49 results about "Ferroelectricity" patented technology

The application relates to a ferroelectric monolayer vanadium trichloride film and a preparation method thereof. The method comprises the following steps: evaporating and depositing VCl3 powder on the surface of a NbSe2 substrate under an ultrahigh vacuum atmosphere, and performing annealing treatment, so that the ferroelectric monolayer vanadium trichloride film is obtained. The sample preparation strategy of molecular beam epitaxy under an ultrahigh vacuum environment is used, high-purity VCl3 powder is evaporated and deposited on a NbSe2 substrate, an atomically flat monolayer VCl3 sample is obtained through annealing treatment, in-situ scanning tunneling microscope technology and scanning tunneling spectrum technology are combined, and it is determined that the monolayer VCl3 is a semiconductor material with ferroelectricity. The method provides a new method and idea for introducing ferroelectricity in the family of transition metal trichlorides, has high application potential and scientific research value, meanwhile, the successful introduction of ferroelectricity in the system also provides a new platform for carrying out multi-state regulation and research.

The present disclosure provides a nitride semiconductor transistor capable of improving current density. The nitride semiconductor transistor includes: a first channel layer having a first upper surface having nitrogen polarity; the ferroelectric nitride semiconductor layer is positioned on the first upper surface and is provided with a second upper surface with metal polarity; the second channel layer is positioned on the second upper surface and is provided with a third upper surface with metal polarity; and the first barrier layer is positioned on the third upper surface and is provided with a fourth upper surface with metal polarity.

Disclosed is a polycrystalline ceramic dielectric comprising: crystal grain bulks made of a barium titanate-based ceramic; and grain boundaries comprising interfaces between the crystal grain bulks, wherein the composition of the grain boundaries is controlled using dopants. By controlling the grain boundary composition using dopants so that the dopants are distributed across a width of 5 nm or less and using a nano-sized, fine-grained barium titanate-based ceramic precursor, the grain boundary structure within the polycrystals may maintain electroneutrality, and their ferroelectricity may be controlled, thereby allowing for smoother polarization reaction. Accordingly, the present disclosure provides polycrystalline ceramic dielectrics that have dielectric properties such as high permittivity and low dielectric losses in a wide frequency range, a small amount of reduction in electric field-dependent relative permittivity, high temperature stability, non-reducibility under a reduction sintering condition, and resulting high insulation resistance, and a preparation method therefor.

The invention belongs to the technical field of multiferroic materials, and relates to a design method of a multiferroic body based on a vanadium-doped two-dimensional ferroelectric and the multiferroic body. Performing cell expansion on the single-layer NbOI2 primitive cell in different directions to obtain supercells with different sizes; the method comprises the following steps: doping supercells with different sizes by taking vanadium as a doping element to obtain a doping configuration of each supercell under different doping concentrations; taking the doping configuration with the lowest total energy of the ferromagnetic state and the antiferromagnetic state under each doping concentration as the ground state configuration of the doping concentration; calculating band gaps Eg of ground state configurations with different doping concentrations and spontaneous ferroelectric polarization intensity along a b axis, drawing a double-Y-axis curve graph by taking the doping concentrations as abscissas and the spontaneous ferroelectric polarization intensity and the band gaps Eg as ordinates, and dividing a multiferroic phase region and a magnetic semimetal phase region to obtain a doping concentration-physical property evolution phase diagram; and obtaining a corresponding doping concentration value range when the ground state configuration has a multiferroic phase with ferroelectricity and antiferromagnetism so as to design a multiferroic body.

The invention provides a semiconductor structure and a preparation method thereof, the semiconductor structure comprises a substrate and a superlattice structure, the superlattice structure comprises more than one periodic unit structure, each periodic unit structure comprises more than two layers of Al (1-x) ScxN, and x is a number greater than 0 and less than 1; x of Al (1-x) ScxN in each layer in the periodic unit structure is sequentially reduced from the direction far away from the substrate to the direction close to the substrate. According to the invention, a periodic unit structure composed of Al (1-x) ScxN arranged according to the preset scandium doping concentration is formed on the substrate to form a superlattice structure, abnormal grains generated when aluminum nitride doped with high scandium concentration grows on the substrate are inhibited, the crystal quality and the surface roughness of Al (1-x) ScxN are optimized, the piezoelectric and ferroelectric properties of Al (1-x) ScxN are improved, and relatively high polarization intensity is realized; meanwhile, the thickness of each layer of Al (1-x) ScxN in the superlattice structure is set, so that the thick high-scandium-concentration doped aluminum nitride inhibits the generation of high-resistance doped abnormal grains, the thin high-scandium-concentration doped aluminum nitride reduces the ferroelectric coercive field intensity of the film, and the dual improvement of the performance reliability and ferroelectric performance of the Al (1-x) ScxN is realized.

