Electric field write-in and resistance readout solid-state storage component, storer and read-write method of storer

A component and resistance state technology, applied in the field of information storage, can solve the problems of high cost of SSD, limited storage performance, high power consumption of writing, etc., achieve fast writing speed, increase information storage capacity, and improve storage density.

Active Publication Date: 2013-04-24
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the disadvantages of high cost, high write power consumption, and slow write speed, SSDs still use hard disks for data storage in large-capacity storage.
[0004] The above storage technologies either use a strong magnetic field generated by current to write information (typical representative: hard di

Method used

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  • Electric field write-in and resistance readout solid-state storage component, storer and read-write method of storer
  • Electric field write-in and resistance readout solid-state storage component, storer and read-write method of storer
  • Electric field write-in and resistance readout solid-state storage component, storer and read-write method of storer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0081] Embodiment 1 is a two-state solid-state storage device, see the attached Image 6 , in this embodiment, lead magnesium niobate-lead titanate (0.7Pb(Mg 2 / 3 Nb 1 / 3 )O 3 -0.3PbTiO 3 , referred to as: PMN-0.3PT, size: 5mm × 5.5mm × 0.55mm) grown on a solid solution single crystal substrate with a thickness of 80nm manganese oxide film La 2 / 3 Sr 1 / 3 MnO 3 (abbreviation: LSMO), PMN-0.3PT is used as the ferroelectric piezoelectric layer 4, LSMO is used as the resistance layer 2; Au is used as the bottom electrode layer 3 and the top electrode layer 12, and the writing electric field (V) is polarized through the electrode interconnection The PMN-0.3PT substrate induces the in-situ residual strain of the ferroelectric piezoelectric layer 4; correspondingly, the residual resistance state of the LSMO in the direction is read by the information readout device.

[0082] Figure 7 It is a chart of regulating the strain state of the piezoelectric layer by using an electric fie...

Embodiment 2

[0086] Further, based on the dependence of the strain of ferroelectric piezoelectric materials on the applied electric field history, we implemented a three-state solid-state memory using the LSMO / PMN-0.3PT heterojunction proposed in Example 1. In this example, we used the sample of Example 1.

[0087] attached Figure 10 Shown is the variation of the overall strain in the plane with the writing electric field. The strain is scanned from the positive (black and white circular lines) and negative (square lines) writing electric fields respectively, and after two different electric field scanning methods, three residual resistance states "0", "1" and "2" are generated. Specifically, similar to Embodiment 1, first carry out the forward scanning of the write electric field, we can obtain "0" and "1" states; then, reduce the write electric field (reach -E s ) to saturate and polarize the ferroelectric piezoelectric layer, scan negatively, increase the writing electric field and p...

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Abstract

The invention provides an electric field write-in and resistance readout solid-state storer component, a storer and a read-write method of the storer. The invention relates to a novel nonvolatile solid-state storage component, a storer, and a corresponding write-in and readout method. The solid-state storage component comprises a bottom electrode layer, a ferroelectricity piezoelectric layer formed on the bottom electrode layer, a resistive layer which is close to the ferroelectricity piezoelectric layer and placed on the ferroelectricity piezoelectric layer, and a top electrode layer which is placed on the resistive layer, wherein the ferroelectricity piezoelectric layer is used as an information storage layer and has two or more straining states under the effect of the electric field, and the resistive layer has two or more nonvolatile resistance states, so that the resistive layer can be used as the information readout layer. According to the solid-state storage component, the information is written in through the electric field and can be read out in a non-destructive manner; and the solid-stage storage component has the advantages of being low in power consumption, nonvolatile, fast in storage speed, and high in storage density.

Description

technical field [0001] The invention belongs to the technical field of information storage, and in particular relates to nonvolatile solid-state storage components and memories, in particular to nonvolatile solid-state storage components, storage components, and storage and information writing and reading of nonvolatile electric field writing and resistance reading method. Background technique [0002] Information storage technology is an important link in the development of modern electronics industry. At the same time, realizing high density, low power consumption, non-volatile and high-speed storage is the goal that people dream of. To this end, people have developed a variety of storage devices, mainly including: optical storage media that use light to read and write, such as CDs and DVDs; magnetic media storage devices that use magnetic fields to read and write, such as hard disks; Storage devices, such as magnetoresistive random access memory devices (MRAM); electric...

Claims

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Application Information

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IPC IPC(8): G11C16/02G11C11/22H01L45/00
Inventor 高琛杨远俊
Owner UNIV OF SCI & TECH OF CHINA
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