36 results about "Mn doping" patented technology

The invention discloses an oil-soluble Mn-doped CsPb(Cl/Br)3 dual-emission nanocrystal and a preparation method thereof. The preparation method comprises the following steps: (1) synthesizing an all-inorganic CsPbBr3 perovskite nanocrystal precursor; and (2) carrying out halide-ion-exchange-assisted Mn-to-Pb ion exchange. The preparation method is carried out at room temperature, is simple in process and easy to operate, has the advantages of convenient raw material supply and low raw material price, can be completed in a common chemical laboratory, and thus, is easy to popularize. The Mn-doped CsPb(Cl/Br)3 nanocrystal has two emission peaks (perovskite intrinsic emission and Mn ion emission). The Mn-doped CsPb(Cl/Br)3 dual-emission nanocrystal obtained by the preparation method has high 56% fluorescence quantum yield, and can be used for manufacturing ratiometric temperature probes by utilizing the dual-peak-intensity temperature dependence characteristic.

The invention relates to a catalyst for low temperature catalytic combustion of polychlorinated aromatic hydrocarbon. The catalyst is Fe, Ni, Cr, Bi or Mn doped with tricobalt tetroxide. The catalyst is used for low temperature catalytic combustion elimination of the polychlorinated aromatic hydrocarbon, and is high in activity, high in chlorine poisoning resistance, long in catalytic life and has few by-products, thus being especially suitable for eliminating the polychlorinated aromatic hydrocarbon by low temperature catalysis. In air, the catalyst can be used for stably converting the polychlorinated aromatic hydrocarbon in the waste into carbon dioxide and hydrogen chloride for a long time at the lower reaction temperature, and the activity of the catalyst is not lowered.

The invention relates to a method of a Mn doped ZnS quantum dots room temperature phosphorescence detecting an enoxacin in the biological body fluids. The invention uses the room temperature phosphorescence properties of the Mn doped ZnS quantum dots, and provides a simple, fast, economical, keen and highly selective method to detect the enoxacin in the biology body fluids; the Mn doped ZnS quantum dots are dissolved to be a solution, a urine sample or a serum sample is diluted into 30, 50 or 80 times for detecting the linear equation of the enoxacin, whose linear range is 0.2-7.2 mu mol/L, and detection limit is 58.6 nmol/L; when the method is used to detect the enoxacin in the biological body fluids, an oxygen scavenger and a inducer are not need to add, and the background fluorescence and the interference of scattered light can be avoided. Simultaneously, due to the high selectivity of the method, when the enoxacin is detected in the biological body fluids, a complex sample pretreatment process is not needed.

The present invention relates to a fabrication method of gallium manganese nitride (GaMnN) single crystal nanowire, more particularly to a fabrication method of GaMnN single crystal nanowire substrate by halide vapor phase epitaxy (HVPE) in which such metal components as gallium (Ga) and manganese (Mn) react with such gas components as nitrogen (N₂), hydrogen chloride (HCl) and ammonia (NH₃), wherein the amount of the gas components are adjusted to control the Mn doping concentration in order to obtain nanowire having a perfect, one-dimensional, single crystal structure without internal defect, concentration of holes, or carriers, and magnetization value of which being determined by the doping concentration and showing ferromagnetism at room temperature, thus being a useful spin transporter in the field of the next-generation spintronics, such as spin-polarized LED, spin-polarized FET, etc.

The present invention provides a doped semiconductor nano-crystalline and its preparing method. The doped semiconductor nano-crystalline is MnSe/ZnSe/ZnS, using Mn doping with ZnSe semiconductor nano-crystalline as a case, covering with core-shell structure nano-crystalline of ZnS layer. The covering range of the photoluminescence peak of the semiconductor nano-crystalline is 570-610nm, having better monodispersity, the quantum yield is more than 50%, the fluorescence stability is higher. The invention has a simply synthetic method, simply doped process, convenient control for doped quantity, avoiding the use of combustible and explosible medicine at the same time.

