149 results about "Electromechanical coupling coefficient" patented technology

The invention provides a bulk acoustic wave resonator, a filter and electronic equipment. The bulk acoustic wave resonator comprises a substrate layer, a Bragg reflection layer arranged on the substrate layer and a piezoelectric transduction structure layer arranged on the Bragg reflection layer. The Bragg reflection layer comprises a plurality of film layers which are arranged in a stacked mode, and the refractive indexes of every two adjacent film layers are different; the piezoelectric transduction structure layer comprises a piezoelectric layer and an electrode layer which are stacked; at least one film layer, close to the piezoelectric transduction structure layer, in the Bragg reflection layer is a preset film layer, the preset film layer comprises cavity parts and supporting parts, the cavity parts and the supporting parts are alternately arranged in the first direction, and the first direction is parallel to the substrate layer. According to the bulk acoustic wave resonator, acoustic wave energy is concentrated on the piezoelectric layer through the cavity parts, the electromechanical coupling coefficient of the bulk acoustic wave resonator is increased, under the alternate arrangement of the cavity parts and the supporting parts, the slowness curve of the main vibration mode of the bulk acoustic wave resonator is flattened, the transverse mode and stray response are restrained, and therefore the quality factor of the bulk acoustic wave resonator is improved.

The present disclosure provides a multi-coefficient coupled-mode surface acoustic wave resonator and a manufacturing method therefor. During operation of the surface acoustic wave resonator, at least two different piezoelectric coefficients are coupled and jointly excite acoustic waves. The multi-coefficient coupled-mode surface acoustic wave resonator comprises: a substrate; a piezoelectric layer, provided on the substrate; an electrode unit, provided on the surface of the piezoelectric layer and comprising at least one interdigital electrode pair; and a reflective grating unit, comprising at least two grating structures which are symmetrically arranged on the two sides of the electrode unit, wherein the equivalent density of the electrode unit is greater than 4000kg / m3. The electric field distribution is changed by changing the mass loading effect of the interdigital electrode pair and the ratio of the electrode wavelength to the thickness of the piezoelectric layer, such that at least two piezoelectric coefficients are mutually coupled to jointly excite acoustic waves, thus achieving the surface acoustic wave resonator having an electromechanical coupling coefficient exceeding 25%.

The invention relates to the field of microelectronic devices, in particular to a bulk acoustic wave resonator with a double-layer piezoelectric film structure, a preparation method and a filter, the bulk acoustic wave resonator comprises a cap wafer, and a dry film, a passivation layer, a silicon oxide layer, a high-resistance silicon wafer and RDL metal are sequentially arranged on the cap wafer; the dry film and the cap wafer form a dry film cavity, the passivation layer located above the dry film cavity extends into the dry film cavity, and a top electrode, a first piezoelectric film, a middle electrode, a second piezoelectric film and a bottom electrode are sequentially arranged on the passivation layer; the top electrode and the bottom electrode are used as first ports of the resonator; and the middle electrode is a second port. According to the resonator, the excitation mode of the resonator is changed through cooperation of the two layers of piezoelectric films with the same polarization direction and the intermediate electrode, a high-order resonance mode is jointly excited, meanwhile, a high electromechanical coupling coefficient is kept, and a wide fractional bandwidth is achieved at high frequency through the relatively thick piezoelectric films; the problems that a high-frequency resonator is weak in power bearing capacity, narrow in bandwidth, low in quality factor and poor in stability are solved.

The invention provides a composite piezoelectric layer and a preparation method thereof, and relates to the technical field of semiconductors. The preparation method of the composite piezoelectric layer comprises the following steps: providing a first substrate, and depositing a first piezoelectric layer with a first preset thickness on the first substrate; dividing the surface of the first piezoelectric layer into a plurality of detection areas; detecting the concentration of the doped elements in each detection area; if the concentration of the doping element is larger than the preset doping concentration, the detection area is thinned, a first compensation layer is deposited on the thinned detection area, and the first compensation layer is used for reducing the overall doping concentration of the composite piezoelectric layer on the detection area; if the concentration of the doping element is smaller than the preset doping concentration, a second compensation layer is deposited on the detection area, and the second compensation layer is used for improving the overall doping concentration of the composite piezoelectric layer on the detection area. By adopting the preparation method of the composite piezoelectric layer, the deviation of electromechanical coupling coefficients in different areas on the same piezoelectric layer can be reduced.

