezoelectric film is formed by laminating at least two layers of piezoelectric films with opposite polarization directions, and a 180-degree phase difference exists between the adjacent layers; the interdigital transducer is arranged on the upper surface of the piezoelectric film, and electrode materials comprise one or more of titanium Ti, aluminum Al, copper Cu, gold Au, platinum Pt and silver Ag. According to the invention, the working frequency is effectively expanded on the premise of not sacrificing the thickness of the piezoelectric layer through the periodic polarization laminated structure, the quality factor Q value and the electromechanical coupling coefficient K2 are remarkably improved, the problem of performance degradation caused by thin film thinning of the high-frequency resonator is solved, and the high-frequency resonator is particularly suitable for the fields of millimeter wave communication, filters and sensors.

The invention discloses a broadband sound body wave delay line device film layer structure and a preparation method thereof. The film layer structure comprises a sound transmission medium, an input thin film transducer and an output thin film transducer, wherein the input thin film transducer and the output thin film transducer are arranged at the two ends of the sound transmission medium respectively; each of the two thin film transducers comprises a bottom electrode, an AlScN piezoelectric thin film and an upper electrode which are sequentially arranged away from the sound transmission medium; the orientation of the AlScN piezoelectric film is C-axis orientation, and the full width at half maximum is 1-4; and the doping concentration of Sc in the AlScN piezoelectric film is 5 at%-25 at%. According to the film layer structure, the AlScN thin film is adopted as a piezoelectric material of the transducer, due to the high electromechanical coupling coefficient of the AlScN thin film, the bandwidth of the device can be effectively improved through the structure, and the application scene with the higher bandwidth requirement is met. In addition, by further controlling the orientation, the full width at half maximum and the Sc doping concentration of the AlScN thin film, the relative bandwidth can reach 98% or above, and wider signal processing capacity and anti-interference capacity are achieved.

The invention discloses a surface acoustic wave device. Comprising an interdigital transducer; the interdigital transducer comprises a first bus bar, a second bus bar, a plurality of first long electrode fingers connected with the first bus bar and a plurality of second long electrode fingers connected with the second bus bar; an active area of the interdigital transducer is an area where the first long electrode fingers and the second long electrode fingers are overlapped along a first direction; the first long electrode fingers and the second long electrode fingers located in the active region are alternately arranged in the first direction and extend in the second direction, and the second direction intersects with the first direction; in the second direction, the width of the first long electrode finger in the active region is gradually reduced and then gradually increased; and along the second direction, the width of the second long electrode finger in the active region is gradually reduced and then gradually increased. According to the surface acoustic wave device, the long electrode finger of the active region adopts a concave surface outline configuration, so that a spurious mode can be suppressed on the premise of keeping an electromechanical coupling coefficient, a quality factor and an electromechanical coupling coefficient of a main mode of the surface acoustic wave device.

The application relates to a multifunctional mortise and tenon shaped piezoelectric vibrator and a preparation method thereof, and belongs to the piezoelectric material field. The multifunctional mortise and tenon shaped piezoelectric vibrator comprises a tenon unit, a mortise unit, a connecting unit and an electrode unit. The tenon unit is integrally processed. The mortise unit is integrally processed. The tenon unit and the mortise unit are stacked and combined along the thickness direction, the double resonance frequency coupling of the electric lead curve is realized, the bandwidth expansion purpose is achieved, the tenon unit and the mortise unit both contain air gap modules, the air gap modules do not contain polymer materials, therefore, a higher electromechanical coupling coefficient can be generated to satisfy the high-sensitivity receiving performance of a transducer. The application further provides a preparation method of the multifunctional mortise and tenon shaped piezoelectric vibrator. The method adopts a step-by-step cutting-multiple filling mode to integrally form the piezoelectric vibrator, has the advantages of simple process, short preparation period and low cost, and is helpful to the development of a high-performance receiving and transmitting small-size integrated underwater acoustic transducer and an array thereof.

The utility model discloses a film bulk acoustic resonator, a filter and a communication device, and the film bulk acoustic resonator comprises a carrier which comprises a first part and a second part; a cavity formed in the second portion of the carrier; a lower electrode formed on the carrier and covering the cavity; a piezoelectric layer formed on the lower electrode; an upper electrode formed on the piezoelectric layer; the capacitor is formed at the bottom of the cavity; the capacitor comprises a first electrode, a dielectric layer and a second electrode; a first electrode of the capacitor covers the bottom surface of the cavity, a dielectric layer is formed on the first electrode, and a second electrode is formed on the dielectric layer; the capacitor is used for adjusting the effective electromechanical coupling coefficient of the film bulk acoustic resonator.

The invention discloses a delay line type filter based on an optimized single-phase transducer, which comprises an electrode layer, a piezoelectric material and a high-sound-velocity substrate, and is characterized in that the electrode layer is a patterned interdigital electrode which is periodically distributed; the graphical periodically-distributed interdigital electrodes are composed of two groups: one group is an input transducer, and the other group is an output transducer; the two groups of transducers are arranged in a mirror image manner, namely, the periodic directions are strictly aligned, and 1-1000 wavelengths are arranged between the two groups of transducers at a certain distance; according to the invention, the delay linear filter formed by the transducer has smaller insertion loss; meanwhile, the structure provided by the invention is suitable for all piezoelectric materials and acoustic modes, and in the LiNbO3-SiC material, the LiNbO3-SiC material has a Loff wave mode with a larger electromechanical coupling coefficient, so that the insertion loss can be reduced.

The invention relates to a lead-free transduction element for an ultrasonic transducer and a preparation method of the lead-free transduction element, and belongs to the technical field of ultrasonic transducer equipment, the lead-free transduction element is characterized in that the lead-free transduction element is composed of a lead-free piezoelectric material and a non-piezoelectric phase material, the lead-free piezoelectric material is a quadrangular prism which is uniformly cut into a latticed crystal column array, and the non-piezoelectric phase material is a non-piezoelectric phase material. The non-piezoelectric phase material is filled among the latticed crystal column arrays; the height of the composite material composed of the lead-free piezoelectric material and the non-piezoelectric phase material is 40-60 microns, and the volume of the lead-free piezoelectric material accounts for 50-60% of that of the composite material; the volume of the non-piezoelectric phase material accounts for 40%-50% of the volume of the composite material, the side length of a crystal column is 30-40 microns, the resonant frequency and the anti-resonant frequency of the composite material are both larger than 20 MHz, and the electromechanical coupling coefficient is larger than 70%. According to the invention, the harm of a lead-based piezoelectric material in an existing ultrasonic transducer transduction element to the environment and a human body is overcome, and the provided preparation method overcomes the problems that a lead-free piezoelectric single crystal is fragile and easy to crack, and a small-size crystal column is easy to collapse when being cut.