17 results about "Electronic ceramics" patented technology

This invention discloses a conductive paste for metallization of electronic ceramics, belonging to the field of electronic materials technology. The conductive paste for metallization of electronic ceramics of this invention includes copper alloy powder, glass powder, and an organic carrier. By controlling the ratio of copper, aluminum, and zinc in the copper alloy, the thermal expansion coefficient of the alloy is adjusted, making it compatible with electronic ceramic substrates such as alumina ceramics and zinc oxide varistors, achieving metallization through sintering under air conditions. The addition of tin improves the solderability of the metallized layer, meeting the process requirements of electronic components. The glass powder added in this invention has a low initial melting temperature, high bonding strength with the copper alloy, and strong adhesion to the ceramic substrate; combined with a specific ratio of organic carrier, it effectively improves the conductivity of the metallized layer after sintering.

The application belongs to the technical field of electronic ceramic materials, and particularly relates to a high-performance Y5P type barium titanate-based ceramic material sintered in air atmosphere and a preparation method thereof. The ceramic material takes BaTiO3 as a main raw material, is supplemented with MgCO3, ZnO, MnCO3, ZrO2, Nb2O5 and La2O3 as composite modification additives, and after sintering in air atmosphere, the ceramic material forms a dense and uniform microstructure, has excellent dielectric properties: a dielectric constant (ε) is 2800-3500, a dielectric loss tangent (tan δ) is as low as 1.1% or below, a volume resistivity (ρ) is 1.0*10 12 Ω·cm or above, a content temperature change rate is-9.8%-+9.1% in a temperature range of-30 DEG C to 85 DEG C, and meets a Y5P type temperature characteristic standard (ΔC / C 25 ℃≤±10%). The material can realize high insulation resistance, low loss and stable temperature characteristics by being directly sintered in air, does not need a complex reduction and reoxidation process, is suitable for preparing ceramic capacitors with high reliability and low cost, and is particularly suitable for the fields of consumer electronics and industrial electronics with medium-high voltage and high stability requirements.

This application discloses a method for fabricating conductive lines on a multilayer co-fired ceramic substrate and the multilayer co-fired ceramic substrate itself, relating to the field of electronic ceramic multilayer co-fired manufacturing technology. The method for fabricating conductive lines on the multilayer co-fired ceramic substrate includes: providing a green ceramic film strip for multilayer stacking and co-firing; forming conductive patterns on the surface of the green ceramic film strip using nanoimprinting technology, aligning and stacking it with at least one other green ceramic film strip, and laminating it to form a stack; and performing adhesive removal and co-firing treatment on the stack to form embedded conductive lines within the stack. The fabrication method proposed in this application can fabricate conductive lines with linewidths and spacings less than 50 μm, achieving embedded forming of conductive lines in multilayer structures. It can be used in conjunction with via drilling / filling and stack alignment processes for precision packaging of three-dimensional integrated circuits such as high-density multilayer wiring, high-frequency and high-speed circuits, and power electronic integration.

The application discloses a composite gyromagnetic ferrite substrate material for an LTCF phase shifter and belongs to the technical field of electronic ceramic materials. 4+ 3+ 3+ The main LiZn ferrite is selected from Ti 4+ , Mn 3+ , Bi 3+ ion substituted iron-deficient formula, which ensures low-temperature sintering and has high saturation magnetization and low ferromagnetic resonance line width; the auxiliary SrM ferrite is selected from micro-nano structure particles with high Curie temperature, the SrM ferrite with the structure has high sintering activity, and is beneficial to forming a multiple dense microstructure mainly with fine grains in the low-temperature sintering process, so that the material has high residual magnetism ratio and high saturation magnetization.