A method for improving the nucleation of the γ phase in polyvinylidene fluoride (PVDF), a γ phase PVDF dielectric film based on the nucleation method, and a preparation method thereof are disclosed. The method involves using ceramic powder in the PVDF film material to enhance the nucleation ability of the γ phase crystals, improve the hydrophilicity of the PVDF film, and enhance the high-temperature dielectric properties of the PVDF film material. The dielectric film raw materials include 0-0.2 parts of ceramic powder (NBT), 10 parts of polyvinylidene fluoride (PVDF), and 200-204 parts of N,N-dimethylformamide (DMF). The preparation method is as follows: 1) Using N,N-dimethylformamide... 1) Prepare a 5% ceramic powder / polyvinylidene fluoride solution using amide as a solvent; 2) Drop the solution from step 1) onto a glass slide and cure it into a film in a vacuum oven at 68-72℃; 3) Melt the cured film obtained in step 2) on a hot stage at 200℃-220℃ to eliminate thermal history, and then rapidly cool it to 150-170℃ for isothermal crystallization until the blended film is completely crystallized; The preparation method of the γ-phase polyvinylidene fluoride dielectric film of the present invention is simple, convenient to operate, and has excellent performance, such as high temperature resistance, corrosion resistance, and strong piezoelectricity and ferroelectricity.

The invention discloses a copper ion intercalation two-dimensional beta-phase indium selenide material as well as a preparation method and application thereof. The method comprises the following steps: soaking a substrate loaded with a beta-InSe nanosheet in an organic solution of copper hexafluorophosphate tetraacetonitrile with the pH value of 4.0-6.5, and preparing the copper ion intercalation two-dimensional beta-InSe material through a solution heating and soaking method. According to the copper ion intercalation two-dimensional beta-phase indium selenide material and the preparation method thereof, a mild and efficient copper ion solution intercalation process is adopted, highly uniform and ordered distribution of copper between two-dimensional beta-InSe layers is achieved, the ferroelectric property and the electrical transport property of the copper ion intercalation two-dimensional beta-phase indium selenide material are regulated and controlled at the same time, and the prepared copper ion intercalation two-dimensional beta-phase indium selenide material is suitable for constructing a high-performance ferroelectric device.

The embodiment of the invention provides a memory cell, a memory array, a memory and electronic equipment, relates to the technical field of semiconductor memory, and aims to solve the problem of high power consumption of a ferroelectric memory. A storage capacitor of the storage unit comprises a first electrode, a ferroelectric layer, a first metal oxide layer and a second electrode. The first metal oxide layer is stacked between the first electrode and the ferroelectric layer. The metal element of the first metal oxide in the first metal oxide layer comprises at least one metal element except the hafnium element in the third group element, the fourth group element and the fifth group element, and the first metal oxide layer applies a proper pulling force to the ferroelectric layer to stretch the crystal structure of the ferroelectric layer; and the crystal structure of the ferroelectric layer has lattice distortion so as to increase the proportion of the O phase in the ferroelectric layer, so that the ferroelectricity of the ferroelectric layer is increased, the ferroelectric polarity of the memory is easier to turn, and the working voltage and power consumption are reduced.

To provide a semiconductor device which performs calculation by using a transistor having a large S value or operation in a subthreshold region of the transistor.SOLUTION: The transistor includes an oxide semiconductor layer having a channel formation region, a gate electrode having a region overlapping with the oxide semiconductor layer with an insulating layer interposed therebetween, and a first conductive layer having a region overlapping with the oxide semiconductor layer with a ferroelectric layer interposed therebetween. In particular, the ferroelectric layer has a crystal, and the crystal has a crystal structure that exhibits ferroelectricity.SELECTED DRAWING: Figure 1

The invention discloses a self-supporting piezoelectric film and a preparation method thereof. The preparation method of the self-supporting piezoelectric film comprises the following steps: providing an initial layered structure body; the device sequentially comprises a substrate, a conductive electrode layer and a piezoelectric film layer from bottom to top, the substrate contains surface ions, and one side containing the surface ions is in contact with the conductive electrode layer; and a polar solvent is introduced between the substrate and the conductive electrode layer, standing is carried out, the polar solvent and surface ions on the substrate are subjected to solvation, and the substrate is separated from the conductive electrode layer and the piezoelectric film layer. The substrate containing the surface ions is adopted, the polar solvent is introduced to be subjected to solvation with the surface ions, the substrate is separated from the conductive electrode layer and the piezoelectric film layer, the problem that an existing rigid substrate is difficult to peel off is solved, and the obtained film has excellent crystal texture and microstructure integrity; the mechanical clamping effect of the rigid substrate is eliminated, and the piezoelectric and ferroelectric properties are better.