The invention discloses a method for preparing a binary alternatively-doped BST membrane, belongs to the technical field of functional materials, and relates to a method for preparing a nanocrystalline BST membrane. The method adopts binary doping of Mn and Y, namely, carries out Mn or Y doping on an odd layer membrane and carries out Y or Mn doping on an even layer membrane; and the method adds a pre-crystallization processing step between cooling and crystallization steps. The membrane prepared by the method is smooth and compact with no crack or shrinkage cavity, and can greatly enhance the comprehensive dielectric tuning performance of the nanocrystalline BST membrane; and the obtained nanocrystalline BST membrane has a dielectric tuning rate of over 30.0 percent, a dielectric loss of less than 2.0 percent, a K factor of greater than 15.5, a high dielectric strength and a stable frequency characteristic and a temperature characteristic. The nanocrystalline BST membrane prepared by the method can be used for preparing a microwave tuning device (such as a phase shifter) instead of a ferrite and a semiconductor so as to remarkably reduce the manufacturing cost of the microwave tuning device; and furthermore, the nanocrystalline BST membrane prepared by the method is applicable for magnetic recording, pyroelectric focal plane arrays and the like.

The invention discloses a method for preparing a Mn-doped bismuth sodium titanate-barium titanate film, comprising the following steps that: high-purity Bi2O3, Na2CO3, BaCO3 and TiO2 are taken as the raw materials and subjected to wet milling by a zirconium ball in absolute ethyl alcohol, drying, tabletting and calcination at a certain air pressure to obtain perovskite structure powder; the obtained perovskite structure powder is subjected to secondary ball milling, drying, tabletting and heat preservation for 1-4 hours at the temperature of 1200 DEG C to obtain a target material by sintering; the target material and the substrate are installed and the target-substrate distance, the sputtering temperature, the power and the frequency are adjusted; after the sputtering, in-situ annealing is performed, the oxygen pressure is maintained and the temperature is lowered to room temperature by naturally cooling to prepare the Mn-doped bismuth sodium titanate-barium titanate film. The orientation and the thickness of the film can be adjusted by technological parameters and the prepared lead-free piezoelectric film shows better ferroelectric and dielectric properties. The method has the advantages of convenience in operation and good repeatability.

The invention provides a synthesis method of high-fluorescence-efficiency Mn doping Cs2AgInCl6, and belongs to the technical field of semiconductor nanometer material preparation. According to the method, firstly, cesium chloride, silver chloride and indium chloride are mixed; then, grinding is performed; the mixture gradually becomes hard from puff white powder to be attached onto a container wall and then becomes soft; continuous grinding is performed until the mixture becomes the puff white powder again; next, manganese chloride is added; continuous grinding is performed until the pink ultra-dry manganese chloride is uniformly dispersed into a reaction system; when the pink color disappears, the grinding is stopped; the obtained product is cleaned by ethanol, and then dried for 2 hoursunder the vacuum conditions of 60 to 350 DEG C; high-fluorescence-efficiency Mn<2+> Cs2AgInCl6 is obtained. The synthesis method has the advantages that the operation is simple; the method is simple;the fluorescence quantum yield is high; the industrialized production can be easily realized, and the like.

The utility model discloses a method for preparing the GaMnN diluted magnetic semiconductor nanowire, comprising the following steps: 1) Mn doping: Mn is in-situ doped on the Ga2O3 nanowire; 2) ammonification: the Ga2O3 nanowire doped with the Mn is aminated in the ammonia atmosphere to obtain the GaMnN diluted magnetic semiconductor nanowire. The utility model has the advantages of simple method, low requirement for the equipment, strong ferromagnetism of the prepared GaMnN nanowire, higher Curie temperature than the ambient temperature, controllable magnetic doping concentration, high purity of the nanowire, high output and controllable linear (the nanowire with diameter varying from tens of nanometer to hundreds of nanometer is prepared through adjusting the growing parameters such as air pressure). The utility model is applied for producing the nanometer spin electronic devices, such as spin field effect transistor (spin-FET), spin light emitting diode (spin-LED) and spin resonance tunneling device (spin-RTD) and has broad application prospect.

The invention relates to a Mn-doped sodium bismuth titanate-potassium bismuth titanate-strontium titanate ternary series piezoelectric film material and a preparation method thereof. According to 0.95(0.8Bi<1/2>Na<1/2>TiO3-0.2Bi<1/2>K<1/2>)TiO3-0.05SrTiO3(BNT-BKT-ST)+xmol%Mn with the x being 0-1.0%, bismuth nitrate, sodium acetate, potassium acetate, strontium acetate, manganese acetate, titanium isopropylate, acetic acid and glycol ether are adopted, acetylacetone and aqueous ammonia are adopted as raw materials, and a Pt/Ti/SiO2/Si substrate is coated in a spin-coating manner by adoption a sol-gel method so as to prepared sodium bismuth titanate-potassium bismuth titanate-strontium titanate ternary series piezoelectric film with a single perovskite structure. The piezoelectric coefficient d<33> of the film can reach 93 pm/V. By Mn doping, the leak current of the sodium bismuth titanate-potassium bismuth titanate-strontium titanate ternary type piezoelectric film is decreased and resistance to pressure is enhanced. The film reaches performances of traditional lead piezoelectric film and has good application prospect in microactuators and actuators.

