177 results about "Electromechanical coupling coefficient" patented technology

A ladder type acoustic wave filter is disclosed. The acoustic wave filter can include a plurality of parallel arm resonators and a plurality of series arm resonators, in which an electromechanical coupling coefficient of a parallel arm resonator closest to an input node of the acoustic wave filter among the plurality of parallel arm resonators can be smaller than an electromechanical coupling coefficient of a series arm resonator closest to the input node among the plurality of series arm resonators.

The invention provides a resonator, a filter and electronic equipment. Relates to the technical field of resonators. The resonator can improve the electromechanical coupling coefficient. The resonator comprises a substrate, a first electrode, a plurality of piezoelectric layers and a plurality of second electrodes, the first electrode, the multiple piezoelectric layers and the multiple second electrodes are arranged on the substrate, the multiple piezoelectric layers are provided with first sides and second sides, the multiple second electrodes are located on the first sides and are arranged side by side in the first direction, the first electrodes are located on the second sides, the first sides deviate from the substrate, and the second sides face the substrate; the multiple piezoelectric layers comprise a first piezoelectric layer and a second piezoelectric layer which are stacked; the piezoelectric material of the first piezoelectric layer has a first piezoelectric tensor component e34, the piezoelectric material of the second piezoelectric layer has a second piezoelectric tensor component e34, and the first piezoelectric tensor component e34 and the second piezoelectric tensor component e34 are opposite. By using the piezoelectric layer with opposite piezoelectric tensor components e34, the resonator can have large vibration so as to improve the electromechanical coupling coefficient.

The invention provides a resonator, a filter and electronic equipment. Relates to the technical field of resonators. The resonator can improve the electromechanical coupling coefficient. The resonator can comprise a substrate, a first electrode, a piezoelectric transduction layer and a plurality of second electrodes, the first electrode, the piezoelectric transduction layer and the multiple second electrodes are arranged on the substrate, the piezoelectric transduction layer is provided with a first side and a second side, the multiple second electrodes are located on the first side and are arranged side by side in the first direction, the first electrode is located on the second side, the first side deviates from the substrate, and the second side faces the substrate; the piezoelectric transduction layer comprises a first piezoelectric layer and a second piezoelectric layer which are stacked; the first piezoelectric layer has a first piezoelectric tensor component e33, the second piezoelectric layer has a second piezoelectric tensor component e33, and the first piezoelectric tensor component e33 and the second piezoelectric tensor component e33 are opposite. By using the adjacent piezoelectric layers with opposite piezoelectric tensor components e33, the resonator can have large vibration so as to improve the electromechanical coupling coefficient.

The invention provides a bulk acoustic wave resonator, a filter and electronic equipment. The bulk acoustic wave resonator comprises a substrate layer, a Bragg reflection layer arranged on the substrate layer and a piezoelectric transduction structure layer arranged on the Bragg reflection layer. The Bragg reflection layer comprises a plurality of film layers which are arranged in a stacked mode, and the refractive indexes of every two adjacent film layers are different; the piezoelectric transduction structure layer comprises a piezoelectric layer and an electrode layer which are stacked; at least one film layer, close to the piezoelectric transduction structure layer, in the Bragg reflection layer is a preset film layer, the preset film layer comprises cavity parts and supporting parts, the cavity parts and the supporting parts are alternately arranged in the first direction, and the first direction is parallel to the substrate layer. According to the bulk acoustic wave resonator, acoustic wave energy is concentrated on the piezoelectric layer through the cavity parts, the electromechanical coupling coefficient of the bulk acoustic wave resonator is increased, under the alternate arrangement of the cavity parts and the supporting parts, the slowness curve of the main vibration mode of the bulk acoustic wave resonator is flattened, the transverse mode and stray response are restrained, and therefore the quality factor of the bulk acoustic wave resonator is improved.