A new LC medium exhibits a ferroelectric-nematic phase at ambient temperature. It comprises at least one or more compounds selected from each of the groups of formula IA, IB and IC-1 / IC-2 / IC-3, wherein the variable groups have the meanings indicated in the text and claims. The mixture can be used in electro-optics, electronics, electromechanics and other applications for materials with very high dielectric permittivity and other energy saving applications.

The present invention relates to the manufacturing of devices that comprise films having piezoelectric, pyroelectric and / or ferroelectric properties, obtained at room temperature by aerosol deposition (AD). Advantageously, the devices according to the invention are functional without requiring subsequent heat treatment, and can be produced on various types of substrates, rigid or flexible, with varied thicknesses, whether in a thin layer (< 10 μm) or a thick layer (> 10 μm). More particularly, the invention relates to ceramic-polymer composite films having piezoelectric, pyroelectric or ferroelectric properties, obtained by AD, wherein the rate of polymer integrated into the film is controlled in order to obtain films that are functional immediately after deposition. The interconnectivity of the phases and the diameter of the ceramic grains are also controlled, ensuring that the desired functional properties are maintained. The invention further relates to an AD method for producing such devices.

A material having favorable ferroelectricity is provided. An embodiment of the present invention is a metal oxide film including a first layer and a second layer. The first layer contains first oxygen and hafnium, and the second layer contains second oxygen and zirconium. The hafnium and the zirconium are bonded to each other with the first oxygen positioned therebetween, and the second oxygen is bonded to the zirconium.

The application belongs to the technical field of multiferroic materials, and relates to a design method of a multiferroic material based on a vanadium-doped two-dimensional ferroelectric body and the multiferroic material. Single-layer NbOI2 primitive cells are expanded in different directions to obtain supercells of different sizes. Vanadium is used as a doping element to dope the supercells of different sizes, and the doping configurations of each supercell under different doping concentrations are obtained. The doping configuration with the lowest total energy of the ferromagnetic state and the antiferromagnetic state under each doping concentration is used as the ground state configuration of the doping concentration. The band gap Eg and the spontaneous ferroelectric polarization intensity along the b-axis of the ground state configuration under different doping concentrations are calculated. A double-Y-axis curve graph is drawn with the doping concentration as the horizontal coordinate and the spontaneous ferroelectric polarization intensity and the band gap Eg as the vertical coordinate, and the multiferroic phase region and the magnetic semimetal phase region are divided. The doping concentration-physical property evolution phase diagram is obtained, so that the corresponding doping concentration value range of the ground state configuration with the multiferroic phase of ferroelectricity and antiferromagnetism is obtained to design the multiferroic material.

The invention provides a p-type sensing, storage and calculation integrated device based on single crystal Bi2O2Se, and belongs to the technical field of semiconductor device preparation. According to the device, a strong p-type Bi2O2Se thin film which is stable in air is selected as a base material of the device, and effective capture of photon-generated carriers is realized by utilizing a stable and controllable oxygen defect injection technology and intrinsic ferroelectricity of the material, so that stable non-volatile photoelectric response is realized in the single Bi2O2Se thin film, and then the stable sensing, storage and calculation integrated device is prepared. According to the invention, a new normal form for realizing a complex function by a single material is created: by utilizing a collaborative mechanism of defect engineering and ferroelectricity, the electrically erasable nonvolatile photoelectric response is realized in the single material, the complex and uncontrollable heterojunction problem in the traditional scheme is fundamentally avoided, the process is greatly simplified, and the cost is reduced. And the uniformity, the stability and the yield of the device are improved.

