80 results about "Lead titanate" patented technology

The invention discloses a preparation method of high-polarization bismuth ferrite-lead titanate-barium zirconate titanate-based ferroelectric ceramic, which comprises the following steps: preparing oxide raw materials according to the chemical formula of the bismuth ferrite-barium titanate ceramic-based ferroelectric ceramic, mixing to obtain mixed powder, pre-sintering the mixed powder to obtain pre-sintered powder, granulating the pre-sintered powder to obtain granules, and sintering the granules to obtain the high-polarization bismuth ferrite-lead titanate-barium zirconate titanate-based ferroelectric ceramic. Performing compression molding on the granules to obtain a green body, performing degumming sintering on the green body to obtain sintered ceramic, and performing annealing treatment on the sintered ceramic to obtain the bismuth ferrite-lead titanate-barium zirconate titanate based ferroelectric ceramic. According to the invention, annealing treatment is carried out on sintered ceramic, after annealing treatment, defect dipoles generated by volatilization of Pb and Bi in the ceramic are rearranged under the action of a temperature field, relaxor ferroelectric-ferroelectric phase change occurs in a ceramic phase, a ferroelectric hysteresis loop reflects that the girdling of the loop is opened, and the rectangularity is increased; a bipolar strain curve is converted into a typical butterfly shape of ferroelectric from a bud shape, and the ferroelectricity of the ceramic is further greatly improved.

The invention relates to the technical field of piezoelectric materials, in particular to a lead zirconate titanate film and a low-temperature preparation method and application thereof.The preparation method comprises the steps that Ti metal serves as a radio frequency target material and is subjected to first sputtering deposition treatment on a substrate, and a Ti adhesion layer is formed; forming a bottom electrode on the Ti adhesion layer; taking PbxZr0. 52Ti0. 48O3 ceramic as a radio frequency target material, carrying out second sputtering deposition treatment on the bottom electrode, and carrying out rapid heat treatment to form a PZT seed layer; and carrying out third sputtering deposition treatment on the PZT seed layer by taking PbxZr0. 52Ti0. 48O3 ceramic as a radio frequency target material, carrying out rapid heat treatment, and repeating the step to form the lead zirconate titanate film. According to the method, the substrate tray is not additionally heated in the process of sputtering and depositing the PZT thin film material, so that the loss and volatilization of PbO are reduced, and the stability of thin film components can be effectively maintained; the PZT seed layer is utilized to provide more crystal nucleuses, so that the uniform crystallization of the PZT film is promoted, the crystallization quality and the electrical property of the PZT film are improved, the grain boundary defect is reduced, and the adhesive force and the stability of the film and the substrate are enhanced.

The invention relates to plasticity-enhanced lead lanthanum zirconium tin titanate-based antiferroelectric ceramic and a preparation method thereof. The chemical formula of the zirconium tin lead titanate lanthanum-based anti-ferroelectric ceramic is (Pb < 0.975-x > La < 0.02 > Sr < x >) (Zr < 0.5 > Sn < 0.37 > Ti < 0.13 >) < 0.9975 > O < 3 >, x is smaller than or equal to 0.10; and sintering by adopting a flash sintering technology to prepare the plasticity-enhanced lead lanthanum zirconate tin titanate-based antiferroelectric ceramic. Wherein the initial electric field intensity is set to be 100-300 V / cm, and the temperature rise rate of the flash sintering furnace body is 5-15 DEG C / min; when the reading of the current detector reaches the order of magnitude of [mu] A, the electric field intensity is increased to 200-500V / cm; after the current density value reaches 10-30 mA / mm < 2 >, the stable current density is kept for 90-200 s; preferably, the temperature rise rate of the flash burning furnace body is 8-12 DEG C / min.

