35 results about "Lead titanate" patented technology

The invention relates to the technical field of piezoelectric ceramics, in particular to a bismuth ferrite-lead titanate-zinc bismuth titanate ternary system piezoelectric ceramic material as well as preparation and application thereof. The chemical general formula of the bismuth ferrite-lead titanate-zinc bismuth titanate ternary system piezoelectric ceramic material disclosed by the invention is (1-x-y) BiFeO3-x (PbMez) TiO3-yBi (Zn0. 5Ti0. 5) O3, wherein Me is an alkaline earth metal element, x is equal to 0.4-0.8, y is equal to 0.05-0.3, z is equal to 0.05-0.5, and 1-x-y is greater than 0. The piezoelectric ceramic material has large anisotropy (d33 / d31 is between 5 and 60) and relatively high voltage (d33 is greater than 100pC / N), has a wide application prospect in the technical field of high-frequency image sonar transducers, and solves the problems of low piezoelectric coefficient and piezoelectric anisotropy of the existing bismuth ferrite-lead titanate-zinc bismuth titanate ternary system piezoelectric ceramic material.

This application relates to the field of electrochemical technology, specifically to polyester composite films and their preparation methods, composite current collectors and their preparation methods, electrodes and their applications. The polyester composite film of this application comprises: a polyester substrate layer and a first surface layer and a second surface layer respectively disposed on opposite sides of the polyester substrate layer; the polyester substrate layer comprises, by weight, 90 to 99 parts of polyester material and 1 to 10 parts of photo-straining material; the first and second surface layers comprise polyethylene terephthalate polymers; the transmittance of the first surface layer, the second surface layer, and the polyester material is independently 92% to 99%; the photo-straining material comprises one or more of barium titanate ceramics, lead zirconate titanate ceramics, PI / CNTs photosensitive composite materials, PEEK / anthraquinone photosensitive composite materials, MIL-101 chromium metal-organic frameworks, and UiO-66-NH2 / ZnO composite materials. The polyester composite film can easily break under high-destructive external forces such as battery breakdown and battery collision, effectively suppressing thermal runaway.

This invention discloses a phase-field method for multi-topological domain cyclic transformation in lead titanate (PTO) ferroelectric thin films. A computational model of the PTO ferroelectric thin film is established, defining polarization, potential, displacement, and oxygen vacancy concentration as field variables. Based on Ginzburg-Landau theory, a total free energy expression for the PTO ferroelectric thin film is established, incorporating oxygen vacancy transport processes and the coupling between oxygen vacancies and the electrostatic field. Combining time-correlated Ginzburg-Landau kinetic equations, mechanical equilibrium equations, electrostatic equilibrium equations, and Nernst-Planck equations, a phase-field model of the PTO ferroelectric thin film coupled with multiple physics fields is established. A stable initial skyrmion domain structure is constructed, and a preset uniform electric field sequence is applied to simulate the cyclic transformation process between skyrmions and flux-closed domains and / or stripe domains. This method can analyze the evolution path, transformation threshold, oxygen vacancy distribution, and cyclic stability of topological domains in PTO ferroelectric thin films under the synergistic effect of an applied electric field and oxygen vacancies, providing a theoretical basis for the design of ferroelectric topological domain multi-state storage devices.

The invention discloses a heat treatment method of high-polarization-intensity bismuth ferrite-lead titanate-barium zirconate titanate based ferroelectric ceramic, which comprises the following steps: arranging an electrode on the surface of a bismuth ferrite-lead titanate-barium zirconate titanate based ferroelectric ceramic sintered body, and then putting the sintered body into a rapid annealing furnace; the preparation method comprises the following steps: heating to 550-650 DEG C from room temperature at a heating rate of 5-80 DEG C / s, carrying out heat preservation for 45-75 seconds, carrying out first rapid annealing, and cooling to room temperature at a cooling rate of 250-350 DEG C / s, thereby obtaining the bismuth ferrite-lead titanate-barium zirconate titanate based ferroelectric ceramic. The heat treatment method provided by the invention can rearrange defects in the ceramic, increase domain conversion switches, improve the performance of the ceramic, and improve the performance of the ceramic. Furthermore, the ferroelectric piezoelectric property of the polarized BF-PT-BZT ceramic is greatly improved, and meanwhile, the polarized BF-PT-BZT ceramic has high Curie temperature.