The invention provides an acoustic resonator, a filter and electronic equipment. The acoustic resonator comprises a substrate layer, a piezoelectric transduction structure layer and an energy adjusting layer, the piezoelectric transduction structure layer is arranged on one side of the substrate layer; the energy adjusting layer is arranged between the substrate layer and the piezoelectric transduction structure layer, the energy adjusting layer comprises a plurality of binding grooves, and each binding groove at least penetrates through the surface, facing the piezoelectric transduction structure layer, of the energy adjusting layer. Through the binding grooves which are arranged at intervals and penetrate through the surface, facing the piezoelectric transduction structure layer, of the energy adjusting layer, sound wave energy is concentrated on the piezoelectric transduction structure layer, leakage of the sound wave energy towards the substrate layer is reduced, and the electromechanical coupling coefficient of the acoustic resonator is improved; the piezoelectric transduction structure layer is supported, collapse of the piezoelectric transduction structure layer is avoided, the situation that the power capacity of the acoustic resonator is reduced is reduced, and therefore the power capacity and the electromechanical coupling coefficient of the acoustic resonator are improved.

The invention discloses a piezoelectric ceramic with high Curie temperature and high temperature stability and a preparation method thereof, the composition general formula of the piezoelectric ceramic is xPb (In1 / 2Nb1 / 2) O3-yPbZrO3-(1-x-y) PbTiO3, the value range of x is 0.20-0.50, and the value range of y is 0.10-0.30. The high Curie temperature, the large piezoelectric coefficient and the high coercive field are achieved, the temperature stability of the excellent piezoelectric property at the room temperature to 300 DEG C is achieved, the change rate of the inverse piezoelectric coefficient within the range from the room temperature to 180 DEG C is only 1.4%, and the change rate of the electromechanical coupling coefficient kp within the temperature range from the room temperature to 275 DEG C is only 4.2%.

The invention relates to the technical field of radio frequency filters, in particular to a 13GXBAR filter design method based on a lithium niobate film. The Euler angle of the lithium niobate thin film is subjected to simulation setting in finite element simulation software, admittance responses under different cutting angles are obtained, an admittance curve with a large electromechanical coupling coefficient and complete stray mode suppression is obtained, the tangential angle is used for simulating an electrode material, the interdigital logarithm, the interdigital distance, the thin film thickness and the metallization ratio, and an admittance curve with a large electromechanical coupling coefficient and complete stray mode suppression is obtained. The method comprises the following steps of: constructing a plurality of resonators, obtaining impedance of each resonator, obtaining material parameters of the corresponding resonator, constructing a three-dimensional force-electricity coupling model of the lithium niobate resonator, carrying out layout design on the physical model in finite element simulation software through a field-circuit coupling method, and coupling force-electricity-sound multi-physical fields to obtain an S parameter curve of the designed XBAR filter; and whether the S parameter result is consistent with the target is verified, so that the forward design of full-simulation driving is realized.

System and methods for a hollow-disk radial-contour mode resonator structure. The hollow disk reduces the dynamic mass and stiffness of the structure. Since electromechanical coupling Cx / Co goes as the reciprocal of mass and stiffness, the hollow disk structure has a considerably stronger electromechanical coupling than a solid one at the same frequency, and thus raises Cx / Co without excessive gap-scaling. Several embodiments of hollow disk resonators are detailed, including asymmetric and symmetric disk configurations.

The invention relates to a method for producing a perovskite-type single crystal, and a perovskite-type single crystal. Provided are: a single crystal which exhibits a high electromechanical coupling coefficient and a high coercive field when used in a piezoelectric element; and a method for producing the single crystal. The method is a method for producing a perovskite-type single crystal, in which a first single crystal of a perovskite type is prepared by firing a raw material containing an acceptor in an air atmosphere, a step (2) including firing the first single crystal in a reducing atmosphere, and a step (3) including firing the single crystal prepared in step (2) in an air atmosphere, in this order, a perovskite-type single crystal having a higher coercive field value than a first single crystal is prepared.

