The invention discloses a preparation method for a relaxor ferroelectric single crystal raw material. The relaxor ferroelectric single crystal raw material comprises lead magnesium niobate-lead titanate (PMN-PT), lead zinc niobate-lead titanate (PZN-PT), lead indium niobate-lead titanate (PIN-PT), lead indium niobate-lead magnesium niobate-lead titanate (PIN-PMN-PT) as well as PMN-PT, PZN-PT, PIN-PT and PIN-PMN-PT which are subjected to doping modification. The preparation method comprises the following steps: adopting basic magnesium carbonate containing crystal water, rutile titanium dioxide, high-purity niobium pentoxide, high-purity indium sesquioxide, high-purity zinc oxide and high-purity lead oxide as raw materials, performing step sintering to finally synthesize a single crystal raw material of required chemical composition, performing processes of secondary ball milling, drying, granulating, forming, adhesive removal, ceramic firing and the like on the synthesized single crystal raw material to prepare a ceramic raw material matched with a growth crucible in shape, and filling the growth crucible with the ceramic raw material. According to the preparation method, the quality of finished crystals can be remarkably improved and the seepage risk of the crucible can be reduced.