The invention relates to a bismuth scandate-lead titanate based piezoelectric ceramic material and a preparation method and application thereof, the chemical general formula of the bismuth scandate-lead titanate based piezoelectric ceramic material is (1-y) Bi (Sc (1-x) Mex) O3-yPbTiO3, Me is a late transition metal element, x is 0.03-0.3, and y is 0.63-0.64. Compared with the prior art, the piezoelectric anisotropy and the piezoelectric property of the piezoelectric ceramic are improved by doping the rear transition group metal element Me on the basis of the BiScO3-PbTiO3 binary system piezoelectric ceramic material, the piezoelectric constant d33 is greater than 500pC / N, and the piezoelectric anisotropy d33 / d31 is greater than 3.5.

The invention provides a lead zirconate titanate composite film with a high electro-optical coefficient, a preparation method of the lead zirconate titanate composite film and an electro-optical modulator, the lead zirconate titanate composite film comprises an insulating substrate, a buffer layer and a ferroelectric main body layer which are sequentially stacked, and the buffer layer is a lanthanum-doped lead zirconate titanate film; the ferroelectric main body layer is a lead zirconate titanate thin film and has (001) / (100) orientation. The composite film has a relatively high electro-optical coefficient, relatively low driving voltage and relatively high thermal stability.

The invention discloses a sintering aid coated lead barium titanate-based thermal sensitive ceramic and a preparation method thereof, and relates to the technical field of material science, the raw materials of the core layer comprise barium carbonate, lead tetraoxide, calcium carbonate, strontium carbonate, zirconium oxide, tin oxide, titanium dioxide, manganese oxide and niobium pentoxide; the raw materials of the shell layer comprise silica sol, an aluminum compound, a calcium compound, a sodium compound, a potassium compound, a magnesium compound and boric acid; the preparation method comprises the following steps: mixing the raw materials of the core layer, calcining at 950-1050 DEG C, adding a deionized water solution of the raw materials of the shell layer, mixing, calcining at 1000-1100 DEG C, adding a polyvinyl alcohol water solution, granulating, forming, degumming and sintering to obtain the sintering aid coated lead barium titanate based thermal sensitive ceramic. According to the invention, the sintering aid is used for coating the lead barium titanate-based thermal sensitive ceramic, so that the densification of the ceramic is promoted while grains are refined, and the ceramic has high voltage resistance and excellent PTC (Positive Temperature Coefficient) effect.

The invention relates to the technical field of piezoelectric ceramics, in particular to a bismuth ferrite-lead titanate-zinc bismuth titanate ternary system piezoelectric ceramic material as well as preparation and application thereof. The chemical general formula of the bismuth ferrite-lead titanate-zinc bismuth titanate ternary system piezoelectric ceramic material disclosed by the invention is (1-x-y) BiFeO3-x (PbMez) TiO3-yBi (Zn0. 5Ti0. 5) O3, wherein Me is an alkaline earth metal element, x is equal to 0.4-0.8, y is equal to 0.05-0.3, z is equal to 0.05-0.5, and 1-x-y is greater than 0. The piezoelectric ceramic material has large anisotropy (d33 / d31 is between 5 and 60) and relatively high voltage (d33 is greater than 100pC / N), has a wide application prospect in the technical field of high-frequency image sonar transducers, and solves the problems of low piezoelectric coefficient and piezoelectric anisotropy of the existing bismuth ferrite-lead titanate-zinc bismuth titanate ternary system piezoelectric ceramic material.