The application discloses an electronic and optoelectronic fiber drawing tower, and belongs to the technical field of electronic and optoelectronic fiber drawing, which comprises a tower body, a suspension system, a feeding system, a heating system, a diameter measuring system, a drawing system, a winding system and an attribute imparting system, the suspension system drives the spatial movement and rotation of a preform rod, the feeding system feeds an inner core wire to the preform rod, the heating system is used for heating the preform rod to a drawing state, the diameter measuring system is used for monitoring the diameter of an initial fiber, the drawing system is used for receiving and drawing the initial fiber, the winding system is used for winding and storing a finished fiber, and the attribute imparting system is used for imparting the inner core wire with magnetic, piezoelectric or ferroelectric properties. The drawing speed can be adjusted according to the monitored data, the electronic and optoelectronic fiber high-precision drawing can be satisfied, the current problem that electronic and optoelectronic fiber is difficult to realize high-efficiency and high-quality drawing is effectively solved, and the inner core wire can be imparted with magnetic, piezoelectric or ferroelectric properties.

The application provides a ferroelectric photovoltaic semiconductor material Hg 0.75 Pb 0.25 MnO3. The application also provides a method for preparing the ferroelectric photovoltaic semiconductor material Hg 0.75 Pb 0.25 MnO3, which comprises the following steps: (1) mixing PbO, HgO and MnO2 in a molar ratio of 1:3:4 to obtain a mixture; then grinding the mixture to obtain a powder; (2) sealing the powder obtained in step (1) and then performing a heating and pressurizing treatment, quenching and pressure releasing to a room temperature environment to obtain the ferroelectric photovoltaic semiconductor material Hg 0.75 Pb 0.25 MnO3. The application also provides the ferroelectric photovoltaic semiconductor material Hg 0.75 Pb 0.25 MnO3 according to the application or the ferroelectric photovoltaic semiconductor material Hg 0.75 Pb 0.25 MnO3 prepared by the method according to the application. The ferroelectric photovoltaic semiconductor material Hg 0.75 Pb 0.25 MnO3 has ferroelectricity at room temperature and good environmental stability, can reverse the photoelectric current direction with the direction of an external field, and has the characteristics of absorbing visible light.

A ferroelectric device including a metal oxide film having favorable ferroelectricity is provided. The ferroelectric device includes a first conductor, a metal oxide film over the first conductor, and a second conductor over the metal oxide film. The metal oxide film has ferroelectricity. The metal oxide film has a crystal structure. The crystal structure includes a first layer and a second layer. The first layer contains first oxygen and hafnium. The second layer contains second oxygen and zirconium. The hafnium and the zirconium are bonded to each other through the first oxygen. The second oxygen is bonded to the zirconium.

This ferromagnetic ferroelectric material has ferroelectricity and ferromagnetism, and contains a compound represented by any one of general formulae (1) to (3). Bi1-xA2+ xFe1-xM4+ xO3 ... (1) (In the formula, A is Mg, Ca, or Sr, and M is a 4d element or a 5d element that can form a tetravalent ion. x satisfies 0.02 ≤ x ≤ 0.15.) Bi1-xA+ xFe1-xM5+ xO3 ... (2) (In the formula, A is Na or K, and M is a 4d element or a 5d element that can form a pentavalent ion. x satisfies 0.02 ≤ x ≤ 0.15.) Bi1-2xA2+ 2xFe1-xM5+ xO3 ... (3) (In the formula, A is Mg, Ca, or Sr, and M is a 4d element or a 5d element that can form a pentavalent ion. x satisfies 0.02 ≤ x ≤ 0.15.)

The invention discloses a two-dimensional layered material with sliding ferroelectricity and a polarization intensity regulation and control method thereof, and belongs to the field of two-dimensional semiconductor materials. The material comprises two layers of single-layer materials with P6m < 2 > point group symmetry, and the two layers of single-layer materials are combined in a BA or AB sliding stacking configuration; the sliding stack generates ferroelectric polarization perpendicular to the plane, and a built-in electric field caused by charge transfer exists between the two layers of single-layer materials. The polarization intensity of the sliding ferroelectric phase can be obviously enhanced by regulating and controlling the interlayer spacing; ferroelectric flipping energy barrier calculation shows that the switching potential barrier between an AB phase and a BA phase is only 11.5 meV, and the material has a good reversible flipping characteristic. According to the method, a complete design model from a non-polar single layer to a sliding ferroelectric double layer is established through calculation according to a first principle, a physical mechanism taking the interlayer spacing as a key regulation and control parameter is disclosed, and a new theoretical scheme is provided for design of a high-performance and adjustable two-dimensional ferroelectric device.

