Novel growth technology of relaxation ferroelectric monocrystal PIMNT (Lead Magnesium/Indium Niobate-Lead Titanate)

A relaxation ferroelectric single crystal, a new type of technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems that affect the uniformity of material properties, melt leakage, and difficulty in obtaining single crystal materials, etc., to achieve The effect of avoiding melt leakage

Inactive Publication Date: 2013-02-13
NINGBO UNIV
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  • Abstract
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Problems solved by technology

[0005] The PIMNT single crystal system is a solid solution single crystal grown from a multi-component lead-rich melt, and the following inherent technical difficulties exist in the single crystal growth process: (1) The lead oxide content of the PIMNT polycrystalline material is quite high, and this lead-rich melt It has a strong erosive effect on the metal platinum crucible, resulting in tiny holes or cracks in the wall of the platinum crucible, resulting in varying degrees of leakage of the melt in the crucible; The so...

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  • Novel growth technology of relaxation ferroelectric monocrystal PIMNT (Lead Magnesium/Indium Niobate-Lead Titanate)
  • Novel growth technology of relaxation ferroelectric monocrystal PIMNT (Lead Magnesium/Indium Niobate-Lead Titanate)
  • Novel growth technology of relaxation ferroelectric monocrystal PIMNT (Lead Magnesium/Indium Niobate-Lead Titanate)

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Embodiment Construction

[0028] Embodiments of the present invention enumerate as follows:

[0029] (1) Use a platinum plate with a wall thickness of 0.7mm to process a non-equal-diameter cylindrical crucible, and its lower volume is The upper volume is The middle is funnel-shaped. Set Orientation[110], Size The seed crystal is installed in the lower part of the crucible, and then the polycrystalline material is filled in the upper part of the crucible, and then the two ends of the crucible are welded. During the single crystal growth process, the growth furnace is controlled at 1380-1390°C, and the crucible is first adjusted to an appropriate position to melt the polycrystalline material and the top of the seed crystal to form a stable solid-liquid interface with a temperature gradient of 30°C / cm, and keep it warm for 4 After one hour, the crucible was lowered at a rate of 0.5 mm / hour. After the single crystal growth process is over, the furnace temperature is lowered to room temperature at a ...

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Abstract

The invention discloses a novel growth technology of relaxation ferroelectric mono-crystal PIMNT by using a Bridgman-Stockbarger method, belonging to the technical field of mono-crystal growth. The novel growth technology of the relaxation ferroelectric mono-crystal PIMNT comprises the steps of: regarding high-purity PbO, Nb2O5, In2O3, TiO2 and 4MgCO3.Mg(OH)2.4H2O as initial raw materials to prepare a PIMNT polycrystal material through a precursor step-by-step synthesis method, wherein the chemical constitution is xPb(In1/2Nb1/2)O3-yPb(Mg1/2Nb2/3)O3-(1-x-y)PbTiO3, where x=0.24-0.26, and y=0.43-0.45; selecting high-quality seed crystal in a [110], [111] or [001] crystallographic direction; adopting a single-layer or double-layer seamless platinum crucible to contain the seed crystal and a material ingot; putting the crucible after being sealed in a mono-crystal growth furnace; controlling the temperature of the furnace at 1350-1400 DEG C; adjusting the position of the crucible to enable the material ingot to be welded with the top part of the seed crystal so as to form a steady solid-liquid interface with a temperature gradient of 20-50 DEG C; and growing the mono-crystal at a dropping speed of the crucible of less than 1 mm/h to obtain a high-quality and large-size PIMNT mono-crystal. The novel growth technology of the relaxation ferroelectric mono-crystal PIMNT, disclosed by the invention, has the advantages of overcoming a leakage phenomenon of a high-temperature lead-rich melt, avoiding volatilization of components of the melt, and particularly lead oxide steam, efficiently solving a poly-crystallized growth problem of a solid solution with composition complexity, and being suitable for growing high-quality and large-size PIMNT mono-crystals in batches.

Description

technical field [0001] The invention belongs to the technical field of single crystal growth. PIMNT single crystal is a newly discovered high-performance relaxor ferroelectric crystal material in recent years. PIMNT with quasi-isomorphic phase boundary composition has a very high piezoelectric constant. Compared with the traditional piezoelectric material PZT ceramics, its piezoelectric constant d 33 , electromechanical coupling coefficient K 33 From 500pC / N and 60% to about 2000pC / N and 90%, respectively, the strain is as high as 1%, which is an order of magnitude higher than the piezoelectric material with a strain of about 0.1%. It has extremely important application value in high-tech fields such as nanotechnology, ultrasonic motor, and non-destructive testing. High-quality and large-size PIMNT single crystals meeting practical needs can be grown by adopting the technology of the invention. Background technique [0002] Since the late 1990s, material scientists have d...

Claims

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Application Information

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IPC IPC(8): C30B11/00C30B29/22
Inventor 陈红兵梁哲柯毅阳倪峰罗来慧潘建国
Owner NINGBO UNIV
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