This invention relates to a low-loss microwave ferrite material for LTCF phase shifters and its preparation method, belonging to the field of electronic ceramic materials technology. The microwave ferrite material comprises a main material and auxiliary materials, with the auxiliary materials accounting for 0.01–2 wt.% of the main material. The main material consists of: Li₂CO₃ 11.65–12.33 mol%, ZnO 17.61–22.18 mol%, TiO₂ 8.22–13.31 mol.%, Mn₃O₄ 1.85–1.96 mol%, Fe₂O₃ 50.93–59.79 mol%, and Bi₂O₃ 0.08–0.09 mol%. The auxiliary material is rutile or anatase TiO₂ with a particle size of 5 nm–50 nm. The low-loss microwave ferrite material for LTCF phase shifters prepared by this invention, in addition to having a low sintering temperature (≤910℃), also has a narrow ferromagnetic resonance linewidth (≤90Oe) and low dielectric loss (<3×10⁻⁶). ‑4 It possesses high saturation magnetization (>3700 Gauss), high remanence ratio (>0.85), and high Curie temperature (>300℃). The fabricated microwave ferrite not only meets the requirements of LTCF process but also possesses excellent magnetic properties required for key substrate materials in microwave devices such as low-loss phase shifters.

This invention provides a composite microwave dielectric ceramic, its preparation method, and its application, belonging to the field of electronic ceramics technology. The composite microwave dielectric ceramic provided by this invention includes a main material, auxiliary materials, and sintering aids; the main material is Mg2SiO4; the auxiliary materials include composite perovskite ceramics and metal oxides; the composite perovskite ceramic is Ba... 0.5 Sr 0.5 TiO3; the metal in the metal oxide and / or metal carbonate includes one or more of Ba, Zn, Zr, and Mn. The composite microwave dielectric ceramic provided by this invention possesses low dielectric constant εr, low dielectric loss, and a near-zero resonant frequency temperature coefficient τf. Simultaneously satisfying the advantages of low loss DF, low dielectric constant εr, and near-zero resonant frequency temperature coefficient τf, it can meet the requirements of 5G microwave and millimeter-wave band communication products.

The application discloses a preparation method of electronic-grade barium hydroxide monohydrate and belongs to the technical field of electronic ceramic and new energy battery materials. The method effectively inhibits stress corrosion cracking and caustic embrittlement of a stainless steel crystallization kettle in the crystallization process of barium hydroxide monohydrate by controlling the slurry concentration and temperature, controlling the vacuum degree, controlling the material reaction time, using various additives, using seed crystals and other means, so that the conventional stainless steel crystallization kettle can be stably operated in a high-temperature strong-alkali environment for a long time. Moreover, the prepared barium hydroxide monohydrate has a purity of 99.5% or above, the generation of impure barium hydroxide is avoided, and the safe use of the barium hydroxide monohydrate material on electronic ceramic materials and new energy automobile batteries is ensured.

This invention discloses a nanoscale α-alumina and its preparation method. Polyethylene glycol, citric acid, and ammonium aluminum sulfate are sequentially added to a urea solution and mixed to obtain a mixed solution. Ammonia water is then added dropwise to the mixed solution, and the mixture is allowed to stand and age to obtain a precursor suspension. The precursor suspension is then separated into solid and liquid phases, and the resulting solid phase is the alumina precursor. The alumina precursor is then calcined to obtain α-alumina. The α-alumina provided by this invention is a pure phase, free of impurities such as γ-Al₂O₃, with a complete crystal structure, a particle size ≤150 nm, a particle size distribution CV value <15%, excellent dispersibility, no obvious hard agglomerates, and a higher specific surface area, making it suitable for applications in high-end electronic ceramics, precision polishing, and other fields.