The present disclosure provides a multi-coefficient coupled-mode surface acoustic wave resonator and a manufacturing method therefor. During operation of the surface acoustic wave resonator, at least two different piezoelectric coefficients are coupled and jointly excite acoustic waves. The multi-coefficient coupled-mode surface acoustic wave resonator comprises: a substrate; a piezoelectric layer, provided on the substrate; an electrode unit, provided on the surface of the piezoelectric layer and comprising at least one interdigital electrode pair; and a reflective grating unit, comprising at least two grating structures which are symmetrically arranged on the two sides of the electrode unit, wherein the equivalent density of the electrode unit is greater than 4000kg / m3. The electric field distribution is changed by changing the mass loading effect of the interdigital electrode pair and the ratio of the electrode wavelength to the thickness of the piezoelectric layer, such that at least two piezoelectric coefficients are mutually coupled to jointly excite acoustic waves, thus achieving the surface acoustic wave resonator having an electromechanical coupling coefficient exceeding 25%.

The invention relates to the field of microelectronic devices, in particular to a bulk acoustic wave resonator with a double-layer piezoelectric film structure, a preparation method and a filter, the bulk acoustic wave resonator comprises a cap wafer, and a dry film, a passivation layer, a silicon oxide layer, a high-resistance silicon wafer and RDL metal are sequentially arranged on the cap wafer; the dry film and the cap wafer form a dry film cavity, the passivation layer located above the dry film cavity extends into the dry film cavity, and a top electrode, a first piezoelectric film, a middle electrode, a second piezoelectric film and a bottom electrode are sequentially arranged on the passivation layer; the top electrode and the bottom electrode are used as first ports of the resonator; and the middle electrode is a second port. According to the resonator, the excitation mode of the resonator is changed through cooperation of the two layers of piezoelectric films with the same polarization direction and the intermediate electrode, a high-order resonance mode is jointly excited, meanwhile, a high electromechanical coupling coefficient is kept, and a wide fractional bandwidth is achieved at high frequency through the relatively thick piezoelectric films; the problems that a high-frequency resonator is weak in power bearing capacity, narrow in bandwidth, low in quality factor and poor in stability are solved.

The invention provides a composite piezoelectric layer and a preparation method thereof, and relates to the technical field of semiconductors. The preparation method of the composite piezoelectric layer comprises the following steps: providing a first substrate, and depositing a first piezoelectric layer with a first preset thickness on the first substrate; dividing the surface of the first piezoelectric layer into a plurality of detection areas; detecting the concentration of the doped elements in each detection area; if the concentration of the doping element is larger than the preset doping concentration, the detection area is thinned, a first compensation layer is deposited on the thinned detection area, and the first compensation layer is used for reducing the overall doping concentration of the composite piezoelectric layer on the detection area; if the concentration of the doping element is smaller than the preset doping concentration, a second compensation layer is deposited on the detection area, and the second compensation layer is used for improving the overall doping concentration of the composite piezoelectric layer on the detection area. By adopting the preparation method of the composite piezoelectric layer, the deviation of electromechanical coupling coefficients in different areas on the same piezoelectric layer can be reduced.

The invention provides an acoustic resonator, a filter and electronic equipment. The acoustic resonator comprises a substrate layer, a piezoelectric transduction structure layer and an energy adjusting layer, the piezoelectric transduction structure layer is arranged on one side of the substrate layer; the energy adjusting layer is arranged between the substrate layer and the piezoelectric transduction structure layer, the energy adjusting layer comprises a plurality of binding grooves, and each binding groove at least penetrates through the surface, facing the piezoelectric transduction structure layer, of the energy adjusting layer. Through the binding grooves which are arranged at intervals and penetrate through the surface, facing the piezoelectric transduction structure layer, of the energy adjusting layer, sound wave energy is concentrated on the piezoelectric transduction structure layer, leakage of the sound wave energy towards the substrate layer is reduced, and the electromechanical coupling coefficient of the acoustic resonator is improved; the piezoelectric transduction structure layer is supported, collapse of the piezoelectric transduction structure layer is avoided, the situation that the power capacity of the acoustic resonator is reduced is reduced, and therefore the power capacity and the electromechanical coupling coefficient of the acoustic resonator are improved.