The invention relates to the technical field of communication equipment design, in particular to a design method and system for a broadband annular magnetoelectric antenna with a high electromechanical coupling coefficient. Constructing a vibration analysis model of the annular piezoelectric layer, and calculating to obtain a characteristic equation of rigidity and mass coefficients according to the vibration analysis model; solving the characteristic equation of the rigidity and the quality coefficient to obtain a resonant frequency and an anti-resonant frequency; the resonant frequency and the anti-resonant frequency are substituted into an electromechanical coupling coefficient formula, a size factor is introduced, and a correction formula is constructed; obtaining an optimized size parameter of the annular piezoelectric layer based on a correction formula; optimized size parameters of the annular piezoelectric layer can be obtained through simulation, the design efficiency and the performance stability of the antenna are further improved, and in practical application, the antenna can adapt to the requirements of different frequency bands and scenes more quickly.

The invention belongs to the technical field of functional materials, and particularly relates to a 1-3 type lead metaniobate piezoelectric composite material and a preparation method and application thereof. The composite material takes lead metaniobate ceramic with a tungsten bronze structure as a one-dimensional piezoelectric phase and takes epoxy resin as a three-dimensional polymer phase. The ratio [lambda] / T of the transverse periodic dimension ([lambda]) of the ceramic column to the thickness (T) of the composite material is 0.1-0.6. The preparation method is characterized in that the ceramic column array is formed through precise cutting, cutting parameters are controlled to achieve the lambda / T ratio, and then resin encapsulation, curing, polishing and electrode preparation are conducted. According to the invention, the electromechanical coupling performance and stability of the composite material at ultrahigh temperature are synergistically improved by selecting the lead metaniobate ceramic with high Curie temperature and combining specific lambda / T structural parameters. The obtained material can still keep good performance at 350 DEG C, the maximum thickness electromechanical coupling coefficient kt can reach 0.35, and the material is suitable for high-temperature acoustic logging and underwater acoustic receiving transducers.

This invention provides a method for manufacturing a bulk acoustic wave resonator, including a substrate provision step, an acoustic reflection structure formation step, and a stacked structure formation step. The stacked structure formation step includes: sequentially forming a lower electrode, a first piezoelectric layer, a second piezoelectric layer, and an upper electrode from bottom to top on the substrate or the acoustic reflection structure. The upper electrode, the second piezoelectric layer, the first piezoelectric layer, the lower electrode, and the acoustic reflection structure have an overlapping region in the device thickness direction, which constitutes the resonant region of the bulk acoustic wave resonator. The first piezoelectric layer is implemented using a doped piezoelectric material, which is doped with impurity elements to improve the electromechanical coupling coefficient of the first piezoelectric layer. The second piezoelectric layer is implemented using an undoped piezoelectric material. Correspondingly, this invention also provides a bulk acoustic wave resonator and a filter. Implementing this invention can yield a bulk acoustic wave resonator that balances electromechanical coupling coefficient and quality factor, has low parasitic modes, and exhibits stress balance.

To provide a single crystal having a large electromechanical coupling coefficient and a large coercive electric field when used as a piezoelectric element, and a method for manufacturing the same.SOLUTION: A method for manufacturing a perovskite-type single crystal, the method comprising the steps of (1) firing a raw material containing an acceptor in an air atmosphere to obtain a first perovskite-type single crystal, (2) firing the first single crystal in a reducing atmosphere, and (3) firing the single crystal obtained in step (2) in an air atmosphere, thereby obtaining a perovskite-type single crystal having a higher coercive electric field value than the first single crystal.SELECTED DRAWING: Figure 1