The invention discloses a high-pressure-resistant lead barium titanate-based thermal sensitive ceramic and a preparation method thereof, and belongs to the technical field of material science, a core layer of the high-pressure-resistant lead barium titanate-based thermal sensitive ceramic comprises the following raw materials in parts by mole: 2-5 parts of lead tetraoxide, 25-39 parts of barium carbonate, 30-45 parts of titanium dioxide, 0.03-0.3 part of manganese oxide and 0.2-0.4 part of niobium oxide; the shell layer comprises the following raw materials in parts by mole: 1-15 parts of a barium compound, 5-20 parts of a titanium compound, 0-3 parts of a strontium compound, 0-5 parts of a calcium compound, 0.5-5 parts of zirconium oxychloride and 1-8 parts of a tin compound; the preparation method comprises the following steps: mixing the raw materials of the core layer, calcining at 1000-1100 DEG C, adding a deionized water solution of the raw materials of the shell layer, mixing, spray-drying, calcining at 950-1050 DEG C, adding a polyvinyl alcohol water solution, granulating, forming, degumming and sintering. The ceramic prepared by the preparation method disclosed by the invention has high voltage-resistant characteristic and excellent PTC (Positive Temperature Coefficient) effect.

A method for fabricating an ambient energy converter is described, comprising a plate-shaped support substrate consisting of a first conductor material as the first electrode and a layered structure arranged on this substrate. This structure consists of a layer of ferroelectric material and a layer of a second conductor material, different from the first conductor material, as the second electrode. The two conductor materials have different concentrations of free electrons. The ferroelectric material comprises one or more ferroelectric semiconductors. Ferroelectric semiconductors used as the ferroelectric material are selected from the list of sodium nitrite, semiconductor ceramics based on barium titanate, lithium niobate, potassium niobate, lead titanate, etc.The process comprises the following steps: - providing a plate made of the conductor material intended for the first electrode as a substrate, - subjecting the substrate to at least one surface treatment, - applying the layer of ferroelectric material (BTO layer) to a side of the substrate intended as the front, - masking at least the edges of the BTO layer on the front of the substrate, leaving at least one area within the edges of the BTO layer free, and - applying the conductor material intended for the second electrode to the area left free from masking.

This application relates to the field of electrochemical technology, specifically to polyester composite films and their preparation methods, composite current collectors and their preparation methods, electrodes and their applications. The polyester composite film of this application comprises: a polyester substrate layer and a first surface layer and a second surface layer respectively disposed on opposite sides of the polyester substrate layer; the polyester substrate layer comprises, by weight, 90 to 99 parts of polyester material and 1 to 10 parts of photo-straining material; the first and second surface layers comprise polyethylene terephthalate polymers; the transmittance of the first surface layer, the second surface layer, and the polyester material is independently 92% to 99%; the photo-straining material comprises one or more of barium titanate ceramics, lead zirconate titanate ceramics, PI / CNTs photosensitive composite materials, PEEK / anthraquinone photosensitive composite materials, MIL-101 chromium metal-organic frameworks, and UiO-66-NH2 / ZnO composite materials. The polyester composite film can easily break under high-destructive external forces such as battery breakdown and battery collision, effectively suppressing thermal runaway.

This invention discloses a phase-field method for multi-topological domain cyclic transformation in lead titanate (PTO) ferroelectric thin films. A computational model of the PTO ferroelectric thin film is established, defining polarization, potential, displacement, and oxygen vacancy concentration as field variables. Based on Ginzburg-Landau theory, a total free energy expression for the PTO ferroelectric thin film is established, incorporating oxygen vacancy transport processes and the coupling between oxygen vacancies and the electrostatic field. Combining time-correlated Ginzburg-Landau kinetic equations, mechanical equilibrium equations, electrostatic equilibrium equations, and Nernst-Planck equations, a phase-field model of the PTO ferroelectric thin film coupled with multiple physics fields is established. A stable initial skyrmion domain structure is constructed, and a preset uniform electric field sequence is applied to simulate the cyclic transformation process between skyrmions and flux-closed domains and / or stripe domains. This method can analyze the evolution path, transformation threshold, oxygen vacancy distribution, and cyclic stability of topological domains in PTO ferroelectric thin films under the synergistic effect of an applied electric field and oxygen vacancies, providing a theoretical basis for the design of ferroelectric topological domain multi-state storage devices.