A surface acoustic wave device has a piezoelectric substrate having a cut angle (e.g., the piezoelectric angle is cut so as to have a crystal orientation) that allows the surface acoustic wave device to operate as a longitudinally leaky surface acoustic wave device that confines the acoustic wave energy within the piezoelectric substrate and that has less propagation attenuation and a higher electromechanical coupling coefficient k2.

The invention discloses a piezoelectric ceramic with high Curie temperature and high temperature stability and a preparation method thereof, the composition general formula of the piezoelectric ceramic is xPb (In1 / 2Nb1 / 2) O3-yPbZrO3-(1-x-y) PbTiO3, the value range of x is 0.20-0.50, and the value range of y is 0.10-0.30. The high Curie temperature, the large piezoelectric coefficient and the high coercive field are achieved, the temperature stability of the excellent piezoelectric property at the room temperature to 300 DEG C is achieved, the change rate of the inverse piezoelectric coefficient within the range from the room temperature to 180 DEG C is only 1.4%, and the change rate of the electromechanical coupling coefficient kp within the temperature range from the room temperature to 275 DEG C is only 4.2%.

The invention relates to the technical field of radio frequency filters, in particular to a 13GXBAR filter design method based on a lithium niobate film. The Euler angle of the lithium niobate thin film is subjected to simulation setting in finite element simulation software, admittance responses under different cutting angles are obtained, an admittance curve with a large electromechanical coupling coefficient and complete stray mode suppression is obtained, the tangential angle is used for simulating an electrode material, the interdigital logarithm, the interdigital distance, the thin film thickness and the metallization ratio, and an admittance curve with a large electromechanical coupling coefficient and complete stray mode suppression is obtained. The method comprises the following steps of: constructing a plurality of resonators, obtaining impedance of each resonator, obtaining material parameters of the corresponding resonator, constructing a three-dimensional force-electricity coupling model of the lithium niobate resonator, carrying out layout design on the physical model in finite element simulation software through a field-circuit coupling method, and coupling force-electricity-sound multi-physical fields to obtain an S parameter curve of the designed XBAR filter; and whether the S parameter result is consistent with the target is verified, so that the forward design of full-simulation driving is realized.

The invention relates to the technical field of bulk acoustic wave resonators, and particularly provides a bulk acoustic wave resonator and a design method thereof, and the method comprises the steps: determining the scandium doping concentration and thickness corresponding to a plurality of piezoelectric layers according to a target effective electromechanical coupling coefficient and a target resonator frequency, determining an electrode material and corresponding acoustic impedance according to the target loss performance; for each piezoelectric layer, acoustic parameters, piezoelectric coupling parameters and static capacitance parameters are calculated according to the corresponding scandium doping concentration and thickness, and the acoustic parameters comprise acoustic impedance; calculating the interface impedance of the adjacent layer structures according to the acoustic impedance of the adjacent layer structures; inputting all the acoustic parameters, all the static capacitance parameters, all the piezoelectric coupling parameters, the electrode material and all the interface impedance into a Mason model to complete the design of the bulk acoustic wave resonator; according to the method, the Mason model can comprehensively consider the influence of the physical parameter difference of a plurality of piezoelectric layers on the bulk acoustic wave resonator and the interfacial effect between the layer structures.

The invention discloses a lithium niobate acoustic superlattice bulk acoustic wave resonator device based on an inclined domain structure and a design method thereof.The bulk acoustic wave resonator device comprises an upper surface electrode, a lithium niobate acoustic superlattice and a lower surface electrode which are sequentially stacked from top to bottom, the lithium niobate acoustic superlattice comprises positive domain regions and negative domain regions which are alternately arranged, and the positive domain regions and the negative domain regions are alternately arranged. And the positive domain region and the negative domain region are inclined domains. The invention also provides a design method of the bulk acoustic wave resonance device, which comprises the following steps of: firstly, acquiring simulation parameters through numerical simulation, and then designing different cut types of lithium niobate acoustic superlattices with positive domain regions and negative domain regions which are periodically and alternately arranged and inclined structures according to the simulation parameters; and finally, respectively selecting proper electrodes on the upper surface and the lower surface of the lithium niobate acoustic superlattice to form the bulk acoustic wave resonator. The bulk acoustic wave resonator is simple in structure, and has more working resonance modes and a higher electromechanical coupling coefficient.