The invention discloses an acousto-optic modulator based on heterogeneous integration of PZT and chalcogenide glass, and belongs to the technical field of integrated photoelectronics. The modulator sequentially comprises a silicon substrate, a silicon dioxide lower cladding layer and a lead zirconate titanate (PZT) piezoelectric film layer from bottom to top, a chalcogenide glass optical waveguide is heterogeneously integrated on the PZT layer, and the optical waveguide is patterned into a Mach-Zehnder interferometer (MZI) structure. An interdigital transducer (IDT) made of aluminum (Al) is arranged between two arms of the MZI, and air grooves which extend to a lower cladding layer or a substrate are etched in the outer sides of the two arms respectively. The advantage of high piezoelectric coefficient of PZT and the advantage of high photoelasticity of chalcogenide glass are combined through heterogeneous integration. Aluminum is used as an IDT electrode material, so that the mass loading effect of the electrode on the surface acoustic wave is effectively reduced; acoustic resonant cavities are constructed through air grooves in the outer sides of the two arms, sound wave energy is limited in an optical waveguide area, and the acousto-optic interaction is remarkably enhanced. The structure realizes optical signal modulation with low driving voltage, low loss and high efficiency, and is suitable for an integrated optical path system of intermediate infrared and communication wavebands.

The application relates to the technical field of piezoelectric materials, in particular to a lead zirconate titanate film and a low-temperature preparation method and application thereof, the preparation method comprising the following steps: Ti metal is taken as a radio frequency target material to perform first sputter deposition treatment on a substrate to form a Ti adhesion layer; a bottom electrode is formed on the Ti adhesion layer; Pb x Zr 0.52 Ti 0.48 O3 ceramic is taken as a radio frequency target material to perform second sputter deposition treatment on the bottom electrode, rapid heat treatment is performed, a PZT seed layer is formed; Pb x Zr 0.52 Ti 0.48 O3 ceramic is taken as a radio frequency target material to perform third sputter deposition treatment on the PZT seed layer, rapid heat treatment is performed, the step is repeated, and a lead zirconate titanate film is formed. In the process of sputter deposition of the PZT film material, the substrate tray is not additionally heated, the loss and volatilization of PbO are reduced, the film component stability can be effectively maintained; more crystal nuclei are provided by the PZT seed layer, the uniform crystallization of the PZT film is promoted, the crystallization quality and electrical properties of the PZT film are improved, the crystal boundary defects are reduced, and the adhesion and stability of the film and the substrate are enhanced.

The application provides a zirconium titanate lead film-based on-chip non-Hermitian extraordinary plane sensing structure and a preparation method thereof, and belongs to the technical field of integrated optical sensing. The sensing structure comprises a micro-ring resonant cavity formed by etching a zirconium titanate lead film wafer and composed of a ridge waveguide, a coupling waveguide located at the upper part of the micro-ring resonant cavity, and a Bragg grating at the right end of the coupling waveguide. An upper metal electrode and a lower metal electrode subjected to electrical polarization treatment are respectively deposited on the upper and lower sides of the right end of the coupling waveguide. The right end of the coupling waveguide, the upper metal electrode, the lower metal electrode and the Bragg grating form a non-Hermitian optical sensing reflection loop, and the coupling waveguide and the micro-ring resonant cavity couple light into the micro-ring resonant cavity through an evanescent wave coupling mode. The zirconium titanate lead film-based on-chip non-Hermitian extraordinary plane sensing structure provided by the application has high integration and stable non-Hermitian extraordinary plane regulation and control capability.

The application provides an energy collection structure based on a piezoelectric effect, and relates to the technical field of energy recycling, which comprises a circular supporting base, the top of the circular supporting base is fixed with a lower supporting plate, one side of the circular supporting base is provided with two first clamping mechanisms, and the top of the two first clamping mechanisms is provided with two second clamping mechanisms. Through cooperation of the beryllium bronze substrate, the lead zirconate titanate piezoelectric plate, the rectangular piezoelectric unit, the first circular magnet and the second circular magnet, the piezoelectric energy collection mechanism can realize multi-point collection, the situation that the whole system is paralyzed when a single energy collection module fails is effectively avoided, and the use efficiency is improved. The three beryllium bronze substrates are stably fixed through cooperation of the lower supporting plate, the upper supporting plate, the bolt, the first clamping mechanism and the second clamping mechanism. The vertical rod, the supporting rod, the connecting strip, the connecting rod and the screw are arranged, so that the spacing between the first clamping mechanism and the second clamping mechanism is conveniently adjusted.