The invention discloses a heat treatment method of high-polarization-intensity bismuth ferrite-lead titanate-barium zirconate titanate based ferroelectric ceramic, which comprises the following steps: arranging an electrode on the surface of a bismuth ferrite-lead titanate-barium zirconate titanate based ferroelectric ceramic sintered body, and then putting the sintered body into a rapid annealing furnace; the preparation method comprises the following steps: heating to 550-650 DEG C from room temperature at a heating rate of 5-80 DEG C / s, carrying out heat preservation for 45-75 seconds, carrying out first rapid annealing, and cooling to room temperature at a cooling rate of 250-350 DEG C / s, thereby obtaining the bismuth ferrite-lead titanate-barium zirconate titanate based ferroelectric ceramic. The heat treatment method provided by the invention can rearrange defects in the ceramic, increase domain conversion switches, improve the performance of the ceramic, and improve the performance of the ceramic. Furthermore, the ferroelectric piezoelectric property of the polarized BF-PT-BZT ceramic is greatly improved, and meanwhile, the polarized BF-PT-BZT ceramic has high Curie temperature.

A positive temperature coefficient ceramic thermistor element includes a sintered thermosensitive ceramic piece that uses lead barium titanate as a base, as well as metal ohmic electrodes which are positioned on two side surfaces of the thermosensitive ceramic piece. The thermistor element has a microporous channel barrier layer, and includes a glass sealing layer which wraps the outer surface of the thermosensitive ceramic piece, or an organic matter sealant which fills and blocks micro-pores in the surfaces of the metal ohmic electrodes combined on the two side surfaces of the thermosensitive ceramic piece and, at the same time, blocks gaps in the surfaces of areas, that do not have the metal ohmic electrodes, of a peripheral edge of the thermosensitive ceramic piece.

The invention belongs to the field of pyroelectric sensing, and relates to a multichannel lead zirconate titanate pyroelectric detector and a preparation method thereof. The specific structure is as follows: a substrate and a detection layer are arranged from bottom to top; the substrate is provided with a cavity penetrating up and down; the detection layer sequentially comprises a lower electrode, a lead zirconate titanate layer, an upper electrode, a dielectric layer and a metasurface layer from bottom to top; the lead zirconate titanate layer is located in the middle area of the lower electrode, and the peripheral edge of the lower electrode is not covered with the lead zirconate titanate layer; the lead zirconate titanate layer completely covers the upper electrode; the middle area of the upper electrode covers the dielectric layer, and the peripheral edge of the upper electrode does not cover the dielectric layer; the metasurface layer covers the dielectric layer; the orthographic projection of the metasurface layer on the substrate is located in the cavity. Different metasurface layer patterns correspond to each cavity, electromagnetic waves with different frequencies are responded, and therefore the multi-channel detector responding to different electromagnetic wave frequency domains is formed.

The invention relates to bismuth scandate-lead zirconate titanate piezoelectric ceramic, a preparation method thereof and a piezoelectric device. The chemical general formula of the bismuth scandate-lead zirconate titanate piezoelectric ceramic is t (0.36 BS-0. 64PT)-(1-t) (0.52 PZ-0. 48PT), t is larger than or equal to 0.05 and smaller than or equal to 0.3, and t is a molar ratio. The novel ternary system t (0.36 BS-0. 64 PT)-(1-t) (0.52 PZ-0. 48 PT) piezoelectric ceramic is obtained by adding BS as a third component into a PZT system, the series of ceramics are simple to prepare and stable in formula, the Curie temperature is higher than 480 DEG C, and the problem of poor temperature stability of commercial piezoelectric ceramics is well solved. In addition, the invention also relates to a preparation method of the bismuth scandate-lead zirconate titanate piezoelectric ceramic, and a piezoelectric device comprising the bismuth scandate-lead zirconate titanate piezoelectric ceramic.