Provided in the present application is an integrated device based on a third-generation semiconductor, and a manufacturing method therefor. The integrated device at least comprises an SiC substrate, a buffer layer, a GaN thin film layer and a piezoelectric material layer, wherein the SiC substrate comprises a first buffer layer stacked on a first SiC substrate and a second buffer layer stacked on a second SiC substrate; the GaN thin film layer at least comprises a first GaN thin film layer stacked on the first buffer layer and a second GaN thin film layer stacked on the second buffer layer; and the first SiC substrate, the first buffer layer, the first GaN thin film layer and the piezoelectric material layer which are stacked are used for forming a multilayer piezoelectric film, and the multilayer piezoelectric film is used for forming an SAW filter. The integrated device prepared by using the technical solution of the present application has a simple structure, greatly reduces the processing cost, can optimize the performance of SAW filters, significantly increases the use frequency of SAWs, and improves the electromechanical coupling coefficients of the SAW filters.

The invention provides a surface acoustic wave device structure and device. The surface acoustic wave device structure comprises a substrate, a piezoelectric layer formed on the substrate 100 and an IDT electrode formed on the surface of the piezoelectric layer. The piezoelectric layer is etched into a first surface and a second surface which have a height difference, and the electrode fingers of the IDT electrode extend along the second direction and partially cover the first surface. The height difference between the first surface and the second surface is regulated and controlled, and the difference value of the height difference does not exceed the thickness of the electrode fingers, so that the local thickness distribution of the piezoelectric layer is changed, the purposes of adjusting the intensity distribution of the surface acoustic wave energy and accurately adjusting the propagation speed of the surface acoustic wave are achieved, and the flexible and smooth adjustment of the electromechanical coupling coefficient (K2) is realized. Meanwhile, the structure mutation formed by the height difference can optimize the reflection path of the surface acoustic wave, and in combination with the partial coverage design of the electrode fingers, the transverse parasitic mode can be inhibited.

The application discloses a blood viscoelasticity sensor electromechanical coupling coefficient and equivalent model parameter measurement method, belongs to the field of blood coagulation analysis, and establishes a mechanical vibration system equivalent model of a blood viscoelasticity sensor and an equivalent circuit of a coil in the sensor, deduces a formula of the coil dynamic impedance module, loads loads with different masses on a sensor probe, calculates M m_n1 、 K m_n1 、 R m_n1 、 M m_n2 、 K m_n2 and R m_n2 ; so that the electromechanical coupling coefficient and the equivalent model parameters of the sensor vibration system are calculated M m 、 K m and R m ; the above measurement steps do not need to disassemble the viscoelasticity sensor from the system, do not depend on specific tooling, and are simple to operate.

The invention discloses a double-layer film surface acoustic wave device based on a filling type structure and a preparation method thereof. The double-layer film surface acoustic wave device comprises a substrate, a first piezoelectric film layer, a second piezoelectric film layer, a protective layer and an interdigital electrode, wherein the first piezoelectric film layer is superposed on the substrate, and the protective layer is superposed on the first piezoelectric film layer; two grooves are formed by etching the protective layer and the first piezoelectric film layer, and the bottoms of the grooves extend into the first piezoelectric film layer; the second piezoelectric film layer is superposed in the groove, and the thickness of the second piezoelectric film layer is consistent with the depth of the groove; and the interdigital electrode is overlapped on the second piezoelectric film layer, so that the double-layer film surface acoustic wave device with a high electromechanical coupling coefficient is realized.

Relaxation lead-based textured ceramic material with low texture temperature and high electrical performance, preparation method and application thereof relates to relaxation lead-based textured ceramic material and preparation method and application thereof. The problem of high texture temperature of low Zr content ceramic, orientation grain presenting core-shell structure, high Zr content ceramic being difficult to be textured with high quality, leading to high voltage electrical performance and low texture temperature of ceramic being unable to be acquired simultaneously is solved. Chemical formula (1-x-y) Pb (A, Nb) O3-x Pb Zr O3-y Pb Ti O3 is prepared at 850 DEG C-1095 DEG C, the texture Zr content can reach more than 50%, along [001] c The orientation degree is greater than 96%, the grain misplacement degree is less than 0.20, there is no core-shell structure, the Curie temperature is greater than or equal to 200 DEG C, the quasi-static piezoelectric coefficient is greater than 1000 pC / N, and the electromechanical coupling coefficient is greater than 0.85. The method comprises the following steps: preparing a mother body fine powder, preparing a ceramic green body by flow casting and stacking and pressing, and preparing a textured ceramic. The method is used in a multilayer piezoelectric device.