The invention belongs to the technical field of piezoelectric ceramics, and particularly relates to a high-temperature magnesium bismuth titanate-lead zirconate titanate piezoelectric ceramic material and a preparation method thereof. Comprising the following chemical general formula: 0.65 Bi (Mg < 0.51 > Ti < 0.49 >) O < 3 >-0.35 Pb (Zr < x > Ti < 1-x >) O < 3-y > wt% La2O3, wherein x is equal to 0.01 to 0.7, and y is equal to 0.01 to 2. The piezoelectric ceramic material is prepared from the following raw materials: Pb3O4, TiO2, ZrO2, Nb2O5, Bi2O3, MgO and La2O3. The novel piezoelectric ceramic system has higher Curie temperature of 460-520 DEG C, and can work in a high-temperature environment of 260-400 DEG C. The novel piezoelectric ceramic system is suitable for being applied to a high-temperature sensor piezoelectric device.

The invention relates to the technical field of ferroelectric materials, in particular to a ferroelectric functional film and a preparation method thereof. The method comprises the following steps: depositing a target material on a substrate by adopting a pulse laser method, and carrying out post-treatment after deposition to obtain a ferroelectric functional film; the target material comprises one or two of a lead titanate target material and a strontium titanate target material. By changing technological parameters in the pulse laser deposition process, accurate control over the domain structure of the ferroelectric film is achieved, and the high-density and small-size domain structure is formed. The high-density domain structure obviously improves the physical properties such as piezoelectricity, dielectricity and the like of the ferroelectric film, and provides a material basis for high-performance electronic devices. The ferroelectric film prepared by the technology has potential application value in the field of high-density information memories, and is expected to solve the problem of density limitation in the existing storage technology.

Embodiments relate to a piezoelectric ceramic and methods of making the same that is suitable for use as a high-power piezoelectric ceramic, and in particular a piezoelectric ceramic that exhibits both good hard properties and good soft properties. Embodiments involve generating the piezoelectric ceramic via the combination of chemical modification / doping and / or a texturing method so that the piezoelectric material exhibits a large figure of merit, as well as other hard and soft properties. The chemical modification involves Cu and Mn doping a piezoelectric material composition having a relaxor-lead titanate based ferroelectric structure. The texturing involves templated grain growth (TGG) texturing using a BaTiO3 (BT) template.

A transmission line is disclosed which includes a first conductor, a second conductor, a composite disposed between the first conductor and the second conductor, the composite includes non-linear inclusions comprising one or more of non-linear dielectric and non-linear magnetic inclusions mixed in a matrix material, wherein the non-linear dielectric inclusions are selected from the group consisting of barium strontium titanate (BST), barium titanate, strontium titanate, barium zirconate titanate, lead zirconate titanate, lead titanate, lithium niobate, potassium niobate, lead scandium tantalate, strontium barium niobate, and combinations thereof, and the non-linear magnetic inclusions are selected from the group consisting of nickel zinc ferrite (NZF), manganese zinc ferrite, cobalt ferrite, manganese ferrite, zinc ferrite, nickel ferrite, and combinations thereof, wherein the non-linear inclusions by volume are about 25% NZF, about 10% BST / 15% NZF, and about 15% BST / 10% NZF, and wherein the first conductor, the second conductor, and the composite form a capacitor.

The application discloses a PZT-based piezoelectric ceramic material and a preparation method and application thereof. The PZT-based piezoelectric ceramic material comprises lead zirconate titanate and a doping element, wherein the doping element is neodymium and chromium, the doping amount of the neodymium is 2x mol% of the lead zirconate titanate, the doping amount of the chromium is 2ymol% of the lead zirconate titanate, 0.4<=x<=0.8, 0.15<=y<=0.25, the structural formula of the lead zirconate titanate is Pb(Zr z Ti 1‑z )O3, and the lead zirconate titanate is a solid solution formed by lead titanate and lead zirconate. Nd2O3 and Cr2O3 serve as dopants and play the roles of soft doping and hard doping respectively, which is beneficial to the common improvement of piezoelectric performance and temperature stability and can realize the comprehensive performance without degradation under a high-temperature environment. The application effectively solves the technical problem that the existing lead-based piezoelectric ceramic material is difficult to have piezoelectric performance and temperature stability under a high-temperature environment.

