6 results about "Mn doping" patented technology

This invention discloses a highly wear-resistant and corrosion-resistant multi-principal element alloy and its preparation method, belonging to the field of metallic material preparation technology. It includes four main alloying elements (Al, Cr, Fe, and Ni) and a dopant element (Mn). The chemical composition of the multi-principal element alloy satisfies the general formula Al... a Cr b Fe c Ni d Mn e Where a is the atomic percentage of Al, b is the atomic percentage of Cr, c is the atomic percentage of Fe, d is the atomic percentage of Ni, and e is the atomic percentage of Mn, with the sum of the atomic percentages of each element being 100%. This invention regulates the phase, microstructure, and elemental distribution of the alloy through Mn doping, resulting in an alloy that possesses high hardness, excellent corrosion resistance, and corrosion wear resistance, as well as good plastic processing performance. The supporting preparation method is simple, with controllable parameters and readily available raw materials, making it suitable for large-scale industrial production. It can be widely used in key structural components of marine engineering equipment and other equipment operating under harsh corrosion-wear coupling conditions.

The invention belongs to the technical field of thermochromic films, and discloses a TiO2 / Mn-VO2 / SiO2 composite film and a preparation method and application thereof.The TiO2 / Mn-VO2 / SiO2 composite film sequentially comprises a buffer layer, a first functional layer and a second functional layer; wherein the buffer layer is formed by SiO2; the first functional layer is formed by a first material, the first material is obtained by doping VO2 with Mn, and the doping amount of Mn is 0.8 at.%-1.2 at.%; the second functional layer is formed of TiO2. The TiO2 / Mn-VO2 / SiO2 composite film structure is constructed, and by virtue of the synergistic effect of Mn doping, the SiO2 buffer layer and the TiO2 functional layer, the phase change temperature of the thermochromic material is effectively reduced to adapt to daily use scenes, and meanwhile, excellent visible light transmittance and solar irradiation regulation efficiency are comprehensively guaranteed; and the practical functions of interface adhesion, structural stability, self-cleaning and the like of the film are remarkably improved, and comprehensive optimization of core performance and use characteristics is realized.

The invention relates to the technical field of crystal growth in the field of condensed physics and material science, in particular to a method for growing a Kagome metal AV3Sb5 single crystal. According to the method, a direct self-service solvent method is combined with a specific temperature control program, so that the effective growth of the Kagome metal single crystal is realized, and an important material basis is provided for deeply researching a quantum phenomenon in a Kagome crystal lattice; meanwhile, the possibility is provided for preparing low-energy-consumption electronic components, superconducting diodes, nano optical and photonics devices and other applications; according to the method, the quality and size of the single crystal are improved, the growth process is simplified, the repeatability and stability are enhanced, flexible regulation and control of Mn doping are realized, the application field is widened, and compared with the prior art, the method has remarkable advantages and beneficial effects.

This invention discloses a metallically modulated Mn-doped spinel-type ZnCo₂O₄ anode material and its preparation method, belonging to the field of lithium-ion battery electrode materials. The material maintains a pure-phase spinel crystal structure, exhibiting uniform and regular 2–5 μm polyhedral micron-sized particles with layered wrinkles and stepped porous structures on the surface. Mn and Co exist in mixed valence states of Mn²⁺ / Mn³⁺ and Co²⁺ / Co³⁺. First-principles DFT calculations confirm that Mn doping transforms the material from a semiconductor to a metallic conductor, eliminating the band gap, significantly increasing the Fermi level electronic state density, and reducing the lithium-ion diffusion barrier from 1.05 eV to 0.75 eV. Its preparation employs a hydrothermal method combined with a calcination process. This material exhibits high reversible specific capacity at a current density of 0.1 A·g⁻¹, excellent capacity retention after 200 cycles, outstanding rate performance in the range of 0.1~1.0 A·g⁻¹, significantly reduced charge transfer resistance, and overall electrochemical performance far superior to pure-phase ZnCo₂O₄. It can be directly used as a negative electrode for lithium-ion batteries and has good application prospects in the field of lithium-ion batteries.

The invention belongs to the field of two-dimensional materials, and particularly relates to a magnetic regulation and control technology of transition metal sulfide molybdenum disulfide (MoS2), transition metal manganese (Mn) is taken as an example, the influence of Mn doping on the magnetic performance of a MoS2 film is systematically researched, and the magnetic performance of the MoS2 film can be regulated and enhanced. The quantitative relation between the Mn doping concentration x and the magnetic performance of the Mo1-xMnxS2 film is established through experiments for the first time, it is successfully shown that the magnetic performance of the MoS2 film can be effectively enhanced through Mn doping, the saturation magnetization is 0.0096 emu / mm < 3 > when the saturation magnetization is x-9.7% and is about 3 times that of a sample doped with a small amount of Mn, and the coercive force is about 160 Oe; the magnetic enhanced dual mechanisms of the MoS2 film, namely the local magnetic moment introduced by Mn atoms and enhanced magnetic exchange interaction, are illuminated for the first time. Research on the magnetic performance of the Mo1-xMnxS2 film regulated and controlled by doping of Mn provides reference for expanding the application of the two-dimensional material in spintronics and magnetic storage devices.

The invention discloses a room-temperature nitrogen dioxide sensor based on a Mn-TiO2 / TiO2 homojunction thin film material and a preparation method of the room-temperature nitrogen dioxide sensor, and relates to the technical field of nitrogen dioxide gas detection. The preparation method comprises the following steps: S1, growing and preparing a Mn-TiO2 / TiO2 homojunction film gas sensitive material on an FTO (Fluorine-doped Tin Oxide) substrate through a two-step hydrothermal method; s2, sputtering a Pt electrode on the surface of the Mn-TiO2 / TiO2 homojunction film through magnetron sputtering to obtain a resistance type nitrogen dioxide sensor; the invention provides a room-temperature nitrogen dioxide sensor. The sensitivity and selectivity of TiO2 to nitrogen dioxide at room temperature are improved through Mn doping and homojunction construction; the advantages of p-type doping, construction of a homogeneous p-n junction and Pt electrode modification are combined, the response and working consistency of the TiO2 material at room temperature is greatly improved, and the method has important practical application value for further promoting the development of semiconductor gas sensitive devices.