Disclosed herein are assemblies and processes for managing non-volatile and / or low volatile by-product materials generated within a plasma processing region of a plasma processing chamber during various plasma-based processes performed on a substrate. These assemblies include a top window structure, a liner structure, an edge ring structure, a focus ring structure, a ground ring structure, a substrate access port shield, an insertion liner for a port opening in a chamber wall, and a discharge baffle assembly for positioning within a discharge channel connected to the chamber. One or more exposed treated surfaces of the various components are subjected to a surface roughening / texturing treatment to impart a surface roughness and / or engineered topography to the exposed treated surfaces for promoting adhesion and retention of plasma treatment byproduct materials. Various components having roughened / textured surfaces exposed to treatment are configured for lead zirconate titanate (PZT) film etch and / or platinum (Pt) film etch treatments.

The invention belongs to the technical field of high-performance composite materials, and discloses a lead zirconate titanate-barite composite board and a preparation method and application thereof. According to the invention, lead zirconate titanate and common barium sulfate of different models are reasonably proportioned, and nano silicon dioxide, nano aluminum oxide and a specific coupling agent are combined, so that the material is endowed with excellent high dielectric constant, radiation resistance and mechanical strength. The composite board provided by the invention has a dielectric constant of more than or equal to 3000 and a radiation shielding coefficient of more than or equal to 98%, has compressive strength of more than or equal to 90 MPa, and is suitable for structural protection and electromagnetic shielding application in scenes such as nuclear power stations, ground laboratories, high-energy physics laboratories and the like.

The invention discloses an acousto-optic modulator based on heterogeneous integration of PZT and chalcogenide glass, and belongs to the technical field of integrated photoelectronics. The modulator sequentially comprises a silicon substrate, a silicon dioxide lower cladding layer and a lead zirconate titanate (PZT) piezoelectric film layer from bottom to top, a chalcogenide glass optical waveguide is heterogeneously integrated on the PZT layer, and the optical waveguide is patterned into a Mach-Zehnder interferometer (MZI) structure. An interdigital transducer (IDT) made of aluminum (Al) is arranged between two arms of the MZI, and air grooves which extend to a lower cladding layer or a substrate are etched in the outer sides of the two arms respectively. The advantage of high piezoelectric coefficient of PZT and the advantage of high photoelasticity of chalcogenide glass are combined through heterogeneous integration. Aluminum is used as an IDT electrode material, so that the mass loading effect of the electrode on the surface acoustic wave is effectively reduced; acoustic resonant cavities are constructed through air grooves in the outer sides of the two arms, sound wave energy is limited in an optical waveguide area, and the acousto-optic interaction is remarkably enhanced. The structure realizes optical signal modulation with low driving voltage, low loss and high efficiency, and is suitable for an integrated optical path system of intermediate infrared and communication wavebands.

The invention relates to the technical field of electrochemistry, in particular to a polyester composite film and a preparation method thereof, a composite current collector and a preparation method thereof, and an electrode and application thereof. The polyester composite film comprises a polyester substrate layer, a first surface layer and a second surface layer, wherein the first surface layer and the second surface layer are respectively arranged on two opposite sides of the polyester substrate layer; the polyester substrate layer comprises the following components in parts by weight: 90-99 parts of a polyester material and 1-10 parts of a photoinduced strain material; the components of the first surface layer and the second surface layer comprise a polyterephthalate polymer; the light transmittance of the first surface layer, the light transmittance of the second surface layer and the light transmittance of the polyester material are 92%-99% respectively and independently; the photoinduced strain material comprises one or more of barium titanate ceramic, lead zirconate titanate ceramic, a PI / CNTs photosensitive composite material, a PEEK / anthraquinone photosensitive composite material, an MIL-101 chromium metal organic framework and a UiO-66-NH2 / ZnO composite material. The polyester composite film can be easily broken under high-damage external force such as battery breakdown and battery collision, so that the thermal runaway phenomenon is effectively inhibited.