This invention discloses an impact-resistant insulating busbar and its preparation method, relating to the field of power electronic device manufacturing technology. The busbar of this invention comprises a substrate, an adhesive layer, and an insulating layer. The insulating layer is prepared by a specific process using furan-functionalized polyolefin elastomer, bismaleimide crosslinking agent, catechol-borate modified EVA, liquid crystal elastomer / lead zirconate titanate core-shell material, hexagonal boron nitride nanosheets, 3,4-ethylenedioxythiophene, polyethylene glycol-polystyrene-perfluorohexyl ethyl acrylate block copolymer, and other functional additives. The impact-resistant insulating busbar prepared by this invention maintains excellent electrical insulation performance while also possessing high impact resistance, excellent heat resistance, long-term environmental stability, and interface reliability, making it suitable for power equipment operating under harsh conditions.

The application discloses a high-temperature piezoelectric ceramic material, a preparation method and application, and belongs to the high-temperature piezoelectric ceramic material field. The application provides a high-temperature piezoelectric ceramic material, which is a samarium oxide doped lead ytterbium niobate-lead titanate piezoelectric ceramic material. The material is prepared by doping Sm2O3 in a lead ytterbium niobate-lead titanate binary system, and has high Curie temperature and further improved piezoelectric performance. Meanwhile, compared with existing ceramics, the piezoelectric performance of the ceramic at high temperature is more excellent. The application provides a preparation method of the high-temperature piezoelectric ceramic material, which can avoid the occurrence of a second phase in the ceramic, successfully realize stable sintering of the PYN-PT based material, and the ceramic prepared by the method has uniform particle size and high density. The preparation method has the advantages of simple process, low sintering temperature, low cost and suitability for large-scale industrial production, and has a wide application prospect in the field of high-temperature piezoelectric materials and devices.

A surface dielectric barrier discharge plasma ammonia synthesis apparatus is disclosed. In the apparatus, a container has an opening, an inlet for introducing nitrogen and hydrogen, and an outlet for discharging ammonia. A lead zirconate titanate dielectric plate is sealed at the opening to form a closed space with the container. A sheet metal electrode is disposed on the side of the lead zirconate titanate dielectric plate away from the container, and a hexagonal mesh stainless steel electrode is disposed on the side of the lead zirconate titanate dielectric plate closer to the container. A stainless steel L-shaped metal rod includes a first section placed inside the container as a connector for the hexagonal mesh stainless steel electrode and a second section extending perpendicularly out of the container from the first section. A discharge power supply is connected to the sheet metal electrode and the stainless steel L-shaped metal rod, causing nitrogen and hydrogen in the container to undergo a plasma reaction to generate ammonia.

This invention discloses a high Curie point, low voltage, and low resistance ceramic PTC element, its preparation method, and its application, relating to the field of ceramic PTC technology. The invention uses a solid solution system composed of barium titanate and lead titanate as the main components, controlling the molar ratio of barium to lead within the range of 0.63-0.70:0.30-0.37. This allows the Curie point of the material to be stably distributed in the high-temperature range of 240℃ to 280℃. By optimizing the doping system, a high temperature coefficient of resistance and a high step-up resistance ratio are maintained while achieving low room temperature resistance. The invention employs separate pre-firing methods, allowing barium titanate and lead titanate to be synthesized and semiconducted separately under their respective optimal temperature conditions, ensuring precise control of the Curie point. This avoids localized inhomogeneities caused by difficulties in solid solution during final mixing, achieving controllable and repeatable product performance, suitable for large-scale production. This invention successfully solves the problems of high Curie point, low voltage, and low resistance PTC element preparation difficulty and unstable performance in existing technologies, and has good prospects for industrial application.

This invention discloses a bismuth scandium aluminate-lead zirconate titanate piezoelectric ceramic and its preparation method, belonging to the technical field of piezoelectric ceramic materials. The general formula of the piezoelectric ceramic material of this invention is: xBiSc 1‑ z Al z O3-(1-x)PbZr y Ti 1‑y O3, where 0.2≤x≤0.7, 0.3≤y≤0.6; 0.45≤z≤0.55. The bismuth scandium aluminate-lead zirconate titanate piezoelectric ceramic prepared in this invention has a piezoelectric coefficient d. 33 It can reach 356 pC / N, Curie temperature up to 346℃, dielectric loss at 1 kHz frequency at room temperature is 1.60%, and the temperature stability of the system is improved, with the piezoelectric constant maintaining a change rate of less than 20% in the range of room temperature to 310℃.

