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75results about How to "Improve sintering properties" patented technology

Low temperature sintering piezoelectric ceramic material and preparation method thereof

The invention discloses a low temperature sintering piezoelectric ceramic material, wherein composition of the material is represented by a chemical general formula Pb(0.995-a-b-3c / 2)BaaSrbFec(Zn1 / 3Nb2 / 3)xZryTi(1-x-y)O3+u%Li2CO3+v%M2O3+w%ZnO, M is a trivalent metal element, a molar ratio of Ba to Sr to Fe to (Zn1 / 3Nb2 / 3) to Zr is a:b:c:x:y, a is more than or equal to 0 and is less than or equal to 0.05, b is more than or equal to 0 and is less than or equal to 0.03, c is more than or equal to 0 and is less than or equal to 0.01, x is more than or equal to 0.25 and is less than or equal to 0.35, y is more than or equal to 0.30 and is less than or equal to 0.40, the Pb(0.995-a-b-3c / 2)BaaSrbFec(Zn1 / 3Nb2 / 3)xZryTi(1-x-y)O3 is adopted as matrix ceramic powder, u% represents a weight percentage of Li2CO3 in the matrix ceramic powder, v% represents a weight percentage of M2O3 in the matrix ceramic powder, w% represents a weight percentage of ZnO in the matrix ceramic powder, u is more than 0 and is less than or equal to 1, v is more than 0 and is less than or equal to 2, and w is more than 0 and is less than or equal to 0.2. According to the present invention, an oxide dopant is added and combined, such that a sintering temperature of the ceramic can be reduced to a temperature of 900 DEG C from a temperature of 1200 DEG C, a high piezoelectric constant (d33 is more than or equal to 450 pC / N ), a high electromechanical coupling coefficient (KP is more than or equal to 0.60), a high Curie point (Tc is more than 350 DEG C) and a moderate dielectric constant (epsilonr is 2000-3500) can be obtained, and application requirements on the ceramic material by the laminated piezoelectric driver are met.
Owner:HUAZHONG UNIV OF SCI & TECH

New method for finely preparing ixiolite structure MgTiNb2O8 microwave dielectric ceramic by using chemical process

The invention belongs to the technical field of electronic ceramic preparation and application, and particularly relates to a method for fine synthesis of a ternary MgO-Nb2O5-TiO2 system microwave dielectric ceramic by using a sol-gel method. The technical scheme comprises adopting a sol-gel method to finely synthesize a ternary MgO-Nb2O5-TiO2 system microwave dielectric ceramic, and specifically comprises: 1) preparing a citric acid aqueous solution of Mg ions; 2) preparing a citric acid aqueous solution of Ti ions and Nb ions; and 3) synthesizing a ternary MgTiNb2O8 microwave dielectric ceramic nanometer precursor, and preparing the ceramic. The ternary MgO-Nb2O5-TiO2 system microwave dielectric ceramic has significant advantages of low synthesis temperature, uniform ceramic particles, good ceramic particle dispersity, pure phase, nano-scale powder (particle size of about 50 nm), high specific surface energy, high activity and the like. In addition, compared with the conventional solid-phase method, the method of the present invention has the following characteristics that: the sintering temperature can be significantly reduced by 100-200 DEG C so as to achieve low temperature sintering, maintain the good microwave dielectric property, and meet the LTCC application requirements.
Owner:UNIV OF JINAN