The invention belongs to the technical field of piezoelectric ceramics, and particularly relates to a lead antimonate niobate-lead manganese niobate-lead zirconate titanate piezoelectric ceramic material and a method. Comprising a chemical general formula of xPb (Sb1 / 3Nb2 / 3) O3 <-0.04 > Pb (Mn1 / 3Nb2 / 3) O3 <-(0.96-x) Pb < 0.98 > Sr < 0.02 > (Zr < 0.5 > Ti < 0.5 >) O3 < + y wt% Fe < 2 > O < 3 >, wherein x is equal to 0.01 to 0.08, and y is equal to 0.01 to 2. The piezoelectric ceramic material is prepared from the following raw materials: Pb3O4, TiO2, ZrO2, Nb2O5, Sb2O3, MnO2 and SrCO3. The piezoelectric ceramic has a high piezoelectric coefficient and a high electromechanical coupling coefficient at the same time, compared with traditional P-8 series piezoelectric ceramics, the energy conversion rate can be improved, and the piezoelectric ceramic has low dielectric loss and high mechanical quality factor together with P-8 and has low loss in the energy conversion process.

The invention relates to a tetracopolymer piezoelectric film for infrastructure monitoring, a preparation method and preparation equipment, the piezoelectric film comprises polyvinylidene fluoride, trifluoroethylene, chlorofluoroethylene and alkyne fluoride, the electromechanical coupling coefficient is 52%, the piezoelectric charge constant is 220 pm / V. The polyvinylidene fluoride, trifluoroethylene and chlorofluoroethylene are subjected to ternary polymerization, and the piezoelectric charge constant is 220 pm / V. A proper amount of FA monomer is introduced into the ternary polymer, part of CFE is replaced by the FA monomer, part of the FA monomer is embedded into a polymer crystal, the crystal spacing is reduced, a polymer chain is converted from loose 3 / 1 helical conformation to high-polarity all-trans conformation, and the size of a coherent crystalline region in X-ray diffraction is reduced. The proportion of the piezoelectric film has higher electromechanical coupling coefficient and piezoelectric charge constant, and meanwhile, the preparation equipment and the preparation method of the piezoelectric film improve the automation degree, the production efficiency and the production parameter control precision.

To provide a laminate structure having an improved electromechanical coupling coefficient and an electronic device including the laminate structure.SOLUTION: A laminate structure 10 includes a substrate 11 including a main surface 11p, a buffer film 12 formed on the main surface 11p, and a piezoelectric film 13 formed on the buffer film 12. The substrate 11 is made of an Si (100) substrate including the main surface 11p made of an Si (100) plane or an SOI substrate including an SOI layer including a main surface made of the Si (100) plane. The buffer film 12 is epitaxially grown on the main surface 11p, is (100) oriented in a pseudo-cubic crystal display, and is made of a metal oxide represented by the following composition formula (Chemical Formula 1), and x satisfies 0≤x<1. The piezoelectric film 13 is made of a metal nitride containing AlN, and AlN contained in the metal nitride is oriented so that a (0001) plane is inclined with respect to the main surface 11p. (Hf1-xZrx)O2...(Chemical Formula 1)SELECTED DRAWING: Figure 1

The invention discloses a PZT-based high-power piezoelectric ceramic and a preparation method thereof, and belongs to the technical field of piezoelectric ceramic materials. The chemical formula of the antimony manganese-lead zirconate titanate piezoelectric ceramic is 0.05 Pb (Mn < 1 / 3 > Sb < 2 / 3 >) O < 3 >-0.95 Pb < 0.97 > Sr < 0.03 > (Zr < 1 / 2 > Ti < 1 / 2 >) O < 3 + 0.1 wt% of manganese-containing oxide. By doping the manganese-containing oxide into the antimony manganese-lead zirconate titanate matrix, when the piezoelectric coefficient d33 of the prepared antimony manganese-lead zirconate titanate based piezoelectric ceramic reaches 393pC / N, the mechanical quality factor Qm can reach 1708, the electromechanical coupling coefficient is 0.630, the dielectric loss is 0.45%, the Curie temperature is 299 DEG C, and the antimony manganese-lead zirconate titanate based piezoelectric ceramic has excellent comprehensive performance.

