The invention discloses a high use temperature lead-free PTCR (positive temperature coefficient resistance) ceramic and a preparation method thereof, and belongs to the field of lead-free electronic ceramic materials. A general formula of the material composition is as follows: (Na0.5Bi0.5)x1 (Ba1-x1-x2Ax2) Ti1-yByO3+zmol%M), wherein x1 is greater than or equal to 0.08 and less than or equal to 0.6, x2 is greater than or equal to 0 and less than or equal to 0.2, y is greater than or equal to 0 and less than or equal to 0.05, z is greater than or equal to 0 and less than or equal to 3, A is one or more of Sr, Ca, Bi, Y and La, B is one or more of Zr, Sn, Mn, Cu, Nb, Ta and Sb, and M is one or more of Al2O3, SiO2, TiO2, BaO and B2O3. The high use temperature lead-free PTCR ceramic prepared by method has the following performance indicators: Curie temperature is at 175 to 235 DEG C; resistance jump ratio is 2 to 5 orders of magnitude; room temperature resistivity is 60-106 Omega .cm; temperature coefficient of resistance is 10-20% / DEG C; and withstand voltage strength is 150-220V / mm (a.c.). A ceramic sample is prepared in nitrogen by one-step sintering method, and has the advantages of simple controllable process, stable material performance and good repeatability.