The invention discloses a preparation method of a Cu-Mn double-doping ZnS quantum dot solution and application. Firstly, Mn-doped ZnS nanometer crystals are obtained in the nucleation doping process, i.e., Mn precursors and Zn precursors are mixed and are added into S precursors; after the reaction for a period of time, Cu precursors are added; the reaction temperature is controlled, so that the crystals continuously grow; therefore Cu-Mn double-doping ZnS quantum dots are obtained. The prepared double-doping quantum dots simultaneously have Cu and Mn doping fluorescence emission peaks; in addition, the Cu doping fluorescence emission peak is sensitive to the environment and can be used as recognition signals; the Mn doping fluorescence emission peak is used as a reference signal. Therefore the obtained Cu-Mn double-doping ZnS quantum dots can be used as ratio fluorescent probes for analysis and detection. The preparation method disclosed by the invention has the advantages that the preparation method is simple; a green effect is achieved; the repeatability is good; the prepared double-doping ZnS quantum dots have good water solubility; the fluorescence is adjustable.

The invention discloses an electric field regulated selective crystallization synthesized double perovsNaite sodium ion battery negative electrode material and a preparation method thereof. The material is characterized in that the composition of the negative electrode material is NaBa0.3La0.3K0.4Zr0.8Ni0.1Mn0.1MoO6, an electric field having a specific direction is applied during a high-temperature solid phase reaction in the preparation process to change the crystal characteristics of lattice defect crystals and grow cylindrical particles along the direction of the electric field; the non-uniform crystallization on the surfaces of the cylindrical particles maNaes a sintering aid non-uniformly adhered to the position having a large surface curvature radius and partially bonded to form a continuous porous morphology, and the morphology is in favor of reducing the crystal boundary resistance and the electron migration resistance and accelerating the migration ability of sodium ions in an electrolyte and crystal lattices and the oxidation reduction reaction rate; the material also has a certain structure rigidity, so the volume change of the material in the charge and discharge process is buffered; and the high-performance sodium ion battery negative electrode material is formed through the co-occupation of Na and La in an A position, the Ba and K doping in a La position and the Ni and Mn doping in a B position.

The invention discloses a double-perovskite lithium-ion battery anode material synthesized through electric field regulated selective crystallization and a preparation method of the anode material. The anode material is characterized in that the composition of the anode material is Na0.8Ba0.2Y0.9Li0.1Co0.9Zn0.1Nb0.9Mn0.1O6. The crystallization characteristic of crystals with lattice imperfection is changed by use of an applied electric field in the specific direction in a high-temperature solid-phase reaction during preparation, and cylindrical particles are formed through growing in the electric field direction; meanwhile, parts, with high surface curvature radiuses, of cylindrical particles unevenly adhere to a sintering aid to partially be adhered into continuous porous morphology. The morphology is beneficial to reduction of crystal boundary resistance and electron transfer resistance, increases the lithium-ion migration capacity and the redox reaction rate and has certain structure rigidity to form buffer for volume change; the lithium-ion battery anode material with high performance is formed through Na and Y co-occupation in position A, Ba doping in position Na, Li doping in position Y and Zn and Mn doping in position B.

The invention belongs to the technical field of photocatalyst materials, particularly relates to a preparation method of Mn doped lanthanum titanate photocatalyst fluorescent powder and an application. The chemical formula of the photocatalyst fluorescent powder is MnxLa (2-x) TiO5-0.5x, wherein 0.01<=x<=0.4. The preparation method includes the steps: firstly preparing lanthanum titanate gel, doping manganese ions, and synthesizing corresponding powder at the lower temperature by the aid of a self-propagating combustion method; determining that the power has optimal photocatalytic performance when Mn doping amount is 10%, and the power has highest luminescence property when Mn doping amount is 3% according to photocatalytic effect and luminescent intensity. The preparation method is simple in process, easy to operate and low in calcination temperature, conditions are mild and easy to control, prepared samples are high in purity and yield, and the fluorescent powder is a novel rare earth composite material with photocatalysis and fluorescence performances.