The utility model relates to the technical field of sensors, and particularly discloses a sensor for a hydrophone, which comprises a support ring, two support plates and two piezoelectric ceramics. Wherein the two supporting plates are arranged at the two ends of the supporting ring correspondingly, and a sealing cavity is defined by the two supporting plates and the supporting ring; the piezoelectric ceramics are provided with at least two layers of ceramic pieces which are arranged in a laminated mode, and the two piezoelectric ceramics are arranged on the opposite side faces of the two supporting plates respectively and located outside the sealing cavity. By means of the arrangement of the structure, holes do not need to be formed in the supporting ring, the preparation process is simplified, and cost is reduced; meanwhile, the piezoelectric ceramics on one supporting plate are fixed in a one-time bonding mode, loss is reduced, the electromechanical coupling coefficient of the piezoelectric ceramics is remarkably improved, and therefore the sensitivity is improved.

The invention provides a manufacturing method of a filter device and a surface acoustic wave filter, and the manufacturing method comprises the steps: providing a piezoelectric substrate, forming an interdigital electrode layer on the piezoelectric substrate, and enabling the interdigital electrode layer to comprise an interdigital body and an extension part adjacent to the interdigital body; forming a protective layer on the interdigital electrode layer, wherein the protective layer covers the interdigital body and the extension part; and performing dry etching treatment on the protection layer and the extension part to remove the extension part. The technical problem solved by the invention is that key performance parameters of the filter are reduced due to the occurrence of a broadening phenomenon, specifically, ideal electromechanical coupling coefficient (K value) and quality factor (Q value) cannot be obtained, so that the yield of the filter is reduced.

The invention discloses a surface acoustic wave resonance device and a forming method thereof, and a filter, and the device comprises a first interdigital electrode structure located on the surface of a piezoelectric layer, the first interdigital electrode structure comprises a plurality of first electrode strips and a plurality of second electrode strips, and a first interval is formed between the adjacent first electrode strip and second electrode strip in a first direction; the first reflecting grating and the second reflecting grating are located on the surface of the piezoelectric layer, the first reflecting grating, the first interdigital electrode structure and the second reflecting grating are arranged in the first direction, and the first reflecting grating and the second reflecting grating are located on the two sides of the first interdigital electrode structure respectively; the second interdigital electrode structure is connected with the first interdigital electrode structure in parallel, the second interdigital electrode structure comprises a plurality of third electrode strips and a plurality of fourth electrode strips, a second interval is formed between the adjacent third electrode strips and fourth electrode strips in the first direction, and the second interval is larger than the first interval, so that the electromechanical coupling coefficient Kt2 is reduced, and the electromechanical coupling coefficient Kt2 is reduced; and the effect of improving the out-of-band roll-off of the filter is further achieved.

Provided is an acoustic resonator in a transverse excitation shear mode. The acoustic resonator comprises: an acoustic mirror (120), which comprises at least one first acoustic reflecting layer (121, 123, 125) and at least one second acoustic reflecting layer (122, 124), wherein the acoustic impedance of each first acoustic reflecting layer is less than that of each second acoustic reflecting layer; a piezoelectric layer (130), which is arranged on the acoustic mirror, and which comprises lithium niobate of a single crystal material and / or lithium tantalate of a single crystal material; electrode units (142, 143, 144), which are arranged on the piezoelectric layer (130) and are used for forming an electric field; and transverse reflectors (152, 154), which are arranged on the piezoelectric layer, are used for transversely reflecting acoustic waves, and can have a high electromechanical coupling coefficient and a high Q value at a frequency greater than 3 GHz.