The invention discloses a preparation method of a piezoelectric composite material, which comprises the following steps: selecting lead zirconium titanate nano powder, and preparing a polymer solution with the concentration of 15wt%; the preparation method comprises the following steps: dispersing lead zirconium titanate powder into a polyvinylidene fluoride solution; preparing the slurry into a thin film with the thickness of about 200 microns by adopting a tape casting process, so as to obtain a composite thin film blank; keeping the temperature at 150 DEG C for 1 hour in an inert atmosphere to promote polymer crystallization and uniform distribution of inorganic particles, so as to obtain a compact composite material film; depositing gold electrodes on two sides of the composite film by adopting a magnetron sputtering method; the composite film is placed in a silicone oil medium, an external electric field is applied for polarization, and a dynamic feedback polarization system is adopted in the polarization process; and after the polarization is completed, stabilizing for 24 hours at room temperature to obtain the final piezoelectric composite material. According to the invention, by introducing a dynamic feedback polarization system, abnormity can be identified in time, and priority ranking and targeted adjustment can be carried out, so that local over-polarization or under-polarization can be avoided.

The application relates to the target preparation technical field and provides a lead zirconate titanate target material, a preparation method thereof and a piezoelectric device. The preparation method comprises the following steps: preparing lead zirconate titanate powder; mixing, ball-milling and drying the lead zirconate titanate powder, glass powder, a dispersing agent and a solvent to obtain sintering precursor powder; performing pre-pressing treatment and hot-pressing treatment on the sintering precursor powder, then performing heat treatment in an oxygen-containing atmosphere, and finally machining to obtain the lead zirconate titanate target material. In the application, the PbO content is gradually increased from the bottom to the top of the crucible when the raw materials are filled, so as to compensate for the loss of PbO volatilization in the upper layer, thereby generating lead zirconate titanate powder with more uniform composition, then the lead zirconate titanate powder is sintered by low-temperature hot-pressing together with glass powder with a specific formula, the volatilized PbO is compensated, the accuracy of the chemical composition ratio of the target material is improved, the sintering temperature is reduced, the migration and aggregation of Pb elements in the sintering process are inhibited, the uniformity of the target material is improved, and the other components of the glass powder also improve the piezoelectric performance of the PZT target material.

The invention provides a ferroelectric material film composite sodium metal negative electrode and a preparation method and application thereof, and belongs to the technical field of sodium batteries. The ferroelectric material film composite sodium metal negative electrode comprises a sodium metal substrate and a ferroelectric material film layer, the ferroelectric material film layer tightly covers the surface of the sodium metal matrix in a physical coating mode, and a ferroelectric material in the ferroelectric material film layer is selected from at least one of barium titanate, lead zirconate titanate, potassium sodium niobate and hafnium zirconium oxide. According to the invention, the spontaneous polarization electric field characteristic of the ferroelectric material is combined, the ferroelectric material acts on the surface of the sodium metal to serve as a protective layer, and the migration rate of sodium ions is greatly increased and the polarization overpotential is greatly reduced due to the fact that electric dipoles in the film are orderly arranged to generate a built-in electric field in battery circulation. The ferroelectric material film has good mechanical strength, can protect sodium metal from being corroded by organic electrolyte, and effectively improves the cycle stability of the battery.

Disclosed is a method for improving anti-reduction performance of a PTC thermosensitive element, including coating an inorganic protective layer, organic protective layer, or organic and inorganic composite protective layer coated with a mixture of an inorganic substance and an organic substance for blocking harmful reducing gases from entering an interior of a ceramic body through surface defects or grain boundaries of the ceramic body onto the surface of a PTC thermosensitive element based on barium lead titanate. Advantages: by coating the inorganic protective layer, organic protective layer, or organic and inorganic composite protective layer coated with the mixture of the inorganic substance and the organic substance onto the surface of the PTC thermosensitive element based on barium lead titanate to form an isolation protective layer for blocking reducing harmful gases from entering the interior of the ceramic body through the surface defects or grain boundaries of the ceramic body.