The utility model discloses a high-performance storage device structure using AlScN ferroelectric material, comprising a substrate layer, an insulating layer, a ferroelectric layer, a polarization buffer layer and a grid layer which are arranged in sequence from bottom to top, the ferroelectric layer adopts an AlScN film, the thickness of the ferroelectric layer is 20nm, and the polarization buffer layer adopts AlN, and the thickness of the polarization buffer layer is 10nm. The utility model provides a high-performance storage device structure using an AlScN ferroelectric material, AlScN has a wurtzite crystal structure, is stable in ferroelectricity, can keep a specific electric state after an external electric field is removed, can keep stable in an environment as high as 1100 DEG C, is an ideal material for realizing non-volatile storage, and can be used as a high-performance storage device. AlScN has the lowest dielectric constant in the inorganic ferroelectric material, and is beneficial to increasing the sensing margin of the FeRAM; the AlScN thin film can grow at the temperature lower than 400 DEG C by using a magnetron sputtering technology, is compatible with a CMOS (Complementary Metal Oxide Semiconductor) manufacturing process, does not contain volatile elements, and reduces the pollution risk in the COMS (Complementary Metal Oxide Semiconductor) process.

The invention discloses a preparation method of a multi-element co-doped bismuth ferrite film system material, the film material is Bi < 1-x > (La < 0.2 > Nd < 0.2 > Sm < 0.2 > Gd < 0.2 > Lu < 0.2 >) < x > FeO < 3 >, and x is equal to 0.05, 0.1, 0.14 and 0.2. According to the preparation method, a multi-element co-doped ceramic target material is prepared by adopting a sol-gel method, and then the multi-element co-doped bismuth ferrite film is epitaxially grown on a LaAlO3 substrate by adopting a pulse laser deposition technology. According to the preparation method, uniform doping of five rare earth elements (La, Nd, Sm, Gd and Lu) in BFO crystal lattices is achieved, the prepared ceramic target material is high in density, and an epitaxial film is high in purity and good in crystallinity. The phase structure, ferroelectricity and conductivity of the film are remarkably regulated and optimized through the multi-element co-doping effect, compared with a pure-phase bismuth ferrite film, the coercive field of the film is remarkably reduced, the conductivity is improved by several orders of magnitude, and meanwhile the film has a regular nano island structure and an excellent ferroelectric domain overturning characteristic. The thin film prepared by the method is suitable for next-generation nonvolatile memories, sensors and multifunctional electronic devices.

The application provides a method for inducing ferroelectric properties of a hafnium oxide thin film, and belongs to the technical field of microelectronic materials and devices. The capacitor comprises, from bottom to top, a substrate, a bottom electrode, a ferroelectric layer and a top electrode; the hafnium oxide thin film is doped by using an ion implantation process, and by adjusting and controlling implantation energy and implantation dose, the doped elements form a gradient distribution in the thickness direction of the thin film. The application realizes gradient doping of elements in the hafnium oxide thin film by ion implantation, and constructs a composition gradient, a band gap gradient and a stress gradient in the thickness direction of the thin film, thereby realizing multi-dimensional collaborative optimization of ferroelectric properties. Compared with the prior art, the method is flexible and controllable, is compatible with CMOS processes, can inhibit leakage current and improve fatigue resistance while maintaining high ferroelectric properties, and is expected to be applied to the field of high-density ferroelectric memories.

The invention relates to a cobalt-based ferroelectric single-molecule magnet molecular crystal and a preparation method and application thereof, and belongs to the technical field of molecule-based magnetic materials. The chemical formula of the cobalt-based ferroelectric single-molecular magnet molecular crystal is [(CH3) 3S] 4 [Co (NCBH3) 6]. According to the invention, through the rational design of the molecular structure of an A4 [M (NCX) 6] type compound, the ordered-disordered phase change of organic cations is regulated and controlled to induce the symmetry breaking of the crystal so as to generate ferroelectricity; meanwhile, the transition metal center is endowed with strong magnetic anisotropy through ligand field engineering, so that the single-molecule magnet characteristic is realized, and the cobalt-based molecular crystal with the single-phase coexisting ferroelectricity and the single-molecule magnet characteristic is finally obtained; the problem that an existing A4 [M (NCX) 6] type compound cannot synergistically integrate ferroelectricity and the characteristics of a single-molecule magnet is solved.

