Mn-doped sodium bismuth titanate-potassium bismuth titanate-strontium titanate ternary series piezoelectric film material and preparation method thereof

A bismuth potassium titanate and piezoelectric thin film technology is applied in the field of bismuth titanate sodium-bismuth potassium titanate-strontium titanate ternary piezoelectric thin film material and its preparation to reduce leakage current, increase polarization voltage, Effect of performance improvement

Inactive Publication Date: 2014-07-23
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the preparation and performance research of the BNT-BKT-ST ternary lead-free piezoelectric film has not been reported yet.

Method used

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  • Mn-doped sodium bismuth titanate-potassium bismuth titanate-strontium titanate ternary series piezoelectric film material and preparation method thereof
  • Mn-doped sodium bismuth titanate-potassium bismuth titanate-strontium titanate ternary series piezoelectric film material and preparation method thereof
  • Mn-doped sodium bismuth titanate-potassium bismuth titanate-strontium titanate ternary series piezoelectric film material and preparation method thereof

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preparation example Construction

[0030] (2) Preparation of thin film: the precursor solution C prepared in step (1) was coated on Pt / Ti / SiO by spin coating 2 / Si substrate:

[0031] a) Pt / Ti / SiO 2 / Si substrate is pretreated at 300-500°C for 10-20 minutes.

[0032] b) Spin-coat precursor solution C on the substrate obtained after step a) at a rotation speed of 3000 rpm for 20 seconds.

[0033] c) Treat the film obtained after step b) in a tube furnace in sequence at 100-200°C for 2-3 minutes, and at 300-400°C for 5-10 minutes, repeat this step to obtain a film of required thickness, and finally Annealing at ~800° C. for 20 to 40 minutes to prepare Mn-doped bismuth titanate sodium-bismuth potassium titanate-strontium titanate ternary piezoelectric film material.

Embodiment 1

[0036] Preparation of bismuth titanate sodium-bismuth potassium titanate-strontium titanate thin film Mn doping amount is 0.

[0037] a, according to the general chemical formula (0.8Bi 1 / 2 Na 1 / 2 TiO 3 -0.2Bi 1 / 2 K 1 / 2 )TiO 3 Weigh raw materials, dissolve bismuth nitrate, sodium acetate, potassium acetate, in acetic acid, stir and heat to boiling for 15-30 minutes to prepare solution ①; use acetylacetone as complexing agent to dissolve titanium isopropoxide in ethyl alcohol Glycol ether was stirred at 50-70°C for 60 minutes to prepare solution ②; finally, solution ② was poured into solution ①, and the concentration of the solution was controlled at 0.3M, and stirred at 50-70°C for 120 minutes to prepare precursor solution A.

[0038] b. According to the general chemical formula SrTiO 3 The stoichiometric ratio of the raw material strontium acetate was weighed and stirred and heated to boiling for 15-30 minutes to obtain a solution ③, titanium isopropoxide was dissolved ...

Embodiment 2

[0045] The bismuth titanate sodium-bismuth potassium titanate-strontium titanate thin film was prepared with a Mn doping amount of 0.2%.

[0046] a, according to the general chemical formula (0.8Bi 1 / 2 Na 1 / 2 TiO 3 -0.2Bi 1 / 2 K 1 / 2 )T1O 3 The stoichiometric ratio of +0.2mol% Mn weighs the raw materials, dissolves bismuth nitrate, sodium acetate, potassium acetate, manganese acetate, in acetic acid, stirs and heats to boiling for 15-30 minutes to prepare the solution ①; use acetylacetone as complexing agent Dissolve titanium isopropoxide in ethylene glycol ether and stir at 50-70°C for 60 minutes to prepare solution ②; finally, pour solution ② into solution ①, control the concentration of the solution at 0.3M, and stir at 50-70°C for 120 minutes Prepare precursor solution A.

[0047] b. According to the general chemical formula SrTiO 3 The stoichiometric ratio of the raw material strontium acetate was weighed and stirred and heated to boiling for 15-30 minutes to obtain ...

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Abstract

The invention relates to a Mn-doped sodium bismuth titanate-potassium bismuth titanate-strontium titanate ternary series piezoelectric film material and a preparation method thereof. According to 0.95(0.8Bi<1 / 2>Na<1 / 2>TiO3-0.2Bi<1 / 2>K<1 / 2>)TiO3-0.05SrTiO3(BNT-BKT-ST)+xmol%Mn with the x being 0-1.0%, bismuth nitrate, sodium acetate, potassium acetate, strontium acetate, manganese acetate, titanium isopropylate, acetic acid and glycol ether are adopted, acetylacetone and aqueous ammonia are adopted as raw materials, and a Pt / Ti / SiO2 / Si substrate is coated in a spin-coating manner by adoption a sol-gel method so as to prepared sodium bismuth titanate-potassium bismuth titanate-strontium titanate ternary series piezoelectric film with a single perovskite structure. The piezoelectric coefficient d<33> of the film can reach 93 pm / V. By Mn doping, the leak current of the sodium bismuth titanate-potassium bismuth titanate-strontium titanate ternary type piezoelectric film is decreased and resistance to pressure is enhanced. The film reaches performances of traditional lead piezoelectric film and has good application prospect in microactuators and actuators.

Description

technical field [0001] The invention belongs to the field of electronic materials, in particular to a Mn-doped bismuth titanate sodium-bismuth potassium titanate-strontium titanate ternary piezoelectric film material and a preparation method thereof. Background technique [0002] Piezoelectric ferroelectric materials are widely used in information detection, conversion, processing, display and storage, etc., and are important high-tech functional materials, but currently the dominant piezoelectric material is still lead with a lead content of up to 70%. The base piezoelectric material is lead zirconate titanate (PZT). Lead-based materials cause serious harm to the ecological environment and human health in the process of preparation, use and disposal. Therefore, the development of lead-free piezoelectric ferroelectric materials is one of the urgent tasks related to the sustainable development of electronic technology in my country. In the 1990s, with the development of micr...

Claims

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Application Information

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IPC IPC(8): C04B35/475C04B35/622
Inventor 翟继卫李伟边延龙
Owner TONGJI UNIV
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