System and methods for a hollow-disk radial-contour mode resonator structure. The hollow disk reduces the dynamic mass and stiffness of the structure. Since electromechanical coupling Cx / Co goes as the reciprocal of mass and stiffness, the hollow disk structure has a considerably stronger electromechanical coupling than a solid one at the same frequency, and thus raises Cx / Co without excessive gap-scaling. Several embodiments of hollow disk resonators are detailed, including asymmetric and symmetric disk configurations.

The invention relates to a method for producing a perovskite-type single crystal, and a perovskite-type single crystal. Provided are: a single crystal which exhibits a high electromechanical coupling coefficient and a high coercive field when used in a piezoelectric element; and a method for producing the single crystal. The method is a method for producing a perovskite-type single crystal, in which a first single crystal of a perovskite type is prepared by firing a raw material containing an acceptor in an air atmosphere, a step (2) including firing the first single crystal in a reducing atmosphere, and a step (3) including firing the single crystal prepared in step (2) in an air atmosphere, in this order, a perovskite-type single crystal having a higher coercive field value than a first single crystal is prepared.

The invention relates to the technical field of communication equipment design, in particular to a design method and system for a broadband annular magnetoelectric antenna with a high electromechanical coupling coefficient. Constructing a vibration analysis model of the annular piezoelectric layer, and calculating to obtain a characteristic equation of rigidity and mass coefficients according to the vibration analysis model; solving the characteristic equation of the rigidity and the quality coefficient to obtain a resonant frequency and an anti-resonant frequency; the resonant frequency and the anti-resonant frequency are substituted into an electromechanical coupling coefficient formula, a size factor is introduced, and a correction formula is constructed; obtaining an optimized size parameter of the annular piezoelectric layer based on a correction formula; optimized size parameters of the annular piezoelectric layer can be obtained through simulation, the design efficiency and the performance stability of the antenna are further improved, and in practical application, the antenna can adapt to the requirements of different frequency bands and scenes more quickly.

The invention discloses a bulk acoustic wave resonance device, a forming method thereof and a filter. The middle layer is located on the substrate, and the middle layer comprises a cavity and a plurality of defect sub-layers with crystal defects; the piezoelectric layer is located on the middle layer, the piezoelectric layer comprises a first side and a second side which are opposite to each other, and the middle layer and the substrate are located on the first side; the first electrode layer is located on the first side of the piezoelectric layer; the second electrode layer is located on the second side of the piezoelectric layer, and the projection of the first electrode layer and the projection of the second electrode layer towards the direction of the substrate have an overlapped area. The crystal defect in the middle layer can form a charge trap, and a conductive plane can be prevented from being formed on the surface of the substrate, so that the generated parasitic coupling phenomenon is effectively inhibited, the electric loss is reduced, and the Q value of the resonance device or the electromechanical coupling coefficient (Kt) of the resonance device is improved.

The invention belongs to the technical field of functional materials, and particularly relates to a 1-3 type lead metaniobate piezoelectric composite material and a preparation method and application thereof. The composite material takes lead metaniobate ceramic with a tungsten bronze structure as a one-dimensional piezoelectric phase and takes epoxy resin as a three-dimensional polymer phase. The ratio [lambda] / T of the transverse periodic dimension ([lambda]) of the ceramic column to the thickness (T) of the composite material is 0.1-0.6. The preparation method is characterized in that the ceramic column array is formed through precise cutting, cutting parameters are controlled to achieve the lambda / T ratio, and then resin encapsulation, curing, polishing and electrode preparation are conducted. According to the invention, the electromechanical coupling performance and stability of the composite material at ultrahigh temperature are synergistically improved by selecting the lead metaniobate ceramic with high Curie temperature and combining specific lambda / T structural parameters. The obtained material can still keep good performance at 350 DEG C, the maximum thickness electromechanical coupling coefficient kt can reach 0.35, and the material is suitable for high-temperature acoustic logging and underwater acoustic receiving transducers.