The invention relates to methods for InSb nanowire manufacturing and Mn doping both based on a multi-step glancing-angle deposition process. The method for InSb nanowire manufacturing includes the steps of (1), manufacturing monocrystal pure-In nanowires by the multi-step glancing-angle deposition technology; (2), depositing Sb coating on the surface of the pure In nanowires to form an In-Sb core-shell structure; (3), subjecting the In-Sb core-shell structure to annealing treatment to realize crystallization reaction when the In-Sb core-shell structure is in solid phase so as to form the InSb nanowires. The method for Mn doping includes the steps of (1), manufacturing the monocrystal pure-In nanowires by the multi-step glancing-angle deposition technology; (2), depositing Mn coating on the surface of the pure In nanowires to form an In-Mn core-shell structure; (3), depositing Sb coating on the surface of the Mn coating and then performing annealing treatment so as to form the Mn doped InSb nanowires. By the methods, manufacturing of InSb nanowires and Mn doping at a low temperature are achieved, and the InSb nanowires with high content of Mn are obtained.

The present invention relates to a bismuth ferrite doped single-phase multiferroic material with the chemical composition of Bi1.04-xBaxFe0.95Mn0.05O3, wherein x satisfies the relation of 0.15<= x<= 0.25, and the lattice structure is coexistence of trilateral phase and tetragonal phase. By barium doping at site A and Mn doping at site B, and control of doping amount of the barium element, a crystal lattice structure with the coexistence of trilateral phase and tetragonal phase is realized; the structure not only can significantly improve the ferromagnetism and ferroelectricity of the bismuth ferrite bulk, but also is observed with obvious magnetoelectric coupling phenomenon, wherein the magnetoelectric coefficient alpha of mu0delta M / delta E is 1.8*10<-12> s/m, so as to realize electromagnetic control, and provide unlimited possibilities for the multi-functionalization and miniaturization of future electronic components.

The invention discloses a method for preparing a Bi-Mn doping-modified TiO2/diatomite composite material by a sol-gel method with ultrasonic wave assistance and relates to the technical field of sewage treatment. The method comprises the steps: taking anhydrous ethanol as a dispersant, taking butyl titanate as a titanium source, taking glacial acetic acid as an inhibitor, and adding purified high-grade diatomite, so as to obtain a precursor solution; and dropwise adding a pH-adjusted aqueous solution into the precursor solution, and then, carrying out a sol gel reaction, thereby obtaining theTiO2/diatomite composite material. Due to doping of ions of metals, i.e., Bi and Mn, a crystal phase of nano titanium dioxide is not changed, however, the crystallinity is better, and the particle size is reduced. The photocatalysis capability is successfully improved due to the doping of the metal ions. The photocatalysis performance of the composite material codoped with two kinds of ions is better than that doped with single ions, and the modification effect of manganese ions is better than that of bismuth ions.

The invention relates to the technical field of catalysts, and provides a Mn-ZnO catalyst which comprises ZnO and Mn doped in the ZnO. The mass ratio of Mn to ZnO in the Mn-ZnO catalyst is (0.001 to 10): 100. Mn is used as a doping metal, so that the lattice structure in ZnO is effectively changed, the photocatalyst can absorb sunlight to generate electron and hole pairs, electrons and holes are rapidly separated and migrated to the surface of a Mn-ZnO semiconductor, recombination of photon-generated carriers is inhibited, and therefore, the service life of the photo-gnerated electron-hole pair participating in the photocatalytic reaction is prolonged; and the electrons and holes migrated to the surface of the Mn-ZnO semiconductor and CH4 adsorbed on the surface of Mn-ZnO are subjected to a redox reaction, so that the photocatalytic efficiency is improved. Experimental results show that the Mn-ZnO catalyst provided by the invention can efficiently catalyze and degrade methane under simulated sunlight.

The invention discloses a Mn-doped two-dimensional organic-inorganic hybrid perovskite BDACdBr4 single crystal/powder material as well as a preparation method and application thereof. According to the Mn-doped two-dimensional organic-inorganic hybrid perovskite BDACdBr4 single crystal/powder, a 1, 4-butanediamine (BDA) derivative, a cadmium-containing compound and a manganese-containing compound are used as reaction precursors, and hydrobromic acid is used as a reaction solution. And the influence of the Mn doping amount on the luminous efficiency is explored. The Mn-doped two-dimensional organic-inorganic hybrid perovskite BDACdBr4 single crystal/powder material prepared by adopting the preparation method is good in crystallinity, stable in structure, simple and convenient in preparation process, capable of being rapidly and massively synthesized, high in luminous efficiency and capable of realizing 608nm broadband orange light emission under ultraviolet excitation. The material has a good application prospect in the fields of illumination, display, photoelectric detectors or solar cells and the like.