The preparation method comprises the following steps: taking a lead source solution, an acidic zirconium source solution and a tetrabutyl titanate ethanol solution, dropwise adding the tetrabutyl titanate ethanol solution into the zirconium source solution under a stirring condition, and continuously and uniformly stirring to obtain a zirconium-titanium mixed solution; the zirconium source solution is acidic; dropwise adding the lead source solution into the zirconium-titanium mixed solution, adding a complexing agent, and stirring to obtain a uniform precursor solution; adding a mineralizer into the precursor solution, stirring until the mineralizer is completely dissolved, and then adjusting the pH value of a hydrothermal reaction system to be alkaline to obtain a hydrothermal reaction solution; putting the hydrothermal reaction liquid into a high-pressure reaction kettle for hydrothermal reaction, and naturally cooling to room temperature after the hydrothermal reaction is completed; washing and drying the obtained product to obtain a lead zirconate titanate template initial product; roasting and cooling the lead zirconate titanate template primary product to obtain a lead zirconate titanate template; the lead zirconate titanate template method is low in temperature and controllable in morphology, and the product is suitable for textured ceramic and ferroelectric epitaxial growth.

The invention provides a bismuth scandate lead titanate-based high-temperature piezoelectric ceramic, a driver and a preparation method, the chemical formula is xBi (Zn3 / 4W1 / 4) O3-(1-x-y) BiScO3-yPbTiO3, the value range of x is 0.04-0.20, and y is 0.4-0.67, the preparation method of the bismuth scandate lead titanate-based high-temperature piezoelectric ceramic comprises the following steps: taking PbO, Bi2O3, TiO2, Sc2O3, a zinc source and a tungsten source, and carrying out heat preservation at 650-700 DEG C for 2 hours by adopting a high-temperature solid phase method to synthesize xBi (Zn3 / 4W1 / 4) O3-(1-x-y) BiScO3-yPbTiO3 ceramic powder; the preparation method comprises the following steps: preparing slurry from xBi (Zn3 / 4W1 / 4) O3-(1-x-y) BiScO3-yPbTiO3 ceramic powder, and carrying out tape casting, drying, cutting, electrode receiving, drying, laminating, hot pressing, cutting, glue discharging, sintering and silver electrode preparation on the side surface to obtain the bismuth scandate and lead titanate-based high-temperature piezoelectric ceramic driver. Bi (Zn3 / 4W1 / 4) O3 with ultrahigh polarization intensity Ps is used for doping the BS-PT ceramic, so that the piezoelectric property of the ceramic is greatly improved, the material has large strain performance, the Curie temperature of the ceramic is still maintained at 415 DEG C or above, the coercive field of the BS-PT ceramic is slightly increased instead of being reduced, and good electric field stability is kept.

The preparation method of the low-loss PZT / PLZT waveguide and the application of the low-loss PZT / PLZT waveguide comprise the following steps: S1, preparing a substrate which is used as a substrate to which a PZT or PLZT layer is uniformly attached; s2, preparing a PZT or PLZT film; S3, photoetching a pattern: coating photoresist on the surface of the PZT or PLZT film, performing soft baking to remove a solvent in the photoresist, and leaving a photoetching pattern on the surface of the PZT or PLZT film through photoetching exposure and development; s4, dry etching: using inductively coupled plasma (ICP) equipment, introducing Ar and SF6 gas to carry out an etching process, and carrying out etching on the PZT / PLZT thin film to form a waveguide structure; and S5, photoresist removal and post-treatment. The invention provides a method for obtaining a low-loss lead zirconate titanate (PZT) / lanthanum-doped lead zirconate titanate (PLZT) waveguide through dry etching.

The invention provides a preparation method of a composite waveguide based on lead zirconate titanate and silicon nitride, and relates to the technical field of optics. The preparation method comprises the steps of performing graphical processing and etching on a silicon nitride film to obtain a silicon nitride waveguide layer with a preset morphology; a lead zirconate titanate precursor solution is deposited on the first outer cladding layer in a spin coating mode, so that a lead zirconate titanate film is formed on the first outer cladding layer; depositing a high-resistance material on the lead zirconate titanate thin film to form a resistance structure; depositing a metal layer above the resistor structure to form a metal electrode; depositing a second outer cladding layer on the metal electrode, and carrying out surface planarization treatment on the second outer cladding layer; and carrying out graphical etching on the second outer cladding after surface planarization processing, and windowing to the metal electrode to obtain the composite waveguide based on lead zirconate titanate and silicon nitride. The invention also provides a composite waveguide based on lead zirconate titanate and silicon nitride.