This invention provides a method for manufacturing a bulk acoustic wave resonator, including a substrate provision step, an acoustic reflection structure formation step, and a stacked structure formation step. The stacked structure formation step includes: sequentially forming a lower electrode, a first piezoelectric layer, a second piezoelectric layer, and an upper electrode from bottom to top on the substrate or the acoustic reflection structure. The upper electrode, the second piezoelectric layer, the first piezoelectric layer, the lower electrode, and the acoustic reflection structure have an overlapping region in the device thickness direction, which constitutes the resonant region of the bulk acoustic wave resonator. The first piezoelectric layer is implemented using a doped piezoelectric material, which is doped with impurity elements to improve the electromechanical coupling coefficient of the first piezoelectric layer. The second piezoelectric layer is implemented using an undoped piezoelectric material. Correspondingly, this invention also provides a bulk acoustic wave resonator and a filter. Implementing this invention can yield a bulk acoustic wave resonator that balances electromechanical coupling coefficient and quality factor, has low parasitic modes, and exhibits stress balance.

To provide a single crystal having a large electromechanical coupling coefficient and a large coercive electric field when used as a piezoelectric element, and a method for manufacturing the same.SOLUTION: A method for manufacturing a perovskite-type single crystal, the method comprising the steps of (1) firing a raw material containing an acceptor in an air atmosphere to obtain a first perovskite-type single crystal, (2) firing the first single crystal in a reducing atmosphere, and (3) firing the single crystal obtained in step (2) in an air atmosphere, thereby obtaining a perovskite-type single crystal having a higher coercive electric field value than the first single crystal.SELECTED DRAWING: Figure 1

Provided in the present application is an integrated device based on a third-generation semiconductor, and a manufacturing method therefor. The integrated device at least comprises an SiC substrate, a buffer layer, a GaN thin film layer and a piezoelectric material layer, wherein the SiC substrate comprises a first buffer layer stacked on a first SiC substrate and a second buffer layer stacked on a second SiC substrate; the GaN thin film layer at least comprises a first GaN thin film layer stacked on the first buffer layer and a second GaN thin film layer stacked on the second buffer layer; and the first SiC substrate, the first buffer layer, the first GaN thin film layer and the piezoelectric material layer which are stacked are used for forming a multilayer piezoelectric film, and the multilayer piezoelectric film is used for forming an SAW filter. The integrated device prepared by using the technical solution of the present application has a simple structure, greatly reduces the processing cost, can optimize the performance of SAW filters, significantly increases the use frequency of SAWs, and improves the electromechanical coupling coefficients of the SAW filters.

The invention provides a surface acoustic wave device structure and device. The surface acoustic wave device structure comprises a substrate, a piezoelectric layer formed on the substrate 100 and an IDT electrode formed on the surface of the piezoelectric layer. The piezoelectric layer is etched into a first surface and a second surface which have a height difference, and the electrode fingers of the IDT electrode extend along the second direction and partially cover the first surface. The height difference between the first surface and the second surface is regulated and controlled, and the difference value of the height difference does not exceed the thickness of the electrode fingers, so that the local thickness distribution of the piezoelectric layer is changed, the purposes of adjusting the intensity distribution of the surface acoustic wave energy and accurately adjusting the propagation speed of the surface acoustic wave are achieved, and the flexible and smooth adjustment of the electromechanical coupling coefficient (K2) is realized. Meanwhile, the structure mutation formed by the height difference can optimize the reflection path of the surface acoustic wave, and in combination with the partial coverage design of the electrode fingers, the transverse parasitic mode can be inhibited.