The invention belongs to the technical field of special ceramic preparation, and particularly relates to lead zirconate titanate porous piezoelectric ceramic as well as a preparation method and application thereof. The preparation method comprises the following steps: mixing an alkenyl-containing organic monomer, a cross-linking agent, an alcohol organic solvent, lead zirconate titanate powder and a dispersing agent, grinding, removing bubbles from the obtained premix, mixing with an initiator and an amine catalyst, and carrying out a polymerization reaction to obtain a gel blank; and sequentially drying and sintering the gel blank to obtain the lead zirconate titanate porous piezoelectric ceramic. The porosity of the lead zirconate titanate porous piezoelectric ceramic ranges from 45.40% to 64.87%, the piezoelectric voltage coefficient ranges from 43.95 * 10 <-3 > to 81.71 * 10 <-3 > Vm / N, the energy collection quality factor ranges from 9.95 * 10 <-12 > to 20.28 * 10 <-12 > m < 2 > / N, and the lead zirconate titanate porous piezoelectric ceramic has good application in high-sensitivity output and excellent energy collection materials.

The application relates to the technical field of piezoelectric materials, in particular to a lead zirconate titanate film and a low-temperature preparation method and application thereof, the preparation method comprising the following steps: Ti metal is taken as a radio frequency target material to perform first sputter deposition treatment on a substrate to form a Ti adhesion layer; a bottom electrode is formed on the Ti adhesion layer; Pb x Zr 0.52 Ti 0.48 O3 ceramic is taken as a radio frequency target material to perform second sputter deposition treatment on the bottom electrode, rapid heat treatment is performed, a PZT seed layer is formed; Pb x Zr 0.52 Ti 0.48 O3 ceramic is taken as a radio frequency target material to perform third sputter deposition treatment on the PZT seed layer, rapid heat treatment is performed, the step is repeated, and a lead zirconate titanate film is formed. In the process of sputter deposition of the PZT film material, the substrate tray is not additionally heated, the loss and volatilization of PbO are reduced, the film component stability can be effectively maintained; more crystal nuclei are provided by the PZT seed layer, the uniform crystallization of the PZT film is promoted, the crystallization quality and electrical properties of the PZT film are improved, the crystal boundary defects are reduced, and the adhesion and stability of the film and the substrate are enhanced.

The invention discloses a high-sensitivity mass-block-free piezoelectric acceleration sensor design which is suitable for weak vibration signal detection in the fields of industrial equipment monitoring, aerospace, consumer electronics and the like. Aiming at the problems of high cost, large size and limited bandwidth caused by mass block design and mechanical rigidity adjustment of a traditional piezoelectric acceleration sensor, a single lead zirconate titanate piezoelectric ceramic (PZT) sheet is adopted as a sensitive element, and collaborative improvement of sensitivity and bandwidth is realized through innovative structural design. The core structure of the sensor comprises an early warning bolt, a gasket, an upper insulating sheet, a lower insulating sheet, a piezoelectric sensitive element and a base. The early warning bolt exerts high pre-tightening force through a shell threaded hole, provides rigid contact downward pressure and ensures the rigidity of the whole structure. The gasket and the upper and lower insulating sheets form complete equal-surface contact, the contact area of the piezoelectric ceramic is maximized, and a traditional mass block is replaced; the insulation sheet is provided with a welding groove and a wiring groove, flatness deviation caused by welding spots is avoided, and charge transmission stability is guaranteed. According to the design, a mass block is omitted, the structure is simplified, the preparation cost is reduced, and meanwhile the size miniaturization of the sensor is achieved through the synergistic effect of high pre-tightening force and a low-rigidity structure. Tests show that the sensitivity of the sensor reaches 192.3 pC / g, the use frequency range covers 10-3000Hz (recommended 10-700Hz), and the sensor has the characteristics of high sensitivity and wide bandwidth, and is suitable for the high-end fields of ultra-precision measurement, extreme environment monitoring and the like.