The invention discloses a transducer and a preparation method of a 3-1 type piezoelectric composite material layer, and relates to the technical field of transducers, the transducer comprises a shell, the 3-1 type piezoelectric composite material layer, a sound absorption supporting layer and a waterproof sound transmission layer, the 3-1 type piezoelectric composite material layer comprises three-dimensionally communicated piezoelectric phases and a one-dimensionally arranged polymer material, the 3-1 type piezoelectric composite material layer is arranged in the inner space of the shell, the sound absorption supporting layer is used for providing supporting force for the back face of the 3-1 type piezoelectric composite material layer, the waterproof sound transmission layer is connected with the inner wall of the first end of the shell in a sealed mode, and the 3-1 type piezoelectric composite material layer can effectively improve the working bandwidth of the transducer. Meanwhile, the piezoelectric composite material keeps the strong piezoelectric property of the piezoelectric phase, it is ensured that the transducer has a high-efficiency electromechanical coupling coefficient, the parasitic effect can be effectively restrained through the 3-1 type piezoelectric composite material layer, and the technical effect of improving the comprehensive performance of the transducer is achieved.

This invention relates to the field of piezoelectric materials technology, specifically to a chiral nitrogen-containing heterocyclic organic crystalline piezoelectric material and its preparation method. The organic crystalline piezoelectric material is N-cyanoethyl-( S )-2-methylpiperazine hydrochloride, whose core is a one-dimensional hydrogen-bonded chain construction strategy of unilaterally protonated chiral piperazine, with protonated N-cyanoethyl-( S Using 2-methylpiperazine cations as structural building blocks and chloride ions as charge balancers, a highly oriented one-dimensional hydrogen bond chain is constructed by regulating intermolecular hydrogen bonding. This enhances the ordered arrangement of molecular dipoles and optimizes the synergistic mode of lattice strain-polarization response, achieving a breakthrough in piezoelectric properties. The material exhibits a piezoelectric coefficient as high as ±80 pC / N and an electromechanical coupling coefficient as high as 0.35, far exceeding known chiral organic piezoelectric materials. Furthermore, it demonstrates excellent thermal stability and can be widely applied in demanding applications such as micro-pressure sensors, low-frequency vibration detectors, and micro energy harvesters.

The application discloses a Lamb wave resonator, comprising: a first substrate; a piezoelectric layer, a cavity is formed between the first substrate and the piezoelectric layer, the piezoelectric layer is a C-axis inclined piezoelectric film, the angle of C-axis inclination is 48°-68° or -68°-48° by rotating the C-axis orientation of the piezoelectric film, the piezoelectric layer is suitable for exciting the first-order anti-symmetry mode Lamb wave under the action of a transverse electric field; a first metal electrode layer, comprising a metal electrode array formed by a plurality of positive and negative metal electrodes arranged alternately, the metal electrode array forms a transverse electric field, the first metal electrode layer is formed on the piezoelectric layer, and the direction of the transverse electric field is 70°-90° or -90°-70° with the +X axis direction of the global coordinate system of the C-axis inclined piezoelectric film; wherein the piezoelectric layer excites the A1 vibration mode Lamb wave under the action of the transverse electric field, so that the Lamb wave resonator realizes an electromechanical coupling coefficient greater than 15% under the condition that the resonant frequency is greater than 3 GHz.

This invention discloses a piezoelectric ceramic membrane and its preparation method, comprising a modified lead zirconate titanate-based ceramic and a surface functional coating. The modified lead zirconate titanate-based ceramic serves as the substrate, wherein x = 0.52-0.54, and contains A-site doping elements, B-site doping elements, and sintering aids. The surface functional coating is silicon nitride, with a thickness of 100-300 nm, and is prepared by low-pressure chemical vapor deposition (LPCVD). This invention, through La, Nb, Sr, and Mn multi-component composite doping, significantly reduces the temperature coefficients of the piezoelectric constant d31 and the electromechanical coupling coefficient k31, achieving a displacement drift ≤ ±3% over a wide temperature range of -20℃ to 85℃, ensuring stable micro-infusion accuracy under different environments. The integrated composite membrane structure with a central island and annular support improves displacement linearity while ensuring a large stroke, reducing hysteresis and creep, and meeting the ultra-high precision infusion requirements of 0.05U~0.01U.