The application discloses a blood viscoelasticity sensor electromechanical coupling coefficient and equivalent model parameter measurement method, belongs to the field of blood coagulation analysis, and establishes a mechanical vibration system equivalent model of a blood viscoelasticity sensor and an equivalent circuit of a coil in the sensor, deduces a formula of the coil dynamic impedance module, loads loads with different masses on a sensor probe, calculates M m_n1 、 K m_n1 、 R m_n1 、 M m_n2 、 K m_n2 and R m_n2 ; so that the electromechanical coupling coefficient and the equivalent model parameters of the sensor vibration system are calculated M m 、 K m and R m ; the above measurement steps do not need to disassemble the viscoelasticity sensor from the system, do not depend on specific tooling, and are simple to operate.

The invention discloses a double-layer film surface acoustic wave device based on a filling type structure and a preparation method thereof. The double-layer film surface acoustic wave device comprises a substrate, a first piezoelectric film layer, a second piezoelectric film layer, a protective layer and an interdigital electrode, wherein the first piezoelectric film layer is superposed on the substrate, and the protective layer is superposed on the first piezoelectric film layer; two grooves are formed by etching the protective layer and the first piezoelectric film layer, and the bottoms of the grooves extend into the first piezoelectric film layer; the second piezoelectric film layer is superposed in the groove, and the thickness of the second piezoelectric film layer is consistent with the depth of the groove; and the interdigital electrode is overlapped on the second piezoelectric film layer, so that the double-layer film surface acoustic wave device with a high electromechanical coupling coefficient is realized.

Relaxation lead-based textured ceramic material with low texture temperature and high electrical performance, preparation method and application thereof relates to relaxation lead-based textured ceramic material and preparation method and application thereof. The problem of high texture temperature of low Zr content ceramic, orientation grain presenting core-shell structure, high Zr content ceramic being difficult to be textured with high quality, leading to high voltage electrical performance and low texture temperature of ceramic being unable to be acquired simultaneously is solved. Chemical formula (1-x-y) Pb (A, Nb) O3-x Pb Zr O3-y Pb Ti O3 is prepared at 850 DEG C-1095 DEG C, the texture Zr content can reach more than 50%, along [001] c The orientation degree is greater than 96%, the grain misplacement degree is less than 0.20, there is no core-shell structure, the Curie temperature is greater than or equal to 200 DEG C, the quasi-static piezoelectric coefficient is greater than 1000 pC / N, and the electromechanical coupling coefficient is greater than 0.85. The method comprises the following steps: preparing a mother body fine powder, preparing a ceramic green body by flow casting and stacking and pressing, and preparing a textured ceramic. The method is used in a multilayer piezoelectric device.

The invention belongs to the technical field of piezoelectric ceramics, and particularly relates to a lead antimonate niobate-lead manganese niobate-lead zirconate titanate piezoelectric ceramic material and a method. Comprising a chemical general formula of xPb (Sb1 / 3Nb2 / 3) O3 <-0.04 > Pb (Mn1 / 3Nb2 / 3) O3 <-(0.96-x) Pb < 0.98 > Sr < 0.02 > (Zr < 0.5 > Ti < 0.5 >) O3 < + y wt% Fe < 2 > O < 3 >, wherein x is equal to 0.01 to 0.08, and y is equal to 0.01 to 2. The piezoelectric ceramic material is prepared from the following raw materials: Pb3O4, TiO2, ZrO2, Nb2O5, Sb2O3, MnO2 and SrCO3. The piezoelectric ceramic has a high piezoelectric coefficient and a high electromechanical coupling coefficient at the same time, compared with traditional P-8 series piezoelectric ceramics, the energy conversion rate can be improved, and the piezoelectric ceramic has low dielectric loss and high mechanical quality factor together with P-8 and has low loss in the energy conversion process.