The application provides a zirconium titanate lead film-based on-chip non-Hermitian extraordinary plane sensing structure and a preparation method thereof, and belongs to the technical field of integrated optical sensing. The sensing structure comprises a micro-ring resonant cavity formed by etching a zirconium titanate lead film wafer and composed of a ridge waveguide, a coupling waveguide located at the upper part of the micro-ring resonant cavity, and a Bragg grating at the right end of the coupling waveguide. An upper metal electrode and a lower metal electrode subjected to electrical polarization treatment are respectively deposited on the upper and lower sides of the right end of the coupling waveguide. The right end of the coupling waveguide, the upper metal electrode, the lower metal electrode and the Bragg grating form a non-Hermitian optical sensing reflection loop, and the coupling waveguide and the micro-ring resonant cavity couple light into the micro-ring resonant cavity through an evanescent wave coupling mode. The zirconium titanate lead film-based on-chip non-Hermitian extraordinary plane sensing structure provided by the application has high integration and stable non-Hermitian extraordinary plane regulation and control capability.

The application provides an energy collection structure based on a piezoelectric effect, and relates to the technical field of energy recycling, which comprises a circular supporting base, the top of the circular supporting base is fixed with a lower supporting plate, one side of the circular supporting base is provided with two first clamping mechanisms, and the top of the two first clamping mechanisms is provided with two second clamping mechanisms. Through cooperation of the beryllium bronze substrate, the lead zirconate titanate piezoelectric plate, the rectangular piezoelectric unit, the first circular magnet and the second circular magnet, the piezoelectric energy collection mechanism can realize multi-point collection, the situation that the whole system is paralyzed when a single energy collection module fails is effectively avoided, and the use efficiency is improved. The three beryllium bronze substrates are stably fixed through cooperation of the lower supporting plate, the upper supporting plate, the bolt, the first clamping mechanism and the second clamping mechanism. The vertical rod, the supporting rod, the connecting strip, the connecting rod and the screw are arranged, so that the spacing between the first clamping mechanism and the second clamping mechanism is conveniently adjusted.

The invention belongs to the technical field of piezoelectric ceramics, and particularly relates to a high-temperature magnesium bismuth titanate-lead zirconate titanate piezoelectric ceramic material and a preparation method thereof. Comprising the following chemical general formula: 0.65 Bi (Mg < 0.51 > Ti < 0.49 >) O < 3 >-0.35 Pb (Zr < x > Ti < 1-x >) O < 3-y > wt% La2O3, wherein x is equal to 0.01 to 0.7, and y is equal to 0.01 to 2. The piezoelectric ceramic material is prepared from the following raw materials: Pb3O4, TiO2, ZrO2, Nb2O5, Bi2O3, MgO and La2O3. The novel piezoelectric ceramic system has higher Curie temperature of 460-520 DEG C, and can work in a high-temperature environment of 260-400 DEG C. The novel piezoelectric ceramic system is suitable for being applied to a high-temperature sensor piezoelectric device.

The invention relates to the technical field of ferroelectric materials, in particular to a ferroelectric functional film and a preparation method thereof. The method comprises the following steps: depositing a target material on a substrate by adopting a pulse laser method, and carrying out post-treatment after deposition to obtain a ferroelectric functional film; the target material comprises one or two of a lead titanate target material and a strontium titanate target material. By changing technological parameters in the pulse laser deposition process, accurate control over the domain structure of the ferroelectric film is achieved, and the high-density and small-size domain structure is formed. The high-density domain structure obviously improves the physical properties such as piezoelectricity, dielectricity and the like of the ferroelectric film, and provides a material basis for high-performance electronic devices. The ferroelectric film prepared by the technology has potential application value in the field of high-density information memories, and is expected to solve the problem of density limitation in the existing storage technology.