The application belongs to the technical field of electronic ceramic element forming materials, and particularly relates to a superhigh-pressure-resistant forming film for multilayer ceramic capacitor and inductor and a preparation method thereof, wherein the forming film comprises a modified PET base material and an organic silicon superhigh-pressure-resistant pressure-sensitive adhesive layer coated on at least one surface of the modified PET base material. The modified PET base material is subjected to bidirectional stretching and heat setting treatment, the tensile strength is greater than or equal to 200 MPa, and the heat shrinkage rate after being treated at 80 DEG C for 2 hours is less than or equal to 0.2%. The pressure-sensitive adhesive layer comprises a methyl vinyl silicone rubber prepolymer, a hydrogen-containing silicone oil crosslinking agent, a nano reinforcing filler, a composite interface modifier, a platinum catalyst and an inhibitor. The forming film is not broken and layered under the superhigh-pressure pressing condition of 180 MPa and 80 DEG C, the residual adhesive rate is less than 0.03%, the ceramic sheet is not deformed, and the forming film has excellent high-pressure resistance, size stability and clean peeling performance, and is suitable for manufacturing high-end MLCCs and chip inductors.

The utility model discloses an electronic ceramic with double -layer electrode, including ceramic chip, first metal electrode layer, second metal electrode layer, pin, solder layer and packaging layer, first metal electrode layer is sprayed on the front and back of ceramic chip, second metal electrode layer is sprayed on first metal electrode layer surface, the surface of second metal electrode layer is equipped with conductive convex portion, and the pin is connected in conductive convex portion surface through solder layer, and the packaging layer is wrapped in the outside of ceramic chip, the utility model discloses through setting first metal electrode layer on the front and back of ceramic chip, and the surface thermal spraying second metal electrode layer of first metal electrode layer, first metal electrode layer can enhance the adhesion with ceramic chip, avoid electrode peeling, second metal electrode layer can reduce contact resistance, improve conductivity, and conductive convex portion can promote current channel efficiency, and promote the conductivity stability of electronic ceramic component.

This invention relates to the field of electronic packaging ceramic materials technology, and discloses a high thermal conductivity, low expansion modified electronic ceramic substrate, comprising a modified composite ceramic matrix and nanoscale bonding transition layers grown in situ on both sides of the modified composite ceramic matrix; the modified composite ceramic matrix comprises, by mass parts: 65-85 parts of main crystalline phase, 10-25 parts of low expansion regulating phase, 2-8 parts of nano-thermal conductivity reinforcing phase, and 3-10 parts of composite sintering aid. This invention uses a composite of hydroxylated modified AlN and coupled modified Al₂O₃ as the main crystalline phase, which retains the intrinsic high thermal conductivity of AlN while significantly reducing raw material costs and sintering difficulty through Al₂O₃. Simultaneously, through hydrothermal hydroxylation modification, a dense hydroxyl protective layer is constructed on the surface of the AlN powder, completely solving the industry pain point of easy hydrolysis of AlN powder, improving powder storage stability by more than 10 times, and significantly improving batch-to-batch consistency of substrate performance.

The application relates to a low-temperature sintered zinc oxide pressure-sensitive resistor material and a preparation method thereof, and relates to the technical field of electronic ceramic materials. The preparation method comprises the following steps: ZnO, Bi2O3, Sb2O3, MnO2, Cr2O3, Co2O3, Y2O3, Nb2O5 and Al(NO3)3.9H2O are weighed, mixed, granulated, pre-sintered, formed, and then sintered at 850-900 DEG C in a microwave-assisted temperature field control sintering furnace. The microwave-assisted temperature field control sintering furnace comprises a furnace body, a multi-mode resonant cavity with an open bottom, a bearing platform, a lifting mechanism, a microwave generating system, a temperature measuring system and a closed loop module; the bearing platform is lifted to be in sealed contact with the bottom opening of the multi-mode resonant cavity to form a microwave sealed space; the temperature measuring system adopts an infrared and optical fiber temperature sensor, and the closed loop module adjusts the microwave power in real time through a PID algorithm. The application realizes low-temperature sintering, the product is dense and excellent in nonlinearity, and the equipment is uniform in temperature field and accurate in temperature measurement.