Preparation method of zinc cobalt sodium silicate nano powder

The invention discloses a preparation method of zinc cobalt sodium silicate microwave dielectric ceramic nano powder. The method comprises the following steps: (1) firstly preparing a zinc nitrate solution and a cobalt nitrate solution and then mixing the two solutions, wherein the raw material components and molar percentage content are shown in the following formula: CoxZn2-xSiO4, and x is larger than 0 and less than or equal to 1; (2) preparing a tetraethyl orthosilicate solution; (3) dropwise adding the mixed solution in the step (1) to the tetraethyl orthosilicate solution, wherein the pH value is 2-4, adding deionized water and then magnetically stirring so as to obtain CoxZn2-xSiO4 sol; (4) drying the CoxZn2-xSiO4 sol to form jelly-shaped gel, and then drying the gel to form dried gel; and (5) thermally treating the dried gel at the temperature of 650-950 DEG C so as to obtain the CoxZn2-xSiO4 nano powder. The CoxZn2-xSiO4 nano powder prepared by using the method has an averageparticle size of 90nm and has the advantages of high purity, simple process, cheap raw material, high activity and good sintering property; and the sintering temperature of the nano power is lowered by 100-300 DEG C as compared with that of a solid phase method, and a material support is provided for preparation of high-property CoxZn2-xSiO4 microwave dielectric ceramic.
Owner:TIANJIN UNIV

Leadless piezoelectric ceramics with bismuth ion replacing modified potassium sodium niobate base and method for preparing same

The invention relates to a modified potassium-sodium niobate based leadless piezoelectric ceramics substituted by bismuth ion and a preparation method thereof; the raw materials includes anhydrous potassium carbonate, anhydrous sodium carbonate, niobium pentaoxide and dibismuth trioxide; the stoichiometric ratio thereof is ((K0.5Na0.5)1-3xBix)NbO3(x is more than or equal to 0.0 and less than or equal to 0.05), wherein, x is more than or equal to 0.0 and less than or equal to 0.5; the bismuth ion is added to replace the ion at A position in (K0.5Na0.5)NbO3 ceramics, thus improving sintering characteristics and ferroelectric properties of potassium-sodium niobate ceramics and further enhancing piezoelectric properties thereof. During preparation, according to the principle of electrical valence equilibrium, the bismuth ion is added and K ion and Na ion are reduced at the same time, thus generating the vacancy at the A position and avoiding the formation of residual matter; therefore, the piezoelectric properties d33 and kp can reach 164pC / N and 47% respectively; moreover, the invention is characterized by broad source of the raw materials, good stability of the technique and no environment pollution.
Owner:NORTHWESTERN POLYTECHNICAL UNIV

Preparation method of bismuth ferrite-lead titanate-bismuth magnesium niobate ternary system high-temperature piezoelectric ceramic

The invention belongs to the field of piezoelectric ceramic materials, and particularly relates to a preparation method of bismuth ferrite-lead titanate-bismuth magnesium niobate ternary system high-temperature piezoelectric ceramic. The chemical formula is (1-x-y) BiFeO3-xPbTiO3-yBi (Mg2 / 3Nb1 / 3) O3, x and y are molar weights, and x is more than or equal to 0.20 and less than or equal to 0.40; 0.01 < = y < = 0.10; the auxiliary component is mBi2O3 + nPbO + zMnO, m, n and z are the mass percent of the total formula, and m is larger than or equal to 0 and smaller than or equal to 0.10; 0 < = n < = 0.10; 0 < = z < = 0.10. The preparation method comprises the following steps: S1, weighing the raw materials; s2, carrying out primary ball milling; step S3: drying; s4, performing solid-phase synthesis; step S5, carrying out secondary ball milling; step S6, granulating and forming; step S7, glue discharging; step S8; and step S9. The sintering temperature of a system can be reduced, ceramic densification is promoted, cracking and pulverization are avoided, the ceramic has the good sintering characteristic, the c / a ratio of the system is reduced, the material is easy to polarize, the ceramic obtains the large piezoelectric coefficient under the condition that the high Curie temperature is guaranteed, the insulativity and temperature stability of the material are improved, and the service life of the material is prolonged. And practical application of devices at high temperature is facilitated.
Owner:XIAN INT UNIV

Low temperature co-fired ceramic (LTCC)-based metamaterial harmonic oscillator and manufacturing method thereof