The present invention provides a current collector plate with partitioned piezoelectric ceramics. The surface of the current collector plate is divided into several zones. The lead zirconate titanate (PZT) piezoelectric ceramics are prepared by high-temperature sintering, and the oxidation-resistant layer, which also serves as the piezoelectric ceramic's upper electrode, is formed by nickel plating. The present invention also provides a method for detecting the uniformity of force applied to a battery stack package. The method comprises a current collector plate with partitioned piezoelectric ceramics. The upper and lower electrodes of the piezoelectric ceramics are combined with a multi-channel oscilloscope and a computer to form a detection circuit. By calculating the cumulative voltage of each zone during assembly and comparing the force uniformity of different zones, this method can quantify and online detect the force applied to the edges of different zones during battery stack packaging. The current collector plate of the present invention is easy to manufacture, and the PZT piezoelectric ceramics are not easily detached. When combined with a multi-channel oscilloscope and a computer to form a detection circuit, it can quantitatively analyze the force applied to different zones in the battery stack package, effectively detecting potential stress concentration in the stack and reducing the risk of stack leakage and failure.

The invention discloses a receiving type flexible sensor for concrete fracture monitoring and a preparation method, belongs to the technical field of solid electronic devices, and relates to preparation of flexible piezoelectric materials. The size of the sensor is flexibly customized according to a monitoring component, and the preparation method comprises the following steps: preparing a piezoelectric functional phase of the flexible sensor by adopting nanoscale lead zirconate titanate ceramic powder; preparing a SiO2 precursor solution; preparing a PZT / SiO2 spinning solution; preparing a flexible piezoelectric PZT / SiO2 nanofiber membrane by using an electrostatic spinning process; and drying and annealing the flexible piezoelectric PZT / SiO2 nanofiber membrane, and packaging the flexible piezoelectric PZT / SiO2 nanofiber membrane as a sensitive layer of the sensor. The preparation process gets rid of the limitation of the substrate on the flexibility, and the modified PZT surface activity effectively solves the problems of agglomeration and precipitation of particles in a solution. According to the invention, the compatibility between the sensor and complex concrete is improved, fracture elastic waves are sensitively captured, the signal amplitude is up to 75dB, and timely sensing of concrete structure failure is realized.

Embodiments relate to a piezoelectric ceramic and methods of making the same that is suitable for use as a high-power piezoelectric ceramic, and in particular a piezoelectric ceramic that exhibits both good hard properties and good soft properties. Embodiments involve generating the piezoelectric ceramic via the combination of chemical modification / doping and / or a texturing method so that the piezoelectric material exhibits a large figure of merit, as well as other hard and soft properties. The chemical modification involves Cu and Mn doping a piezoelectric material composition having a relaxor-lead titanate based ferroelectric structure. The texturing involves templated grain growth (TGG) texturing using a BaTiO3 (BT) template.

The application discloses a ternary ceramic material of sodium bismuth titanate- strontium titanate-lead titanate with high strain performance obtained by bismuth reduction and a preparation method thereof. The application aims at solving the problems of unstable performance of sodium bismuth titanate ceramic modified by defects, and the need of large electric field driving. The chemical general formula of the ternary ceramic material of sodium bismuth titanate- strontium titanate-lead titanate is (Na 0.5 Bi 0.5 ) 0.75(1‑x) Sr 0.25(1‑x) Pb x TiO3. The ternary ceramic material of sodium bismuth titanate- strontium titanate-lead titanate is prepared by mixing Na2CO3, SrCO3, TiO2, Bi2O3 and PbO in a stoichiometric ratio of (Na 0.5 Bi 0.5 ) 0.75(1‑x) Sr 0.25(1‑x) Pb x TiO3, and then by pressing and sintering. The maximum strain of the ternary ceramic material of sodium bismuth titanate- strontium titanate-lead titanate under an electric field of 80 kV / cm is 2.77%, and the strain memory effect is 1.75%.