The invention relates to a tetracopolymer piezoelectric film for infrastructure monitoring, a preparation method and preparation equipment, the piezoelectric film comprises polyvinylidene fluoride, trifluoroethylene, chlorofluoroethylene and alkyne fluoride, the electromechanical coupling coefficient is 52%, the piezoelectric charge constant is 220 pm / V. The polyvinylidene fluoride, trifluoroethylene and chlorofluoroethylene are subjected to ternary polymerization, and the piezoelectric charge constant is 220 pm / V. A proper amount of FA monomer is introduced into the ternary polymer, part of CFE is replaced by the FA monomer, part of the FA monomer is embedded into a polymer crystal, the crystal spacing is reduced, a polymer chain is converted from loose 3 / 1 helical conformation to high-polarity all-trans conformation, and the size of a coherent crystalline region in X-ray diffraction is reduced. The proportion of the piezoelectric film has higher electromechanical coupling coefficient and piezoelectric charge constant, and meanwhile, the preparation equipment and the preparation method of the piezoelectric film improve the automation degree, the production efficiency and the production parameter control precision.

To provide a laminate structure having an improved electromechanical coupling coefficient and an electronic device including the laminate structure.SOLUTION: A laminate structure 10 includes a substrate 11 including a main surface 11p, a buffer film 12 formed on the main surface 11p, and a piezoelectric film 13 formed on the buffer film 12. The substrate 11 is made of an Si (100) substrate including the main surface 11p made of an Si (100) plane or an SOI substrate including an SOI layer including a main surface made of the Si (100) plane. The buffer film 12 is epitaxially grown on the main surface 11p, is (100) oriented in a pseudo-cubic crystal display, and is made of a metal oxide represented by the following composition formula (Chemical Formula 1), and x satisfies 0≤x<1. The piezoelectric film 13 is made of a metal nitride containing AlN, and AlN contained in the metal nitride is oriented so that a (0001) plane is inclined with respect to the main surface 11p. (Hf1-xZrx)O2...(Chemical Formula 1)SELECTED DRAWING: Figure 1

The invention discloses a PZT-based high-power piezoelectric ceramic and a preparation method thereof, and belongs to the technical field of piezoelectric ceramic materials. The chemical formula of the antimony manganese-lead zirconate titanate piezoelectric ceramic is 0.05 Pb (Mn < 1 / 3 > Sb < 2 / 3 >) O < 3 >-0.95 Pb < 0.97 > Sr < 0.03 > (Zr < 1 / 2 > Ti < 1 / 2 >) O < 3 + 0.1 wt% of manganese-containing oxide. By doping the manganese-containing oxide into the antimony manganese-lead zirconate titanate matrix, when the piezoelectric coefficient d33 of the prepared antimony manganese-lead zirconate titanate based piezoelectric ceramic reaches 393pC / N, the mechanical quality factor Qm can reach 1708, the electromechanical coupling coefficient is 0.630, the dielectric loss is 0.45%, the Curie temperature is 299 DEG C, and the antimony manganese-lead zirconate titanate based piezoelectric ceramic has excellent comprehensive performance.

The utility model relates to the technical field of sensors, and particularly discloses a sensor for a hydrophone, which comprises a support ring, two support plates and two piezoelectric ceramics. Wherein the two supporting plates are arranged at the two ends of the supporting ring correspondingly, and a sealing cavity is defined by the two supporting plates and the supporting ring; the piezoelectric ceramics are provided with at least two layers of ceramic pieces which are arranged in a laminated mode, and the two piezoelectric ceramics are arranged on the opposite side faces of the two supporting plates respectively and located outside the sealing cavity. By means of the arrangement of the structure, holes do not need to be formed in the supporting ring, the preparation process is simplified, and cost is reduced; meanwhile, the piezoelectric ceramics on one supporting plate are fixed in a one-time bonding mode, loss is reduced, the electromechanical coupling coefficient of the piezoelectric ceramics is remarkably improved, and therefore the sensitivity is improved.