This utility model relates to the field of electronic ceramic component processing technology, and specifically discloses a drilling device for electronic ceramic components, including a base, dovetail grooves symmetrically formed on the upper end of the base, a fixing post fixedly installed at the center of the upper end of the base, threaded rings threaded at both ends of the fixing post, and first springs symmetrically fixedly installed on the fixing post. L-shaped plates are symmetrically slidably installed inside the two dovetail grooves, and dovetail blocks are symmetrically fixedly installed at the lower ends of the two L-shaped plates. Two sets of dovetail blocks are slidably installed in the two sets of dovetail grooves respectively. A clamping mechanism is slidably installed inside the two L-shaped plates. The clamping mechanism includes a sliding plate, two sliding plates are slidably installed in the two L-shaped plates respectively, and a first screw is threadedly installed inside the two sliding plates. The two first screws are rotatably installed in the two L-shaped plates respectively. This device avoids the limitation of application scope caused by the fixed size of traditional devices, and significantly improves the versatility of the device and the diversity of application scenarios.

The present application relates to the field of electronic ceramics and additive manufacturing technology, and particularly relates to a barium modified sodium borosilicate LTCC substrate and a photocuring 3D printing preparation method thereof. The method comprises the following steps: mixing sodium carbonate, boric acid and silicon dioxide to obtain sodium borosilicate glass powder through melting, water quenching and ball milling; mixing the glass powder, ceramic filler, photosensitive resin and barium carbonate to obtain photocuring slurry; forming ceramic green body through photocuring 3D printing; and obtaining the LTCC substrate through debinding and sintering in air atmosphere. The addition amount of barium carbonate satisfies that the theoretical mass of barium oxide generated by decomposition during debinding and sintering accounts for 2% of the total mass of the glass powder and the ceramic filler. By introducing barium carbonate and controlling the addition amount, the present application utilizes the synergistic effect of the thermal decomposition characteristics of barium carbonate and the liquid phase sintering behavior of sodium borosilicate glass, effectively heals the degassing pore, and inhibits the high-frequency polarization loss of alkali metal ions, so that the LTCC substrate has high density and wide frequency and low dielectric loss, and is suitable for high-frequency communication device packaging.

This invention relates to the field of electronic ceramic substrates and provides a method for preparing a black alumina substrate, which solves the defects of existing black alumina substrates, such as low thermal conductivity and low mechanical strength, due to defects in the preparation process. The preparation steps include: (1) preparing raw materials; (2) preparing slurry; (3) casting; (4) debinding; (5) sintering; (6) annealing; and (7) surface treatment.

The utility model discloses a kind of composite electrode structures of electronic ceramic chip, including ceramic chip, first metal electrode layer and second metal electrode layer;The first metal electrode layer is sprayed on the front and back of ceramic chip, the second metal electrode layer is sprayed on the surface of first metal electrode layer, the area of second metal electrode layer is less than or equal to the area of first metal electrode layer, the middle part of second metal electrode layer is equipped with protruding part.The utility model by spraying first metal electrode layer on the front and back of ceramic chip, and spraying second metal electrode layer on the surface of first metal electrode layer, so, can be through the interface bonding of first metal electrode layer and generate force, enhance the adhesion of second metal electrode layer, avoid the problem that electrode falls off or cracks;The protruding part set in the middle part of second metal electrode layer, can form greater cladding area in welding process, and improve the current conduction performance of electronic ceramic.

This invention provides a method, substrate structure, and composite substrate for producing a multilayer ceramic-metal integrated substrate, relating to the field of electronic ceramic surface metallization. The method involves pre-setting a first slot on a metal substrate, then assembling the first slot or multiple compatible first slots on the metal substrate to form a ceramic slot for spaced installation of multilayer ceramic substrates. A metallization process is then used to integrate the metal substrate and the multilayer ceramic substrate, forming a vertically structured multilayer ceramic-metal integrated MCMI substrate. Finally, the upper and lower surfaces of the MCMI substrate are metallized to form a metallized MCMI substrate. Compared to existing technologies, this invention forms an integrated heat conduction path directly from the chip to the heat dissipation substrate. By optimizing the combination and integration of the metal substrate and the ceramic substrate, it not only significantly improves the heat dissipation performance of the substrate structure but also allows for customized substrate structure performance.