The application belongs to the field of functional crystal materials, and discloses a lead titanate-based single crystal grown based on a mobile heater method and a preparation method thereof. The method comprises the following steps: subjecting pre-synthesized single crystal raw material powder containing a lead-based fluxing agent to cold isostatic pressing at 180-200 MPa and sintering at 1150-1250 DEG C to obtain a densified polycrystalline precursor block; placing the precursor block and a seed crystal in a closed growth container; locally heating the contact position to form a liquid phase melting zone with a limited height, and the upper and lower sides have an axial temperature gradient of 5-10 DEG C / cm; and controlling the heating area to move at a speed of 0.5-1 mm / h to grow. Through the cooperation of precursor densification and a limited melting zone with a gentle temperature gradient, the liquid phase capillary penetration is blocked, and the buoyancy convection in the melting zone is suppressed, the tail block is orderly melted during entering the limited melting zone, the steady mass transfer is realized, and a high uniformity single crystal with small axial component fluctuation and converged piezoelectric performance is prepared.

The invention discloses a hybrid plasma electro-optical modulator based on a lead zirconate titanate film and a preparation method thereof, and belongs to the technical field of planar optical waveguide devices. The modulator consists of a Si substrate, a SiO2 oxide layer, a lead zirconate titanate thin film layer, a polymer optical waveguide layer, a first grounding electrode, a signal electrode and a second grounding electrode in sequence from bottom to top, wherein the polymer optical waveguide layer is prepared on the lead zirconate titanate thin film layer through spin coating, photoetching and wet etching. Silicon attached with a silicon dioxide buffer layer serves as a waveguide substrate, a lead zirconate titanate thin film layer serves as a waveguide core layer, and a polymer with the refractive index smaller than that of lead zirconate titanate serves as an optical waveguide layer. The selected polymers are various, the refractive index is small, and the refractive index difference between the selected polymers and a lead zirconate titanate film is large. The manufacturing technology is simple and compatible with the semiconductor technology, large-scale integration and production can be achieved, the mode optical switch can be applied to practice, and therefore the mode optical switch has important practical application value.

This application relates to the field of target material preparation technology, providing a lead zirconate titanate target material, its preparation method, and a piezoelectric device. The preparation method includes: preparing lead zirconate titanate powder; mixing, ball milling, and drying the lead zirconate titanate powder, glass powder, dispersant, and solvent to obtain a sintering precursor powder; subjecting the sintering precursor powder to pre-pressing and hot-pressing treatment, followed by heat treatment in an oxygen-containing atmosphere, and then machining to obtain the lead zirconate titanate target material. In this application, the PbO content is gradually increased from the bottom to the top of the crucible during raw material filling to compensate for the volatilization loss of upper-layer PbO, thereby generating a more uniform lead zirconate titanate powder. Then, it is sintered with glass powder containing a specific formulation at a low temperature using hot pressing. This not only compensates for the volatilization loss of PbO and improves the accuracy of the target material's chemical composition ratio, but also lowers the sintering temperature, inhibiting the migration and aggregation of Pb elements during sintering and improving the uniformity of the target material. Simultaneously, other components of the glass powder also enhance the piezoelectric properties of the PZT target material.

This invention belongs to the field of functional ceramic materials technology, specifically relating to a bismuth scandate-lead titanate-based high-temperature piezoelectric ceramic and its preparation method. This invention simultaneously introduces iron (Fe) at the B site of BS-PT. 3+ ) ions and magnesium-titanium (Mg 2+ -Ti 4+ ) complex ions, Mg 2+ With Ti 4+ By strictly maintaining an equimolar ratio of 1:1, a new material composed of Sc was constructed. 3+ Fe 3+ Mg 2+ Ti 4+ The high-entropy perovskite structure, in which quaternary ions co-occupy the B site, ensures that the average valence state of the B site is precisely +3, achieving charge self-consistency and fundamentally avoiding the generation of oxygen vacancies or cation vacancies, ultimately resulting in ceramic materials with excellent performance.