The invention provides a low temperature co-fired ceramic (LTCC)-based metamaterial harmonic oscillator and a manufacturing method thereof. The manufacturing method comprises the following steps of: preparing ceramic slurry from nano ceramic powder, and casting to prepare a green tape; manufacturing a metal microstructure on the green tape to form green ceramic chips through screen printing; superposing the green ceramic chips, putting the green ceramic chips into a mold after tape ranking to form a presintering whole; and performing hot-pressing and cooling the presintering whole to obtain the metamaterial harmonic oscillator. Because the nano-powder has high sintering property, the sintering temperature of the nano ceramic powder can be reduced in the process of preparing the metamaterial harmonic oscillator from the nano ceramic powder; and therefore, a sintering aid is not added into the nano ceramic powder or a small amount of sintering aids can be added into the nano ceramic powder so as to realize low-temperature co-firing, and the loss of the metamaterial harmonic oscillator is reduced; by the hot-pressing technology, the phenomena of layering and warping in the sintering process are avoided, and the sintering temperature is lower than the traditional pressureless sintering temperature under the pressure conditions, and the sintering temperature is reduced further.
Owner:KUANG CHI INST OF ADVANCED TECH

High-Q-value lithium titanate-based microwave dielectric ceramic material and preparation method thereof

The invention belongs to the technical field of ceramic materials, and discloses a high-Q-value lithium titanate-based microwave dielectric ceramic material and a preparation method thereof. The preparation method comprises the following steps: subjecting Li2CO3 and TiO2 to burdening, ball milling, drying and sieving according to a stoichiometric formula Li2TiO3 and then performing presintering at a temperature of 800-1000 DEG C; adding an M doping agent, carrying out ball milling, drying, sieving and granulating successively, and conducting pressing to obtain a green body; and sintering the green body at a temperature of 1100-1180 DEG C. The chemical formula of the obtained high-Q-value lithium titanate-based microwave dielectric ceramic material is Li<2>TiO<3+x>M, wherein M is Li2CO3, MgO, LiF, MgF2 or MgO + LiF, and x is equal to 0.6 wt.%-3.6 wt.%. According to the invention, different types of dopants are introduced into Li2TiO3, so the sintering characteristic of microwave dielectric ceramic is improved, and the defect that the Qf value of pure Li2TiO3is low is overcome; the produced material has a high quality factor and a moderate dielectric constant; a preparation process is simple; and microwave dielectric devices manufactured, researched and developed on the basis of the material have wide application prospects.
Owner:TIANJIN UNIV

High-conductivity glass powder and preparation method thereof, and barium titanate-based glass ceramic based high-conductivity glass powder, and preparation method thereof

The invention discloses high-conductivity glass powder and a preparation method thereof, and a barium titanate-based glass ceramic based the high-conductivity glass powder, and a preparation method thereof. According to the present invention, 0.85BaTiO3-0.15Bi(Mg2/3Nb1/3)O3(BTBMN) ceramic powder is prepared by using a solid phase method, a low-melting-point high-conductivity glass B2O3-Na2B4O7-Na2SiO3(BNN) is prepared at a temperature of 900-1000 DEG C by using a melting method, high temperature taking and quenching is performed to obtain a glass, and a BTBMN-xBNN(BG)glass ceramic is preparedby using a solid phase method, wherein x represents the mass fraction of the BNN glass, and x is more than or equal to 1% and is less than or equal to 12%; the dense BG glass ceramic is obtained by sintering at a temperature of 850-1225 DEG C by adjusting the glass addition amount; the glass ceramic has an electric field strength of 240 kV/cm, a release energy density of 1.26 J/cm<3> and an energystorage efficiency of 81%, can meet a temperature change rate |[delta]C/C25 DEG C| of less than or equal to 15% within a temperature range of -61-275 DEG C, has good dielectric constant temperature stability, and can meet the temperature stability requirements of general capacitor operation; the glass ceramic material preparation process is simple, the technology is mature, and the method is suitable for industrial production; and the obtained glass ceramic has high puncture strength and good temperature stability.
Owner:SHAANXI UNIV OF SCI & TECH
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