The invention relates to the technical field of photoelectricity, in particular to a bimodal polarization fusion visual sensor, a preparation method thereof and a model construction method. According to the invention, the ferroelectric layer in the sensor can realize static gray imaging by using the bulk photovoltaic effect and ferroelectricity; meanwhile, the Van der Waals heterojunction formed by the ferroelectric layer and the anisotropic photosensitive layer simulates the plasticity behavior of biological synapse through charge recombination-capture dynamics under the irradiation of polarized light, and can asynchronously output a polarization dynamic image with high time resolution and low delay in an event-driven mode. According to the visual sensor, static imaging and polarization dynamic perception are fused in a hardware level in a single device, the visual perception robustness and information richness under a complex light field (such as glare and haze) are remarkably improved, and a high-energy-efficiency and high-performance bionic visual solution is provided for application of automatic driving, machine vision and the like.

The invention relates to a preparation method of an organic-inorganic hybrid perovskite type ferroelectric material and application of the organic-inorganic hybrid perovskite type ferroelectric material in catalytic hydrogen production, and belongs to the field of energy catalysis. The chemical formula of the material is (C6H12F2N) 2PbI4, and a layered perovskite structure with stable ferroelectric polarization orientation is obtained by controlling the selection and proportion process of a precursor. The material has ferroelectricity and can generate an enhanced built-in electric field under an illumination condition, so that separation and migration of photon-generated carriers are effectively promoted, and excellent photocatalytic hydrogen production performance is realized. On the basis, the synergistic effect of an external ultrasonic field and the ferroelectric polarization effect is further utilized, the interface charge separation efficiency and the surface reaction kinetics are remarkably improved, and the catalytic hydrogen production rate is further increased. The material and the method thereof have the advantages of being mild in preparation condition, high in structure adjustability, high in catalytic efficiency and the like, and an effective way is provided for development of a novel ferroelectric photocatalytic hydrogen production system.

The application relates to the technical field of ferroelectric two-dimensional materials, in particular to a two-dimensional magnetic material layer regulation method in a two-dimensional material device and a two-dimensional magnetic material device. The regulation method provided by the application comprises the following steps: providing a two-dimensional magnetic material device, which comprises a heterojunction structure formed by a target two-dimensional magnetic material layer and a regulation medium layer arranged on a substrate; applying a regulation voltage to the regulation medium layer to regulate the physical properties of the target two-dimensional magnetic material layer; the material of the regulation medium layer is a two-dimensional ferroion material which has ferroelectricity and ion conductivity; when the regulation voltage is located in a first amplitude interval, the physical properties of the target two-dimensional magnetic material layer change with the ferroelectric polarization flip of the regulation medium layer under the effect of a polarization field; when the regulation voltage is located in a second amplitude interval, the physical properties of the target two-dimensional magnetic material layer change with the ion migration in the regulation medium layer under the effect of ion intercalation or interface effect; the upper limit of the first amplitude interval is smaller than the lower limit of the second amplitude interval.

A ferroelectric device including a metal oxide film having favorable ferroelectricity is provided. The ferroelectric device includes a first conductor, a metal oxide film over the first conductor, and a second conductor over the metal oxide film. The metal oxide film has ferroelectricity. The metal oxide film has a crystal structure. The crystal structure includes a first layer and a second layer. The first layer contains first oxygen and hafnium. The second layer contains second oxygen and zirconium. The hafnium and the zirconium are bonded to each other through the first oxygen. The second oxygen is bonded to the zirconium.

The disclosed and claimed subject matter relates to a ferroelectric device having a bottom electrode, a film comprising crystalline ferroelectric materials that include a mixture of hafnium oxide and zirconium oxide having a substantial (i.e., approximately 40% or more) or majority portion of the material in a ferroelectric phase as deposited, a top electrode, and methods for preparing and depositing these materials. The bottom electrode is thin and has low roughness. The ferroelectric device is back-end-of-line (BEOL) compatible as all process steps take place at a temperature of 400 degrees Celsius or less.

The invention relates to the technical field of energy storage ceramics, in particular to a high-energy-storage and high-efficiency dielectric ceramic and a preparation method thereof. According to the specific technical scheme, the chemical general formula of the high-energy-storage and high-efficiency dielectric ceramic is (1-x) Bi < 0.2 > Na < 0.2 > K < 0.2 > La < 0.2 > Sr < 0.2 > TiO < 3-x > PbTiO < 3 >, and x is the content of introduced PbTiO < 3 > and ranges from 0.1 to 0.4. The polarization intensity of the high-entropy energy storage ceramic is regulated and controlled by regulating and controlling the content of the strong ferroelectric component.